CN109212843A - 一种基于双边IPS电极结构的LCoS微显示器 - Google Patents
一种基于双边IPS电极结构的LCoS微显示器 Download PDFInfo
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Abstract
本发明提出一种基于双边IPS电极结构的LCoS微显示器。该微显示器由上基板、蓝相液晶层、下基板构成;上基板和下基板彼此平行设置;上基板包括偏振器、二分之一波片、四分之一波片、玻璃基板、上基板透明平面公共电极、上基板透明平面像素电极;下基板包括下基板透明平面公共电极、下基板透明平面像素电极、绝缘层、金属漫反射膜、单晶硅基板;上下基板的透明平面公共电极和透明平面像素电极彼此相对平行设置并且相间排列,构成双边的IPS电极结构。本发明的基于双边IPS电极结构的LCoS微显示器的响应时间为亚毫秒,制作工艺简单,驱动电压较低。
Description
技术领域
本发明涉及液晶显示领域,具体是一种基于双边IPS(In Plane Switching)电极结构的LCoS(Liquid Crystal on Silicon)微显示器。
背景技术
LCoS显示技术是结合LCD(Liquid Crystal Display)和CMOS(ComplementaryMetal Oxide Semiconductor)集成电路的反射式液晶显示技术,由于其功耗低、体积小、分辨率高,在便携式显示应用方面有很大的优势,全球的微显示器市场都呈现出良好的增长态势。
对于传统的透射式TFT-LCD,由于TFT(Thin Film Transistor)在像素中所占的面积不能完全透光,经过TFT所占面积区域的光线不能受电压的控制,导致无法显示正确的灰阶,相当于存在光调制的死区,需要利用黑矩阵加以遮蔽,使得开口率较低。相比传统的透射式TFT-LCD,LCoS微显示器的驱动像素的电路和晶体管集成在单晶硅基片上,并位于像素反射镜的下方,从而提高了开口率,并且单晶硅电子迁移率比非晶硅电子迁移率高,像素尺寸能做到很小,从而实现了更高的分辨率。
一般LCoS显示技术主要采用时序彩色显示***,相比传统的三片式的光学***,时序彩色投影显示采用的单片式光学***的结构更加简单,但是为了减少动态伪像,液晶盒应具有超快的响应速度。目前,TN(Twisted Nematic)液晶盒、混合式的TN液晶盒、VA(Vertical Alignment)取向的液晶盒已被应用于反射式的LCoS投影显示,如果液晶盒盒厚足够小,能大大减小响应时间,然而,当盒厚减小到1μm时,盒厚的均匀程度却难以控制。
新兴的聚合物稳定蓝相液晶由于其具有亚毫秒的响应时间、无需取向层且暗态呈光学各向同性,如果电极采用IPS结构,只要液晶盒厚超过电场最大的穿透深度,透过率对盒厚的变化就不明显,可应用于LCoS投影显示。然而传统的基于IPS电极结构的蓝相液晶显示器的工作电压(~50V)比较高。
本发明目的在于克服现有技术中存在的缺陷,提出了一种基于双边IPS电极结构的LCoS微显示器,该微显示器具有亚毫秒的灰阶响应时间,制作工艺简单,驱动电压相对于传统的基于IPS电极结构蓝相液晶显示器大幅度降低。
本发明是通过以下技术方案实现的:
本发明由上基板13、蓝相液晶层7、下基板14构成;上基板和下基板彼此平行设置;上基板13包括偏振器1、二分之一波片2、四分之一波片3、玻璃基板4、上基板透明平面公共电极5、上基板透明平面像素电极6;下基板包括下基板透明平面公共电极8、下基板透明平面像素电极9、绝缘层10、金属漫反射膜11、单晶硅基板12。
所述二分之一波片2和四分之一波片3构成圆偏振片,通过偏振器1的线偏振光经圆偏振片后变为圆偏振光,经蓝相液晶层7被金属漫反射膜11反射后,发生半波损失,相位改变π,再经蓝相液晶层7及圆偏振片出射的线偏振光的方向与偏振器1的偏振轴相互正交,使显示器在不加电压的时候呈现良好的暗态,实现显示器的宽视角特性。
所述的蓝相液晶层7采用聚合物稳定的蓝相液晶,具有亚毫秒的响应时间,能实现时序彩色显示,减少了动态伪像;蓝相液晶暗态为光学各向同性,使得观看视角较宽;无需旋涂取向剂进行取向,简化了制作工艺。所述蓝相液晶层7的厚度使用间隔子进行控制。
所述金属漫反射膜11置于单晶硅基板12的表面,采用高反射率的金属进行制作,表面坑洼不平,用于反射入射光线。反射式显示几乎不受开口率限制,能得到更高的光反射率。所述绝缘层10采用氧化物制作,用于避免金属漫反射膜11的电压屏蔽效应。
所述上基板透明平面公共电极5、上基板透明平面像素电极6、下基板透明平面公共电极8和下基板透明平面像素电极9采用氧化铟锡(ITO)或氧化铟锌(IZO)等透明导电材料制作,具有高透过率和高导电率。上基板透明平面公共电极5、上基板透明平面像素电极6、下基板透明平面公共电极8和下基板透明平面像素电极9都为条形平面电极且宽度、间隙都相同,上下基板的透明平面公共电极和透明平面像素电极彼此相对平行设置并且相间排列,构成双边的IPS电极结构,增加电场的穿透深度,减小工作电压。
所述单晶硅基板12是带有CMOS集成电路的单晶硅基板。基于双边IPS电极结构的LCoS微显示器的液晶盒由单晶硅基板12和玻璃基板4封接而成,所用玻璃的膨胀系数与硅片的膨胀系数相当。单晶硅具有良好的电子迁移率,能集成高密度的开关矩阵,液晶盒的像素尺寸为微米量级,能实现高分辨率显示。
