CN109683408A - 显示面板用基板的制造方法 - Google Patents

显示面板用基板的制造方法 Download PDF

Info

Publication number
CN109683408A
CN109683408A CN201811197186.9A CN201811197186A CN109683408A CN 109683408 A CN109683408 A CN 109683408A CN 201811197186 A CN201811197186 A CN 201811197186A CN 109683408 A CN109683408 A CN 109683408A
Authority
CN
China
Prior art keywords
formation process
wiring
mentioned
electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811197186.9A
Other languages
English (en)
Inventor
伊藤俊克
大东彻
今井元
前田昌纪
北川英树
原义仁
川崎达也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of CN109683408A publication Critical patent/CN109683408A/zh
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133357Planarisation layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134372Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/136295Materials; Compositions; Manufacture processes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

提供一种显示面板用基板的制造方法,能削减工序数。其特征在于,具备:透明导电膜形成工序,在覆盖设置于玻璃基板(31)的TFT(32)的平坦化膜(47)上形成透明导电膜(51);金属膜形成工序,在透明导电膜形成工序之后进行,以覆盖透明导电膜(51)的形式形成金属膜(52);配线形成工序,在金属膜形成工序之后进行,通过对金属膜(52)进行蚀刻而形成配线(50);以及透明电极形成工序,在配线形成工序之后进行,通过对透明导电膜(51)进行蚀刻而形成与配线(50)连接的像素电极(33)。

