Method for improving reliability of semiconductor device packaged by epoxy resin composition
Technical Field
The present invention relates to a method for improving the reliability of a semiconductor device encapsulated with an epoxy resin composition.
Background
In recent years, the semiconductor industry is rapidly developed, electronic products are used everywhere in life, but civil semiconductor products are poor in reliability and short in service life. Electronic products are increasingly demanded, and thus reliability of consumer semiconductors is increasingly demanded. The civilian semiconductors are basically packaged using epoxy resin compositions, which are inherently less reliable than metal and ceramic packages due to cost, material usage, formulation, and the like.
The conventional semiconductor packaging method can only improve the reliability of the semiconductor device by improving the reliability of the epoxy resin composition, but cannot meet the requirements of the market on the reliability of the semiconductor due to the influence of price. Research on packaging methods becomes an important research project of the current packaging market.
Disclosure of Invention
The invention aims to solve the problems of high overall water absorption rate, poor electrical quality of finished products after reliability assessment of the existing semiconductor packaging method by using a novel molding packaging method and using an epoxy resin composition with poor reliability level.
The technical scheme of the invention is as follows:
a method for improving the reliability of a semiconductor device encapsulated by an epoxy resin composition comprises the following main steps: and (3) spraying a liquid organic substance on the semiconductor device packaged by the epoxy resin composition, standing for 10-60min at normal temperature, and curing for 1-3h at 150-180 ℃.
The epoxy resin composition for packaging semiconductors comprises the following components in percentage by weight:
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the epoxy resin is a monomer, oligomer or polymer having 2 or more epoxy groups in 1 epoxy molecule, and the molecular weight and molecular structure thereof are not particularly limited. The epoxy resin is one or more selected from o-cresol formaldehyde epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, linear phenolic epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, alicyclic epoxy resin and heterocyclic type epoxy resin.
The curing agent phenolic resin is a monomer, an oligomer or a polymer with more than 2 hydroxyl groups in 1 phenolic molecule, and the molecular weight and the molecular structure are not particularly limited. The phenolic resin can be selected from one or more of phenol novolac resin and derivatives thereof, cresol novolac resin and derivatives thereof, monohydroxy or dihydroxynaphthalene novolac resin and derivatives thereof, condensate of paraxylene and phenol or naphthol, copolymer of dicyclopentadiene and phenol, and the like.
The inorganic filler is not particularly limited. The inorganic filler can be one or more of silicon dioxide micropowder, aluminum oxide micropowder, titanium oxide micropowder, silicon nitride micropowder, aluminum nitride micropowder and the like. The silica fine powder may be a crystalline silica fine powder or a fused silica fine powder; the fused silica micropowder may be an angular micropowder or a spherical micropowder. Among them, a spherical fused silica fine powder is preferably used. The above-mentioned crystalline silica fine powder and fused silica fine powder may be used alone or in combination. The surface of the fine silica powder may be subjected to surface treatment (high-speed stirring and mixing) using a silane coupling agent.
The curing accelerator is not particularly limited as long as it can promote the curing reaction of the epoxy group and the phenolic hydroxyl group. The curing accelerator is generally present in the composition in an amount of from 0.16 to 0.8wt%; one or more selected from imidazole compounds, tertiary amine compounds, organic phosphine compounds, and the like.
The imidazole compound is one or more selected from 2-methylimidazole, 2, 4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2- (heptadecyl) imidazole and the like.
The tertiary amine compound is selected from one or more of triethylamine benzyl dimethylamine, alpha-methyl Jier methylamine, 2- (dimethylaminomethyl) phenol, 2,4, 6-tris (dimethylaminomethyl) phenol, 1, 8-diazabicyclo (5, 4, 0) undecene-7 and the like.
The organic phosphine compound is selected from one or more of triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine and the like.
The release agent is generally contained in the composition in an amount of 0.3 to 0.5wt%; the preferred content is 0.4wt%. Can be selected from one or more of carnauba wax, synthetic wax and mineral wax.
The low stress modifier is generally present in the composition in an amount of from 0.7 to 0.9wt%; the preferred content is 0.8wt%. Such as liquid silicone oil, silicone rubber powder, or mixtures thereof, and the like.
The colorant is generally present in the composition in an amount of from 0.4 to 0.6wt%; the preferred content is 0.5% by weight. Such as carbon black.
The flame retardant is generally present in the composition in an amount of 0.5 to 3wt% and comprises a mixture of brominated epoxy resin and antimony trioxide, wherein the mass ratio of brominated epoxy resin to antimony trioxide is 5:1.
