CN104810420A - Light transmitting crystalline silicon solar cell assembly - Google Patents
Light transmitting crystalline silicon solar cell assembly Download PDFInfo
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- CN104810420A CN104810420A CN201410030590.2A CN201410030590A CN104810420A CN 104810420 A CN104810420 A CN 104810420A CN 201410030590 A CN201410030590 A CN 201410030590A CN 104810420 A CN104810420 A CN 104810420A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 7
- 239000005357 flat glass Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims description 121
- 229910052710 silicon Inorganic materials 0.000 claims description 97
- 239000010703 silicon Substances 0.000 claims description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 76
- 239000013078 crystal Substances 0.000 claims description 76
- 241000446313 Lamella Species 0.000 claims description 57
- 239000005341 toughened glass Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- 238000010248 power generation Methods 0.000 abstract description 3
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 17
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 16
- 238000005496 tempering Methods 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000004080 punching Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 229920000742 Cotton Polymers 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000005329 float glass Substances 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000003712 anti-aging effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a light transmitting crystalline silicon solar cell assembly, and belongs to the technical field of photovoltaic power generation assemblies. The assembly comprises a plurality of crystalline silicon cell pieces which are connected together. The crystalline silicon cell pieces are arranged at intervals for light transmitting. Front plate glass of an illuminated surface of the assembly is flat plate glass with the thickness being 2-4mm, back plate glass of a shady surface adopts flat plate glass with the thickness being 2-4mm, the crystalline silicon cell pieces are located between the front plate glass and the back plate glass, and PVB package film layers are arranged at least between the crystalline silicon cell pieces and the back plate glass. According to the invention, the crystalline silicon cell is applied to photovoltaic building integration as the light transmitting assembly so as to improve the power generation capacity per unit area.
Description
Technical field
The present invention relates to a kind of crystal silicon solar battery assembly, particularly a kind of light-transmission type crystal silicon solar battery assembly, belongs to photovoltaic electrification component technical field.
Background technology
Photovoltaic generation is acknowledged as one of following main clean energy resource, although encounter various problem in its evolution, its future is still had an optimistic view of by industry.Current photovoltaic electrification component mainly contains crystal silicon solar battery assembly, amorphous silicon solar cell assembly and other semiconductor photovoltaic assembly, as CIGS thin-film solar cell etc., photovoltaic generation needs to rely on to be built photovoltaic electric station grid connection or realizes the power supply to user from net, this mode requires that photovoltaic plant needs to possess the space of installation, the relatively nervous construction and development constraining large-scale photovoltaic power station to a certain extent in China due to land resource, the extensive power station of current China is mainly built in the relatively well-to-do area of the land resources such as northwest, in Plain and economically developed area because shortage of land resource can not build large-scale photo-voltaic power generation station substantially, in order to overcome photovoltaic generation this bottleneck in the application, the design of BIPV is arisen at the historic moment, photovoltaic generation and current architectural design are built and are merged by this design, for the installation application of photovoltaic generation provides wide space, but BIPV is to the requirement having its individual character special of photovoltaic module, one of its most basic demand is exactly the needs that can meet architectural lighting while generating, also has such as intensity, the requirement index of the secure contexts such as explosion-proof type, so want the incremental advances got in BIPV, need to meet its requirement in the characteristic of photovoltaic module, the photovoltaic module of current main flow is crystal silicon type solar module and amorphous silicon type solar module, the structure of crystal silicon type solar module is generally incidence surface and adopts cover-plate glass (to be generally ultrawhite cotton ginning glass, adopt roll-in method manufacture), the crystal-silicon battery slice be linked together, encapsulating film (being generally EVA adhesive film or PVB glued membrane), back veneer material (is generally polymeric membrane, as TPT, TPE, KPK etc.) by laminating packaging together, the crystal silicon solar battery assembly of this structure is due to header board employing cotton ginning glass, backboard adopts polymeric membrane, light is irradiated to after assembly surface cannot be through, so this class component cannot meet the needs of BIPV daylighting, be mainly used in the construction of photovoltaic plant, amorphous silicon film solar battery can by realizing the light-transmission type of assembly to modes such as generating pond laser ablations, but this class component has problem in the application of BIPV: one is that conversion efficiency is on the low side, due to the conversion efficiency of amorphous silicon photovoltaic assembly