CN109462386A - A kind of SiC MOSFET driving circuit applied to hot environment - Google Patents
A kind of SiC MOSFET driving circuit applied to hot environment Download PDFInfo
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- CN109462386A CN109462386A CN201811048611.8A CN201811048611A CN109462386A CN 109462386 A CN109462386 A CN 109462386A CN 201811048611 A CN201811048611 A CN 201811048611A CN 109462386 A CN109462386 A CN 109462386A
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- 238000001514 detection method Methods 0.000 claims abstract description 48
- 239000003990 capacitor Substances 0.000 claims description 74
- 238000002955 isolation Methods 0.000 claims description 30
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- 238000004519 manufacturing process Methods 0.000 abstract description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 61
- 229910010271 silicon carbide Inorganic materials 0.000 description 61
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
The present invention relates to a kind of SiC MOSFET driving circuits applied to hot environment, comprising: power supply, main driving circuit, Drive Protecting Circuit and SiC MOSFET；Wherein, power supply connects main driving circuit and Drive Protecting Circuit；Main driving circuit connects SiC MOSFET；Drive Protecting Circuit connects main driving circuit and a kind of SiC MOSFET SiC MOSFET driving circuit applied to hot environment provided by the invention solves the contradiction in level shift circuit between triode switch speed and collector resistance fever；The rise time and fall time for reducing outputting drive voltage, can also provide the driving signal of higher frequency for SiC MOSFET.Undervoltage detection circuit structure greatly simplifies, and improves circuit reliability in a high temperauture environment, reduces circuit manufacturing cost.By being provided with protection delay in current foldback circuit, to prevent the false triggering of current foldback circuit.
Description
Technical Field
The invention belongs to the technical field of electronic power, and particularly relates to a SiC MOSFET drive circuit applied to a high-temperature environment.
Background
The drive circuit for the switching devices is an important component of all power converter architectures. The driving signal conversion circuit provides enough driving signals for the switching device, and the switching function of the switching device is realized by converting the control signals with smaller sub-values into the driving signals with the sub-values meeting the requirements of the driven switching device.
The traditional silicon-based switching device generally works in the environment of less than 150 ℃ and cannot work in the environment of more than 150 ℃. Silicon carbide switching devices can operate in higher temperature environments and have faster switching speeds than silicon-based switching devices. Therefore, for the driving circuit to work in a high temperature environment, it must have the characteristics of high temperature resistance and be capable of outputting a high-frequency driving signal, which requires that the duration of the rising edge and the falling edge of the driving signal be as short as possible. The prior art provides a design method for a SiC MOSFET drive circuit at high temperature, wherein transformer isolation is adopted in the drive circuit, an input signal is distorted after being isolated by a transformer, the distorted input signal is restored by connecting an interlocking circuit to the secondary side of the transformer, then a signal secondary value is raised to a level capable of driving the SiC MOSFET by a level shift circuit, and finally the drive capability of the circuit is enhanced by a totem-pole circuit.
However, the disadvantages of the prior art for the SiC MOSFET driving circuit at high temperature are: 1) The transmission delay of the circuit is long; 2) there is room for further reduction in the rise time and fall time of the output drive voltage.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a SiCMOSFET driving circuit applied to a high temperature environment. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a SiC MOSFET drive circuit applied to a high-temperature environment, which comprises: the drive circuit comprises a power supply, a main drive circuit, a drive protection circuit and a SiC MOSFET; wherein,
the power supply is connected with the main driving circuit and the driving protection circuit and is used for providing voltage signals for the main driving circuit and the driving protection circuit;
the main driving circuit is connected with the SiC MOSFET and used for amplifying and outputting the received control signal;
the drive protection circuit is connected with the main drive circuit and the SiC MOSFET and used for detecting the voltage signal of the main drive circuit and turning on or turning off the SiC MOSFET according to the detection result.
In one embodiment of the present invention, the main driving circuit includes: the circuit comprises a transformer isolation circuit, a driving auxiliary circuit, a level shift circuit, a totem-pole circuit, an on resistor and an off resistor; wherein,
the transformer isolation circuit is connected with the level shift circuit;
the driving auxiliary circuit is connected with the transformer isolation circuit, the level shift circuit, the totem-pole circuit and the source electrode of the SiC MOSFET;
the level shift circuit is connected with the totem-pole circuit;
the totem-pole circuit is connected with the turn-on resistor and the turn-off resistor;
the turn-on resistor and the turn-off resistor are both connected with the grid electrode of the SiC MOSFET;
the drive protection circuit includes: the overvoltage protection circuit comprises an undervoltage detection circuit, an overcurrent detection circuit, a protection execution circuit and an overvoltage suppression circuit; wherein,
the power supply comprises a first voltage source V1 and the second voltage source V2;
the undervoltage detection circuit is connected with the first voltage source V1, the second voltage source V2 and the protection execution circuit;
the overcurrent detection circuit is connected with the level shift circuit, the second voltage source V2, the protection execution circuit and the drain electrode of the SiC MOSFET;
the protection execution circuit is connected with the first voltage source V1, the level shift circuit and the driving auxiliary circuit;
the overvoltage suppression circuit is connected with the grid electrode and the drain electrode of the SiC MOSFET.
In one embodiment of the present invention, the transformer isolation circuit includes: a capacitor C1, a capacitor C2, a capacitor C3, a transformer primary side L1, a transformer secondary side L2, a diode D1 and a resistor R4; wherein,
the capacitor C1 is connected with the upper end of the primary side L1 of the transformer;
the input end of the transformer isolation circuit is connected between the lower end of the primary side L1 of the transformer and the capacitor C1;
the capacitor C2 is connected with the upper end of the transformer secondary side L2, and the capacitor C2 and the diode D1 are connected in series at two ends of the transformer secondary side L2;
the lower end of the secondary side L2 of the transformer is connected with a grounding terminal;
the capacitor C3 is connected in parallel with the resistor R4 and then connected between the capacitor C2 and the output terminal a of the transformer isolation circuit.
In one embodiment of the present invention, the driving assistance circuit includes: the transformer secondary side L3, the resistor R2, the resistor R5, the resistor R6, the triode Q8 and the triode Q12; wherein,
the lower end of the secondary side L3 of the transformer is connected with the lower end of the secondary side L2 of the transformer, the resistor R6, the emitter of the triode Q12, the emitter of the triode Q8 and the first output end B of the driving auxiliary circuit;
the upper end of the secondary side L3 of the transformer is connected with the resistor R6, the collector of the triode Q12, the base of the triode Q8 and the second output end C of the driving auxiliary circuit through the resistor R5;
the input end of the driving auxiliary circuit is connected with the source electrode of the SiC MOSFET and the first voltage source V1, and the input end of the driving auxiliary circuit is connected with the emitter electrode of the triode Q8 and the output end of the transformer isolation circuit through the resistor R2.
