CN109585238B - Field emission electrode and method for manufacturing the same - Google Patents
Field emission electrode and method for manufacturing the same Download PDFInfo
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- CN109585238B CN109585238B CN201811468465.4A CN201811468465A CN109585238B CN 109585238 B CN109585238 B CN 109585238B CN 201811468465 A CN201811468465 A CN 201811468465A CN 109585238 B CN109585238 B CN 109585238B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
The invention discloses a field emission electrode, which comprises a substrate and a metal electrode layer formed on the substrate, wherein a plurality of indium columns are arranged on the metal electrode layer in an array manner, and a plurality of nanowires are arranged on the top surface of each indium column. The preparation method comprises the following steps: s10, providing a substrate and depositing on the substrate to form a metal electrode layer; s20, preparing a photoresist mask plate with a hole array on the metal electrode layer; s30, depositing indium materials on the photoresist mask plate, and then stripping the photoresist mask plate to obtain a plurality of indium columns arranged in an array; and S40, placing the substrate with the formed indium columns into a reaction furnace, and growing a plurality of nanowires on the top surface of each indium column. The field emission electrode has excellent field emission performance, the preparation process is simple, the growth of the nanowire can be carried out under the conditions of low temperature and low pressure, the growth condition is simple and mild, the control is easy, the quality of the product can be effectively improved, and the production cost can be reduced.
Description
Technical Field
The invention belongs to the technical field of field emission devices, and particularly relates to a field emission electrode and a preparation method thereof.
Background
The nano material is a material with the size approximately in the range of 1-300 nm, and a series of effects such as: surface effect, small-size effect, quantum size effect, macroscopic quantum tunneling effect and the like, and the effects enable the nano material to have special properties which macroscopic objects do not have, so that the nano material has large brilliance in various fields such as: electrochemistry, sensors, field emission devices, etc.
A field emission device, which emits electrons from a cathode electrode when an electric field is applied to the cathode electrode in a vacuum or a specific atmosphere, is widely used as an electron source for a microwave element, a sensor, a flat panel display device, and the like. In a field emission device, a strong electric field is formed near a tip by sharpening the tip of an electron emission material that emits electrons, which enables the electrons to be emitted at a low applied voltage. Nanowires are nano-sized fine structures having sharp tips and high aspect ratio (length/diameter), which can improve work function and lower driving voltage when used as an emission source of a field emission device, compared to conventional field emission sources such as molybdenum tips, and thus, there have been many reports on the use of carbon nanotubes, carbon nanofibers, etc. as field emission type electron emission elements.
At present, nanowires in a field emission electrode of a field emission device are mainly prepared on a pattern electrode layer formed on a support plate through a chemical vapor deposition process, and the method has the disadvantages of harsh growth conditions, immature controllable growth technology and high growth cost, and is not suitable for preparing a field emission electrode array with a large area.
Therefore, when the nanowire is used as an emission source of a field emission device, how to improve the field emission performance of the field emission electrode and reduce the difficulty of the preparation process of the field emission electrode is a problem which is always sought to be solved in the industry.
Disclosure of Invention
In view of the above, the present invention is directed to provide a field emission electrode having excellent field emission performance, and the preparation process thereof is simple and easy to control, and is suitable for preparing a field emission electrode array having a large area.
In order to achieve the purpose, the invention adopts the following technical scheme:
a field emission electrode comprises a substrate and a metal electrode layer formed on the substrate, wherein a plurality of indium columns are arranged on the metal electrode layer in an array mode, and a plurality of nanowires are arranged on the top surface of each indium column.
Specifically, the top surface of the indium column is convex, the plurality of nanowires are formed on the top surface of the indium column in an upright state, and the plurality of nanowires are formed in a divergent structure centered on the top surface of the indium column.
Specifically, the indium columns have a height of 1-2 μm and a diameter of 1-2 μm.
