CN109378348A - A kind of solar battery sheet and solar cell module - Google Patents
A kind of solar battery sheet and solar cell module Download PDFInfo
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- CN109378348A CN109378348A CN201811473300.6A CN201811473300A CN109378348A CN 109378348 A CN109378348 A CN 109378348A CN 201811473300 A CN201811473300 A CN 201811473300A CN 109378348 A CN109378348 A CN 109378348A
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- 238000002955 isolation Methods 0.000 claims abstract description 30
- 238000004070 electrodeposition Methods 0.000 claims abstract description 3
- 238000003466 welding Methods 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000011218 segmentation Effects 0.000 claims 3
- 238000005520 cutting process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a kind of solar battery sheet, including cell piece ontology, a positive main electrode is set to the edge of ontology front side, remaining positive main electrode is spaced apart in the positive centre of ontology;One back side main electrode is set to the edge of the ontology back side other side, remaining back side main electrode is corresponding with positive main electrode position is located in the middle, and the conduction between intermediate front and back main electrode is realized by setting conductive hole, and beside of the intermediate positive main electrode by extrorse positive main electrode side is equipped with electric isolation slot, beside of the intermediate back side main electrode by extrorse back side main electrode side is also equipped with electric isolation slot.The invention also discloses a kind of solar cell modules.The present invention, by changing the design of conducting wire, can solve the problems, such as that full wafer battery needs cutting and physical separation and realizes " imbrication " under the premise of keeping present battery piece production technology to greatest extent.
Description
Technical field
The invention belongs to solar battery, it is specifically related to a kind of solar battery sheet and solar cell module.
Background technique
Solar battery sheet is a kind of device that the sunlight received can be converted to electric energy, and matrix is usually by crystalline substance
The thin slice that body silicon manufactures.
For appearance, the common specification of current solar battery sheet is side length 156mm x 156mm, using 5 main grids
The solar battery sheet of line.And requirement with advances in technology and to cell piece power is continuously improved, the area of cell piece and
The main grid number of lines used also becomes more becoming larger, but also needing more weldings (usually apply tin copper strips) on component
Welding main gate line simultaneously makes cell piece be together in series.See Fig. 1 a, 1b, 2,3, in figure, 1 is solar battery sheet, and 2 be thin grid line,
3a, 3b are respectively the main electrode (that is to say main gate line) of front and back, and 4 be welding.
It is well known that the internal resistance of connection welding belt can cause electricity between cell piece in the matrix resistance and component of solar battery
The loss of pond piece and component internal, the final output power for reducing component itself.
Loss caused by the matrix internal resistance of solar battery, mainly by the electric current of monolithic battery because matrix internal resistance is drawn
The thermal losses risen, if monolithic battery can be divided into n small pieces be then together in series again, the electricity of each small on piece generation
Stream will become the 1/n of a full wafer, to reduce thermal losses (according to electric current thermal losses formula P=I2R).But to reach this
A purpose, the mode generallyd use at present are to connect to weld (i.e. again after monolithic battery to be cut completely through into n equal part small pieces
So-called " imbrication ").The disadvantages of the method are as follows increasing the cutting loss of cell piece, the complexity of welding procedure is also increased.
And the use of component series connection welding introduces the resistance of welding itself, increases the thermal losses of line resistance, and
As the width of battery main gate line is more and more narrow in design, the difficulty of welding is also increasing.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of solar battery sheet and solar cell module, Neng Gou
Under the premise of keeping present battery piece production technology to greatest extent, by changing the structure of cell piece conducting wire, not to electricity
In the case that pond piece does separation cutting, electrical series between different small pieces, achieve the effect that similar " imbrication " in realization cell piece,
It needs to cut simultaneously physical separation to overcome the problems, such as to exist in the prior art full wafer battery, while also reducing to the maximum extent
The use of traditional welding substantially only needs to be bonded using conducting resinl or electrocondution slurry.
In order to realize above-mentioned technological innovation, the present invention is adopted the following technical scheme that:
On the one hand, a kind of solar battery sheet, including cell piece ontology, ontology front have the thin grid of conduction being laterally arranged
Line and several longitudinally disposed positive main electrodes, the ontology back side have several back side main electrodes, and a positive main electrode is set to ontology
The edge of positive side, remaining positive main electrode are spaced apart in the positive centre of ontology;One back side main electrode is carried on the back set on ontology
The edge of the face other side, remaining back side main electrode is corresponding with positive main electrode position is located in the middle, and conductive by setting
The conduction between intermediate front and back main electrode is realized in hole, and all is located in the middle positive main electrode by extrorse front
The beside of main electrode side is equipped with the electric isolation slot for realizing PN junction electric isolation, all to be located in the middle the main electricity in the back side
Beside of the pole by extrorse back side main electrode side is also equipped with the electric isolation for realizing back side conduction field electric isolation
Slot.
The conductive hole is by the perforation being distributed in the main electrode of front and back and the conductive metal slurry structure being filled in perforation
At.
The front main electrode, back side main electrode are continous way conductive printed wire road or segmented conductive printed wire road.
On the other hand, a kind of solar cell module, including multiple single strings being connected by welding, each single string is by multiple
Solar battery sheet is stacked on top of each other by the front and back main electrode at the edge of adjacent solar battery piece and passes through conducting resinl or leads
Plasma-based material is bonded the composition that is connected in series.
Using a kind of solar battery sheet of the invention and solar cell module, have several advantages that
1, the solar battery sheet can be under the premise of keeping present battery piece production technology, by changing electricity to greatest extent
The design of pond conducting wire solves the problems, such as that full wafer battery needs cutting and physical separation and realizes " imbrication ";
2, compared to traditional components, large stretch of battery can be can be realized by simple conducting resinl or electrocondution slurry bonding
Single series winding connects.
3, compared to traditional components, have shading-area small using solar components of the invention, effective area is big, heat waste
Consume low advantage.To realize in the case where identical solar components area, it can produce more power outputs.
Detailed description of the invention
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 a, 1b are the structural schematic diagram of the front and back of traditional solar battery sheet respectively.
Fig. 2 is the schematic cross-sectional view of traditional solar battery sheet.
Fig. 3 is the cross-sectional view of traditional solar battery string.
Fig. 4 a, 4b are the structural schematic diagram of the front and back of solar battery sheet of the invention respectively.
Fig. 5 is the schematic cross-sectional view of solar battery sheet of the invention.
Fig. 6 is the structural schematic diagram of solar battery string of the invention.
Fig. 7 is the schematic cross-sectional view of solar battery string of the invention.
Specific embodiment
Solar battery sheet of the invention is same as the prior art as shown in Fig. 4 a, 4b, 5, equally also includes battery
Piece ontology 5, it is three layers that cell piece ontology 5, which divides, and positive one layer is PN junction 101, and one layer of the back side is back side conduction field 102, in
Between one layer be crystal silicon substrate 103.Back side conduction field is Al-BSF or PN junction.
Ontology front has the conductive fine grid line 2 being laterally arranged and several longitudinally disposed positive main electrode 6a (i.e. positive
Main gate line), the ontology back side has longitudinally disposed several back sides main electrode 6b (i.e. back side main gate line).Unlike, a front
Main electrode 6a is set to the edge of ontology front side, remaining front main electrode 6a (as example, two are shown schematically as in figure,
Actual conditions can be any item) the positive centre of ontology is equally distributed in the positive main electrode 6a at edge.The main electricity in one back side
Pole 6b is set to the edge of the ontology back side other side, remaining back side main electrode 6b is opposite with the position positive main electrode 6a is located in the middle
It answers, and realizes the conduction between intermediate front and back main electrode 6a, 6b by setting conductive hole 7.And the front of all centres is main
Beside of the electrode 6a by the extrorse front side main electrode 6a is equipped with electric isolation slot 8, and the tools such as laser can be used
Fluting, to realize the physics and electric isolation of PN junction;The back side main electrode 6b of all centres depends on extrorse back side main electrode 6b
The beside of side is also equipped with electric isolation slot 8, using tool chases such as laser, with realize the electricity of back side conduction field every
From.
Conductive hole 7 is by the perforation being distributed in main electrode 6a, 6b of front and back and the conductive metal slurry being filled in perforation
It constitutes.The quantity of conductive hole is The more the better by electrical requirement, but considers the brittleness and processing cost of cell piece, to its quantity
It is controlled, optimization quantity is 3-12.But with becoming larger for battery chip size, quantity may also up to tens.
Positive main electrode 6a, back side main electrode 6b be continous way conductive printed wire road or segmented conductive printed wire road,
With the width and shape not limited.The mean breadth of main electrode is generally not greater than 3mm.
The spacing of the thin grid line of the conducting wire of parallel interval is not more than 5mm.
Electric isolation slot can also be made other than laser makes of chemical etching or other methods.Width is several
Micron is to several millimeters, as long as depth does not cut off crystal silicon substrate 103, major function through PN junction and back side conduction field
It is to disconnect being electrically connected at left and right sides of isolation channel, but do not destroy the integrality of cell piece.
When ontology back side monolith is Al-BSF, i.e. Al-BSF is to realize aluminium by electric isolation slot in continuous situation
The electric isolation of back surface field.
The positive thin grid line of ontology can be discontinuous, i.e., the conduction in each piece of region divided by positive main electrode is thin
Grid line one end is connected with positive main electrode, and the other end is not connected with positive main electrode, to be formed in the position of electric isolation slot
The strip extended along positive main electrode is without grid region 21 (as is shown in fig. 4 a), and the strip is without grid region width than electricity
The width of isolation channel is big, is some tens of pm to several millimeters, electric isolation slot position is inside no grid region.By main in front
The position setting strip of electric isolation slot to be formed is without grid region by electrode, in strip without cutting production electricity inside grid region
Isolation channel is learned, due to not contacting with thin grid line, the conductive powder of formation conductive fine grid line in this way would not fall into electric isolation slot
In, to ensure that electric isolation effect.
Al-BSF may not be monolith, but discontinuous.In this case, divided by back side main electrode each
Al-BSF a side in block region is connected with back side main electrode, and another side is not connected with back side main electrode, thus in ontology
The back side forms the electric isolation slot that the strip extended along back side main electrode replaces the ontology back side without Al-BSF region.It is such
Structure eliminates overleaf cutting electric isolation slot.
When back side conduction field is PN junction, conductive fine grid line is also laterally arranged in the ontology back side, has with ontology front same
Structure, the thin grid line in each piece of region divided by back side main electrode at the back side is also that one end is connected with main electrode, another
End is not connected with main electrode, to form the strip extended along back side main electrode direction without grid line area in the position of electric isolation slot
Domain, electric isolation slot position is in strip without in grid region.It the solar battery sheet two sides formed in this way can light power generation.
In addition, front and back main electrode 6a, 6b at edge can also be used to and the stacked bonding of welding, production solar components.
In conjunction with shown in Fig. 6~Fig. 7, solar cell module of the invention, including multiple connected single strings, each single string by
Multiple above-mentioned solar battery sheets are stacked on top of each other by front and back main electrode 6a, 6b at the edge of adjacent solar battery piece
And the composition that is connected in series is bonded by conducting resinl or electrocondution slurry.As shown in Figure 6, Figure 7, solar battery string can be built into.Number
Such a battery strings are done mutual series/parallel by conductive welding and are connected, can structure using links such as lamination, lamination, encapsulation
Build up solar components.
It is realized and is interconnected by conductive welding between front and back main electrode 6a, 6b at adjacent single string edge.
In conclusion being had several advantages that using solar cell module and its solar battery sheet of the invention
1, the solar battery sheet can be led under the premise of keeping present battery piece production technology to greatest extent by changing
The design of electric line can guarantee the integrality of full wafer battery, solves full wafer battery and needs to cut simultaneously physical separation and realize " folded
Watt " the problem of;
2, the use for reducing traditional welding to the maximum extent in the welding process of solar components, substantially only needs
Conducting resinl or electrocondution slurry.Assembling process is enormously simplified, product reliability is improved.
3, each small pieces can be realized (including a main grid and coupled thin grid line institute by tool chases such as laser
The range of covering) between electrical insulation, the series connection between each small pieces is then realized by the conductive hole on main grid.Such side
Formula can be realized in monolithic battery in the case where not needing separately each small pieces and be connected between each small pieces.Such structure, which has, to be hidden
The advantages such as light area is small, and effective area is big, and thermal losses is low.To realize in the case where identical solar components area,
It can produce more power outputs.
But those of ordinary skill in the art it should be appreciated that more than embodiment be intended merely to illustrate this
Invention, and be not used as limitation of the invention, as long as in spirit of the invention, to embodiment described above
Variation, modification will all fall within the scope of claims of the present invention.
Claims (11)
1. a kind of solar battery sheet, including cell piece ontology, ontology front has the conductive fine grid line being laterally arranged and longitudinal direction
Several the positive main electrodes being arranged, the ontology back side have several back side main electrodes, it is characterised in that: a positive main electrode is set to this
The edge of body front side, remaining positive main electrode are spaced apart in the positive centre of ontology;One back side main electrode is set to ontology
The edge of the back side other side, remaining back side main electrode is corresponding with positive main electrode position is located in the middle, and is led by setting
The conduction between intermediate front and back main electrode is realized in electric hole, and it is all be located in the middle positive main electrode by it is extrorse just
The beside of face main electrode side is equipped with the electric isolation slot for realizing PN junction electric isolation, all to be located in the middle back side master
Electrode by extrorse back side main electrode side beside be also equipped with realize back side conduction field electric isolation electricity every
From slot.
2. a kind of solar battery sheet according to claim 1, it is characterised in that: remaining described positive main electrode is equidistant
It is distributed in the positive centre of ontology.
3. a kind of solar battery sheet according to claim 1 or 2, it is characterised in that: the conductive hole by be distributed in just,
Perforation in the main electrode of the back side and the conductive metal slurry being filled in perforation are constituted.
4. a kind of solar battery sheet according to claim 1 or 2, it is characterised in that: the front main electrode, back side master
Electrode is continous way conductive printed wire road or segmented conductive printed wire road.
5. a kind of solar battery sheet according to claim 1 or 2, it is characterised in that: the ontology is positive positive
In each piece of region of main electrode segmentation, described conductive fine grid line one end is connected with positive main electrode, the other end not with positive main electricity
Extremely it is connected to be formed the strip extended along positive main electrode without grid region, the electric isolation slot position of the front ontology is in item
Shape without grid region inside.
6. a kind of solar battery sheet according to claim 1 or 2, it is characterised in that: back side conduction field is PN junction,
The ontology back side has the conductive fine grid line being laterally arranged.
7. a kind of solar battery sheet according to claim 6, it is characterised in that: the ontology back side by the main electricity in the back side
Pole segmentation each piece of region in, described conductive fine grid line one end is connected with back side main electrode, the other end not with back side main electrode phase
Even to form the strip extended along back side main electrode without grid region, the electric isolation slot position of the back side ontology in strip without
Inside grid region.
8. a kind of solar battery sheet according to claim 1 or 2, it is characterised in that: back side conduction field is aluminium back
?.
9. a kind of solar battery sheet according to claim 8, it is characterised in that: the ontology back side by the main electricity in the back side
Al-BSF a side in each piece of region of pole segmentation is connected with back side main electrode, and another side is not connected with back side main electrode,
To form the strip instead of the electric isolation slot at the ontology back side without Al-BSF region.
10. the solar cell module that cell piece according to claim 1 or 2 is constituted, it is characterised in that: including multiple logical
Cross single string that welding is connected, each single string by multiple solar battery sheets by the edge of adjacent solar battery piece just, back
Face main electrode is stacked on top of each other and is bonded the composition that is connected in series by conducting resinl or electrocondution slurry.
11. solar cell module according to claim 10, it is characterised in that: by the welding by adjacent single string two
The front and back main electrode at the edge at end is interconnected to constitute.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110982463A (en) * | 2019-10-30 | 2020-04-10 | 上海润势科技有限公司 | Conductive adhesive and solar cell |
WO2020103358A1 (en) * | 2018-11-19 | 2020-05-28 | 夏承周 | Solar cell sheet and solar cell assembly |
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