CN109671727B - Infrared focal plane array - Google Patents

Infrared focal plane array Download PDF

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CN109671727B
CN109671727B CN201710970347.2A CN201710970347A CN109671727B CN 109671727 B CN109671727 B CN 109671727B CN 201710970347 A CN201710970347 A CN 201710970347A CN 109671727 B CN109671727 B CN 109671727B
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focal plane
guide electrode
plane array
epitaxial wafer
passivation
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CN109671727A (en
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金迎春
高健飞
黄立
刘斌
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Wuhan Guide Infrared Co Ltd
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Wuhan Guide Infrared Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
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Abstract

The invention discloses an infrared focal plane array, which comprises an epitaxial wafer covered with a passivation film, wherein the surface of the epitaxial wafer is provided with a plurality of sunken doped regions, a plurality of common electrodes are distributed on the periphery of the surface of the epitaxial wafer, and the passivation film is provided with a plurality of contact holes and a plurality of convex point holes corresponding to the plurality of sunken doped regions; the passivation film consists of a first passivation region and a second passivation region in the horizontal direction, and the second passivation region is a circular ring concentric with the convex point hole; the surface of the first passivation area is covered with a first guide electrode, and a second guide electrode communicated with the first guide electrode is filled in the contact hole; the first guide electrode and the second guide electrode are both made of metal conductive materials. The invention aims to solve the technical problem of uneven focal plane array pictures caused by different power supply voltages of pixels at the edge of an infrared focal plane array and a middle pixel.