Specifically, the metal electrode layer is made of molybdenum, chromium, cadmium or iron, and the thickness of the metal electrode layer is 250-300 nm.
Specifically, the nanowire is a cuprous sulfide nanowire.
Specifically, a copper thin film layer covers the top surface of the indium column, and the nanowires are connected to the copper thin film layer.
Specifically, the diameter of the nanowire is 0.1-0.18 μm, the length of the nanowire is 1.5-3 μm, and the length-diameter ratio of the nanowire is 8.3-30.
The present invention also provides a method for preparing the field emission electrode, which comprises the steps of:
s10, providing a substrate and depositing a metal material on the substrate to form a metal electrode layer;
s20, preparing and forming a photoresist mask plate on the metal electrode layer, wherein holes corresponding to a plurality of indium columns arranged in an array to be prepared and formed are formed in the photoresist mask plate;
s30, depositing indium materials on the photoresist mask plate, then stripping the photoresist mask plate, and obtaining a plurality of indium columns which are arranged in an array on the metal electrode layer;
and S40, placing the substrate with the indium columns in a reaction furnace, and growing a plurality of nanowires on the top surface of each indium column.
Specifically, in step S30, depositing an indium material and a copper material on the photoresist mask plate in sequence, and then peeling off the photoresist mask plate to obtain a plurality of indium columns arranged in an array on the metal electrode layer, wherein the top surfaces of the indium columns are covered with a copper layer; in step S40, placing the substrate with the indium columns formed thereon in a reaction furnace, introducing a mixed gas of air and hydrogen sulfide into the reaction furnace, reacting the mixed gas with the copper layer to grow nanowires, and growing a plurality of cuprous sulfide nanowires on the top surface of each indium column; controlling the copper layer to completely react with the mixed gas so as to enable the prepared cuprous sulfide nanowire to be connected to the top surface of the indium column; or, the copper layer and the mixed gas are controlled not to be completely reacted, so that a copper thin film layer is coated on the top surface of the indium column, and the prepared cuprous sulfide nanowires are connected to the copper thin film layer.
Specifically, the step S40 specifically includes: washing and drying the substrate on which the indium columns are formed, and then placing the substrate in a reaction furnace; setting the environment in the reaction furnace to be in a water vapor saturation state and vacuumizing until the air pressure is below 0.01 Pa; inputting mixed gas of air and hydrogen sulfide into the reaction furnace, wherein the ratio of the air to the hydrogen sulfide in the mixed gas is 3-5: 1; and setting the temperature in the reaction furnace to be 35-40 ℃, so that the mixed gas reacts with the copper layer to grow nanowires, and growing a plurality of cuprous sulfide nanowires on the top surface of each indium column.
According to the field emission electrode provided by the embodiment of the invention, in the electrode structure which utilizes the nano wire as the emission source of the field emission device, the indium columns which are arranged in an array mode are arranged on the bottom electrode firstly, and then the nano wire is arranged on the top surface of the indium column, so that on one hand, the connection performance of the nano wire and the bottom electrode can be improved by the indium column, and on the other hand, the emission performance of a nano wire emitter can be obviously improved by the indium material; furthermore, the indium material has strong adsorption effect on the nanowires on the surface of the indium material and can generate agglomeration effect, therefore, a plurality of nanowires on the top surface of the indium column form a divergent structure taking the top surface of the indium column as the center, and similar to the sea urchin-shaped structure, the nanowires with the sea urchin-shaped structure can further enhance the emission performance of the nanowires, and the starting electric field is obviously reduced. In addition, the field emission electrode provided by the embodiment of the invention has a simple preparation process, the growth of the nanowire can be carried out under the conditions of low temperature and low pressure, the growth conditions are simple and mild, the control is easy, the quality of the product can be effectively improved, the production cost is reduced, and the preparation method is suitable for preparing the field emission electrode array with a large area.
