CN109309150A - A kind of gallium nitride based LED epitaxial slice and preparation method thereof - Google Patents
A kind of gallium nitride based LED epitaxial slice and preparation method thereof Download PDFInfo
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- CN109309150A CN109309150A CN201810932053.5A CN201810932053A CN109309150A CN 109309150 A CN109309150 A CN 109309150A CN 201810932053 A CN201810932053 A CN 201810932053A CN 109309150 A CN109309150 A CN 109309150A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 202
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 199
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002019 doping agent Substances 0.000 claims description 43
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 238000005215 recombination Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- -1 indium aluminum nitrogen Chemical compound 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.Epitaxial wafer includes that substrate, electronics offer layer, active layer and hole provide layer, electronics provides layer, active layer and hole offer layer and stacks gradually on substrate, it includes n type gallium nitride layer and at least one the p-type gallium nitride layer being inserted in n type gallium nitride layer that electronics, which provides layer, and the thickness of n type gallium nitride layer is greater than 1/2 that electronics provides the thickness of layer.The present invention forms electronics offer layer by being inserted at least one p-type gallium nitride layer in n type gallium nitride layer, p-type gallium nitride layer and n type gallium nitride layer form PN junction, p-type gallium nitride layer and n type gallium nitride layer become space-charge region, existing in space-charge region can be with the free charge of transverse shifting, the ability extending transversely of electronics can be promoted, increase electronics and the extension and transmission of electric current in layer are provided, reduces electronics and the bulk resistor of layer is provided, and then reduce the forward voltage of chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its production
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.LED is widely paid close attention to because having many advantages, such as energy conservation and environmental protection, high reliablity, long service life, is being carried on the back in recent years
Scape light source and field of display screen yield unusually brilliant results, and start to march to domestic lighting market.Since domestic lighting lays particular emphasis on product
Power and energy saving and service life, therefore reduce LED series resistance and improve LED antistatic effect seem particularly critical.
Epitaxial wafer is the primary finished product in LED preparation process.Existing LED epitaxial wafer include substrate, n type semiconductor layer,
Active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer stack gradually on substrate.P-type semiconductor
Layer carries out the hole of recombination luminescence for providing, and n type semiconductor layer is used to provide the electronics for carrying out recombination luminescence, and active layer is used for
The radiation recombination for carrying out electrons and holes shines, and substrate is used to provide growing surface for epitaxial material.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Epitaxial wafer carries out in the positive cartridge chip or flip-chip of chip technology formation, and the electronics in n type semiconductor layer is
It is migrated along the direction vertical with the stacking direction of epitaxial wafer.In order to avoid positive cartridge chip or the forward voltage of flip-chip
Excessively high, n type semiconductor layer would generally be thicker.But it is easy to draw when the N type dopants such as heavily-doped Si in this way in n type semiconductor layer
Enter more defect and impurity, and the defect and impurity being introduced into influences whether the extension of electronics in n type semiconductor layer, leads to electronics
Being unevenly distributed in n type semiconductor layer reduces the luminous efficiency of LED.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and preparation method thereof, it is able to solve existing
There is the problem of technology improves the extended capability of electronics in n type semiconductor layer in the case where not influencing chip forward voltage.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, electronics provides layer, active layer and hole provide layer, and the electronics provides layer, described active
Layer and the hole provide layer and stack gradually over the substrate, and it includes n type gallium nitride layer and insertion that the electronics, which provides layer,
At least one p-type gallium nitride layer in the n type gallium nitride layer, the thickness of the n type gallium nitride layer are greater than the electronics and mention
For the 1/2 of the thickness of layer.
Optionally, each p-type gallium nitride layer with a thickness of 5nm~30nm.
Preferably, the quantity of the p-type gallium nitride layer is 1~20.
It is highly preferred that the electronics provide layer with a thickness of 2 μm~8 μm.
Optionally, the doping concentration of P-type dopant and N-type in the n type gallium nitride layer in each p-type gallium nitride layer
The doping concentration of dopant is identical.