itself, comparatively crystal silicon component is a lot, the conversion efficiency of the lamination photovoltaic module of current amorphous microcrystalline structure is to also about 10%, in order to take into account lighting quantity and daylighting area, also to etch away corresponding electricity generate function area, so the energy output that this kind of photovoltaic module is applied to the upper unit are of photovoltaic building one is very low, if etch away the generating area of 30% for printing opacity, at present the amorphous microcrystalline laminated cell of most high conversion efficiency is actual convert according to area after generating efficiency lower than 7%, this causes the generating efficiency of unit are lower, two is that amorphous silicon film battery needs to use electro-conductive glass in the mill, electro-conductive glass realizes by making conductive layer at glass surface, in the process that hull cell is produced, need to carry out to the conductive film layer of electro-conductive glass the needs that laser ablation manufactures to meet battery unit, the Voice segment of laser ablation process requires there is strict requirement to the evenness of electro-conductive glass and the thickness of conductive film layer, because glass tempering can bring negative effect to the evenness of glass surface, so the tempering of electro-conductive glass substantially cannot be realized in amorphous silicon film solar battery manufacture, the glass unmatched internal stress caused in front and back can be brought when encapsulating to cause during back-panel glass employing toughened glass like this to break, the problem such as to come unglued, adopt the glass of not tempering can cause the intensity of such solar cell, explosion-proof can not meet the demands in the application of BIPV, three is due to glass flatness, make conducting film, the needs of strength of glass, the thinlyyest in the application of the current industrialization of electro-conductive glass thickness of amorphous silicon film solar battery can only accomplish 3.2mm, situation lower than 3.2mm declines and cannot meet intensity, evenness, the needs that conducting film makes, 3.2mm rank can only be accomplished so the thinnest in the electro-conductive glass large-scale application of current amorphous silicon film solar battery, this limits the lightweight of assembly to a certain extent, before crystal silicon battery, glass sheet adopts cotton ginning glass to be also there is same problem, the thickness of front glass sheet is thinned to 3.2mm most, ageing test qualification rate is done very low after causing component package lower than the distortion caused after tempering when 3.2mm, ordinary life and the use of battery can not be ensured, even if some enterprise declares to adopt the glass of below 3.2mm thickness to make photovoltaic electrification component, but it is extremely low to be put to large-scale production yields, there is no ripe technology application at present and on a large scale the packaged glass of photovoltaic electrification component is reduced to below 3.2mm, all these limits its large-scale application in BIPV, need a kind of efficient in BIPV application development, safety, environmental protection, light-weighted solar module.
Summary of the invention
The present invention is for providing a kind of light-transmission type crystal silicon solar battery assembly.
Light-transmission type crystal silicon solar battery assembly provided by the present invention, comprise the polylith crystal-silicon battery slice be linked together, spacing distance is set between described crystal-silicon battery slice for printing opacity, before described assembly sensitive surface, glass sheet is the plate glass of thickness 2-4mm, shady face back-panel glass adopts thickness to be the plate glass of 2-4mm, crystal-silicon battery slice is between front glass sheet and back-panel glass, between crystal-silicon battery slice and back-panel glass, be at least provided with PVB encapsulate rete, the thickness that described PVB encapsulates rete is 0.38-1.14mm, further, between front glass sheet and crystal-silicon battery slice, be provided with a PVB encapsulate rete, be respectively to shady face from sensitive surface: the front glass sheet that 2-4mm is thick, the PVB that thickness is less than 0.4mm encapsulates rete, crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, the back-panel glass that 2-4mm is thick, further, described crystal-silicon battery slice is two-layer, is respectively from sensitive surface to each layer of shady face: the front glass sheet that 2-4mm is thick, first crystal silicon battery lamella, one PVB encapsulates rete, second crystal silicon battery lamella, 2nd PVB encapsulates rete, the back-panel glass that 2-4mm is thick, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, further, described crystal silicon battery lamella is two-layer, is respectively from sensitive surface to each layer of shady face: thickness is less than the front glass sheet of 3mm, first crystal silicon battery lamella, the PVB that thickness is less than 0.4mm encapsulates rete, second crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, thickness is less than the back-panel glass of 3mm, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, further, described crystal silicon battery lamella is two-layer, is respectively from sensitive surface to each layer of shady face: thickness is the front glass sheet of 2mm, first crystal silicon battery lamella, the PVB that thickness is less than 0.4mm encapsulates rete, second crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, thickness is the back-panel glass of 2mm, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, described front glass sheet, back-panel glass is toughened glass.
