CN109633400A - VDMOS vertical gate field-effect transistor performance detection device - Google Patents
VDMOS vertical gate field-effect transistor performance detection device Download PDFInfo
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- CN109633400A CN109633400A CN201811569791.4A CN201811569791A CN109633400A CN 109633400 A CN109633400 A CN 109633400A CN 201811569791 A CN201811569791 A CN 201811569791A CN 109633400 A CN109633400 A CN 109633400A
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- fixedly connected
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention relates to transistor detection technique fields, in particular VDMOS vertical gate field-effect transistor performance detection device, including circuit board and transistor, the top of the circuit board is fixedly connected with baffle, the top side of the baffle is fixedly connected with horizontally disposed heating wire, the top of the circuit board is electrically connected with steel wire, the other end of the steel wire is fixedly connected with horizontally disposed pressing plate, the top of the pressing plate is fixedly connected with the spring being vertically arranged, and the top of spring is fixedly connected with the bottom end of circuit board, in the present invention, pass through the heating wire of setting, curved bar and wire realize the stability test to the transistor under the condition of high temperature, can transistor is able to detect the normal operation in the undesirable severe working environment of radiating, shorten the gap between experiment parameter and the parameter of actual use, this design concept Novelty, design science have huge economic benefit and extensive market prospects, are worth of widely use.
Description
Technical field
The present invention relates to transistor detection technique fields, specially VDMOS vertical gate field-effect transistor performance detection dress
It sets.
Background technique
Vertical double diffused metal-oxide semiconductor field effect transistor VDMOS has bipolar transistor and common MOS device concurrently
The advantages of part, either switch application or linear application, VDMOS are ideal power devices, and VDMOS is mainly used in electricity
Machine speed regulation, inverter, uninterruptible power supply, electronic switch, high-fidelity music center, car electrics and electric ballast etc., feature are to connect
Close infinitely great static input impedance characteristic, very fast switch time, conducting resistance positive temperature coefficient, approximate constant across
It leads, high dV/dt, when manufacture, one layer of N-type epitaxy layer is first grown on heavy doping N+ substrate, twice by p-type base area and N+ source region
The difference of horizontal proliferation junction depth forms channel, the two regions are all each by the injection of grid self-registered technology in ion implantation process
From impurity, therefore, the demand to VDMOS vertical gate field-effect transistor performance detection device is growing.
Currently there are most of VDMOS vertical gate field-effect transistor performance detection device be unable to test high temperature
The stability of transistor under state, can not can detect transistor normally transport in the undesirable severe working environment that radiates
Make, the parameter difference of experiment parameter and actual use is detected away from larger and traditional VDMOS vertical gate field-effect transistor performance
Device lacks the Simple fixing device to pin, and pin is easy bending and is even broken, is easy to damage transistor in the detection process
It is bad, therefore, VDMOS vertical gate field-effect transistor performance detection device is proposed regarding to the issue above.
Summary of the invention
The purpose of the present invention is to provide VDMOS vertical gate field-effect transistor performance detection devices, to solve above-mentioned back
The problem of being proposed in scape technology.
To achieve the above object, the invention provides the following technical scheme:
VDMOS vertical gate field-effect transistor performance detection device, including circuit board and transistor, the circuit board
Top is fixedly connected with baffle, and the top side of the baffle is fixedly connected with horizontally disposed heating wire, the circuit board
Top is electrically connected with steel wire, and the other end of the steel wire is fixedly connected with horizontally disposed pressing plate, and the top of the pressing plate is solid
Surely it is connected with the spring being vertically arranged, and the top of spring is fixedly connected with the bottom end of circuit board, the front end electricity of the transistor
Property be connected with horizontally disposed pin, be rotatably connected to curved bar at left and right sides of the top of the circuit board, the curved bar it is interior
Side is fixedly connected with spring leaf, and the bottom end of spring leaf is fixedly connected with the top of circuit board, and the top of the left side curved bar is solid
Surely it is connected with horizontally disposed fixed block, the right end of the fixed block is fixedly connected with wire, the other end of the wire
It is fixedly connected with pull ring, the top of the right side curved bar is fixedly connected with restraining position ring block, and the inside of stop collar and wire is outer
Slideslip connection.
