CN102168302B - 一种用于生产直拉硅单晶的双石英坩埚装置及方法 - Google Patents
一种用于生产直拉硅单晶的双石英坩埚装置及方法 Download PDFInfo
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- CN102168302B CN102168302B CN 201110092539 CN201110092539A CN102168302B CN 102168302 B CN102168302 B CN 102168302B CN 201110092539 CN201110092539 CN 201110092539 CN 201110092539 A CN201110092539 A CN 201110092539A CN 102168302 B CN102168302 B CN 102168302B
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CN102168302B true CN102168302B (zh) | 2012-11-07 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102534753A (zh) * | 2012-03-08 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | 一种有效提高区熔硅单晶径向电阻率均匀性的直拉区熔气掺法 |
US9476141B2 (en) * | 2014-07-25 | 2016-10-25 | Sunedison, Inc. | Weir for inhibiting melt contamination |
CN104726930B (zh) * | 2015-03-13 | 2017-10-20 | 西安交通大学 | 一种在熔体区域具有搅拌环的直拉法单晶硅生长装置 |
CN115478319B (zh) * | 2022-09-21 | 2024-06-04 | 西安奕斯伟材料科技股份有限公司 | 石英坩埚、坩埚组件和单晶炉 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2087322U (zh) * | 1991-03-21 | 1991-10-23 | 北京有色金属研究总院 | 制备半导体单晶用的双层坩埚 |
US5069741A (en) * | 1987-03-20 | 1991-12-03 | Mitsubishi Kinzoku Kabushiki Kaisha | Method of manufacturing quartz double crucible assembly |
CN1065105A (zh) * | 1991-03-21 | 1992-10-07 | 北京有色金属研究总院 | 制备半导体单晶用的双层坩埚 |
CN1556256A (zh) * | 2003-12-30 | 2004-12-22 | 宁波立立电子股份有限公司 | 用于八英寸重掺砷直拉硅单晶制造的上部热场 |
CN1696355A (zh) * | 2004-05-11 | 2005-11-16 | 上海卡姆丹克半导体有限公司 | 一种拉制硅单晶工艺方法 |
CN101148777A (zh) * | 2007-07-19 | 2008-03-26 | 任丙彦 | 直拉法生长掺镓硅单晶的方法和装置 |
CN101717993A (zh) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | 直拉重掺锑单晶的掺杂方法及掺杂装置 |
CN202099408U (zh) * | 2011-05-12 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用于生产直拉硅单晶的双石英坩埚装置 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5069741A (en) * | 1987-03-20 | 1991-12-03 | Mitsubishi Kinzoku Kabushiki Kaisha | Method of manufacturing quartz double crucible assembly |
CN2087322U (zh) * | 1991-03-21 | 1991-10-23 | 北京有色金属研究总院 | 制备半导体单晶用的双层坩埚 |
CN1065105A (zh) * | 1991-03-21 | 1992-10-07 | 北京有色金属研究总院 | 制备半导体单晶用的双层坩埚 |
CN1556256A (zh) * | 2003-12-30 | 2004-12-22 | 宁波立立电子股份有限公司 | 用于八英寸重掺砷直拉硅单晶制造的上部热场 |
CN1696355A (zh) * | 2004-05-11 | 2005-11-16 | 上海卡姆丹克半导体有限公司 | 一种拉制硅单晶工艺方法 |
CN101148777A (zh) * | 2007-07-19 | 2008-03-26 | 任丙彦 | 直拉法生长掺镓硅单晶的方法和装置 |
CN101717993A (zh) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | 直拉重掺锑单晶的掺杂方法及掺杂装置 |
CN202099408U (zh) * | 2011-05-12 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用于生产直拉硅单晶的双石英坩埚装置 |
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