The content of the silane coupling agent in the composition is generally 0.4-0.6 wt%; the preferred content is 0.5% by weight. Can be selected from one or more of gamma-epoxypropyl ether trimethoxy silane, gamma-aminopropyl triethoxy silane, gamma-mercapto propyl trimethoxy silane and gamma-aminopropyl trimethoxy silane.
The epoxy resin composition for semiconductor encapsulation of the present invention is commercially available from various raw materials and products involved in the encapsulation process.
The technical contribution of the invention is as follows: the surface of the semiconductor device encapsulated with the epoxy resin composition is sprayed with a liquid organic substance, thereby improving the reliability of the semiconductor device. The liquid organic main component is an organic matter containing silicon and nitrogen, and after heating and solidifying, a film is formed on the surface of the device or object, and the film has a certain moisture blocking effect, so that the water absorption rate of the semiconductor device is greatly reduced, and the reliability of the semiconductor device is improved.
The semiconductor packaging method provided by the invention can obtain a semiconductor packaging device with higher reliability and moisture resistance by using the epoxy resin composition with poor ordinary reliability and treating a liquid organic matter.
Detailed Description
The present invention is further described below with reference to examples, which are not to be construed as limiting the invention, but rather, it is intended that all such insubstantial variations and modifications be included within the scope of the invention as defined by the claims.
The epoxy resin composition in the examples comprises the following components:
the liquid organic matter is KH-S9660 (manufactured by Beijing Kogyo New Material technology Co., ltd., commercially available to those skilled in the art)
O-cresol formaldehyde epoxy resin A1 (Japanese DIC Corporation "N-665")
Phenol novolac resin B1 (Japanese DIC Corporation "TD-2131")
2-methylimidazole C1
1, 8-diazabicyclo (5, 4, 0) undecene-7C 2
Silica micropowder D (D50 25 μm)
Carnauba wax E
Gamma-epoxypropyl propyl ether trimethoxy silane F
Carbon black G
Liquid silicone oil H1
Silicone rubber powder H2
Mixtures of brominated epoxy resins and antimony trioxide (mass ratio 5:1) I
Biphenyl type epoxy resin A2 (Japan Epoxy Resins co., ltd. Product "YX-4000H")
Dicyclopentadiene type epoxy resin A3 (HP-7200 manufactured by DIC Corporation of Japan)
Phenol alkyl phenol resin (phenol novolac resin derivative) B2 (Mitsui Chemicals, inc.; product of XLC-4L)
Triphenylphosphine C3
Example 1
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was allowed to stand at room temperature for 10min and cured at 150℃for 1h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 2
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was allowed to stand at room temperature for 30min and cured at 150℃for 1h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 3
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was left to stand at room temperature for 60min and cured at 150℃for 1h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 4
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was allowed to stand at room temperature for 50min and cured at 160℃for 2h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 5
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was left to stand at normal temperature for 60min and cured at 160℃for 1h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 6
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product is kept stand for 10min at normal temperature and is solidified for 1h at 180 ℃.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 7
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was left to stand at room temperature for 20min and cured at 150℃for 3h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 8
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was allowed to stand at room temperature for 30min and cured at 170℃for 2h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 9
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was allowed to stand at room temperature for 30min and cured at 150℃for 3h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Example 10
Uniformly spraying a liquid organic matter on a SOP-8 device by using a spray gun of the SOP-8 product of the semiconductor device packaged by using the epoxy resin composition; the sprayed product was left to stand at normal temperature for 40min and cured at 160℃for 3h.
The formulation of the epoxy resin composition is shown in Table 1, and the results of performance evaluation of the treated semiconductor package SOP-8 are shown in Table 1.
Comparative examples 1 to 10
And (3) packaging the normal semiconductor frame SOP-8 semi-finished product with solid crystal and well wire bonding directly by using an epoxy resin composition.
The formulation of the epoxy resin composition was the same as in examples 1 to 10, the performance evaluation method was the same as in the above examples, and the performance evaluation results are shown in Table 2.
Table 1: examples 1 to 10 evaluation results of SOP-8 Performance of semiconductor devices and formulation composition of epoxy resin composition (in weight percent)
Table 2: results of evaluation of Performance of comparative examples
As can be seen from the performance evaluation results of the above examples and comparative examples, the semiconductor device obtained by using the method of the present invention can significantly reduce the water absorption rate of the semiconductor device, and the reliability of the semiconductor device obtained by using the method of the present invention, that is, the yield after MSL3 level inspection, is higher, compared with the semiconductor device prepared by using the conventional packaging method.