CN111326618A - Semiconductor light emitting device capable of adjusting electron transfer rate - Google Patents

Semiconductor light emitting device capable of adjusting electron transfer rate Download PDF

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Publication number
CN111326618A
CN111326618A CN201811527469.5A CN201811527469A CN111326618A CN 111326618 A CN111326618 A CN 111326618A CN 201811527469 A CN201811527469 A CN 201811527469A CN 111326618 A CN111326618 A CN 111326618A
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layer
type
type doped
light
quantum well
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CN201811527469.5A
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Chinese (zh)
Inventor
李建华
李全杰
刘向英
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
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Priority to CN201811527469.5A priority Critical patent/CN111326618A/en
Publication of CN111326618A publication Critical patent/CN111326618A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to a semiconductor light-emitting device capable of adjusting an electron transfer rate, which comprises a substrate layer; the buffer layer is positioned on the substrate layer; the N-type semiconductor layer is positioned on the buffer layer; the N-type doping layer stacking layer is positioned on the N-type doping layer and comprises a plurality of first N-type doping layers and a plurality of second N-type doping layers, and the first N-type doping layers and the second N-type doping layers are sequentially stacked on the N-type doping layer; the quantum well light-emitting layer is positioned on the N-type doped layer lamination; the electron barrier layer is positioned on the quantum well light-emitting layer; the P-type doping layer is positioned on the electron blocking layer; and the P-type semiconductor layer is positioned on the P-type doped layer. The light-emitting diode provided by the invention is provided with the N-type doped layer lamination, the migration rate of electrons can be reduced, and the probability of radiation recombination of holes and electrons in the quantum well luminescent layer can be improved by adjusting the rate of electron migration to the quantum well luminescent layer, so that the luminous efficiency of the light-emitting diode is improved.

Description

Semiconductor light emitting device capable of adjusting electron transfer rate
Technical Field
The present invention relates to the field of light emitting devices, and more particularly, to a semiconductor light emitting device capable of adjusting an electron mobility.
Background
A Light-Emitting Diode (LED) is a semiconductor Light-Emitting device capable of Emitting Light. The LED lamp is popular because of the advantages of small volume, low energy consumption, long service life, low driving voltage and the like, and is widely used for indicator lamps, display screens and the like. The pursuit of high brightness and high performance has become a trend, and the improvement of the light emitting efficiency of LED chips is urgent to meet the increasing demand. The replacement of traditional lighting by LED lighting has become a significant trend, and LED lighting will advance to high-speed growth.
At present, the light emitting diode generally comprises a substrate layer, a buffer layer, an N-type semiconductor layer, a multi-quantum well light emitting layer and a P-type semiconductor layer. Wherein the N-type semiconductor layer is used for providing electrons; the P-type semiconductor layer is used for providing holes, and when current flows, electrons provided by the N-type semiconductor layer and the holes provided by the P-type semiconductor layer enter the multi-quantum well light-emitting layer to be recombined and emit light.
However, at present, the mobility of electrons is much higher than that of holes, so that the number of electrons injected into the multiple quantum well light-emitting layer is too large, and the electrons are easy to transition from the multiple quantum well light-emitting layer to the P-type semiconductor layer to be non-radiatively recombined with the holes, thereby affecting the light-emitting efficiency of the light-emitting diode.
Disclosure of Invention
Accordingly, the present invention is directed to a semiconductor light emitting device capable of adjusting an electron mobility rate to overcome the technical shortcomings and drawbacks of the related art.
Specifically, an embodiment of the present invention provides a semiconductor light emitting device capable of adjusting an electron mobility rate, including:
a substrate layer;
a buffer layer on the substrate layer;
an N-type semiconductor layer on the buffer layer;
the N-type doping layer stacking layer is positioned on the N-type doping layer and comprises a plurality of first N-type doping layers and a plurality of second N-type doping layers, wherein the first N-type doping layers and the second N-type doping layers are sequentially stacked on the N-type doping layers, and the doping concentration of the first N-type doping layers is greater than that of the second N-type doping layers;
the quantum well light-emitting layer is positioned on the N-type doped layer lamination;
the electron blocking layer is positioned on the quantum well light-emitting layer;
the P-type doping layer is positioned on the electron blocking layer;
and the P-type semiconductor layer is positioned on the P-type doped layer.
In one embodiment of the present invention, the first N-type doped layer is an N-type InGaN layer.
In one embodiment of the present invention, the doping element of the first N-type doped layer is Si, and the doping concentration of the first N-type doped layer is 1018cm-3-5×1018cm-3。
In one embodiment of the present invention, the second N-doped layer is an N-type AlGaN layer.
In one embodiment of the present invention, the doping element of the second N-type doped layer is Si, and the doping concentration of the second N-type doped layer is 1017cm-3-5×1017cm-3。
In an embodiment of the present invention, the doping concentration of each of the first N-type doping layer and the second N-type doping layer is lower than that of the N-type semiconductor layer.
The embodiment of the invention has the following advantages:
the light-emitting diode provided by the invention is provided with the N-type doped layer lamination, the migration rate of electrons can be reduced, and the probability of radiation recombination of holes and electrons in the quantum well luminescent layer can be improved by adjusting the rate of electron migration to the quantum well luminescent layer, so that the luminous efficiency of the light-emitting diode is improved.
Other aspects and features of the present invention will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. It is to be understood, however, that the drawings are designed solely for purposes of illustration and not as a definition of the limits of the invention, for which reference should be made to the appended claims. It should be further understood that the drawings are not necessarily drawn to scale and that, unless otherwise indicated, they are merely intended to conceptually illustrate the structures and procedures described herein.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a semiconductor light emitting device capable of adjusting an electron mobility according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a semiconductor light emitting device capable of adjusting an electron mobility according to an embodiment of the present invention. An embodiment of the present invention provides a semiconductor light emitting device capable of adjusting an electron transfer rate, the semiconductor light emitting device including:
a substrate layer 11;
specifically, the material of the substrate layer 11 may be sapphire, silicon carbide, zinc oxide, gallium nitride, aluminum nitride, or other material suitable for crystal epitaxial growth.
A buffer layer 12 on the substrate layer 11;
further, the material of the buffer layer 12 is GaN.
According to the embodiment of the invention, the buffer layer 12 is grown on the substrate layer, so that defects entering the N-type semiconductor layer, the quantum well light-emitting layer and the P-type semiconductor layer can be reduced, and the light-emitting quality of the light-emitting diode is improved.
An N-type semiconductor layer 13 on the buffer layer 13;
further, the N-type semiconductor layer 13 is an N-GaN layer, and the doping element of the N-type semiconductor layer 13 is Si, the doping concentration of the N-type semiconductor layer 13 may be 1019-3 × 1019 cm-3.
Further, the N-type semiconductor layer 13 has a mesa, and the first electrode 21 is formed on the mesa of the N-type semiconductor layer 13.
The N-type doped layer stacking layer 14 is positioned on the N-type semiconductor layer 13, the N-type doped layer stacking layer 14 comprises a plurality of first N-type doped layers 141 and a plurality of second N-type doped layers 142, the plurality of first N-type doped layers 141 and the plurality of second N-type doped layers 142 are sequentially stacked on the N-type semiconductor layer 13, and the doping concentration of the first N-type doped layers 141 is greater than that of the second N-type doped layers 142;
further, the first N-type doped layer 141 is an N-type InGaN layer.
Further, the doping element of the first N-type doping layer 141 is Si, and the doping concentration of the first N-type doping layer 141 is 1018cm-3-5×1018cm-3。
Further, the second N-type doped layer 142 is an N-type AlGaN layer.
Further, the doping element of the second N-type doped layer 142 is Si, and the doping concentration of the second N-type doped layer 142 is 1017cm-3-5×1017cm-3。
Further, the doping concentration of each of the first N-type doping layer 141 and the second N-type doping layer 142 is lower than that of the N-type semiconductor layer 13.
According to the embodiment of the invention, the first N-type doping layer 131 and the second N-type doping layer 132 which are sequentially stacked are grown on the N-type semiconductor layer 13, and the concentration of the first N-type doping layer 131 is greater than that of the second N-type doping layer 132, so that the migration rate of electrons can be reduced, and the hole concentration and the electron concentration in the quantum well light-emitting layer are equivalent by reducing the rate of electron migration to the quantum well light-emitting layer, so that the light-emitting efficiency of the light-emitting diode is improved. In addition, the first N-type doped layer 141 is an N-type InGaN layer and the second N-type doped layer 142 is an N-type AlGaN layer, which can reduce dislocation and cracks of long lattices and prevent extension of defects.
In the embodiment, the doping concentrations of the first N-type doping layer 141 and the second N-type doping layer 142 are lower than the doping concentration of the N-type semiconductor layer 13, so that the voltage of the LED device can be effectively reduced, the antistatic property of the LED device can be improved, and the light emitting efficiency of the LED device can be improved.
A quantum well light-emitting layer 15 on the N-type doped layer stack 14;
further, the quantum well light emitting layer 15 is an indium-doped gallium nitride layer.
An electron blocking layer 16 on the quantum well light emitting layer 15;
further, the material of the electron blocking layer 16 is Alx1InyGa1-x1-yN, wherein, 0<x1≤0.4，0<y≤0.2。
Further, the thickness of the electron blocking layer 16 is 100-200 nm.
In the embodiment of the invention, the electron barrier layer is arranged between the P-type doping layer 17 and the quantum well light-emitting layer 15, and the material of the electron barrier layer 16 is Alx1InyGa1-x1-yN, since the barrier of aluminum is high, the electron blocking layer 16 can effectively prevent electrons generated by the N-type semiconductor layer 13 from entering the P-type semiconductor layer 18, thereby preventing non-radiative recombination of electrons and holes in the P-type semiconductor layer 18, preventing the reduction of hole concentration due to electron transition, and improving the light emitting efficiency of the light emitting diode.
The P-type doping layer 17 is positioned on the electron blocking layer 16;
further, the P-type doped layer 17 is an AlGaN layer, and the doping element of the P-type doped layer 17 is Mg;
further, the doping concentration of the P-type doping layer 17 is higher than that of the P-type semiconductor layer 18, and the doping concentration of the P-type semiconductor layer 18 is 1/5-1/3 of the doping concentration of the P-type doping layer 17;
and a P-type semiconductor layer 18 on the P-type doped layer 17.
Further, the P-type semiconductor layer 18 is a P-GaN layer, the doping element of the P-type semiconductor layer 18 is Mg, and the doping concentration of the P-type semiconductor layer 18 is 1019～1020cm-3。
Because the mobility of electrons is far higher than that of holes, electrons generated by the N-type semiconductor layer 13 can rapidly enter the quantum well light-emitting layer 15, and the capability of injecting the holes generated by the P-type semiconductor layer 18 into the quantum well light-emitting layer 15 can be improved by adding the P-type doping layer 17 and setting the doping concentration of the P-type doping layer 17 to be higher than that of the P-type semiconductor layer 18, so that the influence on the light-emitting efficiency and the light-emitting quality due to excessive electrons of the quantum well light-emitting layer 15 is avoided.
A transparent conductive layer 19 is further grown on the P-type semiconductor layer 18, and a second electrode is further grown on the transparent conductive layer 19. A first electrode 21 is formed on the exposed platform of the N-type semiconductor layer 13, a second electrode 20 is formed on the P-type semiconductor layer 18, the first electrode 21 and the second electrode 20 may be made of titanium, aluminum, titanium or gold, and when current is injected into the quantum well light-emitting layer 15 through the first electrode 21 and the second electrode 20, electrons from the N-type semiconductor layer 13 and holes from the P-type semiconductor layer 18 are combined in the quantum well light-emitting layer 15, so that the quantum well light-emitting layer 15 generates light.
The light-emitting diode provided by the invention is provided with the N-type doped layer lamination, the migration rate of electrons can be reduced, and the probability of radiation recombination of holes and electrons in the quantum well luminescent layer can be improved by adjusting the rate of electron migration to the quantum well luminescent layer, so that the luminous efficiency of the light-emitting diode is improved.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (6)