The Advantageous Effects of a kind of light-transmission type crystal silicon solar battery assembly provided by the present invention is: the present invention adopts and is arranged between two blocks of clear glasses by cell piece, transparent material PVB is adopted to encapsulate, the interval rationally arranged between cell piece can make light from the spatial transmission assembly at interval, not only realize crystal silicon component to generate electricity but also can printing opacity, because the generating efficiency of crystal silicon solar battery is higher, usual more than 16% at present, high-quality reach more than 19%, spacer area in this case between cell piece accounts for the words of whole assembly area 30%, under can meeting the prerequisite of the needs of daylighting completely, whole solar module amount to according to area after generating efficiency still more than 10%, be much higher than the amorphous silicon photovoltaic electrification component that current BIPV adopts, adopt two-layer thinner PVB encapsulated layer can make the distortion of the generation in component package post-compensation glass tempering process, the deflection interval allowed when being used in the toughened glass tempering of component package increases, and then can thickness of glass be reduced, it is completely qualified that test proves to adopt the anti-aging experimental performance of photovoltaic module of this structure, so namely, ensure that the quality of assembly, effectively can reduce again weight and the material cost of assembly, adopt bilayer cells sheet, light can be made to make full use of, improve the generating efficiency of the electrification component unit are of BIPV.Present invention produces following positive technique effect: one is can using crystal silicon battery as light-transmission type component application in BIPV, two is liftings that assembly of the present invention can realize unit are energy output in BIPV application, three is the thickness that the present invention effectively can reduce front glass sheet, back-panel glass, is conducive to the light-weighted realization of assembly.
Accompanying drawing explanation
Fig. 1 the first form front elevational schematic of the present invention.
Fig. 2 is the first form side, sectional view of the present invention.
Fig. 3 is the second form side-looking formula schematic cross-section of the present invention.
Fig. 4 is the third form side-looking formula schematic cross-section of the present invention.
Embodiment
In order to explain enforcement of the present invention more fully, provide embodiment of the present invention, these embodiments are only to elaboration of the present invention, do not limit the scope of the invention.Solar module in the present invention makes, and common laminating technology can be adopted to realize, and also can adopt the first edge sealing of the packaging technologies such as roll-in, then adopts autoclave manufacture craft to complete solar module and makes.
Light-transmission type crystal silicon solar battery assembly provided by the present invention, comprise the polylith crystal-silicon battery slice be linked together, it is characterized in that: spacing distance is set between described crystal-silicon battery slice for printing opacity, before described assembly sensitive surface, glass sheet is the plate glass of thickness 2-4mm, shady face back-panel glass adopts thickness to be the plate glass of 2-4mm, crystal-silicon battery slice is between front glass sheet and back-panel glass, between crystal-silicon battery slice and back-panel glass, be at least provided with PVB encapsulate rete, the thickness that described PVB encapsulates rete is 0.38-1.14mm, further, between front glass sheet and crystal-silicon battery slice, be provided with a PVB encapsulate rete, be respectively from sensitive surface to shady face: the front glass sheet that 2-4mm is thick, the PVB that thickness is less than 0.4mm encapsulates rete, crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, the back-panel glass that 2-4mm is thick, further, described crystal-silicon battery slice is two-layer, be respectively from sensitive surface to each layer of shady face: the front glass sheet that 2-4mm is thick, first crystal silicon battery lamella, one PVB encapsulates rete, second crystal silicon battery lamella, 2nd PVB encapsulates rete, the back-panel glass that 2-4mm is thick, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, further, described crystal silicon battery lamella is two-layer, be respectively from sensitive surface to each layer of shady face: thickness is less than the front glass sheet of 3mm, first crystal silicon battery lamella, the PVB that thickness is less than 0.4mm encapsulates rete, second crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, thickness is less than the back-panel glass of 3mm, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, further, described crystal silicon battery lamella is two-layer, be respectively from sensitive surface to each layer of shady face: thickness is the front glass sheet of 2mm, first crystal silicon battery lamella, the PVB that thickness is less than 0.4mm encapsulates rete, second crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, thickness is the back-panel glass of 2mm, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, described front glass sheet, back-panel glass is toughened glass, more optimize, the wire connected between each crystal-silicon battery slice adopts transparent conductors.
