CN109269656B - Novel temperature measuring method based on vanadium dioxide gradient film sensor - Google Patents
Novel temperature measuring method based on vanadium dioxide gradient film sensor Download PDFInfo
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- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 title claims abstract description 126
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 29
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000005520 cutting process Methods 0.000 claims abstract description 23
- 238000005259 measurement Methods 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 140
- 230000007704 transition Effects 0.000 claims description 39
- 238000009529 body temperature measurement Methods 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 13
- 238000005459 micromachining Methods 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 16
- 230000008859 change Effects 0.000 abstract description 11
- 239000012212 insulator Substances 0.000 abstract description 4
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 101100008046 Caenorhabditis elegans cut-2 gene Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
Abstract
The invention discloses a novel temperature measuring method based on a vanadium dioxide gradient film sensor, which comprises the following steps: 1) preparing a vanadium dioxide film: growing a vanadium dioxide film with the thickness of 0-100nm in the 001 or 110 direction on a TiO2 single crystal substrate; 2) selecting a vanadium dioxide film sample; 3) cutting a vanadium dioxide film sample; 4) preparing a break-make; 5) and (4) measuring the temperature. The invention provides a novel temperature measuring method based on a vanadium dioxide gradient film sensor, which not only can utilize a novel material phase change mechanism to finish high-precision measurement of the temperature near a room temperature region, but also can utilize the phase change characteristic (metal-insulator phase change) of a novel material to directly obtain the digital signal quantity of the corresponding temperature.
Description
Technical Field
The invention relates to the technical field of sensor temperature measurement, in particular to a novel temperature measurement method based on a vanadium dioxide gradient film sensor.
Background
There are three general types of temperature sensors or measurement techniques, one is a metal type temperature sensor represented by Pt100 and other materials, one is a temperature sensor based on a semiconductor thermistor, and the other is a metal thermocouple sensor composed of different materials.
Various temperature sensors or technologies have respective advantages and disadvantages: such as Pt100 temperature sensor, it has the advantages of convenient manufacture, simple use in a certain temperature range and wide application range. The principle is that the temperature is measured through the characteristic that the resistance of the temperature-measuring resistor monotonically increases with the temperature rise, the temperature coefficient is positive, but the relationship between the resistance of the temperature-measuring resistor and the temperature change is not completely linear, so that an auxiliary standard division table is required for temperature calibration. The core of the temperature sensor is measurement of device resistance, and an external circuit is required to provide a constant current source, so that when the temperature sensor is used, on one hand, the temperature of the device is required to be prevented from being influenced by Joule heat generated by overlarge current, and on the other hand, voltage correspondingly generated by the overlarge current is small, so that the temperature sensor is not easy to measure and is greatly interfered by the outside.
The semiconductor type thermistor generally has a negative temperature coefficient, and its principle is that the resistance of a semiconductor material decreases as the temperature increases, and the change in resistance characteristics with temperature is generally an exponential relationship. This has the advantage that the temperature sensitivity is high, but also because of this property the low temperature region becomes less measurable due in part to the exponential increase in resistance. In addition, the semiconductor material often has high requirements on doping conditions, device size and the like, so that the production process of the temperature sensor is relatively complex.
The principle of the thermocouple temperature sensor is that the temperature is measured by using a node thermoelectric potential formed by two different materials, and the thermocouple temperature sensor has the advantages that the thermocouple temperature sensor is not limited by the shape and the size of the materials and is wide in a high-temperature measuring area. The Seebeck coefficient of the thermocouple material is 5-40 μ V/K, and the signal is weak, so that the thermocouple material is not very suitable for measuring the temperature near room temperature.