1. A semiconductor light emitting device capable of adjusting an electron mobility rate, comprising:
a substrate layer (11);
a buffer layer (12) on the substrate layer (11);
an N-type semiconductor layer (13) on the buffer layer (12);
the N-type doped layer laminated layer (14) is located on the N-type semiconductor layer (13), the N-type doped layer laminated layer (14) comprises a plurality of first N-type doped layers (141) and a plurality of second N-type doped layers (142), the plurality of first N-type doped layers (141) and the plurality of second N-type doped layers (142) are sequentially laminated on the N-type semiconductor layer (13), and the doping concentration of the first N-type doped layers (141) is greater than that of the second N-type doped layers (142);
a quantum well light-emitting layer (15) on the N-type doped layer stack (14);
an electron blocking layer (16) on the quantum well light emitting layer (15);
a P-type doped layer (17) on the electron blocking layer (16);
and the P-type semiconductor layer (18) is positioned on the P-type doped layer (17).
2. The semiconductor light emitting device according to claim 1, wherein the first N-doped layer (141) is an N-type InGaN layer.
3. The semiconductor light-emitting device according to claim 1, wherein the doping element of the first N-type doped layer (141) is Si, and the doping concentration of the first N-type doped layer (141) is 1018cm-3-5×1018cm-3。
4. The semiconductor light emitting device of claim 1, wherein the second N-doped layer (142) is an N-type AlGaN layer.
5. The semiconductor light emitting device according to claim 1, wherein the doping element of the second N-type doped layer (142) is Si, and the doping concentration of the second N-type doped layer (142) is 1017cm-3-5×1017cm-3。
6. The semiconductor light emitting device according to claim 1, wherein the doping concentration of each of the first N-type doped layer (141) and the second N-type doped layer (142) is lower than the doping concentration of the N-type semiconductor layer (13).
CN201811527469.5A 2018-12-13 2018-12-13 Semiconductor light emitting device capable of adjusting electron transfer rate Pending CN111326618A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023143307A1 (en) * 2022-01-25 2023-08-03 厦门三安光电有限公司 Micro light-emitting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023143307A1 (en) * 2022-01-25 2023-08-03 厦门三安光电有限公司 Micro light-emitting diode

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