Description

显示面板用基板的制造方法
技术领域
本发明涉及显示面板用基板的制造方法。
背景技术
以往,作为具备触摸面板功能的显示面板的一例,已知下述专利文献1所记载的显示面板。专利文献1所记载的显示面板构成为,包括透明导电膜的共用电极与传导性线(配线)被电连接,来自驱动器的触摸驱动信号经由传导性线供应到共用电极。由此,能使共用电极作为触摸电极发挥功能。
现有技术文献
专利文献
专利文献1:特开2016-126336号公报
发明内容
发明要解决的问题
在制造上述构成的显示面板用基板时,需要在玻璃基板等基板上形成多个膜,需要较多的制造工序。因此,希望削减工序数。
本发明是基于上述的情况而完成的,其目的在于提供能削减工序数的显示面板用基板的制造方法。
用于解决问题的方案
为了解决上述问题,本发明的显示面板用基板的制造方法的特征在于,具备:透明导电膜形成工序,在覆盖设置于基板的开关元件的平坦化膜上形成透明导电膜;金属膜形成工序,在上述透明导电膜形成工序之后进行,以覆盖上述透明导电膜的形式形成金属膜;配线形成工序,在上述金属膜形成工序之后进行,通过对上述金属膜进行蚀刻而形成配线;以及透明电极形成工序,在上述配线形成工序之后进行,通过对上述透明导电膜进行蚀刻而形成与上述配线连接的透明电极。
在上述方法中,通过使包括透明导电膜的透明电极介于配线(金属膜)与平坦化膜之间,从而与在平坦化膜上直接形成配线的情况相比,能提高配线的紧贴性。如果按平坦化膜、透明导电膜、配线、透明电极的顺序进行层叠,则需要分别具备在配线与平坦化膜之间形成透明导电膜的工序和形成用于构成透明电极的透明电极膜的工序。与之相比,在上述方法中,由于按平坦化膜、透明电极、配线的顺序进行层叠,因此能进一步减少形成透明电极膜的工序。
另外,如果设为按平坦化膜、配线、透明电极的顺序进行层叠的构成,则在配线的形成部位,透明电极会以越过配线的形式配置,产生配线的厚度的量的台阶。其结果是,透明电极有可能在台阶部中部分地间断。通过如上述方法那样按平坦化膜、透明电极、配线的顺序进行层叠,能抑制在透明电极中产生台阶,能抑制透明电极部分地间断的情况。
发明效果
根据本发明,能实现提供能削减工序数的显示面板用基板的制造方法的目的。
附图说明
图1是将本发明的实施方式1的液晶显示装置按沿着长边方向(Y轴方向)的切断线切断的截面图。
图2是示出阵列基板的截面图。
图3是示出阵列基板的俯视图。
图4是示出金属膜形成工序的截面图。
图5是示出在金属膜的上层形成了抗蚀剂的状态的截面图。
图6是示出通过蚀刻形成了配线的状态的截面图。
图7是示出在配线的上层形成了抗蚀剂的状态的截面图。
图8是示出比较例的截面图。
图9是示出在比较例中共用电极发生了断线的状态的截面图。
图10是示出实施方式2的阵列基板的截面图。
附图标记说明
11…液晶面板(显示面板),31…玻璃基板(基板),32…TFT(开关元件),33…像素电极(透明电极),36…漏极电极,39…共用电极,40…绝缘膜,45…接触孔,47…平坦化膜,50…配线,51…透明导电膜,52…金属膜,53…抗蚀剂。
具体实施方式
<实施方式1>
根据图1至图9说明本发明的实施方式1。如图1所示,液晶显示装置10具备:液晶面板11(显示面板);控制电路基板12(外部的信号供应源),其对液晶面板11所具备的驱动器17供应各种输入信号;柔性基板13(外部连接部件),其将液晶面板11和外部的控制电路基板12电连接;以及背光源装置14(照明装置),其是向液晶面板11供应光的外部光源。如图1所示,背光源装置14具备:底座18,其呈朝向表侧(液晶面板11侧)开口的大致箱形;未图示的光源(例如冷阴极管、LED、有机EL等),其配置在底座18内;以及未图示的光学构件,其以覆盖底座18的开口部的形式配置。光学构件具有将从光源发出的光转换为面状等功能。液晶面板11具有能显示图像的显示区域A1和包围显示区域A1的非显示区域A2。
另外,如图1所示,液晶显示装置10具备用于收纳液晶面板11和背光源装置14的表里一对外装构件15、16,在表侧的外装构件15,形成有用于从外部视认显示于液晶面板11的显示区域A1的图像的开口部19。本实施方式的液晶显示装置10例如用于便携电话(包含智能手机等)、笔记本电脑(包含平板型笔记本电脑等)、可穿戴终端(包含智能手表等)、便携型信息终端(包含电子书、PDA等)、便携型游戏机、数码相框等各种电子设备(未图示)。
