CN109411401B - Substrate supporting device and epitaxial growth equipment - Google Patents
Substrate supporting device and epitaxial growth equipment Download PDFInfo
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- CN109411401B CN109411401B CN201710713577.0A CN201710713577A CN109411401B CN 109411401 B CN109411401 B CN 109411401B CN 201710713577 A CN201710713577 A CN 201710713577A CN 109411401 B CN109411401 B CN 109411401B
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- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The invention provides a substrate supporting device and epitaxial growth equipment, wherein the substrate supporting device comprises a base ring and a base with a groove; the base ring is located in the groove and used for bearing the substrate, and an accommodating space is formed between the base ring and the base. The epitaxial growth equipment comprises the substrate supporting device. The substrate supporting device provided by the invention can well insulate heat, so that components in the substrate supporting device are not easy to age due to overheating, and the replacement frequency of the components is reduced; meanwhile, due to the reduction of the replacement frequency of the parts, the production can be carried out more smoothly, and the production efficiency is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a substrate supporting device and epitaxial growth equipment.
Background
As the technology node of semiconductor logic products gradually reaches below 10nm, the requirement of semiconductor technology on the surface flatness of silicon wafers becomes higher and higher. Among all surface flatness parameters, local flatness (SFQR) is one of the most important parameters. This is because the wafer (wafer) is divided into several units during the polishing process, each unit has a flatness, and since the subsequent photolithography process also divides the wafer into corresponding units for successive exposures, the SFQR can directly provide a flatness reference for the subsequent exposure process.
The epitaxial wafer is commonly used as a substrate in the current logic product, but the SFQR is further deteriorated when the epitaxial layer is grown, and the deterioration phenomenon is particularly obvious at the wafer edge. Specifically, the wafer is placed in a Susceptor (Susceptor) for epitaxial growth, but the wafer edge is closer to the Susceptor edge and is susceptible to heat loss due to thermal conduction, so the wafer edge temperature is lower than the wafer center temperature. Since the epitaxy is formed by arranging silicon atoms, the epitaxy is greatly affected by temperature, and during the growth of the epitaxy layer, if the temperature of the edge of the wafer is low, the mobility of the silicon atoms is reduced, so that the growth rate is not uniform, and finally the local flatness (wafer edge SFQR) of the edge of the wafer is seriously deteriorated.
One common current method for optimizing SFQR is to increase the epitaxial layer growth temperature. As shown in fig. 1 and fig. 2, as the epitaxial temperature increases, the growth rate of the epitaxial layer increases, which may reach the critical point B from the point a in fig. 2, and after reaching the critical point B, the growth rate of the epitaxial layer remains unchanged. Fig. 2 is a graph showing the relationship between the growth rate of the epitaxial layer and the temperature, and the abscissa axis in fig. 2 represents the temperature (deg.c) and the ordinate axis represents the growth rate (W/(m · K)). In addition, fig. 1 provides a schematic structural diagram of a wafer having a wafer edge 101 and a wafer center 102, wherein the epitaxial layer growth rate at the wafer edge 101 is generally indicated by point a in fig. 2. Then, as can be seen from fig. 2, by continuously increasing the epitaxial layer growth temperature, the growth rate of the epitaxial layer at the wafer edge 101 can be increased, and after reaching the critical point B, the growth rate at the wafer center 102 is not changed, while due to the effective increase of the temperature, the mobility of the silicon atoms is effectively increased at the wafer edge 101, and the growth rate is also kept consistent with that at the wafer center 102, so that better SFQR can be provided. However, increasing the epitaxial layer growth temperature leads to more degradation of quartz, graphite, teflon seals, etc. within the reaction chamber (chamber), increasing the frequency of replacement of these parts (parts).
Disclosure of Invention
The invention aims to provide a substrate supporting device and epitaxial growth equipment, which aim to solve the problem that related components are easy to age and damage due to the fact that the growth temperature of an epitaxial layer is increased in the prior art.
To achieve the above object, the present invention provides a substrate supporting apparatus including a susceptor ring and a susceptor having a groove; the base ring is located in the groove and used for bearing the substrate, and an accommodating space is formed between the base ring and the base.
Optionally, the accommodating space is a closed structure and is filled with gas.
Optionally, the gas is hydrogen.
Optionally, the susceptor ring has a first side and a second side opposite to each other, the substrate is placed on an inclined surface of the first side, and the accommodating space is formed between the second side and the susceptor.
Optionally, a concave structure is formed on the base ring and/or the base, and the concave structure forms the accommodating space.
Optionally, the susceptor ring includes a first segment and a second segment connected together, the first segment and the second segment being angled to collectively form the recessed structure.
Optionally, a groove is formed at a junction between a groove bottom of the groove and a groove wall of the groove, and the groove forms the concave structure.
Optionally, the groove extends radially outwardly of the recess.
Optionally, the material of the susceptor ring and/or the pedestal is selected from one of graphite and carbon fiber.
Optionally, the graphite is plated with silicon carbide.
Optionally, the thickness of the silicon carbide is between 10um and 200 um.
Optionally, one of the concave block and the convex block is arranged on the base ring, the other of the concave block and the convex block is arranged on the base, and the convex block is used for being matched with the concave block.
Furthermore, the invention also provides epitaxial growth equipment which comprises the substrate supporting device.
In summary, in the substrate supporting device and the epitaxial growth apparatus provided by the present invention, the substrate supporting device includes the susceptor ring and the base having the groove, the susceptor ring is located in the groove of the base and is used for carrying the substrate, and the accommodating space is formed between the susceptor ring and the base to isolate the heat transfer between the edge of the substrate and the base through the accommodating space, so as to ensure that the temperature of the edge of the substrate is not too low due to heat conduction loss, and further ensure that the growth rate of the epitaxial layer at the edge of the substrate can meet the requirement, and aging damage of related components due to extra temperature rise is avoided, so that the frequency of replacing related components can be reduced, the production can be performed more smoothly, and the production efficiency is improved.
In a preferred embodiment of the present invention, the accommodating space is a closed structure and is filled with a gas, especially hydrogen, and the thermal conductivity of the gas is much lower than that of a solid, so that the thermal conduction loss at the edge of the substrate can be further reduced.
Drawings
FIG. 1 is a schematic diagram of a conventional wafer structure;
FIG. 2 is a graph of the growth rate of an epitaxial layer in accordance with the prior art with respect to temperature;
FIG. 3 is a schematic view of a substrate supporting apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic longitudinal cross-sectional view of the substrate support apparatus shown in FIG. 3;
FIG. 5 is a schematic structural diagram of a substrate supporting apparatus according to a second embodiment of the present invention;
FIG. 6 is a schematic longitudinal cross-sectional view of the substrate support apparatus shown in FIG. 5;
FIG. 7 is an enlarged view of a portion of the substrate support apparatus shown in FIG. 5 with bumps;
FIG. 8 is a schematic view of the substrate supporting apparatus shown in FIG. 5 with a concave block.
The reference numerals are explained below:
101-wafer edge; 102-wafer center;
20. 30-a base; 21. 31-a base ring; 22. 32-a containing space; 41-a bump; 42-concave block.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The substrate in the following description includes, but is not limited to, a silicon wafer.
Example one
Fig. 3 is a schematic structural diagram of a substrate supporting apparatus according to an embodiment of the invention, and fig. 4 is a schematic longitudinal sectional diagram of the substrate supporting apparatus shown in fig. 3. As shown in fig. 3 and 4, the substrate supporting apparatus includes a susceptor ring 21 and a susceptor 20 having a groove; the susceptor ring 21 is located in the groove of the base 20 and is used for bearing a substrate, an accommodating space 22 is formed between the susceptor ring 21 and the base 20, and the arrangement of the accommodating space 22 can reduce the contact surface between the susceptor ring 21 and the base 20, thereby reducing the contact surface of heat conduction. Specifically, when the substrate is placed on the susceptor ring 21, since the area where the susceptor ring 21 is in direct contact with the susceptor 20 is reduced, the chance that the heat of the substrate itself is conducted to the susceptor 20 via the susceptor ring 21 is reduced.
For the epitaxial growth process, when the substrate is heated to make the edge of the substrate reach the temperature requirement of epitaxial growth, the accommodating space 22 is formed between a part of the region of the susceptor ring 21 and the pedestal 20, so that the contact area between the susceptor ring 21 and the pedestal 20 is reduced, and thus the heat of the substrate is not easily and directly transferred to the pedestal 20, and further, the related components located in the cavity of the pedestal 20, such as quartz, graphite, teflon sealing elements and the like, can be well protected, so that the aging caused by overheating is not easily caused, the replacement frequency of the components is reduced, and meanwhile, due to the reduction of the replacement frequency of the components, the production can be performed more smoothly, and the production efficiency is improved.
In this embodiment, the susceptor ring 21 has a first side and a second side opposite to each other, the substrate is placed on the first side, and a receiving space 22 is formed between the second side and the base 20. Optionally, the base ring 21 has a concave space (herein, the concave space is also defined as a concave structure), and the concave space 21 directly forms the accommodating space 22.
Optionally, the susceptor ring 21 includes a first section 211 and a second section 212 formed by bending the first section 211, such that the first section 211 and the second section 212 together form an inner concave space. As shown in fig. 3 and 4, the first section 211 can abut against the side wall of the groove of the base 20, and the second section 212 contacts with the bottom of the groove of the base 20.
Further, the first segment 211 has a bevel (not labeled) for carrying the substrate, and the substrate is placed on the bevel to reduce the contact area between the substrate and the susceptor ring 21, thereby reducing the heat transfer from the substrate to the susceptor ring 21.
Furthermore, the accommodating space 22 is a closed structure such as a ring, and is filled with gas, preferably hydrogen, because the thermal conductivity of hydrogen is smaller than that of other gases, so that a good heat insulation effect can be achieved. The characteristic that the thermal conductivity of the gas is far lower than that of the solid is utilized, so that the heat dissipation caused by the heat conduction at the edge of the substrate can be further reduced. In this example, the thermal conductivity of the hydrogen gas was 0.163W/(m · K).
In this embodiment, the material of the susceptor ring 21 and the pedestal 30 may be selected from one of carbon fiber and graphite, and it is more preferable that the graphite is coated with a layer of silicon carbide. The thickness of the layer of silicon carbide is preferably between 10um and 200 um. Since the thermal conductivity of silicon carbide is low compared to that of graphite, for example, the thermal conductivity of silicon carbide is 84W/(m · K), and the thermal conductivity of graphite is 129W/(m · K), the susceptor ring 21 and the susceptor 20 made of silicon carbide and graphite are not easy to conduct heat, and have a good heat insulation effect.
Example two
The substrate supporting apparatus provided in this embodiment is substantially the same as the first embodiment, and only different points will be described below.
Fig. 5 is a schematic structural diagram of a substrate supporting apparatus according to a second embodiment of the present invention, and fig. 6 is a schematic longitudinal sectional view of the substrate supporting apparatus shown in fig. 5. As shown in fig. 5 and 6, the substrate supporting apparatus includes a susceptor ring 31 and a base 30 having a groove, and a receiving space 32 is formed between one side of the susceptor ring 31 and the base 30.
In this embodiment, a groove is formed at the boundary between the bottom of the groove of the base 30 and the wall of the groove, and the groove is annular and forms an inward concave space, and the inward concave space can directly form an accommodating space 32. Preferably, the base ring 31 is also formed with a concave space (see the first embodiment). When the base ring 31 and the base 30 are both provided with a concave space, the two concave spaces together form a receiving space 32. Preferably, the grooves extend radially outward of the base 30.
Further, fig. 7 is a partially enlarged schematic view of the substrate supporting apparatus shown in fig. 5 and provided with a bump, fig. 8 is a schematic view of the substrate supporting apparatus shown in fig. 5 and provided with a concave block, as shown in fig. 7 and 8, a concave block 41 (e.g., a hole) is provided in the groove of the base 30 along the circumferential direction of the base 30, and a corresponding bump 42 (e.g., a positioning column) matched with the concave block 41 is provided on the base ring 31. The susceptor ring 31 is prevented from sliding within the groove of the susceptor 30 by the mating of the projections with the recesses. The number of the concave blocks is preferably 3 to 36. Of course, the base 30 may also be provided with a protrusion, and correspondingly, the base ring 31 may be provided with a concave block to achieve the same effect, that is, only one of the base 30 and the base ring 31 is provided with a protrusion, and the other of the base 30 and the base ring 31 is provided with a concave block matched with the protrusion.
It should be noted that the positioning structure of the matching bump and the matching recess in the second embodiment is also applicable to the substrate supporting apparatus in the first embodiment.
EXAMPLE III
An embodiment of the present invention provides an epitaxial growth apparatus, which includes the substrate supporting device of the embodiment, so that the substrate supporting device of the epitaxial growth apparatus of the embodiment provides beneficial effects, and please refer to the above embodiments accordingly. The epitaxial growth equipment is mainly chemical vapor phase epitaxial growth equipment.
The epitaxial growth equipment is provided with a reaction chamber, the substrate supporting device is arranged in the reaction chamber, and related components such as a quartz piece, a graphite piece, a Teflon sealing piece and the like are further arranged in the reaction chamber.
Finally, the preferred embodiments of the present invention are described above, but are not limited to the scope of the disclosure of the above embodiments, for example, and are not limited to forming the inner recesses in the susceptor ring by bending, and the inner recesses may be formed in one or both of the susceptor and the susceptor ring.
In summary, in the substrate supporting device and the epitaxial growth apparatus provided by the present invention, the substrate supporting device includes the susceptor ring and the base having the groove, the susceptor ring is located in the groove of the base and is used for carrying the substrate, and the accommodating space is formed between the susceptor ring and the base to isolate the heat transfer between the edge of the substrate and the base through the accommodating space, so as to ensure that the temperature of the edge of the substrate is not too low due to heat conduction loss, and further ensure that the growth rate of the epitaxial layer at the edge of the substrate can meet the requirement, and aging damage of related components due to extra temperature rise is avoided, so that the frequency of replacing related components can be reduced, the production can be performed more smoothly, and the production efficiency is improved.
In a preferred embodiment of the present invention, the accommodating space is a closed structure and is filled with a gas, especially hydrogen, and the thermal conductivity of the gas is much lower than that of a solid, so that the thermal conduction loss at the edge of the substrate can be further reduced.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
1. A substrate support apparatus comprising a susceptor ring and a susceptor having a recess; the base ring is located in the groove and used for bearing the substrate, an accommodating space is formed between the base ring and the base, the accommodating space is of a closed structure, and gas is filled in the accommodating space.
2. The substrate support apparatus of claim 1, wherein the gas is hydrogen.
3. The substrate support apparatus of claim 1, wherein the susceptor ring has opposing first and second sides, the substrate rests on a sloped surface of the first side, and the receiving space is formed between the second side and the susceptor.
4. The substrate support apparatus of claim 1, wherein the susceptor ring and/or the pedestal have a recessed structure formed thereon, the recessed structure forming the receiving space.
5. The substrate support apparatus of claim 4, wherein the susceptor ring comprises a first segment and a second segment connected, the first segment and the second segment angled to collectively form the concave structure.
6. The substrate support apparatus of claim 4, wherein a groove is formed at an intersection of a bottom of the groove and a wall of the groove, the groove forming the inner concave structure.
7. The substrate support apparatus of claim 6, wherein the groove extends radially outward of the recess.
8. The substrate support apparatus of claim 1, wherein the susceptor ring and/or the pedestal is made of a material selected from one of graphite and carbon fiber.
9. The substrate support apparatus of claim 8, wherein the graphite is coated with silicon carbide.
10. The substrate support apparatus of claim 9, wherein the silicon carbide has a thickness between 10um and 200 um.
11. The substrate support apparatus of claim 1, wherein the susceptor ring is provided with one of a dimple and a projection, and the susceptor ring is provided with the other of a dimple and a projection, the projection being adapted to mate with the dimple.
12. An epitaxial growth apparatus comprising a substrate support device according to any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710713577.0A CN109411401B (en) | 2017-08-18 | 2017-08-18 | Substrate supporting device and epitaxial growth equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710713577.0A CN109411401B (en) | 2017-08-18 | 2017-08-18 | Substrate supporting device and epitaxial growth equipment |
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| Publication Number | Publication Date |
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| CN109411401A CN109411401A (en) | 2019-03-01 |
| CN109411401B true CN109411401B (en) | 2020-12-25 |
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| CN201710713577.0A Active CN109411401B (en) | 2017-08-18 | 2017-08-18 | Substrate supporting device and epitaxial growth equipment |
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| CN111471976A (en) * | 2020-05-21 | 2020-07-31 | 中国科学院半导体研究所 | Substrate holder |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5885404A (en) * | 1996-11-05 | 1999-03-23 | Samsung Electronics Co., Ltd. | Pedestal with self retaining sealing ring for semiconductor device etching system |
| CN101118842A (en) * | 2006-07-31 | 2008-02-06 | 日东电工株式会社 | Method for joining adhesive tape to semiconductor wafer, method for separating protective tape from semiconductor wafer, and apparatuses using the methods |
| CN103074607A (en) * | 2012-02-22 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Graphite plate and reaction chamber with graphite plate |
| CN103255393A (en) * | 2012-02-16 | 2013-08-21 | Lg伊诺特有限公司 | Semiconductor manufacturing apparatus |
-
2017
- 2017-08-18 CN CN201710713577.0A patent/CN109411401B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5885404A (en) * | 1996-11-05 | 1999-03-23 | Samsung Electronics Co., Ltd. | Pedestal with self retaining sealing ring for semiconductor device etching system |
| CN101118842A (en) * | 2006-07-31 | 2008-02-06 | 日东电工株式会社 | Method for joining adhesive tape to semiconductor wafer, method for separating protective tape from semiconductor wafer, and apparatuses using the methods |
| CN103255393A (en) * | 2012-02-16 | 2013-08-21 | Lg伊诺特有限公司 | Semiconductor manufacturing apparatus |
| CN103074607A (en) * | 2012-02-22 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Graphite plate and reaction chamber with graphite plate |
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