In one embodiment of the present invention, the level shift circuit includes: the transistor Q1, the transistor Q2, the transistor Q6, the transistor Q7, the resistor R1, the resistor R3, the resistor R7 and the resistor R8; wherein,
the base electrode of the triode Q6 is connected with the second output end C of the driving auxiliary circuit;
the input end of the level shift circuit is connected with the second voltage source V2, the collector electrode of the triode Q1 and the emitter electrode of the triode Q2, and the input end of the level shift circuit is connected with the base electrode of the triode Q1 and the collector electrode of the triode Q2 through the resistor R2;
the emitter of the triode Q1 is connected with the base of the triode Q2 through the resistor R3;
the emitter of the transistor Q1 is connected with the first output end B of the driving auxiliary circuit through the resistor R7;
the base electrode of the triode Q7 is connected with the output end A of the transformer isolation circuit, and the emitter electrode of the triode Q7 is connected with the first output end B of the driving auxiliary circuit;
the resistor R8 is connected between the first output end B of the driving auxiliary circuit and the output end A of the transformer isolation circuit;
the collector of the transistor Q7 is connected to the collector of the transistor Q2, and then to the output Vg of the level shift circuit.
In one embodiment of the invention, the totem-pole circuit comprises: a transistor Q3, a transistor Q4, a transistor Q5, a transistor Q9, a transistor Q10, and a transistor Q11; wherein,
an output end Vg of the level shift circuit is connected with the base electrode of the triode Q3 and the base electrode of the triode Q9;
the input end of the point shift circuit is connected with the collector electrode of the triode Q3, the collector electrode of the triode Q4 and the collector electrode of the triode Q5;
the emitter of the triode Q3 is connected with the emitter of the triode Q9, the base of the triode Q4, the base of the triode Q5, the base of the triode Q10 and the base of the triode Q11;
the first output end B of the drive auxiliary circuit is connected with the collector electrode of the triode Q9, the collector electrode of the triode Q10 and the collector electrode of the triode Q11;
after the emitter of the triode Q4 is connected with the emitter of the triode Q5, the emitter is connected to the gate of the SiC MOSFET through the on-resistor Ron;
after the emitter of the transistor Q10 is connected to the emitter of the transistor Q11, the transistor Q10 is connected to the gate of the SiC MOSFET through the off-resistance Roff.
In one embodiment of the present invention, the brown-out detection circuit includes: the circuit comprises a triode Q15, a triode Q21, a voltage regulator tube D3, a voltage regulator tube D10, a diode D4, a diode D12, a resistor R11, a resistor R16, a resistor R21, a resistor R25, a resistor R29 and a resistor R32; wherein,
the resistor R25 and the resistor R32 are connected in series and then connected between the base electrode and the emitter electrode of the triode Q21;
the node where the resistor R25 and the resistor R32 are connected is connected to the first voltage source V1 through a voltage regulator tube D10;
the collector of the triode Q21 is connected to the second voltage source V2 through a resistor R16;
the collector of the triode Q21 is connected to the output end of the undervoltage detection circuit through a diode D12;
the emitter of the triode Q21 is connected with the emitter of the triode Q15 and then is connected to the ground terminal;
the resistor R29 is connected in series with the resistor R21 and then is connected between the base electrode and the emitter electrode of the triode Q15;
the node where the resistor R29 and the resistor R21 are connected is connected to the first voltage source V1 through a voltage regulator tube D3;
the collector of the triode Q15 is connected to the second voltage source V2 through the resistor R11;
the collector of the transistor Q15 is connected to the output of the brown-out detection circuit through the diode D4.
In one embodiment of the present invention, the overcurrent detection circuit includes: the circuit comprises a triode Q18, a diode D5, a diode D1, a diode D19, a voltage regulator tube D17, a resistor R12, a resistor R20, a resistor R27 and a capacitor C7; wherein,
the resistor R27, the capacitor C7 and the voltage regulator tube D17 are sequentially connected in series and then connected between the collector and the base of the triode Q18;
the node of the resistor R27 connected with the capacitor C7 is connected with the output end Vg of the level shift circuit through a diode D15;
the node of the resistor R27 connected with the capacitor C7 is connected with the output end of the over-current detection circuit through a diode D19;
the node of the capacitor C7 connected with the stabilivolt D17 is connected to the ground;
the resistor R20 is connected between the base electrode and the emitter electrode of the triode Q18;
the emitter of the transistor Q18 is connected to the second power supply through a resistor R12;
the emitter of the transistor Q18 is connected to the drain of the SiC MOSFET through a diode D5.
In one embodiment of the present invention, the protection performing circuit includes: an initialization sub-circuit, a latch sub-circuit, a signal execution circuit and a prevention sub-circuit; wherein,
the initialization sub-circuit is connected with the first voltage source V1, the latch sub-circuit, the signal execution sub-circuit and the prevention sub-circuit;
the latch sub-circuit is connected with the undervoltage detection circuit, the first voltage source V1 and the signal execution sub-circuit;
the signal execution sub-circuit is connected with the level shift circuit and the prevention sub-circuit;
the prevention sub-circuit is connected with the level shift circuit and the driving auxiliary circuit.
In one embodiment of the invention, the overvoltage suppression circuit comprises: the circuit comprises a triode Q20, a voltage regulator tube D2, a voltage regulator tube D11, a diode D14, a diode D16, a diode D18, a diode D20, a resistor R22, a resistor R23, a resistor R24, a resistor R34 and a capacitor C6; wherein,
the diode D18, the capacitor C6, the diode D20 and the resistor R34 are connected in series in sequence and then connected between the collector and the base of the triode Q20;
the diode D18 and a node connected with the capacitor C6 are connected to an emitter of a triode Q20 through a diode D14 and a resistor R22 in sequence;
the voltage-stabilizing tube D11 is connected between the emitter and the collector of the triode;
the node of the capacitor C6 connected with the diode D20 is connected to the gate of the SiC MOSFET through a diode D16 and a resistor R23 in sequence;
the node where the diode D20 is connected with the resistor R34 is connected to the ground terminal;
the resistor R24 is connected between the emitter and the base of the triode Q20;
the emitter of the triode Q20 is connected to the drain of the SiC MOSFET through a voltage regulator tube D2.