上述各附图中的图示标号为:
1偏振器、2二分之一波片、3四分之一波片、4玻璃基板、5上基板透明平面公共电极、6上基板透明平面像素电极、7蓝相液晶层、8下基板透明平面公共电极、9下基板透明平面像素电极、10绝缘层、11金属漫反射膜、12单晶硅基板、13上基板、14下基板。
附图说明
附图1是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器的结构示意图。
附图2是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器上基板透明平面公共电极5、上基板透明平面像素电极6的位置关系俯视图。
附图3是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器的电压-反射率曲线。
附图4是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器的等对比度视角图。
具体实施方式
为使本领域的技术人员能更进一步了解本发明,下面将结合附图详细地说明本发明的具体实施方式。需要说明的是,附图仅以说明为目的,并未依照原始尺寸作图。
附图1是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器的结构示意图,该微显示器由上基板13、蓝相液晶层7、下基板14构成。上基板13包括偏振器1、二分之一波片2、四分之一波片3、玻璃基板4、上基板透明平面公共电极5、上基板透明平面像素电极6;下基板包括下基板透明平面公共电极8、下基板透明平面像素电极9、绝缘层10、金属漫反射膜11、单晶硅基板12;二分之一波片2为负性,四分之一波片3为正性,二分之一波片2和四分之一波片3构成圆偏振片,使得该显示器在不加电压的时候呈现良好的暗态;蓝相液晶层7采用聚合物稳定的蓝相液晶;上基板及下基板透明平面公共电极和透明平面像素电极采用透明导电材料氧化铟锡(ITO)制作,当给上基板透明平面像素电极6和下基板透明平面像素电极9施加电压时,蓝相液晶由原来的各向同性变为各向异性,对入射和反射的光线累积相位差,从而改变像素的灰阶;上基板及下基板的透明平面公共电极和透明平面像素电极都为条形平面电极且宽度、间隙都相同,上下基板的透明平面公共电极和透明平面像素电极彼此相对平行设置并且相间排列,构成双边的IPS电极结构,增加电场的穿透深度,减小工作电压;金属漫反射膜采用金属铝制作且反射膜表面粗糙,贴在单晶硅基板12上,使得入射光线发生反射再出射液晶盒。
附图2是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器一个像素内上基板及下基板透明平面公共电极和透明平面像素电极的位置关系俯视图,透明平面公共电极、透明平面像素电极宽度均为w,间隙均为g,一个像素的宽度为l。
设定检偏器1透光轴为0°,二分之一波片2的透光轴相对于玻璃基板4的方向为75°,四分之一波片3透光轴相对于玻璃基板4的方向为-75°。
本实施例中使用的液晶材料的特性参数为:蓝相液晶的材料折射率为no=1.5,ne=1.654,介电系数ε=94,在波长λ=550nm时,最大双折射为0.154,饱和电场为4.15V/μm,克尔系数K=16.3nm/V2。
本实施例中蓝相液晶层7厚度d=5μm,上基板及下基板透明平面公共电极和透明像素电极的的宽度w=1μm,间隙g=2μm。
附图3是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器的电压-反射率曲线。由附图3可知,本发明实施例的峰值电压为9.6Vrms,峰值反射率为60%。
附图4是本发明实施例提供的基于双边IPS电极结构的LCoS微显示器的等对比度视角图,由附图4可知,本实施例的视角非常匀称,对比度大于1000:1的视角能够达到20°。本发明提出的基于双边IPS电极结构的LCoS微显示器适合应用于高清大屏幕投影机、便携式微型投影机和近眼显示器。
以上所述仅为本发明的优选实施例,但本发明不限于此实施例。本领域的普通技术人员应当理解,在不脱离由权利要求书限定的本发明的精神实质和范围的情况下对其形式和细节做出的各种改变,皆应属本发明的范围内。
Claims (4)
1.一种基于双边IPS电极结构的LCoS微显示器,该微显示器由上基板、蓝相液晶层、下基板构成;上基板和下基板彼此平行设置;上基板包括偏振器、二分之一波片、四分之一波片、玻璃基板、上基板透明平面公共电极、上基板透明平面像素电极;下基板包括下基板透明平面公共电极、下基板透明平面像素电极、绝缘层、金属漫反射膜、单晶硅基板。
2.根据权利要求1所述的一种基于双边IPS电极结构的LCoS微显示器,其特征为,所述的蓝相液晶层采用聚合物稳定的蓝相液晶。
3.根据权利要求1所述的一种基于双边IPS电极结构的LCoS微显示器,其特征为,所述金属漫反射膜置于单晶硅基板的表面。
4.根据权利要求1所述的一种基于双边IPS电极结构的LCoS微显示器,其特征为,所述上下基板的透明平面公共电极和透明平面像素电极都为条形平面电极且电极宽度、间隙都相同。
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