CN109186802A - A kind of high temperature resistant doped fiber temperature sensor - Google Patents
A kind of high temperature resistant doped fiber temperature sensor Download PDFInfo
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- CN109186802A CN109186802A CN201811010077.1A CN201811010077A CN109186802A CN 109186802 A CN109186802 A CN 109186802A CN 201811010077 A CN201811010077 A CN 201811010077A CN 109186802 A CN109186802 A CN 109186802A
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- crystal
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- high temperature
- temperature resistant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/32—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
- C03C13/048—Silica-free oxide glass compositions
Abstract
A kind of high temperature resistant doped fiber temperature sensor provided by the invention, including light source, path-splitting device, reference path, sensitive optical path, light power meter, data processing and storage device;The reference path, sensitive optical path are in parallel, and one end is sequentially connected with path-splitting device, light source, and the other end is sequentially connected with light power meter, data processing and storage device;Reference path and sensitive optical path are sensitive optical fibre.The high temperature resistant doped fiber temperature sensor is using doping sapphire crystal material as sensitive optical fibre, including fiber core and the clad material being coated on outside fiber core, fiber core preparation process is simple, with excellent absorption characteristic and upper shift strength, the application range of sapphire fiber is substantially increased;Clad material uses doped polycrystalline aluminium oxide and Er3+Multicomponent phosphate glass, it is at low cost, and the requirement of total reflection can be can satisfy;The sensor detection sensitivity is high, as a result accurately.
Description
Technical field
The present invention relates to temperature testing equipment field, especially a kind of high temperature resistant doped fiber temperature sensor.
Background technique
Optical fiber with the development of science and technology, has emerged in large numbers various high temperature resistants since the 1970s comes out
Doped fiber temperature sensor.Optical fiber has the advantages of small in size, light-weight, flexible structure, electromagnetism interference, electrical isolation.Mesh
Preceding high temperature resistant doped fiber temperature sensor mainly includes fiber bragg grating (FBG) temperature sensor, semiconductor absorption
High temperature resistant doped fiber temperature sensor and optical fiber Fabry-Perot chamber interference type temperature sensor etc..
Wherein, optical fiber Bragg grating temperature sensor is carved in a fiber by precision process, is made in optical fiber
Refractive index at periodic distribution, formed fiber bragg grating (FBG).When extraneous factor variation when, fiber grating it is effective
Refractive index and grating constant can change, and so as to cause the variation of FBG characteristic wavelength, therefore fiber grating temperature sensor is
Using bragg wavelength to the sensitivity characteristic of temperature and a kind of manufactured fibre optical sensor.But fiber bragg grating temperature senses
The problem of device is modulated using wavelength, and it is complicated to lead to demodulating system, and easily causes Temperature-Stress cross-inductive.
Semiconductor absorber type high temperature resistant doped fiber temperature sensor is to be become using the absorption spectrum of semiconductor material with temperature
Change and change characteristic realize, when light passes through semiconductive thin film, if incident photon energy be more than semiconductor conduction band and valence
When forbidden bandwidth between band, semiconductive thin film will generate absorption to the light that passes through.Therefore it can be inhaled by measurement semiconductor
The light intensity or spectral measurement variation of ambient temperature of receipts.But semiconductor absorption high temperature resistant doped fiber temperature sensor presence pair
Signal transmission fiber requires high, it usually needs special large aperture optical fiber;And since optical fiber and semiconductive thin film are INDIRECT COUPLINGs,
Coupling efficiency much smaller than optical fiber with optical fiber is directly fused couples;Semiconductor membrane manufacturing process is also more complex, technique require compared with
It is high;Since semiconductor absorber is the electron transition absorption between conduction band and valence band, absorption bands are in Uv and visible light wave band
Short-wave band.Therefore it is required that ultraviolet wideband light source, expensive, it is also higher to optical fiber requirement, and the precision measured is lower, usually only
There is ± 1 DEG C.