Description

Infrared focal plane array
Technical Field
The invention belongs to the technical field of photoelectricity, and particularly relates to an infrared focal plane array.
Background
The infrared detector is a photosensor capable of responding to external infrared radiation, and a two-dimensional array formed by a plurality of infrared detector units is called an infrared focal plane array and is the core of the infrared detector. The infrared detector can be divided into a photon detector and a thermal detector according to the working mechanism, the photon detector can directly convert optical signals into electric signals after receiving infrared radiation, and the photon detector has the characteristics of high sensitivity, high response speed, higher response frequency, generally working at low temperature and narrower detection wave band.
With the development of the infrared focal plane array technology, the area of the focal plane array is larger and larger, and the pixels of the focal plane array are smaller and denser. For large focal plane arrays, the picture uniformity of the entire focal plane array affects the performance of the focal plane detection device, and the picture uniformity of the focal plane array is related to the supply voltage of each pixel element on the focal plane array. On the focal plane array, the voltage of each pixel is transmitted and loaded to the pixel at the edge of the focal plane array through the epitaxial wafer through the public electrode at the edge, the material in the epitaxial wafer is a semiconductor, the resistance is large, the potential of the voltage is reduced in the process of transmitting from the edge to the pixel, and the potential reduction degree is in direct proportion to the length of the epitaxial wafer in the way, so that the power supply voltage of the pixel at the edge of the focal plane array is different from that of the middle pixel, the opening condition of a pn junction is also inconsistent, and the final focal plane array picture is not uniform.
The existing process is generally improved by two methods of increasing the thickness of an epitaxial slice material or increasing the carrier concentration of the material, but the increase of the thickness of the epitaxial slice material can reduce the external quantum efficiency, and a thicker material can generate larger stress, so that a focal plane array is easy to crack; this method of increasing the carrier concentration is difficult to implement and increases the electrical noise of the focal plane array.
Disclosure of Invention
In view of the above defects or improvement requirements of the prior art, the present invention provides an infrared focal plane array, which aims to solve the technical problem of uneven focal plane array pictures caused by different power supply voltages of pixels at the edge of the infrared focal plane array and intermediate pixels.
To achieve the above object, according to one aspect of the present invention, there is provided an infrared focal plane array comprising an epitaxial wafer covered with a passivation film, the surface of the epitaxial wafer being provided with a plurality of recessed doped regions, the periphery of the surface of the epitaxial wafer being distributed with a plurality of common electrodes, wherein,
the passivation film is provided with a plurality of contact holes and a plurality of convex point holes corresponding to the plurality of sunken doped regions;
the passivation film consists of a first passivation area and a second passivation area in the horizontal direction, and the second passivation area is a circular ring concentric with the convex point hole;
the surface of the first passivation area is covered with a first guide electrode, and a second guide electrode communicated with the first guide electrode is filled in the contact hole; the first guide electrode and the second guide electrode are both made of metal conducting materials.
Preferably, a plurality of salient point holes are distributed in a matrix form, and a contact hole is equidistantly arranged between four adjacent salient point holes.
Preferably, the size of the bump hole is smaller than or equal to the size of the doped region.
Preferably, the metal conductive material is an alloy formed by any one or more of Au, Pt, Cu, Cr, Ti, Al, W, Sn and Au.
Preferably, the thicknesses of the first guide electrode and the second guide electrode are both 5 nm-100 nm.
Preferably, the first guide electrode and the second guide electrode are both of a double-layer structure, and the lower layer of the double-layer structure is made of Sn; the upper layer of the double-layer structure is made of Au.
In general, compared with the prior art, the above technical solution conceived by the present invention can achieve the following beneficial effects due to the proposed infrared focal plane array:
(1) the invention provides an infrared focal plane array, which comprises an epitaxial wafer covered with a passivation film, wherein the passivation film is provided with a plurality of contact holes and a plurality of convex point holes corresponding to the positions of a plurality of doped regions; the passivation film consists of a first passivation region and a second passivation region, and the second passivation region is a circular ring concentric with the convex point hole; the surface of the first passivation area is covered with a first guide electrode; the contact hole is filled with a second flow guide electrode. The first guide electrodes are separated from the epitaxial wafer through the passivation film of the first passivation area, and the first guide electrodes are distributed on the whole focal plane array and are connected into a whole; and the first guide electrode distributed at the edge of the focal plane array can connect the guide electrode with the common electrode at the periphery of the surface of the epitaxial wafer, so that the common electrical end (common electrode) of all the pixels is electrically connected, and current can be transmitted to the epitaxial wafer around the pixels at the edge of the focal plane array from the common electrode through the first guide electrode. And the epitaxial wafers near all the doped regions are electrically communicated with the guide electrodes through the second guide electrodes arranged in the contact holes.
(2) Because the convex point holes of the infrared focal plane array are distributed in a matrix form, and the contact holes are arranged between the adjacent four convex point holes at equal intervals, the power supply of each pixel close to the center of the focal plane flows into the epitaxial wafer around the pixel from the flow guide electrodes in the four contact holes at the periphery.
(3) The guide electrode is made of metal materials and is distributed in the whole focal plane array, and the resistivity of the metal materials is almost negligible compared with that of materials of the epitaxial wafer. In the invention, the distribution of the guide electrodes and the tiny resistance thereof finally cause the path of the current flowing into the common electrode to mainly flow from the guide electrode with small resistance to the pixel rather than directly flowing from the epitaxial wafer with large resistance to the pixel, thereby realizing zero voltage drop on the path of the current from the common electrode to the pixel, and consequently, each pixel has the same potential, and pn of each pixel has the same starting voltage, so that the pixels have the same starting and working states, the electrical distribution of the focal plane array is more uniform, and finally the picture is more uniform on the imaging effect.
(4) The guide electrode can be prepared by only one-time photoetching, one-time coating and one-time stripping processes, so the process flow is simple and the operation is easy.
Drawings
FIG. 1 is a schematic diagram of the structure of an infrared focal plane array of the present invention;
FIG. 2 is a schematic cross-sectional view of FIG. 1;
FIG. 3 is a schematic plan view of a flow-directing electrode structure;
FIG. 4 is a current flow pattern in a prior art mid-IR focal plane array;
FIG. 5 is a current flow pattern in an improved infrared focal plane array of the present invention;
FIG. 6 is a schematic diagram of the connection between the infrared focal plane array and the indium bump according to the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
1-an epitaxial wafer; 2-a doped region; 3-a common electrode; 4-a passivation film; 5-a flow guide electrode; 6, contact holes are formed; 7-bump holes; 8-indium bumps; 9-picture element.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
It should be noted that in the description of the present invention, the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience of description and simplification of description, and do not indicate or imply that the referred device or element must have a specific orientation, be configured in a specific orientation, and operate, and thus, should not be construed as limiting the present invention.
As shown in fig. 1, the present invention provides an infrared focal plane array, which includes an epitaxial wafer 1 covered with a passivation film 4, wherein a plurality of recessed doped regions 2 are disposed on the surface of the epitaxial wafer 1. The epitaxial wafer 1 is a semiconductor material and has a large resistance; the doped region 2 is formed by ion implantation, the polarity of the doped region is opposite to that of the current carrier in the epitaxial wafer 1, the thickness of the doped region is smaller than that of the epitaxial wafer 1, and a pn junction is formed between the doped region 2 and the intrinsic region of the epitaxial wafer 1; the passivation film 4 is in direct contact with the epitaxial wafer 1, and generally covers the entire surface of the epitaxial wafer 1 to protect the epitaxial wafer 1. The material of the passivation film 4 is required to be capable of neutralizing dangling bonds on the surface of the epitaxial wafer 1 material and protecting the epitaxial wafer 1 material from reacting with various gases and solvents to generate surface charges, so that dark current is large. The material of the passivation film 4 may be one or more of CdTe, ZnS, S.
