CN109256448A - A kind of LED light moulding process - Google Patents
A kind of LED light moulding process Download PDFInfo
- Publication number
- CN109256448A CN109256448A CN201810890428.6A CN201810890428A CN109256448A CN 109256448 A CN109256448 A CN 109256448A CN 201810890428 A CN201810890428 A CN 201810890428A CN 109256448 A CN109256448 A CN 109256448A
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- China
- Prior art keywords
- chip
- ceramic substrate
- led light
- silica gel
- moulding process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000000465 moulding Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000919 ceramic Substances 0.000 claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000741 silica gel Substances 0.000 claims abstract description 41
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 41
- 239000003292 glue Substances 0.000 claims abstract description 22
- 238000005538 encapsulation Methods 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 230000006835 compression Effects 0.000 claims abstract description 4
- 238000007906 compression Methods 0.000 claims abstract description 4
- 230000009977 dual effect Effects 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 241000282832 Camelidae Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of LED light moulding process, comprising the following steps: attachment chip: chip is mounted on ceramic substrate, and the counter electrode of the electrode of chip and ceramic substrate is electrically connected；Injecting glue encapsulation: the one side of chip, the fluorescence silica gel layer of production package chip are pasted on ceramic substrate using mould top machine；Wherein, the step of making fluorescence silica gel layer includes: the position that the type chamber alignment ceramic substrate of mould top machine is pasted with to chip, it is directed at rear mold top machine and compresses ceramic substrate, the past intracavitary injection fluorescence silica gel of type after compression successively carries out pyrosol, pressure maintaining, cooling after injecting fluorescence silica gel；Die sinking molding: making fluorescence silica gel layer and ceramic substrate be detached from mould top machine after cooling, forms LED light.A kind of LED light manufacture craft of the invention, can improve the waterproof performance of LED light, to prolong its service life.
Description
Technical field
The present invention relates to a kind of packaging manufacturing process more particularly to a kind of LED light moulding process.
Background technique
Currently, LED light source has energy-saving and environmental protection, the good, stable luminescence of colour rendering etc. as a kind of semiconductive luminescent materials
Advantage will gradually substitute conventional light source compared with other light sources with its green, efficient, reliable, durable advantage.LED street lamp is
Multiple high-power LED light source combinations, and plane lattice formal distribution is used, secondary optics are carried out by external lens or reflector
Light distribution controls the distribution of light, and the light of sending becomes a strip light belt and is distributed along road surface, meets the need of road lighting
It asks；However, its internal easy water inlet of existing LED light, and cause its service life shorter.
Summary of the invention
For overcome the deficiencies in the prior art, it the purpose of the present invention is to provide a kind of LED light manufacture craft, can improve
The waterproof performance of LED light, to prolong its service life.
The purpose of the present invention adopts the following technical scheme that realization:
A kind of LED light moulding process, comprising the following steps:
Attachment chip: chip is mounted on ceramic substrate, and by pair of the electrode of the chip and the ceramic substrate
Electrode is answered to be electrically connected；
Injecting glue encapsulation: being pasted with the one side of the chip using mould top machine on the ceramic substrate, makes described in package
The fluorescence silica gel layer of chip；Wherein, the step of making the fluorescence silica gel layer includes: that the type chamber of mould top machine is directed at ceramic substrate
It is pasted with the position of chip, alignment rear mold top machine compresses ceramic substrate, and the past intracavitary injection fluorescence silica gel of type after compression injects fluorescence
Pyrosol, pressure maintaining, cooling are successively carried out after silica gel；
Die sinking molding: making fluorescence silica gel layer and ceramic substrate be detached from mould top machine after cooling, forms LED light.
Further, the LED light moulding process further include:
Before mounting chip step, ceramic substrate is divided into multiple chips and mounts area；
In attachment chip step, the chip is mounted respectively in each chip attachment area；
Multiple type chambers are set on the machine of mould top, in injecting glue encapsulation step, multiple type chambers are aligned one by one more
A chip mounts area；
After the completion of being opened forming step, ceramic substrate is cut, each chip attachment area's separation is formed single
A LED light.
