CN109487333A - 籽晶、直拉法制备单晶硅的方法和单晶硅 - Google Patents
籽晶、直拉法制备单晶硅的方法和单晶硅 Download PDFInfo
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- CN109487333A CN109487333A CN201811587812.5A CN201811587812A CN109487333A CN 109487333 A CN109487333 A CN 109487333A CN 201811587812 A CN201811587812 A CN 201811587812A CN 109487333 A CN109487333 A CN 109487333A
- Authority
- CN
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- Prior art keywords
- seed crystal
- silicon
- dopant
- hole
- crystal according
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- Pending
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- 239000013078 crystal Substances 0.000 title claims abstract description 125
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 105
- 239000010703 silicon Substances 0.000 claims abstract description 105
- 239000002019 doping agent Substances 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 104
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910021478 group 5 element Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 6
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000013312 flour Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 30
- 229910052786 argon Inorganic materials 0.000 abstract description 15
- 239000007789 gas Substances 0.000 abstract description 15
- 238000005086 pumping Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000010891 electric arc Methods 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 12
- 239000003708 ampul Substances 0.000 description 11
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 8
- 238000002156 mixing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- -1 specifically Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
头端电阻率异常率 | 打火百分比 | |
实施例1 | 0.53% | --- |
实施例2 | 0% | --- |
实施例3 | 0.79% | --- |
实施例4 | 0.625% | --- |
实施例5 | --- | 0% |
对比例1 | 1.09% | --- |
对比例2 | 1.63% | --- |
对比例3 | 0.97% | --- |
对比例4 | 1.16% | --- |
对比例5 | --- | 48% |
Claims (21)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811587812.5A CN109487333A (zh) | 2018-12-25 | 2018-12-25 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
US16/966,905 US20210363659A1 (en) | 2018-12-25 | 2019-12-20 | Seed Crystal, Method for Preparing Monocrystal Silicon by Czochralski Method and Monocrystal Silicon |
PCT/CN2019/126987 WO2020135255A1 (zh) | 2018-12-25 | 2019-12-20 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811587812.5A CN109487333A (zh) | 2018-12-25 | 2018-12-25 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
Publications (1)
Publication Number | Publication Date |
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CN109487333A true CN109487333A (zh) | 2019-03-19 |
Family
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Family Applications (1)
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CN201811587812.5A Pending CN109487333A (zh) | 2018-12-25 | 2018-12-25 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
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CN (1) | CN109487333A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020135255A1 (zh) * | 2018-12-25 | 2020-07-02 | 徐州鑫晶半导体科技有限公司 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
CN114808112A (zh) * | 2022-03-31 | 2022-07-29 | 上海新昇半导体科技有限公司 | 一种单晶生长方法及晶圆 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62153188A (ja) * | 1985-12-27 | 1987-07-08 | Mitsubishi Metal Corp | ド−ピングされた単結晶の製造方法 |
US5406905A (en) * | 1993-05-28 | 1995-04-18 | Simco/Ramic Corporation | Cast dopant for crystal growing |
US6171393B1 (en) * | 1998-02-18 | 2001-01-09 | Komatsu Electronic Metals Co., Ltd. | Seed crystal and method of manufacturing single crystal |
CN1337476A (zh) * | 2000-08-16 | 2002-02-27 | 浙江大学 | 直拉硅单晶生长的重掺杂方法 |
JP2004010460A (ja) * | 2002-06-11 | 2004-01-15 | Toshiba Ceramics Co Ltd | 種子結晶 |
CN102409395A (zh) * | 2011-11-15 | 2012-04-11 | 浙江长兴众成电子有限公司 | 一种直拉硅单晶的镓元素掺杂装置及其掺杂方法 |
CN209568172U (zh) * | 2018-12-25 | 2019-11-01 | 徐州鑫晶半导体科技有限公司 | 籽晶 |
-
2018
- 2018-12-25 CN CN201811587812.5A patent/CN109487333A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62153188A (ja) * | 1985-12-27 | 1987-07-08 | Mitsubishi Metal Corp | ド−ピングされた単結晶の製造方法 |
US5406905A (en) * | 1993-05-28 | 1995-04-18 | Simco/Ramic Corporation | Cast dopant for crystal growing |
US6171393B1 (en) * | 1998-02-18 | 2001-01-09 | Komatsu Electronic Metals Co., Ltd. | Seed crystal and method of manufacturing single crystal |
CN1337476A (zh) * | 2000-08-16 | 2002-02-27 | 浙江大学 | 直拉硅单晶生长的重掺杂方法 |
JP2004010460A (ja) * | 2002-06-11 | 2004-01-15 | Toshiba Ceramics Co Ltd | 種子結晶 |
CN102409395A (zh) * | 2011-11-15 | 2012-04-11 | 浙江长兴众成电子有限公司 | 一种直拉硅单晶的镓元素掺杂装置及其掺杂方法 |
CN209568172U (zh) * | 2018-12-25 | 2019-11-01 | 徐州鑫晶半导体科技有限公司 | 籽晶 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020135255A1 (zh) * | 2018-12-25 | 2020-07-02 | 徐州鑫晶半导体科技有限公司 | 籽晶、直拉法制备单晶硅的方法和单晶硅 |
CN114808112A (zh) * | 2022-03-31 | 2022-07-29 | 上海新昇半导体科技有限公司 | 一种单晶生长方法及晶圆 |
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PB01 | Publication | ||
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.66, Yangshan Road, Xuzhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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TA01 | Transfer of patent application right |
Effective date of registration: 20230506 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |