CN109301422B - Half-mode substrate integrated waveguide-based filtering power divider - Google Patents
Half-mode substrate integrated waveguide-based filtering power divider Download PDFInfo
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- CN109301422B CN109301422B CN201811005023.6A CN201811005023A CN109301422B CN 109301422 B CN109301422 B CN 109301422B CN 201811005023 A CN201811005023 A CN 201811005023A CN 109301422 B CN109301422 B CN 109301422B
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention provides a filtering power divider based on a half-mode substrate integrated waveguide, which takes a substrate integrated waveguide rectangular cavity and a half-mode substrate integrated waveguide rectangular cavity as basic resonance units, wherein adjacent rectangular cavities realize magnetic coupling through windowing, S-shaped grooves are formed to realize electric coupling, a bridging isolation resistor is arranged between openings of rectangular cavities of a second-order half-mode substrate integrated waveguide, a groove line is arranged at a position corresponding to the opening of a lower surface metal conducting layer, and an input end and an output end adopt a microstrip line-coplanar waveguide structure. The substrate integrated waveguide rectangular cavity comprises a dielectric substrate, wherein the upper surface and the lower surface of the dielectric substrate are respectively covered with a metal conducting layer, and metal through holes penetrating through the upper metal conducting layer and the lower metal conducting layer are uniformly distributed on the dielectric substrate along the edge of the cavity; the half-mode substrate integrated waveguide rectangular cavity is obtained by dividing the substrate integrated waveguide rectangular cavity along the magnetic wall. The invention has compact structure and improves the isolation characteristic and out-of-band rejection performance of the filtering power divider.
Description
Technical Field
The invention relates to a microwave passive device technology, in particular to a filtering power divider based on a half-mode substrate integrated waveguide.
Background
With the development of microwave and millimeter wave technologies, modern communication systems have made higher demands on the size of integrated circuits, and the integration and miniaturization of microwave elements have become a research hotspot and trend in recent years. Both filters and power splitters are important components of microwave communication systems. In the process of pursuing miniaturization, the filter and the power divider are fused together, so that the circuit size can be reduced, the processing cost can be reduced, the insertion loss can be reduced, and the trend of the development of modern integrated circuits is met.
The substrate integrated waveguide is a novel microwave millimeter wave transmission structure proposed in recent years, which has the advantages of high quality factor, low loss, small volume, light weight, easy integration of microstrip lines and the like, and can realize high-performance integrated microwave millimeter wave devices, so that more and more articles related to substrate integrated waveguide power dividers are published. For example, document 1(Wang, x., and Zhu, x.w.: a' Quarter-mode cavity integrated waveguide filtering power divider with a via-cavity, electron.lett.,2017,53, (6), pp.434-436) proposes a filter power divider based on a substrate integrated waveguide circular cavity, but the power divider does not consider the isolation characteristics of the filter, thus limiting the practical application of the filter power divider.
Disclosure of Invention
The invention aims to provide a filtering power divider based on a half-mode substrate integrated waveguide.