In view of the above, the invention provides a novel temperature measurement method based on a vanadium dioxide gradient thin film sensor, which not only can utilize a novel material phase transition mechanism to finish high-precision measurement of the temperature near a room temperature region, but also can utilize the phase transition characteristic (metal-insulator phase transition) of a novel material to directly obtain the digital signal quantity of the corresponding temperature.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention provides a novel temperature measuring method based on a vanadium dioxide gradient film sensor, which not only can utilize a novel material phase change mechanism to finish high-precision measurement of the temperature near a room temperature zone, but also can utilize the phase change characteristic (metal-insulator phase change) of a novel material to directly obtain the digital signal quantity of the corresponding temperature.
In order to solve the technical problems, the invention provides a novel temperature measuring method based on a vanadium dioxide gradient film sensor, which comprises the following steps:
1) preparing a vanadium dioxide film:
in TiO2Growth in the 001 or 110 direction on a single crystal substrateA vanadium dioxide film with the thickness of 0-100 nm;
2) selecting a vanadium dioxide film sample:
selecting a vanadium dioxide film with the thickness of 1-80nm from the vanadium dioxide film with the thickness of 0-100nm prepared in the step 1) as a vanadium dioxide film sample; in TiO2Along the 001 or 110 direction on the single crystal substrate, when the thickness of the vanadium dioxide film reaches 80nm, the phase transition temperature T of the vanadium dioxide filmMIReaches 343K, and the phase transition temperature T of the vanadium dioxide film is 1nm when the thickness of the vanadium dioxide film isMIIs 308K, namely the phase transition temperature T of the vanadium dioxide film sampleMI308K-343K;
3) cutting a vanadium dioxide film sample:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology 7128 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 128 in turn along the 001 or 110 direction on the single crystal substrate;
4) preparing an on-off switch:
independently leading out an electrode on each small film area separated in the step 3) to form an independent on-off switch; when the temperature reaches the self phase transition temperature T of the on-off switchMIWhen the temperature is lower than the self phase-change temperature T of the on-off switch, the on-off switch is turned on and is regarded as a digital signal 1MIIf so, disconnecting the circuit and regarding the circuit as a digital signal 0;
5) measurement of temperature:
phase transition temperature T of each of 128 small film regionsMIThe temperature range is different and is within the range of 308K-343K, namely the temperature range of 308K-343K, 35 ℃ in total is decomposed into 128 equal parts, and a temperature sensor with 7-bit resolution is obtained; during temperature measurement, the on-off of the electrodes is measured sequentially from the region 1 to the region 128, and when the first time between the electrodes of the region n and the region n +1 is off, i.e. the digital signal is 0, the current temperature is 308+ n (343-) - (308)/(128) K.
Further, the method comprises the following steps of 1) preparing a vanadium dioxide film:
deposition by laser pulses (PLD) method, in which the displacement of the PLD sample stage is controlled2A vanadium dioxide film with the thickness of 0-100nm is grown on the single crystal substrate along the 001 or 110 direction.
Further, the method comprises the following steps of 1) preparing a vanadium dioxide film:
by controlling the CVD gas flow in a Chemical Vapor Deposition (CVD) process on TiO2A vanadium dioxide film with the thickness of 0-100nm is grown on the single crystal substrate along the 001 or 110 direction.
Further, the step 3) of cutting the vanadium dioxide film sample:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology1665536 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 65536 in turn in the 001 or 110 direction on the single crystal substrate.
Further, the invention 65536 small film regions each have its own phase transition temperature TMIIs different and is in the range of 308K-343K, namely the temperature interval of 308K-343K and 35 ℃ is decomposed into 65536 equal parts, namely a 16-bit resolution temperature sensor is obtained.
