CN109428261A - 在二维均匀栅格vcsel阵列上创建任意图案 - Google Patents
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- 238000003475 lamination Methods 0.000 claims abstract description 46
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- 230000005693 optoelectronics Effects 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000003491 array Methods 0.000 claims abstract description 9
- 238000000926 separation method Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
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- 238000002955 isolation Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000001802 infusion Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 229940090044 injection Drugs 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Abstract
本发明题为“在二维均匀栅格VCSEL阵列上创建任意图案”。本发明公开了一种光电设备,所述光电设备包括半导体基板和在半导体基板上形成的光电池阵列。光电池阵列包括第一外延层,所述第一外延层限定下分布式布拉格反射器(DBR)叠层;第二外延层,所述第二外延层在所述下DBR叠层上形成并限定量子阱结构;第三外延层,所述第三外延层在所述量子阱结构上形成并限定上DBR叠层;以及在上DBR叠层上形成的电极,所述电极可被配置为将激发电流注入到每个光电池的量子阱结构中。第一组光电池被配置为响应于激发电流而发射激光辐射。在与第一组交织的第二组光电池中,光电池的选自外延层和电极的至少一个元件被配置为使得第二组中的光电池不发射激光辐射。
Description
相关申请的交叉引用
本申请要求于2017年8月31日提交的美国临时专利申请62/552,406的权益,其公开内容以引用方式并入本文。
技术领域
本发明整体涉及光电设备,并且具体涉及可配置为发射图案化照明的设备。
背景技术
现有和新兴的消费者应用已经对实时三维(3D)成像器件带来了日益增长的需求。同时,这些成像设备通常也称为深度传感器或深度映射器,通过使用一个或多个光学光束照射目标场景并且分析反射的光信号,使得能够远程测量目标场景上每个点的距离(通常为强度),所谓的目标场景深度。
在本领域,人们都知道基于单片半导体基板上光辐射的多个发光元件阵列生成光源的各种方法。
美国专利申请公布2014/0211215(其公开内容以引用方式并入本文)描述了一种光学设备,其中包括被配置为生成具有在其中施加的图案的光束的光束源。在一个实施方案中,光电设备包括半导体管芯,在该半导体管芯上以二维图案(不是规则晶格)形成垂直腔面发射激光器(VCSEL)二极管的单片阵列。术语“规则晶格”是指图案中相邻元件之间的间距(例如,VCSEL阵列中相邻发射极之间)固定并且与周期性晶格同义的二维图案。该图案可以是不相关的,因为对于任何大于二极管尺寸的偏移,作为横向偏移函数的激光二极管位置的自动相关性来说并不重要。随机、伪随机和准周期性图案就是此类不相关图案的示例。
发明内容
下文描述的本发明的实施方案提供了多种改进方法,用于构造可通过此类方法产生的图案化光源和光源。
因此,根据本发明的实施方案,提供了一种光电设备,其中包括半导体基板以及在半导体基板上形成的光电池阵列。光电池阵列包括第一外延层,所述第一外延层限定下分布式布拉格反射器(DBR)叠层;第二外延层,所述第二外延层在所述下DBR叠层上形成并限定量子阱结构;第三外延层,所述第三外延层在所述量子阱结构上形成并限定上DBR叠层;以及在上DBR叠层上形成的电极,所述电极可被配置为将激发电流注入到每个光电池的量子阱结构中。所述光电池阵列包括第一组光电池和与所述第一组光电池交织的第二组光电池,所述第一组光电池被配置为响应于所述激发电流而发射激光辐射,其中所述光电池的选自外延层和所述电极的至少一个元件被配置使得所述第二组中的光电池不发射激光辐射。