Below in conjunction with accompanying drawing, the present invention will be further elaborated.
Embodiment 1:
Fig. 1, Fig. 2 are the schematic diagrames that the first form of the present invention is relevant, in figure: 1-1: solar module, 1-2: crystal silicon battery lamella, 1-3: the interval between cell piece, 1-4: front glass sheet, 1-5:PVB encapsulates rete, 1-6: back-panel glass, front glass sheet, back-panel glass all adopts the float flat glass of 3.2mm thickness, before the selection optimized, glass sheet is ultra-white float glass, wire is adopted to connect according to designing requirement cell piece, optimize, the wire connected between each crystal-silicon battery slice adopts transparent conductors, be reserved with interval between cell piece as shown in 1-3, by front glass sheet, back-panel glass tempering, lead-in wire is used for according to technological requirement punching before back-panel glass tempering, PVB adopts the thickness of 0.76mm, first the battery lamella connected is established on front glass sheet upper berth, PVB layer is established on battery lamella upper berth, PVB layer covers back-panel glass, lamination or autoclave process is adopted to complete the making of assembly, other as arranged terminal box, the techniques such as glass punching complete as required with adopting traditional handicraft.
Embodiment 2:
Fig. 3 is the schematic diagram that the second form of the present invention is relevant, in figure: 1-1: solar module, 1-2: crystal silicon battery lamella, 1-4: front glass sheet, 1-51: the one PVB encapsulates rete, 1-52: the two PVB encapsulates rete, 1-6: back-panel glass, front glass sheet, back-panel glass can adopt the float flat glass of below 3.2mm thickness, the glass of thickness 2.0mm is adopted in the present embodiment, before the selection optimized, glass sheet is ultra-white float glass, wire is adopted to connect according to designing requirement cell piece, be reserved with the interval between cell piece, by front glass sheet, back-panel glass tempering, lead-in wire is used for according to technological requirement punching before back-panel glass tempering, one PVB encapsulates the thickness of the PVB employing 0.38mm of rete, 2nd PVB encapsulates the thickness that rete adopts 0.38mm, first establish a PVB to encapsulate rete 1-51 on front glass sheet upper berth, then the battery lamella connected is laid, establish the 2nd PVB to encapsulate rete 1-52 on battery lamella upper berth, 2nd PVB encapsulates on rete 1-52 and covers back-panel glass 1-6, lamination or autoclave process is adopted to complete the making of assembly, other as arranged terminal box, the techniques such as glass punching complete as required with adopting traditional handicraft, in the present embodiment, the PVB of the 0.76mm thickness of original one deck is changed into the PVB of two-layer 0.38mm thickness, deflection larger in toughened glass toughening process can be allowed, because the glass of usual 2mm is large and wayward compared with the deflection of glass in toughening process of 3.2mm thickness, so the requirement making solar module of the present invention still can be met after adopting the glass tempering of this programme 2.0mm thickness, the weight of final assembly can be effectively reduced.
