CN109420979B - Machining device and machining method - Google Patents

Machining device and machining method Download PDF

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Publication number
CN109420979B
CN109420979B CN201810862652.4A CN201810862652A CN109420979B CN 109420979 B CN109420979 B CN 109420979B CN 201810862652 A CN201810862652 A CN 201810862652A CN 109420979 B CN109420979 B CN 109420979B
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China
Prior art keywords
grinding
workpiece
height position
sealed substrate
displacement sensor
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CN201810862652.4A
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CN109420979A (en
Inventor
藤原直己
黄善夏
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Towa Corp
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Towa Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
    • B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
    • B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)

Abstract

The invention provides a machining device and a machining method for suppressing unevenness in the amount of grinding of a workpiece. A machining device for machining a workpiece (2) is provided with a table (4) on which the workpiece (2) is placed, a grinding mechanism (8) for grinding the workpiece (2), and a measuring mechanism (19) for measuring the position of at least a part of the workpiece (2) in the workpiece thickness direction of the workpiece (2), wherein the grinding mechanism (8) has a grinding wheel (10), and the position of the grinding wheel in the workpiece thickness direction is controlled on the basis of the measurement value measured by the measuring mechanism (19).

Description

Machining device and machining method
Technical Field
The present invention relates to a processing apparatus and a processing method.
Background
As a conventional technique, for example, patent document 1 discloses a method for processing a package (package) substrate. The processing method of the package substrate is a processing method of a package substrate 10, and the package substrate 10 includes: a plurality of device chips (device chips) 20 arranged in a chip region on the substrate 12 defined by a plurality of intersecting planned dividing lines (lines) 25; a plurality of columnar conductor electrodes 22 formed on the outer periphery of the element chip 20; and a resin sealing layer 24 that covers the plurality of component chips 20 and the columnar conductor electrodes 22, the processing method including: a cutting step of cutting the resin sealing layer 24 in a region where at least the plurality of columnar conductor electrodes 22 are embedded by a cutting blade (blade)32 to form a cutting groove 33 deeper than the finished thickness of the package substrate 10, and exposing an end surface 22a of the columnar conductor electrode 22 to the bottom of the cutting groove 33; and a grinding step of grinding the resin sealing layer 24 of the package substrate 10 and the plurality of component chips 20 arranged on the substrate 12 by using a grinding wheel 46 after the cutting step is performed, so as to thin the package substrate 10 to the finish thickness.
[ Prior art documents ]
[ patent document ]
[ patent document 1] Japanese patent laid-open No. 2014-220443
Disclosure of Invention
[ problems to be solved by the invention ]
In the method for processing a package substrate disclosed in patent document 1, the resin seal layer 24 is cut by the cutting blade 32 to form the cutting groove 33 deeper than the finish thickness of the package substrate 10. However, a method of controlling or measuring the depth of the cut groove 33 is not disclosed, and there is a possibility that the depth (cut amount) of the cut groove 33 is not uniform.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a machining apparatus and a machining method capable of suppressing unevenness in the amount of grinding of a workpiece (work).
[ means for solving problems ]
In order to solve the above problem, a machining apparatus of the present invention performs grinding machining on a resin-sealed workpiece, the machining apparatus including: a table on which a workpiece is placed; a grinding mechanism for grinding the sealing resin of the workpiece; and a measuring unit that measures a height position of the upper surface of the workpiece before grinding and a height position of the upper surface of the workpiece after grinding, wherein the grinding unit includes a grinding wheel, and the position of the grinding wheel in the thickness direction of the workpiece is controlled based on a comparison between the height position of the upper surface of the workpiece before grinding and the height position of the upper surface of the workpiece after grinding, which are measured by the measuring unit.
In order to solve the above-described problems, a processing method of the present invention is a method of grinding a workpiece having a substrate, a plurality of semiconductor elements mounted on the substrate, a plurality of projecting electrodes arranged around the semiconductor elements, and a sealing resin covering at least the plurality of semiconductor elements and the plurality of projecting electrodes, the method including: a setting step of setting a processing scheduled line on a substrate; a mounting step of mounting the workpiece on a stage; a grinding step of grinding the sealing resin of the workpiece by a grinding wheel; a measuring step of measuring a height position of an upper surface of the workpiece before grinding and a height position of an upper surface of the workpiece after grinding; and a control step of controlling the position of the grinding wheel in the thickness direction of the workpiece based on a comparison between the height position of the upper surface of the workpiece before grinding and the height position of the upper surface of the workpiece after grinding, which are measured in the measurement step.
[ Effect of the invention ]
According to the present invention, variations in the amount of grinding of the workpiece can be suppressed.
Drawings
Fig. 1 is a plan view showing an outline of a cutting device according to embodiment 1 of the present invention.
Fig. 2(a) and 2(b) are schematic diagrams showing the configuration of a measuring mechanism provided in the cutting apparatus shown in fig. 1, fig. 2(a) is a schematic diagram showing a state before grinding a workpiece, and fig. 2(b) is a schematic diagram showing a state in which a height position of the workpiece is measured during grinding of the workpiece.
Fig. 3(a) to 3(e) are schematic diagrams showing a process of measuring the height positions of the workpiece before and after grinding by the measuring means shown in fig. 2(a) and 2 (b).
Fig. 4(a) to 4(c) are schematic views showing a sealed substrate used in embodiment 1, fig. 4(a) is a plan view before resin sealing, fig. 4(b) is a front view before resin sealing, and fig. 4(c) is a front view after resin sealing.
Fig. 5(a) to 5(e) are schematic process sectional views showing a process of manufacturing a PoP-type semiconductor device using the sealed substrate shown in fig. 4(a) to 4 (c).
Fig. 6(a) to 6(f) are schematic process cross-sectional views showing a process in which a grinding process and a cutting process are sequentially performed along a line to be processed in embodiment 2.
Fig. 7 is a plan view showing an outline of a cutting device according to embodiment 3 of the present invention.
Fig. 8(a) to 8(f) are schematic process sectional views showing a process of manufacturing a PoP-type semiconductor device using the sealed substrate shown in fig. 4(a) to 4(c) in the cutting apparatus shown in fig. 7.
Fig. 9(a) to 9(f) are schematic process cross-sectional views showing a process of performing the rough grinding process and the finish grinding process in this order along the line to be processed in embodiment 4.
Fig. 10(a) to 10(e) are schematic process sectional views showing a process for manufacturing a PoP-type semiconductor device using the sealed substrate used in embodiment 5.
Description of the symbols
1. 44: cutting device (processing device)
2. 61: sealed base plate (workpiece)
2 a: grinding front of sealed substrate
2 b: ground portion of sealed substrate
3: substrate supply unit
4: cutting platform (platform)
5: moving mechanism
6: rotating mechanism
7. 7a, 7b, 7 c: displacement sensor
8: main shaft (grinding mechanism)
8 a: spindle holding part
9: main shaft (cutting mechanism)
10. 48, 49: grinding wheel
11: rotary knife
12. 13: processing water jet nozzle
14. 17: video camera
15: monolithic article
16: inspection platform
18: tray for good products
19: measuring mechanism
20: control unit
21: driving mechanism
22: vidicon (inspection mechanism)
23: adsorption clamp
24: processing water
25. 42, 53, 68: substrate
26. 57: semiconductor chip (semiconductor element)
27. 58: solder ball (bulge shape electrode)
28. 43, 60, 71: sealing resin
29. 56, 69: bump
30. 37, 59, 66: solder ball
31. 31a, 31b, 31c, 31d, 31e, 54: machining predetermined line
32. 55: region(s)
33. 33a, 33b, 33c, 33d, 33e, 62: opening part
34. 34a, 34b, 34c, 34d, 34e, 52, 63: cutting groove
35. 64: lower package
36. 65: upper package
38. 67: PoP type semiconductor device
39: logic semiconductor chip
40: memory semiconductor chip
41: bonding wire
45: grinding platform (platform)
46: main shaft (1 st grinding mechanism)
47: main shaft (No. 2 grinding mechanism)
50. 50a, 50b, 50c, 50 e: shallow opening part
51. 51a, 51b, 51c, 51d, 51 e: deep opening part
70: semiconductor chip
A: supply module
B: grinding/cutting module
B1: grinding module
B2: cut-off module
C: inspection module
CTL: control unit
h: height of sealed substrate
h 0: height position of cutting platform
h 1: height position of ground front part of sealed substrate
h 2: height position of ground portion of sealed substrate
v: speed of rotation
X, Y, Z, θ: direction of rotation
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings. In all the drawings in the present specification, the drawings are schematically shown with omission or exaggeration as appropriate for the convenience of understanding. The same components are denoted by the same reference numerals, and description thereof will be omitted as appropriate. In the present specification, the term "semiconductor element" includes a semiconductor chip which is not sealed with a resin or the like, and a semiconductor chip in which at least a part of the semiconductor chip is sealed with a resin or the like. In the present specification, "grinding" means grinding (grinding) the surface of a workpiece with particles of a grinding stone, and "cutting" means cutting (cutting) the workpiece into a plurality of regions.
[ embodiment mode 1]
(Structure of cutting device)
Referring to fig. 1, a description will be given of a configuration of a cutting device as an example of the processing device of the present invention. As shown in fig. 1, the cutting device 1 includes, for example, as each component: a supply module a that supplies a sealed substrate 2 as a workpiece; a grinding/cutting module B for grinding and cutting the sealed substrate 2; and an inspection module C for inspecting the singulated product (corresponding to a product or a semi-product) cut and singulated. Each component is detachably and replaceably equivalent to the other components.
The supply module a is provided with a substrate supply unit 3 that supplies the sealed substrate 2. The sealed substrate 2 includes, for example, a substrate, a plurality of semiconductor chips mounted on a plurality of regions of the substrate, and a sealing resin formed so as to cover the plurality of regions collectively. The plurality of regions obtained by cutting and singulating the sealed substrate 2 correspond to products or semi-products, respectively. The sealed substrate 2 is conveyed from the supply module a to the grinding/cutting module B by a conveyance mechanism (not shown).
The grinding/cutting module B is provided with a cutting table 4 on which the sealed substrate 2 is placed and ground and cut. A suction jig (see fig. 2a and 2 b) for sucking the sealed substrate 2 is attached to the cutting table 4. The cutting table 4 can be moved in the Y direction of the figure by a moving mechanism 5. The cutting table 4 is rotatable in the θ direction by the rotation mechanism 6. Above the cutting table 4, for example, a displacement sensor 7 for measuring the height position of the cutting table 4 is provided. As the displacement sensor 7, for example, a contact type displacement sensor, an optical type displacement sensor, an ultrasonic type displacement sensor, or the like is used.
The grinding/cutting module B is provided with two spindles (spindles) 8 and 9. For example, the following are provided: a main shaft 8 as a grinding mechanism for grinding a part of the sealed substrate 2; and a main shaft 9 as a cutting mechanism for cutting the sealed substrate 2 into a plurality of regions. A thick (wide) grinding wheel 10 is attached to the spindle 8 to grind a part of the sealed substrate 2. A thin (small-width) rotary blade 11 is attached to the spindle 9 to cut the sealed substrate 2.
The main spindle 8 is provided with a machining water jet nozzle (nozzle)12 for jetting machining water to the grinding wheel 10, and a displacement sensor 7 for measuring the height position of the sealed substrate 2. As the machining water, cooling water for cooling the grinding wheel 10, cleaning water for removing grinding chips generated by grinding, and the like are used. The displacement sensor 7 is the same as the displacement sensor provided above the cutting platform 4. As shown in fig. 1, the displacement sensors 7 are provided on both sides of the spindle 8 in a plan view, for example. The displacement sensor 7 may be provided on both sides of the main shaft 8 or only on one side thereof. The height position of at least a part of the sealed substrate 2 before grinding, the height position of at least a part of the sealed substrate 2 after grinding, and the height position of the cutting table 4 can be measured by the displacement sensor 7.
Further, a camera (see fig. 2a and 2 b) for imaging a surface state of at least a part of the sealed substrate 2 after grinding can be provided on the spindle 8. A camera includes, for example, a Charge Coupled Device (CCD), a Complementary Metal Oxide Semiconductor (CMOS) sensor, and the like as an imaging element.
The main spindle 9 is provided with a processing water jet nozzle 13 for jetting processing water to the rotary blade 11, and a camera 14 for imaging a cutting groove (notch) of the sealed substrate 2 cut by the rotary blade 11. As the machining water, cutting water for suppressing clogging of the rotary cutter 11, cooling water for cooling the rotary cutter 11, cleaning water for removing end materials and the like generated by cutting, and the like are used.
The cutting apparatus 1 is a single table-double spindle (single table-double spindle) cutting apparatus provided with one cutting table 4 and two spindles 8 and 9. The spindles 8, 9 are independently movable in the X-direction and the Z-direction, respectively. The sealed substrate 2 is ground by the grinding wheel 10 by moving the cutting table 4 and the spindle 8 relative to each other. The sealed substrate 2 is cut by the rotary blade 11 by moving the cutting table 4 and the spindle 9 relative to each other.
In the present embodiment, the following is shown: the grinding/cutting module B is provided with a spindle 8 as a grinding mechanism for grinding the sealed substrate 2 and a spindle 9 as a cutting mechanism for cutting the sealed substrate 2. The present invention is not limited to this, and two spindles that perform rough machining and finish machining, respectively, as the grinding mechanism and one spindle as the cutting mechanism may be provided. Further, two spindles as the grinding mechanism and the cutting mechanism may be provided.
The inspection module C is provided with an inspection stage 16, and the inspection stage 16 is used to mount a plurality of singulated products 15 (corresponding to products or semi-products) obtained by cutting and singulating the sealed substrate 2 for inspection. The singulated objects 15 are collectively conveyed from the cutting stage 4 to the inspection stage 16 by a conveying mechanism (not shown). The plurality of singulated objects 15 are inspected for surface conditions and the like by an inspection camera 17.
The singulated objects 15 inspected by the inspection platform 16 are divided into good and bad ones. Good products are transferred and stored in a good product tray (tray)18 by a transfer mechanism (not shown), and defective products are transferred and stored in a defective product tray (not shown).
The supply module a is provided with a control unit CTL. The controller CTL controls the operation of the cutting device 1, the conveyance of the sealed substrate 2, the grinding and cutting of the sealed substrate 2, the conveyance of the cut singulated objects 15, the inspection and storage of the singulated objects 15, and the like. In the present embodiment, the control unit CTL is provided in the supply module a. The control unit CTL is not limited to this, and may be provided in another module. The control unit CTL may be divided into a plurality of blocks and provided in at least two of the supply block a, the grinding/cutting block B, and the inspection block C.
(construction of measuring means)
The configuration of the measuring mechanism for measuring and controlling the grinding amount of the sealed substrate 2 ground by the grinding wheel 10 will be described with reference to fig. 2(a) and 2 (b). For convenience, in the sealed substrate 2, a portion before grinding is defined as a grinding front portion 2a of the sealed substrate 2, and a portion after grinding is defined as a ground portion 2b of the sealed substrate 2.
As shown in fig. 2(a) and 2(b), the spindle 8 is provided in a spindle holding portion 8a that holds the spindle. The measurement mechanism 19 includes, for example, two displacement sensors 7a and 7b provided in the spindle holding portion 8a, a displacement sensor 7c provided in the cutting deck 4, and a control unit 20. The two displacement sensors 7a and 7b provided in the spindle holding portion 8a and the displacement sensor 7c provided in the cutting table 4 may be the same type of displacement sensor or different types of displacement sensors. As the displacement sensor, for example, an optical displacement sensor is used. It is also desirable to match the reference points of the displacement sensors 7a, 7b, and 7c with the surface position of the cutting deck 4, for example, in advance, so as to eliminate the error between the displacement sensors.
The spindle 8 and the grinding wheel 10 are moved up and down in the Z direction by moving up and down the spindle holding portion 8a in the Z direction by the drive mechanism 21. The lower end position of the grinding wheel 10 in the thickness direction (portion indicated by h in the drawing) of the sealed substrate 2 is controlled by lowering the spindle 8 by the drive mechanism 21. The spindle 8 and the grinding wheel 10 can be moved in the X direction by a drive mechanism (not shown).
As shown in fig. 2(b), the lower end position of the grinding wheel 10 in the thickness direction of the sealed substrate 2 is set by lowering the grinding wheel 10 by a fixed amount in the-Z direction. The sealed substrate 2 is ground by the grinding wheel 10 by rotating the grinding wheel 10 counterclockwise at a high speed and moving the cutting table 4 in the + Y direction.
The displacement sensor 7a is a sensor mainly used for measuring the height position of the grinding front portion 2a of the sealed substrate 2 before the sealed substrate 2 is ground. The displacement sensor 7b is a sensor for measuring the height position of the ground portion 2b of the sealed substrate 2 after grinding the sealed substrate 2. The displacement sensor 7c is a sensor for measuring the height position of the cutting deck 4. The height positions measured by the displacement sensors 7a, 7b, and 7c are stored in the control unit 20, and are subjected to arithmetic processing by the control unit 20.