在所公开的实施方案中,阵列为规则阵列,而第一组光电池以不相关的图案布置在阵列内。
在一个实施方案中,第二组光电池包括上DBR叠层中的注入离子,其通过足以将注入到量子阱结构中的激发电流降低至低于发射激光辐射所需的阈值的量,来增大上DBR叠层的电阻。
在其他实施方案中,第二组光电池的电极被配置以便不将激发电流注入到量子阱结构中。在一个此类实施方案中,光电池包括外延层和电极之间的隔离层,以及隔离层的一部分在第一组光电池中被蚀刻掉并且在第二组光电池中不被蚀刻,使得激发电流不被注入到第二组光电池的量子阱结构中。在另一个实施方案中,光电设备包括隔离层和被配置为将电流馈送到光电池的导体,所述隔离层将第二组光电池的电极与导体隔离,使得电流不被馈送到第二组光电池的电极。
附加地或另选地,光电设备包括在下DBR叠层和上DBR叠层之间形成的隔离层,其中隔离层被蚀刻出所述第一组光电池中的所述量子阱结构的区域并且不被蚀刻出所述第二组光电池。
根据本发明的一个实施方案,还提供了一种用于制造光电设备的方法。该方法包括将第一外延层沉积在半导体基板上,以限定下分布式布拉格反射器(DBR)叠层。将第二外延层沉积在第一外延层上以限定量子阱结构。将第三外延层沉积在第二外延层上以限定上DBR叠层。蚀刻外延层以限定光电池阵列。在第三外延层上沉积电极,并且所述电极可被配置为将激发电流注入到每个光电池的量子阱结构中,以便使得第一组光电池响应于激发电流而发射激光辐射。第二组光电池的选自所述外延层和所述电极的至少一个元件被配置使得所述第二组中的所述光电池不发射所述激光辐射,所述第二组光电池与所述第一组交织。
结合附图,从下文中对本发明的实施方案的详细描述将更完全地理解本发明,在附图中:
附图说明
图1是根据本发明的实施方案包括半导体管芯的光电设备的示意性顶视图,其中在该半导体管芯上以二维图案形成VCSEL的单片阵列;
图2A-图2B是根据本发明的实施方案启用VCSEL和禁用VCSEL的示意性截面图;
图3A-图3B是根据本发明的另一个实施方案启用VCSEL和禁用VCSEL的示意性截面图;
图4A-图4B是根据本发明的另一个实施方案启用和禁用VCSEL的区域的示意性截面图;
图5A-图5B是根据本发明的另一个实施方案启用和禁用VCSEL的区域的示意性截面图;
图6A-图6B是根据本发明的另一个实施方案启用和禁用VCSEL的区域的示意性截面图;以及
图7A-图7B是根据本发明的另一个实施方案启用VCSEL和禁用VCSEL的示意性截面图;
具体实施方式
概述
尤其,在基于光学三角测量的3D(三维)映射应用中使用发射多个光束的光源。如上述美国专利申请公布2014/0211215中所述,优势是可以在待映射的目标上使用投射随机或伪随机图案的光源。用于此类光源的期望的发射极为VCSEL(垂直腔面发射激光器)阵列,由于该激光器功耗低,因此可提供很高的可靠性和卓越的光束质量。VCSEL阵列中发射极的随机或伪随机图案可通过相应的光刻掩膜生成。然而,发射极的非周期性分布可能导致降低对光刻胶图案CD(临界尺寸)的控制,以及由于不均匀的蚀刻负载效应而导致蚀刻均匀性差。
本文所述的本发明的实施方案通过在均匀栅格上构造VCSEL阵列并且禁用各个发射极解决上述限制。禁用发射极可与启用(操作)发射极以基本上任何期望的图案交织,例如以伪随机或其他不相关图案。本发明所公开的实施方案利用VCSEL构造工艺中的修改选择性地禁用发射极,例如通过修改VCSEL的外延层或电极。由于设计基于均匀栅格,因此可使用标准光刻方法可靠地制造。
***描述
图1是根据本发明的实施方案包括半导体管芯10的光电设备的示意性顶视图,其中在该半导体管芯上以不相关的二维图案形成启用光电池12的单片阵列,诸如VCSEL;该阵列通过与用于生成本领域众所周知的VCSEL阵列的相同类型的光刻方法在半导体基板上形成,其具有形成VCSEL的合适薄膜层结构,以及在阵列中从接触焊盘14向VCSEL 12提供电力和接地连接的导体。