Drawings
Fig. 1 is a schematic view of the structure of a field emission electrode according to an embodiment of the present invention;
FIG. 2 is an SEM image of cuprous sulfide nanowires in an example of the invention;
FIG. 3 is an SEM image of a resulting tip of a cuprous sulfide nanowire in an example of the invention;
fig. 4 is a schematic view of the structure of a field emission electrode in another embodiment of the present invention;
fig. 5 is a graph of discharge performance of a field emission electrode according to an embodiment of the present invention;
fig. 6a to 6d are exemplary illustrations of device structures obtained by respective process steps in the method for manufacturing a field emission electrode according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
The present embodiment firstly provides a field emission electrode, as shown in fig. 1, the field emission electrode 100 includes a substrate 10 and a metal electrode layer 20 formed on the substrate 10, a plurality of indium columns 30 arranged in an array are disposed on the metal electrode layer 20, and a plurality of nanowires 40 are disposed on a top surface of each indium column 30.
In the above electrode structure, the indium columns 30 arranged in an array are firstly arranged on the bottom electrode (metal electrode layer 20), and then the nanowires 40 are arranged on the top surfaces of the indium columns 30, so that on one hand, the indium columns 30 can improve the connection performance of the nanowires 30 and the bottom electrode 20, on the other hand, the indium material can remarkably improve the emission performance of the nanowire emitter, and especially can remarkably improve the emission performance of the semiconductor nanowires.
In this embodiment, as shown in fig. 1, the top surface of the indium column 30 is convex, and the plurality of nanowires 40 are formed on the top surface of the indium column 30 in an upright state. The indium material has a strong adsorption effect on the nanowires 40 on the surface thereof and can generate an agglomeration effect, and thus, the plurality of nanowires 40 are formed in a divergent structure centering on the top surface of the indium column 30 to form a sea urchin-like structure, and the sea urchin-like structure nanowires 40 can further enhance the emission performance of the nanowires, thereby allowing the turn-on electric field of the above-provided field emitter electrode 100 to be significantly reduced and electron emission to be achieved at a low applied voltage.
In this embodiment, the substrate 10 is a glass substrate, the metal electrode layer 20 is made of molybdenum, and the thickness of the metal electrode layer 20 may be set to 250 to 300 nm. It should be noted that, in other embodiments, the substrate 10 may also be selected as another rigid substrate or a flexible substrate commonly used in the field emission device field, the material of the metal electrode layer 20 may also be selected from chromium, cadmium, or iron, and when the material of the metal electrode layer 20 is selected from chromium, cadmium, or iron, the thickness of the metal electrode layer is also set within a range of 250 to 300 nm.
In this embodiment, the nanowire 40 is a cuprous sulfide nanowire. Wherein fig. 2 is an SEM image of the cuprous sulfide nanowires in the present embodiment, fig. 3 is an SEM image of the tips of the cuprous sulfide nanowires in the present embodiment, and it can be seen from fig. 2 and 3 that the nanowires 40 on the top surface of the indium columns 30 have a divergent structure, i.e., a structure similar to a sea urchin-like structure. The cuprous sulfide nanowire is a narrow bandgap semiconductor with a direct band gap of 1.2ev, has specific electrical, optical and chemical properties, and particularly has specific conductivity, so that the emission performance of a field emission electrode can be remarkably improved when the cuprous sulfide is used as an emission source of a field emission device.
Specifically, the diameter of the cuprous sulfide nanowire 40 is 0.1-0.18 μm, the length of the cuprous sulfide nanowire is 1.5-3 μm, the length-diameter ratio of the cuprous sulfide nanowire is 8.3-30, and the cuprous sulfide nanowire has a very large length-diameter ratio.
In a specific scheme, the height of the indium columns 30 can be set to 1-2 μm, the diameter can be set to 1-2 μm, and the center distance between two adjacent indium columns can be set to about 50 μm.