Summary of the invention
Technical problem: in order to solve the defects of prior art, the present invention provides a kind of high temperature resistant doped fiber temperature biographies
Sensor.
Technical solution: a kind of high temperature resistant doped fiber temperature sensor provided by the invention, including light source (1), path-splitting
Device (2), reference path (3), sensitive optical path (4), light power meter (5), data processing and storage device (6);The reference path
(3), sensitive optical path (4) is in parallel, and one end is sequentially connected with path-splitting device (2), light source (1), the other end and light power meter (5),
Data processing and storage device (6) are sequentially connected;Reference path (3) and sensitive optical path (4) are sensitive optical fibre.
As an improvement, the sensitive optical fibre is the clad doped sapphire crystal material optical fiber of high temperature resistant comprising doping is blue
Jewel fiber core and the clad material being coated on outside doping sapphire fiber fibre core;The clad material is doped polycrystalline oxygen
Change aluminium and Er3+Multicomponent phosphate glass, the doping sapphire fiber core material is more doping sapphire laser crystal
Material, more doping sapphire laser crystal are Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
As an improvement, Cr4+、Ho3+、Mg2+Molar ratio be (3-5): (1-3): 1.
As an improvement, the Cr4+、Ho3+、Mg2+Total mole number and Ti3+:Al2O3The ratio between molal quantity is (2-4): 100.
As an improvement, polycrystal alumina is mixed in the doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+
Amount is 5-15 parts by weight, Er3+Volume be 0.5-1.5 parts by weight, in parts by weight.
As an improvement, the doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+ composition are as follows: P2O5: 45~65
Parts by weight;K2The parts by weight of O:10~20;The parts by weight of BaO:5~10;Al2O3: 10~20 parts by weight.
As an improvement, the preparation method of the clad doped sapphire crystal material of high temperature resistant, using crystal fibre and its
The synchronous Preparation equipment of covering is made, comprising the following steps:
(1) it is packed into crystal optical fibre raw material in lower crucible, is packed into coverstock in upper crucible;Heat lower crucible and upper earthenware
Crucible;
(2) after crystal optical fibre raw material and coverstock are melted in covering column top kind seed crystal, due to capillarity, under
Crystal optical fibre raw material melt in crucible reaches covering capital by crystal optical fibre feeding and shaping pipe, and seed crystal first touches crystal light
Crystal optical fibre raw material melt in fine feeding and shaping pipe starts shouldering;
(3) crystal is constantly grown, and due to capillarity, the coverstock melt in upper crucible passes through covering feeding and shaping
Pipe reaches covering capital, until crystal contact is to the coverstock melt in covering feeding and shaping pipe, in covering feeding and shaping pipe
Coverstock melt is attached to the growth of fiber crystal outer wall;To fiber crystal and clad material synchronous growth.
As an improvement, the crystal fibre and its synchronous Preparation equipment of covering, including lower crucible (1), upper crucible (2), earthenware
Crucible support column (3), covering column (4);The upper crucible (2) be located at the top of lower crucible (1) and lower crucible (1) and upper crucible (2) it
Between by crucible supporting column (3) connect;Described covering column (4) one end is located in lower crucible (1), and passes vertically through crucible (2),
The other end is located above upper crucible (2);Be equipped with crystal optical fibre feeding and shaping pipe (5) in the covering column (4) and covering be fed at
Shape pipe (6), the covering feeding and shaping pipe (6) are circulating line and are located on crystal optical fibre feeding and shaping pipe (5) outside.
In step (1), the crystal optical fibre raw material is Al2O3、Ti2O3、CrO2、Ho2O3、MgO。
In step (1), the coverstock is the multicomponent phosphate glass of doped polycrystalline aluminium oxide and Er3+.
