CN109633400B

CN109633400B - VDMOS vertical grid field effect transistor performance detection device

Info

Publication number: CN109633400B
Application number: CN201811569791.4A
Authority: CN
Inventors: 梅华斌; 俞林
Original assignee: Wuxi Institute of Technology
Current assignee: Wuxi Snow Cloud Data Technology Co.,Ltd.
Priority date: 2018-12-21
Filing date: 2018-12-21
Publication date: 2020-10-09
Anticipated expiration: 2038-12-21
Also published as: CN109633400A

Abstract

The invention relates to the technical field of transistor detection, in particular to a VDMOS vertical gate field effect transistor performance detection device, which comprises a circuit board and a transistor, wherein the top end of the circuit board is fixedly connected with a baffle, one side of the top end of the baffle is fixedly connected with a horizontally arranged heating wire, the top end of the circuit board is electrically connected with a steel wire, the other end of the steel wire is fixedly connected with a horizontally arranged pressing plate, the top end of the pressing plate is fixedly connected with a vertically arranged spring, and the top end of the spring is fixedly connected with the bottom end of the circuit board. Has huge economic benefit and wide market prospect, and is worth popularizing and using.

Description

VDMOS vertical grid field effect transistor performance detection device

Technical Field

The invention relates to the technical field of transistor detection, in particular to a VDMOS vertical gate field effect transistor performance detection device.

Background

The VDMOS is an ideal power device no matter in switch application or linear application, and is mainly used in motor speed regulation, inverter, UPS, electronic switch, hi-fi stereo, automobile electric appliance, electronic ballast, etc. it features near infinite static input impedance characteristic, very fast switching time, positive temperature coefficient of on-resistance, transconductance of approximate constant and high dV/dt, firstly, an N-type epitaxial layer grows on a heavily doped N + substrate, a channel is formed by the difference of the two lateral diffusion junction depths of a P-type base region and an N + source region, the two regions are implanted with respective doping impurities through a gate self-alignment process in the ion implantation process, therefore, there is an increasing demand for a VDMOS vertical gate field effect transistor performance detection apparatus.

Most VDMOS vertical grid field effect transistor performance detection devices in the existing market cannot test the stability of a transistor in a high-temperature state, cannot detect whether the transistor can normally operate in a bad working environment with poor heat dissipation, and have large difference between experimental parameters and actual used parameters.

Disclosure of Invention

The invention aims to provide a device for detecting the performance of a VDMOS vertical gate field effect transistor, so as to solve the problems in the prior art.

In order to achieve the purpose, the invention provides the following technical scheme:

the VDMOS vertical grid field effect transistor performance detection device comprises a circuit board and a transistor, wherein a baffle is fixedly connected to the top end of the circuit board, a horizontally arranged heating wire is fixedly connected to one side of the top end of the baffle, a steel wire is electrically connected to the top end of the circuit board, a horizontally arranged pressing plate is fixedly connected to the other end of the steel wire, a vertically arranged spring is fixedly connected to the top end of the pressing plate, the top end of the spring is fixedly connected with the bottom end of the circuit board, horizontally arranged pins are electrically connected to the front end of the transistor, bent rods are rotatably connected to the left side and the right side of the top end of the circuit board, a spring piece is fixedly connected to the inner side of each bent rod, the bottom end of the spring piece is fixedly connected with the top end of the circuit board, a horizontally arranged fixed block is fixedly connected to the, the other end of the metal wire is fixedly connected with a pull ring, the right side of the metal wire is fixedly connected with a limiting ring at the top end of the curved rod, and the inner side of the limiting ring is connected with the outer side of the metal wire in a sliding mode.

Preferably, one end surface of the baffle is arranged in an arc surface shape, and the arc surface end of the baffle is connected with the bottom end of the outer side of the transistor in a sliding mode.

Preferably, the outer side of the metal wire is connected with a spring clamp in a sliding mode, and the left end of the spring clamp is attached to the right end of the limiting ring.

Preferably, the axis of the heating wire and the center of the curved bar are located on the same vertical plane, and the heating wire is located right above the transistor.

Preferably, the quantity of steel wire is 3, the length of steel wire is equal, and the steel wire is evenly distributed on the top of clamp plate.

Compared with the prior art, the invention has the beneficial effects that:

1. according to the invention, the stability test of the transistor in a high-temperature state is realized through the arranged electric heating wire, the bent rod and the metal wire, whether the transistor can normally operate in a severe working environment with poor heat dissipation can be detected, and the difference between experimental parameters and actual parameters is shortened.

2. According to the invention, the simple fixing of the pins is realized through the arranged steel wire, the pressing plate and the spring, the bending of the pins is reduced, the breakage is prevented, and the mechanical damage of the transistor in the detection process is avoided.

Drawings

FIG. 1 is a schematic view of the overall structure of the present invention;

fig. 2 is a schematic view of the installation structure of the baffle.