如图1所示,液晶面板11具备:一对基板21、30,其配置为相对状;液晶层23(介质层),其配置在一对基板21、30间,包含作为伴随着电场的施加而光学特性发生变化的物质的液晶分子;以及密封构件24,其配置在一对基板21、30之间并且通过包围液晶层23而密封液晶层23。一对基板21、30中的表侧(正面侧、图1的上侧)的基板为CF基板21(相对基板),里侧(背面侧)的基板为阵列基板30(有源矩阵基板、元件侧基板)。此外,液晶层23所包含的液晶分子例如为水平取向,但是不限于此。另外,在两基板21、30的外面侧,分别贴附有未图示的偏振板。CF基板21是通过在玻璃基板(未图示)的内面侧(液晶层23侧)层叠彩色滤光片、覆膜、取向膜(均未图示)而构成的。彩色滤光片具备排列为矩阵状的R(红色)、G(绿色)、B(蓝色)这三色的着色部(未图示)。各着色部与阵列基板30的各像素相对配置。
如图2所示,阵列基板30是通过光刻法在玻璃基板31(基板)的内面侧层叠形成各种膜而成的。另外,在玻璃基板31的一边(非显示区域A2的一部分),设置有驱动液晶面板11的驱动器17(面板驱动部)(参照图1)。在显示区域A1中,在玻璃基板31的内面侧(液晶层23侧、图2的上侧)设置有作为开关元件的TFT32(Thin Film Transistor(薄膜晶体管):显示元件)和像素电极33。如图3所示,多个像素电极33在显示区域A1中排列为矩阵状(行列状)。此外,在图3中示出的像素电极33的个数比实际少。
TFT32与像素电极33相比设置在下层,多个TFT32在显示区域A1中排列为矩阵状(行列状),各TFT32分别连接到各像素电极33。TFT32具有栅极电极34、源极电极35、漏极电极36以及沟道部37。沟道部37以与栅极电极34重叠的形式配置,在沟道部37与栅极电极34之间隔着栅极绝缘膜38。沟道部37以将源极电极35和漏极电极36相连的形式配置。在沟道部37、源极电极35以及漏极电极36的上层,层叠有绝缘膜46和平坦化膜47,像素电极33形成在平坦化膜47上。漏极电极36连接着漏极配线41,漏极配线41经由形成于平坦化膜47的接触孔45和形成于绝缘膜46的接触孔48与像素电极33(透明电极)电连接。平坦化膜47(有机绝缘膜)例如包括丙烯酸树脂(例如PMMA)等有机材料,具有比其它绝缘膜38、46、40大的膜厚。
栅极电极34、源极电极35以及漏极电极36例如包括钛(Ti)和铜(Cu)的层叠膜,但是不限于此。另外,在TFT32和像素电极33的周围,以呈格子状的形式配置有栅极配线和源极配线(未图示)。栅极电极34与栅极配线连接,源极电极35与源极配线连接。TFT32基于从驱动器17分别供应到栅极配线和源极配线的各种信号而被驱动,伴随着其驱动,电位向像素电极33的供应受到控制。
如图2所示,在阵列基板30中,在像素电极33的表侧设置有共用电极39。在像素电极33与共用电极39之间隔着绝缘膜40。栅极绝缘膜38、绝缘膜40、46例如包括二氧化硅(SiO2)和氮化硅(SiNx)的层叠膜,但是不限于此。像素电极33、共用电极39例如包括ITO(Indium Tin Oxide:氧化铟锡)、IZO(Indium Zinc Oxide:氧化铟锌)等透明电极膜,但是不限于此。另外,在共用电极39,例如形成有多个狭缝(未图示)。当伴随着像素电极33被充电而在相互重叠的像素电极33与共用电极39之间产生了电位差时,会在共用电极39的狭缝开口缘与像素电极33之间,产生包含沿着阵列基板30的板面的成分和相对于阵列基板30的板面的法线方向的成分的边缘电场(倾斜电场),因此能利用该边缘电场控制液晶层23所包含的液晶分子的取向状态。也就是说,本实施方式的液晶面板11的动作模式是FFS(FringeField Switching:边缘场开关)模式。
本实施方式的液晶显示装置10是兼有显示图像的显示功能和检测使用者基于显示的图像而输入的位置(输入位置)的触摸面板功能(位置输入功能)的内嵌式的液晶显示装置。本实施方式的触摸面板的检测方式是所谓的投影型静电电容方式,例如为自电容方式。另外,在本实施方式中,为将像素电极33用作位置检测用的电极的构成。当液晶显示装置10的使用者使作为导电体的手指(位置输入体,未图示)靠近液晶面板11的表面(显示面)时,会在该手指与像素电极33之间形成静电电容。由此,由位于手指的附近的像素电极33检测出的静电电容变得与远离手指的像素电极33的静电电容不同,因此能基于此而检测出手指的输入位置。像素电极33连接着配线50(位置检测配线)。配线50例如包括铜(Cu)等金属膜,但是不限于此。另外,配线50也可以是层叠不同种类的导电膜而成的。