Preferably, an end face of the baffle is arranged in arc surfaced, and the outer lower end of the curved end of baffle and transistor
It is slidably connected.
Preferably, spring clip, and the right end of the left end of spring clip and stop collar are slidably connected on the outside of the wire
It fits.
Preferably, the center of the axis of the heating wire and curved bar is located on same perpendicular, and heating wire is located at crystalline substance
The surface of body pipe.
Preferably, the quantity of the steel wire is 3, and the steel wire is equal in length, and steel wire is evenly distributed and is pressing
The top of plate.
Compared with prior art, the beneficial effects of the present invention are:
1, it in the present invention, is realized by the heating wire, curved bar and wire of setting to the steady of the transistor under the condition of high temperature
Qualitative test, be able to detect transistor can the normal operation in the undesirable severe working environment of radiating, shorten experiment parameter
Gap between the parameter of actual use.
2, in the present invention, the simple fixation to pin is realized by the steel wire, pressing plate and spring of setting, reduces pin
Bending, prevents from being broken, and transistor is avoided to occur mechanical failure in the detection process, and this design concept is novel, design science, tool
There are huge economic benefit and extensive market prospects, is worth of widely use.
Detailed description of the invention
Fig. 1 is overall structure of the present invention；
Fig. 2 is the mounting structure schematic diagram of baffle.
In figure: 1- circuit board, 2- baffle, 3- heating wire, 4- steel wire, 5- pressing plate, 6- spring, 7- pin, 8- transistor, 9-
Curved bar, 10- spring leaf, 11- fixed block, 12- wire, 13- pull ring, 14- stop collar, 15- spring clip.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The present invention provides a kind of technical solution referring to FIG. 1-2:
VDMOS vertical gate field-effect transistor performance detection device, including circuit board 1 and transistor 8, the circuit board 1
Top be fixedly connected with baffle 2, the top side of the baffle 2 is fixedly connected with horizontally disposed heating wire 3, the circuit
The top of plate 1 is electrically connected with steel wire 4, and the other end of the steel wire 4 is fixedly connected with horizontally disposed pressing plate 5, the pressing plate 5
Top be fixedly connected with the spring 6 being vertically arranged, and the top of spring 6 is fixedly connected with the bottom end of circuit board 1, the crystal
The front end of pipe 8 is electrically connected with horizontally disposed pin 7, is rotatably connected to curved bar at left and right sides of the top of the circuit board 1
9, the inside of the curved bar 9 is fixedly connected with spring leaf 10, and the bottom end of spring leaf 10 is fixedly connected with the top of circuit board 1,
The top of the left side curved bar 9 is fixedly connected with horizontally disposed fixed block 11, and the right end of the fixed block 11 is fixedly connected with
Wire 12, the other end of the wire 12 are fixedly connected with pull ring 13, and the top of the right side curved bar 9 is fixedly connected limited
Position ring 14, and the inside of stop collar 14 and the outside of wire 12 are slidably connected.
One end face of the baffle 2 is arranged in arc surfaced, and the curved end of baffle 2 and the outer lower end of transistor 8 are slided
Connection, this set are conducive to protect 8 internal circuit of transistor, reduce the friction of 8 bottom end of transistor, the wire 12 it is outer
Slideslip is connected with spring clip 15, and the left end of spring clip 15 and the right end of stop collar 14 fit, and this set is conducive to surely
To determine curved bar 9, maintains 3 pressed status of heating wire, the axis of the heating wire 3 and the center of curved bar 9 are located on same perpendicular,
And heating wire 3 is located at the surface of transistor 8, this set is conducive to heating wire 3 and precisely pushes heating transistor 8, the steel
The quantity of silk 4 is 3, and the steel wire 4 is equal in length, and steel wire 4 is evenly distributed in the top of pressing plate 5, this set
Be conducive to apply 3 pins 7 identical pressure, reduce the bending of pin 7.
The model MZFR-J1000W heating wire of heating wire 3.
Workflow: being powered on using preceding device, presses up pressing plate 5,6 forced compression of spring, sliding on steel wire 4, to
Preceding promotes transistor 8, spring 6 extend, and under 5 bullet of pressing plate, steel wire 4, which glides, compresses pin 7, realize the simple fixation to pin 7,
The bending for reducing pin 7, prevents from being broken, transistor 8 is avoided to occur mechanical failure in the detection process, pulls pull ring 13 to the right,
Wire 12 moves to right, and fixed block 11 drives left side curved bar 9 to rotate clockwise, and left side curved bar 9 drives fixed block 11 and wire 12
Decline, the decline of stop collar 14 drive right side curved bar 9 to rotate counterclockwise, and one end of curved bar 9 presses heating wire 3, the bottom end of heating wire 3
It fits with the top of transistor 8,3 electrified regulation transistor 8 of heating wire realizes the stability to the transistor under the condition of high temperature
Test, can be able to detect transistor the normal operation in the undesirable severe working environment that radiates, shortening experiment parameter and reality
The gap between parameter that border uses.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1.VDMOS vertical gate field-effect transistor performance detection device, including circuit board (1) and transistor (8), feature exists
In: the top of the circuit board (1) is fixedly connected with baffle (2), and the top side of the baffle (2) is fixedly connected with level and sets
The top of the heating wire (3) set, the circuit board (1) is electrically connected with steel wire (4), and the other end of the steel wire (4) is fixed to be connected
It is connected to horizontally disposed pressing plate (5), the top of the pressing plate (5) is fixedly connected with the spring (6) being vertically arranged, and spring (6)
Top be fixedly connected with the bottom end of circuit board (1), the front end of the transistor (8) is electrically connected with horizontally disposed pin
(7), it is rotatably connected to curved bar (9) at left and right sides of the top of the circuit board (1), is fixedly connected on the inside of the curved bar (9)
Have spring leaf (10), and the bottom end of spring leaf (10) is fixedly connected with the top of circuit board (1), the top of the left side curved bar (9)
End is fixedly connected with horizontally disposed fixed block (11), and the right end of the fixed block (11) is fixedly connected with wire (12), institute
The other end for stating wire (12) is fixedly connected with pull ring (13), and the top of the right side curved bar (9) is fixedly connected with restraining position ring block
(14), it and on the outside of the inside of stop collar (14) and wire (12) is slidably connected.
2. VDMOS vertical gate field-effect transistor performance detection device according to claim 1, it is characterised in that: described
One end face of baffle (2) is arranged in arc surfaced, and the curved end of baffle (2) and the outer lower end of transistor (8) are slidably connected.
3. VDMOS vertical gate field-effect transistor performance detection device according to claim 1, it is characterised in that: described
It is slidably connected on the outside of wire (12) spring clip (15), and the left end of spring clip (15) and the right end of stop collar (14) are affixed
It closes.
4. VDMOS vertical gate field-effect transistor performance detection device according to claim 1, it is characterised in that: described
The axis of heating wire (3) and the center of curved bar (9) are located on same perpendicular, and heating wire (3) is being located at transistor (8) just
Top.
5. VDMOS vertical gate field-effect transistor performance detection device according to claim 1, it is characterised in that: described
The quantity of steel wire (4) is 3, and steel wire (4) are equal in length, and steel wire (4) is evenly distributed on the top of pressing plate (5)
End.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811569791.4A CN109633400B (en) | 2018-12-21 | 2018-12-21 | VDMOS vertical grid field effect transistor performance detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811569791.4A CN109633400B (en) | 2018-12-21 | 2018-12-21 | VDMOS vertical grid field effect transistor performance detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109633400A true CN109633400A (en) | 2019-04-16 |
| CN109633400B CN109633400B (en) | 2020-10-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811569791.4A Active CN109633400B (en) | 2018-12-21 | 2018-12-21 | VDMOS vertical grid field effect transistor performance detection device |
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| US6914446B1 (en) * | 2003-07-22 | 2005-07-05 | Unisys Corporation | Chip tester having a heat-exchanger with an extendable period of operation |
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Effective date of registration: 20230928 Address after: B405, China Internet of Things International Innovation Park, No. 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Snow Cloud Data Technology Co.,Ltd. Address before: No. 1600, gaolang West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: WUXI INSTITUTE OF TECHNOLOGY |