In the figure: 1-circuit board, 2-baffle, 3-electric heating wire, 4-steel wire, 5-pressing plate, 6-spring, 7-pin, 8-transistor, 9-curved bar, 10-spring piece, 11-fixed block, 12-metal wire, 13-pull ring, 14-spacing ring, 15-spring clip.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1-2, the present invention provides a technical solution:

the VDMOS vertical grid field effect transistor performance detection device comprises a circuit board 1 and a transistor 8, wherein a baffle 2 is fixedly connected to the top end of the circuit board 1, a heating wire 3 which is horizontally arranged is fixedly connected to one side of the top end of the baffle 2, a steel wire 4 is electrically connected to the top end of the circuit board 1, a pressing plate 5 which is horizontally arranged is fixedly connected to the other end of the steel wire 4, a spring 6 which is vertically arranged is fixedly connected to the top end of the pressing plate 5, the top end of the spring 6 is fixedly connected with the bottom end of the circuit board 1, a pin 7 which is horizontally arranged is electrically connected to the front end of the transistor 8, bent rods 9 are rotatably connected to the left side and the right side of the top end of the circuit board 1, spring pieces 10 are fixedly connected to the inner sides of the bent rods 9, the bottom end of the spring pieces 10 is fixedly connected with the top end of, the right end of the fixed block 11 is fixedly connected with a metal wire 12, the other end of the metal wire 12 is fixedly connected with a pull ring 13, the right side is fixedly connected with a limit ring 14 at the top end of the curved rod 9, and the inner side of the limit ring 14 is connected with the outer side of the metal wire 12 in a sliding mode.

One end face of the baffle 2 is in an arc-surface-shaped arrangement, the arc-surface end of the baffle 2 is in sliding connection with the bottom end of the outer side of the transistor 8, the arrangement is favorable for protecting an internal circuit of the transistor 8 and reducing friction at the bottom end of the transistor 8, the outer side of the metal wire 12 is in sliding connection with the spring clamp 15, the left end of the spring clamp 15 is attached to the right end of the limiting ring 14, the arrangement is favorable for stabilizing the bent rod 9 and maintaining the downward pressing state of the heating wire 3, the axis of the heating wire 3 and the center of the bent rod 9 are positioned on the same vertical plane, the heating wire 3 is positioned right above the transistor 8, the arrangement is favorable for accurately pressing the heating wire 3 to heat the transistor 8, the number of the steel wires 4 is 3, the lengths of the steel wires 4 are equal, the steel wires 4 are uniformly distributed at the top end of the pressing plate 5, and the arrangement is favorable, reducing the bending of the leads 7.

The model of the heating wire 3 is MZFR-J1000W heating wire.

The working process is as follows: before the device is used, a power supply is connected, a pressing plate 5 is pressed upwards, a spring 6 is stressed and compressed, a steel wire 4 slides upwards to push a transistor 8 forwards, the spring 6 extends, the pressing plate 5 is bounced downwards, the steel wire 4 slides downwards to press a pin 7, simple fixing of the pin 7 is realized, bending of the pin 7 is reduced, fracture is prevented, mechanical damage of the transistor 8 in the detection process is avoided, a pull ring 13 is pulled rightwards, a metal wire 12 moves rightwards, a fixing block 11 drives a left-side bent rod 9 to rotate clockwise, the left-side bent rod 9 drives the fixing block 11 and the metal wire 12 to descend, a limiting ring 14 descends to drive the right-side bent rod 9 to rotate anticlockwise, one end of the bent rod 9 presses a heating wire 3, the bottom end of the heating wire 3 is attached to the top end of the transistor 8, the heating wire 3 is electrified to heat the transistor 8, stability test of the transistor in a high, shortening the gap between experimental parameters and parameters actually used.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

VDMOS vertical gate field effect transistor performance detection device, including circuit board (1) and transistor (8), its characterized in that: the heating wire fixing structure is characterized in that a baffle (2) is fixedly connected to the top end of the circuit board (1), a heating wire (3) horizontally arranged is fixedly connected to one side of the top end of the baffle (2), a steel wire (4) is electrically connected to the top end of the circuit board (1), a pressing plate (5) horizontally arranged is fixedly connected to the other end of the steel wire (4), a vertically arranged spring (6) is fixedly connected to the top end of the pressing plate (5), the top end of the spring (6) is fixedly connected with the bottom end of the circuit board (1), a horizontally arranged pin (7) is electrically connected to the front end of the transistor (8), a bent rod (9) is rotatably connected to the left side and the right side of the top end of the circuit board (1), a spring piece (10) is fixedly connected to the inner side of the bent rod (9), the bottom end of the spring piece (10) is fixedly connected with the top end of the circuit board (1), and, the right-hand member fixedly connected with wire (12) of fixed block (11), the other end fixedly connected with pull ring (13) of wire (12), right side the top fixedly connected with spacing ring (14) of curved bar (9), and the inboard outside sliding connection of spacing ring (14) and wire (12).
2. The VDMOS vertical gate field effect transistor performance detection apparatus of claim 1, wherein: the inner end surface of the baffle (2) is arc-surface-shaped, and the arc-surface end of the baffle (2) is connected with the bottom end of the outer side of the transistor (8) in a sliding manner.
3. The VDMOS vertical gate field effect transistor performance detection apparatus of claim 1, wherein: the outside sliding connection of wire (12) has spring clamp (15), and the left end of spring clamp (15) and the right-hand member of spacing ring (14) are laminated mutually.
4. The VDMOS vertical gate field effect transistor performance detection apparatus of claim 1, wherein: the axis of the electric heating wire (3) and the center of the curved rod (9) are positioned on the same vertical plane, and the electric heating wire (3) is positioned right above the transistor (8).
5. The VDMOS vertical gate field effect transistor performance detection apparatus of claim 1, wherein: the quantity of steel wire (4) is 3, the length homogeneous phase of steel wire (4) equals, and steel wire (4) are evenly distributed on the top of clamp plate (5).