配线50从像素电极33朝向驱动器17延伸,并与驱动器17电连接。配线50例如以沿着源极配线延伸的形式配置,但是配线50的布设路径不限于此。在进行检测显示区域A1上的输入位置的控制时,控制电路基板12经由驱动器17和配线50将用于检测输入位置的驱动信号供应到像素电极33,经由驱动器17和配线50接收检测信号。由此,像素电极33作为位置检测电极发挥功能。
接下来,说明液晶面板11的制造方法。液晶面板11是通过分别制造CF基板21和阵列基板30后将CF基板21和阵列基板30贴合而制造的。阵列基板30(显示面板用基板)的制造方法至少具备:栅极用导电膜形成工序,形成栅极电极34和栅极配线;栅极绝缘膜形成工序,形成栅极绝缘膜38;沟道部形成工序,形成沟道部37;源极漏极形成工序,形成源极电极35、源极配线、漏极电极36、漏极配线41;第1绝缘膜形成工序,形成绝缘膜46;平坦化膜形成工序,形成平坦化膜47;形成像素电极33和配线50的各工序(详细后述);第2绝缘膜形成工序,形成绝缘膜40;以及共用电极形成工序,形成共用电极39。
在上述的各工序中,通过光刻法,分别形成薄膜图案。具体地说,上述的各工序具备:成膜工序,形成成为薄膜图案的基础的薄膜;抗蚀剂形成工序,通过对抗蚀剂进行曝光处理和显影处理等而形成与薄膜图案对应的形状的抗蚀剂图案;以及蚀刻工序,通过进行将抗蚀剂图案作为掩模的蚀刻而形成薄膜图案。此外,在成膜工序中,根据薄膜的种类,适当使用等离子体CVD法、溅射法、真空蒸镀法等。另外,在蚀刻工序中,根据要蚀刻的薄膜的种类,适当使用湿式蚀刻、干式蚀刻。在以下的说明中,说明上述各工序中的用于形成像素电极33和配线50的各工序。
像素电极33和配线50是经过透明导电膜形成工序、金属膜形成工序、配线形成工序以及透明电极形成工序形成的。在透明导电膜形成工序中,如图4所示,在覆盖TFT32的平坦化膜47上形成成为像素电极33的基础的透明导电膜51。此外,在该时点,透明导电膜51经由形成于平坦化膜47的接触孔45和形成于绝缘膜46的接触孔48与漏极配线41连接。在透明导电膜形成工序之后进行的金属膜形成工序中,如图4所示,以覆盖透明导电膜51的形式形成成为配线50的基础的金属膜52。
(配线形成工序)
在金属膜形成工序之后进行的配线形成工序中,如图5所示,在金属膜52的上层涂敷抗蚀剂(光致抗蚀剂),将该抗蚀剂经由规定的光掩模进行曝光,之后对被曝光的抗蚀剂进行显影,由此形成被图案化的抗蚀剂53(用于形成配线的抗蚀剂图案)。接下来,将抗蚀剂53作为掩模,对金属膜52进行蚀刻。另外,抗蚀剂53的一部分是以将金属膜52中的覆盖接触孔45的部分覆盖的状态配置。由此,金属膜52中的由抗蚀剂53覆盖的部分未被蚀刻而残存下来,而其中的未由抗蚀剂53覆盖的部分被除去。其结果是,如图6所示,在透明导电膜51上形成配线50。另外,金属膜52的一部分成为在接触孔45的形成部位覆盖透明导电膜51的盖部54。
(透明电极形成工序)
在配线形成工序之后进行的透明电极形成工序中,如图7所示,在透明导电膜51、配线50以及盖部54的上层侧涂敷抗蚀剂(光致抗蚀剂),将该抗蚀剂经由规定的光掩模进行曝光,之后对被曝光的抗蚀剂进行显影,由此形成图案化的抗蚀剂55(像素电极形成用的抗蚀剂图案)。接下来,将抗蚀剂55作为掩模,对透明导电膜51进行蚀刻。由此,透明导电膜51中的由抗蚀剂55覆盖的部分未被蚀刻而残存下来,而其中的未由抗蚀剂55覆盖的部分被除去。由此,如图2所示,在平坦化膜47上以与配线50连接的状态形成像素电极33(透明电极)。然后,在透明电极形成工序之后进行的第2绝缘膜形成工序(绝缘膜形成工序)中,以覆盖像素电极33和配线50的形式形成绝缘膜40,在第2绝缘膜形成工序之后进行的共用电极形成工序中,在绝缘膜40上形成共用电极39。
接着,说明本实施方式的效果。如果设为按平坦化膜47、配线50、像素电极33(透明电极的一例)的顺序进行层叠的构成,则在配线50的形成部位,像素电极33会以越过配线50的形式配置,产生配线50的厚度的量的台阶。其结果是,像素电极33有可能在台阶部部分地间断。通过如上述方法那样按平坦化膜47、像素电极33、配线50的顺序进行层叠,能抑制在像素电极33产生台阶,能更可靠地抑制像素电极33部分地间断的情况。
