CN111471976A

CN111471976A - Substrate holder

Info

Publication number: CN111471976A
Application number: CN202010438628.5A
Authority: CN
Inventors: 金鹏; 王占国
Original assignee: Institute of Semiconductors of CAS
Current assignee: Institute of Semiconductors of CAS
Priority date: 2020-05-21
Filing date: 2020-05-21
Publication date: 2020-07-31

Abstract

The present disclosure provides a substrate holder for supporting a substrate on which material growth is performed, wherein the substrate holder includes: a base and a support device; the base is of an annular structure; the first end of the supporting device is integrally connected with the base; and the second end of the supporting device is of an arc-shaped surface structure and is tangent to the lower surface of the substrate. According to the method, the contact surface between the supporting device and the substrate is reduced, the heat conduction between the supporting device and the substrate is reduced, the high-uniformity temperature distribution of the surface of the substrate is realized, and the material growth quality is improved.

Description

Substrate holder

Technical Field

The present disclosure relates to the field of material growth, and more particularly, to a substrate holder.

Background

In the thin film growth of a material such as a semiconductor, a metal, a topological insulator, a magnetic material, or an organic compound semiconductor, a material growth apparatus such as molecular beam epitaxy, chemical vapor deposition, thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, atomic layer deposition, or pulsed laser deposition is generally used.

These devices are typically grown on a specific substrate during material growth, and in order to facilitate transfer and rotation during growth, the substrate is not directly fixed to the substrate heater, but is typically mounted or placed on a substrate holder, which in turn is mounted on the substrate heater to heat the substrate during growth. The structural form of the substrate holder is important for material growth and has a great influence on the temperature distribution uniformity of the substrate surface. For a substrate with a large size and a substrate mounting mode with a growth surface facing downwards, the conventional substrate holder generally adopts an edge bearing type structure mode, but the contact area between the substrate holder and the lower surface of the substrate is large, and large heat conduction exists between the substrate holder and the substrate, so that the temperature distribution along the radial direction of the substrate is uneven, and the growth quality of a material is influenced.

Disclosure of Invention

Technical problem to be solved

The present disclosure provides a substrate holder to at least partially solve the technical problems set forth above.

(II) technical scheme

According to an aspect of the present disclosure, there is provided a substrate holder for supporting a substrate on which material growth is performed, wherein the substrate holder includes:

the base is of an annular structure;

the first end of the supporting device is integrally connected with the base; the second end of the supporting device is of an arc-shaped surface structure and is tangent to the lower surface of the substrate, so that the contact surface between the supporting device and the substrate is reduced, and the heat conduction between the supporting device and the substrate is reduced.

In some embodiments of the present disclosure, the support device is a ring-shaped structure; the cross section of the supporting device is circular and/or semicircular.

In some embodiments of the present disclosure, the support device comprises:

a plurality of support blocks evenly distributed on the base around a central axis; the supporting block is spherical and/or hemispherical.

In some embodiments of the present disclosure, further comprising:

and the limiting blocks are arranged on the inner wall surface of the base and uniformly distributed around the side wall of the substrate.

In some embodiments of the present disclosure, the end of the stopper contacting the sidewall of the substrate is a cambered surface structure.

In some embodiments of the present disclosure, the number of support blocks is 3-10.

In some embodiments of the present disclosure, the number of the limiting blocks is 3 to 10.

In some embodiments of the present disclosure, the base comprises:

a first hole having a diameter larger than a diameter of the substrate;

a second hole having a diameter smaller than a diameter of the substrate; the intersection of the second hole and the first hole forms a step plane, and the first end of the supporting device is integrally connected with the step plane.

In some embodiments of the present disclosure, the material of the susceptor and the supporting device is one or more of molybdenum, tantalum, and titanium.

(III) advantageous effects

According to the technical scheme, the substrate holder disclosed by the invention has at least one or part of the following beneficial effects:

(1) the end part of the supporting device is of an arc-shaped surface structure, so that the substrate is borne by a small contact area, and the heat conduction between the substrate and the substrate support is effectively reduced.

(2) The limiting block is used for limiting the space of the substrate, is less in contact with the side wall of the substrate, and can reduce the heat conduction between the substrate and the substrate support.

(3) The first hole of the susceptor of the present disclosure facilitates the loading of the substrate while serving as a heat radiation path for the substrate heater to heat the substrate.

(4) The second hole of the susceptor of the present disclosure allows atoms, molecules, etc. of the growth material to grow on the lower surface of the substrate.

Drawings

Fig. 1a is a schematic front view of a substrate holder according to a first embodiment of the disclosure.

Fig. 1b is a schematic top view of a substrate holder according to a first embodiment of the disclosure.

FIG. 1c is a schematic view of a portion 2-I of FIG. 1 a.

FIG. 1d is a schematic view of a partial structure 2-II in FIG. 1 b.

Fig. 2a is a schematic front view of a substrate holder according to a second embodiment of the disclosure.

Fig. 2b is a schematic top view of a substrate holder according to a second embodiment of the disclosure.

FIG. 2c is a schematic view of a portion of 3-I in FIG. 2 a.

FIG. 2d is a schematic view of a portion of 3-II in FIG. 2 b.

[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure

21, 31-a base;

21a, 31 a-second hole;

21b, 31 b-a first hole;

21c, 31 c-step plane;

211-a support means;

311-a support block;

212, 312-limit block;

22, 32-substrate.

Detailed Description

For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.

Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.

In a first exemplary embodiment of the present disclosure, a substrate holder is provided. Fig. 1a is a schematic front view of a substrate holder according to a first embodiment of the disclosure. Fig. 1b is a schematic top view of a substrate holder according to a first embodiment of the disclosure. FIG. 1c is a schematic view of a portion 2-I of FIG. 1 a. FIG. 1d is a schematic view of a partial structure 2-II in FIG. 1 b. As shown in fig. 1a to 1d, the substrate holder of the present embodiment is used for supporting a substrate, and material growth such as a semiconductor, a metal, a topological insulator, a magnetic material, an organic compound semiconductor material, and the like is performed on the substrate 22. The substrate holder includes: a base 21 and a support device 211. The base 21 is a ring structure, and the base 21 includes a first hole 21b, a second hole 21a and a step plane 21 c. The diameter of the second hole 21a (lower circular hole) is smaller than that of the substrate 22, so that atoms, molecules, etc. (not shown in the drawing) of the growth material grow on the lower surface of the substrate 22 through the second hole 21 a. The first hole 21b (upper counterbore) has a diameter larger than that of the substrate 22, and facilitates loading of the substrate 22 from above while also serving as a heat radiation path for a substrate heater (not shown) placed above the substrate 22 to heat the substrate 22. A stepped plane 21c is formed where the second hole 21a meets the first hole 21 b. The first end of the supporting device 211 is integrally connected to the step plane 21c, and the second end of the supporting device 211 is a cambered surface structure and is tangent to the lower surface of the substrate 22. In this embodiment, the supporting device 211 is a ring structure with a semicircular section formed on the step plane 21c, and the inner diameter of the ring is the same as the diameter of the second hole 21 a. The supporting device 211 is configured to support the substrate 22 with a smaller contact area, which can effectively reduce the thermal conduction between the substrate 22 and the substrate holder. It will be understood by those skilled in the art that the design of the second end of the supporting device 211, which is tangent to the lower surface of the substrate 22, such as a circular ring structure with a circular cross section, may be suitable, and the structure of the second end of the supporting device 211 is not limited to the semicircular ring structure exemplified in the present embodiment. Materials for the substrate and support means are molybdenum, tantalum, titanium, etc. The stoppers 212 are provided at equal intervals on the inner wall surface of the first hole 21 b. The number of stop blocks 212 is typically 3-10. The limiting block 212 in this embodiment is a semi-cylindrical protrusion. Specifically, the contact end of the limiting block 212 and the side wall of the substrate is a semi-spherical structure, and the structural design meets the requirement of space limitation on the substrate 22, and meanwhile, the contact with the side wall of the substrate is small, so that the heat conduction between the substrate 22 and the substrate holder is reduced. It will be understood by those skilled in the art that the structure of the stopper 212 is not limited to the semi-cylindrical protrusion structure illustrated in the present embodiment, and the design of the end portion of the stopper 212 contacting the sidewall of the substrate 22 can be applied to an end portion having a cambered surface structure, such as a spherical shape, which is not illustrated here.

Before the material is grown, the substrate 22 is placed on the upper portion of the supporting means 211 of the first hole 21b of the susceptor 21, and the lower surface of the substrate 22 is tangent to the upper arc of the supporting means 211. When the material grows, a substrate heater (not shown) placed above the substrate 22 radiates heat to the upper surface of the substrate 22 through the first hole 21b, while atoms, molecules, etc. (not shown) of the material to be grown grow on the lower surface of the substrate 22 through the second hole 21 a.

As can be seen from the above description, the substrate holder for material growth provided by the present disclosure may be used in material growth equipment such as molecular beam epitaxy, chemical vapor deposition, thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, atomic layer deposition, pulsed laser deposition, etc., and is beneficial to reducing heat conduction between the substrate 22 and the substrate holder 21 and achieving a high-uniformity temperature distribution on the surface of the substrate 22.

In a second exemplary embodiment of the present disclosure, a substrate holder is provided. Fig. 2a is a schematic front view of a substrate holder according to a second embodiment of the disclosure. Fig. 2b is a schematic top view of a substrate holder according to a second embodiment of the disclosure. FIG. 2c is a schematic view of a portion of 3-I in FIG. 2 a. FIG. 2d is a schematic view of a portion of 3-II in FIG. 2 b. As shown in fig. 2a to 2d, the substrate holder of the present embodiment is used for supporting a substrate 32, and material growth such as a semiconductor, a metal, a topological insulator, a magnetic material, an organic compound semiconductor material, or the like is performed on the substrate 32. The substrate holder includes: a base 31 and a support device. The base 31 has a ring-shaped structure, and the base 31 includes a first hole 31b, a second hole 31a, and a step plane 31 c. The diameter of the second hole 31a (lower circular hole) is smaller than the diameter of the substrate 32, so that atoms, molecules, etc. (not shown in the drawing) of the growth material grow on the lower surface of the substrate 32 through the second hole 31 a. The first hole 31b (upper counterbore) has a diameter larger than that of the substrate 32, and facilitates loading of the substrate 32 from above while also serving as a heat radiation path for a substrate heater (not shown) placed above the substrate 32 to heat the substrate 32. A stepped plane 31c is formed where the second hole 31a meets the first hole 31 b. The plurality of stoppers 312 are equidistantly disposed on the inner wall surface of the first hole 31b, and the number of stoppers 312 is generally 3 to 10. In this embodiment, the limiting block 312 is a semi-cylindrical protrusion structure. Specifically, the contact end of the limiting block 312 and the side wall of the substrate is a semi-spherical structure, and the structural design meets the requirement of space limitation on the substrate 32, and meanwhile, the contact with the side surface of the substrate is small, so that the heat conduction between the substrate 32 and the substrate holder is reduced. It can be understood by those skilled in the art that the structure of the stopper 312 is not limited to the semi-cylindrical protrusion structure illustrated in the present embodiment, and the design of the end portion of the stopper 312 contacting the sidewall of the substrate 32 can be applied to the end portion having a cambered surface structure, such as a spherical shape, which is not illustrated here. The substrate holder of the present embodiment is different from the substrate holder of the first embodiment in that: the supporting device comprises: a plurality of support blocks 311, evenly distributed around the central axis on the step plane, the number of support blocks 311 being typically 3-10. In this embodiment, the supporting blocks 311 have a hemispherical structure, and the supporting blocks 311 are uniformly distributed around the central axis on the step plane 31c of the base 31. In the embodiment, the supporting device has a smaller contact area for supporting the substrate 32, so that the heat conduction between the substrate 32 and the substrate holder can be effectively reduced. It will be understood by those skilled in the art that the structure of the second end of the supporting block 311 is not limited to the hemispherical structure illustrated in the present embodiment, and it can be satisfied that the second end of the supporting block 311 is an arc structure, and the end of the second end of the supporting block 311 tangent to the lower surface of the substrate 32 is designed to be an arc structure such as a sphere, which is not illustrated here.

So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.

From the above description, a person skilled in the art should clearly recognize that the substrate holder of the present disclosure is.

In summary, the present disclosure provides a substrate holder for material growth, which effectively reduces the thermal conduction between the substrate and the substrate holder, can realize the high-uniformity temperature distribution on the surface of the substrate, and can be widely applied to the field of material growth equipment.

It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.

And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.

Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.

The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims

1. A substrate holder for supporting a substrate on which material growth is to be performed, wherein the substrate holder comprises:

the base is of an annular structure;

2. The substrate holder of claim 1, wherein the support device is a ring-shaped structure; the cross section of the supporting device is circular and/or semicircular.

3. The substrate holder of claim 1, wherein the support device comprises:

4. The substrate holder according to claim 2 or 3, further comprising:

5. The substrate holder according to claim 4, wherein the ends of the limiting blocks, which are in contact with the side walls of the substrate, are in a cambered surface structure.

6. The substrate holder of claim 3, wherein the number of support blocks is 3-10.

7. The substrate holder according to claim 4, wherein the number of the stoppers is 3 to 10.

8. The substrate holder according to any one of claims 1 to 7, wherein the base comprises:

a first hole having a diameter larger than a diameter of the substrate;

9. The substrate holder according to any one of claims 1 to 7, wherein the material of the susceptor and the support means is one or more of molybdenum, tantalum, titanium.