The invention has the beneficial effects that: the invention provides a novel temperature measuring method based on a vanadium dioxide gradient film sensor aiming at the defects of a common temperature sensor, which not only can utilize a novel material phase change mechanism to finish high-precision measurement of the temperature near a room temperature zone, but also can utilize the phase change characteristic (metal-insulator phase change) of a novel material to directly obtain the digital signal quantity of the corresponding temperature. The invention converts the temperature interval into the correspondence of the separated thin films, has stable temperature, avoids the measurement of larger or smaller resistance, has simple and easily realized measuring circuit and is easier to convert into digital quantity. Meanwhile, the measuring method is little affected by self error, good in consistency, strong in expansibility, free of strict requirements for the size of the sensor, easy to realize in the level of as small as 10 microns or as large as 10cm, capable of changing the micro-processing technology and increasing the resolution of the sensor, for example, if the vanadium dioxide film is divided into 216-65536 blocks, the resolution of the sensor is changed into 16 bits, for example, a temperature region of 35 ℃, the resolution can reach 35/65536-0.000534 ℃, and the measuring method has great practicability, popularization value and the like.
Drawings
FIG. 1 is a schematic diagram of a gradient of a TiO2(001) substrate-based vanadium dioxide thin film sample;
FIG. 2 vanadium dioxide film sample surface cut 27A 128-piece schematic of the small membrane area.
Detailed Description
The following embodiments of the present invention will be described in detail with reference to the accompanying examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented.
It should be noted that, in order to save the written space of the specification and avoid unnecessary repetition and waste, the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
Example 1 a novel temperature measurement method based on a vanadium dioxide gradient thin film sensor,
the novel temperature measuring method based on the vanadium dioxide gradient film sensor comprises the following steps:
1) preparing a vanadium dioxide film:
by laser pulse deposition (PLD) method, by controlling PLD sample stage displacement2Growing a vanadium dioxide film with the thickness of 0-100nm grade on the single crystal substrate along the 001 direction;
2) selecting a vanadium dioxide film sample:
as shown in figure 1, selecting a vanadium dioxide film with the thickness of 1-80nm from the vanadium dioxide film with the thickness of 0-100nm grade prepared in the step 1) as a vanadium dioxide film sample; in TiO2Along the 001 direction on the single crystal substrate, when the thickness of the vanadium dioxide film reaches 80nm, the phase transition temperature T of the vanadium dioxide filmMIReaches 343K, and the phase transition temperature T of the vanadium dioxide film is 1nm when the thickness of the vanadium dioxide film isMIIs 308K, namely the phase transition temperature T of the vanadium dioxide film sampleMIIs 308K-343K；
3) Cutting a vanadium dioxide film sample:
as shown in fig. 2, a whole block of the surface of the vanadium dioxide film sample selected in the step 2) is cut into 2 by using a micromachining technology 7128 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 128 in turn along the 001 direction on the single crystal substrate;
4) preparing an on-off switch:
independently leading out an electrode on each small film area separated in the step 3) to form an independent on-off switch; when the temperature reaches the self phase transition temperature T of the on-off switchMIWhen the temperature is lower than the self phase-change temperature T of the on-off switch, the on-off switch is turned on and is regarded as a digital signal 1MIIf so, disconnecting the circuit and regarding the circuit as a digital signal 0;
5) measurement of temperature:
phase transition temperature T of each of 128 small film regionsMIThe temperature range is different and is within the range of 308K-343K, namely the temperature range of 308K-343K, 35 ℃ in total is decomposed into 128 equal parts, and a temperature sensor with 7-bit resolution is obtained; during temperature measurement, the on-off of the electrodes is measured sequentially from the region 1 to the region 128, and when the first time between the electrodes of the region n and the region n +1 is off, i.e. the digital signal is 0, the current temperature is 308+ n (343-) - (308)/(128) K.
As a preferred scheme of the invention, the step 3) of cutting the vanadium dioxide film sample comprises the following steps:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology1665536 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 65536 in turn in the 001 direction on the single crystal substrate.
As a preferred scheme of the invention, the phase transition temperature T of each block of the 65536 small film areas is self-containedMIIs different and is in the range of 308K-343K, namely 308K-343K, the temperature interval of 35 ℃ is decomposed into 65536 and the likeAnd obtaining the 16-bit temperature sensor.
The novel temperature measuring method based on the vanadium dioxide gradient film sensor comprises the following steps:
1) preparing a vanadium dioxide film:
by laser pulse deposition (PLD) method, by controlling PLD sample stage displacement2Growing a vanadium dioxide film with the thickness of 0-100nm grade on the single crystal substrate along the 001 direction;
2) selecting a vanadium dioxide film sample:
selecting a vanadium dioxide film with the thickness of 1-80nm from the vanadium dioxide film with the thickness of 0-100nm prepared in the step 1) as a vanadium dioxide film sample; in TiO2Along the 110 direction on the single crystal substrate, when the thickness of the vanadium dioxide film reaches 80nm, the phase transition temperature T of the vanadium dioxide filmMIReaches 343K, and the phase transition temperature T of the vanadium dioxide film is 1nm when the thickness of the vanadium dioxide film isMIIs 308K, namely the phase transition temperature T of the vanadium dioxide film sampleMI308K-343K;
3) cutting a vanadium dioxide film sample:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology 7128 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2, a region n +1, a region 128 in turn along the 110 direction on the single crystal substrate;
4) preparing an on-off switch:
independently leading out an electrode on each small film area separated in the step 3) to form an independent on-off switch; when the temperature reaches the self phase transition temperature T of the on-off switchMIWhen the temperature is lower than the self phase-change temperature T of the on-off switch, the on-off switch is turned on and is regarded as a digital signal 1MIIf so, disconnecting the circuit and regarding the circuit as a digital signal 0;
5) measurement of temperature:
phase transition temperature T of each of 128 small film regionsMIAre different, andthe temperature range is in the range of 308K-343K, namely the temperature range of 308K-343K at 35 ℃ is decomposed into 128 equal parts, and a temperature sensor with 7-bit resolution is obtained; during temperature measurement, the on-off of the electrodes is measured sequentially from the region 1 to the region 128, and when the first time between the electrodes of the region n and the region n +1 is off, i.e. the digital signal is 0, the current temperature is 308+ n (343-) - (308)/(128) K.
As a preferred scheme of the invention, the step 3) of cutting the vanadium dioxide film sample comprises the following steps:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology1665536 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 65536 in turn in the 001 direction on the single crystal substrate.
As a preferred scheme of the invention, the phase transition temperature T of each block of the 65536 small film areas is self-containedMIIs different and is in the range of 308K-343K, namely the temperature interval of 308K-343K and 35 ℃ is decomposed into 65536 equal parts, namely a 16-bit resolution temperature sensor is obtained.
The novel temperature measuring method based on the vanadium dioxide gradient film sensor comprises the following steps:
1) preparing a vanadium dioxide film:
by controlling the CVD gas flow in a Chemical Vapor Deposition (CVD) process on TiO2A vanadium dioxide film with the thickness of 0-100nm is grown on the single crystal substrate along the 001 direction.
2) Selecting a vanadium dioxide film sample:
as shown in figure 1, selecting a vanadium dioxide film with the thickness of 1-80nm from the vanadium dioxide film with the thickness of 0-100nm grade prepared in the step 1) as a vanadium dioxide film sample; in TiO2Along the 001 direction on the single crystal substrate, when the thickness of the vanadium dioxide film reaches 80nm, the phase transition temperature T of the vanadium dioxide filmMIReaches 343K, when the thickness of the vanadium dioxide film is 1nmTemperature T of phase transition thereofMIIs 308K, namely the phase transition temperature T of the vanadium dioxide film sampleMI308K-343K;
3) cutting a vanadium dioxide film sample:
as shown in fig. 2, a whole block of the surface of the vanadium dioxide film sample selected in the step 2) is cut into 2 by using a micromachining technology 7128 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 128 in turn along the 001 direction on the single crystal substrate;
4) preparing an on-off switch:
independently leading out an electrode on each small film area separated in the step 3) to form an independent on-off switch; when the temperature reaches the self phase transition temperature T of the on-off switchMIWhen the temperature is lower than the self phase-change temperature T of the on-off switch, the on-off switch is turned on and is regarded as a digital signal 1MIIf so, disconnecting the circuit and regarding the circuit as a digital signal 0;
5) measurement of temperature:
phase transition temperature T of each of 128 small film regionsMIThe temperature range is different and is within the range of 308K-343K, namely the temperature range of 308K-343K, 35 ℃ in total is decomposed into 128 equal parts, and a temperature sensor with 7-bit resolution is obtained; during temperature measurement, the on-off of the electrodes is measured sequentially from the region 1 to the region 128, and when the first time between the electrodes of the region n and the region n +1 is off, i.e. the digital signal is 0, the current temperature is 308+ n (343-) - (308)/(128) K.
As a preferred scheme of the invention, the step 3) of cutting the vanadium dioxide film sample comprises the following steps:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology1665536 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 65536 in turn in the 001 or 110 direction on the single crystal substrate.
As a preferred scheme of the invention, the phase transition temperature T of each block of the 65536 small film areas is self-containedMIIs different in that it is a mixture of,and the temperature range is in the range of 308K-343K, namely the temperature range of 308K-343K, 35 ℃ is decomposed into 65536 equal parts, and a 16-bit resolution temperature sensor is obtained.
The novel temperature measuring method based on the vanadium dioxide gradient film sensor comprises the following steps:
1) preparing a vanadium dioxide film:
by controlling the CVD gas flow in a Chemical Vapor Deposition (CVD) process on TiO2A vanadium dioxide film with the thickness of 0-100nm is grown on the single crystal substrate along the 110 direction.
2) Selecting a vanadium dioxide film sample:
selecting a vanadium dioxide film with the thickness of 1-80nm from the vanadium dioxide film with the thickness of 0-100nm prepared in the step 1) as a vanadium dioxide film sample; in TiO2Along the 110 direction on the single crystal substrate, when the thickness of the vanadium dioxide film reaches 80nm, the phase transition temperature T of the vanadium dioxide filmMIReaches 343K, and the phase transition temperature T of the vanadium dioxide film is 1nm when the thickness of the vanadium dioxide film isMIIs 308K, namely the phase transition temperature T of the vanadium dioxide film sampleMI308K-343K;
3) cutting a vanadium dioxide film sample:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology 7128 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2, a region n +1, a region 128 in turn along the 110 direction on the single crystal substrate;
4) preparing an on-off switch:
independently leading out an electrode on each small film area separated in the step 3) to form an independent on-off switch; when the temperature reaches the self phase transition temperature T of the on-off switchMIWhen the temperature is lower than the self phase-change temperature T of the on-off switch, the on-off switch is turned on and is regarded as a digital signal 1MIIf so, disconnecting the circuit and regarding the circuit as a digital signal 0;
5) measurement of temperature:
phase transition temperature T of each of 128 small film regionsMIThe temperature range is different and is within the range of 308K-343K, namely the temperature range of 308K-343K, 35 ℃ in total is decomposed into 128 equal parts, and a temperature sensor with 7-bit resolution is obtained; during temperature measurement, the on-off of the electrodes is measured sequentially from the region 1 to the region 128, and when the first time between the electrodes of the region n and the region n +1 is off, i.e. the digital signal is 0, the current temperature is 308+ n (343-) - (308)/(128) K.
As a preferred scheme of the invention, the step 3) of cutting the vanadium dioxide film sample comprises the following steps:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology1665536 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 65536 in turn in the 001 or 110 direction on the single crystal substrate.
As a preferred scheme of the invention, the phase transition temperature T of each block of the 65536 small film areas is self-containedMIIs different and is in the range of 308K-343K, namely the temperature interval of 308K-343K and 35 ℃ is decomposed into 65536 equal parts, namely a 16-bit resolution temperature sensor is obtained.
All of the above mentioned intellectual property rights are not intended to be restrictive to other forms of implementing the new and/or new products. Those skilled in the art will take advantage of this important information, and the foregoing will be modified to achieve similar performance. However, all modifications or alterations are based on the new products of the invention and belong to the reserved rights.
Claims (5)
1. The novel temperature measuring method based on the vanadium dioxide gradient film sensor is characterized by comprising the following steps of: the method comprises the following steps:
1) preparing a vanadium dioxide film:
in TiO2Growing a vanadium dioxide film with the thickness of 0-100nm grade on the single crystal substrate along the 001 or 110 direction;
2) selecting a vanadium dioxide film sample:
selecting a vanadium dioxide film with the thickness of 1-80nm from the vanadium dioxide film with the thickness of 0-100nm prepared in the step 1) as a vanadium dioxide film sample; in TiO2Along the 001 or 110 direction on the single crystal substrate, when the thickness of the vanadium dioxide film reaches 80nm, the phase transition temperature T of the vanadium dioxide filmMIReaches 343K, and the phase transition temperature T of the vanadium dioxide film is 1nm when the thickness of the vanadium dioxide film isMIIs 308K, namely the phase transition temperature T of the vanadium dioxide film sampleMI308K-343K;
3) cutting a vanadium dioxide film sample:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology7128 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 128 in turn along the 001 or 110 direction on the single crystal substrate;
4) preparing an on-off switch:
independently leading out an electrode on each small film area separated in the step 3) to form an independent on-off switch; when the temperature reaches the self phase transition temperature T of the on-off switchMIWhen the temperature is lower than the self phase-change temperature T of the on-off switch, the on-off switch is conducted and defined as a digital signal 1MIIf so, disconnecting the circuit and defining the circuit as a digital signal 0;
5) measurement of temperature:
phase transition temperature T of each of 128 small film regionsMIThe temperature range is different and is within the range of 308K-343K, namely the temperature range of 308K-343K, 35 ℃ in total is decomposed into 128 equal parts, and a temperature sensor with 7-bit resolution is obtained; during temperature measurement, the on-off of the electrodes is measured sequentially from the region 1 to the region 128, and when the first time between the electrodes of the region n and the region n +1 is off, i.e. the digital signal is 0, the current temperature is 308+ n (343-) - (308)/(128) K.
2. The novel temperature measurement method based on vanadium dioxide gradient thin film sensor according to claim 1, characterized in that: step 1) preparing a vanadium dioxide film:
by usingLaser pulse deposition (PLD) method, in which the displacement of PLD sample stage is controlled2A vanadium dioxide film with the thickness of 0-100nm is grown on the single crystal substrate along the 001 or 110 direction.
3. The novel temperature measurement method based on vanadium dioxide gradient thin film sensor according to claim 1, characterized in that: step 1) preparing a vanadium dioxide film:
by controlling CVD gas flow in TiO by CVD method2A vanadium dioxide film with the thickness of 0-100nm is grown on the single crystal substrate along the 001 or 110 direction.
4. The novel temperature measurement method based on vanadium dioxide gradient thin film sensor according to claim 1, characterized in that: step 3) cutting a vanadium dioxide film sample:
cutting the surface of a whole block of the vanadium dioxide film sample selected in the step 2) into 2 by utilizing a micromachining technology1665536 separate small membrane regions; in TiO2Each small film region is set as a region 1, a region 2,. a region n, a region n +1,. a region 65536 in turn in the 001 or 110 direction on the single crystal substrate.
5. The novel temperature measurement method based on vanadium dioxide gradient thin film sensor according to claim 4, characterized in that: 65536 phase transition temperature T of each small film regionMIIs different and is in the range of 308K-343K, namely the temperature interval of 308K-343K and 35 ℃ is decomposed into 65536 equal parts, namely a 16-bit resolution temperature sensor is obtained.
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