The technical solution for realizing the invention is as follows: a filter power divider based on a half-mode substrate integrated waveguide comprises a basic resonance unit and an input and output structure, wherein the basic resonance unit is composed of a substrate integrated waveguide rectangular cavity and a half-mode substrate integrated waveguide rectangular cavity, and the basic resonance unit is composed of the substrate integrated waveguide rectangular cavity and the half-mode substrate integrated waveguide rectangular cavity and specifically comprises the following components: the first-order substrate integrated waveguide rectangular cavity, the second-order half-die substrate integrated waveguide rectangular cavity, the third-order half-die substrate integrated waveguide rectangular cavity and the fourth-order half-die substrate integrated waveguide rectangular cavity are arranged in a symmetrical mode relative to the center line of the long side of the first-order substrate integrated waveguide rectangular cavity, the second-order half-die substrate integrated waveguide rectangular cavity is arranged below the first-order substrate integrated waveguide rectangular cavity, the fourth-order half-die substrate integrated waveguide rectangular cavity is arranged on the left side and the right side of the first-order substrate integrated waveguide rectangular cavity, the third-order half-die substrate integrated waveguide rectangular cavity is arranged below the fourth-order half-die substrate integrated waveguide rectangular cavity, the first-order substrate integrated waveguide rectangular cavity is connected with the second-order half-die substrate integrated waveguide rectangular cavity through an open coupling window c1, the second-order half-die substrate integrated waveguide rectangular cavity is connected with the third-order half-die substrate integrated waveguide rectangular cavity through an open coupling window c2, the third-order half-die substrate integrated waveguide rectangular cavity is connected with the fourth-order half-die substrate integrated waveguide rectangular cavity through a coupling window c3, and the fourth-order half-die substrate integrated waveguide rectangular cavity is connected with the I-order substrate integrated waveguide rectangular cavity through an S-shaped groove; the input and output structure is a microstrip line-coplanar waveguide structure and comprises a signal input microstrip line and a signal output microstrip line, the signal input microstrip line is coupled with the I-order substrate integrated waveguide rectangular cavity at the center of the long edge of the I-order substrate integrated waveguide rectangular cavity through a slot line, and the IV-order half-mode substrate integrated waveguide rectangular cavity is coupled with one end of the signal output microstrip line through the slot line.
Preferably, the substrate integrated waveguide rectangular cavity comprises a dielectric substrate, wherein the upper surface and the lower surface of the dielectric substrate are both covered with metal conducting layers, and metal through holes penetrating through the upper metal conducting layer and the lower metal conducting layer are uniformly distributed on the dielectric substrate along the edge of the cavity; the half-mode substrate integrated waveguide rectangular cavity is obtained by dividing the substrate integrated waveguide rectangular cavity along the magnetic wall.
Preferably, an isolation resistor is bridged between the rectangular cavity openings of the two second-order half-mode substrate integrated waveguides, and slot lines are arranged at the positions, corresponding to the openings, of the lower surface metal conducting layer.
Preferably, the signal input microstrip line and the signal output microstrip line both adopt 50 ohm microstrip lines.
Preferably, the position of the output port, the lengths of the input port coupling slot line and the output port coupling slot line are determined according to the external quality factor of the filter power divider, and the positions and the sizes of the coupling windows c1, c2, c3 and the S-shaped slot can be determined by the coupling coefficients between the I-order substrate integrated waveguide rectangular cavity and the II-order half-die substrate integrated waveguide rectangular cavity, the II-order half-die substrate integrated waveguide rectangular cavity and the III-order half-die substrate integrated waveguide rectangular cavity, the III-order half-die substrate integrated waveguide rectangular cavity and the IV-order half-die substrate integrated waveguide rectangular cavity, and the I-order substrate integrated waveguide rectangular cavity and the IV-order half-die substrate integrated waveguide rectangular cavity, respectively.
Compared with the prior art, the invention has the following remarkable advantages: 1) the invention adopts the half-mode substrate integrated waveguide to design the filtering power divider, and has the characteristics of small volume, low loss, high quality factor and easy integration; 2) the invention adopts the mode of bridging a resistor at the opening of the half-mode substrate integrated waveguide and arranging a slot line at the corresponding position of the lower surface metal conducting layer and the opening, thereby improving the isolation characteristic of the filter power divider; 3) the invention adopts a cross coupling mode to introduce two transmission zeros, thereby improving the selection characteristic of the filtering power divider.
The present invention is described in further detail below with reference to the attached drawings.
Drawings
FIG. 1 is a top level layout of the present invention.
FIG. 2 is the underlying layout of the present invention.
FIG. 3 is a schematic diagram of a top level layout with dimension designations of the present invention.
FIG. 4 is a schematic diagram of the underlying layout with dimension labels of the present invention.
Fig. 5 is a three-dimensional schematic of the present invention.
Fig. 6 is a schematic diagram of a simulation curve of the frequency response of the filtering power divider in the embodiment.
Detailed Description
The invention is further described with reference to the following figures and examples.
A filter power divider based on a half-mode substrate integrated waveguide comprises a basic resonance unit and an input and output structure, wherein the basic resonance unit is composed of a substrate integrated waveguide rectangular cavity and a half-mode substrate integrated waveguide rectangular cavity, and the basic resonance unit is composed of the substrate integrated waveguide rectangular cavity and the half-mode substrate integrated waveguide rectangular cavity and specifically comprises the following components: a first-order substrate integrated waveguide rectangular cavity I, a second-order half-die substrate integrated waveguide rectangular cavity II, a third-order half-die substrate integrated waveguide rectangular cavity III and a fourth-order half-die substrate integrated waveguide rectangular cavity IV, wherein the basic resonance units are symmetrically distributed about the long-edge central line of the first-order substrate integrated waveguide rectangular cavity I, the second-order half-die substrate integrated waveguide rectangular cavity II is positioned below the first-order substrate integrated waveguide rectangular cavity I, the fourth-order half-die substrate integrated waveguide rectangular cavity IV is positioned at the left side and the right side of the first-order substrate integrated waveguide rectangular cavity I, the third-order half-die substrate integrated waveguide rectangular is positioned below the fourth-order half-die substrate integrated waveguide rectangular cavity IV, the first-order substrate integrated waveguide rectangular cavity I is connected with the second-order half-die substrate integrated waveguide rectangular cavity II through an open coupling window c1, the second-order half-die substrate integrated waveguide rectangular cavity is connected with the third-die substrate integrated waveguide rectangular cavity III through an open coupling window c2, the third-order half-die substrate integrated waveguide rectangular cavity is connected with the fourth-order half-die substrate integrated waveguide rectangular cavity IV through a coupling window c3, and the fourth-order half-die substrate integrated waveguide rectangular cavity IV is connected with the I-order substrate integrated waveguide rectangular cavity I through an S-shaped groove 2; the input and output structure is a microstrip line-coplanar waveguide structure and comprises a signal input microstrip line 6 and a signal output microstrip line 7, the signal input microstrip line 6 is coupled with the I-th-order substrate integrated waveguide rectangular cavity I through a slot line s1 at the center of the long edge of the I-th-order substrate integrated waveguide rectangular cavity I, and the IV-th-order half-mode substrate integrated waveguide rectangular cavity IV is coupled with one end of the signal output microstrip line 7 through a slot line s 2.
In a further embodiment, the substrate integrated waveguide rectangular cavity comprises a dielectric substrate 8, wherein the upper surface and the lower surface of the dielectric substrate are both covered with metal conducting layers 9, and metal through holes 1 penetrating through the upper metal conducting layer and the lower metal conducting layer are uniformly distributed on the dielectric substrate along the edge of the cavity; the half-mode substrate integrated waveguide rectangular cavity is obtained by dividing the substrate integrated waveguide rectangular cavity along the magnetic wall.
In a further embodiment, an isolation resistor 3 is bridged between two openings II of the rectangular cavity of the second-order half-mode substrate integrated waveguide, and a slot line 5 is arranged at a position corresponding to the opening of the lower surface metal conducting layer 9.
In a further embodiment, the signal input microstrip line 6 and the signal output microstrip line 7 both adopt 50 ohm microstrip lines.
In a further embodiment, the position of the output port and the lengths of the input port coupling slot line S1 and the output port coupling slot line S2 are determined according to the external quality factor of the filter power divider, and the positions and the sizes of the coupling windows c1, c2, c3 and the S-shaped slot 2 can be determined by the coupling coefficients between the first-order substrate integrated waveguide rectangular cavity I and the second-order half-die substrate integrated waveguide rectangular cavity ii, the second-order half-die substrate integrated waveguide rectangular cavity ii and the third-order half-die substrate integrated waveguide rectangular cavity iii, the third-order half-die substrate integrated waveguide rectangular cavity iii and the fourth-order half-die substrate integrated waveguide rectangular cavity iv) and the first-order substrate integrated waveguide rectangular cavity I and the fourth-order half-die substrate integrated waveguide rectangular cavity iv), respectively.
Example 1
As shown in fig. 1, fig. 2, and fig. 5, a half-mode substrate integrated waveguide-based filter power divider includes a basic resonance unit formed by a substrate integrated waveguide rectangular cavity and a half-mode substrate integrated waveguide rectangular cavity, and an input/output structure.
Wherein the substrate integrated waveguide rectangular cavity comprises a medium with upper and lower surfaces covered with metal conductive layers 9A mass substrate 8, wherein metal through holes 1 penetrating through the upper metal conducting layer and the lower metal conducting layer are uniformly distributed on the medium substrate along the edge of the cavity, the diameter of each metal through hole is 0.5mm, and the distance between the holes is 1 mm; the half-mode substrate integrated waveguide rectangular cavity is obtained by dividing the substrate integrated waveguide rectangular cavity along the magnetic wall. The basic resonance unit formed by the substrate integrated waveguide rectangular cavity and the half-mode substrate integrated waveguide rectangular cavity specifically comprises: the first-order substrate integrated waveguide rectangular cavity, the second-order half-mode substrate integrated waveguide rectangular cavity, the third-order half-mode substrate integrated waveguide rectangular cavity and the fourth-order half-mode substrate integrated waveguide rectangular cavity. The basic resonance units are symmetrically distributed about the center line of the I-order substrate integrated waveguide rectangular cavity, the II-order half-mode substrate integrated waveguide rectangular cavity is positioned below the I-order substrate integrated waveguide rectangular cavity, the IV-order half-mode substrate integrated waveguide rectangular cavity is positioned on the left side and the right side of the I-order substrate integrated waveguide rectangular cavity, and the III-order half-mode substrate integrated waveguide rectangular is positioned below the IV-order half-mode substrate integrated waveguide rectangular cavity. The I-order substrate integrated waveguide rectangular cavity is connected with the II-order half-mode substrate integrated waveguide rectangular cavity through a coupling window c1, the II-order half-mode substrate integrated waveguide rectangular cavity is connected with the III-order half-mode substrate integrated waveguide rectangular cavity through a coupling window c2, the III-order half-mode substrate integrated waveguide rectangular cavity is connected with the IV-order half-mode substrate integrated waveguide rectangular cavity through a coupling window c3, and the IV-order half-mode substrate integrated waveguide rectangular cavity is connected with the I-order substrate integrated waveguide rectangular cavity through an S-shaped groove 2. The input and output structure is a microstrip line-coplanar waveguide structure, the signal input microstrip line 6 and the signal output microstrip line 7 both adopt 50 ohm microstrip lines, and the width w of the microstrip linesmsThe thickness of the cavity is 1.6mm, the signal input microstrip line 6 is coupled with the I-order substrate integrated waveguide rectangular cavity through a slot line s1 at the center of the long edge of the I-order substrate integrated waveguide rectangular cavity, and the IV-order half-mode substrate integrated waveguide rectangular cavity is coupled with one end of the signal output microstrip line 7 through a slot line s 2.
An isolation resistor 8 is bridged between openings of the rectangular cavity of the second-order half-mode substrate integrated waveguide, and the distance t from the isolation resistor 8 to the edge of the rectangular cavityr6mm, resistance value of 500 omega, and a metal conductive layer 9 on the lower surface corresponding to the openingWith a slot line 5 of length lgIs 10mm, width wgIs 0.6mm, and improves the isolation characteristic of the output port of the filtering power divider.
S-shaped grooves 2 are formed in the upper metal surface and the lower metal surface between the IV-step half-module rectangular cavity and the I-step rectangular cavity, and the diameter D of the inner ring of each S-shaped groove 212.1mm, outer ring diameter D2The diameter is 2.35mm, a pair of metalized through holes 4 is arranged to realize electric coupling, two transmission zeros are arranged out of band by adopting a cross coupling mode, and the out-of-band rejection performance of the filtering power divider is improved.
As shown in fig. 3 and 4, the positions of the port 2 and the port 3 of the filtering power divider and the lengths of the input port coupling slot line s1 and the output port coupling slot line s2 may be determined by external quality factors, and the distance w between the center of the output microstrip line and the center of the input microstrip lineo17mm, length l of slot line s1s1Is 4mm, width ws10.5mm, slot line s2 length lsIs 5mm, width wsIs 0.5 mm; the positions and sizes of the coupling windows c1, c2, c3 and the S-shaped groove 2 can be determined by the coupling coefficients between the resonators of I and II, II and III, III and IV and I and IV respectively, and the width w of the coupling window c1c12.5mm, distance t from the edge of the order I rectangular cavityc1Is 6mm, width w of coupling window c2c2Is 4mm, and is at a distance t from the edge of the second order rectangular cavityc22.5mm, coupling window c3, distance t from the edge of the III-th order rectangular cavityc3Is 8.15 mm.
The dielectric substrate material of the filtering power divider is selected from Rogers RT5880, and the relative dielectric constant epsilonr2.2, a loss tangent tan theta of 0.0009 and a thickness h of 0.508 mm.
In this embodiment, the specific size of the filtering power divider is as follows: i order rectangular cavity wide side length w1Is 20mm, and the second half-mode rectangular cavity wide side length w29.7mm, the wide side length w of the rectangular cavity of the third-order half die3Is 10mm, the fourth half-mode has a rectangular cavity with a wide side length w4Is 10mm, and the length l of the long side of the fourth-order rectangular cavity is 10 mm. The overall planar dimensions include input and output microstrip lines 56mm 34 mm.
As shown in fig. 6, the center frequency of the filter power divider is 10.7GHz, the bandwidth is 0.8GHz, the insertion loss S21 is 4.3dB, and S31 is 4.3 dB; the isolation in the pass band reaches more than 20dB, the cut-off edge of the pass band is steep, and two transmission zeros exist at frequency points of 9.85GHz and 10.75 GHz.
Claims (4)
1. The filtering power divider based on the half-mode substrate integrated waveguide is characterized by comprising a basic resonance unit and an input and output structure, wherein the basic resonance unit is composed of a substrate integrated waveguide rectangular cavity and a half-mode substrate integrated waveguide rectangular cavity, and the basic resonance unit composed of the substrate integrated waveguide rectangular cavity and the half-mode substrate integrated waveguide rectangular cavity specifically comprises: the first-order substrate integrated waveguide rectangular cavity (I), the second-order half-mode substrate integrated waveguide rectangular cavity (II), the third-order half-mode substrate integrated waveguide rectangular cavity (III) and the fourth-order half-mode substrate integrated waveguide rectangular cavity (IV), wherein the basic resonance units are symmetrically distributed about the central line of the long edge of the first-order substrate integrated waveguide rectangular cavity (I), the second-order half-mode substrate integrated waveguide rectangular cavity (II) is positioned below the first-order substrate integrated waveguide rectangular cavity (I), the fourth-order half-mode substrate integrated waveguide rectangular cavity (IV) is positioned at the left side and the right side of the first-order substrate integrated waveguide rectangular cavity (I), the third-order half-mode substrate integrated waveguide rectangular is positioned below the fourth-order half-mode substrate integrated waveguide rectangular cavity (IV), the first-order substrate integrated waveguide rectangular cavity (I) is connected with the second-order half-mode substrate integrated waveguide rectangular cavity (II) through an open coupling window c1, the second-order half-die substrate integrated waveguide rectangular cavity (II) is connected with the third-order half-die substrate integrated waveguide rectangular cavity (III) through a coupling window c2, the third-order half-die substrate integrated waveguide rectangular cavity (III) is connected with the fourth-order half-die substrate integrated waveguide rectangular cavity (IV) through a coupling window c3, and the fourth-order half-die substrate integrated waveguide rectangular cavity (IV) is connected with the I-order substrate integrated waveguide rectangular cavity (I) through an S-shaped groove (2); the input and output structure is a microstrip line-coplanar waveguide structure and comprises a signal input microstrip line (6) and a signal output microstrip line (7), the signal input microstrip line (6) is coupled with the I-order substrate integrated waveguide rectangular cavity (I) through an input port coupling slot line (s1) at the center of the long edge of the I-order substrate integrated waveguide rectangular cavity (I), and a IV-order half-mode substrate integrated waveguide rectangular cavity (IV) is coupled with one end of the signal output microstrip line (7) through an output port coupling slot line (s 2); an isolation resistor (3) is bridged between the openings of the rectangular cavities (II) of the two II-order half-mode substrate integrated waveguides, and a groove line (5) is arranged at the position, corresponding to the opening, of the lower surface metal conducting layer (9).
2. The filtering power divider based on the half-mode substrate integrated waveguide as claimed in claim 1, wherein the substrate integrated waveguide rectangular cavity comprises a dielectric substrate (8) with upper and lower surfaces covered with metal conductive layers (9), and metal through holes (1) penetrating through the upper and lower metal conductive layers are uniformly distributed on the dielectric substrate along the edge of the cavity; the half-mode substrate integrated waveguide rectangular cavity is obtained by dividing the substrate integrated waveguide rectangular cavity along the magnetic wall.
3. The half-mode substrate integrated waveguide-based filtering power divider as claimed in claim 1, wherein the signal input microstrip line (6) and the signal output microstrip line (7) are both 50 ohm microstrip lines.
4. The half-mold substrate integrated waveguide-based filtering power divider of claim 1, wherein the position of the output port and the lengths of the input port coupling slot line (s1) and the output port coupling slot line (s2) are determined according to an external quality factor of the filtering power divider, the positions and the sizes of the coupling windows c1, c2, c3 and the S-shaped groove (2) can be respectively determined by coupling coefficients between a rectangular cavity (I) of an I-order substrate integrated waveguide and a rectangular cavity (II) of a II-order half-mode substrate integrated waveguide, a rectangular cavity (II) of a II-order half-mode substrate integrated waveguide and a rectangular cavity (III) of a III-order half-mode substrate integrated waveguide, a rectangular cavity (III) of a III-order half-mode substrate integrated waveguide and a rectangular cavity (IV) of a IV-order half-mode substrate integrated waveguide, and a rectangular cavity (I) of the I-order substrate integrated waveguide and a rectangular cavity (IV) of the IV-order half-mode substrate integrated waveguide.
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| CN110350278B (en) * | 2019-07-15 | 2022-01-11 | 电子科技大学 | Substrate integrated waveguide power divider with third-order band-pass response |
| CN113113751B (en) * | 2021-04-13 | 2022-03-04 | 南通大学 | Balanced filtering power divider for self-isolation substrate integrated waveguide |
| CN113193323B (en) * | 2021-05-04 | 2021-10-29 | 南通大学 | Half-mode substrate integrated waveguide-based four-way unequal power division filtering power divider |
| CN114171866B (en) * | 2021-11-17 | 2023-06-02 | 西安电子科技大学重庆集成电路创新研究院 | Glass-based ultra-wide stop band microwave filter and duplexer |
| CN114171876B (en) * | 2021-11-17 | 2023-02-28 | 西安电子科技大学重庆集成电路创新研究院 | Ka-band wide-stop-band filtering power divider |
| CN116315553B (en) * | 2023-04-10 | 2024-04-12 | 电子科技大学 | Transition structure suitable for substrate integrated waveguide-microstrip |
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| US10177430B2 (en) * | 2014-05-16 | 2019-01-08 | City University Of Hong Kong | Apparatus and a method for electromagnetic signal transition |
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