CN109390492B - Display device and preparation method thereof - Google Patents
Display device and preparation method thereof Download PDFInfo
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- CN109390492B CN109390492B CN201710683611.4A CN201710683611A CN109390492B CN 109390492 B CN109390492 B CN 109390492B CN 201710683611 A CN201710683611 A CN 201710683611A CN 109390492 B CN109390492 B CN 109390492B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention belongs to the field of display devices and provides display equipment and a preparation method thereof. The invention provides a display device which comprises a substrate, a light-emitting device, a packaging structure and a composite material layer. An encapsulation structure is formed on the substrate and the light emitting device to cover the light emitting device; the composite material layer is disposed between the light emitting device and the encapsulation structure. The combined material layer is the combined material layer of carbon nano-material and metal nanometer hexagonal structure material, because carbon nano-material has superior light transmissivity, metal nanoparticle has superior heat conductivility, both combine to have superior light transmissivity promptly after forming combined material, also can effectively absorb the device heat dissipation's heat simultaneously to the heat that makes the device in time gives off, guarantees the continuation and stability of its heat conductivity, is favorable to improving the life-span of device.
Description
Technical Field
The invention belongs to the field of display devices, and particularly relates to a display device and a preparation method thereof.
Background
Quantum Dots (QDs) have the characteristics of tunable size, narrow light-emitting line width, high photoluminescence efficiency, thermal stability and the like, so that a Quantum dot light-emitting diode (Q L ED) using the Quantum dots as a light-emitting layer is a potential next-generation display and solid-state illumination light source.
However, because of the poor waterproof performance and oxygen performance of the existing Q L ED device, water and oxygen in the air can easily permeate into the Q L ED device to affect the performance of the device, therefore, the packaging technology of Q L ED becomes a key process for improving the waterproof performance and oxygen performance of the Q L ED, but the heat dissipated by the Q L ED can not be dissipated timely due to the closed environment in the packaging process, so that the temperature of the whole display is increased, and the efficiency and the service life of the whole display are affected.
Therefore, the existing light-emitting device has the problems that the heat of the device cannot be dissipated in time due to the sealed environment of the package, so that the device has low light-emitting efficiency and short service life.
Disclosure of Invention
The invention aims to provide display equipment and a preparation method thereof, and aims to solve the problems that the prior light-emitting device cannot timely dissipate the heat of the device due to the sealed environment of packaging, so that the device has low luminous efficiency and short service life.
The present invention provides a display device including:
a substrate;
a light emitting device disposed on the substrate;
an encapsulation structure disposed on the substrate and the light emitting device to cover the light emitting device;
the composite material layer is arranged between the light-emitting device and the packaging structure and is made of carbon nano materials and metal nano hexagonal structure materials.
The invention also provides a preparation method of the display device, which comprises the following steps:
providing a substrate;
forming a light emitting device on the substrate;
arranging a composite material layer on the packaging structure;
arranging a packaging structure provided with a composite material layer on the substrate and the light-emitting device to cover the light-emitting device, wherein the composite material layer is arranged between the light-emitting device and the packaging structure, and the composite material layer is a composite material layer of a carbon nano material and a metal nano hexagonal structure material.
The present invention also provides another method for manufacturing a display device, the method comprising the steps of:
providing a substrate;
forming a light emitting device on the substrate;
forming a composite material layer on the substrate and the light emitting device to cover the light emitting device;
arranging an encapsulation structure on the substrate and the light-emitting device covered by the composite material layer to cover the light-emitting device covered by the composite material layer; wherein the composite material layer is a composite material layer of a carbon nano material and a metal nano hexagonal structure material.
The invention provides a display device which comprises a substrate, a light-emitting device, a packaging structure and a composite material layer. An encapsulation structure is formed on the substrate and the light emitting device to cover the light emitting device; the composite material layer is disposed between the light emitting device and the encapsulation structure. The combined material layer is the combined material layer of carbon nano-material and metal nanometer hexagonal structure material, because carbon nano-material has superior light transmissivity, metal nanoparticle has superior heat conductivility, both combine to have superior light transmissivity promptly after forming combined material, also can effectively absorb the device heat dissipation's heat simultaneously to the heat that makes the device in time gives off, guarantees the continuation and stability of its heat conductivity, is favorable to improving the life-span of device.
Drawings
Fig. 1 is a schematic structural diagram of a display device provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a display device according to another embodiment of the present invention;
fig. 3 is a schematic structural view of a light emitting device provided by an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a display device corresponding to fig. 1 provided in an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a display device corresponding to fig. 2 according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1 and fig. 2, a schematic structural diagram of a display device according to an embodiment of the present invention is shown. The display device comprises a substrate 1, a light emitting device 2, a composite layer (in fig. 1, the composite layer corresponds to 31; in fig. 2, the composite layer corresponds to 32), and an encapsulation structure 4. The package structure 3 is formed on the substrate 1 and the light emitting device 2 to cover the light emitting device 2; a composite layer is arranged between the light emitting device 2 and the encapsulation structure 4. The composite material layer is a composite layer of carbon nano material and metal nano hexagonal structure material. Wherein the composite layer being disposed between the light emitting device 2 and the encapsulation structure 4 comprises at least the composite layer 31 being disposed between the upper surface of the light emitting device 2 and the encapsulation structure 4 (as shown in fig. 1). In one embodiment, the composite material layer 32 may also be disposed between the upper surface of the light emitting device 2 and the encapsulation structure 4 while covering the light emitting device 2 (as shown in fig. 2). Here, the bottom surface of the light emitting device 2 is connected to the substrate 1, and the surface opposite to the bottom surface is the upper surface of the light emitting device 2.
In the embodiment of the present invention, the substrate 1 is not limited to be used, and a rigid substrate or a flexible substrate may be used. Wherein the rigid substrate includes, but is not limited to, one or more of glass, metal foil; the flexible substrate includes, but is not limited to, one or more of polyethylene terephthalate (PET), polyethylene terephthalate (PEN), Polyetheretherketone (PEEK), Polystyrene (PS), Polyethersulfone (PES), Polycarbonate (PC), Polyarylate (PAT), Polyarylate (PAR), Polyimide (PI), polyvinyl chloride (PV), Polyethylene (PE), polyvinylpyrrolidone (PVP), textile fibers.
In the embodiment of the present invention, the light emitting device 2 has a conventional structure (see fig. 3), and includes a bottom electrode 201 disposed on the substrate 1, and a first functional layer 202, a light emitting layer 203, a second functional layer 204, and a top electrode 205 sequentially disposed on the bottom electrode 201. The light emitting device 2 is not limited to the device structure, and may be a device of a positive type structure or a device of an inverted type structure. When the structure of the light emitting device 2 is a positive structure, the bottom electrode 201 is an anode, the first functional layer 202 is a hole functional layer, the second functional layer 204 is an electron functional layer, and the top electrode 205 is a cathode; when the structure of the light emitting device 2 is an inversion structure, the bottom electrode 201 is a cathode, the first functional layer 202 is an electron functional layer, the second functional layer 204 is a hole functional layer, and the top electrode 205 is an anode.
In one embodiment, the structure of the light-emitting device 2 is used as a positive structure to explain the device, and it should be noted that the description of the anode, the hole function layer, the electron function layer, and the cathode in this embodiment is not limited to the description of the positive structure, and the description of the anode, the hole function layer, the electron function layer, and the cathode in the inversion structure is also applicable.
Further, the bottom electrode 201 is an anode deposited on the substrate 1, the material of the bottom electrode 201 is not limited, and may be selected from doped metal oxides, including but not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), and aluminum-doped magnesium oxide (AMO), or may be selected from a composite electrode sandwiching metal between doped or undoped transparent metal oxides, including but not limited to, AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO/Al/ZnO, and doped or undoped transparent metal oxides2/Ag/TiO2、TiO2/Al/TiO2、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO2、TiO2/Al/TiO2One or more of (a).
Further, the first functional layer 202 is a hole functional layer for injecting and transporting holes, including but not limited to at least one hole transport layer disposed on the bottom electrode. In this embodiment, the thickness of the hole transport layer has a large influence on the conductivity of the film layer and the injection efficiency of holes, and if the thickness is too thin, the conductivity is weak, and the hole and the electron are not balanced, and the light emitting region may be in the electron transport layer but not in the light emitting layer; too thick is not conducive to implantation. In order to make the film layer have a strong conductivity and a high hole injection efficiency, the hole transport layer preferably has a thickness of 0nm to 100nm, more preferably 40nm to 50 nm. Specifically, the hole transport layer may be selected from an organic material having a hole transport ability and/or an inorganic material having a hole transport ability. WhereinOrganic materials having hole transport capability include, but are not limited to, poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Polyvinylcarbazole (PVK), poly (N, N ' bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine) (poly-TPD), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4' -bis (9-Carbazole) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1 ' -biphenyl-4, one or more of 4' -diamine (TPD), N ' -diphenyl-N, N ' - (1-naphthyl) -1,1 ' -biphenyl-4, 4' -diamine (NPB); inorganic materials with hole transport capability include, but are not limited to, doped graphene, undoped graphene, C60, doped or undoped MoO3、VO2、WO3、CrO3、CuO、MoS2、MoSe2、WS2、WSe2And CuS.
Further, the light emitting layer 203 is disposed on the first functional layer 202, and preferably, the film thickness of the light emitting layer 203 is 10nm to 100 nm. Specifically, the material of the light-emitting layer 203 includes at least one of an inorganic semiconductor nanocrystal, an inorganic perovskite type semiconductor, an organic-inorganic hybrid perovskite type nanocrystal, and an organic light-emitting material. The inorganic semiconductor nanocrystal comprises one or more of a doped or undoped II-V group compound semiconductor, a III-V group compound semiconductor, a IV-VI group compound semiconductor and a core-shell structure semiconductor thereof. The inorganic perovskite type semiconductor can be doped or undoped, and specifically, the structural general formula of the inorganic perovskite type nanocrystal is AMX3Wherein A is Cs+Ion, M is a divalent metal cation, including but not limited to Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+、Eu2+X is a halide anion, including but not limited to Cl-、Br-、I-. The structural general formula of the organic-inorganic hybrid perovskite type semiconductor is BMX3Wherein B is an organic amine cation including but not limited to CH3(CH2)n-2NH3 +(n.gtoreq.2) or NH3(CH2)nNH3 2+(n is not less than 2), when n is 2, the inorganic metal halide octahedron MX6 4-The metal cations M are positioned in the center of a halogen octahedron through connection in a roof sharing mode, and the organic amine cations B are filled in gaps among the octahedrons to form an infinitely extending three-dimensional structure; inorganic metal halide octahedra MX linked in a coterminous manner when n > 26 4-The organic amine cation bilayer (protonated monoamine) or the organic amine cation monolayer (protonated diamine) is inserted between the layers, and the organic layer and the inorganic layer are overlapped with each other to form a stable two-dimensional layered structure; m is a divalent metal cation including, but not limited to, Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+、Eu2+(ii) a X is a halide anion, including but not limited to Cl-、Br-、I-The light emitting form of the light emitting layer 203 may be mainly light emitting of the organic material, corresponding to an organic light emitting (O L ED) device, or mainly light emitting of the quantum dot material, corresponding to a quantum dot light emitting (Q L ED) device, according to the choice of the material of the light emitting layer 203.
Further, the second functional layer 204 is an electron functional layer for transporting electrons, including but not limited to an electron transport layer and an electron injection layer disposed on the light emitting layer 203. Wherein the electron transport layer preferably has a thickness of 30nm-60nm, and the electron transport layer is not limited to be made of oxide electron transport material, such as n-type ZnO and TiO2、SnO、Ta2O3、AlZnO、ZnSnO、InSnO、Alq3、Ca、Ba、CsF、LiF、CsCO3Preferably n-type zinc oxide having high electron transport properties; the material of the electron transport layer can also be a sulfide electron transport material or an organic electron transport material. The material of the electron injection layer can be selected from Ca, Ba and other metals with low work functionAlternatively, CsF, &lTtTtranslation = L "&gTtL &lTt/T &gTtiF, CsCO3The compound can also be other electrolyte type electron transport layer materials.
Further, the top electrode 205 is a cathode, the thickness of which is preferably 50nm to 150nm, and the material of the top electrode is one or more of various conductive carbon materials, conductive metal oxide materials and metal materials; wherein the conductive carbon material includes, but is not limited to, doped or undoped carbon nanotubes, doped or undoped graphene oxide, C60, graphite, carbon fibers, porous carbon, or mixtures thereof; conductive metal oxide materials include, but are not limited to, ITO, FTO, ATO, AZO, or mixtures thereof; metallic materials include, but are not limited to, Al, Ag, Cu, Mo, Au, or alloys thereof; wherein the metal material has a form including, but not limited to, a dense thin film, a nanowire, a nanosphere, a nanorod, a nanocone, a hollow nanosphere, or a mixture thereof; preferably, the cathode is Ag or Al.
In the embodiment of the present invention, the encapsulation structure 4 is formed on the substrate 1 and the light emitting device 2 as a protective layer for blocking water and oxygen to cover the light emitting device 2, so as to prevent a light emitting defect caused by water or oxygen permeating into the light emitting device 2; a composite layer is arranged between the light emitting device 2 and the encapsulation structure 4. The package structure 4 may be made of a material with good sealing performance, and further, in order to ensure the performance of the light emitting device 2, the material of the package structure 4 cannot react with the material of each layer of the light emitting device 2 according to the embodiment of the present invention.
Referring to fig. 1 and 4, in one embodiment, as shown in fig. 4, the package structure 4 includes: a package cover plate 401 spaced apart from the light emitting device 2 by a preset distance, and a frit layer 402 at an edge of the light emitting device 2 and disposed between the substrate 1 and the package cover 401; the composite material layer 31 may refer to a surface disposed opposite to the upper surface of the light emitting device 2 among the inner side surfaces of the package cover 401. The preset distance may be equal to the thickness of the composite material layer 31, or greater than the thickness of the composite material layer 31; the encapsulating cover 401 may preferably be an encapsulating cover glass.
In one embodiment, as shown in fig. 5, in combination with fig. 2 and 5, the composite material layer 32 may be formed on the substrate 1 and the light emitting device 2 to completely cover the light emitting device 2, and the package structure 4 may be a package board 403 bonded on the composite material layer 3. Wherein, the bonding mode can be encapsulation adhesive bonding.
In the embodiment of the invention, the composite material layer is a composite material layer of a carbon nano material and a metal nano hexagonal structure material, and is prepared by heating the carbon nano material and the metal nano hexagonal structure material. The composite material layer is prepared by heating the carbon nano material and the metal nano hexagonal structure material, and the carbon nano material has excellent light transmission, and the metal nano particles have excellent heat-conducting property, so that the carbon nano material and the metal nano hexagonal structure material are combined to form the composite material, the light transmission required by packaging can be met, and the heat conductivity of the composite material can also be met. Specifically, carbon nano-material is itself the light transmissivity good, metal nanometer hexagonal structure material heat conductivity itself is high, specific surface energy is great, metal nanometer hexagonal structure material tends to the particle reunion and reduces self surface energy in the heating process, form group sheet structure, there are a large amount of holes between the different group sheet structures, carbon nano-material then couples together noncontacting hole, the structure that forms the UNICOM increases the heat conduction, therefore the combined material layer has good heat conductivity and light transmissivity, the heat that can give out in the active absorption device course of operation, the life-span of extension device. Wherein, the metal nano hexagonal structure material comprises at least one of AgNPH, CuNPH, AuNPH, AlNPH, WNPH, FeNPH, NiNPH, PtNPH, ZnNPH, SnNPH and MoNPH; the carbon nano material comprises at least one of graphene, graphene oxide and carbon nano tubes.
In the embodiment of the invention, the thickness of the composite material layer has a great influence on the heat conductivity and the light transmittance of the device, and preferably, the composite material layer is a thin film layer with the thickness of 10nm-50 nm. When the thickness is less than 10nm, the thermal conductivity of the composite material layer is poor, and on the other hand, when the thickness is more than 50nm, the thickness of the entire device increases and the light transmittance decreases.
The display device provided by the embodiment of the invention comprises a substrate 1, a light-emitting device 2, an encapsulation structure 4 and a composite material layer. The encapsulation structure 4 is formed on the substrate 1 and the light emitting device 2 to cover the light emitting device 2; a composite layer is arranged between the light emitting device 2 and the encapsulation structure 4. The combined material layer is the combined material layer of carbon nano-material and metal nanometer hexagonal structure material, because carbon nano-material has superior light transmissivity, metal nanoparticle has superior heat conductivility, both combine to have superior light transmissivity promptly after forming the combined material layer, also can effectively absorb the device heat dissipation's heat simultaneously to the heat that makes the device in time gives off, guarantees the continuation and stability of its heat conductivity, is favorable to improving the life-span of device.
The display device provided by the embodiment of the invention can be prepared by the preparation method of the display device provided by the following embodiment.
The embodiment of the invention provides a preparation method of display equipment, which comprises the following steps:
step S101: a substrate is provided.
Step S102: a light emitting device is formed on a substrate.
Step S103: and arranging a composite material layer on the packaging structure.
Step S104: and encapsulating the encapsulation structure and the composite material layer on the substrate and the light-emitting device to cover the light-emitting device, wherein the composite material layer is positioned between the light-emitting device and the encapsulation structure, and the composite material layer is a composite layer of a carbon nano material and a metal nano hexagonal structure material.
In the embodiment of the present invention, the description of the substrate, the light emitting device, the composite layer, and the package structure related to steps S101, S102, S103, and S104 is consistent with the description of the substrate 1, the light emitting device 2, the composite layer, and the package structure 4 related to the foregoing embodiments, and will not be described here.
In the embodiment of the present invention, the sequence of steps S101, S102, S103, and S104 is not limited.
In the embodiment of the present invention, the method of forming the light emitting device on the substrate and the method of disposing the composite material layer on the encapsulation structure may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ionic layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, a co-precipitation method; physical methods include, but are not limited to, physical coating methods or solution methods, wherein solution methods include, but are not limited to, spin coating, transfer printing, blade coating, dip-draw, dipping, spray coating, roll coating, casting, slit coating, bar coating; physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition.
Further, taking a light emitting device with a positive structure, in which the first functional layer includes a hole transport layer disposed on the anode, and the second functional layer includes an electron transport layer disposed on the light emitting layer as an example, the step S102 specifically includes:
step S11: depositing an anode on the substrate, carrying out ultrasonic cleaning for 10-20 min, and drying.
As a preferred embodiment, step S11 may specifically be: and (3) putting the substrate deposited with the anode into acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning of each step lasts for 10-20 min to remove impurities on the substrate, and after the ultrasonic cleaning is finished, putting the substrate deposited with the anode into a clean oven for drying.
Step S12: depositing a hole transport layer on the anode and annealing at 100-200 deg.C for 10-30 min.
Step S13: depositing the light emitting layer on the hole transport layer.
Step S14: depositing an electron transport layer on the luminescent layer, and heating at 60-100 ℃ for 20-40 min.
As a preferred embodiment, the heating process may be performed on a heating stage, and the solvent remaining on the light emitting layer may be effectively removed by heating at a temperature of 60 ℃ to 100 ℃ for 20min to 40 min.
Step S15: a cathode is deposited on the electron transport layer.
As a preferred embodiment, step S15 may specifically be: and (3) putting the sheet on which the functional layers are deposited into an evaporation bin, and thermally evaporating a layer of 50-150 nm metal silver or aluminum as a cathode through a mask plate.
Further, taking a light emitting device with an inversion structure, for example, the first functional layer includes an electron transport layer disposed on the cathode, and the second functional layer includes a hole transport layer disposed on the light emitting layer, then the step S102 specifically includes:
step S21: depositing a cathode on the substrate, carrying out ultrasonic cleaning for 10-20 min, and drying.
Step S22: depositing an electron transport layer on the cathode, and heating at 60-100 deg.C for 20-40 min.
Step S23: a light emitting layer is deposited on the electron transport layer.
Step S24: depositing a hole transport layer on the luminescent layer and annealing at 100-200 ℃ for 10-30 min.
Step S25: an anode is deposited on the hole transport layer.
Further, step S103 specifically includes:
step S1031: dispersing the metal nano hexagonal structure material in a polar organic solvent to form a solution containing the metal nano hexagonal structure material with the mass fraction of 2 wt% -40 wt%.
Step S1032: and adding the carbon nano material into the solution to form a mixed solution.
Step S1033: and depositing the mixed solution on a packaging structure, and heating to form a composite material layer.
As a preferred embodiment, step S1031 may specifically be dispersing the metal nano hexagonal structure material in a polar organic solvent to form a solution containing the metal nano hexagonal structure material with a mass fraction of 2 wt% to 40 wt%, and performing ultrasonic dispersion to obtain uniform dispersion. Wherein, the polar organic solvent is a solution which can be mutually dissolved with water and alcohol, and is preferably an NMP solution.
As a preferred example, in step S1032, 1mg to 10mg of the carbon nanomaterial may be added into the polar organic solvent to form a solution with a concentration mass of 0.05mg/ml to 0.5mg/ml, and after mixing, the solution is subjected to ultrasonic oscillation and mixed uniformly. The carbon nano materials with different contents have larger influence on the thermal conductivity, and when the content of the carbon nano materials added into the solution is lower than 0.05mg/ml, holes among different flaky structures cannot be completely connected by the carbon nano materials during heating, so that the carbon nano materials cannot conduct heat well; similarly, when the content of the carbon nano material solution is higher than 0.5mg/ml, the carbon nano material is greatly increased, so that the nano hexagonal structure is excessively overlapped, on one hand, the heated film is not smooth enough, water vapor and air are easily introduced, the service life of a device is influenced, on the other hand, the hole amount is increased, and heat conduction is not facilitated.
As a preferred embodiment, step S1033 may specifically be depositing the solution on the package structure by a solution method, and forming the composite material layer after heat treatment at 40 ℃ to 200 ℃ for 20min to 60 min. The surface activity of the metal nano hexagonal structure material can be increased through heating treatment, the metal nano hexagonal structure material is promoted to form a block structure, and then the carbon nano material is filled into gaps of the block structure to form a continuous structure, so that the heat conduction is facilitated.
Further, as a preferred embodiment, before step S103, a reheating treatment after cleaning and drying the package structure is further included. Specifically, the packaging structure can be subjected to ozone-ultraviolet baking for 15min-30 min.
The preparation is illustrated by way of example below:
(1) and (3) putting the ITO substrate into acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for 15min in each step. And after the ultrasonic treatment is finished, the substrate is placed in a clean oven to be dried for later use.
(2) After the ITO substrate is dried, a hole transport layer TFB is deposited on the ITO substrate, the thickness of the hole transport layer TFB is 80nm, and the ITO substrate is placed on a heating table at 150 ℃ to be heated for 15 min.
(3) And (3) after the step (2) is cooled, depositing quantum dots on the hole transport layer TFB, wherein the thickness of the layer is 40nm, and heating is not needed.
(4) After that, an electron transport layer ZnO with a thickness of 40nm was deposited. The sheet on which the electron transport layer ZnO was deposited was placed on a heating stage at 80 ℃ and heated for 30 minutes to remove the residual solvent.
(5) And (4) placing the sheets on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of 100nm metal silver through a mask plate. And finishing the preparation of the light-emitting device.
(6) And cleaning and baking the packaging glass cover plate, drying, carrying out ultraviolet ozone treatment for 30min, depositing a layer of composite layer of carbon nano material and metal nano hexagonal structure material on the packaging glass cover plate as a composite material layer, and annealing for 30min on a hot bench at 50 ℃.
(7) And packaging the packaging glass cover plate deposited with the composite material layer on the ITO substrate and the light-emitting device to cover the light-emitting device, so that the composite material layer is positioned between the light-emitting device and the packaging structure. After the test is finished, the test is ready for use.
The preparation method of the display device provided by the embodiment of the invention can prepare the display device with high heat dissipation efficiency, good light transmission, strong thermal stability, high luminous efficiency and long service life, and has the advantages of low process difficulty, simple operation and low cost, and can realize large-scale production.
The display device provided in the above embodiment can also be prepared by the method for preparing a display device provided in the following embodiment.
The embodiment of the invention provides another preparation method of display equipment, which comprises the following steps:
step S201: a substrate is provided.
Step S202: a light emitting device is formed on a substrate.
Step S203: a composite material layer is formed on the substrate and the light emitting device to cover the light emitting device.
Step S204: arranging a packaging structure on the substrate, the light-emitting device and the composite material layer to cover the composite material layer; wherein the composite material layer is a composite layer of carbon nano material and metal nano hexagonal structure material.
In the embodiment of the present invention, steps S201 and S202 are the same as those described in steps S101 and S102 of the previous embodiment, and will not be described here.
Further, step S203 specifically includes:
step S2031: dispersing the metal nano hexagonal structure material in a polar organic solvent to form a solution containing the metal nano hexagonal structure material with the mass fraction of 2 wt% -40 wt%.
Step S2032: and adding the carbon nano material into the solution to form a mixed solution.
Step S2033: and forming the mixed solution on the substrate and the light-emitting device to cover the light-emitting device, and forming a composite material layer after heating treatment.
The descriptions of step S2031 and step S2032 are the same as those of step S1031 and step S1032, and will not be described here.
As a preferred example, step S2033 may be specifically to deposit the solution on the light emitting device by film formation by a solution method, and form the composite material layer after heat treatment at 40 ℃ to 200 ℃ for 20min to 60 min.
As a preferred embodiment, step S204 may specifically be to encapsulate the encapsulation structure on the substrate, the light emitting device and the composite material layer by an encapsulation adhesive to cover the composite material layer.
Further, as a preferred embodiment, before step S204, a reheating treatment after cleaning and drying the package structure is further included. Specifically, the packaging structure can be subjected to ozone-ultraviolet baking for 15min-30 min.
The preparation method of the display device provided by the embodiment of the invention can prepare the display device with high heat dissipation efficiency, good light transmission, strong thermal stability, high luminous efficiency and long service life, and has the advantages of low process difficulty, simple operation and low cost, and can realize large-scale production.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A display device, comprising:
a substrate;
a light emitting device disposed on the substrate;
an encapsulation structure disposed on the substrate and the light emitting device to cover the light emitting device;
the composite material layer is arranged between the light-emitting device and the packaging structure, and is a composite material layer of a carbon nano material and a metal nano hexagonal structure material;
the metal nano hexagonal structure material comprises at least one of AgNPH, CuNPH, AuNPH, AlNPH, WNPH, FeNPH, NiNPH, PtNPH, ZnNPH, SnNPH and MoNPH; the mass ratio of the carbon nano material to the metal nano hexagonal structure material is (5-50): (2-40).
2. The display device of claim 1, wherein the carbon nanomaterial comprises at least one of graphene, graphene oxide, and carbon nanotubes.
3. The display device of claim 1, wherein the composite layer has a thickness of 10nm to 50 nm.
4. A method for manufacturing a display device, the method comprising:
providing a substrate;
forming a light emitting device on the substrate;
arranging a composite material layer on the packaging structure;
arranging a packaging structure provided with a composite material layer on the substrate and the light-emitting device to cover the light-emitting device, wherein the composite material layer is arranged between the light-emitting device and the packaging structure, and the composite material layer is a composite material layer of a carbon nano material and a metal nano hexagonal structure material;
wherein the metal nano hexagonal structure material comprises at least one of AgNPH, CuNPH, AuNPH, AlNPH, WNPH, FeNPH, NiNPH, PtNPH, ZnNPH, SnNPH and MoNPH; the mass ratio of the carbon nano material to the metal nano hexagonal structure material is (5-50): (2-40).
5. A method for manufacturing a display device, the method comprising:
providing a substrate;
forming a light emitting device on the substrate;
forming a composite material layer on the substrate and the light emitting device to cover the light emitting device;
arranging an encapsulation structure on the substrate and the light-emitting device covered by the composite material layer to cover the light-emitting device covered by the composite material layer; the composite material layer is a composite layer of a carbon nano material and a metal nano hexagonal structure material;
wherein the metal nano hexagonal structure material comprises at least one of AgNPH, CuNPH, AuNPH, AlNPH, WNPH, FeNPH, NiNPH, PtNPH, ZnNPH, SnNPH and MoNPH; the mass ratio of the carbon nano material to the metal nano hexagonal structure material is (5-50): (2-40).
6. The method of manufacturing according to claim 4, wherein the manufacturing of disposing the composite material layer on the package structure includes the steps of:
dispersing the metal nano hexagonal structure material in a polar organic solvent to form a solution containing the metal nano hexagonal structure material with the mass fraction of 2 wt% -40 wt%;
adding a carbon nano material into the solution to form a mixed solution;
and depositing the mixed solution on the packaging structure, and heating to form the composite material layer.
7. The production method according to claim 5, wherein the production of forming a composite material layer on the substrate and the light-emitting device comprises the steps of:
dispersing the metal nano hexagonal structure material in a polar organic solvent to form a solution containing the metal nano hexagonal structure material with the mass fraction of 2 wt% -40 wt%;
adding a carbon nano material into the solution to form a mixed solution;
and forming the mixed solution on the substrate and the light-emitting device to cover the light-emitting device, and heating to form the composite material layer.
8. The production method according to claim 6 or 7, wherein the mass concentration of the carbon nanomaterial in the solution is 0.05mg/ml to 0.5 mg/ml.
9. The production method according to claim 6 or 7, wherein the temperature of the heat treatment is 40 ℃ to 200 ℃; the time of the heating treatment is 20min-60 min.
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