Compared with the prior art, the invention has the beneficial effects that:
the SiC MOSFET drive circuit applied to the high-temperature environment solves the contradiction between the switching speed of a triode and the heating of a collector resistor in a level shift circuit; the rising time and the falling time of the output driving voltage are greatly reduced, and a driving signal with higher frequency can be provided for the SiC MOSFET. The structure of the undervoltage detection circuit is greatly simplified, the reliability of the circuit in a high-temperature environment is improved, and the manufacturing cost of the circuit is reduced. The overcurrent protection circuit is provided with protection time delay to prevent the false triggering of the overcurrent protection circuit.
Drawings
FIG. 1 is a schematic structural diagram of a SiC MOSFET driver circuit applied in a high temperature environment according to the present invention;
FIG. 2 is a schematic diagram of a main driving circuit provided in the present invention;
FIG. 3 is a schematic diagram of the under-voltage detection circuit provided by the present invention;
fig. 4 is a schematic diagram of an over-current detection circuit according to the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1 to 4, fig. 1 is a schematic structural diagram of a SiC MOSFET driving circuit applied in a high temperature environment according to the present invention; FIG. 2 is a schematic diagram of a main driving circuit provided in the present invention; FIG. 3 is a schematic diagram of the under-voltage detection circuit provided by the present invention; fig. 4 is a schematic diagram of an over-current detection circuit according to the present invention.
As shown in fig. 1, a SiC MOSFET driver circuit applied to a high temperature environment includes: the drive circuit comprises a power supply, a main drive circuit, a drive protection circuit and a SiC MOSFET; wherein,
the power supply is connected with the main drive circuit and the drive protection circuit and is used for providing voltage signals for the main drive circuit and the drive protection circuit;
the main driving circuit is connected with the SiC MOSFET and is used for amplifying and outputting the received control signal, particularly for amplifying a sub-value of the control signal input into the main driving circuit and outputting a driving signal with a steep rising edge and a steep falling edge;
the drive protection circuit is respectively connected with the main drive circuit and the SiC MOSFET and used for detecting the voltage signal of the main drive circuit and turning on or turning off the SiC MOSFET according to the detection result.
Further, the main drive circuit includes: the circuit comprises a transformer isolation circuit, a driving auxiliary circuit, a level shift circuit, a totem-pole circuit, an on resistor Ron and an off resistor Roff; wherein,
the transformer isolation circuit is connected with the level shift circuit and used for isolating the electric appliance;
the driving auxiliary circuit is respectively connected with the transformer isolation circuit, the level shift circuit, the totem-pole circuit and the source electrode of the SiCMOS and is used for assisting the output of the transformer isolation circuit;
the level shift circuit is connected with the totem-pole circuit and is used for
The totem-pole circuit is respectively connected with the turn-on resistor and the turn-off resistor; for boosting the drive signal;
the turn-on resistor and the turn-off resistor are respectively connected with the grid electrode of the SiC MOSFET;
the drive protection circuit includes: the overvoltage protection circuit comprises an undervoltage detection circuit, an overcurrent detection circuit, a protection execution circuit and an overvoltage suppression circuit; wherein,
the power supply comprises a first voltage source V1 and a second voltage source V2,
the undervoltage detection circuit is respectively connected with the first voltage source V1, the second voltage source V2 and the protection execution circuit;
the overcurrent detection circuit is respectively connected with the level shift circuit, the second voltage source V2, the protection execution circuit and the drain electrode of the SiCMOS;
the protection execution circuit is respectively connected with the first voltage source V1, the level shift circuit and the drive auxiliary circuit;
the overvoltage suppression circuit is respectively connected with the grid electrode and the drain electrode of the SiC MOSFET.
Further, as shown in fig. 2, the transformer isolation circuit includes: a capacitor C1, a capacitor C2, a capacitor C3, a transformer primary side L1, a transformer secondary side L2, a diode D1 and a resistor R4; wherein,
the capacitor C1 is connected with the upper end of the primary side L1 of the transformer;
the input end of the transformer isolation circuit is connected between the lower end of a primary side L1 of the transformer and a capacitor C1; the control signal is input to the main driving circuit through the input end of the transformer isolation circuit;
the capacitor C2 is connected with the upper end of the secondary side L2 of the transformer, and the capacitor C2 and the diode D1 are connected with the two ends of the secondary side L2 of the transformer in series;
the lower end of the secondary side L2 of the transformer is connected with a grounding terminal;
the capacitor C3 is connected in parallel with the resistor R4 and then connected between the capacitor C2 and the output terminal a of the transformer isolation circuit.
Specifically, the capacitor C1 functions to filter out a dc component in the input control signal, and the capacitor C2 and the diode D1 function to complement the filtered dc component.
Further, the driving auxiliary circuit includes: the transformer secondary side L3, the resistor R2, the resistor R5, the resistor R6, the triode Q8 and the triode Q12; wherein,
the lower end of the secondary side L3 of the transformer is respectively connected with the lower end of the secondary side L2 of the transformer, the resistor R6, the emitter of the triode Q12, the emitter of the triode Q8 and the first output end B of the driving auxiliary circuit;
the upper end of the secondary side L3 of the transformer is respectively connected with a resistor R6, a collector of a triode Q12, a base of the triode Q8 and a second output end C of the driving auxiliary circuit through a resistor R5;
the input end of the driving auxiliary circuit is respectively connected with the source of the SiC MOSFET and a first voltage source V1, and the input end of the driving auxiliary circuit is respectively connected with the emitter of the triode Q8 and the output end of the transformer isolation circuit through a resistor R2.
Specifically, the drive assist circuit is used to prevent the SiC MOSFET from being turned on when there is no input control signal. And also to assist the transistor Q7 in turning it on and off.
Further, the level shift circuit includes: the transistor Q1, the transistor Q2, the transistor Q6, the transistor Q7, the resistor R1, the resistor R3, the resistor R7 and the resistor R8; wherein,
the base electrode of the triode Q6 is connected with the second output end C of the driving auxiliary circuit;
the input end of the level shift circuit is respectively connected with a second voltage source V2, the collector of the triode Q1 and the emitter of the triode Q2, and the input end of the level shift circuit is respectively connected with the base of the triode Q1 and the collector of the triode through a resistor R2;
the emitter of the triode Q1 is connected with the base of the triode Q2 through a resistor R3;
the emitter of the triode Q1 is connected with the first output end B of the driving auxiliary circuit through a resistor R7;
the base electrode of the triode Q7 is connected with the output end A of the transformer isolation circuit, and the emitter electrode of the triode Q7 is connected with the first output end B of the driving auxiliary circuit;
the resistor R8 is connected between the first output end B of the driving auxiliary circuit and the output end A of the transformer isolation circuit;
the collector of the transistor Q7 is connected to the collector of the transistor Q2, and then to the output Vg of the level shift circuit.