A plurality of common electrodes 3 are distributed on the periphery of the surface of the epitaxial wafer 1. The current of the whole focal plane array flows from the common electrode 3 around, and the current is transmitted to the position of the doped region 2 through the epitaxial wafer 1 after the current flows from the common electrode 3 in the prior art, as shown in fig. 4.
The passivation film 4 is provided with a plurality of contact holes 6 and a plurality of convex point holes 7 corresponding to the plurality of sunken doped regions 2; the bump hole 7 is used for placing an indium bump 8 connected to the readout circuitry, as shown in fig. 6. The contact hole 6 serves to electrically contact the second guide electrode to the epitaxial wafer 1.
The passivation film 4 consists of a first passivation region and a second passivation region in the horizontal direction, and the second passivation region is a circular ring concentric with the bump hole 7; the surface of the first passivation area is covered with a first guide electrode; a second guide electrode communicated with the first guide electrode is filled in the contact hole 6; the first guide electrode and the second guide electrode are made of metal conductive materials. The first passivation region is provided to prevent short circuit caused by electrical contact between the indium bump 8 and the second guide electrode in the adjacent contact hole 6 when the indium bump 8 is finally provided at the bump hole 7. Fig. 3 is a schematic plan view of the structure of the guide electrode, in which the circular hole is the outer ring of the second passivation film.
The first guide electrode and the second guide electrode are collectively referred to as a guide electrode 5, and as shown in fig. 1, the center points of the four contact holes 6 are connected to form a pixel 9.
Because the passivation film consists of the first passivation area and the second passivation area, the first guide electrode is separated from the epitaxial wafer 1 through the passivation film 4 of the first passivation area, and the first guide electrode is distributed on the whole infrared focal plane array and connected into a whole; furthermore, the first current-guiding electrode distributed at the edge of the focal plane array can connect the current-guiding electrode 5 with the common electrode 3 at the periphery of the surface of the epitaxial wafer 1, so that the common electrical terminals (common electrodes 3) of all the pixels 9 are electrically connected, and thus current can be transmitted from the common electrode 3 to the epitaxial wafer 1 around the pixels 9 at the edge of the infrared focal plane array via the first current-guiding electrode, as shown in fig. 5. The epitaxial wafers 1 near all the doping regions 2 are electrically communicated with the guide electrodes 5 through the second guide electrodes arranged in the contact holes 6, namely, the whole infrared focal plane is ensured to be electrically communicated.
A plurality of salient point holes 7 are distributed in a matrix form, contact holes 6 are arranged between four adjacent salient point holes 7 at equal intervals, each salient point hole 7 is surrounded by four contact holes 6, a pixel 9 is formed by the center points of the four contact holes 6, namely each pixel 9 is surrounded by four contact holes 6, and therefore power supply of each pixel 9 close to the center of the infrared focal plane array flows into the epitaxial wafer 1 around the pixel 9 through second guide electrodes in the four contact holes 6 around and then flows into the doping area 2 (the pixel 9).
Fig. 2 is a schematic cross-sectional view of fig. 1 through the center of a pixel and along a 45 ° direction. In the figure, the size of the bump hole 7 is smaller than or equal to the size of the doped region 2, which is to ensure that when the indium bump 8 is finally connected at the bump hole 7, the indium bump 8 is not contacted with the epitaxial wafer 1 to cause short circuit, and the schematic connection diagram of the infrared focal plane array and the indium bump of the present invention is shown in fig. 6.
The metal conductive material is an alloy formed by any one or more of Au, Pt, Cu, Cr, Ti, Al, W, Sn and Au, and the resistivity of the metal conductive material is almost negligible compared with the HgCdTe material of the epitaxial wafer 1. And because the metal conductive materials of the first guide electrode and the second guide electrode are also electrically communicated, the path of the current flowing into the common electrode 3 is mainly from the guide electrode 5 with low resistance to the picture element 9, and is not directly from the epitaxial wafer 1 with high resistance to the picture element 9, so that each picture element 9 has the same potential, and the pn junction of each picture element has the same turn-on voltage, as shown in fig. 5.
The thicknesses of the first guide electrode and the second guide electrode are both 5 nm-100 nm, and if the thickness of the guide electrode 5 is large, although lower resistance can be ensured, the cost is high; if the thickness of the guide electrode 5 is thin, the resistance is large, and the distribution requirement of the power supply voltage cannot be met.
The first guide electrode and the second guide electrode are both of a double-layer structure, and the lower layer of the double-layer structure is made of Sn, so that Sn can be well adhered to the passivation film 4 due to good adhesion and thermal stability; the lower layer of the double-layer structure is made of Au, and the Au has good conductivity, so that the voltage distribution of the infrared focal plane array is more uniform.
The invention is further described with reference to the accompanying drawings.
Example (b):
the invention will be further illustrated below by taking as an example an infrared focal plane array of HgCdTe material (material of epitaxial wafer) with pixels at 800 × 600 and pixel distances at 15 μm.
In the traditional process, the current of each pixel is input by a common electrode positioned at the edge of the array and then is transmitted to the pixel through the HgCdTe epitaxial wafer semiconductor material. The thickness of the epitaxial wafer material is 10-20 μm, the resistance from the edge of the infrared focal plane array to the center of the focal plane array is more than hundreds of ohms, and after the common electrode is electrified, the working voltage of the pixel in the central area of the array is lower than that of the pixel at the edge by more than 0.12V. Because the picture element has a pn junction structure electrically, the working state of the picture element is different under different working voltages. This results in all pixels in the array not being in one and the same operating state, and ultimately the electrical uniformity of the entire infrared focal plane array is poor.
In this example, the problem of poor electrical uniformity described above can be solved by adding a metal guide electrode 5. The preparation process of the guide electrode 5 is simple: firstly, transferring a designed pattern of the guide electrode 5 shown in figure 3 onto an array through a photoetching process, and then depositing a SnAu multilayer film by adopting a film coating process, wherein the thicknesses of Sn and Au are respectively 20nm and 50nm, Sn is easy to adhere, the thermal stability is good, and Au conductivity is good. And then, putting the sample into an acetone solution for soaking, and stripping off redundant metal to leave a structure of the flow guide electrode 5. For the 15 μm pixel distance array of this embodiment, i.e., the size of the pixel 9 is 15 μm, the diameter of the doped region 2 is 8 μm, and the outer ring diameter of the second passivation film is 10 μm to 12 μm. As described above, this is because the diameter of the doped region 2 is smaller than the outer diameter of the second passivation film in order to avoid short-circuiting of the indium bump 8 with the epitaxial wafer 1, and it can be seen from fig. 1 that the size of the pixel 9 is larger than the outer diameter of the second passivation film.
On the other hand, the guide electrode 5 is in direct electrical contact with the common electrode 3 at the edge of the focal plane array, and is in material contact with the epitaxial wafer 1 through the contact hole 6 formed in the passivation film 4.
Just because of the low resistance metal current-conducting electrode 5, more current will pass through the low resistance path in two parallel paths, and the voltage loss is minimal. Thus, the current path of the diode of each picture element 9 of the array will change from fig. 4 to fig. 5, i.e.: the circuit can be conducted to the pixel area through the guide electrode 5 with small resistance instead of the epitaxial wafer 1 with large resistance after flowing into the common electrode 3 positioned at the edge of the area array, so that the problem of voltage loss when passing through the epitaxial wafer 1 is avoided, and the pixels 9 in the central area of the array and the pixels 9 at the edge of the array, which are close to the common electrode 3, have the same voltage, thereby ensuring that the pixel pn junctions have the same starting state and improving the imaging uniformity of the focal plane array.
Theoretical calculation shows that the resistance of the guide electrode from the edge of the array to the center of the array is less than 0.1 ohm in this example, while the resistance of the HgCdTe epitaxial material with the same length is between 1000-100000 ohm, which shows that the resistance of the guide electrode is negligible compared with the resistance of the epitaxial material, so that the potential of each position of the guide electrode is almost the same, and thus each pixel has the same working voltage, the working states are completely the same, and the electrical uniformity of the whole array is better.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (6)