Further, attachment chip step in, toward ceramic substrate on point go up conductive glue, chip is placed on conduction later
It completes for chip to be mounted on chip on glue；And the conductive glue is made to be separately connected the electrode of chip and pair of ceramic substrate
Answer electrode.
Further, in attachment chip step, the electrode and ceramic substrate of the chip are respectively welded at using bonding wire
Counter electrode on.
Further, before injecting glue encapsulation step, by the pocket machining of mould top machine at double hump shape shape.
Further, the ratio between length, width and height processed to the size of the type chamber, and make the type chamber are (2.8-
3.0): (1.6-1.8): 1.
It further, is (3.5-5) mm × 5.0mm by the dimensioned of the ceramic substrate.
Compared with prior art, the beneficial effects of the present invention are:
The present invention makes ceramic substrate and fluorescence silica gel layer injection molding, ceramic substrate and fluorescence silica gel by using mould top machine
Layer has preferable adhesiveness between the two, under the injection pressure effect of mould top machine, so that ceramic substrate and fluorescence silica gel layer
High adhesion, and water is avoided to enter chip position from the two junction, furthermore, the relatively existing wick of fluorescence silica gel layer
PPA layers have preferable waterproof performance, can further avoid water through fluorescence silica gel layer and carry out chip position, pass through above-mentioned two
Layer waterproof and improve the waterproof performance of LED light, extend the service life of LED light.
Detailed description of the invention
Fig. 1 is the flow chart of LED light moulding process of the present invention；
Fig. 2 is the structural schematic diagram of LED light of the present invention；
Fig. 3 is the top view of LED light of the present invention.
In figure: 10, fluorescence silica gel layer；20, ceramic substrate；30, chip.
Specific embodiment
In the following, being described further in conjunction with attached drawing and specific embodiment to the present invention, it should be noted that not
Under the premise of conflicting, new implementation can be formed between various embodiments described below or between each technical characteristic in any combination
Example.
A kind of LED light moulding process as shown in Figure 1, comprising the following steps:
Attachment chip 30: chip 30 is mounted on ceramics substantially, and by the electrode of chip 30 and the ceramic substrate 20
Counter electrode be electrically connected；At this point, when the electrode of ceramic substrate 20 is powered, it can be achieved that the energization of chip 30, and makes chip
30 shine；
Injecting glue encapsulation: the one side of the chip 30 is pasted on the ceramic substrate 20 using mould top machine, production includes
The fluorescence silica gel layer 10 of the chip 30 completes the encapsulation of chip 30；Wherein, the step of making fluorescence silica gel layer 10 packet
It includes: the type chamber alignment ceramic substrate 20 of mould top machine is pasted with to the position of the chip 30, alignment rear mold top machine compresses the ceramics
Substrate 20, toward the intracavitary injection fluorescence silica gel of type after compression, the intracavitary fluorescence silica gel of carry out type is fallen on ceramic substrate 20 at this time；Note
Pyrosol is carried out after entering fluorescence silica gel, so that type intracavitary molding of the silica gel in mould top machine, pressure maintaining later, it is ensured that in fluorescence silica gel
It is pressed on ceramic substrate 20, is finally cooled down, make fluorescence silica gel cooling and shaping, form fluorescence silica gel layer 10；
Die sinking molding: making fluorescence silica gel layer 10 and ceramic substrate 20 be detached from mould top machine after cooling, i.e. acquisition LED light.
In above-mentioned moulding process, make 10 injection molding of ceramic substrate 20 and fluorescence silica gel layer by using mould top machine, ceramics
Substrate 20 and fluorescence silica gel layer 10 have preferable adhesiveness between the two, under the injection pressure effect of mould top machine, so that pottery
Porcelain substrate 20 and 10 high adhesion of fluorescence silica gel layer, and water is avoided to enter 30 position of chip from the two junction, furthermore, it is glimmering
The PPA layer of the relatively existing wick of light layer of silica gel 10 has preferable waterproof performance, can further avoid water through fluorescence silica gel layer 10
30 position of chip is carried out, the waterproof performance of LED light is improved by above-mentioned two layers of waterproof, extends the service life of LED light.