Preferably, the doping concentration of P-type dopant is 10 in each p-type gallium nitride layer18cm-3~1020cm-3, described
The doping concentration of N type dopant is 10 in n type gallium nitride layer18cm-3~1020cm-3。
On the other hand, the embodiment of the invention provides a kind of production method of gallium nitride based LED epitaxial slice, institutes
Stating production method includes:
One substrate is provided；
Successively growth electronics provides layer, active layer and hole and provides layer over the substrate；
Wherein, the electronics provide layer include n type gallium nitride layer and be inserted in the n type gallium nitride layer at least one
A p-type gallium nitride layer, the thickness of the n type gallium nitride layer are greater than 1/2 that the electronics provides the thickness of layer.
Optionally, after growing the p-type gallium nitride layer, the production method further include:
It is handled using surface of the buffered hydrofluoride acid to the p-type gallium nitride layer.
Optionally, the growth conditions of the p-type gallium nitride layer is identical as the growth conditions of the n type gallium nitride layer, described
Growth conditions includes growth temperature and growth pressure.
Preferably, it is 1000 DEG C~1200 DEG C that the electronics, which provides the growth temperature of layer, and the electronics provides the growth of layer
Pressure is 100torr~500torr.
Technical solution provided in an embodiment of the present invention has the benefit that
Electronics offer layer is formed by being inserted at least one p-type gallium nitride layer in n type gallium nitride layer, since N-type nitrogenizes
The thickness of gallium layer is greater than 1/2 that electronics provides the thickness of layer, therefore electronics offer layer can provide recombination luminescence for active layer
Electronics.P-type gallium nitride layer and n type gallium nitride layer form PN junction simultaneously, and p-type gallium nitride layer and n type gallium nitride layer become space electricity
He Qu, the ability extending transversely of electronics can be promoted with the free charge of transverse shifting by existing in space-charge region, increase electricity
Son provides the extension and transmission of electric current in layer, reduces electronics and provides the bulk resistor of layer, and then reduces the forward voltage of chip.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for gallium nitride based LED epitaxial slice that the embodiment of the present invention supplies；
Fig. 2 is that a kind of electronics provided in an embodiment of the present invention provides the structural schematic diagram of layer；
Fig. 3 is that another electronics provided in an embodiment of the present invention provides the structural schematic diagram of layer；
Fig. 4 is that another electronics provided in an embodiment of the present invention provides the structural schematic diagram of layer；
Fig. 5 is that another electronics provided in an embodiment of the present invention provides the structural schematic diagram of layer；
Fig. 6 is a kind of process of the production method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slices.Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram.Referring to Fig. 1, the gallium nitride based LED epitaxial slice
Layer 20, active layer 30 and hole being provided including substrate 10, electronics, layer 40 being provided, electronics provides layer 20, active layer 30 and hole and mentions
It is sequentially laminated on substrate 10 for layer 40.
Fig. 2 provides the structural schematic diagram of layer for a kind of electronics provided in an embodiment of the present invention, and Fig. 3 mentions for the embodiment of the present invention
Another electronics supplied provides the structural schematic diagram of layer, and Fig. 4 provides the knot of layer for another electronics provided in an embodiment of the present invention
Structure schematic diagram, Fig. 5 provide the structural schematic diagram of layer for another electronics provided in an embodiment of the present invention.Referring to fig. 2~Fig. 5,
In the present embodiment, electronics provides at least one P that layer 20 includes n type gallium nitride layer 21 and is inserted in n type gallium nitride layer 21
Type gallium nitride layer 22, the thickness of n type gallium nitride layer 21 are greater than 1/2 that electronics provides the thickness of layer 20.
The embodiment of the present invention forms electronics offer layer by being inserted at least one p-type gallium nitride layer in n type gallium nitride layer,
Since the thickness of n type gallium nitride layer is greater than 1/2 that electronics provides the thickness of layer, electronics provides layer and can provide for active layer
The electronics of recombination luminescence.P-type gallium nitride layer and n type gallium nitride layer form PN junction, p-type gallium nitride layer and n type gallium nitride layer simultaneously
Become space-charge region, the extending transversely of electronics can be promoted with the free charge of transverse shifting by existing in space-charge region
Ability increases electronics and provides the extension and transmission of electric current in layer, reduces electronics and provides the bulk resistor of layer, and then reduces chip just
To voltage.
In practical applications, as shown in Figures 2 and 3, the quantity for the p-type gallium nitride layer 22 being inserted into n type gallium nitride layer 21
It can be one；As shown in Figure 4 and Figure 5, the quantity for the p-type gallium nitride layer 22 being inserted into n type gallium nitride layer 21 may be more
It is a.As shown in Figure 2 and Figure 4, p-type gallium nitride layer 22 can be uniformly inserted in n type gallium nitride layer 21, i.e. p-type gallium nitride layer 22
The thickness of the n type gallium nitride layer 21 of two sides is identical；As shown in Figure 3 and Figure 5, p-type gallium nitride layer 22 can also be optionally plugged into N-type
Any position in gallium nitride layer 21, the i.e. thickness of the n type gallium nitride layer 21 of 22 two sides of p-type gallium nitride layer are different.It needs to illustrate
, the quantity of p-type gallium nitride layer and insertion position are only for example in Fig. 2~Fig. 5, and specific implementation of the invention is not restricted to
This.
Optionally, the thickness of each p-type gallium nitride layer 22 can be 5nm~30nm, preferably 20nm.If p-type nitrogenizes
The thickness of gallium layer is less than 5nm, then may can not cooperatively form PN junction with n type gallium nitride layer since p-type gallium nitride layer is relatively thin, lead
Cause can not effectively promote the ability extending transversely of electronics；If the thickness of p-type gallium nitride layer is greater than 30nm, may be due to p-type
Gallium nitride layer is thicker and compound with the electronics in n type gallium nitride layer, reduces electronics and provides the electron amount that layer injects in active layer,
The final luminous efficiency for reducing LED.
Further, the quantity of p-type gallium nitride layer 22 can be 1~20, preferably 10.If p-type gallium nitride
The quantity of layer is greater than 20, then may be more and compound with the electronics in n type gallium nitride layer due to the quantity of p-type gallium nitride layer,
It reduces electronics and the electron amount that layer injects in active layer, the final luminous efficiency for reducing LED is provided.
Further, it can be 2 μm~8 μm, preferably 5 μm that electronics, which provides the thickness of layer 20,.If electronics provides layer
Thickness less than 2 μm, then it is relatively thin and cause the forward voltage of LED chip higher may to provide layer due to electronics；If electronics mentions
It is greater than 8 μm for the thickness of layer, then may causes the waste of material since electronics offer layer is thicker.
Optionally, the doping concentration of P-type dopant can be with N-type in n type gallium nitride layer 21 in each p-type gallium nitride layer 22
The doping concentration of dopant is identical.
P-type gallium nitride layer and n type gallium nitride layer use identical doping concentration, more simple and convenient in realization.Exist simultaneously
Under identical doping concentration, the electron amount that the number of cavities that P-type dopant provides can be provided much smaller than N type dopant will not
It influences electronics and provides layer to active layer injection electronics.
Specifically, the doping concentration of P-type dopant can be 10 in each p-type gallium nitride layer 2218cm-3~1020cm-3, excellent
It is selected as 1019cm-3.If the doping concentration of P-type dopant is less than 10 in p-type gallium nitride layer18cm-3, then may be nitrogenized due to p-type
The doping concentration of P-type dopant is lower and PN junction can not be cooperatively formed with n type gallium nitride layer in gallium layer, leads to not effectively be promoted
The ability extending transversely of electronics；If the doping concentration of P-type dopant is greater than 10 in p-type gallium nitride layer20cm-3, then may be due to
The doping concentration of P-type dopant is higher and compound with the electronics in n type gallium nitride layer in p-type gallium nitride layer, reduces electronics and provides
Electron amount in layer injection active layer, the final luminous efficiency for reducing LED.
Specifically, the doping concentration of N type dopant can be 10 in n type gallium nitride layer 2118cm-3~1020cm-3, preferably
1019cm-3.If the doping concentration of N type dopant is less than 10 in n type gallium nitride layer18cm-3, then may be due to n type gallium nitride layer
The doping concentration of middle N type dopant is lower and influences electronics offer layer and injects electronics into active layer；If in n type gallium nitride layer
The doping concentration of N type dopant is greater than 1020cm-3, then may be higher due to the doping concentration of N type dopant in n type gallium nitride layer
And the crystal quality of epitaxial wafer entirety is influenced, the final luminous efficiency for reducing LED.
Specifically, the material of substrate 10 can use sapphire (main material is aluminum oxide), as crystal orientation is
[0001] sapphire.Active layer 30 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum are built
Alternately laminated setting；The material of Quantum Well can use InGaN (InGaN), such as InxGa1-xN, 0 < x < 1, what quantum was built
Material can use gallium nitride.The material that hole provides layer 40 can be using the gallium nitride of p-type doping (such as magnesium).
Further, the thickness of Quantum Well can be 3nm~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm
~20nm, preferably 15nm；The quantity of Quantum Well is identical as the quantity that quantum is built, and the quantity that quantum is built can be 5~11,
Preferably 8.The thickness that hole provides layer 40 can be 100nm~500nm, preferably 300nm；Hole provides p-type in layer 40
The doping concentration of dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include buffer layer 51, buffer layer
51 settings provide between layer 20 in substrate 10 and electronics, to alleviate the stress that lattice mismatch generates between substrate material and gallium nitride
And defect, and nuclearing centre is provided for gallium nitride material epitaxial growth.
Specifically, the material of buffer layer 51 can use gallium nitride.
Further, the thickness of buffer layer 51 can be 15nm~40nm, preferably 25nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include undoped gallium nitride layer
52, the setting of undoped gallium nitride layer 52 provides between layer 20 in buffer layer 51 and electronics, further to alleviate substrate material and nitrogen
Change the stress and defect that lattice mismatch generates between gallium, provides crystal quality preferable growing surface for epitaxial wafer main structure.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy first in patterned substrate, because
This is also referred to as low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again, will form multiple mutually independent three
Island structure is tieed up, referred to as three-dimensional nucleating layer；Then it is carried out between each three-dimensional island structure on all three-dimensional island structures
The cross growth of gallium nitride forms two-dimension plane structure, referred to as two-dimentional retrieving layer；The finally high growth temperature one on two-dimensional growth layer
The thicker gallium nitride of layer, referred to as intrinsic gallium nitride layer.By three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride in the present embodiment
Layer is referred to as undoped gallium nitride layer.
Further, the thickness of three-dimensional nucleating layer can be 100nm~600nm, preferably 350nm；Two-dimentional retrieving layer
Thickness can be 500nm~800nm, preferably 650nm；The thickness of intrinsic gallium nitride layer can be 800nm~2 μm, preferably
1.4μm。
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 60, answers
The setting of power releasing layer 60 provides between layer 20 and active layer 30 in electronics, to generate to lattice mismatch between sapphire and gallium nitride
Stress discharged, improve the crystal quality of active layer, be conducive to electrons and holes active layer carry out radiation recombination shine,
The internal quantum efficiency of LED is improved, and then improves the luminous efficiency of LED.
Specifically, the material of stress release layer 60 can use gallium indium aluminum nitrogen (AlInGaN), can be released effectively sapphire
The stress generated with gallium nitride crystal lattice mismatch, improves the crystal quality of epitaxial wafer, improves the luminous efficiency of LED.
Preferably, the molar content of aluminium component can be less than or equal to 0.2, in stress release layer 60 in stress release layer 60
The molar content of indium component can be less than or equal to 0.05, to avoid adverse effect is caused.
Further, the thickness of stress release layer 60 can be 50nm~500nm, preferably 300nm.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 71, electricity
The setting of sub- barrier layer 71 provides between layer 40 in active layer 30 and hole, to avoid electron transition to hole provide in layer with hole
Non-radiative recombination is carried out, the luminous efficiency of LED is reduced.
Specifically, the material of electronic barrier layer 71 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 71 can be 50nm~150nm, preferably 100nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 72, low temperature
P-type layer 72 is arranged between active layer 30 and electronic barrier layer 71, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
Specifically, the material of low temperature P-type layer 72 can be identical for the material that provides layer 40 with hole.In the present embodiment,
The material of low temperature P-type layer 72 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 72 can be 10nm~50nm, preferably 30nm；P in low temperature P-type layer 72
The doping concentration of type dopant can be 1018/cm3~1020/cm3, preferably 1019/cm3。
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include p-type contact layer 80, p-type
The setting of contact layer 80 provides on layer 40 in hole, between the electrode or transparent conductive film that are formed in chip fabrication technique
Form Ohmic contact.
Specifically, the material of p-type contact layer 80 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 80 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 80
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 5*1021/cm3。
A kind of specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer layer
20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate 10
On.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including n type gallium nitride layer 21 and is inserted in N-type nitridation
1 p-type gallium nitride layer 22 in gallium layer 21, p-type gallium nitride layer 22 with a thickness of 30nm, P-type dopant in p-type gallium nitride layer 22
Doping concentration be 1018cm-3, the doping concentration of N type dopant is 10 in n type gallium nitride layer 2118cm-3, electronics offer layer 20
With a thickness of 2 μm；Active layer 30 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3.5nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer
Material uses the gallium nitride of p-type doping, and with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 4 μm, doped with concentration19cm-3
N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improves
1%~2%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer
Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate
On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including n type gallium nitride layer 21 and is inserted in N-type nitrogen
Change 2 p-type gallium nitride layers 22 in gallium layer 21, p-type gallium nitride layer 22 with a thickness of 20nm, p-type doping in p-type gallium nitride layer 22
The doping concentration of agent is 1019cm-3, the doping concentration of N type dopant is 10 in n type gallium nitride layer 2119m-3, electronics offer layer 20
With a thickness of 4 μm；Active layer 30 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3.5nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer
Material uses the gallium nitride of p-type doping, and with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 4 μm, doped with concentration19cm-3
N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improves
2%~3%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer
Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate
On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including n type gallium nitride layer 21 and is inserted in N-type nitrogen
Change 10 p-type gallium nitride layers 22 in gallium layer 21, p-type gallium nitride layer 22 with a thickness of 10nm, p-type is mixed in p-type gallium nitride layer 22
Miscellaneous dose of doping concentration is 1019cm-3, the doping concentration of N type dopant is 10 in n type gallium nitride layer 2119cm-3, electronics offer layer
20 with a thickness of 4 μm；Active layer 30 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well is using nitridation
Indium gallium, Quantum Well with a thickness of 3.5nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer
Material use the gallium nitride of p-type doping, with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 4 μm, doped with concentration19cm-3
N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improves
3%~5%.
Another specific implementation of gallium nitride based LED epitaxial slice shown in FIG. 1 includes: substrate 10, electronics offer
Layer 20, active layer 30 and hole provide layer 40, and electronics provides layer 20, active layer 30 and hole offer layer 40 and is sequentially laminated on substrate
On 10.Wherein, the material of substrate 10 uses sapphire；Electronics provides layer 20 including n type gallium nitride layer 21 and is inserted in N-type nitrogen
Change 20 p-type gallium nitride layers 22 in gallium layer 21, p-type gallium nitride layer 22 with a thickness of 5nm, p-type doping in p-type gallium nitride layer 22
The doping concentration of agent is 1020cm-3, the doping concentration of N type dopant is 10 in n type gallium nitride layer 2120cm-3, electronics offer layer 20
With a thickness of 8 μm；Active layer 30 includes that alternately stacked 8 Quantum Well and 8 quantum are built, and the material of Quantum Well uses indium nitride
Gallium, Quantum Well with a thickness of 3.5nm, the material that quantum is built uses gallium nitride, quantum build with a thickness of 15nm；Hole provides layer
Material uses the gallium nitride of p-type doping, and with a thickness of 300nm, the doping concentration of P-type dopant is 1019cm-3。
Chip is made in above-mentioned epitaxial wafer, providing layer by one with electronics is 10 with a thickness of 4 μm, doped with concentration19cm-3
N type dopant GaN layer composition and the identical epitaxial wafer of other layers of structure made of chip compare, luminous efficiency improves
3%~4%.
The embodiment of the invention provides a kind of production methods of gallium nitride based LED epitaxial slice, are suitable for production figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 6 is a kind of gallium nitride based light emitting diode provided in an embodiment of the present invention
The flow chart of the production method of epitaxial wafer, referring to Fig. 6, which includes:
Step 201: a substrate is provided.
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), in hydrogen atmosphere to substrate carry out 1 minute~
It makes annealing treatment within 10 minutes (preferably 5 minutes)；
Nitrogen treatment is carried out to substrate.
The surface for cleaning substrate through the above steps avoids being conducive to the life for improving epitaxial wafer in impurity incorporation epitaxial wafer
Long quality.
Step 202: successively growth electronics provides layer, active layer and hole and provides layer on substrate.
In the present embodiment, electronics provide layer include n type gallium nitride layer and be inserted in n type gallium nitride layer at least one
A p-type gallium nitride layer, the thickness of n type gallium nitride layer are greater than 1/2 that electronics provides the thickness of layer.
Optionally, the growth conditions of p-type gallium nitride layer can be identical as the growth conditions of n type gallium nitride layer, growth conditions
Including growth temperature and growth pressure.Using identical growth conditions, relatively simple convenience is realized.
Specifically, it can be 1000 DEG C~1200 DEG C that electronics, which provides the growth temperature of layer, and electronics provides the growth pressure of layer
It can be 100torr~500torr.It matches electronics and the growth temperature and growth pressure of layer is provided, it is preferable to obtain growth quality
Electronics provides layer.
Optionally, after growing P-type gallium nitride layer, which can also include:
Using buffered hydrofluoride acid (English: buffered hydrofluoride acid, abbreviation: BHF) to p-type
The surface of gallium nitride layer is handled.
By being handled, can be removed using surface of the BHF to p-type gallium nitride layer after the growth of p-type gallium nitride layer
The P-type dopant (such as magnesium elements) of p-type gallium nitride layer surface enrichment, avoids P-type dopant from diffusing into the N-type nitrogen of subsequent growth
Change in gallium layer.
Preferably, the handling duration of BHF can be 5min~30min, preferably 15min.If the handling duration of BHF is small
In 5min, then the magnesium elements of p-type gallium nitride layer surface enrichment can not may be effectively removed since the handling duration of BHF is shorter；
If the handling duration of BHF is greater than 30min, the magnesium in p-type gallium nitride layer may be caused since the handling duration of BHF is longer
Element is lower, so that p-type gallium nitride layer can not provide greater number of free charge, and then influences electric current and provides in layer in electronics
It is extending transversely.
Specifically, the temperature of BHF can for 20 DEG C~40 DEG C, preferably room temperature, such as 25 DEG C, to reduce cost of implementation.Such as
The temperature of fruit BHF then may cause the processing speed of BHF slower less than 20 DEG C since the temperature of BHF is lower, influence growth effect
Rate；If the temperature of BHF is greater than 40 DEG C, the processing speed of BHF may be caused to hand over fastly since the temperature of BHF is higher, come not
And stop processing of the BHF to p-type gallium nitride layer in time.
Specifically, which may include:
The first step, controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure is 100torr~500torr
(preferably 300torr) grows electronics on substrate and provides layer；
Second step provides in electronics and grows active layer on layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~829 DEG C
(preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 850 DEG C~
959 DEG C (preferably 900 DEG C), pressure is 100torr~500torr (preferably 300torr)；
Third step, controlled at 850 DEG C~1000 DEG C (preferably 900 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), hole is grown on active layer, and layer is provided.
Optionally, before the first step, which can also include:
Grown buffer layer on substrate.
Correspondingly, electronics provides layer growth on the buffer layer.
Specifically, grown buffer layer on substrate may include:
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure be 400torr~600torr (preferably
500torr), grown buffer layer on substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 400torr~600torr (preferably
500torr), the in-situ annealing carried out 5 minutes~10 minutes (preferably 8 minutes) to buffer layer is handled.
Preferably, on substrate after grown buffer layer, which can also include:
Undoped gallium nitride layer is grown on the buffer layer.
Correspondingly, electronics provides layer and is grown on undoped gallium nitride layer.
Specifically, undoped gallium nitride layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~600torr (preferably
300torr), growing three-dimensional nucleating layer, growth time are 10min~20min on the buffer layer；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), two-dimentional retrieving layer is grown on three-dimensional nucleating layer, growth time is 10min~20min, growth time 20min
~40min；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure be 100torr~500torr (preferably
300torr), intrinsic gallium nitride layer is grown in two-dimentional retrieving layer.
Optionally, before second step, which can also include:
Growth stress releasing layer on layer is provided in electronics.
Correspondingly, active layer is grown on stress release layer.
Specifically, growth stress releasing layer on layer is provided in electronics, may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), growth stress releasing layer on layer is provided in electronics.
Optionally, before third step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, hole provides layer and is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 850 DEG C~1000 DEG C (preferably 900 DEG C), pressure be 100torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 600 DEG C~850 DEG C (preferably 750 DEG C), pressure be 100torr~600torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after third step, which can also include:
Growing P-type contact layer on layer is provided in hole.
Specifically, growing P-type contact layer on layer is provided in hole, may include:
Controlled at 850 DEG C~1050 DEG C (preferably 950 DEG C), pressure be 100torr~300torr (preferably
200torr), growing P-type contact layer on layer is provided in hole.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, electronics
Layer, active layer and hole are provided, layer is provided, the electronics provides layer, the active layer and hole offer layer and is sequentially laminated on
On the substrate, which is characterized in that the electronics provides layer and includes n type gallium nitride layer and be inserted in the n type gallium nitride layer
In at least one p-type gallium nitride layer, the thickness of the n type gallium nitride layer is greater than 1/2 that the electronics provides the thickness of layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that each p-type nitridation
Gallium layer with a thickness of 5nm~30nm.
3. gallium nitride based LED epitaxial slice according to claim 2, which is characterized in that the p-type gallium nitride layer
Quantity be 1~20.
4. gallium nitride based LED epitaxial slice according to claim 3, which is characterized in that the electronics provides layer
With a thickness of 2 μm~8 μm.
5. gallium nitride based LED epitaxial slice according to any one of claims 1 to 4, which is characterized in that Mei Gesuo
It is identical as the doping concentration of N type dopant in the n type gallium nitride layer to state the doping concentration of P-type dopant in p-type gallium nitride layer.
6. gallium nitride based LED epitaxial slice according to claim 5, which is characterized in that each p-type nitridation
The doping concentration of P-type dopant is 10 in gallium layer18cm-3~1020cm-3, the doping of N type dopant is dense in the n type gallium nitride layer
Degree is 1018cm-3~1020cm-3。
7. a kind of production method of gallium nitride based LED epitaxial slice, which is characterized in that the production method includes:
One substrate is provided；
Successively growth electronics provides layer, active layer and hole and provides layer over the substrate；
Wherein, the electronics provides at least one P that layer includes n type gallium nitride layer and is inserted in the n type gallium nitride layer
Type gallium nitride layer, the thickness of the n type gallium nitride layer are greater than 1/2 that the electronics provides the thickness of layer.
8. production method according to claim 7, which is characterized in that after growing the p-type gallium nitride layer, the system
Make method further include:
It is handled using surface of the buffered hydrofluoride acid to the p-type gallium nitride layer.
9. production method according to claim 7 or 8, which is characterized in that the growth conditions of the p-type gallium nitride layer and institute
The growth conditions for stating n type gallium nitride layer is identical, and the growth conditions includes growth temperature and growth pressure.
10. manufacturing method according to claim 9, which is characterized in that the growth temperature that the electronics provides layer is 1000
DEG C~1200 DEG C, the growth pressure that the electronics provides layer is 100torr~500torr.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987198A (en) * | 2020-08-31 | 2020-11-24 | 西安电子科技大学 | GaN-based transverse structure light-emitting diode based on Fe doping and manufacturing method |
| CN112802933A (en) * | 2021-02-04 | 2021-05-14 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN113097359A (en) * | 2021-03-29 | 2021-07-09 | 厦门士兰明镓化合物半导体有限公司 | Semiconductor light emitting element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066176A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Nitride semiconductor light emitting device |
| CN103811610A (en) * | 2014-03-11 | 2014-05-21 | 中国科学院半导体研究所 | Light emitting device inserted with current homogenizing structure and manufacturing method thereof |
| CN106098887A (en) * | 2016-08-26 | 2016-11-09 | 广东德力光电有限公司 | A kind of ultraviolet epitaxial slice structure |
-
2018
- 2018-08-16 CN CN201810932053.5A patent/CN109309150B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103066176A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Nitride semiconductor light emitting device |
| CN103811610A (en) * | 2014-03-11 | 2014-05-21 | 中国科学院半导体研究所 | Light emitting device inserted with current homogenizing structure and manufacturing method thereof |
| CN106098887A (en) * | 2016-08-26 | 2016-11-09 | 广东德力光电有限公司 | A kind of ultraviolet epitaxial slice structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987198A (en) * | 2020-08-31 | 2020-11-24 | 西安电子科技大学 | GaN-based transverse structure light-emitting diode based on Fe doping and manufacturing method |
| CN112802933A (en) * | 2021-02-04 | 2021-05-14 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN112802933B (en) * | 2021-02-04 | 2022-05-13 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN113097359A (en) * | 2021-03-29 | 2021-07-09 | 厦门士兰明镓化合物半导体有限公司 | Semiconductor light emitting element |
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