Embodiment 3:
Fig. 4 is the schematic diagram that the third form of the present invention is relevant, in figure: 1-1: solar module, 1-21: the first crystal silicon battery lamella, 1-22: the second crystal silicon battery lamella, 1-4: front glass sheet, 1-51: the one PVB encapsulates rete, 1-52: the two PVB encapsulates rete, 1-6: back-panel glass, front glass sheet, back-panel glass can adopt the float flat glass of below 3.2mm thickness, the glass of thickness 2.0mm is adopted in the present embodiment, before the selection optimized, glass sheet is ultra-white float glass, wire is adopted to connect according to designing requirement cell piece, be reserved with the interval between cell piece, by front glass sheet, back-panel glass tempering, lead-in wire is used for according to technological requirement punching before back-panel glass tempering, one PVB encapsulates the thickness of the PVB employing 0.38mm of rete, 2nd PVB encapsulates the thickness that rete adopts 0.38mm, first the first crystal silicon battery lamella 1-21 connected is established on front glass sheet upper berth, then lay a PVB and encapsulate rete 1-51, and then lay the second crystal silicon battery lamella 1-22 connected, second crystal silicon battery lamella 1-22 lays the 2nd PVB and encapsulates rete 1-52, 2nd PVB encapsulates on rete 1-52 and covers back-panel glass 1-6, lamination or autoclave process is adopted to complete the making of assembly, other as arranged terminal box, the techniques such as glass punching complete as required with adopting traditional handicraft, in the present embodiment, the PVB of the 0.76mm thickness of original one deck is changed into the PVB of two-layer 0.38mm thickness, deflection larger in toughened glass toughening process can be allowed, because the glass of usual 2mm is large and wayward compared with the deflection of glass in toughening process of 3.2mm thickness, so the requirement making solar module of the present invention still can be met after adopting the glass tempering of this programme 2.0mm thickness, the weight of final assembly can be effectively reduced, original one deck battery lamella is changed into two-layer, sunlight can be utilized to greatest extent, the energy output the present invention increasing unit are adopts and is arranged between two blocks of clear glasses by cell piece, transparent material PVB is adopted to encapsulate, the interval rationally arranged between cell piece can make light from the spatial transmission assembly at interval, not only realize crystal silicon component to generate electricity but also can printing opacity, because the generating efficiency of crystal silicon solar battery is higher, usual more than 16% at present, high-quality reach more than 19%, spacer area in this case between cell piece accounts for the words of whole assembly area 30%, under can meeting the prerequisite of the needs of daylighting completely, whole solar module amount to according to area after generating efficiency still more than 10%, be much higher than the amorphous silicon photovoltaic electrification component that current BIPV adopts, adopt two-layer thinner PVB encapsulated layer can make the distortion of the generation in component package post-compensation glass tempering process, the deflection interval allowed when being used in the toughened glass tempering of component package increases, and then can thickness of glass be reduced, it is completely qualified that test proves to adopt the anti-aging experimental performance of photovoltaic module of this structure, so namely, ensure that the quality of assembly, effectively can reduce again weight and the material cost of assembly, adopt bilayer cells sheet, light can be made to make full use of, improve the generating efficiency of the electrification component unit are of BIPV.Present invention produces following positive technique effect: one is can using crystal silicon battery as light-transmission type component application in BIPV, two is liftings that assembly of the present invention can realize unit are energy output in BIPV application, three is the thickness that the present invention effectively can reduce front glass sheet, back-panel glass, is conducive to the light-weighted realization of assembly.
After detailed description embodiments of the present invention, the personage being familiar with this technology can be well understood to, do not departing under above-mentioned claim and spirit and can carry out various change and amendment, all above embodiment is done according to technical spirit of the present invention any simple modification, equivalent variations and modification, all belong to the scope of technical solution of the present invention, and the present invention is not also limited to the execution mode of example in specification.
Claims (5)
1. light-transmission type crystal silicon solar battery assembly, comprise the polylith crystal-silicon battery slice be linked together, it is characterized in that: spacing distance is set between described crystal-silicon battery slice for printing opacity, before described assembly sensitive surface, glass sheet is the plate glass of thickness 2-4mm, shady face back-panel glass adopts thickness to be the plate glass of 2-4mm, crystal-silicon battery slice is between front glass sheet and back-panel glass, between crystal-silicon battery slice and back-panel glass, be at least provided with PVB encapsulate rete, the thickness that described PVB encapsulates rete is 0.38-1.14mm.