In another embodiment, a field emission electrode is provided, as shown in fig. 4, the field emission electrode 101 is different from the field emission electrode 100 in this embodiment in that: a copper thin film layer 50 is coated on the top surface of the indium column 30, and the plurality of nanowires 40 are connected to the copper thin film layer 50.
Fig. 5 is a graph of discharge performance of a field emission electrode according to an embodiment of the present invention. Specifically, the field emission electrode 100 provided above was disposed opposite to another electrode plate, and an electric field was applied to both electrodes to test the discharge performance of the field emission electrode 100, wherein the maximum current was denoted as ImaxThe on-state electric field intensity is 0.1ImaxThe corresponding electric field strength under current. As can be seen from FIG. 5, the field emission maximum current I of the field emission electrode in this embodiment max200 muA, and the current corresponding to the electric field intensity is turned on to be 0.1I max20 mua, the corresponding on-field strength is 4.852MV/m, which has excellent field emission performance.
This embodiment also provides a method for manufacturing a field emission electrode as described above, with reference to fig. 6a to 6d in combination with fig. 1, the method for manufacturing a field emission electrode includes the steps of:
s10, as shown in fig. 6a, providing a substrate 10 and depositing a metal material on the substrate 10 to form a metal electrode layer 20.
Specifically, a glass substrate is selected for the substrate 10 of the present embodiment, and the material of the metal electrode layer 20 is molybdenum.
Firstly, washing and drying a glass substrate, then placing the glass substrate into a chamber of a magnetron sputtering device, and vacuumizing to 3 x 10-4Pa, introducing nitrogen as protective gas to make the pressure reach 0.3Pa, then turning on the magnetron sputtering power supply of the molybdenum target to adjust the power to 500w, starting sputtering after stabilization, and the sputtering time is 20 to EThe thickness of the sputtered molybdenum was approximately 270nm for 30 minutes. It should be noted that, when the material of the metal electrode layer 20 is other materials, such as chromium, cadmium, or iron, the specific process parameters of the magnetron sputtering may be adjusted according to actual needs.
S20, as shown in fig. 6b, preparing a photoresist mask 200 on the metal electrode layer 20, wherein holes 201 corresponding to a plurality of indium columns arranged in an array to be prepared and formed are formed in the photoresist mask 200.
Specifically, a photoresist layer is first spin-coated on the metal electrode layer 20, and then the photoresist layer is subjected to exposure and development processes, so that a photoresist film plate 200 is prepared on the metal electrode layer 20, wherein an array of holes 201 is formed in the photoresist film plate 200. The size of the holes 201 and the specific parameters such as the hole pitch need to be determined according to a plurality of indium columns arranged in an array to be prepared and formed.
And S30, depositing indium materials on the photoresist mask plate, then stripping the photoresist mask plate, and obtaining a plurality of indium columns which are arranged in an array on the metal electrode layer.
In this embodiment, the nanowires to be grown subsequently are selected to be cuprous sulfide nanowires, and therefore, in step S30, as shown in fig. 6c, an indium material 300 and a copper material 500 are sequentially deposited on the photoresist mask 200, and then the photoresist mask 200 is peeled off, so that a plurality of indium columns 30 arranged in an array are obtained on the metal electrode layer 20, and the top surfaces of the indium columns 30 are covered with a copper layer 50 a.
Specifically, first, an indium material is deposited: placing the glass substrate with the photoresist mask plate 200 in the cavity of the magnetron sputtering device, and vacuumizing to 3 × 10-4And Pa, sputtering by adopting an indium target, washing with argon, adjusting the flow of the argon to enable the pressure to reach the working pressure of 2Pa, then opening a magnetron sputtering power supply of the indium target, adjusting the power to 60w, and sputtering for 210 minutes to enable the sputtering thickness to reach 1-2 μm. Then depositing copper material, and vacuumizing the cavity of the magnetron sputtering equipment to 3 multiplied by 10-4Pa, then changing copper target to sputter, adjusting argon flow to reach the targetThe working pressure is 0.3Pa, the working power of the copper target is adjusted to 100w, sputtering is carried out for 120 minutes, and the sputtering thickness is approximately 1-2 mu m. Next, the photoresist mask 200 is stripped: taking the substrate on which the indium material and the copper material are deposited out of the magnetron sputtering equipment, exposing for 100s under an ultraviolet lamp exposure machine, washing the photoresist mask plate 200 with a developing solution, and stripping and removing the indium material and the copper material outside the holes 201 of the photoresist mask plate 200, thereby obtaining a plurality of indium columns 30 arranged in an array on the metal electrode layer 20, and the top surfaces of the indium columns 30 are covered with copper layers 50 a.