In order to improve producing efficiency, it is preferable that the LED light moulding process further include:, will before mounting 30 step of chip
Ceramic substrate 20 is divided into multiple chips 30 and mounts area；In attachment 30 step of chip, area is mounted in each chip 30 and is distinguished
Mount the chip 30；Multiple type chambers are set on the machine of mould top, in injecting glue encapsulation step, one by one by multiple type chambers
It is directed at multiple chips 30 and mounts area, it later can be simultaneously toward the intracavitary injection fluorescence silica gel of multiple types；It is complete in die sinking forming step
Cheng Hou cuts ceramic substrate 20, by each chip 30 attachment area's separation, forms single led lamp；In this way, multiple crystalline substances
Piece 30 carries out injecting glue encapsulation simultaneously, saves the time of injecting glue encapsulation, and improves efficiency.
Specifically, following implementation, embodiment party can be used in the electric connection between above-mentioned ceramic substrate 20 and chip 30
Formula one: attachment 30 step of chip in, toward ceramic substrate 20 on point go up conductive glue, chip 30 is placed in conductive glue later
Chip 30 is mounted on chip 30 by completion；And the conductive glue is made to be separately connected the electrode and ceramic substrate 20 of chip 30
Counter electrode；In this way, electric current enters the electrode of chip 30 by conductive glue after the electrode of ceramic substrate 20 is powered, realize
The energization of chip 30.
Embodiment two: in attachment 30 step of chip, the electrode and pottery of the chip 30 are respectively welded at using bonding wire
On the counter electrode of porcelain substrate 20；In this way, electric current enters the electricity of chip 30 by bonding wire after the electrode of ceramic substrate 20 is powered
The energization of chip 30 is realized in pole.
As Figure 2-3, further, before injecting glue encapsulation step, by the pocket machining of mould top machine at double hump shape shape,
In this way, the fluorescence silica gel layer 10 after molding is also in dual hump shape, due to the scattering of the fluorescence silica gel layer 10 of dual hump shape
It acts on and expands irradiation zone, the irradiation behaviour of the LED light is made to be greatly improved.As shown in figure 3, the LED light is along double camels
The lateral light emitting angle at peak can effectively solve the problem of irradiating limited extent in commercial lighting, do not need up to 130-150 °
Separately match reflective mirror.
Preferably, the ratio between length, width and height processed to the size of the type chamber, and make the type chamber are (2.8-3.0):
(1.6-1.8): 1, in this way, the ratio between length, width and height of fluorescence silica gel layer 10 after molding are (2.8-3.0): (1.6-1.8): 1, at this
Fluorescence silica gel layer 10 under size has preferable scattering and preferable encapsulation function.
It further, is (3.5-5) mm × 5.0mm by the dimensioned of the ceramic substrate 20.
The above embodiment is only the preferred embodiment of the present invention, and the scope of protection of the present invention is not limited thereto,
The variation and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed range.
Claims (7)
1. a kind of LED light moulding process, characterized by comprising:
Attachment chip: chip is mounted on ceramic substrate, and the electrode of the chip is corresponding with the ceramic substrate electric
Pole is electrically connected；
Injecting glue encapsulation: being pasted with the one side of the chip using mould top machine on the ceramic substrate, and the chip is wrapped up in production
Fluorescence silica gel layer；Wherein, the step of making the fluorescence silica gel layer includes: by the type chamber alignment ceramic substrate attachment of mould top machine
There is the position of chip, alignment rear mold top machine compresses ceramic substrate, and the past intracavitary injection fluorescence silica gel of type after compression injects fluorescence silica gel
Pyrosol, pressure maintaining, cooling are successively carried out afterwards；
Die sinking molding: making fluorescence silica gel layer and ceramic substrate be detached from mould top machine after cooling, forms LED light.
2. LED light moulding process as described in claim 1, it is characterised in that: the LED light moulding process further include:
Before mounting chip step, ceramic substrate is divided into multiple chips and mounts area；
In attachment chip step, the chip is mounted respectively in each chip attachment area；
Multiple type chambers are set on the machine of mould top, in injecting glue encapsulation step, multiple type chambers are directed at multiple institutes one by one
State chip attachment area；
After the completion of being opened forming step, ceramic substrate is cut, each chip attachment area's separation is formed single
LED light.