The grinding amount of the sealed substrate 2 can be determined by comparing the height position of the grinding front portion 2a of the sealed substrate 2 measured by the displacement sensor 7a with the height position of the ground portion 2b of the sealed substrate 2 measured by the displacement sensor 7 b. The displacement sensors 7a and 7b can also measure the height position of the cutting deck 4. Further, a camera 22 for inspecting the surface state of the ground portion 2b of the sealed substrate 2 may be provided outside the displacement sensor 7b provided in the spindle holding portion 8 a. In addition, strictly speaking, the displacement sensors 7a and 7b and the camera 22 are provided in the spindle holding portion 8a, but in the present specification, for convenience, they may be provided in the spindle 8.
On the cutting table 4, a suction jig 23 for suction-holding the sealed substrate 2 is mounted. The sealed substrate 2 is placed on the suction jig 23 and sucked to the cutting stage 4. When the sealed substrate 2 is ground, the machining water 24 is sprayed from the machining water spray nozzle 12 toward the machining point between the sealed substrate 2 and the grinding wheel 10.
(method of measuring grinding amount)
A method of measuring the amount of grinding of the sealed substrate 2 by the measuring means 19 and controlling the amount of grinding will be described with reference to fig. 3(a) to 3 (e). In fig. 3(a) to 3(e), the driving mechanism 21, the machining-water ejecting nozzle 12, the control unit 20, and the displacement sensor 7c are omitted for convenience.
First, as shown in fig. 3a, the grinding wheel 10 is rotated at a high speed in the counterclockwise direction by a spindle motor (not shown) provided in the spindle 8. Next, the main shaft 8 is lowered by a fixed amount in the-Z direction by the driving mechanism 21 (see fig. 2(a) and 2 (b)). At this stage, the lower end position of the grinding wheel 10 in the thickness direction of the sealed substrate 2 is set from the surface of the sealed substrate 2. In other words, the spindle 8 is lowered from the surface of the sealed substrate 2 so that the lower end position of the grinding wheel 10 is aligned with the position of the fixed depth d 0. The depth d0 corresponds to the grinding amount for grinding the sealed substrate 2. In this way, the target grinding amount (grinding depth) for grinding the sealed substrate 2 is controlled.
Next, the cutting deck 4 is moved in the + Y direction at a constant speed v. When the cutting deck 4 passes below the displacement sensor 7a, the height h0 of the cutting deck 4 is measured by the displacement sensor 7 a. The height position h0 of the cutting deck 4 is set as the reference height position of the displacement sensor 7 a. The height position h0 of the cutting deck 4 is stored in the control unit 20 (see fig. 2a and 2 b).
Next, as shown in fig. 3(b), the cutting deck 4 is further moved in the + Y direction. When the grinding front portion 2a of the sealed substrate 2 passes below the displacement sensor 7a, the height position h1 of the grinding front portion 2a is measured by the displacement sensor 7 a. The height position h1 of the grinding front portion 2a is stored in the control unit 20 (see fig. 2(a) and 2 (b)). The height position h1 of the grinding front portion 2a corresponds to the relative height position before grinding the sealed substrate 2. Strictly speaking, the difference (h1-h0) between the height position h1 of the ground front portion 2a of the sealed substrate 2 and the height position h0 of the cutting table 4 corresponds to the height from the surface of the cutting table 4 to the surface of the ground front portion 2a of the sealed substrate 2. While the grinding front portion 2a of the sealed substrate 2 passes below the displacement sensor 7a, the height position h1 of the grinding front portion 2a is continuously measured.
Next, as shown in fig. 3(c), the cutting deck 4 is further moved in the + Y direction. By the grinding front portion 2a of the sealed substrate 2 being in contact with the grinding wheel 10, the grinding front portion 2a is ground by the grinding wheel 10 by a fixed amount from the surface to a fixed depth d 0. The grinding front portion 2a of the sealed substrate 2 passes through the grinding wheel 10, thereby forming a ground portion 2b of the sealed substrate 2.
When the cutting table 4 is further moved in the + Y direction, the cutting table 4 passes below the displacement sensor 7 b. When the cutting deck 4 passes below the displacement sensor 7b, the height h0 of the cutting deck 4 is measured by the displacement sensor 7 b. The height position h0 of the cutting deck 4 is set as the reference height position of the displacement sensor 7 b. The height position h0 of the cutting deck 4 is stored in the control unit 20 (see fig. 2a and 2 b). When the reference points of the displacement sensors 7a and 7b are matched in advance, the height position h0 of the cutting deck 4 measured by the displacement sensor 7b and the height position h0 of the cutting deck 4 measured by the displacement sensor 7a have substantially the same value.
Next, as shown in fig. 3(d), the cutting deck 4 is further moved in the + Y direction. When the ground portion 2b of the sealed substrate 2 passes below the displacement sensor 7b, the height position h2 of the ground portion 2b is measured by the displacement sensor 7 b. The height position h2 of the ground portion 2b is stored in the control unit 20 (see fig. 2(a) and 2 (b)). The difference (h2-h0) between the height position h2 of the ground portion 2b of the sealed substrate 2 and the height position h0 of the cutting table 4 corresponds to the height from the surface of the cutting table 4 to the surface of the ground portion 2b of the sealed substrate 2. While the ground portion 2b of the sealed substrate 2 passes below the displacement sensor 7b, the height position h2 of the ground portion 2b is continuously measured.
When the height h0 of the cutting table 4 measured by the displacement sensor 7a and the displacement sensor 7b is the same value, the grinding amount d of the sealed substrate 2 can be easily determined by comparing the height h1 of the grinding front portion 2a of the sealed substrate 2 with the height h2 of the ground portion 2b of the sealed substrate 2 measured by the displacement sensor 7 b.
The difference between the height (h1-h0) from the surface of the cutting table 4 to the surface of the ground front portion 2a of the sealed substrate 2 measured by the displacement sensor 7a and the height (h2-h0) from the surface of the cutting table 4 to the surface of the ground portion 2b of the sealed substrate 2 measured by the displacement sensor 7b corresponds to the grinding amount d of the sealed substrate 2. Therefore, the grinding amount d of the sealed substrate 2 is (h1-h0) - (h2-h0) ═ h1-h 2. Therefore, if the height position h0 of the cutting table 4 measured by the displacement sensors 7a and 7b is the same value, the grinding amount d of the sealed substrate 2 can be determined from the difference (h1-h2) between the height position h1 of the grinding front portion 2a of the sealed substrate 2 and the height position h2 of the ground portion 2b of the sealed substrate 2.
Even when the height position h0 of the cutting table 4 measured by the displacement sensor 7a and the displacement sensor 7b are different from each other, the grinding amount of the sealed substrate 2 can be determined by determining the height from the surface of the cutting table 4 to the surface of the ground front portion 2a of the sealed substrate 2 measured by the displacement sensor 7a and the height from the surface of the cutting table 4 to the surface of the ground portion 2b of the sealed substrate 2 measured by the displacement sensor 7b, respectively, and comparing them. The control unit 20 performs arithmetic processing to determine the grinding amount of the sealed substrate 2.
By determining the height position h1 of the ground front portion 2a of the sealed substrate 2, the height position h2 of the ground portion 2b of the sealed substrate 2, and the height position h0 of the cutting table 4, respectively, the grinding amount of the sealed substrate 2 can be determined.
In the present embodiment, the height position h1 of the grinding front portion 2a of the sealed substrate 2 is continuously measured from the time point when the sealed substrate 2 passes below the displacement sensor 7 a. Similarly, the height position h2 of the ground portion 2b of the sealed substrate 2 is continuously measured from the time point when the sealed substrate 2 passes below the displacement sensor 7 b. Therefore, by comparing the height position h1 of the ground front portion 2a of the sealed substrate 2 with the height position h2 of the ground portion 2b of the sealed substrate 2, the grinding amount d of the sealed substrate 2 can be continuously measured (h1-h 2).
Since the cutting table 4 is moved at a constant speed v, the displacement sensors 7a and 7b continuously measure the height position h1 of the ground front portion 2a of the sealed substrate 2 and the height position h2 of the ground portion 2b of the sealed substrate 2 at positions that are at the same distance from the end of the sealed substrate 2. Therefore, by performing calculation processing on the height position h1 of the grinding front portion 2a of the sealed substrate 2 and the height position h2 of the ground portion 2b, which are continuously measured by the control unit 20, the grinding amount d of the sealed substrate 2 at this time point (in situ) can be accurately measured. Therefore, the grinding amount d of the sealed substrate 2 can be always accurately grasped.
Next, as shown in fig. 3(e), the cutting deck 4 is further moved in the + Y direction. When the ground portion 2b of the sealed substrate 2 passes below the camera 22, the ground portion 2b is imaged by the camera 22. This makes it possible to check whether or not there is an abnormality in the grinding state of the ground portion 2b of the sealed substrate 2.