Specifically, the operating principle of the driving auxiliary circuit is as follows: when no input exists, the primary side L1, the secondary side L2 and the secondary side L3 of the transformer have no voltage, the triode Q8 is cut off, the first power supply V1 provides base current for the triode Q7 through the resistor R2, the triode Q7 is turned on, the output end Vg of the level shift circuit is pulled down, and therefore the driving signal is not output under the condition that no input control signal exists. Meanwhile, the driving auxiliary circuit has an auxiliary function on the switching process of the transistor Q7 under the condition of having an input control signal. In other words, in the process of turning on the transistor Q7, the first voltage source V1, the resistor R2 assist the secondary side L2 and the capacitor C2 to enable the transistor Q7 to be turned on quickly; when transistor Q7 is turned off, transistor Q8 turns on, providing a fast discharge loop for transistor Q7, causing transistor Q7 to turn off quickly.
Specifically, the operating principle of the level shift circuit is as follows: in the process of starting the triode Q7, the triode Q6 is cut off, the second voltage source V2 provides base current for the triode Q1 through the resistor R1, the triode Q1 is opened, the voltage of the emitter of the triode Q1 is raised to the second voltage source V2, at this time, the voltage of the emitter junction of the triode Q2 is 0, the triode Q2 is closed, and the output terminal Vg of the level shift circuit is pulled low; in the process of turning off the triode Q7, the triode Q6 is turned on, the base voltage of the triode Q1 is pulled down to the ground potential, the triode Q1 is turned off, the second voltage source V2 provides the base current of the Q2 through the resistor R3, the resistor R7 and the emitter junction of the triode Q2, the triode Q2 is turned on, and the output terminal Vg of the level shift circuit is pulled up.
Further, the totem-pole circuit includes: a transistor Q3, a transistor Q4, a transistor Q5, a transistor Q9, a transistor Q10, and a transistor Q11; wherein,
an output end Vg of the level shift circuit is respectively connected with a base electrode of the triode Q3 and a base electrode of the triode Q9;
the input end of the point shift circuit is respectively connected with the collector of a triode Q3, the collector of a triode Q4 and the collector of a triode Q5;
the emitter of the triode Q3 is respectively connected with the emitter of the triode Q9, the base of the triode Q4, the base of the triode Q5, the base of the triode Q10 and the base of the triode Q11;
the first output end B of the driving auxiliary circuit is respectively connected with the collector of the triode Q9, the collector of the triode Q10 and the collector of the triode Q11.
After the emitter of the triode Q4 is connected with the emitter of the triode Q5, the emitter is connected to the grid of the SiCSMOSFET through the open resistor Ron;
the emitter of the transistor Q10 is connected to the emitter of the transistor Q11, and then connected to the gate of the SiCMOSFET via a turn-off resistor Roff.
Specifically, the operating principle of the totem-pole circuit is as follows: when the output terminal Vg of the level shift circuit is high, the triode Q3 is turned on, the second voltage source V2 provides base currents for the triode Q4 and the triode Q5 through the triode Q3, the triode Q4 and the triode Q5 are turned on, and the gate potential of the SiC MOSFET is pulled high to the second voltage source V2; when the output end Vg of the level shift circuit is low, the triode Q9, the triode Q10 and the triode Q11 are conducted, and the grid potential of the SiC MOSFET is pulled down to the ground potential; the output voltage is high level, which is the difference V1 obtained by subtracting the first voltage source from the second voltage source V2, and the output voltage is negative first voltage source.
Specifically, the totem-pole circuit is used to enhance the driving capability of the main driving circuit. Preferably, the number of parallel groups of the totem-pole circuits can be adjusted according to specific needs.
Further, as shown in fig. 3, the brown-out detection circuit includes: the circuit comprises a triode Q15, a triode Q21, a voltage regulator tube D3, a voltage regulator tube D10, a diode D4, a diode D12, a resistor R11, a resistor R16, a resistor R21, a resistor R25, a resistor R29 and a resistor R32; wherein,
the resistor R25 and the resistor R32 are connected in series and then connected between the base electrode and the emitter electrode of the triode Q21;
the node where the resistor R25 and the resistor R32 are connected is connected to a first voltage source V1 through a voltage regulator tube D10;
the collector of the transistor Q21 is connected to a second voltage source V2 through a resistor R16;
the collector of the triode Q21 is connected to the output end of the undervoltage detection circuit through a diode D12;
the emitter of the triode Q21 is connected with the emitter of the triode Q15 and then is connected to the ground terminal;
the resistor R29 is connected in series with the resistor R21 and then is connected between the base electrode and the emitter electrode of the triode Q15;
the node where the resistor R29 and the resistor R21 are connected is connected to a first voltage source V1 through a voltage regulator tube D3;
the collector of the transistor Q15 is connected to a second voltage source V2 through a resistor R11;
the collector of transistor Q15 is connected to the output of the brown-out detection circuit through diode D4.
Specifically, the cathode of the diode D10 is connected to the first voltage source V1, the anode of the diode D10 is connected to the resistor R32 and the resistor R25, the other end of the resistor R25 is connected to the base of the transistor Q21, the emitter of the transistor Q21 is grounded, and the collector of the transistor Q21 is connected to the anode of the diode D12 and the resistor R16. The other end of the resistor R16 is connected with a second voltage source V2, the cathode of the diode D3 is connected with the second voltage source V2, the anode of the diode D3 is connected with the resistor R29 and the resistor R21, the other end of the resistor R21 is connected with the base of the triode Q15, the emitter of the triode Q15 is grounded, the collector of the triode Q15 is connected with the anode of the diode D4 and the resistor R11, and the other end of the resistor R11 is connected with the second voltage source V2. The cathode of the diode D4 is connected to the cathode of the diode D12 and to the output terminal of the undervoltage detection circuit, which is Fault1, and the output terminal is connected to the protection execution circuit. Collector of Q22 in the circuit.
Specifically, the transistor Q15 and the transistor Q21 are both PNP BJTs.
Specifically, when the first voltage source V1 is undervoltage, i.e., V1 is lower than the reference voltage value, the transistor Q21 is turned off, and the Fault1 is pulled high; when the second voltage source V2 is under-voltage, i.e. the second voltage source V2 is lower than the reference voltage, the transistor Q15 is turned off and the Fault1 is pulled high. The diode D4 and the diode D12 function to prevent the under-voltage detection circuit and the protection execution circuit from interfering with each other.
Further, as shown in fig. 4, the overcurrent detection circuit includes: the circuit comprises a triode Q18, a diode D5, a diode D1, a diode D19, a voltage regulator tube D17, a resistor R12, a resistor R20, a resistor R27 and a capacitor C7; wherein,
the resistor R27, the capacitor C7 and the voltage regulator tube D17 are sequentially connected in series and then connected between the collector and the base of the triode Q18;
the node of the resistor R27 connected with the capacitor C7 is connected with the output end Vg of the level shift circuit through a diode D15;
the node of the resistor R27 connected with the capacitor C7 is connected with the output end of the over-current detection circuit through a diode D19;
the node of the capacitor C7 connected with the stabilivolt D17 is connected to the ground terminal;
the resistor R20 is connected between the base electrode and the emitter electrode of the triode Q18;
the emitter of the transistor Q18 is connected to the second power supply through a resistor R12;
the emitter of transistor Q18 is connected to the drain of the SiC MOSFET through diode D5.
Specifically, the second voltage source V2 is connected to the anode of the diode D5, the emitter of the transistor Q18 and the resistor R20 through the resistor R2, the cathode of the diode D5 is connected to the drain of the SiC MOSFET, the resistor R20 is connected in parallel to the emitter junction of the transistor Q18, the cathode of the regulator D17 is connected to the base of the transistor Q18, the anode of the regulator D18 is connected to the capacitor C7 and to ground, the collector of the transistor Q18 is connected to the resistor R27, the resistor R27 is connected to the capacitor C7 and to the anodes of the diode D15 and the diode D19, the cathode of the diode D15 is connected to the output terminal Vg of the level shift circuit, that is, the collector of the Q7 in the main driving circuit is connected, and the cathode of the diode D19 is connected to the output terminal of the over.
Specifically, the overcurrent detection circuit is powered by the second voltage source V2, and when the output Vg of the level shift circuit is 0, the Fault2 is clamped to 0 potential. That is, no over-current detection is performed when the SiC MOSFET is turned off. When the output terminal Vg of the level shift circuit is at a high level, the diode D15 is turned off, and the output terminal Vg of the level shift circuit loses the clamping effect on Fault 2. Over-current detection is only performed when the SiC MOSFET is on. At the moment, if no overcurrent occurs, the anode potential of the diode D5 is clamped to about 2V by the drain voltage, and the voltage regulator tube D17 cannot be switched on, so that the triode Q18 has no base current, and the triode Q18 is cut off; the capacitor C7 will not be charged, and the Fault2 is invalid; if an overcurrent fault occurs at this time, and when the drain voltage V of the SiC MOSFET is higherDWhen the voltage is higher than the reference voltage value, the voltage regulator tube D17 is conducted, a channel of base current of the triode Q18 is generated, the triode Q18 is conducted, the capacitor C7 starts to charge, and when the voltage at the two ends of the capacitor C7 rises to 1.4V, the Fault2 rises to 0.7V and is latched by the protection logic circuit.
Specifically, the error-reporting delay is set by C7, and different error-reporting delays can be set by adjusting the values of the capacitor C7 and the resistor R27. This function is achieved by diode D15 because the drain current is only detected when the SiC MOSFET is on.
Further, the protection execution circuit includes: an initialization sub-circuit, a latch sub-circuit, a signal execution circuit and a prevention sub-circuit; wherein,
the initialization sub-circuit is connected with the first voltage source V1, the latch sub-circuit, the signal execution sub-circuit and the prevention sub-circuit;
the latch sub-circuit is connected with the undervoltage detection circuit, the first voltage source V1 and the signal execution sub-circuit;
the signal execution sub-circuit is connected with the level shift circuit and the prevention sub-circuit;
the prevention sub-circuit is connected with the level shift circuit and the driving auxiliary circuit.
Specifically, the initialization sub-circuit includes: the high-voltage power supply is characterized by comprising a capacitor C5, a resistor R33, a resistor R26, a triode Q16 and a triode Q22, wherein one end of the capacitor C5 is connected with a first voltage source V1, the other end of the capacitor C5 is connected with a resistor R26 and the resistor R33, the other end of the resistor R26 is connected with bases of the triode Q16 and the triode Q22, emitting electrodes of the triode Q16 and the triode Q22 are grounded, and a collector electrode of the triode Q16 is connected with a Fault2 and a collector electrode of the triode Q22 is connected with a Fault 1.
The latch sub-circuit includes: the high-voltage power supply comprises a triode Q14, a triode Q17, a resistor R10, a resistor R13, a resistor R18 and a resistor R14, wherein emitting electrodes of the triode Q14 and the triode Q17 are grounded, the resistor R13 is connected between a collector of the triode Q14 and a base of the triode Q17, the resistor R18 is connected between a base of the triode Q14 and a collector of the triode Q17, collectors of the triode Q14 and the triode Q17 are respectively connected with a resistor R10 and a resistor R14, and the other ends of the resistor R10 and the resistor R14 are connected with a first voltage source V1.
The signal execution sub-circuit includes: the diode D6, the diode D13, the resistor R30, the triode Q19 and the resistor R19, wherein the anode of the diode D6 is connected with the collector of the triode Q17, the anode of the diode D13 is connected with the collector of the triode Q22, and the diode D6 and the cathode of the diode D13 are connected together, connected with the base of the resistor R30 and the base of the triode Q19 and connected to the prevention sub-circuit. The other end of the resistor R30 is connected with the emitter of the transistor Q19 and is grounded, one end of the resistor R19 is connected with the collector of the transistor Q19, and the other end of the resistor R19 is connected with the collector of the transistor Q7 in the main driving circuit.
The prevention sub-circuit includes: the driving circuit comprises a resistor R15, a triode Q13, a resistor R31, a diode D7, a diode D8, a resistor R17, a diode D9 and a resistor R28, wherein the cathode of the diode D7 is connected with the cathode of a diode D6, the emitter of the triode Q13 is connected with a resistor R17 and is connected with a first voltage source V1, one end of a resistor R15 is connected with the base of the triode Q13, the other end of the resistor R15 is connected with the collector of the triode Q7 in the main driving circuit, and the other end of the resistor R17 is connected with the anodes of the diode D7, the diode D8 and a diode D9. The cathode of the diode D8 is connected to the collector of the transistor Q13 and one end of the resistor R31, and the other end of the resistor R31 is grounded. The cathode of the diode D9 is connected with the resistor R28, the base of the triode Q9 in the main driving circuit and one end of the resistor R28, and the other end of the resistor R28 is grounded.