这种启用VCSEL 12的不相关图案是使用与用于构造类似VCSEL单元的规则阵列(即规则晶格形式的阵列)基本相同的过程来产生。然而,与传统的规则阵列相比,只能选择性地启用VCSEL 12,同时禁用剩余的类似VCSEL单元。这些禁用电池在本文中被称为“模拟电池16”,因为它们在结构上几乎与VCSEL 12完全相同,但由于制造过程中配置的薄膜层特性而不能发射激光。在下文中,术语“禁止”和“禁用”分别与“不启用”和“未启用”同义。
基于规则电池阵列,以基本上任何所需的图案(例如,以伪随机或其他不相关的图案)创建操作发射极阵列的能力具有以下优点:
·通过最小化所谓的蚀刻负载效应实现改进的干蚀刻均匀性;
·由于均匀栅格的周期性结构,实现对光刻胶CD的更严格控制;和
·通过使用树脂诸如聚酰亚胺填充电池之间的沟槽实现管芯10的更均匀的温度分布,从而导致更好的光功率均匀性。
图2-图7是启用和禁用VCSEL的示意性截面图。每个图将在标记为“A”的图中的启用VCSEL(可用作启用VCSEL 12的基础)与在标记为“B”的图中的禁用VCSEL(作为模拟电池16的可能基础)进行比较。当启用和禁用VCSEL共享大部分相同的元件时,下文参考图2A给出了启用VCSEL的详细描述。
图2A-图2B是根据本发明的实施方案启用VCSEL 17和禁用VCSEL 18的示意性截面图。
图2A中的启用VCSEL 17在半导体基板19上形成。VCSEL的外延半导体层(下n型分布式布拉格反射镜[n-DBR]叠层20,量子阱结构22和上p-DBR叠层24)沉积在半导体基板19的某个区域上。在n-DBR叠层20和p-DBR叠层24之间,形成限定层36(通常为铝氧化物)并且对其进行图案化。在p-DBR叠层24沉积后,隔离层28沉积并图案化,并且一个或多个p电极30和n电极32沉积和图案化。蚀刻隔离沟槽34以限定VCSEL阵列并且隔离相邻VCSEL。另外,隔离注入物38诸如质子注入物可靠近p-DBR叠层24和量子阱结构22沉积,以增大相邻VCSEL之间的隔离。
图2B中的禁用VCSEL 18与启用VCSEL 17不同,因为在禁用VCSEL中隔离注入物38延伸到p-DBR叠层24中并且可能延伸到量子阱结构22中。由于离子注入引起的晶格损伤,因此注入层的电阻从未注入状态增大,从而将注入量阱结构22中的激发电流降低至低于发射激光辐射所需的阈值。因此,禁用VCSEL并且不发射激光辐射。
在构造过程中通过修改负责限定隔离注入物38的沉积的横向分布的光掩模,从而允许注入离子到达p-DBR叠层24并且可能到达量子阱结构22以实现禁用VCSEL 18。
图3A-图3B是根据本发明的另一个实施方案启用VCSEL39和禁用VCSEL40的示意性截面图。启用VCSEL 39基本上与图2A的启用VCSEL 17类似,不同的是本实施方案不一定包括用于隔离相邻VCSEL的隔离注入物38。通过阻止激发电流注入到p-DBR叠层24和量子阱结构22中来实现禁用VCSEL 40。在本发明的三个另选的实施方案中,启用VCSEL 39和禁用VCSEL 40之间的区别如图4-6所示。这些图参考图3A-图3B,并且示出了用于启用VCSEL 39的区域44(用虚线标出)以及用于禁用VCSEL 40的区域46(用虚线标出)。
图4A-图4B分别是根据本发明的实施方案的图3A-图3B的启用和禁用VCSEL 39和40的区域44和46的示意性截面图。
在启用VCSEL 39中,p电极30和p-DBR叠层24之间的电接触通过在用作p电极的金属层(M1)沉积之前蚀刻隔离层28的位置41中的通孔来产生,从而使激发电流从p电极流入p-DBR叠层并且进一步流入量子阱结构22。在禁用VCSEL 40中,不蚀刻通孔,如由邻接隔离层28在位置42中所示,从而阻止激发电流从p电极30流入到p-DBR叠层24中并且进一步流入到量子阱结构22中。
在构造过程中通过修改负责描绘隔离层28的蚀刻的光掩模实现禁用VCSEL 40,以便使得不蚀刻位置42中的通孔。
图5A-图5B分别是根据本发明的另一个实施方案的图3A-图3B的启用和禁用VCSEL39和40的区域44和46的示意性截面图。