By providing the two displacement sensors 7a and 7b and the camera 22 as the measurement means 19 on the main shaft 8 of the cutting apparatus 1, the grinding amount d of the sealed substrate 2 can be continuously measured, and the grinding amount d of the sealed substrate 2 can be always accurately grasped. Further, the grinding state of the ground portion 2b of the sealed substrate 2 can be confirmed by the camera 22 at all times. Therefore, in the case where there is an abnormality in grinding of the sealed substrate 2, it can be found early.
The series of operations described so far is an operation of grinding the sealed substrate 2 by a fixed amount by one grinding. When the sealed substrate 2 cannot be ground to the target grinding amount (grinding depth) by the primary grinding, the sealed substrate 2 is ground to the target grinding amount by repeating the above operation. In the present embodiment, the grinding amount d of the sealed substrate 2 can be continuously measured by the displacement sensors 7a and 7b provided in the measurement mechanism 19. The grinding amount can be controlled by adjusting the position of the lower end of the grinding wheel 10 by feeding back (feedback) the measured grinding amount.
In the present embodiment, two displacement sensors 7a and 7b as the measurement means 19 are provided on the main shaft 8. The present invention is not limited to this, and one displacement sensor may be provided in the spindle. At this time, the height position h0 of the cutting table 4, the height position h1 of the ground front portion 2a of the sealed substrate 2, and the height position h2 of the ground portion 2b of the sealed substrate 2 are measured by one displacement sensor. By performing arithmetic processing on these measurement values by the control unit 20, the grinding amount of the sealed substrate 2 can be obtained.
In the present embodiment, a displacement sensor 7c is also provided above the cutting deck 4 in order to measure the height position of the cutting deck 4. Thereby, for example, the influence of the cooling of the cutting table 4 by the machining water, the heat generation of the cutting table 4 by the machining heat, and the like can be detected. Therefore, even if the cutting deck 4 expands or contracts or deforms, the height position of the cutting deck 4 can be always grasped. This makes it possible to correct the variation in the height position of the cutting table 4 to the height position of the sealed substrate 2, thereby determining the grinding amount of the sealed substrate 2. In addition, if the variation in the height position of the cutting deck 4 is within a negligible range, the displacement sensor 7c may be omitted.
In the present embodiment, the height position h0 of the cutting table 4, the height position h1 of the grinding front portion 2a of the sealed substrate 2, and the height position h2 of the ground portion 2b of the sealed substrate 2 are stored in the control unit 20 provided in the measuring mechanism 19, respectively, and the grinding amount d of the sealed substrate 2 is determined based on these measurement values. The measured values are not limited to these values, and may be stored in a control unit CTL (see fig. 1) provided in the cutting apparatus 1 to determine the grinding amount of the sealed substrate 2.
(Structure of sealed substrate)
The structure of the sealed substrate used in the present embodiment will be described with reference to fig. 4(a) to 4 (c). As shown in fig. 4(c), the sealed substrate 2 includes: a substrate 25; a plurality of semiconductor chips 26 mounted on the main surface side of the substrate 25; a plurality of solder balls 27 as bump electrodes arranged around the semiconductor chip 26; and a sealing resin 28 formed to cover the plurality of semiconductor chips 26 and the plurality of solder balls 27. The semiconductor chip 26 is connected to the substrate 25 via, for example, bumps 29. A plurality of solder balls 30 serving as external electrodes are provided on the rear surface side of the sealed substrate 2. The sealed substrate 2 is a sealed substrate having a height h in the thickness direction. The sealed substrate 2 shown in the present embodiment is, for example, a sealed substrate for forming a lower Package constituting a Package on Package (PoP) type semiconductor device.
As shown in fig. 4(a), each semiconductor chip 26 and a plurality of solder balls 27 arranged around the semiconductor chip 26 are provided in a region 32 surrounded by a plurality of processing lines 31 virtually set and intersecting with each other on the substrate 25. The plurality of lines 31 are set as virtual lines on the substrate 25 by checking alignment marks (not shown) provided on the substrate 25 with an alignment camera (not shown) provided in the cutting apparatus 1. The plurality of regions 32 surrounded by the plurality of lines 31 correspond to a lower package constituting the PoP-type semiconductor device. The bump-like electrodes disposed around the semiconductor chip 26 are not limited to solder balls. For example, the electrode may be a conductive protruding electrode containing copper (Cu) or the like.
(method of manufacturing electronic Components)
A method for manufacturing an electronic component (PoP-type semiconductor device) according to this embodiment will be described with reference to fig. 5 a to 5 e.
First, as shown in fig. 5(a), a plurality of semiconductor chips 26 are mounted on a plurality of regions 32 of the substrate 25 via bumps 29, respectively. Next, a plurality of solder balls 27 serving as connection projection-shaped electrodes are arranged around each semiconductor chip 26. Next, a plurality of solder balls 30 serving as external electrodes are disposed on the back surface side of the substrate 25.
Next, as shown in fig. 5(b), the sealing resin 28 is formed so as to cover the plurality of semiconductor chips 26 and the plurality of solder balls 27. The sealed substrate 2 is produced through the steps described above. In the present embodiment, a plurality of solder balls 30 serving as external electrodes are arranged before the sealing resin 28 is formed. The present invention is not limited to this, and a plurality of solder balls 30 may be disposed after the sealing resin 28 is formed.
Next, as shown in fig. 5 c, the sealed substrate 2 is placed on the cutting table 4 (see fig. 1 to 3 e) of the cutting apparatus 1. In fig. 3(c) to 3(d), the cutting deck 4 is omitted. A grinding wheel 10 attached to a spindle 8 (see fig. 1 to 3(e)) as a grinding mechanism of the cutting apparatus 1 is disposed on a line 31 to be processed set for the sealed substrate 2. The sealing resin 28 in the sealed substrate 2 is ground by a fixed amount along the line 31 to be processed set for the sealed substrate 2. At this time, the sealing resin 28 is ground until the upper portions of the plurality of solder balls 27 disposed on the substrate 25 are exposed. The grinding wheel 10 has at least a width capable of grinding the sealing resin 28 disposed on the plurality of solder balls 27 on both sides of the line 31.
The amount of grinding of the sealing resin 28 is measured by a measuring means 19 (see fig. 2a to 3 e) provided on the spindle 8, and the sealing resin 28 is ground by the grinding wheel 10 until the upper portions of the solder balls 27 are exposed. As a result, the opening 33 exposing the upper portion of the solder ball 27 is formed in the sealed substrate 2. Further, whether or not the upper portion of the solder ball 27 is exposed is confirmed by the camera 22 (see fig. 2a to 3 e) provided on the spindle 8.
In this way, the sealed substrate 2 is ground along all the lines 31 (see fig. 4 a) set for the sealed substrate 2. As a result, a plurality of openings 33 are formed along the plurality of lines to be processed 31 set for the sealed substrate 2. The grinding process is completed by the processes up to this point.
Next, as shown in fig. 5 d, after the grinding step is completed, the rotary cutter 11 attached to the spindle 9 (see fig. 1) as the cutting mechanism of the cutting apparatus 1 is disposed on the line 31 to be processed set in the opening 33 of the sealed substrate 2. The remaining portion of the sealing resin 28 and the substrate 25 are cut by the rotary blade 11 along the line 31 to be processed set for the sealed substrate 2. As a result, the cut groove 34 is formed in the sealed substrate 2.
The sealed substrate 2 is cut along all the lines 31 (see fig. 4 a) set for the sealed substrate 2. Thus, the sealed substrate 2 is singulated into the respective regions 32 by the plurality of cutting grooves 34. Through the steps up to this point, a plurality of lower packages 35 constituting the PoP-type semiconductor device are manufactured. The steps in fig. 5(c) to 5(d) are executed by the cutting apparatus 1.
Next, as shown in fig. 5(e), the connection solder balls 27 disposed in the lower package 35 and the connection solder balls 37 disposed in the upper package 36 are connected to each other, whereby a PoP-type semiconductor device 38 as one embodiment of an electronic component is completed. The upper package 36 is formed by stacking a logic (logic) semiconductor chip 39 and a memory semiconductor chip 40, for example, and connecting the semiconductor chips to a substrate 42 via bonding wires 41. The logic semiconductor chip 39 and the memory semiconductor chip 40 are covered with a sealing resin 43.
In the present embodiment, a plurality of semiconductor chips 26 are mounted on the substrate 25 via bumps 29, respectively. The semiconductor element sealed with resin may be mounted on the substrate. Further, a multi-module structure in which a plurality of semiconductor chips or a plurality of semiconductor elements are mounted may be employed. In the present specification, a semiconductor chip is also included in one embodiment of a semiconductor device.
