CN101707230A - Method for manufacturing high-power white light LED - Google Patents

Method for manufacturing high-power white light LED Download PDF

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Publication number
CN101707230A
CN101707230A CN200910145176A CN200910145176A CN101707230A CN 101707230 A CN101707230 A CN 101707230A CN 200910145176 A CN200910145176 A CN 200910145176A CN 200910145176 A CN200910145176 A CN 200910145176A CN 101707230 A CN101707230 A CN 101707230A
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Prior art keywords
silica gel
ceramic substrate
white light
light led
power white
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CN200910145176A
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CN101707230B (en
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胡建红
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Jiangsu Wenrun Optoelectronic Co Ltd
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Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
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Abstract

The invention discloses a method for manufacturing a high-power white light LED, comprising the following steps: electroplating silver or aluminum on a ceramic substrate 1 to cover a solid crystal region and print a circuit; b, injecting the silver to a pore path of the ceramic substrate 1 to connect a radiation heat sink 2; c, fixing a wafer 3 by using a silver glue and welding a connection circuit by using a gold wire 4; d, placing a porous metal template 5 on the ceramic substrate 1; e, injecting silica gel fluorescent powder into each pore path 51 of the metal template 5 and covering the wafer 3 and the gold wire 4; f, baking the silica gel; g, taking the metal template 5 out to form a plurality of fluorescent silica gel layers 6; h, covering the other metal template on the fluorescent silica gel layers 6 and injecting the silica gel into a hemisphere concave cavity of the metal template; and i, baking the silica gel to form a silica gel lens 7 and cutting the silica gel lens after demoulding. The method solves the problem of bad consistency and yellow ring of the high-power white light LED and realizes evenness of the coating of the fluorescent powder without needing a special customized wafer.