S40, referring to fig. 6d, the substrate with the indium columns 30 formed thereon is placed in a reaction furnace, and a plurality of nanowires 40 are grown on the top surface of each indium column 30.
Step S40 specifically includes:
and S41, washing and drying the substrate after the indium columns are formed, and then placing the substrate into a reaction furnace.
Specifically, the substrate is washed three times with 8% dilute hydrochloric acid solution, the residual dilute hydrochloric acid solution is washed with deionized water, blow-dried and dried with a nitrogen blow gun, and then the substrate is placed in a reaction furnace.
In a preferred embodiment, the atmosphere in the reaction furnace is set to a water vapor saturated state and is evacuated to a gas pressure of 0.01Pa or less. Specifically, deionized water may be injected into the reaction furnace, and then heated to evaporate the deionized water to reach a water vapor saturation state. The environment in the reaction furnace is set to be in a water vapor saturation state, so that the flowing speed of reaction gas in the reaction furnace can be increased, the growth rate of the nanowires is increased, and the process is accelerated.
S42, inputting mixed gas of air and hydrogen sulfide into the reaction furnace, wherein the ratio of the air to the hydrogen sulfide in the mixed gas is 3-5: 1, preferably set to 4: 1.
and S43, closing the air inlet valve, opening a heating power supply to adjust the temperature in the reaction furnace to be 35-40 ℃ (preferably 37 ℃), enabling the mixed gas to react with the copper layer 50a to grow nanowires, and growing a plurality of cuprous sulfide nanowires 40 on the top surface of each indium column 30.
It should be noted that, in step S43, the copper layer may be controlled to completely react with the mixed gas, so that the prepared cuprous sulfide nanowire is connected to the top surface of the indium column, and a field emitter electrode as shown in fig. 1 is obtained. Or, the copper layer and the mixed gas are controlled not to be completely reacted, so that a copper thin film layer is coated on the top surface of the indium column, and the prepared cuprous sulfide nanowires are connected to the copper thin film layer, and the field emission electrode shown in fig. 4 is correspondingly obtained.
By combining the steps S10-S40, the preparation method of the field emission electrode is simple in preparation process, the growth of the nanowires is carried out under the conditions of low temperature and low pressure, the growth conditions are simple and mild, the control is easy, the quality of products can be effectively improved, the production cost is reduced, and the method is suitable for preparing a field emission electrode array with a large area.
In summary, the field emission electrode provided in the above embodiments has excellent field emission performance, and the preparation process is simple and easy to control, and is suitable for preparing a field emission electrode array having a large area.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (7)
1. A field emission electrode is characterized by comprising a substrate and a metal electrode layer formed on the substrate, wherein a plurality of indium columns arranged in an array mode are arranged on the metal electrode layer, and a plurality of nanowires are arranged on the top surface of each indium column;
the top surface of the indium column is convex, the nanowires are formed on the top surface of the indium column in an upright state, and the nanowires are formed into a divergent structure taking the top surface of the indium column as the center;
the nano wire is a cuprous sulfide nano wire, the diameter of the nano wire is 0.1-0.18 mu m, the length of the nano wire is 1.5-3 mu m, and the length-diameter ratio of the nano wire is 8.3-30.