In the present embodiment, the sealing resin 28 on the solder ball 27 is ground by the grinding wheel 10. Further, the sealing resin 28 on the semiconductor chip 26 may be ground using the grinding wheel 10. Further, if a semiconductor element sealed with resin is mounted, a part of the mounted semiconductor element can be ground by the grinding wheel 10 in addition to the sealing resin 28.
(Effect)
A cutting device 1, which is one embodiment of a processing device according to the present embodiment, is configured to process a sealed substrate 2, which is a workpiece, and includes: a cutting table 4 on which the sealed substrate 2 is placed; a main shaft 8 as a grinding mechanism for grinding the sealed substrate 2; and a measuring mechanism 19 for measuring a position of at least a part of the sealed substrate 2 in the thickness direction of the sealed substrate 2, wherein the main shaft 8 has a grinding wheel 10, and the position of the grinding wheel 10 in the thickness direction of the sealed substrate 2 is controlled based on the measurement value measured by the measuring mechanism 19.
The processing method of the present embodiment processes a sealed substrate 2 as a workpiece, the sealed substrate 2 including a substrate 25, a plurality of semiconductor chips 26 as semiconductor elements mounted on the substrate 25, a plurality of solder balls 27 as bump electrodes arranged around the semiconductor chips 26, and a sealing resin 28 covering at least the plurality of semiconductor chips 26 and the plurality of solder balls 27, the processing method including: a setting step of setting a line 31 to be processed on the substrate 25; a measurement step of measuring, by the measurement means 19, a position of at least a part of the sealed substrate 2 in the thickness direction of the sealed substrate 2; a grinding step of grinding the sealed substrate 2 by grinding the grinding wheel 10; and a control step of controlling the position of the grinding wheel 10 in the thickness direction of the sealed substrate 2 based on the measurement value measured by the measurement means 19.
According to this configuration, the cutting apparatus 1 includes the spindle 8 that grinds the sealed substrate 2. The spindle 8 includes a grinding wheel 10 for grinding the sealed substrate 2 and a measuring mechanism 19 for measuring the grinding amount of the sealed substrate 2. The height position of the sealed substrate 2 is measured by the measuring means 19 to determine the grinding amount of the sealed substrate 2. By determining the grinding amount, the position of the grinding wheel 10 in the thickness direction of the sealed substrate 2 is controlled. Therefore, unevenness in the amount of grinding of the sealed substrate 2 can be suppressed.
More specifically, according to the present embodiment, the cutting apparatus 1 includes a main shaft 8 as a grinding mechanism that grinds a part of the sealed substrate 2. The spindle 8 includes a wide grinding wheel 10 for grinding the sealed substrate 2, and a measuring mechanism 19 for measuring the grinding amount of the sealed substrate 2 ground by the grinding wheel 10. The measurement mechanism 19 includes two displacement sensors 7a and 7b provided in the main shaft 8 and a control unit 20. The height position h1 of the ground front portion 2a of the sealed substrate 2 and the height position h2 of the ground portion 2b of the sealed substrate 2 are measured by the two displacement sensors 7a and 7 b. By comparing these height positions h1 and h2, the grinding amount d of the sealed substrate 2 is determined. The displacement sensors 7a and 7b can determine the accurate grinding amount d of the sealed substrate 2. This enables the depth of the grinding wheel 10 in the thickness direction of the sealed substrate 2 to be controlled. Therefore, unevenness in the amount of grinding of the sealed substrate 2 can be suppressed.
According to the present embodiment, the height position h1 of the ground front portion 2a of the sealed substrate 2 and the height position h2 of the ground portion 2b of the sealed substrate 2 are continuously measured by the two displacement sensors 7a and 7b provided in the spindle 8. Therefore, the grinding amount d of the sealed substrate 2 at this time point (in situ) can be continuously measured. Therefore, the grinding amount d of the sealed substrate 2 can be accurately obtained. The grinding amount d of the sealed substrate 2 can be always grasped. This makes it possible to accurately feed back the grinding amount obtained by the measuring means 19 to the depth position of the grinding wheel 10 in the thickness direction of the sealed substrate 2.
According to the present embodiment, since the grinding amount d of the sealed substrate 2 can be continuously measured, the grinding amount d of the sealed substrate 2 can be always grasped. Thus, for example, even when the grinding wheel 10 is worn and the grinding amount is reduced, the measurement means 19 can detect the change. Therefore, even when the grinding wheel 10 is worn, the position of the grinding wheel 10 can be adjusted to control the grinding amount by feeding back the grinding amount.
According to the present embodiment, the cutting apparatus 1 is provided with the spindle 8 as a grinding mechanism and the spindle 9 as a cutting mechanism. Therefore, the two steps of grinding and cutting the sealed substrate 2 can be performed in the same apparatus. Since it is not necessary to prepare two types of devices, i.e., a grinding device and a cutting device, as in the conventional case, it is possible to reduce the equipment cost. In addition, the manufacturing cost of the electronic component can be suppressed. And the productivity of the cutting apparatus 1 can be improved.
According to the present embodiment, the camera 22 for imaging the state of the ground portion 2b of the sealed substrate 2 is provided. Therefore, the surface state of the ground portion 2b of the sealed substrate 2 can be inspected. Thus, in the manufacture of the PoP-type semiconductor device 38, whether or not the upper portions of the solder balls 27 disposed in the lower package 35 are normally exposed can be clearly confirmed. Therefore, the occurrence of defects due to the shortage of the grinding amount of the sealed substrate 2 can be suppressed.
[ embodiment 2 ]
(method of processing sealed substrate)
With reference to fig. 6(a) to 6(f), in embodiment 2, a description will be given of a processing method in which a grinding step and a cutting step of the sealed substrate 2 are efficiently performed. The differences from embodiment 1 are: the cutting process is performed immediately after the grinding process is performed on one processing scheduled line. The other steps are the same as those in embodiment 1, and therefore, the description thereof is omitted.
First, as shown in fig. 6 a, the grinding wheel 10 attached to the spindle 8 (see fig. 1) is arranged on the line 31a to be processed set at the outermost side of the sealed substrate 2. Next, the grinding wheel 10 is lowered to grind the sealed substrate 2 along the line 31 a. The grinding wheel 10 forms an opening 33a in the line 31 a. In this step, the rotary blade 11 attached to the spindle 9 (see fig. 1) stands by outside the sealed substrate 2.
Next, as shown in fig. 6(b), the spindles 8 and 9 are moved, the grinding wheel 10 is disposed on the line 31b, and the rotary cutter 11 is disposed on the line 31 a. Next, the grinding wheel 10 is lowered to grind the sealed substrate 2 along the line 31b to form the opening 33 b. At the same time, the rotary knife 11 is lowered to cut the sealed substrate 2 along the line 31 a. The cutting groove 34a is formed along the planned processing line 31 a.
Next, as shown in fig. 6(c), the spindles 8 and 9 are moved, the grinding wheel 10 is disposed on the line 31c, and the rotary cutter 11 is disposed on the line 31 b. Next, the grinding wheel 10 is lowered to grind the sealed substrate 2 along the line 31c to form the opening 33 c. At the same time, the rotary knife 11 is lowered to cut the sealed substrate 2 along the line 31b to be processed. The cutting groove 34b is formed along the planned processing line 31 b.
As shown in fig. 6(d) to 6(f), by sequentially repeating this step, the openings 33a to 33e and the cutting grooves 34a to 34e are formed along all the lines 31a to 31 e. The same process is performed also on the lines to be processed orthogonal to the lines to be processed 31a to 31e, whereby the sealed substrate 2 is singulated into the respective regions.
According to the present embodiment, the grinding process and the cutting process are continuously performed using the two main shafts 8 and 9. The grinding process of grinding the grinding wheel 10 in one line to be processed is followed by the cutting process of the rotary cutter 11. Thus, the grinding step and the cutting step can be efficiently performed using the cutting device 1 having the double spindle structure. Therefore, the productivity of the cutting apparatus 1 can be improved.
[ embodiment 3 ]
(Structure of cutting device)
With reference to fig. 7, a structure of a cutting device as another example of the processing device according to embodiment 3 will be described. The cutting apparatus 1 differs from the cutting apparatus 1 shown in embodiment 1 in that the grinding/cutting module B is further divided into a grinding module and a cutting module. The other structures are the same as those of embodiment 1, and therefore, the description thereof is omitted.