Description

A kind of method for manufacturing high-power white light LED
Technical field
The present invention relates to a kind of LED manufacture method, relate in particular to a kind of method for manufacturing high-power white light LED, belong to lighting technical field.
Background technology
Current large power white light LED generally adopts the PPA plastics, embeds high heat-conducting copper alloy heat dispersion heat sink, and the mode of coating fluorescent powder is produced on the blue light wafer, and when fluorescent material is subjected to send sodium yellow after blue-light excited, blue light and yellow light mix form white light.The application pattern of fluorescent material is divided into a glue formula and at the wafer surface printing-type, the consistency that exists manufacturing when adopting some glue mode is poor, easily produces yellow circle problem; Adopt the mode of printing complex process, and must adopt the luminescent wafer of specific customization to realize, the production cost height, general manufacturer can't realize.Therefore solve the technical problem of the coating homogenizing of fluorescent material, help to overcome the consistency that the existing large power white light LED mode of production brought poor, yellow circle problem arranged.Simultaneously do not need if can accomplish the specific customization wafer, then help simplifying technological process and realize large-scale production.
Summary of the invention
The object of the present invention is to provide a kind of method for manufacturing high-power white light LED, realize fluorescent powder coated homogenizing, and do not need the wafer of specific customization type, overcome the problem that the consistency that the existing large power white light LED mode of production brought is poor, yellow circle is arranged.
Purpose of the present invention is achieved by the following technical programs:
A kind of method for manufacturing high-power white light LED comprises the following step:
A, electrosilvering or aluminium cover the crystal bonding area territory and print out circuit on ceramic substrate 1;
B, the heat dispersion heat sink 2 that silver connects its bottom is annotated in the duct of ceramic substrate 1;
C, (1mil=1/1000 inch=0.0254mm) above wafer 3 is fixed, and is welded to connect circuit with gold thread 4 at 30mil with length and width to adopt thermal conductivity to reach the above high heat conduction elargol of 15w/m.k;
Place a porous metals template 5 on d, the ceramic substrate 1, hold a wafer 3 that welds line in each duct 51;
E, fluorescent material and silica gel are mixed with silica gel fluorescent material by spraying or the mode of some glue is injected each duct 51 of metal form 5, wafer 3 and gold thread 4 are all covered;
F, press baking temperature: 120～150 ℃, stoving time: 1～2 hour requirement makes the silica gel fluorescent powder curing;
G, metal form 5 is taken out, promptly on ceramic substrate 1, form the fluorescence silica gel layer 6 of a plurality of independently cover wafers 3 this moment;
H, a metal form with half-spherical cavity is covered on fluorescence silica gel layer 6, the silica gel for preparing is injected in the half-spherical cavity of metal form;
I, press baking temperature: 120～150 ℃,, stoving time: 5 minutes requirement, silica gel is solidified into silica-gel lens 7, cut into a plurality of large power white light LEDs after the demoulding.
Purpose of the present invention can also further realize by following technical measures:
Aforesaid a kind of method for manufacturing high-power white light LED, wherein said ceramic substrate 1 adopts aluminium oxide or aluminium nitride material to fire and forms, and described fluorescent material adopts the coarse granule powder of 15～25um particle diameter.
The invention has the beneficial effects as follows: overcome the problem that the consistency that the existing large power white light LED mode of production brought is poor, yellow circle is arranged, the coating of fluorescent material realizes homogenizing, and does not need the wafer of specific customization type.Adopt thermal conductivity up to the ceramic substrate more than the 170w/m.K, be beneficial to the heat radiation of large power chip.Ceramic substrate thermal deformation coefficient is extremely low, can cut into thickness at 0.5～1mm, and the length and width size is easy to realize microminiaturized at the small single luminescence unit of 3～5mm.
Description of drawings
Fig. 1 is the schematic diagram that injects silica gel fluorescent material in the metal form duct on ceramic substrate;
Fig. 2 is the structural representation of fluorescence silica gel layer on the ceramic substrate after the demoulding;
Fig. 3 is the structural representation after the silica-gel lens shaping demoulding.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
As Fig. 1～shown in Figure 3, the present invention comprises the following step:
A, ceramic substrate 1 cover the crystal bonding area territory by the argent of plating high reflectance or the mode of aluminium, increase the reflectivity of light effectively; And be printed as circuit.
B, by the duct of ceramic substrate 1 being annotated the mode of silver, connect the heat dispersion heat sink 2 of the high heat-conducting copper alloy of its bottom.
C, (1mil=1/1000 inch=0.0254mm) above wafer 3 is fixed, and is welded to connect circuit with gold thread 4 at 30mil with length and width to adopt thermal conductivity to reach the above high heat conduction elargol of 15w/m.k.
Place a porous metals template 5 on d, the ceramic substrate 1, hold a wafer 3 that welds line in each duct 51, as shown in Figure 1.
E, fluorescent material and silica gel are mixed with silica gel fluorescent material,, wafer 3 and gold thread 4 are all covered by spraying or the mode of some glue is injected each duct 51 of metal form 5.
F, press baking temperature: 120～150 ℃, stoving time: 1～2 hour requirement makes the silica gel fluorescent powder curing.
G, metal form 5 is taken out, promptly on ceramic substrate 1, form the fluorescence silica gel layer 6 of a plurality of independently cover wafers 3 this moment, as shown in Figure 2.
H, have hemisphere or other cavity shapes metal forms that is easy to the demoulding cover on fluorescence silica gel layer 6 with one,,, inject in the cavity of metal form by the mode that penetrates with the silica gel for preparing;
I, press baking temperature: 120～150 ℃,, stoving time: 5 minutes requirement, silica gel is solidified into silica-gel lens 7, cut into a plurality of large power white light LEDs after the demoulding, as shown in Figure 2.
Ceramic substrate of the present invention adopts the material of aluminium oxide or aluminium nitride to fire and forms, and its thermal conductivity is beneficial to the heat radiation of large power chip up to more than the 170w/m.K.Ceramic substrate thermal deformation coefficient is extremely low, can cut into thickness at 0.5～1mm, and the length and width size is easy to realize microminiaturized at the small single luminescence unit of 3～5mm.
Fluorescent material of the present invention adopts the coarse granule powder of 15～25um particle diameter, can be lifted out optical efficiency,
The half-spherical cavity that step h of the present invention adopts helps the demoulding.The present invention has overcome the problem that the consistency that the existing large power white light LED mode of production brought is poor, yellow circle is arranged, and the coating of fluorescent material realizes homogenizing, and does not need the wafer of specific customization type.
In addition to the implementation, the present invention can also have other execution modes, and all employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop in the protection range of requirement of the present invention.

Claims (4)