在启用VCSEL 39和禁用VCSEL 40中,分别在位置62和64中的隔离层28中蚀刻通孔。第二隔离层60沉积在隔离层28上,并且在位置62的启用VCSEL 39中蚀刻通孔,而在位置64的禁用VCSEL 40中不蚀刻通孔。p电极30沉积在第二隔离层60上以及在位置62蚀刻的通孔启用p电极和p-DBR叠层24之间的电接触,因此使得激发电流从p电极流入p-DBR叠层,并且进一步流入量子阱结构22。然而,由于位置64的邻接第二隔离层60,在禁用VCSEL 40的p电极30和p-DBR叠层24之间未建立电接触,因此阻止激发电流从p电极流入到p-DBR叠层中并且进一步流入到量子阱结构22中。
在制造过程中通过修改负责描绘隔离层60的蚀刻的光掩模来实现禁用VCSEL 40,以便阻止蚀刻位置64的通孔。
图6A-图6B分别是根据本发明的另一个实施方案的图3A-图3B的启用和禁用VCSEL39和40的区域44和46的示意性截面图。
在启用VCSEL 39和禁用VCSEL 40两者中,p电极30和p-DBR叠层24之间的电接触通过在隔离层28的位置41蚀刻通孔而生成,类似于图4A的启用VCSEL。第二隔离层66沉积在p电极30上(而不是沉积在隔离层28上,如图5A-图5B所示)。在位置72的第二隔离层66中蚀刻通孔,但在位置74不蚀刻通孔。导电层76沉积在第二隔离层66上,以将电流馈送到光电池阵列。由于位置72中的蚀刻通孔,因此导电层76与p电极30建立电接触,既而与p-DBR叠层24建立电接触,使得激发电流从第二金属层流入p-DBR叠层并且进一步流入量子阱结构22。然而,由于位置74的邻接第二隔离层66,因此将禁用VCSEL 40的p电极30与导电层76隔离,从而阻止将电流馈送到p电极。
在制造过程中通过修改负责描绘隔离层60的蚀刻的光掩模来实现禁用VCSEL 40,以便阻止蚀刻位置74的通孔。
图7A-图7B是根据本发明的实施方案启用VCSEL 80和禁用VCSEL82的示意性截面图。启用VCSEL 80大体上与图3A的启用VCSEL 39类似。禁用VCSEL 82与启用VCSEL 80不同,因为在位置84不蚀刻该限定层36,从而阻止量子阱结构22的增长。
在制造过程中通过修改光掩模来实现禁用VCSEL 80,以便阻止蚀刻位置84的限定层36。
应当理解,上文所描述的实施方案以举例的方式引用,并且本发明不限于上文已特别示出或描述的内容。相反,本发明的范围包括上文所述的各种特征、以及本领域的技术人员在阅读以上描述之后会想到的在现有技术中没有公开的其变型形式和修改形式的组合和子组合。
Claims (14)
1.一种光电设备,包括:
半导体基板;和
光电池阵列,所述阵列在所述半导体基板上形成并且包括:
第一外延层,所述第一外延层限定下分布式布拉格反射器(DBR)叠层;
第二外延层,所述第二外延层在所述下DBR叠层上形成并限定量子阱结构;
第三外延层,所述第三外延层在所述量子阱结构上形成并限定上DBR叠层;和
电极,所述电极在所述上DBR叠层上形成,所述电极可被配置为将激发电流注入到每个光电池的量子阱结构中,
其中所述阵列包括第一组光电池和与所述第一组光电池交织的第二组光电池,所述第一组光电池被配置为响应于所述激发电流而发射激光辐射,其中所述光电池中选自所述外延层和所述电极的至少一个元件被配置为使得所述第二组中的所述光电池不发射所述激光辐射。
2.根据权利要求1所述的光电设备,其中所述阵列为规则阵列,而所述第一组光电池以不相关的图案布置在所述阵列内。
3.根据权利要求1所述的光电设备,其中所述第二组光电池包括上DBR叠层中的注入离子,所述注入离子通过足以将注入到所述量子阱结构中的所述激发电流降低至低于发射激光辐射所需的阈值的量,来增大所述上DBR叠层的电阻。
4.根据权利要求1所述的光电设备,其中所述第二组光电池的所述电极被配置为不将所述激发电流注入到所述量子阱结构中。
5.根据权利要求4所述的光电设备,其中所述光电池包括所述外延层和所述电极之间的隔离层,并且其中所述隔离层的一部分在所述第一组光电池中被蚀刻掉并且在所述第二组光电池中不被蚀刻,使得所述激发电流不被注入到所述第二组光电池的所述量子阱结构中。
6.根据权利要求4所述的光电设备,并且包括隔离层和被配置为将电流馈送到所述光电池的导体,所述隔离层将所述第二组光电池的所述电极与所述导体隔离,使得所述电流不被馈送到所述第二组光电池的所述电极。
7.根据权利要求1所述的光电设备,并且包括在所述下DBR叠层和所述上DBR叠层之间形成的隔离层,其中所述隔离层被蚀刻出所述第一组光电池中的所述量子阱结构的区域并且不被蚀刻出所述第二组光电池。
8.一种用于制造光电设备的方法,所述方法包括:
将第一外延层沉积在半导体基板上以限定下分布式布拉格反射器(DBR)叠层;
将第二外延层沉积在所述第一外延层上以限定量子阱结构;
将第三外延层沉积在所述第二外延层上以限定上DBR叠层;
蚀刻所述外延层以限定光电池阵列;
在所述第三外延层上沉积电极,所述电极可被配置为将激发电流注入到每个光电池的所述量子阱结构中以便使得第一组光电池响应于所述激发电流而发射激光辐射;以及
配置第二组光电池的选自所述外延层和所述电极的至少一个元件,使得所述第二组中的所述光电池不发射所述激光辐射,所述第二组光电池与所述第一组交织。
9.根据权利要求8所述的方法,其中所述阵列为规则阵列,而所述第一组光电池以不相关的图案布置在所述阵列内。
10.根据权利要求8所述的方法,其中配置所述至少一个元件包括将离子注入所述上DBR叠层,所述离子通过足以将注入到所述量子阱结构中的所述激发电流降低至低于发射激光辐射所需的阈值的量,来增大所述上DBR叠层的所述电阻。
11.根据权利要求8所述的方法,其中配置所述至少一个元件包括配置所述第二组的所述电极不将所述激发电流注入到所述量子阱结构中。
12.根据权利要求11所述的方法,其中配置所述电极包括在所述外延层和所述电极之间形成隔离层,以及在所述第一组光电池中蚀刻掉所述隔离层的一部分而在所述第二组光电池中不蚀刻所述隔离层,使得所述激发电流不被注入到所述第二组光电池的所述量子阱结构中。
13.根据权利要求11所述的方法,其中配置所述电极包括配置导体以将电流馈送到所述光电池阵列,以及沉积和图案化隔离层以便将所述第二组光电池的所述电极与所述导体隔离,使得所述电流不被馈送到所述第二组光电池的所述电极。
14.根据权利要求8所述的方法,其中配置所述至少一个元件包括在所述下DBR叠层和所述上DBR叠层之间沉积隔离层,以及将所述隔离层蚀刻出所述第一组光电池中的所述量子阱结构的区域而不将所述隔离层蚀刻出所述第二组光电池。
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Also Published As
Publication number | Publication date |
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TWI720744B (zh) | 2021-03-01 |
KR20210099202A (ko) | 2021-08-11 |
TW201913741A (zh) | 2019-04-01 |
JP6931419B2 (ja) | 2021-09-01 |
EP4047762A1 (en) | 2022-08-24 |
JP7210663B2 (ja) | 2023-01-23 |
EP3656028B1 (en) | 2022-05-04 |
KR102288103B1 (ko) | 2021-08-12 |
KR102351103B1 (ko) | 2022-01-14 |
US10411437B2 (en) | 2019-09-10 |
US20200266608A1 (en) | 2020-08-20 |
KR20200030100A (ko) | 2020-03-19 |
CN109428261B (zh) | 2021-01-01 |
TWM575621U (zh) | 2019-03-11 |
US20190089128A1 (en) | 2019-03-21 |
TWI683348B (zh) | 2020-01-21 |
US10153614B1 (en) | 2018-12-11 |
US20190356112A1 (en) | 2019-11-21 |
JP2021182640A (ja) | 2021-11-25 |
US10951008B2 (en) | 2021-03-16 |
TW202015105A (zh) | 2020-04-16 |
CN209088263U (zh) | 2019-07-09 |
US10700493B2 (en) | 2020-06-30 |
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WO2019045873A1 (en) | 2019-03-07 |
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