CN109346419A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN109346419A CN109346419A CN201811479285.6A CN201811479285A CN109346419A CN 109346419 A CN109346419 A CN 109346419A CN 201811479285 A CN201811479285 A CN 201811479285A CN 109346419 A CN109346419 A CN 109346419A
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- metal
- layer
- metal oxide
- semiconductor devices
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 60
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000008878 coupling Effects 0.000 claims abstract description 48
- 238000010168 coupling process Methods 0.000 claims abstract description 48
- 238000005859 coupling reaction Methods 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 40
- 238000005498 polishing Methods 0.000 claims description 26
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/116—Manufacturing methods by patterning a pre-deposited material
- H01L2224/1161—Physical or chemical etching
- H01L2224/11614—Physical or chemical etching by chemical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/1183—Reworking, e.g. shaping
- H01L2224/1184—Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
- H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
- H01L2224/81902—Pressing the bump connector against the bonding areas by means of another connector by means of another bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811479285.6A CN109346419B (zh) | 2018-12-05 | 2018-12-05 | 半导体器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811479285.6A CN109346419B (zh) | 2018-12-05 | 2018-12-05 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109346419A true CN109346419A (zh) | 2019-02-15 |
CN109346419B CN109346419B (zh) | 2020-11-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811479285.6A Active CN109346419B (zh) | 2018-12-05 | 2018-12-05 | 半导体器件及其制造方法 |
Country Status (1)
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CN (1) | CN109346419B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112530877A (zh) * | 2020-11-30 | 2021-03-19 | 复旦大学 | 临时键合结构 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010046915A (ko) * | 1999-11-16 | 2001-06-15 | 박종섭 | 반도체 소자의 제조 방법 |
CN1373499A (zh) * | 2000-09-29 | 2002-10-09 | 国际商业机器公司 | 使用化学机械抛光精加工用于接合的晶片的装置和方法 |
CN103943491A (zh) * | 2014-04-28 | 2014-07-23 | 华进半导体封装先导技术研发中心有限公司 | 在转接板工艺中采用cmp对基板表面进行平坦化的方法 |
CN104167353A (zh) * | 2014-08-08 | 2014-11-26 | 武汉新芯集成电路制造有限公司 | 键合衬底表面的处理方法 |
CN105047603A (zh) * | 2015-06-24 | 2015-11-11 | 武汉新芯集成电路制造有限公司 | 一种混合键合金属突出界面的处理方法 |
CN107564888A (zh) * | 2016-07-01 | 2018-01-09 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其制造方法 |
US20180286694A1 (en) * | 2017-02-15 | 2018-10-04 | Globalfoundries Singapore Pte. Ltd. | Embedded memory in back-end-of-line low-k dielectric |
-
2018
- 2018-12-05 CN CN201811479285.6A patent/CN109346419B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010046915A (ko) * | 1999-11-16 | 2001-06-15 | 박종섭 | 반도체 소자의 제조 방법 |
CN1373499A (zh) * | 2000-09-29 | 2002-10-09 | 国际商业机器公司 | 使用化学机械抛光精加工用于接合的晶片的装置和方法 |
CN103943491A (zh) * | 2014-04-28 | 2014-07-23 | 华进半导体封装先导技术研发中心有限公司 | 在转接板工艺中采用cmp对基板表面进行平坦化的方法 |
CN104167353A (zh) * | 2014-08-08 | 2014-11-26 | 武汉新芯集成电路制造有限公司 | 键合衬底表面的处理方法 |
CN105047603A (zh) * | 2015-06-24 | 2015-11-11 | 武汉新芯集成电路制造有限公司 | 一种混合键合金属突出界面的处理方法 |
CN107564888A (zh) * | 2016-07-01 | 2018-01-09 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及其制造方法 |
US20180286694A1 (en) * | 2017-02-15 | 2018-10-04 | Globalfoundries Singapore Pte. Ltd. | Embedded memory in back-end-of-line low-k dielectric |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112530877A (zh) * | 2020-11-30 | 2021-03-19 | 复旦大学 | 临时键合结构 |
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CN109346419B (zh) | 2020-11-06 |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20221222 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee after: Huaian Xide Industrial Design Co.,Ltd. Address before: 223300 no.599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240613 Address after: 441700, Group 5, Baiguoshu Village, Chengguan Town, Gucheng County, Xiangyang City, Hubei Province Patentee after: Zhao Dongmei Country or region after: China Address before: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: Huaian Xide Industrial Design Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |
Effective date of registration: 20240625 Address after: 441000 Factory Building of Nongxin Science and Technology Park, Yancheng Street, Yicheng City, Xiangyang City, Hubei Province Patentee after: Xiangyang Baisheng Photoelectric Technology Co.,Ltd. Country or region after: China Address before: 441700, Group 5, Baiguoshu Village, Chengguan Town, Gucheng County, Xiangyang City, Hubei Province Patentee before: Zhao Dongmei Country or region before: China |