3. LED light moulding process as described in claim 1, it is characterised in that: in attachment chip step, toward on ceramic substrate
Chip is placed on completes for chip to be mounted on chip in conductive glue later by conductive glue on point；And make the conductive glue
It is separately connected the electrode of chip and the counter electrode of ceramic substrate.
4. LED light moulding process as described in claim 1, it is characterised in that: in attachment chip step, distinguished using bonding wire
It is welded on the electrode of the chip and the counter electrode of ceramic substrate.
5. LED light moulding process as described in claim 1, it is characterised in that: before injecting glue encapsulation step, by the type of mould top machine
Chamber is processed into dual hump shape.
6. LED light moulding process as claimed in claim 5, it is characterised in that: process, and make to the size of the type chamber
The ratio between length, width and height of the type chamber are (2.8-3.0): (1.6-1.8): 1.
7. LED light moulding process as described in claim 1, it is characterised in that: the dimensioned by the ceramic substrate is
(3.5-5)mm×5.0mm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810890428.6A CN109256448A (en) | 2018-08-07 | 2018-08-07 | A kind of LED light moulding process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810890428.6A CN109256448A (en) | 2018-08-07 | 2018-08-07 | A kind of LED light moulding process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109256448A true CN109256448A (en) | 2019-01-22 |
Family
ID=65048804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810890428.6A Pending CN109256448A (en) | 2018-08-07 | 2018-08-07 | A kind of LED light moulding process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109256448A (en) |
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|---|---|---|---|---|
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| US20080298063A1 (en) * | 2007-05-31 | 2008-12-04 | Nichia Corporation | Light emitting apparatus, resin molding device composing light emitting device, method for producing the same |
| CN101707230A (en) * | 2009-10-13 | 2010-05-12 | 中外合资江苏稳润光电有限公司 | Method for manufacturing high-power white light LED |
| CN102011952A (en) * | 2009-09-04 | 2011-04-13 | 佛山市国星光电股份有限公司 | Method for making LED (Light Emitting Diode) light resource module and product made by the method |
| CN102916006A (en) * | 2012-11-06 | 2013-02-06 | 广州市添鑫光电有限公司 | Integrated high-power LED (Light Emitting Diode) light source with more than two convex mirrors and manufacturing process thereof |
| CN204905298U (en) * | 2015-07-10 | 2015-12-23 | 深圳市晶瓷光电有限公司 | Integrated mould top light source of LED |
| CN105895786A (en) * | 2016-05-29 | 2016-08-24 | 廖振连 | LED liquid silicone mold ejecting machine and technological process thereof |
| CN107256921A (en) * | 2017-05-27 | 2017-10-17 | 深圳雷曼光电科技股份有限公司 | COB LED encapsulation methods, display device and lighting device |
| CN107919427A (en) * | 2012-01-20 | 2018-04-17 | 日亚化学工业株式会社 | Light-emitting device is with being packaged into body and used its light-emitting device |
-
2018
- 2018-08-07 CN CN201810890428.6A patent/CN109256448A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080298063A1 (en) * | 2007-05-31 | 2008-12-04 | Nichia Corporation | Light emitting apparatus, resin molding device composing light emitting device, method for producing the same |
| CN101162750A (en) * | 2007-11-26 | 2008-04-16 | 佛山市国星光电股份有限公司 | Power LED with glue-filling formed bottom and manufacturing method thereof |
| CN102011952A (en) * | 2009-09-04 | 2011-04-13 | 佛山市国星光电股份有限公司 | Method for making LED (Light Emitting Diode) light resource module and product made by the method |
| CN101707230A (en) * | 2009-10-13 | 2010-05-12 | 中外合资江苏稳润光电有限公司 | Method for manufacturing high-power white light LED |
| CN107919427A (en) * | 2012-01-20 | 2018-04-17 | 日亚化学工业株式会社 | Light-emitting device is with being packaged into body and used its light-emitting device |
| CN102916006A (en) * | 2012-11-06 | 2013-02-06 | 广州市添鑫光电有限公司 | Integrated high-power LED (Light Emitting Diode) light source with more than two convex mirrors and manufacturing process thereof |
| CN204905298U (en) * | 2015-07-10 | 2015-12-23 | 深圳市晶瓷光电有限公司 | Integrated mould top light source of LED |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190122 |
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