As shown in fig. 7, the cutting device 44 includes, as each component: a supply module A for supplying the sealed substrate 2; a grinding module B1 for grinding the sealed substrate 2; a cutting module B2 for cutting the sealed substrate 2; and an inspection module C for inspecting the singulated product obtained by cutting and singulation. Each component is detachable and replaceable with respect to the other components. The supply module a and the inspection module C are the same as those in embodiment 1.
The grinding module B1 is provided with a grinding table 45 on which the sealed substrate 2 is placed and ground. The grinding table 45 is the same as the cutting table 4 shown in embodiment 1, and the moving mechanism 5, the rotating mechanism 6, and the displacement sensor 7 are also the same as those in embodiment 1.
In the grinding module B1, two spindles 46 and 47 are provided as grinding means. For example, the following are provided: a spindle 46 for roughly processing the sealed substrate 2; and a spindle 47 for finishing the sealed substrate 2. By separately using the grinding wheels attached to the spindles 46 and 47, the sealed substrate 2 can be roughly or finely machined. By optimizing the type or the grain size (the number of abrasive grains) of the abrasive grains constituting the grinding wheel, the sealed substrate 2 can be roughly or finely machined.
For example, the sealed substrate 2 can be roughly or finely processed by optimizing the grain size (the number of abrasive grains). By attaching a grinding wheel 48 having a small particle size (a small number of abrasive grains) to the spindle 46, the sealed substrate 2 can be roughly processed. The sealed substrate 2 can be finished by attaching a grinding wheel 49 having a large particle size (a large number of abrasive grains) to the spindle 47.
As another method, by selecting the kind of abrasive grains, rough machining or finish machining can be performed on the sealed substrate 2. For example, the sealed substrate 2 can be roughly machined by using diamond (diamond), cBN (cubic boron nitride), or the like as the superabrasive grains having the highest hardness (hardness). As general abrasive grains having hardness lower (softer) than the superabrasive grains, GC grindstones (Green Silicon Carbide grindstones) or the like are used, and the sealed substrate 2 can be finished.
The spindles 46 and 47 are provided with a machining water jet nozzle 12 for jetting machining water to the grinding stones 48 and 49, respectively, and a displacement sensor 7 for measuring the height position of the sealed substrate 2. The displacement sensor 7 is the same as the displacement sensor described in embodiment 1. In this case, the displacement sensors 7 are also provided on both sides of the main shafts 46 and 47, respectively. The displacement sensor 7 can measure the height position h1 of the ground front portion 2a of the sealed substrate 2 and the height position h2 of the ground portion 2b of the sealed substrate 2 (see fig. 2(a) to 3 (e)). Further, a camera for imaging the surface state of the ground portion 2b of the sealed substrate 2 may be provided (see fig. 2a to 3 e).
The cutting module B2 includes a cutting table 4 and a spindle 9 as a cutting mechanism. The main shaft 9 is the same as that described in embodiment 1. A rotary knife 11 for cutting the sealed substrate 2 is attached to the spindle 9. As in embodiment 1, the main spindle 9 is provided with a machining water injection nozzle 13 for injecting machining water and a camera 14 for imaging the cut groove. Further, the cutting module B2 may have a double deck-double spindle structure.
In the case where the sealed substrate is subjected to the grinding process in the processing apparatus 44 and the cutting process is performed in another process (apparatus), the cutting module B2 can be omitted. In this case, the machining device 44 functions as a grinding device.
(method of manufacturing electronic Components)
A method for manufacturing an electronic component (PoP-type semiconductor device) in embodiment 3 will be described with reference to fig. 8a to 8 f. As shown in fig. 8(a) to 8(b), the steps up to the production of the sealed substrate 2 are the same as those in embodiment 1.
Next, as shown in fig. 8 c, the sealed substrate 2 is placed on the grinding table 45 (see fig. 7) of the cutting device 44. The sealed substrate 2 is ground by a grinding wheel 48 attached to a roughing spindle 46 (see fig. 7) of the cutting device 44. The sealing resin 28 in the sealed substrate 2 is ground by a fixed amount along the line 31 to be processed set for the sealed substrate 2. In this case, for example, the grinding amount is controlled so that the upper portions of the solder balls 27 disposed on the substrate 25 are just exposed. The grinding amount is controlled by a measuring mechanism (not shown) provided in the spindle 46. As a result, the shallow opening 50 is formed in the sealed substrate 2. Since the grinding wheel 48 for rough machining, for example, having a small particle size (a small number of abrasive grains) is attached to the main shaft 46, the sealing resin 28 can be ground quickly. The plurality of shallow openings 50 are formed by grinding along all the lines 31 to be processed (see fig. 4 a) set for the sealed substrate 2.
Next, as shown in fig. 8 d, the sealed substrate 2 is ground by a grinding wheel 49 attached to the finishing spindle 47 (see fig. 7) of the cutting device 44. The sealing resin 28 in the sealed substrate 2 is ground by a fixed amount along the line 31 to be processed set for the sealed substrate 2. In this case, the grinding amount is controlled so that the upper portions of the solder balls 27 disposed on the substrate 25 are exposed. The grinding amount is controlled by a measuring mechanism (not shown) provided in the spindle 47. As a result, a deep opening 51 exposing the upper portion of the solder ball 27 is formed in the sealed substrate 2. Since the grinding wheel 49 for finishing, for example, having a large grain size (a large number of abrasive grains) is attached to the main shaft 47, the sealing resin 28 can be ground with high accuracy. The plurality of deep openings 51 are formed by grinding along all the lines 31 to be processed (see fig. 4 a) set for the sealed substrate 2. The grinding process is completed by the processes up to this point.
Similarly to embodiment 1, the grinding amount for rough machining and finish machining of the sealing resin 28 is measured by a measuring means (not shown) provided in the spindle 46 and the spindle 47, and the target grinding amount is controlled. Further, whether or not the upper portion of the solder ball 27 is exposed can be confirmed by a camera (not shown) provided on the spindle 47.
Next, as shown in fig. 8 e, after the grinding step is completed, the sealed substrate 2 is transferred from the grinding table 45 to the cutting table 4 (see fig. 7). The rotary blade 11 attached to the cutting spindle 9 (see fig. 7) of the cutting device 44 is disposed on the line 31 to be processed set in the opening 51 of the sealed substrate 2. The remaining portion of the sealing resin 28 and the substrate 25 are cut by the rotary blade 11 along the line 31 to be processed set for the sealed substrate 2. As a result, the cut groove 52 is formed in the sealed substrate 2.
The sealed substrate 2 is cut along all the lines 31 (see fig. 4 a) set for the sealed substrate 2. Thus, the sealed substrate 2 is singulated into the respective regions 32 by the cutting grooves 52. Through the steps up to this point, a plurality of lower packages 35 constituting the PoP-type semiconductor device are manufactured. The manufacturing method of the lower package 35 is different from that of the lower package manufactured by the manufacturing method of embodiment 1. The steps in fig. 8(c) to 8(e) are executed by the cutting device 44.
Next, as shown in fig. 8(f), the connection solder balls 27 disposed in the lower package 35 and the connection solder balls 37 disposed in the upper package 36 are connected to each other, whereby a PoP-type semiconductor device 38 as one embodiment of an electronic component is completed. The upper package 36 is the same as the upper package shown in embodiment 1.
According to the present embodiment, the grinding module B1 is provided with two spindles 46 and 47 as grinding means. A grinding wheel 48 having a small grain size is attached to the spindle 46 for rough machining. A grinding wheel 49 having a large grain size is attached to the spindle 47 for finishing. The grinding wheel 48 can grind the sealing resin 28 quickly, and the grinding wheel 49 can finish the sealing resin 28 with high accuracy. Therefore, the sealed substrate 2 can be ground quickly and precisely, and the grinding quality can be improved.
[ embodiment 4 ]
(method of processing sealed substrate)
With reference to fig. 9(a) to 9(f), in embodiment 4, a description will be given of a processing method in which a grinding step for rough processing and a grinding step for finish processing of the sealed substrate 2 are efficiently performed. The difference from embodiment 3 is that a grinding step of rough machining is performed on one machining scheduled line, and a grinding step of finish machining is performed immediately thereafter. The other steps are the same as those in embodiment 3, and therefore, the description thereof is omitted.
First, as shown in fig. 9 a, the grinding wheel 48 attached to the spindle 46 (see fig. 7) is disposed on the line 31a to be processed set at the outermost side of the sealed substrate 2. Next, the grinding wheel 48 is lowered to grind the sealed substrate 2 along the line 31 a. The grinding wheel 48 forms a shallow opening 50a (an opening just before the upper portion of the solder ball 27 is exposed; see fig. 8 c) in the line to be processed 31 a. In this step, the grinding wheel 49 attached to the spindle 47 (see fig. 7) stands by outside the sealed substrate 2.
