CN205861876U - A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film is popped one's head in - Google Patents
A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film is popped one's head in Download PDFInfo
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- CN205861876U CN205861876U CN201620483398.3U CN201620483398U CN205861876U CN 205861876 U CN205861876 U CN 205861876U CN 201620483398 U CN201620483398 U CN 201620483398U CN 205861876 U CN205861876 U CN 205861876U
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- cantilever beam
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Abstract
This utility model is a kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film probe, belongs to micro-cantilever beam sensor field.Described sensor probe includes silicon base, clamped end, cantilever beam, chromium metal film and giant magnetostrictive thin film.Clamped end is positioned at the both sides of silicon base, and cantilever beam is connected with silicon base by clamped end, three, every side cantilever beam, and chromium metal film is plated in the upper surface of silicon base and cantilever beam, forms capacitance structure between silicon base and cantilever beam, and the capacitance structure of the same side is in parallel.Above giant magnetostrictive thin film plating chromium metal film on a cantilever beam, plating positive giant magnetostrictive thin film above the chromium metal film on the cantilever beam of side, the negative giant magnetostrictive thin film of opposite side plating, the magnetostriction coefficient of positive and negative two kinds of giant magnetostrictive thin films is same or like.In magnetic field to be measured, the flexible flexure causing optic fibre cantilev of giant magnetostrictive thin film, there is contrary change in the size of both sides shunt capacitance, draw the size of external magnetic field by differential capacitor detects analysis.
Description
Technical field
The present invention relates to a kind of magnetic field sensing probe, particularly relate to a kind of cantilever beam based on giant magnetostrictive thin film interdigital
Electric capacity magnetic field sensing is popped one's head in.
Background technology
Magnetic field sensor is the device that magnetic field intensity can be transformed into signal of telecommunication output.Traditional magnetic field sensor is main
Measuring coil magnetometer, optical pumping magnetometer, nuclear precession magnetometer, superconduction is had to interfere quantum magnetometer, magnetic resistance magnetometer, Hall to pass
Sensor, optical cable magnetometer, magneto-optical sensor etc..At present, the development trend of magnetic field sensor is highly sensitive, temperature stability
Good, strong interference immunity, miniaturization, integrated, intelligent and low-power consumption, it is excellent that traditional magnetic field sensor is difficult to that these are fully achieved
Optimum energy.Along with the development of microelectromechanical systems (micro-electro-mechanical system, MEMS), magnetic field passes
Sensor, to miniaturization and miniaturization, is possible not only to reduce cost of manufacture, it is also possible to realize the measured signal to narrow space
Detection.Compare with traditional devices, MEMS magnetic field sensor has that volume is little, lightweight, low in energy consumption, low cost and reliability high
Deng the advantage that traditional sensors is incomparable, meet the development trend of magnetic field sensor.
The structure of the magnetic field sensing probe of the present invention is machined cantilever beam on a silicon substrate, and cantilever beam upper surface is coated with super magnetic
Cause self-adhering film (GMF:Giant Magnetostrictive Thin Film), and form interdigital structure, on a silicon substrate
It is coated with chromium metal film, cantilever beam is coated with chromium metal film and giant magnetostrictive thin film, between silicon base and cantilever beam, form electric capacity
Structure, the change in magnetic field to be measured causes the flexible so that cantilever beam bends of giant magnetostrictive thin film, and capacitance becomes
Changing, can be detected the size in magnetic field to be measured by the change of detection capacitance, condenser type detection has simple in construction and high-resolution
The advantage of rate, and can work under the mal-condition such as high temperature, radiation.The magnetic field sensing probe of the present invention has miniaturization, weight
Amount is light, low cost and other advantages.
Summary of the invention
The present invention is directed to the deficiency of conventional magnetic field sensors, devise a kind of interdigital capacitor based on giant magnetostrictive thin film
Magnetic field sensing is popped one's head in.
The technical solution used in the present invention: a kind of interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film is popped one's head in, bag
Include: silicon base, clamped end, cantilever beam, chromium metal film, giant magnetostrictive thin film.
Described clamped end is positioned at the both sides of silicon base.
Described cantilever beam is connected with silicon base by clamped end, three, every side cantilever beam, and the cantilever beam of both sides forms fork
Refer to structure.
Described chromium metal film is plated in the upper surface of silicon base and cantilever beam, forms capacitive junctions between silicon base and cantilever beam
Structure, the capacitance structure of the same side is in parallel.