1. a method for manufacturing high-power white light LED is characterized in that, comprises the following step:
A, go up electrosilvering or aluminium covers the crystal bonding area territory and prints out circuit at ceramic substrate (1);
B, the heat dispersion heat sink (2) that silver connects its bottom is annotated in the duct of ceramic substrate (1);
C, the high heat conduction elargol that adopts thermal conductivity to reach more than the 15w/m.k are fixed the wafer (3) of length and width more than 30mil, are welded to connect circuit with gold thread (4);
D, ceramic substrate (1) are gone up and are placed a porous metals template (5), hold a wafer (3) that welds line in each duct (51);
E, fluorescent material and silica gel are mixed with silica gel fluorescent material by spraying or the mode of some glue is injected each duct (51) of metal form (5), wafer (3) and gold thread (4) are all covered;
F, press baking temperature: 120～150 ℃, stoving time: 1～2 hour requirement makes the silica gel fluorescent powder curing;
G, metal form (5) is taken out, promptly go up the fluorescence silica gel layer (6) that forms a plurality of independently cover wafers (3) at ceramic substrate (1) this moment;
H, a metal form with half-spherical cavity is covered on fluorescence silica gel layer (6), the silica gel for preparing is injected in the half-spherical cavity of metal form;
I, press baking temperature: 120～150 ℃,, stoving time: 5 minutes requirement, silica gel is solidified into silica-gel lens (7), cut into a plurality of large power white light LEDs after the demoulding.
2. a kind of method for manufacturing high-power white light LED as claimed in claim 1 is characterized in that, described ceramic substrate (1) adopts alumina material to fire and forms.
3. a kind of method for manufacturing high-power white light LED as claimed in claim 1 is characterized in that, described ceramic substrate (1) adopts aluminium nitride material to fire and forms.
4. a kind of method for manufacturing high-power white light LED as claimed in claim 3 is characterized in that, described fluorescent material adopts the coarse granule powder of 15～25um particle diameter.
CN2009101451765A 2009-10-13 2009-10-13 Method for manufacturing high-power white light LED Active CN101707230B (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157665A (en) * 2011-03-22 2011-08-17 湘能华磊光电股份有限公司 Light-emitting diode (LED) chip packaging structure and packaging method thereof
CN102185050A (en) * 2011-04-22 2011-09-14 江苏苏能光电科技有限责任公司 Ceramic substrate module packaging method applicable to alternating-current direct-drive LED (light-emitting diode) light source
CN102214777A (en) * 2011-05-09 2011-10-12 厦门市英诺尔电子科技有限公司 High-power LED (light-emitting diode) packaging substrate and manufacturing method thereof
CN102222739A (en) * 2011-06-27 2011-10-19 中外合资江苏稳润光电有限公司 Method for encapsulating white light LED (Light Emitting Diode) display module
CN102738317A (en) * 2011-04-12 2012-10-17 上海矽卓电子科技有限公司 Packaging method for light source used in LED fluorescent lamp and light source
CN102809137A (en) * 2011-06-01 2012-12-05 弘凯光电股份有限公司 Lamp heat radiation structure manufacturing method and lamp component manufacturing method
CN103022326A (en) * 2012-12-26 2013-04-03 常州银河世纪微电子有限公司 Intensive packaging method of LEDs
CN103090227A (en) * 2012-12-29 2013-05-08 瑞安市亿星新能源有限公司 Light emitting diode (LED) lighting board and manufacturing method thereof
WO2013177796A1 (en) * 2012-06-01 2013-12-05 东莞华明灯具有限公司 Method of changing light emitting angle of led light strip by glue injection
CN106784261A (en) * 2016-11-30 2017-05-31 深圳市聚飞光电股份有限公司 A kind of preparation method of laminated devices quantum dot LED backlight
CN106848038A (en) * 2017-01-18 2017-06-13 东洋工业照明（广东）有限公司 A kind of painting method of LED fluorescent powder
CN109256448A (en) * 2018-08-07 2019-01-22 广州市巨宏光电有限公司 A kind of LED light moulding process

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157665A (en) * 2011-03-22 2011-08-17 湘能华磊光电股份有限公司 Light-emitting diode (LED) chip packaging structure and packaging method thereof
CN102738317A (en) * 2011-04-12 2012-10-17 上海矽卓电子科技有限公司 Packaging method for light source used in LED fluorescent lamp and light source
CN102185050A (en) * 2011-04-22 2011-09-14 江苏苏能光电科技有限责任公司 Ceramic substrate module packaging method applicable to alternating-current direct-drive LED (light-emitting diode) light source
CN102214777A (en) * 2011-05-09 2011-10-12 厦门市英诺尔电子科技有限公司 High-power LED (light-emitting diode) packaging substrate and manufacturing method thereof
CN102809137A (en) * 2011-06-01 2012-12-05 弘凯光电股份有限公司 Lamp heat radiation structure manufacturing method and lamp component manufacturing method
CN102222739A (en) * 2011-06-27 2011-10-19 中外合资江苏稳润光电有限公司 Method for encapsulating white light LED (Light Emitting Diode) display module
CN102222739B (en) * 2011-06-27 2012-12-19 中外合资江苏稳润光电有限公司 Method for encapsulating white light LED (Light Emitting Diode) display module
CN103857956B (en) * 2012-06-01 2016-03-30 东莞华明灯具有限公司 LED changes the method for rising angle by encapsulating
WO2013177796A1 (en) * 2012-06-01 2013-12-05 东莞华明灯具有限公司 Method of changing light emitting angle of led light strip by glue injection
CN103857956A (en) * 2012-06-01 2014-06-11 东莞华明灯具有限公司 Method of changing light emitting angle of LED light strip by glue injection
CN103022326B (en) * 2012-12-26 2015-05-13 常州银河世纪微电子有限公司 Intensive packaging method of LEDs
CN103022326A (en) * 2012-12-26 2013-04-03 常州银河世纪微电子有限公司 Intensive packaging method of LEDs
CN103090227A (en) * 2012-12-29 2013-05-08 瑞安市亿星新能源有限公司 Light emitting diode (LED) lighting board and manufacturing method thereof
CN103090227B (en) * 2012-12-29 2017-07-11 瑞安市亿星新能源有限公司 LED luminescent screens and its manufacture method
CN106784261A (en) * 2016-11-30 2017-05-31 深圳市聚飞光电股份有限公司 A kind of preparation method of laminated devices quantum dot LED backlight
CN106848038A (en) * 2017-01-18 2017-06-13 东洋工业照明（广东）有限公司 A kind of painting method of LED fluorescent powder
CN109256448A (en) * 2018-08-07 2019-01-22 广州市巨宏光电有限公司 A kind of LED light moulding process

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