CN109420979A - Processing unit (plant) and processing method - Google Patents

Processing unit (plant) and processing method Download PDF

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Publication number
CN109420979A
CN109420979A CN201810862652.4A CN201810862652A CN109420979A CN 109420979 A CN109420979 A CN 109420979A CN 201810862652 A CN201810862652 A CN 201810862652A CN 109420979 A CN109420979 A CN 109420979A
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CN
China
Prior art keywords
grinding
workpiece
hermetic sealing
sealing substrate
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810862652.4A
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Chinese (zh)
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CN109420979B (en
Inventor
藤原直己
黄善夏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Towa Corp
Original Assignee
Towa Corp
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Filing date
Publication date
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Publication of CN109420979A publication Critical patent/CN109420979A/en
Application granted granted Critical
Publication of CN109420979B publication Critical patent/CN109420979B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
    • B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
    • B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The present invention is a kind of uneven processing unit (plant) and processing method for inhibiting workpiece stock removal.Processing unit (plant) is the processing unit (plant) processed to workpiece (2), it includes the platform (4) for loading workpiece (2), the grinding mechanism (8) being ground to workpiece (2) and the measuring means (19) being measured to the position of a part of at least workpiece (2) on the thickness of workpiece direction of workpiece (2), grinding mechanism (8) has abrasive grinding wheel (10), based on the measured value measured by measuring means (19), to control position of the abrasive grinding wheel on thickness of workpiece direction.

Description

Processing unit (plant) and processing method
Technical field
The present invention relates to a kind of processing unit (plant) and processing methods.
Background technique
As conventional art, such as a kind of processing method for encapsulating (package) substrate is disclosed in patent document 1. The processing method of the package substrate is the processing method of package substrate 10, and the package substrate 10 includes multiple element chip (devicechip) 20, it is disposed in the chip region on the substrate 12 divided by the multiple segmentation preset lines (line) 25 intersected Domain；Multiple cylindrical conductor electrodes 22 are formed in the periphery of the element chip 20；And sealing layer of resin 24, coat multiple institutes Element chip 20 and the cylindrical conductor electrode 22 are stated, the processing method includes: cutting step, utilizes cutting tip (blade) 32 the sealing layer of resin 24 in the region for being at least embedded with the multiple cylindrical conductor electrode 22 is cut, with shape At the cutting slot 33 of the finishing thickness depth than package substrate 10, the end face 22a of the cylindrical conductor electrode 22 is made to be exposed to institute State the slot bottom of cutting slot 33；And grinding step is ground encapsulation base using abrasive grinding wheel 46 after implementing the cutting step The sealing layer of resin 24 of plate 10 and the multiple element chip 20 being disposed on the substrate 12, so that package substrate 10 It is thinned to the finishing thickness.
[existing technical literature]
[patent document]
[patent document 1] Japanese Patent Laid-Open 2014-220443 bulletin
Summary of the invention
[problem to be solved by the invention]
It is to cut resin seal using cutting tip 32 in the processing method of the revealed package substrate of patent document 1 Layer 24 is to form the cutting slot 33 for finishing thickness depth than package substrate 10.But the depth to the cutting slot 33 is not disclosed The mode of the mode or measurement that are controlled is spent, the depth (cutting output) of cutting slot 33 is possible to generate uneven.
The present invention solves described problem, and its purpose is to provide one kind to be able to suppress the stock removal unevenness of workpiece (work) Processing unit (plant) and processing method.
[technical means to solve problem]
In order to solve described problem, processing unit (plant) of the invention processes workpiece, and the processing unit (plant) includes: platform (table), workpiece is loaded；Grinding mechanism is ground workpiece；And measuring means, on the thickness of workpiece direction of workpiece The position of a part of at least workpiece be measured, grinding mechanism has abrasive grinding wheel, based on being determined by measuring means Measured value, to control position of the abrasive grinding wheel on thickness of workpiece direction.
In order to solve described problem, processing method of the invention processes workpiece, and the workpiece has substrate, installation In multiple semiconductor elements of substrate, multiple overshooting shape electrodes of the configuration around semiconductor element and at least cover it is multiple The sealing resin of semiconductor element and multiple overshooting shape electrodes, the processing method include: setting process, and setting adds on substrate Work preset lines；Mensuration operation, by measuring means, to the position of a part of at least workpiece on the thickness of workpiece direction of workpiece It is measured；Grinding process is ground workpiece by abrasive grinding wheel；And control process, based on what is measured by measuring means Measured value controls position of the abrasive grinding wheel on thickness of workpiece direction.
[The effect of invention]
In accordance with the invention it is possible to inhibit the unevenness of workpiece stock removal.
Detailed description of the invention
Fig. 1 is the plan view for indicating the summary of disconnecting device of embodiments of the present invention 1.
Fig. 2 (a) and Fig. 2 (b) is the synoptic diagram for indicating the structure of measuring means set in disconnecting device shown in FIG. 1, Fig. 2 (a) is the synoptic diagram of the state before indicating to be ground workpiece, and Fig. 2 (b) is to indicate to measure work in the grinding of workpiece The synoptic diagram of the state of the height and position of part.
Fig. 3 (a) to Fig. 3 (e) be indicate by measuring means shown in Fig. 2 (a) and Fig. 2 (b) come to grinding before and grinding The synoptic diagram for the process that the height and position of workpiece afterwards is measured.
Fig. 4 (a) to Fig. 4 (c) is to indicate that the synoptic diagram of hermetic sealing substrate, Fig. 4 (a) are trees used in embodiment 1 Plan view before rouge sealing, Fig. 4 (b) is the front elevation before resin seal, and Fig. 4 (c) is the front elevation after resin seal.
Fig. 5 (a) to Fig. 5 (e) is indicated using hermetic sealing substrate is partly led to manufacture PoP type shown in Fig. 4 (a) to Fig. 4 (c) The outline process profile of the process of body device.
Fig. 6 (a) to Fig. 6 (f) is indicated in embodiment 2, along processing preset lines come sequentially carry out grinding process with The outline process profile of the process of cut off operation.
Fig. 7 is the plan view for indicating the summary of disconnecting device of embodiments of the present invention 3.
Fig. 8 (a) to Fig. 8 (f) is indicated in disconnecting device shown in Fig. 7, using shown in Fig. 4 (a) to Fig. 4 (c) Hermetic sealing substrate manufactures the outline process profile of the process of PoP type semiconductor device.
Fig. 9 (a) to Fig. 9 (f) is indicated in embodiment 4, sequentially carries out thick grinding along processing preset lines With the outline process profile of the process of fine ginding processing.
Figure 10 (a) to Figure 10 (e) is indicated using hermetic sealing substrate manufactures PoP type half used in embodiment 5 The outline process profile of the process of conductor device.
The explanation of symbol
1,44: disconnecting device (processing unit (plant))
2,61: hermetic sealing substrate (workpiece)
2a: the grinding front of hermetic sealing substrate
2b: the grinding part of hermetic sealing substrate
3: substrate supply unit
4: cutting platform (platform)
5: mobile mechanism
6: rotating mechanism
7,7a, 7b, 7c: displacement sensor
8: main shaft (grinding mechanism)
8a: main shaft maintaining part
9: main shaft (cutting mechanism)
10,48,49: abrasive grinding wheel
11: rotating knife
12,13: processing water injection nozzle
14,17: video camera
15: monolithic compound
16: checking platform
18: non-defective unit pallet
19: measuring means
20: control unit
21: driving mechanism
22: video camera (inspection body)
23: suction jig
24: processing water
25,42,53,68: substrate
26,57: semiconductor chip (semiconductor element)
27,58: soldered ball (overshooting shape electrode)
28,43,60,71: sealing resin
29,56,69: convex block
30,37,59,66: soldered ball
31,31a, 31b, 31c, 31d, 31e, 54: processing preset lines
32,55: region
33,33a, 33b, 33c, 33d, 33e, 62: opening portion
34,34a, 34b, 34c, 34d, 34e, 52,63: cutting groove
35,64: lower part encapsulation
36,65: top encapsulation
38,67:PoP type semiconductor device
39: logic semiconductor chip
40: memory semiconductor chip
41: closing line
45: grinding platform (platform)
46: main shaft (the 1st grinding mechanism)
47: main shaft (the 2nd grinding mechanism)
50,50a, 50b, 50c, 50e: shallow opening portion
51,51a, 51b, 51c, 51d, 51e: deep opening portion
70: semiconductor chip
A: supplying module
B: grinding/cutting module
B1: grinding module
B2: cutting module
C: module is checked
CTL: control unit
H: the height of hermetic sealing substrate
H0: the height and position of platform is cut off
H1: the height and position of the grinding front of hermetic sealing substrate
H2: the height and position of the grinding part of hermetic sealing substrate
V: speed
X, Y, Z, θ: direction
Specific embodiment
Hereinafter, being explained with reference to embodiments of the present invention.In all attached drawings of present specification, in order to just It is appropriate to omit or exaggerate and schematically describe in understanding.For identical component parts, marks identical symbol and suitably omit Explanation.In addition, in the specification of the present application, it is so-called " semiconductor element ", include the so-called semiconductor core without sealings such as resins At least part of piece and semiconductor chip is by the form of the sealings such as resin.It is so-called " grinding " in present specification, refer to The surface of (grinding) workpiece is ground by the particle of grinding stone, it is so-called " cutting ", refer to by work piece cut (cutting) at Multiple regions.