The utility model has the advantages that high temperature resistant doped fiber temperature sensor provided by the invention is made using doping sapphire crystal material
For sensitive optical fibre, including fiber core and the clad material being coated on outside fiber core, fiber core preparation process is simple, tool
There are excellent absorption characteristic and upper shift strength, substantially increases the application range of sapphire fiber;Clad material uses doping
Polycrystal alumina and Er3+Multicomponent phosphate glass, it is at low cost, and the requirement of total reflection can be can satisfy;The sensing
Device detection sensitivity is high, as a result accurately.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of high temperature resistant doped fiber temperature sensor.
Fig. 2 is the structural schematic diagram of crystal fibre and its synchronous Preparation equipment of covering.
Specific embodiment
The present invention is further illustrated below.
Preparation doping sapphire laser crystal is Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
Embodiment 1
Adulterate sapphire laser crystalline material Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
It adulterates in sapphire laser crystalline material, Cr4+、Ho3+、Mg2+Molar ratio be 4:2:1;Cr4+、Ho3+、Mg2+It is total
Molal quantity and Ti3+:Al2O3The ratio between molal quantity is 3:100.
The preparation method of the doping sapphire laser crystalline material, comprising the following steps:
(1) the crystal growth mold of capillary is equipped in the middle part of placing in the middle part of crucible, by raw material A l2O3、Ti2O3、CrO2、
Ho2O3, MgO be placed in crucible, heating crucible make melting sources formed melt;
(2) seed crystal lifting melt is connect in die top, seed crystal is made constantly to carry out atom or molecule on the interface of melt
It resets, gradually solidified with cooling and grows monocrystalline identical with die edge shape.
Embodiment 2
Adulterate sapphire laser crystalline material Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
It adulterates in sapphire laser crystalline material, Cr4+、Ho3+、Mg2+Molar ratio be 3:3:1;Cr4+、Ho3+、Mg2+It is total
Molal quantity and Ti3+:Al2O3The ratio between molal quantity is 4:100.
The preparation method of the doping sapphire laser crystalline material, comprising the following steps:
(1) the crystal growth mold of capillary is equipped in the middle part of placing in the middle part of crucible, by raw material A l2O3、Ti2O3、CrO2、
Ho2O3, MgO be placed in crucible, heating crucible make melting sources formed melt;
(2) seed crystal lifting melt is connect in die top, seed crystal is made constantly to carry out atom or molecule on the interface of melt
It resets, gradually solidified with cooling and grows monocrystalline identical with die edge shape.
Embodiment 3
Adulterate sapphire laser crystalline material Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
It adulterates in sapphire laser crystalline material, Cr4+、Ho3+、Mg2+Molar ratio be 5:1:1;Cr4+、Ho3+、Mg2+It is total
Molal quantity and Ti3+:Al2O3The ratio between molal quantity is 2:100.
The preparation method of the doping sapphire laser crystalline material, comprising the following steps:
(1) the crystal growth mold of capillary is equipped in the middle part of placing in the middle part of crucible, by raw material A l2O3、Ti2O3、CrO2、
Ho2O3, MgO be placed in crucible, heating crucible make melting sources formed melt;
(2) seed crystal lifting melt is connect in die top, seed crystal is made constantly to carry out atom or molecule on the interface of melt
It resets, gradually solidified with cooling and grows monocrystalline identical with die edge shape.
Test Ti3+:Al2O3, embodiment 1 to 3 doping sapphire laser crystalline material Cr4+/Ho3+/Mg2+/Ti3+:Al2O3
Absorption characteristic.
Diameter 1.0mm is made in sample, the cylindrical fiber of long 4mm, two sides is put into fiber coupling after carefully polishing
It in device, is measured using quartzy lamp source as light source, measure spectrum range 400-1000nm.The results show that BaTiO3, implement
The doping sapphire laser crystalline material Cr of example 1 to 34+/Ho3+/Mg2+/Ti3+:Al2O3Apparent suction is all had near 560nm
Peak is received, moreover, the doping sapphire laser crystalline material Cr of embodiment 14+/Ho3+/Mg2+/Ti3+:Al2O3Near 560nm
Absorption peak is maximum, the doping sapphire laser crystalline material Cr of embodiment 2 and 34+/Ho3+/Mg2+/Ti3+:Al2O3It is attached in 560nm
Close absorption peak is when young;It proves: doping sapphire laser crystalline material Cr4+/Ho3+/Mg2+/Ti3+:Al2O3With than Ti3+:
Al2O3Superior absorption characteristic.
Test Ti3+:Al2O3, embodiment 1 to 3 doping sapphire laser crystalline material Cr4+/Ho3+/Mg2+/Ti3+:
Al2O3Upper transfer efficiency.
It uses the semiconductor laser of 560nm as pump light source, sample is pumped, and measure the upper conversion light of a sample
Spectrum.As the result is shown: Ti3+:Al2O3There is upconversion emission;The doping sapphire laser crystalline material Cr of embodiment 1 to 34+/Ho3+/
Mg2+/Ti3+:Al2O3Upconversion emission intensity ratio Ti3+:Al2O3It is remarkably reinforced very much.
The crystal fibre and its synchronous Preparation equipment of covering, including lower crucible (1), upper crucible (2), crucible supporting column
(3), covering column (4);The upper crucible (2) is located at the top of lower crucible (1) and passes through earthenware between lower crucible (1) and upper crucible (2)
Crucible support column (3) connection;Described covering column (4) one end is located in lower crucible (1), and passes vertically through crucible (2), other end position
Above upper crucible (2);Crystal optical fibre feeding and shaping pipe (5) and covering feeding and shaping pipe (6) are equipped in the covering column (4),
The covering feeding and shaping pipe (6) is circulating line and is located on crystal optical fibre feeding and shaping pipe (5) outside.
Prepare the clad doped sapphire crystal material of high temperature resistant.
Embodiment 4
The clad doped sapphire crystal material of high temperature resistant, including adulterate sapphire fiber fibre core and be coated on the blue treasured of doping
Clad material outside stone fiber core;The clad material is doped polycrystalline aluminium oxide and Er3+Multicomponent phosphate glass, institute
Stating doping sapphire fiber core material is more doping sapphire laser crystalline materials, and more doping sapphire laser crystal are
Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
Doping sapphire laser crystal is Cr4+/Ho3+/Mg2+/Ti3+:Al2O3;Wherein, Cr4+、Ho3+、Mg2+Molar ratio
For 4:2:1, the Cr4+、Ho3+、Mg2+Total mole number and Ti3+:Al2O3The ratio between molal quantity is 3:100.
Doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+ composition are as follows: P2O5: 55 parts by weight;K2O:15 weight
Part;BaO:7.5 parts by weight;Al2O3: 15 parts by weight.
In the doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+, the volume of polycrystal alumina is 10 weight
Part, Er3+Volume be 1 parts by weight, in parts by weight.
The preparation method of the above-mentioned clad doped sapphire crystal material of high temperature resistant utilizes crystal fibre and its synchronous system of covering
Standby equipment is made, comprising the following steps:
(1) it is packed into crystal optical fibre raw material in lower crucible, is packed into coverstock in upper crucible;Heat lower crucible and upper earthenware
Crucible;
(2) after crystal optical fibre raw material and coverstock are melted in covering column top kind seed crystal, due to capillarity, under
Crystal optical fibre raw material melt in crucible reaches covering capital by crystal optical fibre feeding and shaping pipe, and seed crystal first touches crystal light
Crystal optical fibre raw material melt in fine feeding and shaping pipe starts shouldering;
(3) crystal is constantly grown, and due to capillarity, the coverstock melt in upper crucible passes through covering feeding and shaping
Pipe reaches covering capital, until crystal contact is to the coverstock melt in covering feeding and shaping pipe, in covering feeding and shaping pipe
Coverstock melt is attached to the growth of fiber crystal outer wall;To fiber crystal and clad material synchronous growth.