1. An infrared focal plane array comprises an epitaxial wafer (1) covered with a passivation film (4), wherein the surface of the epitaxial wafer (1) is provided with a plurality of sunken doped regions (2), a plurality of common electrodes (3) are distributed on the periphery of the surface of the epitaxial wafer (1),
the passivation film (4) is provided with a plurality of contact holes (6) and a plurality of convex point holes (7) corresponding to the plurality of sunken doping regions (2);
the passivation film (4) consists of a first passivation area and a second passivation area in the horizontal direction, and the second passivation area is a circular ring concentric with the convex point hole (7);
a first guide electrode covers the surface of the first passivation area, and a second guide electrode communicated with the first guide electrode is filled in the contact hole (6); the first guide electrode and the second guide electrode are both made of metal conducting materials.
2. The infrared focal plane array according to claim 1, wherein the plurality of bump holes (7) are arranged in a matrix, and one contact hole (6) is arranged between four adjacent bump holes (7) at equal distance.
3. The infrared focal plane array of claim 1, wherein the size of the bump apertures (7) is less than or equal to the size of the doped regions (2).
4. The infrared focal plane array of claim 1, wherein the metal conductive material is an alloy of any one or more of Au, Pt, Cu, Cr, Ti, Al, W, Sn, and Au.
5. The infrared focal plane array of claim 1, wherein the first guide electrode and the second guide electrode are both 5nm to 100nm thick.
6. The infrared focal plane array of claim 1, wherein the first guide electrode and the second guide electrode are both of a double-layer structure, and a lower layer material of the double-layer structure is Sn; the upper layer of the double-layer structure is made of Au.
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CN112086524A (en) * 2020-08-28 2020-12-15 北京智创芯源科技有限公司 Infrared detection device and preparation method