Above described giant magnetostrictive thin film plating chromium metal film on a cantilever beam, the chromium metal film on the cantilever beam of side
Plate positive giant magnetostrictive thin film, the negative giant magnetostrictive thin film of opposite side plating, the mangneto of positive and negative two kinds of giant magnetostrictive thin films above
Coefficient of dilatation is same or like.In magnetic field to be measured, due to the flexible of positive and negative giant magnetostrictive thin film and stretching, make both sides
Cantilever beam bends with deviating from silicon base direction to silicon base direction respectively, forms differential capacitor.
The invention has the beneficial effects as follows:
1 on a cantilever beam surface and silica-based upper surface chrome-plated metal film as adhesion layer and electrode layer, homonymy cantilever beam and
Electric capacity between silicon base forms three electric capacity parallel-connection structures, improves the problem that single detection capacitance is faint.
The cantilever beam of 2 both sides defines interdigital structure, plates positive and negative type contrary on the chromium metal film of both sides cantilever beam
Giant magnetostrictive thin film, by the detection of differential capacitor being drawn the size of external magnetic field, sensor probe can be improved to magnetic
The accuracy of detection of field.
Plating giant magnetostrictive thin film above the 3 chromium metal films on the cantilever beam of both sides, giant magnetostrictive thin film has bigger
Magnetostriction coefficient, bigger magnetostriction can be produced, thus be effectively improved the accuracy of detection to magnetic field.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings and detailed description of the invention the invention will be further described.
Fig. 1 is the axonometric chart of sensor probe of the present invention.
Fig. 2 is the half-sectional view of sensor probe of the present invention.Wherein, 1 is silicon base, and 2 is clamped end, and 3 is cantilever beam, and 4 are
Chromium metal film, 5 is giant magnetostrictive thin film.
Fig. 3 is the fabrication processing figure of sensor probe of the present invention.
Fig. 4 is the testing circuit flow chart of sensor probe of the present invention.
Detailed description of the invention
The technical solution adopted in the present invention is: a kind of cantilever beam interdigital structure magnetic field based on giant magnetostrictive thin film passes
Sense probe, including: silicon base 1, clamped end 2, cantilever beam 3, chromium metal film 4, giant magnetostrictive thin film 5, as shown in Figure 2.
Described cantilever beam 3 is connected with silicon base by clamped end, becomes two groups in opposite direction in silicon base arranged on both sides,
Often three cantilever beams of group, two groups of cantilever beams form interdigital structure, as shown in Figure 1.
Described chromium metal film 4 is plated in silicon base 1 and the upper surface of cantilever beam 3, serves as the adhesion of giant magnetostrictive thin film
Layer and electrode layer, form capacitance structure, three capacitance structure parallel connections of homonymy between silicon base and cantilever beam.
Described giant magnetostrictive thin film plates on a cantilever beam above chromium metal film, on the chromium metal film of side cantilever beam
Positive giant magnetostrictive thin film, the negative giant magnetostrictive thin film of opposite side plating, the magnetostriction system of two kinds of giant magnetostrictive thin films are plated in face
Number is same or like, and giant magnetostrictive thin film produces flexible under the influence of a magnetic field, and anisotropy constant is almost at normal temperatures for it
Being zero to illustrate huge magnetostrictive effect, magnetostriction coefficient is up to 1500-2000ppm, it is possible to realize sensitivity in magnetic field
Detection.
Fabrication processing figure of the present invention is as it is shown on figure 3, concrete steps: sputter chromium gold in (a) silicon base after cleaning
Belong to film；(b) sputtering SiO2Sacrifice layer, utilizes photoetching method at SiO2The region of clamped end is carved on sacrifice layer；C () is at SiO2Sacrificial
Grown silicon nitride structure sheaf on domestic animal layer, sputters chromium metal film in silicon nitride structural layer；D () obtains the cantilever of side by photoetching process
The region of beam shape, sputters positive giant magnetostrictive thin film；The region of the cantilever beam shape of opposite side is obtained again, sputtering by photoetching process
Negative giant magnetostrictive thin film；E () utilizes photoetching process to obtain the region of cantilever beam shape of interdigital structure, then by etching method in structure
Layer obtains interdigital cantilever beam structure；F () removes SiO2Sacrifice layer.
The ultimate principle in the detection magnetic field of the present invention is: in magnetic field, giant magnetostrictive thin film occurs flexible, thus causes
The flexure of cantilever beam.Electrode layer is served as, therefore at cantilever beam and silica-based owing to being coated with chromium metal film on cantilever beam and silicon base
Forming electric capacity, three electric capacity parallel connections of the same side, when cantilever beam beam occurs flexure, the distance between two-plate becomes at the end
Change, so that capacitance changes.When magnetic field to be measured increases, it is coated with the cantilever beam of positive giant magnetostrictive thin film to silicon base
Direction bends, and the distance between silicon base and cantilever beam diminishes, and capacitance becomes big, and is coated with the cantilever of negative giant magnetostrictive thin film
Beam deviates from the flexure of silicon base direction, and the distance between silicon base and cantilever beam becomes big, and capacitance diminishes, and finally utilizes differential electricity
The detection held draws the change in magnetic field to be measured.
As shown in Figure 4, whole testing circuit is by detection and the amplification applying differential capacitor for differential capacitor testing circuit block diagram
Circuit, full-wave rectifying circuit and low-pass filter circuit composition.The high_frequency sine wave signal that HF signal generator produces puts on
Measured capacitance, is transformed into measured capacitance capacitive reactance, then capacitive reactance is become ac voltage signal, through amplifier by C/V conversion
Amplify, be re-fed into full-wave rectifying circuit and be transformed into DC level, eventually pass low-pass filtering, be input to computer and be analyzed.
Claims (3)
1. a cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film probe, including: silicon base, clamped end,
Cantilever beam, chromium metal film, giant magnetostrictive thin film, silicon base upper surface chrome-plated metal film, clamped end is positioned at the both sides of silicon base,
Cantilever beam is connected with silicon base by clamped end, three, every side cantilever beam, and the cantilever beam of both sides forms interdigital structure, on cantilever beam
Chrome-faced metal film and giant magnetostrictive thin film.
A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film the most according to claim 1 is popped one's head in,
It is characterized in that chromium metal film is plated in the upper surface of silicon base upper surface and cantilever beam, make to be formed between cantilever beam and silicon base electric capacity
Structure, three capacitance structure parallel connections of homonymy.
A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film the most according to claim 1 is popped one's head in,
It is characterized in that giant magnetostrictive thin film is plated in above the chromium metal film of cantilever beam upper surface, above the chromium metal film of side cantilever beam
Plate positive giant magnetostrictive thin film, the negative giant magnetostrictive thin film of opposite side plating, the magnetostriction coefficient of two kinds of giant magnetostrictive thin films
Identical.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620483398.3U CN205861876U (en) | 2016-05-20 | 2016-05-20 | A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film is popped one's head in |
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| CN201620483398.3U CN205861876U (en) | 2016-05-20 | 2016-05-20 | A kind of cantilever beam interdigital capacitor magnetic field sensing based on giant magnetostrictive thin film is popped one's head in |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106569155A (en) * | 2016-05-20 | 2017-04-19 | 中国计量大学 | Cantilever beam interdigital capacitance magnetic field sensing probe based on super magnetic induced shrinkage or elongation film |
| CN107329099A (en) * | 2017-06-22 | 2017-11-07 | 东南大学 | One kind rocks parallel-moving type microcomputer emf sensor |
| CN107356889A (en) * | 2017-06-22 | 2017-11-17 | 东南大学 | A kind of interdigital microcomputer emf sensor of torsional pendulum type |
| CN108879071A (en) * | 2018-07-03 | 2018-11-23 | 西安电子科技大学 | Magnetoelectricity antenna and preparation method thereof based on magnetostriction piezoelectric material |
| CN111537921A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
-
2016
- 2016-05-20 CN CN201620483398.3U patent/CN205861876U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106569155A (en) * | 2016-05-20 | 2017-04-19 | 中国计量大学 | Cantilever beam interdigital capacitance magnetic field sensing probe based on super magnetic induced shrinkage or elongation film |
| CN106569155B (en) * | 2016-05-20 | 2019-03-26 | 中国计量大学 | A kind of cantilever beam interdigital capacitor magnetic field sensing probe based on giant magnetostrictive thin film |
| CN107329099A (en) * | 2017-06-22 | 2017-11-07 | 东南大学 | One kind rocks parallel-moving type microcomputer emf sensor |
| CN107356889A (en) * | 2017-06-22 | 2017-11-17 | 东南大学 | A kind of interdigital microcomputer emf sensor of torsional pendulum type |
| CN107329099B (en) * | 2017-06-22 | 2019-08-20 | 东南大学 | One kind rocking parallel-moving type microcomputer emf sensor |
| CN107356889B (en) * | 2017-06-22 | 2019-08-20 | 东南大学 | A kind of interdigital microcomputer emf sensor of torsional pendulum type |
| CN108879071A (en) * | 2018-07-03 | 2018-11-23 | 西安电子科技大学 | Magnetoelectricity antenna and preparation method thereof based on magnetostriction piezoelectric material |
| CN111537921A (en) * | 2020-04-22 | 2020-08-14 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
| CN111537921B (en) * | 2020-04-22 | 2022-02-01 | 西安交通大学 | Cantilever beam type MEMS magnetic sensor and preparation method thereof |
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| CF01 | Termination of patent right due to non-payment of annual fee |