Embodiment 5
The clad doped sapphire crystal material of high temperature resistant, including adulterate sapphire fiber fibre core and be coated on the blue treasured of doping
Clad material outside stone fiber core;The clad material is doped polycrystalline aluminium oxide and Er3+Multicomponent phosphate glass, institute
Stating doping sapphire fiber core material is more doping sapphire laser crystalline materials, and more doping sapphire laser crystal are
Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
Doping sapphire laser crystal is Cr4+/Ho3+/Mg2+/Ti3+:Al2O3;Wherein, Cr4+、Ho3+、Mg2+Molar ratio
For 3:3:1, the Cr4+、Ho3+、Mg2+Total mole number and Ti3+:Al2O3The ratio between molal quantity is 2:100.
Doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+ composition are as follows: P2O5: 45 parts by weight;K2O:20 weight
Part;BaO:5 parts by weight;Al2O3: 20 parts by weight.
In the doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+, the volume of polycrystal alumina is 5 weight
Part, Er3+Volume be 1.5 parts by weight, in parts by weight.
Preparation method is the same as embodiment 4.
Embodiment 6
The clad doped sapphire crystal material of high temperature resistant, including adulterate sapphire fiber fibre core and be coated on the blue treasured of doping
Clad material outside stone fiber core;The clad material is doped polycrystalline aluminium oxide and Er3+Multicomponent phosphate glass, institute
Stating doping sapphire fiber core material is more doping sapphire laser crystalline materials, and more doping sapphire laser crystal are
Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
Doping sapphire laser crystal is Cr4+/Ho3+/Mg2+/Ti3+:Al2O3;Wherein, Cr4+、Ho3+、Mg2+Molar ratio
For 5:1:1, the Cr4+、Ho3+、Mg2+Total mole number and Ti3+:Al2O3The ratio between molal quantity is 4:100.
Doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+ composition are as follows: P2O5: 65 parts by weight;K2O:10 weight
Part;BaO:10 parts by weight;Al2O3: 10 parts by weight.
In the doped polycrystalline aluminium oxide and the multicomponent phosphate glass of Er3+, the volume of polycrystal alumina is 15 weight
Part, Er3+Volume be 0.5 parts by weight, in parts by weight.
Preparation method is the same as embodiment 4.
Embodiment 7
High temperature resistant doped fiber temperature sensor, is shown in Fig. 1, including light source (1), path-splitting device (2), reference path (3), quick
Photosensitive road (4), light power meter (5), data processing and storage device (6);The reference path (3), sensitive optical path (4) are in parallel,
One end is sequentially connected with path-splitting device (2), light source (1), the other end and light power meter (5), data processing and storage device (6)
It is sequentially connected;Reference path (3) and sensitive optical path (4) are sensitive optical fibre.The sensitive optical fibre is the resistance to height of embodiment 4 to 6
The clad doped sapphire crystal material optical fiber of temperature.
Through detecting: -40 DEG C~+800 DEG C temperature measurements may be implemented in the temperature sensor, and Measurement Resolution is better than 0.5 DEG C,
Repeatability reaches 99%.
Claims (10)
1. a kind of high temperature resistant doped fiber temperature sensor, it is characterised in that: including light source (1), path-splitting device (2), reference light
Road (3), sensitive optical path (4), light power meter (5), data processing and storage device (6);The reference path (3), sensitive optical path
(4) in parallel, one end is sequentially connected with path-splitting device (2), light source (1), the other end and light power meter (5), data processing and is deposited
Storage device (6) is sequentially connected;Reference path (3) and sensitive optical path (4) are sensitive optical fibre.
2. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: the sensitive optical fibre
For the clad doped sapphire crystal material optical fiber of high temperature resistant comprising adulterate sapphire fiber fibre core and be coated on the blue treasured of doping
Clad material outside stone fiber core;The clad material is doped polycrystalline aluminium oxide and Er3+Multicomponent phosphate glass, institute
Stating doping sapphire fiber core material is more doping sapphire laser crystalline materials, and more doping sapphire laser crystal are
Cr4+/Ho3+/Mg2+/Ti3+:Al2O3。
3. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: Cr4+、Ho3+、Mg2+
Molar ratio be (3-5): (1-3): 1.
4. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: the Cr4+、Ho3+、
Mg2+Total mole number and Ti3+:Al2O3The ratio between molal quantity is (2-4): 100.
5. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: the doped polycrystalline
In aluminium oxide and the multicomponent phosphate glass of Er3+, the volume of polycrystal alumina is 5-15 parts by weight, Er3+Volume be 0.5-
1.5 parts by weight, in parts by weight.
6. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: the doped polycrystalline
Aluminium oxide and the multicomponent phosphate glass of Er3+ composition are as follows: P2O5: 45~65 parts by weight;K2The parts by weight of O:10~20;BaO:5
~10 parts by weight;Al2O3: 10~20 parts by weight.
7. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: the high temperature resistant packet
The preparation method of layer doping sapphire crystal material is made using crystal fibre and its synchronous Preparation equipment of covering, including following
Step:
(1) it is packed into crystal optical fibre raw material in lower crucible, is packed into coverstock in upper crucible;Heat lower crucible and upper crucible;
(2) in covering column top kind seed crystal, due to capillarity, lower crucible after crystal optical fibre raw material and coverstock melt
Interior crystal optical fibre raw material melt reaches covering capital by crystal optical fibre feeding and shaping pipe, and seed crystal first touches crystal optical fibre confession
Expect the crystal optical fibre raw material melt in forming tube, starts shouldering;
(3) crystal is constantly grown, and due to capillarity, the coverstock melt in upper crucible passes through covering feeding and shaping Guan Da
To covering capital, until covering of the crystal contact to the coverstock melt in covering feeding and shaping pipe, in covering feeding and shaping pipe
Raw material melt is attached to the growth of fiber crystal outer wall;To fiber crystal and clad material synchronous growth.
8. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: the crystal fibre
And its synchronous Preparation equipment of covering, including lower crucible (1), upper crucible (2), crucible supporting column (3), covering column (4);The upper earthenware
Crucible (2) is located at the top of lower crucible (1) and connects by crucible supporting column (3) between lower crucible (1) and upper crucible (2);The packet
Layer column (4) one end is located in lower crucible (1), and passes vertically through crucible (2), and the other end is located above upper crucible (2);The packet
Crystal optical fibre feeding and shaping pipe (5) and covering feeding and shaping pipe (6) are equipped in layer column (4), the covering feeding and shaping pipe (6) is
Circulating line and it is located on crystal optical fibre feeding and shaping pipe (5) outside.
9. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: in step (1), institute
Stating crystal optical fibre raw material is Al2O3、Ti2O3、CrO2、Ho2O3、MgO。
10. a kind of high temperature resistant doped fiber temperature sensor according to claim 1, it is characterised in that: in step (1),
The coverstock is the multicomponent phosphate glass of doped polycrystalline aluminium oxide and Er3+.
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CN201811010077.1A CN109186802A (en) | 2018-08-31 | 2018-08-31 | A kind of high temperature resistant doped fiber temperature sensor |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021087716A1 (en) * | 2019-11-05 | 2021-05-14 | 南京同溧晶体材料研究院有限公司 | Phosphate glass coated europium-lutetium-doped sapphire crystal material and preparation method therefor |
WO2021087714A1 (en) * | 2019-11-05 | 2021-05-14 | 南京同溧晶体材料研究院有限公司 | Thermal field device for synchronous preparation of crystal fiber and cladding, and preparation method therefor |
-
2018
- 2018-08-31 CN CN201811010077.1A patent/CN109186802A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021087716A1 (en) * | 2019-11-05 | 2021-05-14 | 南京同溧晶体材料研究院有限公司 | Phosphate glass coated europium-lutetium-doped sapphire crystal material and preparation method therefor |
WO2021087714A1 (en) * | 2019-11-05 | 2021-05-14 | 南京同溧晶体材料研究院有限公司 | Thermal field device for synchronous preparation of crystal fiber and cladding, and preparation method therefor |
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