Next, as shown in fig. 9(b), the spindles 46 and 47 are moved, the grinding wheel 48 is disposed on the line 31b, and the grinding wheel 49 is disposed on the line 31 a. Next, the grinding wheel 48 is lowered to grind the sealed substrate 2 along the line 31b to form a shallow opening 50 b. At the same time, the grinding wheel 49 is lowered to grind the sealed substrate 2 along the line 31 a. A deep opening 51a (an opening through which the upper portion of the solder ball 27 is exposed; see fig. 8(d)) is formed along the planned processing line 31 a.
Next, as shown in fig. 9(c), the spindles 46 and 47 are moved, the grinding wheel 48 is disposed on the line 31c, and the grinding wheel 49 is disposed on the line 31 b. Next, the grinding wheel 48 is lowered to grind the sealed substrate 2 along the line 31c to form a shallow opening 50 c. At the same time, the grinding wheel 49 is lowered to grind the sealed substrate 2 along the line 31 b. A deep opening 51b is formed along the line 31 b.
As shown in fig. 9(d) to 9(f), by sequentially repeating this step, shallow openings 50a to 50e by rough machining are formed along all the lines 31a to 31e to be machined, and then deep openings 51a to 51e by finish machining are formed. The same process is also performed on lines to be processed orthogonal to the lines to be processed 31a to 31e, thereby forming a plurality of deep openings.
According to the present embodiment, the rough grinding process and the finish grinding process are continuously performed using the two spindles 46 and 47. Rough machining of the grinding wheel 48 is performed in one machining-planned line, followed by finish machining of the grinding wheel 49. Thus, a grinding mechanism having a double spindle structure can be used to efficiently perform a high-precision grinding process. Therefore, the grinding productivity in the cutting device 44 can be improved, and the grinding quality can be improved.
[ embodiment 5 ]
(method of manufacturing electronic Components)
A method for manufacturing an electronic component (PoP-type semiconductor device) in embodiment 5 will be described with reference to fig. 10 a to 10 e.
First, as shown in fig. 10(a), semiconductor chips 57 are mounted on a substrate 53 via bumps 56 in a plurality of regions 55 surrounded by orthogonal lines to be processed 54. Next, a plurality of solder balls 58 serving as connection electrodes are arranged in a plurality of layers around each semiconductor chip 57. In this case, a plurality of solder balls 58 are arranged in quadruple around the semiconductor chip 57. Next, a plurality of solder balls 59 serving as external electrodes are disposed on the back surface side of the substrate 53.
Next, as shown in fig. 10(b), a sealing resin 60 is formed so as to cover the plurality of semiconductor chips 57 and the plurality of solder balls 58. Through the steps up to this point, the sealed substrate 61 is produced.
Next, for example, the sealed substrate 61 is placed on the cutting table 4 (see fig. 1) of the cutting apparatus 1. The sealed substrate 61 is ground by a grinding wheel 10 attached to a main shaft 8 (see fig. 1) as a grinding mechanism of the cutting apparatus 1. The sealed substrate 61 is ground along the processing-scheduled line 54 set for the sealed substrate 61. In this case, the sealed substrate 61 is ground until the upper portions of the solder balls 58 disposed on the substrate 53 are exposed. As a result, the opening 62 exposing the upper portion of the solder ball 58 is formed in the sealed substrate 61.
In the present embodiment, a plurality of solder balls 58 are arranged in quadruple around the semiconductor chip 57. The sealing resin 60 on the solder balls 58 arranged in quadruple is collectively ground by the grinding wheel 10, and the upper portions of the solder balls 58 are all exposed. Thus, even when the solder balls 58 are arranged at a narrow pitch, the sealing resin 60 between the solder balls 58 and the solder balls 58 can be left in this state. Therefore, the adjacent solder balls 58 can be suppressed from being short-circuited.
Next, as shown in fig. 10 d, the rotary cutter 11 attached to the spindle 9 (see fig. 1) as the cutting mechanism of the cutting apparatus 1 is disposed on the line 54 to be processed of the sealed substrate 61. The remaining portion of the sealing resin 60 and the substrate 53 are cut by the rotary blade 11 along the line 54 to be processed set for the sealed substrate 61. As a result, the cut groove 63 is formed in the sealed substrate 61. The sealed substrate 61 is cut along all the lines 54 set for processing the sealed substrate 61. Through the steps up to this point, a plurality of lower packages 64 constituting the PoP-type semiconductor device are manufactured. The steps in fig. 10(c) to 10(d) are executed by the cutting apparatus 1.
Next, as shown in fig. 10(e), the solder balls 58 for connection disposed in the lower package 64 and the solder balls 66 for connection disposed in the upper package 65 are connected to each other, whereby the PoP-type semiconductor device 67 is completed. In the upper package 65, a semiconductor chip 70 is mounted on a substrate 68 via bumps 69, and the semiconductor chip 70 is covered with a sealing resin 71.
According to the present embodiment, the grinding wheel 10 is used to uniformly expose the upper portions of the quadruple solder balls 58 arranged around the semiconductor chip 57. Therefore, even when the solder balls 58 are arranged at a narrow pitch, the adjacent solder balls 58 can be prevented from being short-circuited. Thus, the solder balls 58 can be arranged in multiple steps at a narrow pitch, and the area of the lower package 64 can be reduced.
In each embodiment, a case where a sealed substrate is used as a workpiece will be described. As the sealed substrate, a Ball Grid Array (BGA) sealed substrate, a Land Grid Array (LGA) sealed substrate, a Chip Scale Package (CSP) sealed substrate, or the like is used. Further, the present invention can be applied to a wafer level package (wafer level package).
As described above, the machining apparatus according to the embodiment is configured to machine a workpiece, and includes: a stage on which a workpiece is placed; the grinding mechanism is used for grinding the workpiece; and a measuring unit that measures a position of at least a part of the workpiece in a workpiece thickness direction, wherein the grinding unit has a grinding wheel, and the position of the grinding wheel in the workpiece thickness direction is controlled based on the measurement value measured by the measuring unit.
According to this configuration, the position of the workpiece in the workpiece thickness direction is measured by the measuring means to obtain the grinding amount of the workpiece. By determining the grinding amount of the workpiece, the position of the grinding wheel in the workpiece thickness direction of the workpiece can be controlled. Therefore, variation in the amount of grinding of the workpiece can be suppressed.
Further, in the processing apparatus according to the above-described embodiment, the measuring means includes a displacement sensor for measuring at least a height position of the workpiece.
With this configuration, the height position of the workpiece can be measured by the displacement sensor. By measuring the height position of the workpiece, the grinding amount of the workpiece can be determined.
Further, in the processing apparatus according to the above-described embodiment, the measuring means further includes an inspection means for inspecting the workpiece.
According to this configuration, the grinding state of the workpiece can be inspected by the inspection mechanism. Therefore, whether or not the workpiece is normally ground can be confirmed.
Further, in the machining apparatus according to the above-described embodiment, the grinding means further includes a 1 st grinding means for performing rough machining and a 2 nd grinding means for performing finish machining.
According to this configuration, the workpiece is roughly machined by the 1 st grinding means, and the workpiece is finely machined by the 2 nd grinding means. Therefore, the workpiece can be ground more precisely, and the grinding quality can be improved.
Further, the machining apparatus according to the above-described embodiment further includes a cutting mechanism for cutting the workpiece.
According to this configuration, the grinding of the workpiece and the cutting of the workpiece can be performed by the same apparatus in the machining apparatus. Therefore, the productivity of the processing apparatus can be improved.
Further, in the processing apparatus according to the above-described embodiment, the grinding mechanism and the cutting mechanism are provided in the grinding/cutting module.
According to this configuration, the grinding of the workpiece and the cutting of the workpiece can be performed in the grinding/cutting module. Since grinding and cutting can be performed in the same module, an increase in the area of the processing apparatus is suppressed.
Further, in the machining apparatus according to the above-described embodiment, the grinding mechanism is provided in the grinding module, and the cutting mechanism is provided in the cutting module.
According to this configuration, in the machining apparatus, the workpiece is ground by the grinding module, and the workpiece is cut by the cutting module. This enables rough machining and finish machining to be performed in the grinding module. Therefore, the workpiece can be ground more precisely.
A processing method according to the embodiment is a processing method for processing a workpiece including a substrate, a plurality of semiconductor elements mounted on the substrate, a plurality of protruding electrodes arranged around the semiconductor elements, and a sealing resin covering at least the plurality of semiconductor elements and the plurality of protruding electrodes, the processing method including: a setting step of setting a processing scheduled line on a substrate; a measuring step of measuring, by a measuring means, a position of at least a part of the workpiece in a workpiece thickness direction of the workpiece; a grinding step of grinding a workpiece by a grinding wheel; and a control step of controlling the position of the grinding wheel in the thickness direction of the workpiece based on the measurement value measured by the measurement means.