Specifically, the protection execution circuit is configured to clear the Fault1 and the Fault2 at the moment when the main drive circuit is powered on. The latch sub-circuit has the function of latching the Fault2 signal once the overcurrent signal is generated, so that the Fault2 is always effective, and the Fault2 cannot be cleared until the power-off restart. The signal execution sub-circuit has the function that no matter under-voltage fault or over-current fault occurs, the triode Q19 is switched on, the voltage of the output end Vg of the level shift circuit is pulled down to the voltage of the first voltage source V1, then the triode Q7 in the main driving circuit is switched on, the voltage of the output end Vg of the level shift circuit is pulled down to 0, and two-step switching-off is achieved. The prevention subcircuit is used for preventing the VGS from jumping after the MOSFET is turned off in two steps after the fault occurs. The preventing subcircuit is used for preventing the gate-source voltage V of the SiC MOSFET after the two-step turn-off of the failed MOSFETGSA jump occurs.
Specifically, the overvoltage suppression circuit includes: the circuit comprises a triode Q20, a voltage regulator tube D2, a voltage regulator tube D11, a diode D14, a diode D16, a diode D18, a diode D20, a resistor R22, a resistor R23, a resistor R24, a resistor R34 and a capacitor C6; wherein,
the diode D18, the capacitor C6, the diode D20 and the resistor R34 are sequentially connected in series and then connected between the collector and the base of the triode Q20;
a node connected with the rest capacitor C6 of the diode D18 is connected to an emitter of the triode Q20 through a diode D14 and a resistor R22 in sequence;
the voltage-stabilizing tube D11 is connected between the emitter and the collector of the triode;
a node of the capacitor C6 connected with the diode D20 is connected with the grid of the SiCMOSFET through the diode D16 and the resistor R23 in sequence;
the node of the diode D20 connected to the resistor R34 is connected to ground
The resistor R24 is connected between the emitter and the base of the triode Q20;
the emitter of the transistor Q20 is connected to the drain of the SiC MOSFET through a voltage regulator D2.
Specifically, the cathode of the diode D2 is connected to the drain of the SiC MOSFET, the anode thereof is connected to the transistor Q20 and the resistor R24, the resistor R24 is connected in parallel between the emitter and the base of the transistor Q20, the base of the transistor Q20 is connected to one end of the resistor R34, and the other end of the resistor R34 is connected to the anode of the diode D20 and grounded. A diode D11 is connected in parallel between the collector and emitter of transistor Q20 and functions to prevent transistor Q20 from breaking down. The collector of the transistor Q20 is connected to the anode of the diode D18, and the cathode of the diode D18 is connected to the anode of the diode D14 and the capacitor C6, respectively. One end of the resistor R22 is connected to the cathode of the diode D14, and the other end is connected to the collector of the transistor Q20. The other end of the capacitor C6 is connected to the anode of the diode D16 and the cathode of the diode D20, respectively. Resistor R23 has one end connected to the cathode of diode D16 and the other end connected to the gate of the SiC MOSFET.
Preferably, for the purpose of realizing the overvoltage suppression function, a peak current is injected into the gate of the SiC MOSFET in the turn-off process, so that the turn-off process is slowed down, and the change rate of the drain current is reduced. Therefore, stray inductance on a circuit or induction voltage on transformer leakage inductance in the circuit can be reduced, and voltage stress borne by the SiC MOSFET in the turn-off process is further reduced.
Specifically, a reference voltage is set by a diode D2, and when the SiC MOSFET is turned off, the drain voltage of the SiC MOSFET is setVDRising and when it exceeds the reference voltage, diode D2 turns on and transistor Q20 turns on, the transient voltage causes capacitor C6 to produce a spike current that is injected into the gate of the SiC MOSFET through diode D16 and resistor R23. The diode D20, the diode D14, the resistor R22 and the diode D2 form a discharge loop of the capacitor C6. And then the SiC MOSFET is stably turned off, and VD begins to decrease and gradually approaches to the bus voltage value of the SiC MOSFET. Since the regulated voltage value of D2 is slightly lower than the bus voltage value, D2 is still conducting, but the rate of change of VD is close to 0 and the value of the current through capacitor C6 is close to 0. No current is injected into the gate of the SiC MOSFET and normal turn-off of the SiC MOSFET is not affected. When the MOSFET is turned on, VD drops to approximately 1V or so, and the diode D2 turns off, which does not contribute to the driving circuit.
The working process of the main driving circuit provided by the embodiment is as follows: when the control signal Vin is input to the main driving circuit and is at a high level, the primary side L1 of the transformer is up-negative and down-negative, and the secondary side L2 of the transformer is up-negative and down-positive, and the capacitor C2 is charged through the diode D1; the secondary side L3 of the transformer is positive and negative, the triode Q8 is conducted with the triode Q6, and the triode Q8 is conducted to provide a low-impedance discharge loop for the triode Q7; the transistor Q6 is turned on, so that the transistor Q1 is turned off, and the transistor Q2 is turned on; thereby causing the second voltage source V2 to pull the output Vg of the level shifting circuit high through transistor Q2.
When the control signal Vin is input to the main drive circuit and is at a low level, the primary side L1 of the transformer is up-negative and down-positive, the secondary side L2 of the transformer is up-negative and down-negative, the secondary side L2 of the transformer and the capacitor C2 provide base current for the triode Q7 through the resistor R4 and the capacitor C3, and the triode Q7 is conducted; the secondary side L3 of the transformer is negative at the top and positive at the bottom, the triode Q8 and the triode Q6 are cut off, and the cut-off of the triode Q8 creates conditions for the conduction of the triode Q7; the transistor Q6 is cut off, so that the transistor Q1 is conducted, and the transistor Q2 is cut off; the output Vg of the level shifter circuit is pulled low by transistor Q7 so that no current flows through transistor Q7 when transistor Q7 is on. Therefore, the collector resistance of the triode Q7 can be removed, the heating problem of the collector resistance is solved, the power consumption of the triode Q7 is reduced, and the switching speed of the triode Q7 is improved. And then the output end Vg of the level shift circuit is output to the SiC MOSFET after the driving capability of the level shift circuit is enhanced through the totem-pole circuit.
The SiC MOSFET drive circuit applied to the high-temperature environment solves the contradiction between the switching speed of a triode and the heating of a collector resistor in a level shift circuit; the rising time and the falling time of the output driving voltage are greatly reduced, and a driving signal with higher frequency can be provided for the SiC MOSFET. The structure of the undervoltage detection circuit is greatly simplified, the reliability of the circuit in a high-temperature environment is improved, and the manufacturing cost of the circuit is reduced. The overcurrent protection circuit is provided with protection time delay to prevent the false triggering of the overcurrent protection circuit.
