CN109696236A - A kind of sound field particle vibration velocity sensitive structure and preparation method - Google Patents
A kind of sound field particle vibration velocity sensitive structure and preparation method Download PDFInfo
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- CN109696236A CN109696236A CN201811610266.2A CN201811610266A CN109696236A CN 109696236 A CN109696236 A CN 109696236A CN 201811610266 A CN201811610266 A CN 201811610266A CN 109696236 A CN109696236 A CN 109696236A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/42—Devices characterised by the use of electric or magnetic means
- G01P3/50—Devices characterised by the use of electric or magnetic means for measuring linear speed
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Abstract
The present invention relates to a kind of sound field particle vibration velocity sensitive structure and preparation methods, bridge opening is formed on silicon substrate, the two sides of bridge opening are respectively equipped with electrode, thin silk is equipped between the electrode of two sides, it is characterized by: the thin silk is multiple thin silks, and corresponding each thin silk, is accordingly respectively provided with 1 electrode in the two sides of bridge opening；The thin silk of Bao Siwei electrified regulation on the outermost side in the multiple thin silk, remaining thin silk are sensitive thin silk；The sound field particle vibration velocity sensitive structure is the unilateral non-equidistant thin silk sensitive structure of bridge-type.Sensing unit finite length boundary heat-conduction effect can be effectively suppressed using the unilateral non-equidistant thin silk sensitive structure of bridge-type in the present invention, improves sensor in low-frequency range response characteristic, promotes sensitive structure to the response sensitivity of low frequency sound field particle vibration velocity.
Description
Technical field
The present invention relates to a kind of sound field particle vibration velocity sensitive structure and preparation methods.
Background technique
In a large amount of acoustic measurement application studies, since sound intersity measurement and its spectrum analysis have the characteristic research of noise source
Unique superiority, become a kind of powerful of acoustic investigation.Under normal conditions, the acquisition of sound intensity information needs to measure sound
Acoustic pressure and particle velocity in.
The sensitive structure of existing particle vibration velocity sensor is, using MEMS technique (MEMS) technology, to serve as a contrast in silicon substrate
The sensitive structure being made of the metal resistive platinum wire (thin silk) of several close proximities is prepared on bottom, can directly measure space sound field biography
Medium molecular vibration speed --- sound field particle vibration velocity, specific structure are that bridge opening is formed on silicon substrate, bridge opening caused by broadcasting
Side is equipped with first electrode, and the other side of bridge opening is equipped with second electrode, third electrode, be equipped with above bridge opening the first thin silk,
Second thin silk, the first thin silk, the second thin silk are arranged in parallel and keep micro- spacing, and one end of two thin silks connects with first electrode
It connects, the other end of two thin silks is connect with second electrode, third electrode respectively.When work, resistive platinum wire is heated to about 200 DEG C
More than, when sound wave incident is to sensor, the formation forced convection of reciprocating vibration of medium particle (empty gas and water or castor oil etc.) is passed
Heat gives the heat transfer of a platinum filament to another platinum filament, causes the temperature of two platinum filaments that the change of opposite direction occurs, thus
There is difference in their resistance value.By means of wheatstone bridge circuits, the variation that the variation of resistance value is converted into voltage is exported.Heat
There are dependences with medium Particle Vibration Velocity amplitude for the change in resistance amplitude of platinum filament, so as to be surveyed using two platinum filaments
Measure sound field medium particle vibration velocity Vector Message.
It is disadvantageous in that existing for existing sound field particle vibration velocity sensitive structure, due to above-mentioned particle plane vibration speed measurement sensor
The material property of sensitive structure and its topological structure have finite length boundary heat-conduction effect, lead to loss of the heat from boundary
Rate is higher than the exchange rate as caused by low-frequency sound wave, so that sensor deteriorates seriously in low-frequency range response characteristic.The particle
Its sensitivity in 100Hz low frequency band below of plane vibration speed measurement sensor reduces with frequency and significantly decays, and causes acoustical signal
It is receiving and is generating distortion in subsequent processing, signal-to-noise ratio reduces, and keeps effective working frequency lower limit of sensor insufficient.Due to majority
The research fields such as Analysis of Noise Properties, acoustic target detection are concentrated mainly on low-frequency range sound wave, and which also limits the vibrations of this particle
The extensive use of fast measurement sensor.
Summary of the invention
Goal of the invention of the invention is to provide a kind of sound field particle vibration velocity sensitive structure and preparation method, can effectively mention
Rise the low frequency response characteristic of sound field particle vibration velocity sensitive structure.
Based on the same inventive concept, there are two independent technical solutions for present invention tool:
1, a kind of sound field particle vibration velocity sensitive structure is formed with bridge opening on silicon substrate, and the two sides of bridge opening are respectively equipped with electrode,
Thin silk is equipped between the electrode of two sides, it is characterised in that: the thin silk is multiple thin silks, and corresponds to each thin silk, in bridge opening
Two sides be accordingly respectively provided with 1 electrode；The thin silk of Bao Siwei electrified regulation on the outermost side, remaining thin silk in the multiple thin silk
For sensitive thin silk；The sound field particle vibration velocity sensitive structure is the unilateral non-equidistant thin silk sensitive structure of bridge-type.
Further, the multiple thin silk arranges from outside to inside, and thin silk spacing gradually becomes larger from outside to inside.
Further, the width of the thin silk of electrified regulation is greater than the width of sensitive thin silk.
Further, the width of each thin silk of sensitivity, structure and material are identical.
Further, the width of the thin silk of electrified regulation is 8~10 μm, and the width of sensitive thin silk is 1~2 μm.
Further, the spacing of the thin silk is 10~500 μm.
Further, the thickness of each thin silk is identical, is 0.1 μm~0.5 μm.
Further, the thin silk includes the supporting layer, adhesion layer and sensitive layer being sequentially arranged from the bottom to top.
Further, the sensitive layer of the thin silk is by one in metal material, semiconductor material, grapheme two-dimension material
Kind, two or three of material are constituted.
2. a kind of preparation method of above-mentioned sound field particle vibration velocity sensitive structure, includes the following steps:
Step 1: being sequentially depositing silica and silicon nitride support layer on a silicon substrate；
Step 2: carrying out first time gluing, photoetching and development, define thin silk, the electricity of sound field particle vibration velocity sensitive structure
Pole；
Step 3: successively depositing adhesion layer and sensitive layer；
Step 4: stripping photoresist, to form designed sensitive structure；
Step 5: carrying out second of gluing, photoetching and development, bridge opening structure needed for defining sound field environment access；
Step 6: carrying out dry etching, be sequentially etched the support layer material removed and be not covered by photoresist, be photo-etched glue and cover
The supporting layer of lid is by the hard masking layer as the deep silicon wet etching course then carried out；
Step 7: silicon substrate anisotropic wet etching forms bridge opening structure；
Step 8: finally carrying out scribing, wire bonding and encapsulation, obtain finished product.
The invention has the benefit that
The present invention is equipped with multiple thin silks, and corresponding each thin silk, the two sides of bridge opening are accordingly respectively provided with 1 electrode；Multiple thin silks
In, the thin silk of electrified regulation is located at outermost；In the multiple Bao Sizhong arranged from outside to inside, thin silk spacing gradually becomes from outside to inside
Greatly；Multiple Bao Sizhong, the thin silk width of electrified regulation are greater than the width of remaining thin silk.Sound field particle vibration velocity sensitive structure of the invention
For the unilateral non-equidistant thin silk sensitive structure of bridge-type, thin silk is made of the larger thin silk of a width and more width compared with little Bao.
In use, wider thin silk, as electrified regulation silk, heating power forms the field distribution of local space equilibrium temperature；More relatively narrow thin silks
As sensitive silk, non-equidistantly distributed, for Temperature Distribution at sensitivity volume different location.When sound wave incident, due to by
Compel convective heat transfer, space temperature field is caused to disturb, it is different in the temperature change at the thin silk different distance of electrified regulation,
As shown in Figure 9.For low frequency incident acoustic wave, bigger apart from heater strip more distant place temperature change.Therefore, the sensitivity of unequal spacing
Silk is with different temperature changes (having certain temperature poor).Since each sensitive silk geometry and material property are identical, lead to
The radiating efficiency for crossing boundary is consistent, and the temperature difference between each sensitivity silk is not influenced by finite length boundary heat-conduction effect.Therefore,
Using the unilateral non-equidistant thin silk sensitive structure of bridge-type, sensing unit finite length boundary heat-conduction effect can be effectively suppressed, change
Kind sensor promotes sensitive structure to the response sensitivity of low frequency sound field particle vibration velocity in low-frequency range response characteristic.
The multiple Bao Sizhong of the present invention, the thin silk width of electrified regulation are greater than the width of sensitive thin silk, the width of each thin silk of sensitivity
It is identical；The width of the thin silk of electrified regulation is 8~10 μm, and the width of sensitive thin silk is 1~2 μm；The spacing of thin silk is 10~500 μ
M, thin silk with a thickness of 0.1 μm~0.5 μm, thin silk is successively made of supporting layer, adhesion layer and sensitive layer from the bottom to top, thin silk
Sensitive layer forms further guarantor by one of metal material, semiconductor material, grapheme two-dimension material, two or three of material
Sensitive structure has been demonstrate,proved to the response sensitivity of low frequency sound field particle vibration velocity.