(embodiment 1)
(structure of disconnecting device)
Referring to Fig.1, an example as processing unit (plant) of the invention, such as the structure of disconnecting device is illustrated.Such as Fig. 1 Shown, disconnecting device 1 for example has following part as each component parts, it may be assumed that supplying module A is supplied as the close of workpiece Seal substrate 2；Grinding/cutting module B, is ground and is cut off to hermetic sealing substrate 2；And check module C, to the list through cutting The monolithic compound (being equivalent to product or semi-products) of piece is checked.Each component parts is respectively equivalent to other component parts can It loads and unloads and replaceable.
In supplying module A, equipped with the substrate supply unit 3 for supplying hermetic sealing substrate 2.Hermetic sealing substrate 2 is for example with base Plate, the multiple semiconductor chips for being installed in multiple regions possessed by substrate and by it is unified cover multiple regions in a manner of and The sealing resin of formation.By the cutting of hermetic sealing substrate 2, the multiple regions of singualtion are respectively equivalent to product or semi-products.It is close Envelope substrate 2 is transported from supplying module A to grinding/cutting module B by transport mechanism (not shown).
In grinding/cutting module B, equipped with for loading cutting platform of the hermetic sealing substrate 2 to be ground and be cut off 4.On cutting platform 4, absorption for adsorb hermetic sealing substrate 2 is installed with fixture (reference Fig. 2 (a) and Fig. 2 (b)).It cuts Disconnected platform 4 can be mobile by the Y-direction of mobile mechanism 5 towards figure.And cutting platform 4 can be by rotating mechanism 6 towards the direction θ Rotation.In the top of cutting platform 4, such as equipped with the displacement sensor being measured for the height and position to cutting platform 4 7.As displacement sensor 7, such as use tangent displacement sensor, optical displacement sensor, ultrasonic type displacement sensing Device etc..
In grinding/cutting module B, if there are two main shaft (spindle) 8,9.Such as equipped with: the master as grinding mechanism Axis 8 is ground a part of hermetic sealing substrate 2；And the main shaft 9 as cutting mechanism, hermetic sealing substrate 2 is cut into Multiple regions.On main shaft 8, in order to which a part to hermetic sealing substrate 2 is ground and is equipped with thickness thick (width is big) Abrasive grinding wheel 10.On main shaft 9, the rotating knife 11 of thickness thin (width is small) is installed to cut off hermetic sealing substrate 2.
In main shaft 8, equipped with the processing water injection nozzle (nozzle) 12 to 10 injection processing water of abrasive grinding wheel and it is used for The displacement sensor 7 that the height and position of hermetic sealing substrate 2 is measured.As processing water, carried out using to abrasive grinding wheel 10 Cooling cooling water, will be because of ejected wash waters removed such as grindstone dust that grinding generates etc..Displacement sensor 7 is put down with cutting is set to The displacement sensor of 4 top of platform is identical.As shown in Figure 1, for example when looking down, displacement sensor 7 is set to the two sides of main shaft 8.Position Displacement sensor 7 can both be set to the two sides of main shaft 8, can also only be located therein side.By displacement sensor 7, can be to grinding before At least part the height and position of hermetic sealing substrate 2, at least part after grinding the height and position of hermetic sealing substrate 2 and have been cut The height and position of disconnected platform 4 is measured.
In turn, it can be taken the photograph be used to image the surface state of at least part after grinding hermetic sealing substrate 2 Camera (camera) (referring to Fig. 2 (a) and Fig. 2 (b)) is set to main shaft 8.In video camera, such as it is incorporated with charge-coupled device (Charge Coupled Device, CCD), complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) sensor etc., using as photographing element.
On main shaft 9, equipped with the processing water injection nozzle 13 to 11 injection processing water of rotating knife and for by rotating knife The video camera 14 that the cutting groove (grooving) of the hermetic sealing substrate 2 of 11 cuttings is imaged.As processing water, inhibition rotating knife is used The cutting water of 11 blocking, cooling cooling water is carried out to rotating knife 11, the end material etc. generated by cutting is removed it is clear Wash water etc..
Disconnecting device 1 is provided with the bis- main shaft (single of single platform-of a cutting platform 4 and two main shafts 8,9 Table-twin spindle) structure disconnecting device.Main shaft 8,9 can separately in X direction and Z-direction is mobile.Pass through Move cutting platform 4 relatively with main shaft 8, to be ground hermetic sealing substrate 2 using abrasive grinding wheel 10.By keeping cutting flat Platform 4 is relatively moved with main shaft 9, to cut off hermetic sealing substrate 2 using rotating knife 11.
In present embodiment, following situations are illustrated: in grinding/cutting module B, being respectively provided with one to hermetic sealing substrate 2 be ground as the main shaft 8 of grinding mechanism and the main shaft 9 as cutting mechanism of cutting hermetic sealing substrate 2.And it is unlimited In this, can be provided as grinding mechanism carries out two main shafts of roughing and finishing and as cutting mechanism respectively One main shaft.Further, it is possible to each settings two as grinding mechanism and the main shaft of cutting mechanism.
It in checking module C, is equipped with and checks platform 16, the inspection platform 16 cuts off hermetic sealing substrate 2 for loading And multiple monolithic compounds 15 (being equivalent to product or semi-products) of singualtion are to be checked.By transport mechanism (not shown), By multiple monolithic compounds 15 from the unified conveying to inspection platform 16 of cutting platform 4.Multiple monolithic compounds 15 are used by checking Video camera 17 check surface state etc..
The monolithic compound 15 that platform 16 checks on inspection is divided into non-defective unit and defective products.(do not schemed by transfer mechanism Show), non-defective unit by transfer storage to non-defective unit pallet (tray) 18, (do not schemed by transfer sending and receiving to defective products pallet by defective products Show).
Control unit CTL is equipped in supplying module A.The movement of control unit CTL control disconnecting device 1, hermetic sealing substrate 2 Conveying, the grinding and cutting of hermetic sealing substrate 2, the conveying of the monolithic compound 15 through cutting off, the inspection and storage of monolithic compound 15 Deng.In present embodiment, control unit CTL is set in supplying module A.It is not limited to this, control unit CTL can also be set to other Module.Moreover, control unit CTL also may be partitioned into it is multiple, and be set to supplying module A, grinding/cutting module B and check module C in At least two modules in.
(structure of measuring means)
Illustrate that the stock removal to the hermetic sealing substrate 2 being ground through abrasive grinding wheel 10 is surveyed referring to Fig. 2 (a) and Fig. 2 (b) The structure of fixed and control measuring means.In addition, for convenience, in hermetic sealing substrate 2, using the part before grinding as mill Justice defines for the grinding front 2a of hermetic sealing substrate 2, using the part after grinding as milled portion depending on cutting preceding part For the grinding part 2b of hermetic sealing substrate 2.
As shown in Fig. 2 (a) and Fig. 2 (b), main shaft 8 is located at the main shaft maintaining part 8a for keeping main shaft.Measuring means 19 is for example Include two displacement sensor 7a, 7b set on main shaft maintaining part 8a, the displacement sensor 7c set on cutting platform 4 and control Portion 20.Two displacement sensors 7a, 7b set on main shaft maintaining part 8a may be either with the displacement sensor 7c for being set to cutting platform 4 The displacement sensor of identical type can also be different types of displacement sensor.As displacement sensor, such as use optical profile type Displacement sensor.It is also desirable to make the datum mark of displacement sensor 7a, 7b, 7c in the surface position of cutting platform 4 in advance Set etc. it is consistent, to eliminate the error between each displacement sensor.
By going up and down main shaft maintaining part 8a along Z-direction, thus 10 edge of main shaft 8 and abrasive grinding wheel Z-direction lifting.By made using driving mechanism 21 main shaft 8 decline, thus to abrasive grinding wheel 10 hermetic sealing substrate 2 thickness Lower end position on direction (with part shown in h in figure) is controlled.Main shaft 8 and abrasive grinding wheel 10 can pass through driving mechanism (not shown) and move in X direction.
As shown in Fig. 2 (b), by making abrasive grinding wheel 10 decline fixed amount towards -Z direction, exist to set abrasive grinding wheel 10 Lower end position on the thickness direction of hermetic sealing substrate 2.By making the counterclockwise high speed rotation of abrasive grinding wheel 10, and make to cut Disconnected platform 4 is mobile towards +Y direction, to be ground hermetic sealing substrate 2 using abrasive grinding wheel 10.
Displacement sensor 7a is primarily used for before grinding hermetic sealing substrate 2, hermetic sealing substrate 2 grinding front 2a The sensor that is measured of height and position.Displacement sensor 7b is primarily used for after grinding hermetic sealing substrate 2, close Seal the sensor that the height and position of the 2b of grinding part of substrate 2 is measured.Displacement sensor 7c is for cutting platform 4 The sensor that height and position is measured.Control is stored in by each height and position that displacement sensor 7a, 7b, 7c are measured In portion 20, calculation process is carried out by control unit 20.
By the height and position of the grinding front 2a to the hermetic sealing substrate 2 measured by displacement sensor 7a and by position The height and position of the 2b of grinding part for the hermetic sealing substrate 2 that displacement sensor 7b is measured is compared, and can be found out and sealed base The stock removal of plate 2.Displacement sensor 7a, 7b can also be measured the height and position of cutting platform 4.In turn, it is protected in main shaft The outside for holding displacement sensor 7b set on portion 8a, can be arranged the surface for the 2b of grinding part to hermetic sealing substrate 2 The video camera 22 that state is checked.In addition, displacement sensor 7a, 7b and video camera 22 are provided at main shaft holding for stringent Portion 8a, but in the specification of the present application, for convenience, also says sometimes and be set to main shaft 8.
On cutting platform 4, it is equipped with for adsorbing the suction jig 23 for keeping hermetic sealing substrate 2.2 quilt of hermetic sealing substrate It is placed on suction jig 23 and is adsorbed on cutting platform 4.When being ground hermetic sealing substrate 2, from processing water injection nozzle 12 Carry out injection processing water 24 towards the processing stand of hermetic sealing substrate 2 and abrasive grinding wheel 10.
(measuring method of stock removal)
Referring to Fig. 3 (a) to Fig. 3 (e), to measuring the stock removal of hermetic sealing substrate 2 by measuring means 19 and control mill The method for the amount of cutting is illustrated.In addition, into Fig. 3 (e), for convenience, driving mechanism 21, processing water injection is omitted in Fig. 3 (a) Nozzle 12, control unit 20 and displacement sensor 7c.
Firstly, making abrasive grinding wheel 10 towards the inverse time by being set to the spindle motor (not shown) of main shaft 8 as shown in Fig. 3 (a) Needle direction high speed rotation.Next, declining main shaft 8 towards -Z direction Fixed amount.In this stage, from the surface set abrasive grinding wheel 10 of hermetic sealing substrate 2 on the thickness direction of hermetic sealing substrate 2 Lower end position.In other words, decline main shaft 8 from the surface of hermetic sealing substrate 2, so that the lower end position alignment of abrasive grinding wheel 10 is solid The position of fixed depth d0.The depth d0 is equivalent to the stock removal that hermetic sealing substrate 2 is ground.In this way, to grinding The target cut amount (grinding depth) of hermetic sealing substrate 2 is controlled.
Next, keeping cutting platform 4 mobile towards +Y direction with fixed speed v.When cutting platform 4 passes through displacement sensor When the lower section of 7a, the height and position h0 of cutting platform 4 is measured by displacement sensor 7a.The height and position of platform 4 will be cut off H0 is set as the altitude datum position of displacement sensor 7a.The height and position h0 of the cutting platform 4 is set to be stored in control unit 20 In (referring to Fig. 2 (a) and Fig. 2 (b)).
Next, making to cut off platform 4 further towards +Y direction movement as shown in Fig. 3 (b).When the grinding of hermetic sealing substrate 2 When front 2a passes through the lower section of displacement sensor 7a, the height and position h1 of grinding front 2a is measured by displacement sensor 7a. It is stored in the height and position h1 of the grinding front 2a in control unit 20 (referring to Fig. 2 (a) and Fig. 2 (b)).The grinding front The height and position h1 of 2a is equivalent to the relative altitude position before being ground hermetic sealing substrate 2.For stringent, hermetic sealing substrate 2 The difference (h1-h0) for being ground the height and position h1 of front 2a and the height and position h0 of cutting platform 4 is equivalent to from cutting platform 4 Height of the surface until the surface of the grinding front 2a of hermetic sealing substrate 2.Pass through in the grinding front 2a of hermetic sealing substrate 2 During below displacement sensor 7a, the height and position h1 of grinding front 2a is continuously measured always.
Next, making to cut off platform 4 further towards +Y direction movement as shown in Fig. 3 (c).Pass through the mill of hermetic sealing substrate 2 It cuts front 2a to contact with abrasive grinding wheel 10, is ground fixed amount to fixed depth from surface to be ground front 2a and be ground grinding wheel 10 Until spending d0.The grinding front 2a of hermetic sealing substrate 2 forms the grinding part of hermetic sealing substrate 2 by abrasive grinding wheel 10 as a result, 2b。
When keeping cutting platform 4 further mobile towards +Y direction, cutting platform 4 passes through the lower section of displacement sensor 7b.When When cutting off lower section of the platform 4 by displacement sensor 7b, the height and position of cutting platform 4 is measured by displacement sensor 7b h0.The height and position h0 for cutting off platform 4 is set as to the altitude datum position of displacement sensor 7b.Make the cutting platform 4 Height and position h0 is stored in control unit 20 (referring to Fig. 2 (a) and Fig. 2 (b)).If keeping the datum mark of displacement sensor 7a, 7b pre- It is first consistent, then the height and position h0 for the cutting platform 4 that displacement sensor 7b is measured, the cutting measured with displacement sensor 7a Essentially identical value will be presented in the height and position h0 of platform 4.
Next, making to cut off platform 4 further towards +Y direction movement as shown in Fig. 3 (d).When the mill of hermetic sealing substrate 2 When cutting lower section of the portion 2b by displacement sensor 7b, the height and position h2 of grinding part 2b is measured by displacement sensor 7b. It is stored in the height and position h2 of the grinding part 2b in control unit 20 (referring to Fig. 2 (a) and Fig. 2 (b)).Hermetic sealing substrate 2 The 2b of grinding part height and position h2 and cutting platform 4 height and position h0 difference (h2-h0) be equivalent to from cutting platform 4 Height of the surface until the surface of the 2b of grinding part of hermetic sealing substrate 2.It is logical in the 2b of grinding part of hermetic sealing substrate 2 It crosses during below displacement sensor 7b, continuously measures the height and position h2 of grinding part 2b always.
If the height and position h0 for the cutting platform 4 that displacement sensor 7a and displacement sensor 7b are measured is identical value, The hermetic sealing substrate then measured by the height and position h1 of the grinding front 2a to hermetic sealing substrate 2 and by displacement sensor 7b The height and position h2 of 2 2b of grinding part is compared, and just can simply find out the stock removal d of hermetic sealing substrate 2.
Displacement sensor 7a measured from cutting platform 4 surface until hermetic sealing substrate 2 be ground front 2a table The surface from cutting platform 4 that height (h1-h0) until face and displacement sensor 7b are measured up to hermetic sealing substrate 2 The difference of height (h2-h0) until the surface of grinding part 2b, is equivalent to the stock removal d of hermetic sealing substrate 2.Therefore, it has sealed The stock removal d of substrate 2 is d=(h1-h0)-(h2-h0)=(h1-h2).Therefore, if cutting of being measured of displacement sensor 7a, 7b The height and position h0 of disconnected platform 4 is identical value, then can according to the height and position h1 of the grinding front 2a of hermetic sealing substrate 2 with The difference (h1-h2) of the height and position h2 of the 2b of grinding part of hermetic sealing substrate 2, to find out the stock removal d of hermetic sealing substrate 2.
Even if in the different feelings of the height and position h0 for the cutting platform 4 that displacement sensor 7a and displacement sensor 7b are measured Under condition, by finding out the surface from cutting platform 4 that displacement sensor 7a measured respectively before the grinding of hermetic sealing substrate 2 Height until the surface of portion 2a, the surface from cutting platform 4 measured with displacement sensor 7b are up to hermetic sealing substrate 2 Height until the surface of grinding part 2b, and they are compared, it can also find out the stock removal of hermetic sealing substrate 2.It is logical It crosses control unit 20 and carries out calculation process, the stock removal of hermetic sealing substrate 2 can be found out.
By finding out respectively like this, the height and position h1 of the grinding front 2a of hermetic sealing substrate 2, hermetic sealing substrate 2 has been The height and position h2 of the grinding part 2b and height and position h0 for cutting off platform 4, can find out the stock removal of hermetic sealing substrate 2.
In present embodiment, since hermetic sealing substrate 2 is by the time point below displacement sensor 7a, always continuously Measure the height and position h1 of the grinding front 2a of hermetic sealing substrate 2.Similarly, pass through displacement sensor 7b from hermetic sealing substrate 2 The time point of lower section continuously measures always the height and position h2 of the 2b of grinding part of hermetic sealing substrate 2.Therefore, pass through To the height and position h2 of the height and position h1 and the 2b of grinding part of hermetic sealing substrate 2 of the grinding front 2a of hermetic sealing substrate 2 into Row compares, and can continuously measure the stock removal d=(h1-h2) of hermetic sealing substrate 2 always.
Since cutting platform 4 is with fixed speed v movement, displacement sensor 7a, 7b will be away from hermetic sealing substrate 2 End be same distance position at separately and continuously measure hermetic sealing substrate 2 grinding front 2a height and position h1, The height and position h2 of the 2b of grinding part of hermetic sealing substrate 2.Therefore, pass through the hermetic sealing substrate 2 to 20 METHOD FOR CONTINUOUS DETERMINATION of control unit The height and position h2 of the height and position h1 of grinding front 2a, grinding part 2b carry out calculation process, can precisely measure The stock removal d of herein-this time point (in situ) hermetic sealing substrate 2.Therefore, it can accurately grasp always and seal base The stock removal d of plate 2.