The performance of the embodiments of the present invention will be further described with reference to simulation experiments.
1. Simulation conditions are as follows:
the invention adopts Pspice software to simulate the circuit. The square wave signal with the secondary value of 5V, the frequency of 100KHZ and the duty ratio of 50 percent is used as the input control signal of the driving circuit, Ron and Roff both take the value of 2 omega, and the capacitance with the capacitance value of 2nF is used for simulating the gate-source voltage C of the SiC MOSFET of the SiCSMOSFETGS。
2. Simulation content:
the method mainly observes and measures the rising time and the falling time of the output voltage of the main driving circuit, and the rising edge delay and the falling edge delay. And functional verification of the undervoltage protection circuit, functional verification of the overcurrent protection circuit, functional verification of the protection execution circuit and observation of the source-drain voltage V of the SiC MOSFETDSWhether the variation before and after the circuit is added with the overvoltage suppression circuit is expected.
3. And (3) simulation result analysis:
1) the rise time and the fall time of the output voltage of the main driving circuit are 14.536ns and 30.385ns respectively. The rise time and the fall time are greatly reduced compared with the same type of driving circuit.
2) The undervoltage detection circuit is matched with a theoretical analysis result, so that the undervoltage detection function is realized;
3) the voltage waveform of each point in the overcurrent detection circuit is matched with a theoretical analysis result, and an overcurrent fault signal can be correctly generated;
4) and a fault signal generated by simulation is transmitted to the protection execution circuit, and the protection execution circuit can pull down Vg after receiving the fault signal, so that two-step turn-off is realized.
5) The function of the overvoltage suppression circuit is also verified, and under the condition that the suppression circuit is not added (the bus voltage of the power circuit is 600V), the peak voltage value is 890V; after the overvoltage suppression circuit is added, the source-drain voltage V of the SiC MOSFETDSThe peak voltage value of (2) is 644.5V. The inhibition effect is obvious.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A SiC MOSFET driver circuit for application in high temperature environments, comprising: the drive circuit comprises a power supply, a main drive circuit, a drive protection circuit and a SiC MOSFET; wherein,
the power supply is connected with the main driving circuit and the driving protection circuit and is used for providing voltage signals for the main driving circuit and the driving protection circuit;
the main driving circuit is connected with the SiC MOSFET and used for amplifying and outputting the received control signal;
the drive protection circuit is connected with the main drive circuit and the SiC MOSFET and used for detecting the voltage signal of the main drive circuit and turning on or turning off the SiCMOS MOSFET according to the detection result.
2. The SiC MOSFET driver circuit of claim 1, wherein the main driver circuit comprises: the circuit comprises a transformer isolation circuit, a driving auxiliary circuit, a level shift circuit, a totem-pole circuit, an on resistor and an off resistor; wherein,
the transformer isolation circuit is connected with the level shift circuit;
the driving auxiliary circuit is connected with the transformer isolation circuit, the level shift circuit, the totem-pole circuit and the source electrode of the SiC MOSFET;
the level shift circuit is connected with the totem-pole circuit;
the totem-pole circuit is connected with the turn-on resistor and the turn-off resistor;
the turn-on resistor and the turn-off resistor are both connected with the grid electrode of the SiC MOSFET;
the drive protection circuit includes: the overvoltage protection circuit comprises an undervoltage detection circuit, an overcurrent detection circuit, a protection execution circuit and an overvoltage suppression circuit; wherein,
the power supply comprises a first voltage source V1 and the second voltage source V2;
the undervoltage detection circuit is connected with the first voltage source V1, the second voltage source V2 and the protection execution circuit;
the overcurrent detection circuit is connected with the level shift circuit, the second voltage source V2, the protection execution circuit and the drain electrode of the SiC MOSFET;
the protection execution circuit is connected with the first voltage source V1, the level shift circuit and the driving auxiliary circuit;
the overvoltage suppression circuit is connected with the grid electrode and the drain electrode of the SiC MOSFET.
3. The SiC MOSFET driver circuit of claim 2, wherein the transformer isolation circuit comprises: a capacitor C1, a capacitor C2, a capacitor C3, a transformer primary side L1, a transformer secondary side L2, a diode D1 and a resistor R4; wherein,
the capacitor C1 is connected with the upper end of the primary side L1 of the transformer;
the input end of the transformer isolation circuit is connected between the lower end of the primary side L1 of the transformer and the capacitor C1;
the capacitor C2 is connected with the upper end of the transformer secondary side L2, and the capacitor C2 and the diode D1 are connected in series at two ends of the transformer secondary side L2;
the lower end of the secondary side L2 of the transformer is connected with a grounding terminal;
the capacitor C3 is connected in parallel with the resistor R4 and then connected between the capacitor C2 and the output terminal a of the transformer isolation circuit.
4. The SiC MOSFET driver circuit of claim 3, wherein the drive assist circuit comprises: the transformer secondary side L3, the resistor R2, the resistor R5, the resistor R6, the triode Q8 and the triode Q12; wherein,
the lower end of the secondary side L3 of the transformer is connected with the lower end of the secondary side L2 of the transformer, the resistor R6, the emitter of the triode Q12, the emitter of the triode Q8 and the first output end B of the driving auxiliary circuit;
the upper end of the secondary side L3 of the transformer is connected with the resistor R6, the collector of the triode Q12, the base of the triode Q8 and the second output end C of the driving auxiliary circuit through the resistor R5;
the input end of the driving auxiliary circuit is connected with the source electrode of the SiC MOSFET and the first voltage source V1, and the input end of the driving auxiliary circuit is connected with the emitter electrode of the triode Q8 and the output end of the transformer isolation circuit through the resistor R2.
5. The SiC MOSFET driver circuit of claim 4, wherein the level shift circuit comprises: the transistor Q1, the transistor Q2, the transistor Q6, the transistor Q7, the resistor R1, the resistor R3, the resistor R7 and the resistor R8; wherein,
the base electrode of the triode Q6 is connected with the second output end C of the driving auxiliary circuit;
the input end of the level shift circuit is connected with the second voltage source V2, the collector electrode of the triode Q1 and the emitter electrode of the triode Q2, and the input end of the level shift circuit is connected with the base electrode of the triode Q1 and the collector electrode of the triode Q2 through the resistor R2;
the emitter of the triode Q1 is connected with the base of the triode Q2 through the resistor R3;
the emitter of the transistor Q1 is connected with the first output end B of the driving auxiliary circuit through the resistor R7;
the base electrode of the triode Q7 is connected with the output end A of the transformer isolation circuit, and the emitter electrode of the triode Q7 is connected with the first output end B of the driving auxiliary circuit;
the resistor R8 is connected between the first output end B of the driving auxiliary circuit and the output end A of the transformer isolation circuit;
the collector of the transistor Q7 is connected to the collector of the transistor Q2, and then to the output Vg of the level shift circuit.
