CN109524503B - Drilling method for electrode leading-out hole of photovoltaic cell - Google Patents
Drilling method for electrode leading-out hole of photovoltaic cell Download PDFInfo
- Publication number
- CN109524503B CN109524503B CN201811217093.8A CN201811217093A CN109524503B CN 109524503 B CN109524503 B CN 109524503B CN 201811217093 A CN201811217093 A CN 201811217093A CN 109524503 B CN109524503 B CN 109524503B
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- out hole
- electrode lead
- drilling
- electrode
- leading
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- 238000005553 drilling Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000011521 glass Substances 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 42
- 239000005329 float glass Substances 0.000 claims description 39
- 239000005341 toughened glass Substances 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811217093.8A CN109524503B (en) | 2018-10-18 | 2018-10-18 | Drilling method for electrode leading-out hole of photovoltaic cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811217093.8A CN109524503B (en) | 2018-10-18 | 2018-10-18 | Drilling method for electrode leading-out hole of photovoltaic cell |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109524503A CN109524503A (en) | 2019-03-26 |
CN109524503B true CN109524503B (en) | 2022-08-30 |
Family
ID=65770659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811217093.8A Active CN109524503B (en) | 2018-10-18 | 2018-10-18 | Drilling method for electrode leading-out hole of photovoltaic cell |
Country Status (1)
Country | Link |
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CN (1) | CN109524503B (en) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100586885C (en) * | 2003-10-04 | 2010-02-03 | 大连路明发光科技股份有限公司 | Manufacturing method for long persistence luminescent glass |
CN101661964B (en) * | 2008-08-27 | 2012-02-22 | 比亚迪股份有限公司 | Solar module and manufacturing method thereof |
WO2011129368A1 (en) * | 2010-04-13 | 2011-10-20 | 京セラ株式会社 | Solar cell element and process for production thereof |
CN103819080B (en) * | 2012-11-16 | 2016-09-28 | 江苏春戈光电玻璃技术有限公司 | Glass drilling processing method |
WO2014136359A1 (en) * | 2013-03-07 | 2014-09-12 | ローム株式会社 | Organic thin film solar cell, method for producing same, and electronic apparatus |
CN104810420A (en) * | 2014-01-23 | 2015-07-29 | 安阳市方圆钢化玻璃有限责任公司 | Light transmitting crystalline silicon solar cell assembly |
CN207058937U (en) * | 2017-04-20 | 2018-03-02 | 东莞市三丰精密玻璃科技有限公司 | A kind of highly-efficient glass double-face drilling device |
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2018
- 2018-10-18 CN CN201811217093.8A patent/CN109524503B/en active Active
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CN109524503A (en) | 2019-03-26 |
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PB01 | Publication | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20201229 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Beijing Huihong Technology Co.,Ltd. Address before: Room 309-53, 3 / F, entrepreneurship service center, 163 Gaoxin 2nd Road, Heyuan hi tech Industrial Development Zone, Guangdong 517000 Applicant before: HUAXIA YINENG (GUANGDONG) NEW ENERGY TECHNOLOGY Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20211029 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Dongjun new energy Co.,Ltd. Address before: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant before: Beijing Huihong Technology Co.,Ltd. |
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GR01 | Patent grant | ||
GR01 | Patent grant |