CN109637808A - A kind of novel capacitor and device - Google Patents
A kind of novel capacitor and device Download PDFInfo
- Publication number
- CN109637808A CN109637808A CN201910027582.5A CN201910027582A CN109637808A CN 109637808 A CN109637808 A CN 109637808A CN 201910027582 A CN201910027582 A CN 201910027582A CN 109637808 A CN109637808 A CN 109637808A
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- CN
- China
- Prior art keywords
- pole plate
- capacitor
- layer
- layers
- novel capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 title claims abstract description 37
- 238000005538 encapsulation Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/22—Electrostatic or magnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/10—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/20—Arrangements for preventing discharge from edges of electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The present invention discloses a kind of novel capacitor and device, it is related to circuit design and device arts, including two layers of pole plate, the dielectric layer being set between two layers of pole plate and the through-hole structure for connecting wherein one layer of pole plate, the edge that the through-hole structure is set to connected pole plate surrounds shield dielectric layer and another layer of pole plate；The increased through-hole in pole plate edge of the present invention and a pole plate are connected, dielectric layer is enclosed in centre, the edge of battery is limited and is controlled, so that capacitor is electromagnetic-field-shielded more preferable, the certain performances, such as consistency, anti-interference etc. for improving capacitor element, improve the Q value of capacitor, Insertion Loss is reduced, the efficiency of integrated circuit is improved.
Description
Technical field
The present invention relates to circuit design and device arts more particularly to a kind of novel capacitors and device.
Background technique
Capacitor is widely used in modern circuit system as basic electronic component, including integrated circuit/
The fields such as MEMS/PCB.The structure design of capacitor has direct association to the performance of capacitor, is to determine capacitive property parameter
An important factor for.
As depicted in figs. 1 and 2, traditional capacitor design in pole plate fringe region there are edge effect, while marginal zone
The electric field in domain is not due to having to constrain and shield, direct and extraneous connection.
Summary of the invention
The present invention provides a kind of novel capacitor and device aiming at the problem that background technique, passes through the week in capacitor plate
Increase via hole is enclosed, preferably constraint and shielding is provided to the electric field in capacitor dielectric region, promotes the performance of capacitor.
To achieve the goals above, the present invention proposes a kind of novel capacitor, including two layers of pole plate, is set to two layers of pole plate
Between dielectric layer and connection wherein one layer of pole plate through-hole structure, the through-hole structure is set to the side of connected pole plate
Edge position surrounds shield dielectric layer and another layer of pole plate.
Preferably, the through-hole structure uses 3/4 enclosed through-hole structure.
Preferably, the through-hole structure, multiple via holes including being distributed in pole plate edge.
Preferably, the via hole is completely or partially connected with connected pole plate.
Preferably, the pole plate can be the layer structure in layer structure, encapsulation or the PCB in integrated circuit.
The present invention also proposes a kind of electronic device, including the novel capacitor.
The present invention proposes that a kind of novel capacitor and device, the increased through-hole in pole plate edge and a pole plate are connected, will
Dielectric layer is enclosed in centre, and the edge of battery is limited and controlled, so that capacitor is electromagnetic-field-shielded more preferable, improves capacitor
Certain performances, such as consistency, anti-interference of device etc. improve the Q value of capacitor, reduce Insertion Loss, improve the effect of integrated circuit
Rate.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is traditional capacitor main view；
Fig. 2 is traditional capacitor bottom view；
Fig. 3 is novel capacitor main view in first preferred embodiment of the invention；
Fig. 4 is novel capacitor bottom view in first preferred embodiment of the invention；
Fig. 5 is electronic device construction schematic diagram in second preferred embodiment of the invention；
Label declaration:
M1 is M1 layers of pole plate；M2 is M2 layers of pole plate；D1 is dielectric layer；K1 is through-hole structure；
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that if relating to directionality instruction (such as up, down, left, right, before and after ...) in the embodiment of the present invention,
Then directionality instruction be only used for explain under a certain particular pose (as shown in the picture) between each component relative positional relationship,
Motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present invention
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution
Conjunction is not present, also not the present invention claims protection scope within.
The present invention proposes a kind of novel capacitor；
In first preferred embodiment of the invention, as shown in Figure 3 and Figure 4, including two layers pole plate M1 and M2, it is set to two layers of pole
Dielectric layer D1 between plate is set to pole plate M1 with the through-hole structure K1, the through-hole structure K1 for connecting wherein one layer of pole plate
Edge surround shield dielectric layer D1 and pole plate M2；The through-hole structure K1 includes be distributed in pole plate edge multiple
Via hole；
In first preferred embodiment of the invention, the through-hole structure K1 uses 3/4 enclosed through-hole structure；Via hole can be with
It is connected with M1 layers of pole plate conducting or part with M1 layers of pole plate, it is adjustable.
It is intended to be noted here that be shown by taking pole plate M1 as an example in the present embodiment, it certainly can also be by through-hole structure K1
It is set to encirclement shield dielectric layer D1 and pole plate M1 on pole plate M2；
Pole plate of the present invention can be layer structure, encapsulation or the layer structure in PCB and other in integrated circuit
Meaning Space Coupling structure；
The present invention also proposes a kind of electronic device, as shown in figure 5, including the novel capacitor, with traditional capacitor
Structure is not processed difference to fringe region, places the through-hole of M1 or M2 layers of connection, and pass through M1 or M2 layers and capacitor plate phase
Connection.
Dielectric between D1 layers of condenser armature is surrounded shielding by multiple via holes between two layers by the present invention, changes biography
Better capacitance characteristic control, packet may be implemented the shortcomings that the edge in these regions is not constrained and shielded in capacitor design of uniting
The Q value for improving capacitor is included, Insertion Loss etc. is reduced.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in scope of patent protection of the invention.
Claims (6)
1. a kind of novel capacitor, which is characterized in that including two layers of pole plate, the dielectric layer being set between two layers of pole plate and company
The through-hole structure of wherein one layer of pole plate is connect, the edge that the through-hole structure is set to connected pole plate surrounds shielding electricity and is situated between
Matter layer and another layer of pole plate.
2. novel capacitor according to claim 1, which is characterized in that the through-hole structure is logical using 3/4 enclosed
Pore structure.
3. novel capacitor according to claim 1, which is characterized in that the through-hole structure, including it is distributed in pole plate
Multiple via holes at edge.
4. novel capacitor according to claim 3, which is characterized in that the via hole is all or part of with connect pole
Plate conducting.
5. novel capacitor according to claim 1, which is characterized in that the pole plate can be the layer knot in integrated circuit
Layer structure in structure, encapsulation or PCB.
6. a kind of electronic device, which is characterized in that including novel capacitor such as described in any one of claim 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910027582.5A CN109637808B (en) | 2019-01-11 | 2019-01-11 | Novel capacitor and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910027582.5A CN109637808B (en) | 2019-01-11 | 2019-01-11 | Novel capacitor and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109637808A true CN109637808A (en) | 2019-04-16 |
| CN109637808B CN109637808B (en) | 2024-02-23 |
Family
ID=66060665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910027582.5A Active CN109637808B (en) | 2019-01-11 | 2019-01-11 | Novel capacitor and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109637808B (en) |
Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2012485A (en) * | 1978-01-11 | 1979-07-25 | Licentia Gmbh | Improvements in electrical capacitors |
| JPS57206016A (en) * | 1981-06-12 | 1982-12-17 | Tdk Electronics Co Ltd | Chip type composite through condenser |
| US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
| US5907471A (en) * | 1997-12-29 | 1999-05-25 | Motorola, Inc. | Energy storage device with electromagnetic interference shield |
| TW564444B (en) * | 2002-10-25 | 2003-12-01 | Ind Tech Res Inst | Capacitor shielding structure |
| US20030234415A1 (en) * | 2002-06-24 | 2003-12-25 | Hwey-Ching Chien | Scalable three-dimensional fringe capacitor with stacked via |
| JP2004071658A (en) * | 2002-08-01 | 2004-03-04 | Nec Corp | Electronic equipment equipped with chip component and its manufacturing method |
| US6903918B1 (en) * | 2004-04-20 | 2005-06-07 | Texas Instruments Incorporated | Shielded planar capacitor |
| US20050145405A1 (en) * | 2004-01-02 | 2005-07-07 | Chen Chia P. | Electric member having shielding device |
| US20060061935A1 (en) * | 2004-09-20 | 2006-03-23 | Richard Schultz | Fully shielded capacitor cell structure |
| US20060197133A1 (en) * | 2005-03-02 | 2006-09-07 | Samsung Electronics Co., Ltd. | MIM capacitor including ground shield layer |
| US20070108552A1 (en) * | 2005-10-21 | 2007-05-17 | Lixi Wan | Design of low inductance embedded capacitor layer connections |
| US20080290381A1 (en) * | 2007-05-24 | 2008-11-27 | Ray Alan Mentzer | Capacitance noise shielding plane for imager sensor devices |