另外,在上述方法中,通过使包括透明导电膜的像素电极33介于配线50(金属膜52)与平坦化膜47之间,从而与在平坦化膜47上直接形成配线50的情况相比,能提高配线50的紧贴性。如果按平坦化膜47、透明导电膜、配线50、像素电极33的顺序进行层叠,则需要分别具备在配线50与平坦化膜47之间形成透明导电膜的工序和形成用于构成像素电极33的透明电极膜的工序。与之相比,在上述方法中,由于按平坦化膜47、像素电极33、配线50的顺序进行层叠,因此能进一步减少形成透明电极膜的工序。另外,在本实施方式中,配线50与像素电极33直接接触,因此不需要为了将配线50和像素电极33电连接而形成接触孔。
图8示出比较例。图8是在平坦化膜47上按透明电极膜2、配线3、共用电极4、绝缘膜40、像素电极5的顺序进行层叠的结构。在该构成中,分别需要在配线3与平坦化膜47之间形成透明电极膜2的工序和在配线3的上层形成透明电极(在图8中为共用电极4)的工序。在本实施方式中,由于按平坦化膜47、透明电极(在本实施方式中为像素电极33)、配线50的顺序进行层叠,因此与图8的比较例相比,能进一步减少形成透明电极膜的工序。
另外,在图8的比较例的层叠结构中,平坦化膜47上的透明电极膜2和配线3以大致相同的形状形成。在通过蚀刻形成透明电极膜2和配线3时,如图9所示,有可能透明电极膜2成为倒锥状。当成为倒锥状时,如图9所示,配线3上的透明电极(在图9中为共用电极4)有可能部分地断线。在本实施方式中,由于按透明电极(像素电极33)、配线50的顺序进行层叠,因此能抑制透明电极发生断线的情况。此外,作为透明电极膜2成为倒锥状的原因,考虑是由于透明电极膜2的蚀刻速率比配线3的蚀刻速率快。
另外,在本实施方式中,例示像素电极33作为与配线50连接的透明电极。这样,通过连接到像素电极33的配线50,能对像素电极33输入与从漏极电极36输入的信号不同的信号。由此,能使像素电极33兼用于图像显示以外的功能(例如触摸传感器的功能)。
另外,在配线形成工序中,在由抗蚀剂53将金属膜52中的覆盖接触孔45的部分覆盖的状态下对金属膜52进行蚀刻。在像素电极33中,能由盖部54(金属膜52的一部分)覆盖其与漏极电极36连接的连接部分,能实现连接部分的低电阻化和对连接部分的保护。
另外,具备:绝缘膜形成工序,在透明电极形成工序之后进行,以覆盖像素电极33(透明电极)和配线50的形式形成绝缘膜40;以及共用电极形成工序,在绝缘膜形成工序之后进行,在绝缘膜40上形成共用电极39。如果按TFT32、平坦化膜47、共用电极39、绝缘膜40、像素电极33的顺序进行层叠,则为了将像素电极33和TFT32连接,需要在平坦化膜47和绝缘膜40均形成接触孔。在本实施方式中,按TFT32、平坦化膜47、像素电极33、绝缘膜40、共用电极39的顺序进行层叠,因此通过仅在平坦化膜47形成接触孔45,就能将像素电极33和TFT32连接。
另外,在本实施方式中,在形成成为像素电极33的基础的透明导电膜51和成为配线50的基础的金属膜52后,通过对金属膜52进行蚀刻而形成配线50,通过对透明导电膜51进行蚀刻而形成像素电极33。这样,与在形成像素电极33后形成配线50的顺序相比,像素电极33和配线50的紧贴性进一步提高。
<实施方式2>
接下来,根据图10说明本发明的实施方式2。对与上述实施方式相同的部分标注同一附图标记而省略重复的说明。在上述实施方式中,例示了像素电极作为与配线连接的透明电极。与此相对,在本实施方式的阵列基板130中,例示共用电极作为与配线连接的透明电极。在阵列基板130中,如图10所示,在平坦化膜47上按共用电极139、配线150、绝缘膜140、像素电极133的顺序将它们进行层叠。共用电极139(透明电极)是由在显示区域A1中排列为矩阵状的多个位置检测电极分割构成的。配线150设置有多条,各配线150分别连接到各位置检测电极。控制电路基板12经由驱动器17和配线150将用于检测输入位置的驱动信号分别供应到多个位置检测电极,并经由配线150接收检测信号。由此,共用电极139成为作为位置检测电极发挥功能的构成。
<其它实施方式>
本发明不限于根据上述记述和附图说明的实施方式,例如如下实施方式也包含于本发明的技术范围中。
(1)在上述实施方式中,例示了液晶面板作为显示面板,但是在其它种类的显示面板中也能应用本技术。
(2)在上述实施方式中,使用TFT作为开关元件,但是也可以使用TFT以外的开关元件(例如薄膜二极管(TFD))。

Claims (4)

1.一种显示面板用基板的制造方法,其特征在于,具备:
透明导电膜形成工序,在覆盖设置于基板的开关元件的平坦化膜上形成透明导电膜;
金属膜形成工序,在上述透明导电膜形成工序之后进行,以覆盖上述透明导电膜的形式形成金属膜;
配线形成工序,在上述金属膜形成工序之后进行,通过对上述金属膜进行蚀刻而形成配线;以及
透明电极形成工序,在上述配线形成工序之后进行,通过对上述透明导电膜进行蚀刻而形成与上述配线连接的透明电极。
2.根据权利要求1所述的显示面板用基板的制造方法,
上述透明电极是通过形成于上述平坦化膜的接触孔与上述开关元件所具备的漏极电极连接的像素电极。
3.根据权利要求2所述的显示面板用基板的制造方法,
在上述配线形成工序中,
在由抗蚀剂将上述金属膜中的覆盖上述接触孔的部分覆盖的状态下对上述金属膜进行蚀刻。
4.根据权利要求2或权利要求3所述的显示面板用基板的制造方法,具备:
绝缘膜形成工序,在上述透明电极形成工序之后进行,以覆盖上述透明电极和上述配线的形式形成绝缘膜;以及
共用电极形成工序,在上述绝缘膜形成工序之后进行,在上述绝缘膜上形成共用电极。
CN201811197186.9A 2017-10-18 2018-10-15 显示面板用基板的制造方法 Pending CN109683408A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-201799 2017-10-18
JP2017201799A JP2019074684A (ja) 2017-10-18 2017-10-18 表示パネル用基板の製造方法

Publications (1)

Publication Number Publication Date
CN109683408A true CN109683408A (zh) 2019-04-26

Family

ID=66095820

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811197186.9A Pending CN109683408A (zh) 2017-10-18 2018-10-15 显示面板用基板的制造方法

Country Status (3)

Country Link
US (1) US10620468B2 (zh)
JP (1) JP2019074684A (zh)
CN (1) CN109683408A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102109722A (zh) * 2009-12-28 2011-06-29 乐金显示有限公司 液晶显示器及其制造方法
CN105793772A (zh) * 2013-11-21 2016-07-20 夏普株式会社 显示装置
CN106886110A (zh) * 2015-12-07 2017-06-23 乐金显示有限公司 显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8149346B2 (en) 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5105811B2 (ja) * 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
US7821613B2 (en) 2005-12-28 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2007199708A (ja) * 2005-12-28 2007-08-09 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
EP1843194A1 (en) 2006-04-06 2007-10-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
JP5148912B2 (ja) * 2006-04-06 2013-02-20 株式会社半導体エネルギー研究所 液晶表示装置及び半導体装置、並びに電子機器
JP5106991B2 (ja) * 2007-11-07 2012-12-26 株式会社ジャパンディスプレイウェスト 液晶装置および電子機器
KR20130032743A (ko) 2011-09-23 2013-04-02 삼성디스플레이 주식회사 액정 표시 장치
KR20150041792A (ko) * 2012-09-21 2015-04-17 샤프 가부시키가이샤 액정 디스플레이
EP2905769A4 (en) * 2012-10-02 2015-10-07 Sharp Kk SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
EP2905768A4 (en) * 2012-10-02 2015-10-14 Sharp Kk SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
US20150277168A1 (en) * 2012-11-21 2015-10-01 Sharp Kabushiki Kaisha Display device
US9690155B2 (en) 2014-04-16 2017-06-27 Sharp Kabushiki Kaisha Liquid crystal display panel and method for producing same
JP6482256B2 (ja) * 2014-12-02 2019-03-13 三菱電機株式会社 薄膜トランジスタ基板および液晶表示装置
KR101727108B1 (ko) 2014-12-31 2017-04-17 엘지디스플레이 주식회사 인셀 터치 액정 디스플레이 장치와 이의 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102109722A (zh) * 2009-12-28 2011-06-29 乐金显示有限公司 液晶显示器及其制造方法
CN105793772A (zh) * 2013-11-21 2016-07-20 夏普株式会社 显示装置
CN106886110A (zh) * 2015-12-07 2017-06-23 乐金显示有限公司 显示装置

Also Published As

Publication number Publication date
JP2019074684A (ja) 2019-05-16
US10620468B2 (en) 2020-04-14
US20190113789A1 (en) 2019-04-18

Similar Documents

Publication Publication Date Title
US11714309B2 (en) Display device
KR102559090B1 (ko) 인셀형 터치 패널을 갖는 백플레인 기판
US9678400B2 (en) Array substrate for liquid crystal display and manufacturing method thereof
US8284171B2 (en) Liquid crystal display device with input function
CN107077261A (zh) 触摸面板、触摸面板的制造方法以及触摸面板集成型有机发光显示装置
CN109839779A (zh) 液晶面板
KR20040086925A (ko) 수평 전계 인가형 액정 표시 장치 및 그 제조 방법
US20190056818A1 (en) Touch substrate, method for manufacturing the same, and touch display device
US10684713B2 (en) Display device and manufacturing method of the same
KR20100022797A (ko) 액정 표시 장치 및 그의 제조 방법
US20220367530A1 (en) Array substrate and method for manufacturing the same, and display apparatus
US20140306216A1 (en) Thin film transistor array panel and manufacturing method thereof
US20200348784A1 (en) Touch display substrate, method of manufacturing the same and display device
KR102081598B1 (ko) 네로우 베젤 타입 액정표시장치용 어레이 기판 및 이의 제조방법
CN106575063B (zh) 有源矩阵基板、液晶面板以及有源矩阵基板的制造方法
CN109427661A (zh) 带对准标记的基板的制造方法
CN103534643B (zh) 液晶显示装置以及其制造方法
KR20100067236A (ko) 터치 패널, 이의 제조 방법 및 이를 이용한 액정 표시 장치
US20140035839A1 (en) Display Device Integrated with Touch Screen Panel
KR20150058629A (ko) 터치 스크린이 내장된 액정표시장치
KR20160025643A (ko) 디스플레이 장치 및 그 제조방법
CN109839773A (zh) 液晶面板
KR20040086927A (ko) 수평 전계 인가형 박막 트랜지스터 어레이 기판 및 그제조 방법
CN109683408A (zh) 显示面板用基板的制造方法
CN110383160A (zh) 液晶显示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination