CN102956746A - Manufacturing method of metallization wrap-through (MWT) battery - Google Patents
Manufacturing method of metallization wrap-through (MWT) battery Download PDFInfo
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- CN102956746A CN102956746A CN2012104274162A CN201210427416A CN102956746A CN 102956746 A CN102956746 A CN 102956746A CN 2012104274162 A CN2012104274162 A CN 2012104274162A CN 201210427416 A CN201210427416 A CN 201210427416A CN 102956746 A CN102956746 A CN 102956746A
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Abstract
The invention provides a manufacturing method of a metallization wrap-through (MWT) battery, and the manufacturing method comprises the following steps of symmetrically perforating a silicon chip so as to acquire a plurality of through holes which are symmetrically distributed in the silicon chip; carrying out the diffusion technique on the silicon chip; scribing the surface of the diffused silicon chip according to the through holes so as to divide the silicon chip into a plurality of sub-cells, and ensuring that each sub-cell comprises a through hole; printing a front electrode on the front surface of the silicon chip; printing an aluminum back surface field on the back surface of the silicon chip; and printing a connecting electrode on the back surface of the silicon chip, and making the sub-cells mutually connected with each other in series in the longitudinal direction and mutually connected with each other in parallel in the transverse direction, wherein the front electrode is communicated with the connecting electrode through the through hole. According to the manufacturing method of the MWT battery, one silicon battery chip is physically divided into a plurality of sub-cells, and the sub-cells are connected with one another in series or in parallel, so that the efficiency bottleneck caused by the nonuniformity of material impurities and nonuniformity in diffusion can be reduced.
Description
Technical field
The present invention relates to solar cell and make the field, relate in particular to the manufacture method of a kind of MWT (MetallisationWrap-Through, metal piercing is reeled) battery.
Background technology
When the non-renewable energy resources such as electric power, coal, oil signal for help repeatedly, when energy problem became the bottleneck of restriction international community economic development day by day, increasing country came into effect " sunlight program ", and the exploitation solar energy resources is sought the new power of economic development.The solar cell manufacturing industry of various countries falls over each other to drop into huge fund, and expanding production is to strive one seat.
The photoelectric conversion efficiency of solar cell has close association with the light-receiving area of battery front surface.Traditional solar cell is subject to its front electrode and easily causes the loss of a large amount of light-receiving areas, thereby causes photoelectric conversion efficiency low.
In order to improve photoelectric conversion efficiency, a kind of new technology is arisen at the historic moment.MWT (metal piercing coiling technology) is developed and is applied in the solar cell manufacturing technology.This technology realizes the technique of perforation at former silicon chip by laser or additive method, reach primary electrode is guided to purpose on the same face, increases the transformation efficiency of battery by reducing the BUSBAR shading-area.
At present, the single battery efficient of MWT structure can reach about 20%, and component efficiency can reach 17%, and its major advantage is to have realized coplanar assembly unit and has reduced positive shading loss, and can be applied to large-scale production and manufacturing.
But industry is still expected the solar cell of MWT structure is carried out new technological improvement to obtain better photoelectric conversion result.
Summary of the invention
The present inventor has made brand-new improvement to the manufacturing process of MWT battery on existing crystal silicon cell basis.By the design of new construction and technique, at some sub-batteries of a silicon chip preparation, and this a little battery strings can be joined, can avoid so inhomogeneous because of silicon chip impurity and spread the inhomogeneous efficiency bottle neck problem that causes.Facts have proved, manufacture method of the present invention is applied to have on the polysilicon chip very good effect.
Particularly, the present invention proposes a kind of manufacture method of MWT battery, may further comprise the steps: on a silicon chip, punch symmetrically, to obtain a plurality of through holes symmetrical on described silicon chip; Implement diffusion technology at described silicon chip; According to described a plurality of through holes, ruling through the silicon chip surface of diffusion, described silicon chip is divided into a plurality of sub-batteries, so that each in described a plurality of sub-battery comprises a through hole; At the front of described silicon chip printing front electrode; Back up aluminium back surface field at described silicon chip; And at the back up connecting electrode of described silicon chip, so that lontitudinal series and laterally being connected in parallel to each other each other between described a plurality of sub-battery, wherein said front electrode and described connecting electrode are via described through hole conducting.
Preferably, in above-mentioned manufacture method, described silicon chip is P type silicon chip.
Preferably, in above-mentioned manufacture method, the step of described punching and the step of described line are all carried out with laser.
Preferably, in above-mentioned manufacture method, described front electrode is radially electrode centered by the through hole in this sub-battery in each sub-battery.
Preferably, in above-mentioned manufacture method, before the step of described printing front electrode and after the step in described line, the method may further include: at the front of described silicon chip plating silicon nitride anti-reflecting film, wherein the thickness of this silicon nitride anti-reflecting film is that 80nm, refractive index are 2.1 by the plasma enhanced chemical vapor deposition method.
Preferably, in above-mentioned manufacture method, described diffusion technology is the phosphorus oxychloride diffusion, and the surface resistivity through spreading is 80omh/Sq.
Preferably, in above-mentioned manufacture method, the diameter of described through hole is 200 μ m.
Should be appreciated that the above generality of the present invention is described and the following detailed description all is exemplary and explanat, and be intended to the further explanation that the invention provides for as claimed in claim.
Description of drawings
Comprise that accompanying drawing is for providing the present invention further to be understood, they are included and are consisted of the application's a part, and accompanying drawing shows embodiments of the invention, and play the effect of explaining the principle of the invention with this specification.
In the accompanying drawing:
Fig. 1 schematically shows the flow chart according to the key step of the manufacture method of MWT battery of the present invention.
Fig. 2 schematically shows the front surface of MWT battery made according to the method for the present invention.
Fig. 3 schematically shows the back of the body surface of MWT battery made according to the method for the present invention.
Embodiment
Now with embodiments of the present invention will be described by referring to the drawings in detail.Now will be in detail with reference to the preferred embodiments of the present invention, its example is shown in the drawings.In the case of any possible, in institute's drawings attached, will represent with identical mark same or analogous part.In addition, although employed term is to select from public term among the present invention, but some mentioned terms may be that the applicant selects by his or her judgement in the specification of the present invention, and its detailed meanings illustrates in the relevant portion of the description of this paper.In addition, require not only by employed actual terms, but also will understand the present invention by the meaning that each term contains.
Fig. 1 schematically shows the flow chart according to the key step of the manufacture method of MWT battery of the present invention.As shown in Figure 1, the manufacture method 100 of MWT battery of the present invention mainly may further comprise the steps:
Step 101: punching:
For example, silicon chip can be the P type silicon chip of 1.5-2.5omh.cm.On silicon chip, punch symmetrically, to obtain a plurality of through holes symmetrical on described silicon chip.For example, with reference to figure 2, can on silicon chip 200, make a call to equably 9 through holes 201 with laser.The diameter of each through hole 201 can be about 200 μ m.These through holes 201 run through whole silicon chip 200 along the thickness direction of silicon chip 200, become the passage of the front and back conducting that realizes the MWT battery.Certainly, the quantity of punching can be selected according to actual needs, and the present invention is not limited in embodiment shown in Figure 2.
Step 102: diffusion technology:
Implement diffusion technology at silicon chip.Preferably, this diffusion technology is the phosphorus oxychloride diffusion, and the surface resistivity through spreading is 80omh/Sq.
Step 103: line:
According to above-mentioned a plurality of through holes 201, ruling through the silicon chip surface of diffusion, silicon chip 200 is divided into a plurality of sub-batteries 202 (as shown in Figures 2 and 3), so that each in described a plurality of sub-battery 202 comprises a through hole 201.Preferably rule with laser, and etching depth is controlled at approximately 1um, to remove diffusion zone fully.
Step 104: printing front electrode:
At the front of described silicon chip 200 printing front electrode.With reference to figure 2, this front electrode 203 is radially electrodes centered by the through hole 201 in this sub-battery 202 in each sub-battery 202.The printing of this front electrode can be adopted any known typography, for example silk screen printing etc.In addition, as known in the art, after the step of this printing front electrode, need to oven dry.Among Fig. 2 204 expression is used for the BUSBAR of weld assembly.
Step 105: printing aluminium back surface field:
Back up aluminium back surface field at described silicon chip.As shown in Figure 3, this aluminium back surface field 301 will cover the back of the body surface of each sub-battery 202.As known in the art, after the step of this printing aluminium back surface field, also need it is dried.
Step 106: printing connecting electrode:
Still with reference to figure 3, at the back up connecting electrode 302 of described silicon chip 200, so that lontitudinal series and laterally being connected in parallel to each other each other between described a plurality of sub-battery 202.Wherein, above-mentioned front electrode 203 and above-mentioned connecting electrode 302 electrically conduct via described through hole 201.As known in the art, after the step of this printing connection battery, also need it is dried.
In addition, according to a preferred embodiment of the present invention, before the step 104 of described printing front electrode and after the step 103 of described line, manufacture method of the present invention may further include: at the front of described silicon chip plating silicon nitride anti-reflecting film, wherein the thickness of this silicon nitride anti-reflecting film is preferably 80nm, refractive index is preferably 2.1 by plasma enhanced chemical vapor deposition method (PECVD).
Like this, according to above-mentioned MWT cell manufacturing method of the present invention, just can obtain a kind of silion cell solar cell of new construction, these battery characteristics mainly are:
(1) battery is divided into some sub-batteries;
(2) longitudinally sub-battery mutually connect and horizontal sub-battery parallel with one another; And
(3) radial front electrode can guarantee good electric current collection.
Inhomogeneous and spread inhomogeneous problem for impurity in the silicon chip of present crystal silicon cell, technology of the present invention is more suitable for the actual conditions in present crystal silicon cell with the silion cell Structure Distribute, thereby can obtain larger lifting in photoelectric conversion efficiency.
Those skilled in the art can be obvious, can carry out various modifications and variations and without departing from the spirit and scope of the present invention to above-mentioned exemplary embodiment of the present invention.Therefore, be intended to that the present invention is covered and drop in appended claims and the equivalence techniques scheme scope thereof to modification of the present invention and modification.
Claims (7)
1. the manufacture method of a MWT battery may further comprise the steps:
On a silicon chip, punch symmetrically, to obtain a plurality of through holes symmetrical on described silicon chip;
Implement diffusion technology at described silicon chip;
According to described a plurality of through holes, ruling through the silicon chip surface of diffusion, described silicon chip is divided into a plurality of sub-batteries, so that each in described a plurality of sub-battery comprises a through hole;
At the front of described silicon chip printing front electrode;
Back up aluminium back surface field at described silicon chip; And
At the back up connecting electrode of described silicon chip, so that lontitudinal series and laterally being connected in parallel to each other each other between described a plurality of sub-battery,
Wherein said front electrode and described connecting electrode are via described through hole conducting.
2. manufacture method as claimed in claim 1 is characterized in that, described silicon chip is P type silicon chip.
3. manufacture method as claimed in claim 1 is characterized in that, the step of described punching and the step of described line are all carried out with laser.
4. manufacture method as claimed in claim 1 is characterized in that, described front electrode is radially electrode centered by the through hole in this sub-battery in each sub-battery.
5. manufacture method as claimed in claim 1, it is characterized in that, before the step of described printing front electrode and after the step in described line, the method further comprises: at the front of described silicon chip plating silicon nitride anti-reflecting film, wherein the thickness of this silicon nitride anti-reflecting film is that 80nm, refractive index are 2.1 by the plasma enhanced chemical vapor deposition method.
6. manufacture method as claimed in claim 1 is characterized in that, described diffusion technology is the phosphorus oxychloride diffusion, and the surface resistivity through spreading is 80omh/Sq.
7. manufacture method as claimed in claim 1 is characterized in that, the diameter of described through hole is 200 μ m.
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| CN2012104274162A CN102956746A (en) | 2012-10-31 | 2012-10-31 | Manufacturing method of metallization wrap-through (MWT) battery |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014194557A1 (en) * | 2013-06-04 | 2014-12-11 | 南京日托光伏科技有限公司 | Silicon solar energy battery with positive electrode coated by film and manufacturing process thereof |
| WO2015003600A1 (en) * | 2013-07-08 | 2015-01-15 | 南京日托光伏科技有限公司 | Mwt solar battery |
| CN109378348A (en) * | 2018-11-19 | 2019-02-22 | 苏州捷运昇能源科技有限公司 | A kind of solar battery sheet and solar cell module |
| CN110707171A (en) * | 2019-10-24 | 2020-01-17 | 荣马实业有限公司 | MWT back contact type efficient photovoltaic cell and production process |
| CN112909132A (en) * | 2021-03-22 | 2021-06-04 | 江苏赛拉弗光伏***有限公司 | Preparation method of single crystalline silicon solar cell capable of increasing output voltage |
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| CN101710596A (en) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | Silicon solar battery |
| CN102299212A (en) * | 2011-09-28 | 2011-12-28 | 山东力诺太阳能电力股份有限公司 | Method for manufacturing crystal silicon solar cell |
| CN202307923U (en) * | 2011-09-28 | 2012-07-04 | 山东力诺太阳能电力股份有限公司 | Crystalline silica solar cell structure |
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- 2012-10-31 CN CN2012104274162A patent/CN102956746A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101710596A (en) * | 2009-11-23 | 2010-05-19 | 宁波太阳能电源有限公司 | Silicon solar battery |
| CN102299212A (en) * | 2011-09-28 | 2011-12-28 | 山东力诺太阳能电力股份有限公司 | Method for manufacturing crystal silicon solar cell |
| CN202307923U (en) * | 2011-09-28 | 2012-07-04 | 山东力诺太阳能电力股份有限公司 | Crystalline silica solar cell structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014194557A1 (en) * | 2013-06-04 | 2014-12-11 | 南京日托光伏科技有限公司 | Silicon solar energy battery with positive electrode coated by film and manufacturing process thereof |
| WO2015003600A1 (en) * | 2013-07-08 | 2015-01-15 | 南京日托光伏科技有限公司 | Mwt solar battery |
| CN109378348A (en) * | 2018-11-19 | 2019-02-22 | 苏州捷运昇能源科技有限公司 | A kind of solar battery sheet and solar cell module |
| CN110707171A (en) * | 2019-10-24 | 2020-01-17 | 荣马实业有限公司 | MWT back contact type efficient photovoltaic cell and production process |
| CN112909132A (en) * | 2021-03-22 | 2021-06-04 | 江苏赛拉弗光伏***有限公司 | Preparation method of single crystalline silicon solar cell capable of increasing output voltage |
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Application publication date: 20130306 |