Next, making to cut off platform 4 further towards +Y direction movement as shown in Fig. 3 (e).When the mill of hermetic sealing substrate 2 When cutting lower section of the portion 2b by video camera 22, grinding part 2b is imaged by video camera 22.Thereby, it is possible to check Whether the grinding status of the 2b of grinding part of hermetic sealing substrate 2 is without exception.
By two displacement sensors 7a, the 7b and the camera shooting that are provided as measuring means 19 on the main shaft 8 of disconnecting device 1 Machine 22 can continuously measure the stock removal d of hermetic sealing substrate 2, so as to accurately grasp the mill of hermetic sealing substrate 2 always The amount of cutting d.In turn, the grinding status of the 2b of grinding part of hermetic sealing substrate 2 can be confirmed by video camera 22 always.Therefore, It deposits in an exceptional case, can be found early in the grinding of hermetic sealing substrate 2.
The series of actions is the movement that hermetic sealing substrate 2 is ground to fixed amount by being once ground so far. In the case where target cut amount (grinding depth) can not be ground to by being once ground, then such movement is repeated, from And it will be until hermetic sealing substrate 2 be ground to target cut amount.In present embodiment, position set in measuring means 19 can be passed through Displacement sensor 7a, 7b carry out the stock removal d of METHOD FOR CONTINUOUS DETERMINATION hermetic sealing substrate 2.Pass through the grinding of feedback (feedback) measurement Amount, can be adjusted to control stock removal the lower end position of abrasive grinding wheel 10.
It is that two displacement sensors 7a, 7b as measuring means 19 are set to main shaft 8 in present embodiment.And it is unlimited In this, a displacement sensor can also be set to main shaft.At this point, platform 4 is cut off in measurement respectively by a displacement sensor The height and position h1 of the grinding front 2a of height and position h0, hermetic sealing substrate 2 and the height of the 2b of grinding part of hermetic sealing substrate 2 Position h2.Calculation process is carried out to these measured values using control unit 20, thereby, it is possible to find out the grinding of hermetic sealing substrate 2 Amount.
In present embodiment, in order to measure the height and position of cutting platform 4, it also is provided with being displaced in the top of cutting platform 4 Sensor 7c.Processing water for example can be also detected as a result, to the cooling of cutting platform 4 or because cutting off platform 4 caused by processing heat Fever etc. influence.Therefore, even if cutting platform 4 is stretched or deformed, the height of cutting platform 4 can be also grasped always Spend position.Thereby, it is possible to which the variation for cutting off the height and position of platform 4 is modified to the height and position of hermetic sealing substrate 2, to ask The stock removal of hermetic sealing substrate 2 out.In addition, can be saved if the variation of the height and position of cutting platform 4 is the range that can ignore that Slightly displacement sensor 7c.
In present embodiment, make cut off platform 4 height and position h0, hermetic sealing substrate 2 grinding front 2a height position It sets h1 and the height and position h2 of the 2b of grinding part of hermetic sealing substrate 2 is respectively stored in control unit 20 set in measuring means 19 In, the stock removal d of hermetic sealing substrate 2 is found out based on these measured values.It is not limited to this, these measured values can also be made to be stored in In disconnecting device 1 in set control unit CTL (referring to Fig.1), to find out the stock removal of hermetic sealing substrate 2.
(structure of hermetic sealing substrate)
Referring to Fig. 4 (a) to Fig. 4 (c), to the structure of hermetic sealing substrate is illustrated used in present embodiment.Such as Shown in Fig. 4 (c), hermetic sealing substrate 2 has: substrate 25；Multiple semiconductor chips 26, are mounted on the main surface side of substrate 25；It is multiple As the soldered ball 27 of overshooting shape electrode, configure around semiconductor chip 26；And sealing resin 28, it multiple is partly led with covering The mode of body chip 26 and multiple soldered balls 27 and formed.Semiconductor chip 26 is for example connected to substrate 25 via convex block 29.? The back side of hermetic sealing substrate 2, equipped with the multiple soldered balls 30 for becoming external electrode.Hermetic sealing substrate 2 is that have in a thickness direction There is the hermetic sealing substrate of height h.Hermetic sealing substrate 2 is, for example, to constitute stacked package for making shown in present embodiment The hermetic sealing substrate of the lower part encapsulation of (Package on Package, PoP) type semiconductor device.
As shown in Fig. 4 (a), each semiconductor chip 26 is to set with multiple soldered balls 27 of the configuration around semiconductor chip 26 By virtually setting and in 31 area defined 32 of a plurality of processing preset lines intersected with each other on substrate 25.A plurality of processing is pre- Alignment 31 is by confirming the alignment being located on substrate 25 to mutatis mutandis video camera (not shown) using set in disconnecting device 1 (alignment mark) (not shown) etc. is marked, to set on substrate 25 as virtual processing preset lines.By more The multiple regions 32 that item processing preset lines 31 are surrounded are equivalent to the lower part encapsulation for constituting PoP type semiconductor device.In addition, configuration Overshooting shape electrode around semiconductor chip 26 is not limited to soldered ball.For example, as long as there is conduction comprising copper (Cu) etc. The overshooting shape electrode of property.
(manufacturing method of electronic component)
Referring to Fig. 5 (a) to Fig. 5 (e), to the manufacturer of the electronic component (PoP type semiconductor device) in present embodiment Method is illustrated.
Firstly, installing multiple semiconductors respectively via convex block 29 in the multiple regions 32 of substrate 25 as shown in Fig. 5 (a) Chip 26.Next, being configured as multiple soldered balls 27 of connection overshooting shape electrode around each semiconductor chip 26. Next, being configured as multiple soldered balls 30 of external electrode in the back side of substrate 25.
Next, as shown in Fig. 5 (b), it is close to be formed in a manner of covering multiple semiconductor chips 26 and multiple soldered balls 27 Seal resin 28.By process so far, hermetic sealing substrate 2 are made.In addition, being to form sealing tree in present embodiment Multiple soldered balls 30 of external electrode are configured as before rouge 28.It is not limited to this, can also be configured after forming sealing resin 28 Multiple soldered balls 30.
Next, being loaded on the cutting platform 4 (referring to Fig.1~Fig. 3 (e)) of disconnecting device 1 close as shown in Fig. 5 (c) Seal substrate 2.In Fig. 3 (c) into Fig. 3 (d), cutting platform 4 is omitted.By the main shaft 8 as the grinding mechanism of disconnecting device 1 The abrasive grinding wheel 10 installed on (referring to Fig.1~Fig. 3 (e)) is configured in the processing preset lines 31 to the setting of hermetic sealing substrate 2. Along the processing preset lines 31 set to hermetic sealing substrate 2, the sealing resin 28 in hermetic sealing substrate 2 is ground fixed amount.This When, until sealing resin 28 to be ground to the top exposing for being configured at multiple soldered balls 27 of substrate 25.Abrasive grinding wheel 10 at least has Having can be to the width that sealing resin 28 of the configuration on multiple soldered balls 27 of processing 31 two sides of preset lines is ground.
The grinding of sealing resin 28 is measured by measuring means 19 (referring to Fig. 2 (a)~Fig. 3 (e)) set on main shaft 8 Amount, sealing resin 28 is ground using abrasive grinding wheel 10, until the top of soldered ball 27 is exposed.As a result, having sealed base On plate 2, the opening portion 33 for exposing the top of soldered ball 27 is formed.In turn, by video camera 22 set on main shaft 8 (referring to Fig. 2 (a)~Fig. 3 (e)) confirm whether the top of soldered ball 27 exposes.
In this way, having been sealed along all processing preset lines 31 (referring to Fig. 4 (a)) set to hermetic sealing substrate 2 to be ground Substrate 2.As a result, forming multiple opening portions 33 along a plurality of processing preset lines 31 set to hermetic sealing substrate 2.By extremely Process until this, grinding process are completed.
Next, as shown in Fig. 5 (d), after the completion of grinding process, by the main shaft 9 as the cutting mechanism of disconnecting device 1 (referring to Fig.1) rotating knife 11 installed on is configured in the processing preset lines 31 of the setting of opening portion 33 to hermetic sealing substrate 2. By rotating knife 11, cut off along the processing preset lines 31 set to hermetic sealing substrate 2 sealing resin 28 remainder and Substrate 25.As a result, forming cutting groove 34 on hermetic sealing substrate 2.
Hermetic sealing substrate 2 are cut off along all processing preset lines 31 (referring to Fig. 4 (a)) set to hermetic sealing substrate 2. As a result, by multiple cutting grooves 34, hermetic sealing substrate 2 is singulated as each region 32.Pass through process so far, manufacture Constitute multiple lower parts encapsulation 35 of PoP type semiconductor device.The process of Fig. 5 (c) to Fig. 5 (d) is executed by disconnecting device 1.
Next, by the connection soldered ball 27 for being configured at lower part encapsulation 35 and being configured at top encapsulation as shown in Fig. 5 (e) 36 connection soldered ball 37 is connected, and is completed as a result, as the PoP type semiconductor device 38 of a mode of electronic component. E.g. logic (logic) semiconductor chip 39 is laminated with memory semiconductor chip 40 for top encapsulation 36, and will be each A semiconductor chip is connected to substrate 42 via closing line 41.Logic semiconductor chip 39 and memory semiconductor chip 40 by Sealing resin 43 is covered.
In present embodiment, multiple semiconductor chips 26 are separately installed with via convex block 29 on substrate 25.And it is unlimited It, can also be by the semiconductor element mounting being sealed by resin in substrate in this.Further, it is possible to be set as installing multiple semiconductor cores The multi-module structure of piece or multiple semiconductor elements.In present specification, semiconductor chip is also contained in semiconductor element In one mode.
In present embodiment, the sealing resin 28 that is ground by abrasive grinding wheel 10 on soldered ball 27.Further, it is possible to use Abrasive grinding wheel 10 carrys out the sealing resin 28 on grinded semiconductor chip 26.In turn, as long as being equipped with partly leading through resin seal The case where volume elements part, other than sealing resin 28, can also be ground installed semiconductor element by abrasive grinding wheel 10 A part.
(function and effect)
One mode, that is, disconnecting device 1 of the processing unit (plant) of present embodiment uses following structures, that is, a kind of processing dress It sets, the hermetic sealing substrate 2 for becoming workpiece is processed, the processing unit (plant) includes: cutting platform 4, and mounting has sealed base Plate 2；As the main shaft 8 of grinding mechanism, hermetic sealing substrate 2 is ground；And measuring means 19, to hermetic sealing substrate 2 On thickness direction at least the position of a part of hermetic sealing substrate 2 has been measured, main shaft 8 have abrasive grinding wheel 10, based on by The measured value that measuring means 19 is determined, to control position of the abrasive grinding wheel 10 on the thickness direction of hermetic sealing substrate 2.
The processing method of present embodiment processes the hermetic sealing substrate 2 as workpiece, and the hermetic sealing substrate 2 has There are substrate 25, the multiple semiconductor chips 26 as semiconductor element for being installed on substrate 25, configuration at semiconductor chip 26 weeks Multiple soldered balls 27 as overshooting shape electrode for enclosing and the sealing at least covering multiple semiconductor chips 26 and multiple soldered balls 27 Resin 28, the processing method include: setting process, set processing preset lines 31 to substrate 25；Mensuration operation passes through measuring machine Structure 19, on the thickness direction of hermetic sealing substrate 2 at least the position of a part of hermetic sealing substrate 2 has been measured；It is ground work Sequence is ground hermetic sealing substrate 2 by abrasive grinding wheel 10；And control process, based on the measurement measured by measuring means 19 Value, controls position of the abrasive grinding wheel 10 on the thickness direction of hermetic sealing substrate 2.
According to this configuration, disconnecting device 1 has the main shaft 8 being ground to hermetic sealing substrate 2.Main shaft 8 has to close Seal the abrasive grinding wheel 10 being ground of substrate 2 and the measuring means 19 being measured to the stock removal of hermetic sealing substrate 2.Pass through Measuring means 19 measures the height and position of hermetic sealing substrate 2, to find out the stock removal of hermetic sealing substrate 2.By finding out grinding Amount, to control position of the abrasive grinding wheel 10 on the thickness direction of hermetic sealing substrate 2.Therefore, it is able to suppress close The stock removal for sealing substrate 2 is uneven.
More specifically, according to the present embodiment, disconnecting device 1 has and is ground to a part of hermetic sealing substrate 2 The main shaft 8 as grinding mechanism.Main shaft 8 has the abrasive grinding wheel 10 big to the width that hermetic sealing substrate 2 is ground and right The measuring means 19 that the stock removal for the hermetic sealing substrate 2 being ground through abrasive grinding wheel 10 is measured.Measuring means 19 includes to be set to Two displacement sensors 7a, 7b and control unit 20 of main shaft 8.Hermetic sealing substrate 2 is measured by two displacement sensors 7a, 7b It is ground the height and position h2 of the height and position h1 and the 2b of grinding part of hermetic sealing substrate 2 of front 2a.By to these height positions It sets h1, h2 to be compared, finds out the stock removal d of hermetic sealing substrate 2.By displacement sensor 7a, 7b, it can find out and seal base The accurate stock removal d of plate 2.Thereby, it is possible to control to depth of the abrasive grinding wheel 10 on the thickness direction of hermetic sealing substrate 2 System.Therefore, the stock removal for being able to suppress hermetic sealing substrate 2 is uneven.
According to the present embodiment, it by being set to two displacement sensors 7a, 7b of main shaft 8, has been sealed continuously to measure The height and position h2 of the height and position h1 and the 2b of grinding part of hermetic sealing substrate 2 of the grinding front 2a of substrate 2.Therefore, can Continuously measure the stock removal d of herein-this time point (in situ) hermetic sealing substrate 2.Therefore, it can precisely ask The stock removal d of hermetic sealing substrate 2 out.And the stock removal d of hermetic sealing substrate 2 can be grasped always.Thereby, it is possible to will be by measuring Stock removal calculated by mechanism 19 precisely feeds back to depth of the abrasive grinding wheel 10 on the thickness direction of hermetic sealing substrate 2 Position.
According to the present embodiment, the stock removal d of hermetic sealing substrate 2 can be continuously measured, therefore can be grasped always The stock removal d of hermetic sealing substrate 2.As a result, for example, even if also can in the case where stock removal is reduced due to abrasive grinding wheel 10 is worn It is enough that this variation is detected by measuring means 19.Therefore, even if passing through feedback in the case where abrasion has occurred in abrasive grinding wheel 10 The stock removal can also adjust the position of abrasive grinding wheel 10 to control stock removal.
According to the present embodiment, in disconnecting device 1, it is provided as the main shaft 8 of grinding mechanism and as cutting mechanism Main shaft 9.Therefore, the grinding of hermetic sealing substrate 2 can be carried out in the same apparatus and cuts off the two processes.It does not need as previous Prepare grinding attachment and both devices of disconnecting device like that, therefore is able to suppress equipment cost.In addition to this, it is able to suppress electricity The manufacturing cost of sub- part.And it can be improved the productivity of disconnecting device 1.
According to the present embodiment, the video camera 22 imaged to the state of the 2b of grinding part of hermetic sealing substrate 2 is set. Therefore, the surface state for capableing of the 2b of grinding part to hermetic sealing substrate 2 checks.As a result, in PoP type semiconductor device 38 Manufacture in, can clearly confirm whether the top of soldered ball 27 for being configured at lower part encapsulation 35 normally exposes.Therefore, can press down System because hermetic sealing substrate 2 stock removal deficiency caused by undesirable generation.
(embodiment 2)
(processing method of hermetic sealing substrate)
The grinding work of hermetic sealing substrate 2 is well performed to efficiency in embodiment 2 to Fig. 6 (f) referring to Fig. 6 (a) The processing method of sequence and cut off operation is illustrated.With embodiment 1 the difference is that: it is enterprising in a processing preset lines After row grinding process, cut off operation is also and then carried out.Process in addition to this is identical as embodiment 1, therefore omits and say It is bright.
Firstly, the abrasive grinding wheel 10 for being installed on main shaft 8 (referring to Fig.1) is configured in hermetic sealing substrate 2 as shown in Fig. 6 (a) Outermost setting processing preset lines 31a on.Next, declining abrasive grinding wheel 10, it is ground along processing preset lines 31a Hermetic sealing substrate 2.By abrasive grinding wheel 10, opening portion 33a is formed on processing preset lines 31a.In this process, it is installed on master The rotating knife 11 of axis 9 (referring to Fig.1) is standby except hermetic sealing substrate 2.
Next, keeping main shaft 8,9 mobile as shown in Fig. 6 (b), abrasive grinding wheel 10 is configured on processing preset lines 31b, Rotating knife 11 is configured on processing preset lines 31a.Next, declining abrasive grinding wheel 10, ground along processing preset lines 31b Hermetic sealing substrate 2 are cut, opening portion 33b is formed.Meanwhile decline rotating knife 11, it has been sealed along processing preset lines 31a to cut off Substrate 2.Cutting groove 34a is formed along processing preset lines 31a.
Next, keeping main shaft 8,9 mobile as shown in Fig. 6 (c), abrasive grinding wheel 10 is configured on processing preset lines 31c, Rotating knife 11 is configured on processing preset lines 31b.Next, declining abrasive grinding wheel 10, ground along processing preset lines 31c Hermetic sealing substrate 2 are cut, opening portion 33c is formed.Meanwhile decline rotating knife 11, it has been sealed along processing preset lines 31b to cut off Substrate 2.Cutting groove 34b is formed along processing preset lines 31b.
As shown in Fig. 6 (d) to Fig. 6 (f), by sequentially repeating this process, thus along all processing preset lines 31a~ 31e forms opening portion 33a~33e and cutting groove 34a~34e.It is predetermined for the processing orthogonal with processing preset lines 31a~31e Line also implements same process, and 2 monolithic of hermetic sealing substrate is turned to each region as a result,.
According to the present embodiment, continuously implement grinding process and cut off operation using two main shafts 8,9.Add at one After the grinding process for carrying out abrasive grinding wheel 10 in work preset lines, the cut off operation of rotating knife 11 is followed by carried out.Thereby, it is possible to make Grinding process and cut off operation are carried out well with the disconnecting device 1 of double main axle structures come efficiency.Therefore, it can be improved cutting dress Set 1 productivity.
(embodiment 3)
(structure of disconnecting device)
Referring to Fig. 7, the structure of another example, that is, disconnecting device of the processing unit (plant) of embodiment 3 is illustrated.With implementation Disconnecting device 1 shown in mode 1 the difference is that, by grinding/cutting module B be divided further into grinding module and cutting Module.Structure in addition to this is identical as embodiment 1, and and the description is omitted.
As shown in fig. 7, disconnecting device 44 has following part as each component parts, it may be assumed that supplying module A is supplied close Seal substrate 2；It is ground module B1, hermetic sealing substrate 2 is ground；Module B2 is cut off, hermetic sealing substrate 2 are cut off；And it checks Module C, to through cutting and the monolithic compound of singualtion checks.Each component parts can respectively be filled relative to other component parts It unloads and replaceable.Supplying module A and inspection module C are identical as embodiment 1.
In grinding module B1, equipped with for loading grinding platform 45 of the hermetic sealing substrate 2 to be ground.It is ground platform 45 with shown in embodiment 1 cutting platform 4 it is identical, mobile mechanism 5, rotating mechanism 6 and displacement sensor 7 also with embodiment 1 is identical.
In grinding module B1, equipped with two main shafts 46,47 as grinding mechanism.Such as equipped with: for having sealed Substrate 2 carries out rough machined main shaft 46；And the main shaft 47 for being finished to hermetic sealing substrate 2.By being used separately It is installed on the abrasive grinding wheel of main shaft 46,47, roughing or finishing can be carried out to hermetic sealing substrate 2.It is ground by making to constitute The type or granularity (quantity of abrasive grain) of the abrasive grain of grinding wheel optimize, so as to carry out roughing or essence to hermetic sealing substrate 2 Processing.
For example, by optimizing granularity (quantity of abrasive grain), so as to carry out roughing or essence to hermetic sealing substrate 2 Processing.By installing the abrasive grinding wheel 48 of granularity small (quantity of abrasive grain is few) on main shaft 46, hermetic sealing substrate 2 can be carried out Roughing.By installing the abrasive grinding wheel 49 of granularity big (quantity of abrasive grain is more) on main shaft 47, can to hermetic sealing substrate 2 into Row finishing.
As another method, by selecting the type of abrasive grain, roughing or finishing can be carried out to hermetic sealing substrate 2. For example, the super abrasive grain as hardness highest (hard), using diamond (diamond), cBN (cubic boron nitride) etc., thereby, it is possible to Roughing is carried out to hermetic sealing substrate 2.As hardness (soft) general abrasive grain lower than super abrasive grain, such as use GC grinding stone (Green Silicon Carbide: green silicon carbide system grinding stone) etc., thereby, it is possible to finish to hermetic sealing substrate 2.
In main shaft 46,47, equipped with to abrasive grinding wheel 48,49 distinguish injection processing water processing water injection nozzle 12 and The displacement sensor 7 being measured for the height and position to hermetic sealing substrate 2.Shown in displacement sensor 7 and embodiment 1 Displacement sensor is identical.In this case, displacement sensor 7 is also respectively provided at the two sides of main shaft 46,47.By displacement sensor 7, It is capable of the height and position h1 and the height and position of the 2b of grinding part of hermetic sealing substrate 2 of grinding front 2a to hermetic sealing substrate 2 H2 (referring to Fig. 2 (a)~Fig. 3 (e)) is measured.In turn, the table for the 2b of grinding part to hermetic sealing substrate 2 can be set The video camera that surface state is imaged (referring to Fig. 2 (a)~Fig. 3 (e)).
In cutting module B2, equipped with cutting platform 4 and as the main shaft 9 of cutting mechanism.Main shaft 9 and 1 institute of embodiment The main shaft shown is identical.On main shaft 9, the rotating knife 11 for cutting off hermetic sealing substrate 2 is installed.It is same as embodiment 1, In main shaft 9, the processing water injection nozzle 13 equipped with injection processing water and the video camera 14 for being imaged to cutting groove.Separately Outside, also cutting module B2 can be set as the bis- main axle structures of Double tabletop-.
In addition, carry out grinding process to hermetic sealing substrate when in processing unit (plant) 44, and in other processes (device) into When row cut off operation, cutting module B2 can be omitted.In the case, processing unit (plant) 44 is functioned as grinding attachment.
(manufacturing method of electronic component)
Referring to Fig. 8 (a) to Fig. 8 (f), to the manufacturing method of the electronic component (PoP type semiconductor device) in embodiment 3 It is illustrated.As shown in Fig. 8 (a) to Fig. 8 (b), the process until production hermetic sealing substrate 2 is identical as embodiment 1.
Next, loading hermetic sealing substrate on the grinding platform 45 (referring to Fig. 7) of disconnecting device 44 as shown in Fig. 8 (c) 2.Hermetic sealing substrate 2 are ground with the abrasive grinding wheel 48 installed on main shaft 46 (referring to Fig. 7) by the roughing of disconnecting device 44. Along the processing preset lines 31 set to hermetic sealing substrate 2, the sealing resin 28 in hermetic sealing substrate 2 is ground fixed amount.? In this case, for example control stock removal, be ground to be configured at the soldered ball 27 of substrate 25 top will expose until. Stock removal is controlled by the measuring means (not shown) for being set to main shaft 46.As a result, being formed shallowly on hermetic sealing substrate 2 Opening portion 50.On main shaft 46, roughing, such as granularity small (quantity of abrasive grain is few) abrasive grinding wheel 48 is installed, because This can rapidly be ground sealing resin 28.By the way that along all processing preset lines 31 set to hermetic sealing substrate 2, (reference is schemed 4 (a)) it is ground, to form multiple shallow opening portions 50.
Next, passing through the finishing mill installed on main shaft 47 (referring to Fig. 7) of disconnecting device 44 as shown in Fig. 8 (d) Grinding wheel 49 is cut to be ground hermetic sealing substrate 2.It, will be in hermetic sealing substrate 2 along the processing preset lines 31 set to hermetic sealing substrate 2 Sealing resin 28 be ground fixed amount.In the case, stock removal is controlled, so as to be configured at the soldered ball 27 of substrate 25 Expose on top.Stock removal is controlled by the measuring means (not shown) for being set to main shaft 47.As a result, in hermetic sealing substrate 2 On, form the deep opening portion 51 for exposing the top of soldered ball 27.On main shaft 47, finishing, such as granularity are installed The abrasive grinding wheel 49 of (quantity of abrasive grain is more) greatly, therefore can precisely be ground sealing resin 28.By along to close All processing preset lines 31 (referring to Fig. 4 (a)) that substrate 2 is set are sealed to be ground, to form multiple deep opening portions 51. By process so far, grinding process is completed.
Same as embodiment 1, the stock removal of roughing and the finishing of sealing resin 28 is by being set to main shaft 46 and master The measuring means (not shown) of axis 47 is measured, to control target cut amount.In turn, pass through the video camera set on main shaft 47 (not shown), is able to confirm that whether the top of soldered ball 27 exposes.
Next, after the completion of grinding process, hermetic sealing substrate 2 is transferred load to from grinding platform 45 as shown in Fig. 8 (e) Cut off platform 4 (referring to Fig. 7).By the cutting of disconnecting device 44 rotating knife 11 installed on main shaft 9 (referring to Fig. 7), it is configured at In the processing preset lines 31 set to the opening portion 51 of hermetic sealing substrate 2.Along the processing preset lines set to hermetic sealing substrate 2 31, the remainder and substrate 25 of sealing resin 28 are cut off by rotating knife 11.As a result, being formed on hermetic sealing substrate 2 Cutting groove 52.
Hermetic sealing substrate 2 are cut off along all processing preset lines 31 (referring to Fig. 4 (a)) set to hermetic sealing substrate 2. As a result, by cutting groove 52, hermetic sealing substrate 2 is singulated as each region 32.By process so far, manufacture is constituted Multiple lower parts encapsulation 35 of PoP type semiconductor device.Though manufacturing method is different, lower part encapsulates 35 and utilizes embodiment Person manufactured by 1 manufacturing method is identical.The process of Fig. 8 (c) to Fig. 8 (e) is executed by disconnecting device 44.
Next, by the connection soldered ball 27 for being configured at lower part encapsulation 35 and being configured at top encapsulation as shown in Fig. 8 (f) 36 connection soldered ball 37 is connected, and is completed as a result, as the PoP type semiconductor device 38 of a mode of electronic component. Top encapsulation 36 is identical as top encapsulation shown in embodiment 1.
According to the present embodiment, in grinding module B1, two main shafts 46,47 of grinding mechanism are provided as.In main shaft On 46, the small abrasive grinding wheel 48 of granularity is installed in order to carry out roughing.On main shaft 47, grain is installed in order to be finished Spend big abrasive grinding wheel 49.By abrasive grinding wheel 48, can rapid stock-removal sealing resin 28, pass through abrasive grinding wheel 49, Neng Goujing Degree well finishes sealing resin 28.Therefore, hermetic sealing substrate 2 can quickly and be critically ground, so as to Improve grinding quality.
(embodiment 4)
(processing method of hermetic sealing substrate)
The roughing of hermetic sealing substrate 2 is well performed to efficiency in embodiment 4 to Fig. 9 (f) referring to Fig. 9 (a) Grinding process and the processing method of grinding process of finishing be illustrated.With embodiment 3 the difference is that, one After carrying out rough machined grinding process in item processing preset lines, the grinding process that is also and then finished.In addition to this Process it is identical as embodiment 3, and the description is omitted.
Firstly, the abrasive grinding wheel 48 for being installed on main shaft 46 (referring to Fig. 7) is configured in hermetic sealing substrate as shown in Fig. 9 (a) On the processing preset lines 31a of 2 outermost setting.Next, declining abrasive grinding wheel 48, ground along processing preset lines 31a Cut hermetic sealing substrate 2.By abrasive grinding wheel 48, the shallow (top of soldered ball 27 opening portion 50a is formed on processing preset lines 31a Opening portion before will exposing；Referring to Fig. 8 (c)).In this process, it is installed on the abrasive grinding wheel 49 of main shaft 47 (referring to Fig. 7) It is standby except hermetic sealing substrate 2.
Next, keeping main shaft 46,47 mobile as shown in Fig. 9 (b), abrasive grinding wheel 48 is configured at processing preset lines 31b On, abrasive grinding wheel 49 is configured on processing preset lines 31a.Next, declining abrasive grinding wheel 48, along processing preset lines 31b is ground hermetic sealing substrate 2, forms shallow opening portion 50b.Meanwhile decline abrasive grinding wheel 49, along processing preset lines 31a is ground hermetic sealing substrate 2.Deep opening portion 51a (opening of exposing of the top of soldered ball 27 is formed along processing preset lines 31a Oral area；Referring to Fig. 8 (d)).
Next, keeping main shaft 46,47 mobile as shown in Fig. 9 (c), abrasive grinding wheel 48 is configured at processing preset lines 31c On, abrasive grinding wheel 49 is configured on processing preset lines 31b.Next, declining abrasive grinding wheel 48, along processing preset lines 31c is ground hermetic sealing substrate 2, forms shallow opening portion 50c.Meanwhile decline abrasive grinding wheel 49, along processing preset lines 31b is ground hermetic sealing substrate 2.Deep opening portion 51b is formed along processing preset lines 31b.
As shown in Fig. 9 (d) to Fig. 9 (f), by sequentially repeating this process, thus along all processing preset lines 31a~ 31e is formed based on rough machined shallow opening portion 50a~50e, immediately form the deep opening portion 51a based on finishing~ 51e.For the processing preset lines orthogonal with processing preset lines 31a~31e, also implements same process, form multiple depths as a result, Opening portion.
According to the present embodiment, continuously implement rough machined grinding process and finishing using two main shafts 46,47 Grinding process.After processing the roughing for carrying out abrasive grinding wheel 48 in preset lines at one, abrasive grinding wheel 49 is followed by carried out Finishing.Thereby, it is possible to use the grinding mechanism of double main axle structures to carry out efficiency to carry out high-precision grinding process well.Cause This, can be improved the grinding productivity in disconnecting device 44, so as to improve grinding quality.
(embodiment 5)
(manufacturing method of electronic component)
Referring to Fig.1 0 (a) to Figure 10 (e), to the manufacturer of the electronic component (PoP type semiconductor device) in embodiment 5 Method is illustrated.
Firstly, as shown in Figure 10 (a), on substrate 53, in the multiple regions 55 surrounded by orthogonal processing preset lines 54 In, semiconductor chip 57 is installed respectively via convex block 56.Next, match around each semiconductor chip 57 multiplely It is set to multiple soldered balls 58 for connecting electrode.In the case, around semiconductor chip 57, multiple welderings are quadruply configured Ball 58.Next, being configured as multiple soldered balls 59 of external electrode in the back side of substrate 53.
Next, forming sealing in a manner of covering multiple semiconductor chips 57 and multiple soldered balls 58 as shown in Figure 10 (b) Resin 60.By process so far, hermetic sealing substrate 61 are made.
Next, for example, loading hermetic sealing substrate 61 on the cutting platform 4 (referring to Fig.1) of disconnecting device 1.Pass through work The abrasive grinding wheel 10 installed on main shaft 8 (referring to Fig.1) for the grinding mechanism of disconnecting device 1 is ground hermetic sealing substrate 61.Edge Hermetic sealing substrate 61 are ground to the processing preset lines 54 of the setting of hermetic sealing substrate 61.In the case, to hermetic sealing substrate 61 are ground, until the top for the soldered ball 58 for being configured at substrate 53 is exposed.As a result, on hermetic sealing substrate 61, shape At the opening portion 62 for exposing the top of soldered ball 58.
In present embodiment, around semiconductor chip 57, multiple soldered balls 58 are quadruply configured.Pass through abrasive grinding wheel 10 Come the sealing resin 60 being uniformly ground on the soldered ball 58 quadruply configured, expose the top of multiple soldered balls 58 all.It is as a result, Make also make the sealing resin 60 between soldered ball 58 and soldered ball 58 in the case where multiple soldered balls 58 are with narrow spacing configuration It keeps its state and remains.Therefore, it is able to suppress the case where adjacent soldered ball 58 is electrically short-circuited to each other.
Next, will be installed on the main shaft 9 (referring to Fig.1) as the cutting mechanism of disconnecting device 1 as shown in Figure 10 (d) Rotating knife 11, be configured in the processing preset lines 54 of hermetic sealing substrate 61.It is pre- along the processing set to hermetic sealing substrate 61 Alignment 54 cuts off the remainder and substrate 53 of sealing resin 60 by rotating knife 11.As a result, on hermetic sealing substrate 61 Form cutting groove 63.Hermetic sealing substrate 61 are cut off along all processing preset lines 54 set to hermetic sealing substrate 61.Pass through Process so far, manufacture constitute multiple lower parts encapsulation 64 of PoP type semiconductor device.The process of Figure 10 (c) to Figure 10 (d) It is to be executed by disconnecting device 1.
Next, by the connection soldered ball 58 for being configured at lower part encapsulation 64 and being configured at top encapsulation as shown in Figure 10 (e) 65 connection soldered ball 66 is connected, and PoP type semiconductor device 67 is completed as a result,.Top encapsulation 65 is passed through on substrate 68 Semiconductor chip 70 is installed by convex block 69, semiconductor chip 70 is covered by sealing resin 71.
According to the present embodiment, make to configure the quadruple soldered ball 58 around semiconductor chip 57 by abrasive grinding wheel 10 Top is unified to expose.Therefore, even if being also able to suppress adjacent weldering in the case where multiple soldered balls 58 are with narrow spacing configuration The case where ball 58 is electrically short-circuited to each other.Thereby, it is possible to configure multiple soldered balls 58 multiplely with thin space, so as to reduce lower part envelope Fill 64 area.
In each embodiment, to use hermetic sealing substrate be illustrated as the case where workpiece.As hermetic sealing substrate, Using ball grid array (Ball Grid Array, BGA), hermetic sealing substrate, land grid array (Land Grid Array, LGA) be Hermetic sealing substrate, wafer-level package (Chip Scale Package, CSP) hermetic sealing substrate etc..In turn, for wafer-class encapsulation (wafer level package) the present invention can also be applied.
As described above, the processing unit (plant) of the embodiment uses following structures, that is, a kind of processing unit (plant), to work Part is processed, and the processing unit (plant) includes: platform, loads workpiece；Grinding mechanism is ground workpiece；And measuring machine Structure is measured the position of a part of at least workpiece on the thickness of workpiece direction of workpiece, and grinding mechanism has grinding sand Wheel, based on the measured value determined by measuring means, to control position of the abrasive grinding wheel on thickness of workpiece direction.
According to this configuration, the position on the thickness of workpiece direction of workpiece is measured, by measuring means in the hope of going out workpiece Stock removal.By finding out the stock removal of workpiece, position of the abrasive grinding wheel on the thickness of workpiece direction of workpiece can be controlled System.Therefore, it is able to suppress the unevenness of workpiece stock removal.
In turn, in the processing unit (plant) of the embodiment, following structures are used, that is, measuring means includes at least to work The displacement sensor that the height and position of part is measured.
According to this configuration, the height and position of workpiece can be measured by displacement sensor.By the height for measuring workpiece Position can find out the stock removal of workpiece.
In turn, in the processing unit (plant) of the embodiment, following structures are used, that is, measuring means further includes to workpiece The inspection body checked.
According to this configuration, the grinding status of workpiece can be checked by inspection body.Therefore, whether it is able to confirm that workpiece Normally it is ground.
In turn, in the processing unit (plant) of the embodiment, following structures are used, that is, grinding mechanism further includes carrying out slightly 1st grinding mechanism of processing and the 2nd grinding mechanism finished.
According to this configuration, roughing is carried out to workpiece by the 1st grinding mechanism, work is carried out by the 2nd grinding mechanism The finishing of part.Therefore, it can be ground workpiece, more closely so as to improve grinding quality.
In turn, the processing unit (plant) of the embodiment uses following structures, that is, further includes the cutting machine for cutting off workpiece Structure.
According to this configuration, in processing unit (plant), the grinding of workpiece and the cutting of workpiece can be carried out using same device. Therefore, it can be improved the productivity of processing unit (plant).
In turn, in the processing unit (plant) of the embodiment, following structures are used, that is, grinding mechanism and cutting mechanism are set In grinding/cutting module.
According to this configuration, the grinding of workpiece and the cutting of workpiece can be carried out in grinding/cutting module.Due to can be It is ground and is cut off in same module, therefore the area of processing unit (plant) is inhibited to increase.
In turn, in the processing unit (plant) of the embodiment, following structures are used, that is, grinding mechanism is located at grinding module In, cutting mechanism is located in cutting module.
According to this configuration, in processing unit (plant), the grinding of workpiece is carried out using grinding module, using cutting module come into The cutting of row workpiece.Thereby, it is possible to carry out roughing and finishing in grinding module.Therefore, work can be more closely ground Part.
The processing method of the embodiment is the processing method processed to workpiece, and the workpiece has substrate, peace The multiple overshooting shape electrodes and at least covering of multiple semiconductor elements, configuration loaded on substrate around semiconductor element are more The sealing resin of a semiconductor element and multiple overshooting shape electrodes, the processing method include: setting process, are set on substrate Process preset lines；Mensuration operation, by measuring means, to the position of a part of at least workpiece on the thickness of workpiece direction of workpiece It sets and is measured；Grinding process is ground workpiece by abrasive grinding wheel；And control process, based on being measured by measuring means Measured value, position of the abrasive grinding wheel on thickness of workpiece direction is controlled.
According to the method, the position on the thickness of workpiece direction of workpiece can be measured by measuring means, so as to find out The stock removal of workpiece.It, can be to position of the abrasive grinding wheel on the thickness of workpiece direction of workpiece by finding out the stock removal of workpiece It is controlled.Therefore, it is able to suppress the unevenness of workpiece stock removal.
In turn, in the processing method of the embodiment, in control process, the position of abrasive grinding wheel is controlled, To be ground a part of sealing resin along processing preset lines by abrasive grinding wheel, to make the top of multiple overshooting shape electrodes Expose.
According to the method, a part of sealing resin is ground along processing preset lines by abrasive grinding wheel.Based on measurement The measured value of mechanism controls the position of abrasive grinding wheel to be ground sealing resin, therefore can make the upper stabilizer of overshooting shape electrode Expose on ground.
In turn, in the processing method of the embodiment, grinding process include carry out the 1st grinding process cut of corase grinding and into 2nd grinding process of row accurate grinding.
According to the method, roughing is carried out to workpiece in the 1st grinding process, workpiece is carried out in the 2nd grinding process Finishing.Therefore, it can be ground workpiece, more closely so as to improve grinding quality.
In turn, in the processing method of the embodiment, in grinding process, when carrying out the along one article of processing preset lines After 1 grinding process, when carrying out 1 grinding process along other processing preset lines, the 2nd mill is carried out along one article of processing preset lines Cut process.
According to the method, after carrying out the 1st grinding process along one article of processing preset lines, the 2nd grinding is and then carried out Process.Due to being the roughing and finishing for continuously carrying out workpiece, the grinding efficiency of workpiece can be further increased.
In turn, in the processing method of the embodiment, in mensuration operation, workpiece is measured by displacement sensor Height and position.
According to the method, the height and position of workpiece is measured by displacement sensor.By measuring the height and position of workpiece, So as to find out the stock removal of workpiece.
In turn, in the processing method of the embodiment, mensuration operation include to the height and position of the workpiece before grinding into 1st mensuration operation of row measurement and the 2nd mensuration operation that the height and position of workpiece after grinding is measured, by the The height and position of the workpiece determined respectively in 1 mensuration operation and the 2nd mensuration operation is compared, so as to find out the grinding of workpiece Amount.
According to the method, the height and position of the workpiece in the 1st mensuration operation before measurement grinding, in the 2nd mensuration operation Measure the height and position of workpiece after grinding.Pass through the height position of height and position and workpiece after grinding to the workpiece before grinding It sets and is compared, so as to find out the stock removal of workpiece.
In turn, the processing method of the embodiment includes cut off operation, the cut off operation be along processing preset lines, The remainder and substrate of sealing resin are cut off by rotating knife.
According to the method, after being ground to workpiece, the cutting of workpiece is and then carried out.Can using same device come It is continuously ground and is cut off.Therefore, it can be improved the processing of workpiece.
In turn, it in the processing method of the embodiment, in cut off operation, is ground when along a processing preset lines After cutting process, when carrying out grinding process, cut off operation is carried out along a processing preset lines along other processing preset lines.
Cut off operation is and then carried out after carrying out grinding process along a processing preset lines according to the method.Due to It is continuously to carry out the grinding and cutting of workpiece, therefore the processing of workpiece can be further increased.
In turn, in the processing method of the embodiment, multiple overshooting shape electrodes one surround semiconductor element heavyly or multiple Around part.
According to the method, make to surround the unified exposing in top of multiple overshooting shape electrodes around semiconductor element multiplely. Therefore, even if being also able to suppress adjacent overshooting shape electrode in the case where multiple overshooting shape electrodes are with narrow spacing configuration It is electrically short-circuited to each other.
The present invention is not limited to each embodiments, without departing from the scope of the subject in the invention, being capable of basis It needs to come any and is appropriately combined, changes or selects to use.

Claims (16)

1. a kind of processing unit (plant), processes workpiece, the processing unit (plant) is characterised by comprising:
Platform loads the workpiece；
Grinding mechanism is ground the workpiece；And
Measuring means surveys the position of a part of at least described workpiece on the thickness of workpiece direction of the workpiece It is fixed,
The grinding mechanism has abrasive grinding wheel,
Based on the measured value determined by the measuring means, to control the abrasive grinding wheel on the thickness of workpiece direction Position.
2. processing unit (plant) according to claim 1, which is characterized in that
The measuring means includes the displacement sensor being at least measured to the height and position of the workpiece.
3. processing unit (plant) according to claim 1 or 2, which is characterized in that
The measuring means further includes the inspection body checked the workpiece.
4. processing unit (plant) according to claim 1 or 2, which is characterized in that
The grinding mechanism further includes the 2nd grinding mechanism for carrying out rough machined 1st grinding mechanism and being finished.
5. processing unit (plant) according to claim 1 or 2, which is characterized in that
The processing unit (plant) further includes the cutting mechanism for cutting off the workpiece.
6. processing unit (plant) according to claim 5, which is characterized in that
In the processing unit (plant), the grinding mechanism and the cutting mechanism are located in grinding/cutting module.
7. processing unit (plant) according to claim 5, which is characterized in that
In the processing unit (plant), the grinding mechanism is located in grinding module,
The cutting mechanism is located in cutting module.
8. a kind of processing method, processes workpiece, multiple semiconductors that the workpiece has substrate, is installed on the substrate Element configures multiple overshooting shape electrodes around the semiconductor element and at least covers the multiple semiconductor element And the sealing resin of the multiple overshooting shape electrode, the processing method are characterised by comprising:
Process is set, on the substrate setting processing preset lines；
Mensuration operation, by measuring means, to one of at least described workpiece on the thickness of workpiece direction of the workpiece The position divided is measured；
Grinding process is ground the workpiece by abrasive grinding wheel；And
Process is controlled, based on the measured value measured by the measuring means, to the abrasive grinding wheel in the thickness of workpiece side Upward position is controlled.
9. processing method according to claim 8, which is characterized in that
In the control process, the position of the abrasive grinding wheel is controlled, to pass through the abrasive grinding wheel along described Preset lines are processed to be ground a part of the sealing resin, so that the top of the multiple overshooting shape electrode be made to expose.
10. processing method according to claim 8 or claim 9, which is characterized in that
The grinding process includes carrying out the 1st grinding process and the 2nd grinding process for carrying out accurate grinding that corase grinding is cut.
11. processing method according to claim 10, which is characterized in that
It is predetermined along other processing after carrying out 1 grinding process along one article of processing preset lines in the grinding process When line carries out 1 grinding process, the 2nd grinding process is carried out along one article of processing preset lines.
12. processing method according to claim 8 or claim 9, which is characterized in that
In the mensuration operation, the height and position of the workpiece is measured by displacement sensor.
13. processing method according to claim 8 or claim 9, which is characterized in that
The mensuration operation includes the 1st mensuration operation being measured to the height and position of the workpiece before grinding and to grinding The 2nd mensuration operation that the height and position of the workpiece afterwards is measured,
Pass through the height and position to the workpiece determined respectively in the 1st mensuration operation and the 2nd mensuration operation It is compared, so as to find out the stock removal of the workpiece.
14. processing method according to claim 9, which is characterized in that further include:
Cut off operation, along the processing preset lines, cut off by rotating knife the remainder of the sealing resin with it is described Substrate.
15. processing method according to claim 14, which is characterized in that
In the cut off operation, after carrying out the grinding process along a processing preset lines, preset lines are processed along other To carry out the cut off operation along a processing preset lines when carrying out the grinding process.
16. processing method according to claim 8 or claim 9, which is characterized in that
The multiple overshooting shape electrode one surrounds around the semiconductor element heavyly or multiple.
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