CN109755364A - A kind of novel iii-nitride light emitting devices - Google Patents
A kind of novel iii-nitride light emitting devices Download PDFInfo
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- CN109755364A CN109755364A CN201910032651.1A CN201910032651A CN109755364A CN 109755364 A CN109755364 A CN 109755364A CN 201910032651 A CN201910032651 A CN 201910032651A CN 109755364 A CN109755364 A CN 109755364A
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Abstract
The invention discloses a kind of novel iii-nitride light emitting devices, including substrate, and the buffer layer, undoped nitride layer, N-shaped nitride layer, active layer, electronic barrier layer and the p-type nitride layer that are sequentially located on substrate；Wherein: the p-type nitride layer includes the hole injection layer being sequentially located on electronic barrier layer, hole diffusion layer and P type contact layer, and the electronic barrier layer is the AlN of 1 ~ 10 nm of thickness.The present invention has the advantages that using band gap width big (6.2eV) and the aluminium nitride electronic barrier layer of thickness thin (1 ~ 10 nm), electronics can be effectively prevent from active layer to p-type nitride layer overflow, the thickness of aluminium nitride electronic barrier layer is thin, can avoid that hole is hindered to migrate from p-type nitride layer to active layer；The p-type Al of 10 ~ 50 nm thickness is inserted between hole injection layer and P type contact layer simultaneouslyxInyGa1‑x‑yFor N as hole diffusion layer, band gap width is greater than the band gap width of P type contact layer and hole injection layer, and hole in p-type nitride layer can be improved laterally expands ability.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of novel iii-nitride light emitting devices.
Background technique
Light emitting diode (Light emitting diodes, LED) is a kind of electroluminescent device, has energy conservation, ring
Guarantor, the advantages that safety, the service life is long, low in energy consumption, brightness is high, waterproof, miniature, light beam are concentrated, easy maintenance, are widely used in friendship
The fields such as ventilating signal lamp, street lamp and large-area displays.The especially fast development of iii-nitride light emitting devices in recent years, make with
White-light illuminating based on blue light-emitting diode more becomes current research hotspot.
The basic epitaxial structure of traditional light emitting diode include buffer layer, undoped nitride layer, N-shaped nitride layer,
Active layer and p-type nitride layer.By loading forward voltage, the electronics and p that N-shaped nitride layer provides at light emitting diode both ends
The hole that type nitride layer provides compound generation photon in active layer, to convert electrical energy into luminous energy.In nitridation now
In object light emitting diode, fast 10 times of mobility or more of the mobility ratio hole of electronics, when diode is in running order, electricity
Son is easy to quickly pass over active layer from N-shaped nitride layer, and overflows to p-type nitride layer, loses and hole is active
Compound chance in layer.Currently, the epitaxial structure of most iii-nitride light emitting devices take active layer and p-type nitride layer it
Between be arranged aluminium gallium nitride alloy electronic barrier layer (the generally AlGaN of 10 ~ 50 nm of thickness, wherein the component of Al is 0.2 ~ 0.6), with
The problem of reducing electronics overflow.In order to improve aluminium gallium nitride alloy electronic barrier layer to the blocking capability of electronics, need to improve aluminium nitride
The thickness of the content of aluminium component or increase aluminium gallium nitride alloy electronic barrier layer in gallium electronic barrier layer, aluminium component is higher or thickness is thicker
Aluminium gallium nitride alloy electronic barrier layer in addition to can be reduced the problem of electronics overflows to p-type nitride layer in active layer, moreover it is possible to increase p-type
Hole laterally expands ability in nitride layer, to improve the uniformity that hole is injected into active layer, helps to improve hair
The luminous efficiency of optical diode.However the aluminium component of aluminium gallium nitride alloy electronic barrier layer is excessively high or thickness is blocked up, will lead to storeroom
Polarity effect and stress increase, to generate an excessively high valence band barrier, hinder hole from p-type nitride layer to active
Layer migration reduces the efficiency that hole is injected into active layer, declines the luminous efficiency of iii-nitride light emitting devices, Shortcomings.