According to this method, the position of the workpiece in the workpiece thickness direction can be measured by the measuring means, and the grinding amount of the workpiece can be determined. By determining the grinding amount of the workpiece, the position of the grinding wheel in the workpiece thickness direction of the workpiece can be controlled. Therefore, variation in the amount of grinding of the workpiece can be suppressed.
Further, in the processing method according to the above-described embodiment, in the control step, the position of the grinding wheel is controlled so that the grinding wheel grinds a part of the sealing resin along the line to be processed, thereby exposing the upper portions of the plurality of projecting electrodes.
According to this method, a part of the sealing resin is ground along the processing scheduled line by the grinding wheel. Since the position of the grinding wheel is controlled based on the measurement value of the measurement means to grind the sealing resin, the upper portion of the projecting electrode can be stably exposed.
Further, in the machining method of the embodiment, the grinding step includes a 1 st grinding step of performing rough grinding and a 2 nd grinding step of performing fine grinding.
According to this method, the workpiece is roughly machined in the 1 st grinding step, and the workpiece is finely machined in the 2 nd grinding step. Therefore, the workpiece can be ground more precisely, and the grinding quality can be improved.
Further, in the processing method according to the above-described embodiment, in the grinding step, when the 1 st grinding step is performed along one scheduled processing line and then the 1 st grinding step is performed along another scheduled processing line, the 2 nd grinding step is performed along the one scheduled processing line.
According to the method, a 2 nd grinding process is performed immediately after a 1 st grinding process is performed along a predetermined processing line. Since the rough machining and the finish machining of the workpiece are continuously performed, the grinding efficiency of the workpiece can be further improved.
Further, in the machining method according to the above-described embodiment, in the measuring step, the height position of the workpiece is measured by the displacement sensor.
According to this method, the height position of the workpiece is determined by a displacement sensor. The grinding amount of the workpiece can be determined by measuring the height position of the workpiece.
Further, in the machining method according to the above-described embodiment, the measuring step includes a 1 st measuring step of measuring a height position of the workpiece before grinding and a 2 nd measuring step of measuring a height position of the workpiece after grinding, and the grinding amount of the workpiece is obtained by comparing the height positions of the workpieces measured in the 1 st measuring step and the 2 nd measuring step, respectively.
According to this method, the height position of the workpiece before grinding is measured in the 1 st measurement step, and the height position of the workpiece after grinding is measured in the 2 nd measurement step. The grinding amount of the workpiece can be determined by comparing the height position of the workpiece before grinding with the height position of the workpiece after grinding.
Further, the processing method according to the embodiment includes a cutting step of cutting the remaining portion of the sealing resin and the substrate with a rotary knife along the line to be processed.
According to this method, the workpiece is cut immediately after grinding the workpiece. Grinding and cutting can be continuously performed by the same apparatus. Therefore, the workability of the workpiece can be improved.
Further, in the processing method according to the above-described embodiment, in the cutting step, when the grinding step is performed along one scheduled processing line and then the grinding step is performed along another scheduled processing line, the cutting step is performed along the one scheduled processing line.
According to this method, the cutting step is performed immediately after the grinding step is performed along one scheduled processing line. Since the grinding and cutting of the workpiece are continuously performed, the productivity of the workpiece can be further improved.
Further, in the processing method according to the above embodiment, the plurality of protruding electrodes surround the periphery of the semiconductor element one or more times.
According to this method, the upper portions of the plurality of protruding electrodes that multiply surround the periphery of the semiconductor element are exposed collectively. Therefore, even when the plurality of protruding electrodes are arranged at a narrow pitch, short-circuiting between adjacent protruding electrodes can be suppressed.
The present invention is not limited to the above-described embodiments, and can be arbitrarily and appropriately combined, modified, or selectively employed as needed within a scope not departing from the gist of the present invention.

Claims (14)

1. A processing apparatus for grinding an opening having a constant width in a workpiece that is a resin-sealed substrate, the processing apparatus comprising:
a stage on which the workpiece is placed;
a grinding mechanism having a fixed width for grinding the sealing resin of the workpiece; and
a measuring mechanism that measures a height position of an upper surface of the workpiece before grinding and a height position of the upper surface of the workpiece after grinding when the workpiece is ground by the grinding mechanism,
the grinding mechanism is provided with a grinding wheel,
the position of the grinding wheel in the thickness direction of the workpiece when the workpiece is ground by the grinding mechanism is controlled based on a comparison between the height position of the upper surface of the workpiece before grinding, which is measured by the measuring mechanism, and the height position of the upper surface of the workpiece after grinding.
2. The processing device according to claim 1,
the measuring mechanism also measures a height position of an upper surface of the stage,
the height position of the upper surface of the table measured by the measuring means is used as a reference for the height position of the upper surface of the workpiece before grinding and the height position of the upper surface of the workpiece after grinding.
3. Machining device according to claim 1 or 2,
the measuring means includes a 1 st displacement sensor for measuring the height position of the upper surface of the workpiece before grinding, and a 2 nd displacement sensor for measuring the height position of the upper surface of the workpiece after grinding.
4. Machining device according to claim 3,
the 1 st displacement sensor and the 2 nd displacement sensor respectively measure the height position of the upper surface of the platform,
setting the height position of the upper surface of the table measured by the 1 st displacement sensor as a reference of the height position of the upper surface of the workpiece before grinding measured by the 1 st displacement sensor,
the height position of the upper surface of the table measured by the 2 nd displacement sensor is used as a reference for the height position of the upper surface of the workpiece after grinding measured by the 2 nd displacement sensor.
5. The processing device according to claim 2,
the measuring mechanism includes a 3 rd displacement sensor that measures a height position of the upper surface of the stage.
6. The processing apparatus according to any one of claims 1, 2 and 5,
the measuring means further includes an inspection means for inspecting the workpiece.
7. The processing apparatus according to any one of claims 1, 2 and 5,
the machining device further comprises a cutting mechanism for cutting the workpiece.
8. A processing method of grinding a workpiece having a substrate, a plurality of semiconductor elements mounted on the substrate, a plurality of protruding electrodes arranged around the semiconductor elements, and a sealing resin covering at least the plurality of semiconductor elements and the plurality of protruding electrodes, the processing method comprising:
a setting step of setting a line to be processed on the substrate;
a mounting step of mounting the workpiece on a stage;
a grinding step of grinding the sealing resin of the workpiece by a grinding wheel having a fixed width;
a measuring step of measuring a height position of an upper surface of the workpiece before grinding and a height position of the upper surface of the workpiece after grinding in the grinding step; and
and a control step of controlling a position of the grinding wheel in a thickness direction of the workpiece so that an upper portion of the protruding electrode disposed on the substrate is just before or just before the protruding electrode is exposed, through an opening formed in the workpiece by the grinding wheel having a fixed width, based on a comparison between the height position of the upper surface of the workpiece before grinding, which is measured in the measurement step performed when the grinding step is performed, and the height position of the upper surface of the workpiece after grinding.
9. The process according to claim 8,
in the measuring step, the height position of the upper surface of the stage is measured,
in the control step, the measured height position of the upper surface of the table is used as a reference for the height position of the upper surface of the workpiece before grinding and the height position of the upper surface of the workpiece after grinding.
10. The processing method according to claim 8 or 9,
in the measuring step, the measurement is carried out,
the height position of the upper surface of the workpiece before grinding is measured by a 1 st displacement sensor,
the height position of the upper surface of the workpiece after grinding is measured by a 2 nd displacement sensor.
11. The process of claim 10,
in the measuring step, the 1 st displacement sensor and the 2 nd displacement sensor each measure a height position of the upper surface of the stage,
setting the height position of the upper surface of the table measured by the 1 st displacement sensor as a reference of the height position of the upper surface of the workpiece before grinding measured by the 1 st displacement sensor,
the height position of the upper surface of the table measured by the 2 nd displacement sensor is used as a reference for the height position of the upper surface of the workpiece after grinding measured by the 2 nd displacement sensor.
12. The process of claim 9,
the height position of the upper surface of the platform is determined by a 3 rd displacement sensor.
13. The processing method according to any one of claims 8, 9 and 12,
in the control step, the position of the grinding wheel is controlled so that the grinding wheel grinds a part of the sealing resin along the line to be processed, thereby exposing the upper portions of the plurality of projecting electrodes.
14. The process of claim 13, further comprising:
and a cutting step of cutting the remaining portion of the sealing resin and the substrate by a rotary knife along the line to be processed.
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