2. The field emission electrode as claimed in claim 1, wherein the indium columns have a height of 1 to 2 μm and a diameter of 1 to 2 μm.
3. The field emission electrode according to claim 1, wherein the metal electrode layer is made of molybdenum, chromium, cadmium or iron, and has a thickness of 250 to 300 nm.
4. The field emitter electrode according to claim 3, wherein a copper thin film layer is coated on the top surface of the indium stud, and the plurality of nanowires are connected to the copper thin film layer.
5. A method of manufacturing a field emitter electrode according to any of claims 1 to 4, comprising the steps of:
s10, providing a substrate and depositing a metal material on the substrate to form a metal electrode layer;
s20, preparing and forming a photoresist mask plate on the metal electrode layer, wherein holes corresponding to a plurality of indium columns arranged in an array to be prepared and formed are formed in the photoresist mask plate;
s30, depositing indium materials on the photoresist mask plate, then stripping the photoresist mask plate, and obtaining a plurality of indium columns which are arranged in an array on the metal electrode layer;
and S40, placing the substrate with the indium columns in a reaction furnace, and growing a plurality of nanowires on the top surface of each indium column.
6. The method of manufacturing a field emission electrode according to claim 5,
in the step S30, depositing an indium material and a copper material on the photoresist mask plate in sequence, and then peeling off the photoresist mask plate to obtain a plurality of indium columns arranged in an array on the metal electrode layer, wherein the top surfaces of the indium columns are covered with a copper layer;
in step S40, placing the substrate with the indium columns formed thereon in a reaction furnace, introducing a mixed gas of air and hydrogen sulfide into the reaction furnace, reacting the mixed gas with the copper layer to grow nanowires, and growing a plurality of cuprous sulfide nanowires on the top surface of each indium column;
controlling the copper layer to completely react with the mixed gas so as to enable the prepared cuprous sulfide nanowire to be connected to the top surface of the indium column; or, the copper layer and the mixed gas are controlled not to be completely reacted, so that a copper thin film layer is coated on the top surface of the indium column, and the prepared cuprous sulfide nanowires are connected to the copper thin film layer.
7. The method for preparing a field emission electrode according to claim 6, wherein the step S40 specifically comprises:
washing and drying the substrate on which the indium columns are formed, and then placing the substrate in a reaction furnace;
setting the environment in the reaction furnace to be in a water vapor saturation state and vacuumizing until the air pressure is below 0.01 Pa;
inputting mixed gas of air and hydrogen sulfide into the reaction furnace, wherein the ratio of the air to the hydrogen sulfide in the mixed gas is 3-5: 1;
and setting the temperature in the reaction furnace to be 35-40 ℃, so that the mixed gas reacts with the copper layer to grow nanowires, and growing a plurality of cuprous sulfide nanowires on the top surface of each indium column.
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| PCT/CN2019/122610 WO2020114379A1 (en) | 2018-12-03 | 2019-12-03 | Field emission electrode and preparation method therefor |
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| CN110071027B (en) * | 2019-04-24 | 2022-02-15 | 深圳先进技术研究院 | Field emission device for emitting X-rays and method for manufacturing the same |
| CN111261473B (en) * | 2020-03-31 | 2021-06-04 | 中山大学 | Method for manufacturing single one-dimensional nano-structure field emission cold cathode |
| CN111584672B (en) * | 2020-04-23 | 2021-12-24 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Indium column of infrared focal plane detector and preparation method thereof |
| CN113390952B (en) * | 2021-06-15 | 2022-12-16 | 上海航天科工电器研究院有限公司 | Ionization type gas sensor and preparation method thereof |
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| CN1155980C (en) * | 2001-11-27 | 2004-06-30 | 北京大学 | Field emitting cathode and its making process and application |
| CN100446164C (en) * | 2005-12-27 | 2008-12-24 | 中原工学院 | Panel display having integrated back grid structure and its manufacturing technology |
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