Detailed description of the invention
Fig. 1 is sound field particle vibration velocity sensitive structure schematic diagram of the present invention；
Fig. 2 is the schematic diagram of state one in processing process of the present invention；
Fig. 3 is the schematic diagram of state two in processing process of the present invention；
Fig. 4 is the schematic diagram of state three in processing process of the present invention；
Fig. 5 is the schematic diagram of state four in processing process of the present invention；
Fig. 6 is the schematic diagram of state five in processing process of the present invention；
Fig. 7 is the schematic diagram of state six in processing process of the present invention；
Fig. 8 is the schematic diagram of state seven in processing process of the present invention；
Fig. 9 is the space temperature field variation schematic diagram that different frequency incident acoustic wave generates.
Specific embodiment
The present invention is described in detail for each embodiment shown in reference to the accompanying drawing, but it should be stated that, these
Embodiment is not limitation of the present invention, those of ordinary skill in the art according to these embodiments made by function, method,
Or equivalent transformation or substitution in structure, all belong to the scope of protection of the present invention within.
Embodiment one:
As shown in Figure 1, being formed with bridge opening on silicon substrate 1, it is equipped with multiple thin silks, corresponding each thin silk, the two sides phase of bridge opening
1 electrode should be respectively provided with；Multiple Bao Sizhong, 1 thin silk of Bao Siwei electrified regulation, remaining thin silk are sensitive thin silk, electrified regulation
Thin silk is located at outermost.In the multiple Bao Sizhong arranged from outside to inside, thin silk spacing gradually becomes larger from outside to inside.The present embodiment
In, 3 thin silks are equipped with, are followed successively by the sensitive thin silk 4 of the sensitive thin silk 3, second of the thin silk 2, first of electrified regulation from outside to inside, it is corresponding every
A thin silk, the two sides of bridge opening are accordingly respectively provided with 1 electrode, i.e., first electrode 5, second electrode 6, third electrode 7, the 4th electrode 8,
5th electrode 9, the 6th electrode 10.First sensitive thin silk 3 and the second sensitive thin 4 spacing of silk are greater than the first sensitive thin silk 3 and are powered
Heat thin 2 spacing of silk.
Multiple Bao Sizhong, thin 2 width of silk of electrified regulation are greater than the width of sensitive thin silk, each thin silk of sensitivity it is of same size.
The width of the thin silk 2 of electrified regulation is 8~10 μm, and the width of sensitive thin silk is 1~2 μm.The spacing of thin silk is 10~500 μm.Respectively
The thickness of thin silk is identical, thin silk with a thickness of 0.1 μm~0.5 μm.In the present embodiment, the width of the thin silk 2 of electrified regulation is 9 μm,
The width of sensitive thin silk is 1.5 μm, thin silk with a thickness of 0.3 μm.First sensitive thin silk 3 and thin 2 spacing of silk of electrified regulation are 20 μ
M, the first sensitive thin silk 3 and the second sensitive thin 4 spacing of silk are 100 μm.Thin silk is from the bottom to top successively by supporting layer, adhesion layer and quick
Feel layer composition.The sensitive layer of thin silk is by one of metal material, semiconductor material, grapheme two-dimension material, two or three
Material composition.
Embodiment two:
In embodiment two, the width of the thin silk 2 of electrified regulation is 10 μm, and the width of sensitive thin silk is 2 μm, thin silk with a thickness of
0.4μm.First sensitive thin silk 3 is 20 μm with thin 2 spacing of silk of electrified regulation, the first sensitive thin silk 3 and the second sensitive thin 4 spacing of silk
It is 80 μm.Remaining structure of embodiment two is the same as embodiment one.
The preparation method of sound field particle vibration velocity sensitive structure of the present invention, includes the following steps:
Step 1: as shown in Fig. 2, being sequentially depositing silica and silicon nitride support layer on a silicon substrate；
Step 2: as shown in figure 3, carrying out first time gluing, photoetching and development, defining sound field particle vibration velocity sensing unit
The thin silk of more than the one group micro- spacing, the first electrode, the second electrode, the third electrode, the 4th electrode, institute
State the 5th electrode and the 6th electrode structure；
Step 3: as shown in figure 4, successively depositing adhesion layer and sensitive layer；
Step 4: as shown in figure 5, stripping photoresist, to form designed sensitive structure；
Step 5: as shown in fig. 6, carrying out second of gluing, photoetching and development, bridge needed for defining sound field environment access
Pore structure；
Step 6: as shown in fig. 7, carrying out dry etching, it is sequentially etched the support layer material removed and be not covered by photoresist,
The supporting layer being covered by photoresist is by the hard masking layer as the deep silicon wet etching course then carried out；
Step 7: as shown in figure 8, silicon substrate anisotropic wet etching, forms bridge opening structure；
Step 8: finally carrying out scribing, wire bonding and encapsulation, obtain finished product.
In conclusion sound field particle vibration velocity sensitive structure of the invention is using the unilateral non-equidistant thin silk sensitivity knot of bridge-type
Sensing unit finite length boundary heat-conduction effect can be effectively suppressed in structure, improves sensor in low-frequency range response characteristic, is promoted quick
Structure is felt to the response sensitivity of low frequency sound field particle vibration velocity.
The series of detailed descriptions listed above only for feasible embodiment of the invention specifically
Protection scope bright, that they are not intended to limit the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention
Or change should all be included in the protection scope of the present invention.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.
Claims (10)
1. a kind of sound field particle vibration velocity sensitive structure, it is formed with bridge opening on silicon substrate, the two sides of bridge opening are respectively equipped with electrode, two sides
Electrode between be equipped with thin silk, it is characterised in that: the thin silk is multiple thin silks, and corresponding each thin silk, the two of bridge opening
Side is accordingly respectively provided with 1 electrode；The thin silk of Bao Siwei electrified regulation on the outermost side in the multiple thin silk, remaining thin silk are quick
Feel thin silk；The sound field particle vibration velocity sensitive structure is the unilateral non-equidistant thin silk sensitive structure of bridge-type.
2. sound field particle vibration velocity sensitive structure according to claim 1, it is characterised in that: the multiple thin silk is from outside to inside
Arrangement, thin silk spacing gradually become larger from outside to inside.
3. sound field particle vibration velocity sensitive structure according to claim 1 or 2, it is characterised in that: the width of the thin silk of electrified regulation
Degree is greater than the width of sensitive thin silk.
4. sound field particle vibration velocity sensitive structure according to claim 3, it is characterised in that: width, the knot of each thin silk of sensitivity
Structure and material are identical.
5. sound field particle vibration velocity sensitive structure according to claim 4, it is characterised in that: the width of the thin silk of electrified regulation is
8~10 μm, the width of sensitive thin silk is 1~2 μm.
6. sound field particle vibration velocity sensitive structure according to claim 2, it is characterised in that: the spacing of the thin silk be 10~
500μm。
7. sound field particle vibration velocity sensitive structure according to claim 4, it is characterised in that: the thickness of each thin silk is identical,
It is 0.1 μm~0.5 μm.
8. sound field particle vibration velocity sensitive structure according to claim 1, it is characterised in that: the thin silk includes from the bottom to top
Supporting layer, adhesion layer and the sensitive layer being sequentially arranged.
9. sound field particle vibration velocity sensitive structure according to claim 8, it is characterised in that: the sensitive layer of the thin silk is by gold
Belong to one of material, semiconductor material, grapheme two-dimension material, two or three of material is constituted.
10. a kind of preparation method of claim 1 to 9 any one sound field particle vibration velocity sensitive structure, including walk as follows
It is rapid:
Step 1: being sequentially depositing silica and silicon nitride support layer on a silicon substrate；
Step 2: carrying out first time gluing, photoetching and development, define thin silk, the electrode of sound field particle vibration velocity sensitive structure；
Step 3: successively depositing adhesion layer and sensitive layer；
Step 4: stripping photoresist, to form designed sensitive structure；
Step 5: carrying out second of gluing, photoetching and development, bridge opening structure needed for defining sound field environment access；
Step 6: carrying out dry etching, be sequentially etched the support layer material removed and be not covered by photoresist, be covered by photoresist
Supporting layer is by the hard masking layer as the deep silicon wet etching course then carried out；
Step 7: silicon substrate anisotropic wet etching forms bridge opening structure；
Step 8: finally carrying out scribing, wire bonding and encapsulation, obtain finished product.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111220257A (en) * | 2020-01-16 | 2020-06-02 | 江苏物联网研究发展中心 | Acoustic particle velocity reactor and manufacturing method thereof |
| CN111829646A (en) * | 2020-07-27 | 2020-10-27 | 中国电子科技集团公司第三研究所 | Particle vibration velocity sensor with wide response frequency band |
| CN112013951A (en) * | 2020-09-09 | 2020-12-01 | 中国电子科技集团公司第三研究所 | Thermal temperature difference type particle vibration velocity sensor |
| CN113551761A (en) * | 2021-06-18 | 2021-10-26 | 中国电子科技集团公司第三研究所 | MEMS vector microphone and preparation method thereof |
| WO2023093471A1 (en) * | 2021-11-24 | 2023-06-01 | 华为技术有限公司 | Fluid detection apparatus, microphone, and electronic device |
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| CN111220257A (en) * | 2020-01-16 | 2020-06-02 | 江苏物联网研究发展中心 | Acoustic particle velocity reactor and manufacturing method thereof |
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| WO2023093471A1 (en) * | 2021-11-24 | 2023-06-01 | 华为技术有限公司 | Fluid detection apparatus, microphone, and electronic device |
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