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH0832101A (en) * 1994-07-15 1996-02-02 Toshiba Corp Hgcdte semiconductor device and its manufacture
CN101527308A (en) * 2009-04-10 2009-09-09 中国科学院上海技术物理研究所 Plane-structure InGaAs array infrared detector
CN102798471A (en) * 2011-10-19 2012-11-28 清华大学 Infrared detector and preparation method thereof
CN104201237A (en) * 2014-08-22 2014-12-10 中国电子科技集团公司第十一研究所 Multi-element infrared detector table device and manufacturing method thereof
CN106876418A (en) * 2017-03-14 2017-06-20 北京邮电大学 A kind of photodetector array

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832101A (en) * 1994-07-15 1996-02-02 Toshiba Corp Hgcdte semiconductor device and its manufacture
CN101527308A (en) * 2009-04-10 2009-09-09 中国科学院上海技术物理研究所 Plane-structure InGaAs array infrared detector
CN102798471A (en) * 2011-10-19 2012-11-28 清华大学 Infrared detector and preparation method thereof
CN104201237A (en) * 2014-08-22 2014-12-10 中国电子科技集团公司第十一研究所 Multi-element infrared detector table device and manufacturing method thereof
CN106876418A (en) * 2017-03-14 2017-06-20 北京邮电大学 A kind of photodetector array

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