CN109690795A - 包括用于uv led阵列的厚膜层的散热器,以及形成uv led阵列的方法 - Google Patents
包括用于uv led阵列的厚膜层的散热器,以及形成uv led阵列的方法 Download PDFInfo
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Abstract
提供一种紫外线LED阵列。所述紫外线LED阵列包括散热器。所述散热器包括(i)基座散热器元件,以及(ii)施加至所述基座散热器元件的厚膜层。所述紫外线LED阵列还包括直接耦合至所述散热器的所述厚膜层的多个紫外线LED元件。
Description
相关申请交叉引用
本申请要求2016年9月16日提交的第62/395,690号美国临时专利申请的权益,所述申请的内容以引用方式并入本文中。
技术领域
本发明涉及紫外线发光二极管(UV LED)阵列的基板,且更具体来说,涉及包括用于UV LED阵列的厚膜层的散热器。
背景技术
紫外线辐射LED(还称为UV LED,或紫外线LED)与例如紫外线固化应用(例如,油墨、例如粘合剂的结合剂、涂层等的紫外线固化) 的许多应用结合使用。可以称为UV LED裸片(例如,裸露的UV LED 裸片、封装的UV LED裸片等)的UV LED附接至基板,以形成紫外线LED阵列(还称为UV LED阵列)。
紫外线LED阵列应用的一个挑战是从阵列中去除热量。散热器通常用于去除热量。在图1中示出包括传统散热器配置的紫外线LED 阵列100。
在图1的配置中,多个紫外线LED裸片112(示为一组)附接至基板110(例如,FR4基板、氮化铝基板)。焊膏层108(例如,铟层)设置在基板110与镀金铜板106之间。导热垫104设置在镀金铜板106 与散热器102之间。例如,散热器102可以是包括用于空气冷却的散热片的铝散热器。
由于包括在图1的紫外线LED阵列100中的各种层,因此存在相对高的热阻,由此使从紫外线LED裸片112至散热器102的散热不合需要地低效。
因此,需要提供用于紫外线LED阵列的改进的散热器。
发明内容
根据本发明的示例性实施方案,提供一种紫外线LED阵列。所述紫外线LED阵列包括散热器。所述散热器包括(i)基座散热器元件,以及(ii)施加至所述基座散热器元件的厚膜层。所述紫外线LED阵列还包括直接耦合至所述散热器的所述厚膜层的多个紫外线LED元件。
根据本发明的另一示例性实施方案,提供一种形成紫外线LED 阵列的方法。所述方法包括:(a)将厚膜层选择性地施加至基座散热器元件的表面;(b)烧制所述基座散热器元件以及施加至所述基座散热器元件的所述厚膜层,以形成散热器;以及(c)将多个紫外线LED元件直接附接至所述散热器的所述厚膜层。
根据本发明的另一示例性实施方案,提供另一种形成紫外线LED 阵列的方法。所述方法包括:(a)将厚膜介电层选择性地施加至基座散热器元件的表面;(b)将厚膜导电层选择性地施加至在步骤(a)中施加至所述基座散热器元件的所述表面的所述厚膜介电层;(c)将阻焊层选择性地施加至在步骤(b)中施加至所述厚膜介电层的所述表面的所述厚膜导电层;以及(d)将多个UV LED元件附加至所述阻焊层。
附图说明
当结合附图阅读时,从以下详细描述中最佳地理解本发明。需要强调的是,根据惯例,附图的各种特征未按比例绘制。相反,为了清楚起见,各种特征的尺寸被任意扩大或减小。在附图中包括以下图式:
图1是传统紫外线LED阵列的分解透视图;
图2是根据本发明的示例性实施方案的紫外线LED阵列的分解透视图;
图3是根据本发明的另一示例性实施方案的另一紫外线LED阵列的分解透视图;
图4A至图4E是示出图2的紫外线LED阵列的组装的一系列框图;以及
图5至图6是示出根据本发明的示例性实施方案的组装紫外线 LED阵列的方法的框图。
具体实施方式
如本文所使用,术语“紫外线LED元件”和“UV LED元件”旨在广泛地理解成指代任何紫外线LED光产生元件,包括但不限于,连接至基板的紫外线LED裸片(例如,裸露的裸片、封装的裸片等)。根据本发明的示例性实施方案,紫外线LED元件直接附接至散热器(例如,使用焊膏),使得散热器用作基板。散热器可以是空气冷却的紫外线 LED灯头的一部分。
也就是说,根据本发明的某些示例性实施方案,导电和绝缘浆料为空气冷却的紫外线LED灯头提供热、绝缘和电特性。与例如图1 中所示的传统结构相比,可以使用厚膜技术简化紫外线LED阵列的结构。使用厚膜沉积技术,可以形成整体结构,所述整体结构组合散热器和紫外线LED元件所附接至的基板。此整体结构提供低热阻,从而允许使用散热器(例如,空气冷却的散热器)有效地去除热量。
与例如图1中所示的传统结构相比,改进的散热器/基板提供改进的机械、热和电路径。使用本发明的技术,提供一种通过更少零件和改进的热路径组装紫外线LED阵列的更有效方法。施加至基座散热器元件的厚膜浆料(例如,其中基座散热器元件可以由铝或其它散热器材料形成)可以理想地具有与基座散热器元件非常接近(或基本上相同)的热膨胀系数。通过厚膜层(其可以作为一系列层施加至基座散热器元件)的热膨胀系数类似于基座散热器元件,降低装置(包括装置中的焊料接头)发生故障的风险。
图2以分解图示出紫外线LED阵列200。紫外线LED阵列200 包括散热器,所述散热器包括基座散热器元件202(例如,包括用于空气冷却等的冷却脊或散热片202a的铝元件);以及厚膜层204,所述厚膜层施加至最接近裸片附接LED 206(即,施加至散热器的多个紫外线LED元件,例如,裸露的紫外线LED裸片元件或封装的紫外线LED裸片元件)的基座散热器元件202的表面。可以例如使用印刷 (例如,丝网印刷、绢网印刷等)技术等选择性地施加厚膜层204。如下文将更详细地说明,厚膜层204可以通过多个印刷步骤和/或其它处理步骤以一系列层施加。
在图2中,多个紫外线LED元件206示为一组;然而,应了解,多个紫外线LED元件206可以通过任何所需方式施加(例如,一次一个元件、在“群”焊或附接过程中一次多个元件等)。图2说明施加在多个紫外线LED元件206与基座散热器元件202之间的厚膜层204。
图3说明本发明的紫外线LED阵列300的另一示例性配置。紫外线LED阵列300包括基座散热器元件302,所述基座散热器元件可以由铝或适合于散热器的另一种材料形成。尽管图3示出简化的基座散热器元件,但应理解,基座散热器元件可以具有任何所需配置,例如包括空气冷却的脊/散热片等。将例如使用丝网印刷技术将厚膜层304选择性地施加至基座散热器元件。例如,可以将厚膜层304印刷成具有所需导电路径,使得印刷的导电路径/迹线与附接至散热器的多个紫外线LED元件对准。
在厚膜层304施加至基座散热器元件302且随后固化/烧制(例如,在炉子等中)之后,提供散热器。散热器被配置成用作基板,所述基板被配置成接收多个紫外线LED元件306。紫外线LED元件306使用焊膏306b附接至散热器(即,散热器的厚膜部分)。如图3中所示,焊膏306b可以在附接至散热器之前施加至每个紫外线LED元件的后侧。
图4A至图4E是示出根据本发明的方面的用于组装紫外线LED 阵列200(例如,在图2的分解图中示出的阵列200)的示例性方法的一系列框图。在图4A中,提供基座散热器元件202。例如使用丝网工艺(例如,绢网工艺等)将介电层204a施加至基座散热器元件202 的表面。在图4A中施加介电层204a之后,施加导电层204b,如图 4B中所示。例如,可以使用丝网工艺(例如,绢网工艺等)将导电层 204b施加至介电层204a上(所述介电层已施加至基座散热器元件 202)。在图4B中施加导电层204b之后,施加阻焊层204c,如图4C 中所示。例如,可以使用丝网工艺(例如,绢网工艺等)将阻焊层204c 施加至导电层204b上(所述导电层已施加至介电层204a,所述介电层已施加至基座散热器元件202)。
在施加包括示例性厚膜的三个层(即,介电层204a、导电层204b 和阻焊层204c)之后,可以固化/烧制(例如,在炉子等中)散热器(包括基座散热器元件202和三个施加层204a、204b和204c),使得三个层 204a、204b和204c形成现在称为厚膜层204的层(例如,参见图4D)。随后,如图4D中所示,将多个紫外线LED元件206施加至现在固化的厚膜层204上。紫外线LED元件206(其可以包括焊膏,为了简明起见未示出焊膏)可以通过任何所需方式施加(例如,在拾放过程中一次一个元件,在群焊/附接过程中等)。图4E示出完全组装的紫外线 LED阵列200,包括(i)散热器(包括基座散热器元件202以及施加至基座散热器元件的厚膜层204),以及(ii)多个紫外线LED元件206。
图5至图6是根据本发明的某些示例性实施方案的流程图。如本领域技术人员将理解,可以省略流程图中包括的某些步骤;可以添加某些附加步骤;并且可以从所示次序更改步骤的次序。
图5示出提供形成紫外线LED阵列的方法。在步骤500处,将厚膜层选择性地施加至(例如,使用丝网印刷等)基座散热器元件(例如,包括用于空气冷却的冷却脊/散热片的铝散热器元件)的表面。例如,可以使用上文结合图4A至图4D描述的技术施加厚膜层。在步骤502处,烧制基座散热器元件以及施加至所述基座散热器元件的厚膜层,以形成散热器。因此,提供将用作基板(用于接收多个紫外线 LED元件)和散热器(用于去除由多个紫外线LED元件产生的热量)的整体结构(例如,图4D中所示的散热器,包括基座散热器元件202和厚膜层204)。在步骤504处,例如使用焊膏(例如,铟焊膏)将多个紫外线LED元件(例如,图4D中所示的紫外线LED元件206)直接附接至散热器的厚膜层。
图6示出形成紫外线LED阵列的另一种方法。在步骤600处,将厚膜介电层选择性地施加至基座散热器元件的表面(例如,参见在图4A中将层204a施加至基座散热器元件202的表面)。在步骤602 处,烧制(例如,在炉子等中固化)基座散热器元件,其中厚膜介电层施加至所述基座散热器元件。在步骤604处,将厚膜导电层选择性地施加至厚膜介电层,所述厚膜介电层在步骤600中施加至基座散热器元件的表面(例如,参见在图4B中将层204b施加至层204a)。在步骤 606处,烧制(例如,在炉子等中固化)基座散热器元件,其中厚膜介电层和厚膜导电层施加至所述基座散热器元件。在步骤608处,将阻焊层选择性地施加至厚膜导电层,所述厚膜导电层在步骤604中施加至厚膜介电层(例如,参见在图4C中将层204c施加至层204b)。在步骤610处,烧制(例如,在炉子等中固化)基座散热器元件,其中厚膜介电层和厚膜导电层以及阻焊层施加至所述基座散热器元件。在完成步骤610之后,已形成散热器,包括基座散热器元件(例如,图4A中所示的元件202)以及施加至所述基座散热器元件的厚膜层(例如,厚膜层204,包括图4A至图4C中的层204a、204b和204c)。在步骤 612处,将多个UV LED元件附接至散热器的厚膜(例如,施加至图4E中的厚膜层204)。具体来说,多个UVLED元件可以被视为直接附接至阻焊层(或通过厚膜层的阻焊层附接至厚膜层)。
通过本发明的各种示例性实施方案实现多个益处。提供的初始益处在于,可以省略用于传统紫外线LED阵列组装中的某些组装件。其中散热器功能以及基板功能组合成单个散热器元件的整体结构由此允许改进机械、热和电路径。具体来说,例如,提供与传统散热器接合部相比改进的热性能,因为本发明的接合部可以具有显著减小的厚度(例如,密耳对比微米的数量级)。
用于形成厚膜层的浆料可以理想地具有与基座散热器元件非常接近的热膨胀系数(例如,接近铝的热膨胀系数)。厚膜技术可以例如使用用于pcb制造的工业标准技术应用,并且因此可以批量生产以及甚至自动化。这种简化的制造方法与需要大量手动步骤将层结合在一起的传统设计中的“多层堆叠”形成鲜明对比。
与本发明的紫外线LED阵列(例如,图2至图4中所示)相比,传统紫外线LED阵列(例如,图1中所示)的测试示出本发明紫外线LED 阵列的某些改进特征。例如,当相同电流和电压施加至图1的阵列与图2至图4的阵列时,本发明阵列的峰值温度比传统阵列低得多(例如,低约20℃)。这种较低温度允许本发明的紫外线LED阵列在较高功率输出(以及因此来自紫外线LED阵列的较高紫外线输出)下操作。
本领域技术人员将了解,为简明起见在应用中省略关于紫外线 LED阵列的某些细节。例如,紫外线LED阵列将包括用于散热器上的每个紫外线LED元件的电接触区域(例如,迹线、焊盘等)。
尽管本文主要参考紫外线LED阵列组装示出和描述本发明,但是本发明不限于此。例如,本发明的教示还应用于利用热管理的高电流驱动器组件。
尽管本文参考具体实施方案示出和描述本发明,但是本发明并不意图限于所示的细节。相反,在不偏离本发明的情况下,可以在权利要求书的等效物的范围和限度内对细节进行各种修改。
Claims (20)
1.一种紫外线LED阵列,所述紫外线LED阵列包括:
散热器,所述散热器包括(i)基座散热器元件,以及(ii)施加至所述基座散热器元件的厚膜层;以及
多个紫外线LED元件,所述多个紫外线LED元件直接耦合至所述散热器的所述厚膜层。
2.如权利要求1所述的紫外线LED阵列,其中所述多个紫外线LED元件使用焊膏直接耦合至所述散热器的所述厚膜层。
3.如权利要求2所述的紫外线LED阵列,其中所述焊膏包括铟。
4.如权利要求1所述的紫外线LED阵列,其中所述多个紫外线LED元件使用导电环氧树脂直接耦合至所述散热器的所述厚膜层。
5.如权利要求1所述的紫外线LED阵列,其中所述基座散热器元件是铝。
6.如权利要求1所述的紫外线LED阵列,其中所述基座散热器元件和所述厚膜层的热膨胀系数基本上相同。
7.如权利要求1所述的紫外线LED阵列,其中所述厚膜层使用丝网工艺施加至所述基座散热器元件。
8.如权利要求7所述的紫外线LED阵列,其中在将所述厚膜层施加至所述基座散热器元件之后,烧制包括所述基座散热器元件和所述厚膜层的所述散热器。
9.如权利要求1所述的紫外线LED阵列,其中所述紫外线LED阵列是空气冷却的UV LED灯头。
10.如权利要求1所述的紫外线LED阵列,其中所述多个紫外线LED元件是裸露的半导体裸片LED元件。
11.如权利要求1所述的紫外线LED阵列,其中所述多个紫外线LED元件是封装的半导体裸片LED元件。
12.一种形成紫外线LED阵列的方法,所述方法包括以下步骤:
(a)将厚膜层选择性地施加至基座散热器元件的表面;
(b)烧制所述基座散热器元件以及施加至所述基座散热器元件的所述厚膜层,以形成散热器;以及
(c)将多个UV LED元件直接附接至所述散热器的所述厚膜层。
13.如权利要求12所述的方法,其中步骤(c)包括使用焊膏将所述多个UV LED元件直接附接至所述散热器的所述厚膜层。
14.如权利要求12所述的方法,其中步骤(c)包括使用包括铟的焊膏将所述多个UV LED元件直接附接至所述散热器的所述厚膜层。
15.如权利要求12所述的方法,其中步骤(c)包括使用导电环氧树脂将所述多个UV LED元件直接附接至所述散热器的所述厚膜层。
16.如权利要求12所述的方法,其中步骤(a)包括使用丝网工艺将所述厚膜层选择性地施加至所述基座散热器元件的所述表面。
17.如权利要求12所述的方法,其中所述形成的紫外线LED阵列是空气冷却的UV LED灯头。
18.如权利要求12所述的方法,其中步骤(a)包括通过一系列步骤将所述厚膜层施加至所述基座散热器元件的所述表面,所述一系列步骤包括(a1)将介电层施加至所述基座散热器元件的所述表面,(a2)将导电层施加至所述介电层,以及(a3)将阻焊层施加至所述导电层。
19.如权利要求12所述的方法,其中在步骤(c)中附接的所述多个紫外线LED元件是裸露的半导体裸片LED元件。
20.一种形成紫外线LED阵列的方法,所述方法包括以下步骤:
(a)将厚膜介电层选择性地施加至基座散热器元件的表面;
(b)将厚膜导电层选择性地施加至在步骤(a)中施加至所述基座散热器元件的所述表面的所述厚膜介电层;
(c)将阻焊层选择性地施加至在步骤(b)中施加至所述厚膜介电层的所述表面的所述厚膜导电层;以及
(d)将多个UV LED元件附接至所述阻焊层。
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JP2005534201A (ja) * | 2002-07-25 | 2005-11-10 | ジョナサン エス. ダーム、 | 発光ダイオードを硬化用に使用するための方法および装置 |
JP2015023244A (ja) * | 2013-07-23 | 2015-02-02 | 富士フイルム株式会社 | Led発光素子用反射基板、led発光素子用配線基板およびledパッケージならびにled発光素子用反射基板の製造方法 |
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KR20190040024A (ko) | 2019-04-16 |
EP3513442A1 (en) | 2019-07-24 |
CA3036248A1 (en) | 2018-03-22 |
TW201820558A (zh) | 2018-06-01 |
WO2018053005A1 (en) | 2018-03-22 |
US10330304B2 (en) | 2019-06-25 |
US20180080644A1 (en) | 2018-03-22 |
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