Summary of the invention
(1) the technical issues of solving
In view of the deficiencies of the prior art, it the present invention provides a kind of novel iii-nitride light emitting devices, solves in the prior art,
Since the aluminium component of aluminium gallium nitride alloy electronic barrier layer is excessively high or thickness is blocked up, the efficiency that caused hole is injected into active layer is inclined
It is low, and the problem of cause light-emitting diode luminous efficiency to decline.
(2) technical solution
In order to achieve the object, the invention provides the following technical scheme: a kind of novel iii-nitride light emitting devices, including substrate,
And it is sequentially located at buffer layer, undoped nitride layer, N-shaped nitride layer, active layer, electronic barrier layer and p-type on substrate
Nitride layer；Wherein: the p-type nitride layer includes the hole injection layer being sequentially located on electronic barrier layer, hole diffusion layer
And P type contact layer, the electronic barrier layer are the AlN of 1 ~ 10 nm of thickness, the hole diffusion layer is the p of 10 ~ 50 nm of thickness
Type AlxInyGa1-x-yN, wherein 0.05≤x≤0.5,0≤y≤0.03.
Wherein: the doping concentration that the hole injection layer is the p-type GaN, Mg of 10 ~ 50 nm of thickness is 5E19 ~ 5E20cm-3。
Wherein: the doping concentration of Mg is 3E18 ~ 3E19cm in the hole diffusion layer-3。
Wherein: the doping concentration that the P type contact layer is the p-type GaN, Mg of 6 ~ 60 nm of thickness is 5E19 ~ 2E21cm-3。
Wherein: the doping concentration of Mg is fixed value or is to increase along epitaxial growth direction in the P type contact layer.
Wherein: the band gap width of the hole diffusion layer is greater than the band gap width of hole injection layer and P type contact layer.
Wherein: the buffer layer is the AlN or GaN of 5 ~ 100nm of thickness.
Wherein: the GaN that the undoped nitride layer is 1 ~ 5 μm of thickness.
Wherein: the doping concentration of N-shaped GaN, Si that the N-shaped nitride layer is 1 ~ 5 μm of thickness are 5E18 ~ 1E20 cm-3。
Wherein: the active layer is several InaGa1-aN(0.04 < a < 0.4) potential well layer and AlbIncGa1-b-cN(0≤b≤
1,0≤c≤0.2,0≤b+c≤1) barrier layer is alternately stacked the multi-quantum pit structure to be formed, InaGa1-aN(0.04 < a < 0.4) gesture
Well layer with a thickness of 1 ~ 5nm, AlbIncGa1-b-cN(0≤b≤1,0≤c≤0.2,0≤b+c≤1) barrier layer with a thickness of 5 ~
20nm, the periodicity of active layer are n, 2 < n < 20.
Wherein: the substrate is sapphire (Al2O3) substrate, silicon (Si) substrate, silicon carbide (SiC) substrate, aluminium nitride
(AlN) substrate, gallium nitride (GaN) substrate, gallium oxide (Ga2O3) one of substrate or zinc oxide (ZnO) substrate.
(3) beneficial effect
Compared with prior art, the present invention provides a kind of novel iii-nitride light emitting devices, have it is following the utility model has the advantages that
1, the present invention replaces tradition using band gap width big (6.2eV) and the aluminium nitride electronic barrier layer of thickness thin (1 ~ 10 nm)
Aluminium gallium nitride alloy electronic barrier layer, the band gap width of aluminium nitride electronic barrier layer is big, and electronics can be effectively prevent from active layer to p-type
The thickness of nitride layer overflow, aluminium nitride electronic barrier layer is thin, can avoid that hole is hindered to move from p-type nitride layer to active layer
It moves；
2, the present invention is inserted into the p-type Al of 10 ~ 50 nm thickness between hole injection layer and P type contact layer simultaneouslyxInyGa1-x-yN
(0.05≤x≤0.5,0≤y≤0.03) is used as hole diffusion layer, and band gap width is greater than P type contact layer and hole injection layer
Band gap width, hole in p-type nitride layer can be improved laterally expands ability, so that the uniformity of hole injection is improved, with
Improve the luminous efficiency of light emitting diode.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention
Appended drawing reference:
Substrate 10, buffer layer 20, undoped nitride layer 30, N-shaped nitride layer 40, active layer 50, electronic barrier layer 60, p-type
Nitride layer 70, hole injection layer 71, hole diffusion layer 72, P type contact layer 73.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment, as shown in Figure 1, a kind of novel nitride Light-Emitting Diode, including substrate 10, and be sequentially located at substrate
Buffer layer 20, undoped nitride layer 30, N-shaped nitride layer 40, active layer 50, electronic barrier layer 60 and p-type nitridation on 10
Nitride layer 70, in which: p-type nitride layer 70 includes hole injection layer 71, hole diffusion layer 72 and P type contact layer 73, the electronics
Barrier layer 60 is the AlN of 1 ~ 10 nm of thickness, and the hole diffusion layer 72 is the p-type Al of 10 ~ 50 nm of thicknessxInyGa1-x-yN,
In 0.05≤x≤0.5,0≤y≤0.03, the band gap width of the hole diffusion layer 72 is greater than hole injection layer 71 and p-type contact
The band gap width of layer 73.
Specifically, the substrate 10 is sapphire (Al2O3) substrate, silicon (Si) substrate, silicon carbide (SiC) substrate, aluminium nitride
(AlN) substrate, gallium nitride (GaN) substrate, gallium oxide (Ga2O3) one of substrate or zinc oxide (ZnO) substrate.The present embodiment
It is preferred that Sapphire Substrate.
Specifically, the buffer layer 20 is AlN, with a thickness of 25nm.
Specifically, the undoped nitride layer 30 is GaN, with a thickness of 2.5 μm.
Specifically, the N-shaped nitride layer 40 is the N-shaped GaN of Si doping, with a thickness of 2.5 μm, wherein N-shaped nitride layer
The doping concentration of middle Si is 5E19 cm-3。
Specifically, the active layer 50 is several InaGa1-aN(0.04 < a < 0.4) potential well layer and AlbIncGa1-b-cN(0
≤ b≤1,0≤c≤0.2,0≤b+c≤1) barrier layer is alternately stacked the multi-quantum pit structure to be formed, Multiple-quantum in the present embodiment
The periodicity of trap is 15, potential well layer In0.14Ga0.86N, with a thickness of 2.5 nm, barrier layer GaN, with a thickness of 100 nm.
Specifically, the electronic barrier layer 60 is AlN, with a thickness of 1 ~ 10 nm, if the thickness of AlN electronic barrier layer 60 is too
Thin (< 1nm), then stopping electronics, the effect is relatively poor, can cause the serious overflow of electronics, reduces electricity in Light-Emitting Diode active layer
The concentration of son；If the thickness of AlN electronic barrier layer 60 is blocked up (> 10 nm), the injection efficiency in hole will affect, reduce and shine
The concentration in hole in diode active layer causes the luminous efficiency of light emitting diode to reduce.The present embodiment AlN electronic barrier layer 60
With a thickness of 2 nm.
In the present embodiment, the p-type nitride layer 70 includes hole injection layer 71, hole diffusion layer 72 and P type contact layer
73。
Wherein, it is 1E20 cm that the hole injection layer 71, which is the doping concentration of the p-type GaN, Mg of Mg doping,-3, with a thickness of 25
nm.The hole diffusion layer 72 is the p-type Al of Mg dopingxInyGa1-x-yN(0.05≤x≤0.5,0≤y≤0.03), with a thickness of
10~50 nm.If the thickness of hole diffusion layer 72 too thin (< 10 nm) or Al constituent content are too low (< 0.05), p-type nitrogen will cause
Hole laterally expands that ability is too poor in compound layer 70, causes hole to be mainly distributed near the position of p-type electrode, causes
Light-emitting diode luminous efficiency is relatively low；If the thickness of hole diffusion layer 72 too thick (> 50 nm) or Al constituent content it is excessively high (>
0.5) resistance value that, will cause p-type nitride layer 70 is higher, and light emitting diode is caused electrically to deteriorate.The present embodiment hole diffusion layer
It is 5E18 cm that Al group, which is divided into 0.15, In group and is divided into 0, Mg doping concentration, in 72-3, with a thickness of 30 nm；
The P type contact layer 73 is that the doping concentration of the p-type GaN, Mg of Mg doping increase along epitaxial growth direction, is from 5E19
cm-3To 5E20 cm-3, with a thickness of 35 nm.
The present invention is replaced and is passed using band gap width big (6.2eV) and the aluminium nitride electronic barrier layer of thickness thin (1 ~ 10 nm)
The aluminium gallium nitride alloy electronic barrier layer of system, the band gap width of aluminium nitride electronic barrier layer is big, and electronics can be effectively prevent from active layer to p
Type nitride layer overflow, the thickness of aluminium nitride electronic barrier layer is thin, can avoid that hole is hindered to move from p-type nitride layer to active layer
It moves；The present invention is inserted into the p-type Al of 10 ~ 50 nm thickness between hole injection layer and P type contact layer simultaneouslyxInyGa1-x-yN(0.05
≤ x≤0.5,0≤y≤0.03) it is used as hole diffusion layer, band gap width is greater than the band gap of P type contact layer and hole injection layer
Width, hole in p-type nitride layer can be improved laterally expands ability, so that the uniformity of hole injection is improved, to improve
The luminous efficiency of light emitting diode.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of novel iii-nitride light emitting devices, including substrate, and be sequentially located on substrate buffer layer, undoped nitridation
Nitride layer, N-shaped nitride layer, active layer, electronic barrier layer and p-type nitride layer, it is characterised in that: the p-type nitride layer packet
The hole injection layer being sequentially located on electronic barrier layer, hole diffusion layer and P type contact layer are included, the electronic barrier layer is thickness
The AlN of 1 ~ 10 nm, the hole diffusion layer are the p-type Al of 10 ~ 50 nm of thicknessxInyGa1-x-yN, wherein 0.05≤x≤0.5,0
≤y≤0.03。
2. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the hole injection layer is
The doping concentration of the p-type GaN, Mg of 10 ~ 50 nm of thickness are 5E19 ~ 5E20cm-3。
3. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: in the hole diffusion layer
The doping concentration of Mg is 3E18 ~ 3E19cm-3。
4. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the P type contact layer is
The doping concentration of the p-type GaN, Mg of 6 ~ 60 nm of thickness are 5E19 ~ 2E21cm-3。
5. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the hole diffusion layer
Band gap width is greater than the band gap width of hole injection layer and P type contact layer.
6. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the buffer layer is thickness
The AlN or GaN of 5 ~ 100nm.
7. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the undoped nitride
The GaN that layer is 1 ~ 5 μm of thickness.
8. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the N-shaped nitride layer
Doping concentration for 1 ~ 5 μm of thickness of N-shaped GaN, Si is 5E18 ~ 1E20 cm-3。
9. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the active layer is several
A InaGa1-aN(0.04 < a < 0.4) potential well layer and AlbIncGa1-b-cN(0≤b≤1,0≤c≤0.2,0≤b+c≤1) barrier layer
It is alternately stacked the multi-quantum pit structure to be formed, InaGa1-aN(0.04 < a < 0.4) potential well layer with a thickness of 1 ~ 5nm, AlbIncGa1-b- cN(0≤b≤1,0≤c≤0.2,0≤b+c≤1) barrier layer with a thickness of 5 ~ 20nm, the periodicity of active layer is n, 2 < n < 20.
10. a kind of novel iii-nitride light emitting devices according to claim 1, it is characterised in that: the substrate is blue precious
Stone (Al2O3) substrate, silicon (Si) substrate, silicon carbide (SiC) substrate, aluminium nitride (AlN) substrate, gallium nitride (GaN) substrate, oxidation
Gallium (Ga2O3) one of substrate or zinc oxide (ZnO) substrate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113224215A (en) * | 2021-05-06 | 2021-08-06 | 厦门乾照光电股份有限公司 | LED epitaxial structure and preparation method thereof |
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