2. light-transmission type crystal silicon solar battery assembly according to claim 1, it is characterized in that: between front glass sheet and crystal-silicon battery slice, be provided with a PVB encapsulate rete, be respectively to shady face from sensitive surface: the 2nd PVB that the PVB that the front glass sheet that 2-4mm is thick, thickness are less than 0.4mm encapsulates rete, crystal silicon battery lamella, thickness are less than 0.4mm encapsulates rete, back-panel glass that 2-4mm is thick.
3. light-transmission type crystal silicon solar battery assembly according to claim 1, it is characterized in that: described crystal-silicon battery slice is two-layer, be respectively from sensitive surface to each layer of shady face: the front glass sheet that 2-4mm is thick, the first crystal silicon battery lamella, a PVB encapsulate rete, the second crystal silicon battery lamella, the 2nd PVB encapsulate rete, back-panel glass that 2-4mm is thick, the first described crystal silicon battery lamella, the second crystal silicon battery lamella shape identical and on component thickness direction location overlap.
4. light-transmission type crystal silicon solar battery assembly according to claim 1, it is characterized in that: described crystal silicon battery lamella is two-layer, be respectively from sensitive surface to each layer of shady face: the back-panel glass that the 2nd PVB encapsulates rete, thickness is less than 3mm that the PVB that thickness is less than the front glass sheet of 3mm, the first crystal silicon battery lamella, thickness are less than 0.4mm encapsulates rete, the second crystal silicon battery lamella, thickness are less than 0.4mm, the first described crystal silicon battery lamella, the second crystal silicon battery lamella shape identical and on component thickness direction location overlap.
5. light-transmission type crystal silicon solar battery assembly according to claim 1, it is characterized in that: described crystal silicon battery lamella is two-layer, be respectively from sensitive surface to each layer of shady face: thickness is the front glass sheet of 2mm, first crystal silicon battery lamella, the PVB that thickness is less than 0.4mm encapsulates rete, second crystal silicon battery lamella, the 2nd PVB that thickness is less than 0.4mm encapsulates rete, thickness is the back-panel glass of 2mm, the first described crystal silicon battery lamella, second crystal silicon battery lamella shape identical and on component thickness direction location overlap, described front glass sheet, back-panel glass is toughened glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410030590.2A CN104810420A (en) | 2014-01-23 | 2014-01-23 | Light transmitting crystalline silicon solar cell assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410030590.2A CN104810420A (en) | 2014-01-23 | 2014-01-23 | Light transmitting crystalline silicon solar cell assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105609573A (en) * | 2016-02-29 | 2016-05-25 | 常州亚玛顿股份有限公司 | Novel crystalline silicon dual-glass photovoltaic curtain wall assembly |
| CN109476326A (en) * | 2016-05-24 | 2019-03-15 | 勃姆巴迪尔运输有限公司 | For the lateral photovoltaic window of the public transportation vehicles, relevant photovoltaic generating system and the public transportation vehicles |
| CN109524503A (en) * | 2018-10-18 | 2019-03-26 | 华夏易能（广东）新能源科技有限公司 | A kind of boring method of the electrode fairlead of photovoltaic cell |
| CN110047960A (en) * | 2019-05-20 | 2019-07-23 | 浙江晶科能源有限公司 | A kind of BIPV photovoltaic module |
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| CN202712222U (en) * | 2012-06-29 | 2013-01-30 | 江苏索拉特光伏科技发展有限公司 | Thin glass silicon cell assembly provided with antireflection film and radiation heat dissipation film structure |
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| CN105609573A (en) * | 2016-02-29 | 2016-05-25 | 常州亚玛顿股份有限公司 | Novel crystalline silicon dual-glass photovoltaic curtain wall assembly |
| CN109476326A (en) * | 2016-05-24 | 2019-03-15 | 勃姆巴迪尔运输有限公司 | For the lateral photovoltaic window of the public transportation vehicles, relevant photovoltaic generating system and the public transportation vehicles |
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| CN110047960A (en) * | 2019-05-20 | 2019-07-23 | 浙江晶科能源有限公司 | A kind of BIPV photovoltaic module |
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