CN109509809B - 一种红外焦平面探测器及其制备方法 - Google Patents
一种红外焦平面探测器及其制备方法 Download PDFInfo
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- CN109509809B CN109509809B CN201710825905.6A CN201710825905A CN109509809B CN 109509809 B CN109509809 B CN 109509809B CN 201710825905 A CN201710825905 A CN 201710825905A CN 109509809 B CN109509809 B CN 109509809B
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- focal plane
- plane detector
- infrared focal
- detector chip
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- 238000002360 preparation method Methods 0.000 title description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 79
- 238000002955 isolation Methods 0.000 claims abstract description 77
- 230000008569 process Effects 0.000 claims abstract description 53
- 238000001514 detection method Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000010329 laser etching Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 20
- 239000000243 solution Substances 0.000 description 15
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 238000002161 passivation Methods 0.000 description 11
- 238000005057 refrigeration Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Dicing (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710825905.6A CN109509809B (zh) | 2017-09-14 | 2017-09-14 | 一种红外焦平面探测器及其制备方法 |
Applications Claiming Priority (1)
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CN201710825905.6A CN109509809B (zh) | 2017-09-14 | 2017-09-14 | 一种红外焦平面探测器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN109509809A CN109509809A (zh) | 2019-03-22 |
CN109509809B true CN109509809B (zh) | 2022-03-18 |
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CN201710825905.6A Active CN109509809B (zh) | 2017-09-14 | 2017-09-14 | 一种红外焦平面探测器及其制备方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113013289A (zh) * | 2021-02-19 | 2021-06-22 | 中国科学院半导体研究所 | GaSb焦平面红外探测器的制备方法及GaSb焦平面红外探测器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198069A (en) * | 1989-12-04 | 1993-03-30 | Loral Infrared & Imaging Systems, Inc. | Method for fabricating buttable epitaxial infrared detector arrays by dimensionally controlled cleaving of single crystal substrates |
CN1925128A (zh) * | 2005-08-30 | 2007-03-07 | 中美矽晶制品股份有限公司 | 复合晶片结构的制造方法 |
CN101681890A (zh) * | 2007-05-10 | 2010-03-24 | 国际商业机器公司 | 抑制因切割和beol处理引起的ic器件损伤的方法 |
CN106342344B (zh) * | 2009-10-21 | 2013-05-15 | 中国空空导弹研究院 | 一种锑化铟红外焦平面阵列探测器芯片及其制造方法 |
CN104332695A (zh) * | 2014-08-12 | 2015-02-04 | 中国空空导弹研究院 | 一种制冷型太赫兹/红外叠层探测器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101871817B (zh) * | 2009-04-27 | 2012-07-18 | 昆明物理研究所 | 一种混成式热释电非制冷焦平面探测器及其制造工艺 |
-
2017
- 2017-09-14 CN CN201710825905.6A patent/CN109509809B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198069A (en) * | 1989-12-04 | 1993-03-30 | Loral Infrared & Imaging Systems, Inc. | Method for fabricating buttable epitaxial infrared detector arrays by dimensionally controlled cleaving of single crystal substrates |
CN1925128A (zh) * | 2005-08-30 | 2007-03-07 | 中美矽晶制品股份有限公司 | 复合晶片结构的制造方法 |
CN101681890A (zh) * | 2007-05-10 | 2010-03-24 | 国际商业机器公司 | 抑制因切割和beol处理引起的ic器件损伤的方法 |
CN106342344B (zh) * | 2009-10-21 | 2013-05-15 | 中国空空导弹研究院 | 一种锑化铟红外焦平面阵列探测器芯片及其制造方法 |
CN104332695A (zh) * | 2014-08-12 | 2015-02-04 | 中国空空导弹研究院 | 一种制冷型太赫兹/红外叠层探测器 |
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CN109509809A (zh) | 2019-03-22 |
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