6. The SiC MOSFET driver circuit of claim 5, wherein the totem-pole circuit comprises: a transistor Q3, a transistor Q4, a transistor Q5, a transistor Q9, a transistor Q10, and a transistor Q11; wherein,
an output end Vg of the level shift circuit is connected with the base electrode of the triode Q3 and the base electrode of the triode Q9;
the input end of the point shift circuit is connected with the collector electrode of the triode Q3, the collector electrode of the triode Q4 and the collector electrode of the triode Q5;
the emitter of the triode Q3 is connected with the emitter of the triode Q9, the base of the triode Q4, the base of the triode Q5, the base of the triode Q10 and the base of the triode Q11;
the first output end B of the drive auxiliary circuit is connected with the collector electrode of the triode Q9, the collector electrode of the triode Q10 and the collector electrode of the triode Q11;
after the emitter of the triode Q4 is connected with the emitter of the triode Q5, the emitter is connected to the gate of the SiC MOSFET through the on-resistor Ron;
after the emitter of the transistor Q10 is connected to the emitter of the transistor Q11, the transistor Q10 is connected to the gate of the SiC MOSFET through the off-resistance Roff.
7. The SiC MOSFET drive circuit of claim 5, wherein the brown-out detection circuit comprises: the circuit comprises a triode Q15, a triode Q21, a voltage regulator tube D3, a voltage regulator tube D10, a diode D4, a diode D12, a resistor R11, a resistor R16, a resistor R21, a resistor R25, a resistor R29 and a resistor R32; wherein,
the resistor R25 and the resistor R32 are connected in series and then connected between the base electrode and the emitter electrode of the triode Q21;
the node where the resistor R25 and the resistor R32 are connected is connected to the first voltage source V1 through a voltage regulator tube D10;
the collector of the triode Q21 is connected to the second voltage source V2 through a resistor R16;
the collector of the triode Q21 is connected to the output end of the undervoltage detection circuit through a diode D12;
the emitter of the triode Q21 is connected with the emitter of the triode Q15 and then is connected to the ground terminal;
the resistor R29 is connected in series with the resistor R21 and then is connected between the base electrode and the emitter electrode of the triode Q15;
the node where the resistor R29 and the resistor R21 are connected is connected to the first voltage source V1 through a voltage regulator tube D3;
the collector of the triode Q15 is connected to the second voltage source V2 through the resistor R11;
the collector of the transistor Q15 is connected to the output of the brown-out detection circuit through the diode D4.
8. The SiC MOSFET driver circuit of claim 1, wherein the over-current detection circuit comprises: the circuit comprises a triode Q18, a diode D5, a diode D1, a diode D19, a voltage regulator tube D17, a resistor R12, a resistor R20, a resistor R27 and a capacitor C7; wherein,
the resistor R27, the capacitor C7 and the voltage regulator tube D17 are sequentially connected in series and then connected between the collector and the base of the triode Q18;
the node of the resistor R27 connected with the capacitor C7 is connected with the output end Vg of the level shift circuit through a diode D15;
the node of the resistor R27 connected with the capacitor C7 is connected with the output end of the over-current detection circuit through a diode D19;
the node of the capacitor C7 connected with the stabilivolt D17 is connected to the ground;
the resistor R20 is connected between the base electrode and the emitter electrode of the triode Q18;
the emitter of the transistor Q18 is connected to the second power supply through a resistor R12;
the emitter of the transistor Q18 is connected to the drain of the SiC MOSFET through a diode D5.
9. The SiC MOSFET driver circuit of claim 2, wherein the protection execution circuit comprises: an initialization sub-circuit, a latch sub-circuit, a signal execution circuit and a prevention sub-circuit; wherein,
the initialization sub-circuit is connected with the first voltage source V1, the latch sub-circuit, the signal execution sub-circuit and the prevention sub-circuit;
the latch sub-circuit is connected with the undervoltage detection circuit, the first voltage source V1 and the signal execution sub-circuit;
the signal execution sub-circuit is connected with the level shift circuit and the prevention sub-circuit;
the prevention sub-circuit is connected with the level shift circuit and the driving auxiliary circuit.
10. The SiC MOSFET driver circuit of claim 1, wherein the overvoltage suppression circuit comprises: the circuit comprises a triode Q20, a voltage regulator tube D2, a voltage regulator tube D11, a diode D14, a diode D16, a diode D18, a diode D20, a resistor R22, a resistor R23, a resistor R24, a resistor R34 and a capacitor C6; wherein,
the diode D18, the capacitor C6, the diode D20 and the resistor R34 are connected in series in sequence and then connected between the collector and the base of the triode Q20;
the diode D18 and a node connected with the capacitor C6 are connected to an emitter of a triode Q20 through a diode D14 and a resistor R22 in sequence;
the voltage-stabilizing tube D11 is connected between the emitter and the collector of the triode;
the node of the capacitor C6 connected with the diode D20 is connected to the gate of the SiC MOSFET through a diode D16 and a resistor R23 in sequence;
the node where the diode D20 is connected with the resistor R34 is connected to the ground terminal;
the resistor R24 is connected between the emitter and the base of the triode Q20;
the emitter of the triode Q20 is connected to the drain of the SiC MOSFET through a voltage regulator tube D2.
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| CN103683890A (en) * | 2013-12-06 | 2014-03-26 | 深圳市华星光电技术有限公司 | Flyback quick starting drive circuit and drive method |
| CN105871230A (en) * | 2016-05-17 | 2016-08-17 | 南京航空航天大学 | Drive circuit of SiC MOSFET |
| CN105977905A (en) * | 2016-07-04 | 2016-09-28 | 西安电子科技大学 | Over-current and over-voltage and under-voltage drive protection system based on SiC MOSFET |
| US9966837B1 (en) * | 2016-07-08 | 2018-05-08 | Vpt, Inc. | Power converter with circuits for providing gate driving |
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| CN112468131A (en) * | 2020-11-30 | 2021-03-09 | 珠海格力电器股份有限公司 | Drive circuit and drive device |
| CN112468131B (en) * | 2020-11-30 | 2023-12-12 | 珠海格力电器股份有限公司 | Driving circuit and driving device |
| CN113726322A (en) * | 2021-09-27 | 2021-11-30 | 李文靖 | High-stability MOSFET (Metal-oxide-semiconductor field Effect transistor) driving circuit and system with equal impedance |
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