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| US20130341766A1 (en) * | 2012-06-14 | 2013-12-26 | Robert Bosch Gmbh | Component having through-hole plating, and method for its production |
| US20140049872A1 (en) * | 2012-08-16 | 2014-02-20 | Himax Technologies Limited | Metal-oxide-metal capacitor able to reduce area of capacitor arrays |
| CN103943610A (en) * | 2014-04-16 | 2014-07-23 | 华为技术有限公司 | Electronic component packaging structure and electronic device |
| CN104378912A (en) * | 2014-12-05 | 2015-02-25 | 浪潮集团有限公司 | Design method of PCB (printed circuit board) controllable impedance through holes |
| RU2600731C1 (en) * | 2015-09-30 | 2016-10-27 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Electromagnetic interference suppression filter |
| CN206340453U (en) * | 2016-12-12 | 2017-07-18 | 石家庄麦特达电子科技有限公司 | Two-in-one electric capacity |
| CN107633128A (en) * | 2017-09-15 | 2018-01-26 | 北京华大九天软件有限公司 | The layout and Wiring method of MOM capacitor, MOM capacitor array and MOM capacitor array |
| CN209357620U (en) * | 2019-01-11 | 2019-09-06 | 广西芯百特微电子有限公司 | A kind of novel capacitor and device |
-
2019
- 2019-01-11 CN CN201910027582.5A patent/CN109637808B/en active Active
Patent Citations (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2012485A (en) * | 1978-01-11 | 1979-07-25 | Licentia Gmbh | Improvements in electrical capacitors |
| JPS57206016A (en) * | 1981-06-12 | 1982-12-17 | Tdk Electronics Co Ltd | Chip type composite through condenser |
| US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
| US5907471A (en) * | 1997-12-29 | 1999-05-25 | Motorola, Inc. | Energy storage device with electromagnetic interference shield |
| US20030234415A1 (en) * | 2002-06-24 | 2003-12-25 | Hwey-Ching Chien | Scalable three-dimensional fringe capacitor with stacked via |
| JP2004071658A (en) * | 2002-08-01 | 2004-03-04 | Nec Corp | Electronic equipment equipped with chip component and its manufacturing method |
| US20050248909A1 (en) * | 2002-08-01 | 2005-11-10 | Hideo Kikuchi | Electronic device including chip parts and a method for manufacturing the same |
| TW564444B (en) * | 2002-10-25 | 2003-12-01 | Ind Tech Res Inst | Capacitor shielding structure |
| US20050145405A1 (en) * | 2004-01-02 | 2005-07-07 | Chen Chia P. | Electric member having shielding device |
| US6903918B1 (en) * | 2004-04-20 | 2005-06-07 | Texas Instruments Incorporated | Shielded planar capacitor |
| US20060061935A1 (en) * | 2004-09-20 | 2006-03-23 | Richard Schultz | Fully shielded capacitor cell structure |
| US20060197133A1 (en) * | 2005-03-02 | 2006-09-07 | Samsung Electronics Co., Ltd. | MIM capacitor including ground shield layer |
| US20070108552A1 (en) * | 2005-10-21 | 2007-05-17 | Lixi Wan | Design of low inductance embedded capacitor layer connections |
| US20080290381A1 (en) * | 2007-05-24 | 2008-11-27 | Ray Alan Mentzer | Capacitance noise shielding plane for imager sensor devices |
| CN102116817A (en) * | 2009-12-31 | 2011-07-06 | 德律科技股份有限公司 | Electrical connection defect detection device |
| JP2013026160A (en) * | 2011-07-25 | 2013-02-04 | Alps Electric Co Ltd | Socket for electronic component |
| US20130341766A1 (en) * | 2012-06-14 | 2013-12-26 | Robert Bosch Gmbh | Component having through-hole plating, and method for its production |
| US20140049872A1 (en) * | 2012-08-16 | 2014-02-20 | Himax Technologies Limited | Metal-oxide-metal capacitor able to reduce area of capacitor arrays |
| CN103943610A (en) * | 2014-04-16 | 2014-07-23 | 华为技术有限公司 | Electronic component packaging structure and electronic device |
| CN104378912A (en) * | 2014-12-05 | 2015-02-25 | 浪潮集团有限公司 | Design method of PCB (printed circuit board) controllable impedance through holes |
| RU2600731C1 (en) * | 2015-09-30 | 2016-10-27 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Electromagnetic interference suppression filter |
| CN206340453U (en) * | 2016-12-12 | 2017-07-18 | 石家庄麦特达电子科技有限公司 | Two-in-one electric capacity |
| CN107633128A (en) * | 2017-09-15 | 2018-01-26 | 北京华大九天软件有限公司 | The layout and Wiring method of MOM capacitor, MOM capacitor array and MOM capacitor array |
| CN209357620U (en) * | 2019-01-11 | 2019-09-06 | 广西芯百特微电子有限公司 | A kind of novel capacitor and device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109637808B (en) | 2024-02-23 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No. 6, Huaqing Innovation Park, Huishan District, Wuxi City, Jiangsu Province, 214000 Applicant after: Corebest Microelectronics (Wuxi) Co.,Ltd. Address before: The annex of Yuegui Building, the junction of the two provinces and districts, Wuzhou City, Wuzhou City, Guangxi Zhuang Autonomous Region, 543000 Applicant before: GUANGXI XINBAITE MICROELECTRONICS Co.,Ltd. |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |