CN109164071A - 一种基于Fano共振效应的双阱间隧穿特性测量方法 - Google Patents
一种基于Fano共振效应的双阱间隧穿特性测量方法 Download PDFInfo
- Publication number
- CN109164071A CN109164071A CN201811001217.9A CN201811001217A CN109164071A CN 109164071 A CN109164071 A CN 109164071A CN 201811001217 A CN201811001217 A CN 201811001217A CN 109164071 A CN109164071 A CN 109164071A
- Authority
- CN
- China
- Prior art keywords
- absorption spectra
- quantum well
- double
- tunneling characteristics
- asymmetry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
- G01N2021/1721—Electromodulation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开了一种基于Fano共振效应的双阱间隧穿测量方法,具体步骤为:S1:调节外置偏压源,使双量子阱结构达到共振隧穿,在探测光的激发下,通过光电检测器探测吸收谱的双峰的间距,粗略确定隧穿特性的大小;S2:再次调节外置偏压源,找到双量子阱结构合适的隧穿失谐,再次通过光电检测器探测吸收谱的非对称性,为合适的遂穿失谐,Δ是代表态之间的能级间隔;S3:利用双量子阱结构的极化率确定吸收谱,吸收谱A=c*Im(χ(1)),其中c为常系数,Im(χ(1))为取χ(1)的虚部;S4:将吸收谱的非对称性与隧穿特性的变化关系进行数值拟合,得到双量子阱结构的隧穿特性的大小与吸收谱的非对称性成反比。本发明能够实现隧穿特性的精密测量,提供测量精确度。
Description
技术领域
本发明涉及一种双阱间隧穿特性测量方法,尤其涉及一种基于Fano共振效应的双阱间隧穿特性测量方法。
背景技术
半导体纳米微结构(量子点、量子阱等)的隧穿耦合特性是量子态制备、传递和读取等相干调控的基础,而且深入研究隧穿效应有助于分析电子轨道、自旋态和价态等内禀特性以及光子/声子的吸收/辐射等外部效应,所以结构自身隧穿特性的精密测量是当下微纳材料和光电器件设计的热点问题。量子阱材料具有电偶极矩大、相干时间长、器件易于集成等优点,耦合量子阱***中,阱间隧穿耦合作用显著地改变了介质的光学特性,所以可以借助于介质的光学性质探测隧穿特性。目前,隧穿测量主要有电学方法和光学方法,电学方法主要有两种:其一是通过对源极和漏极之间的微弱电流的精确测量反映隧穿大小;另外一种电学方法是利用静电计靠近量子点,通过感应电荷量反映量子点的隧穿特性,属于无接触测量,但是目前的探测方法,很少有方案考虑到连续态参与的情况,也很少有涉及到利用Fano共振吸收谱的非对称性测量双阱间遂穿特性大小的方法。
发明内容
本发明考虑了连续态的参与,降低了测量的局限性,在连续态参与下的Fano共振效应,分析吸收谱线非对称性对隧穿特性的变化关系。
为了实现上述目的,本发明采用如下技术方案:
一种基于Fano共振效应的双阱间隧穿特性测量方法,具体步骤为:
S1:调节外置偏压源,使双量子阱结构达到共振隧穿,在探测光的激发下,通过光电检测器探测吸收谱的双峰的间距,粗略确定隧穿特性的大小Te;
S2:再次调节外置偏压源,找到双量子阱结构合适的隧穿失谐,再次通过光电检测器探测吸收谱的非对称性,隧穿失谐ΔTe与能级间隔Δ的关系为:其中为合适的遂穿失谐;
S3:利用双量子阱结构的极化率确定吸收谱,吸收谱A=c*Im(χ(1)),其中c为常系数,Im(χ(1))为取χ(1)的虚部;
S4:将吸收谱的非对称性与隧穿特性的变化关系进行数值拟合,得到双量子阱结构的隧穿特性的大小与吸收谱的非对称性成反比。
所述双量子阱结构的极化率计算公式为:
N是载流子密度,约为5×1011cm-2,Δ1是探测场失谐,q是缀饰态|1>→|3>的跃迁与缀饰态|1>→|2>的跃迁偶极矩之比,o代表Fano共振干涉项,由双量子阱间隧穿控制,μ10=5×10-27c·m是量子阱材料的电偶极矩,Γ2代表量子阱材料的缀饰态|2>的衰减速率,Γ3代表量子阱材料的缀饰态|3>的衰减速率,i表示虚数单位,是普朗克常量,∈0是电介质常数,Δ是代表态|2>和|3>的能级间隔。
所述吸收谱的非对称性与双量子阱间隧穿特性的变化关系为:y=-674.3x+117.5;y为吸收谱的非对称性,x为双量子阱间隧穿特性的大小。
实现一种基于Fano共振效应的双阱间隧穿测量方法的实验设备主要包括:激光器,用于产生探测光,激发基态的载流子;外置偏压源,用于控制双量子阱结构的隧穿特性以及隧穿失谐;光电检测器,用于探测吸收谱的非对称性。
本发明的有益效果:
1.本发明提出了一种基于Fano共振效应的双量子阱结构的隧穿特性的测量方法,丰富了隧穿特性测量方法;
2.本发明利用Fano干涉效应,通过吸收谱的非对称性实现双量子阱结构隧穿特性大小的精密测量,相比使用其他指标,测量更加精密,有利于提高测量的精确性。
附图说明
图1为实验方案所用量子阱材料的结构图;
图2为简化的能级模型图;
图3为吸收谱的非对称性变化图形;
图4为非对称性变化对隧穿变化关系的拟合图;
图5为双阱间隧穿测量实验装置;
其中:1.激光器;2.双量子阱结构;3.外置偏压源;4.光电探测器。
具体实施方式
下面结合附图与实施例对本发明作进一步说明。
如图5所示,本实施例中所需要的实验装置主要包括:激光器1用于产生探测光,激发基态的载流子,外置偏压源3用于控制双量子阱结构2的隧穿特性以及隧穿失谐,光电检测器4用于探测吸收谱的非对称性。
如图1和图2所示,双量子阱结构以及导带能级结构,|1>是右边阱的基态,E1=46.7mev,|4>是左边阱的激发态,E4=296.3mev,|2>和|3>是由于双量子阱间隧穿耦合左边阱的基态和右边阱的激发态形成的基态,能量分别为E2=174.8mev,E3=183.5mev;此双量子阱结构的生长顺序是从左至右,左边是比较厚的Al0.4Ga0.6As势垒,右侧是6.8nm宽度的Al0.16Ga0.84A的浅阱,宽度3.0nm的Al0.4Ga0.6As势垒分隔开右边7.7nm宽度的GaAs深阱,最后是一个薄的Al0.4Ga0.6As势垒,宽度为1.5nm,最右侧是Al0.16Ga0.84As的厚涂层;双量子阱间隧穿耦合作用会形成新态|2>和|3>,新形成的两个态|2>和|3>会穿过薄的Al0.4Ga0.6As势垒到最右侧的连续态,探测光的跃迁过程会经过新态|2>和|3>两条路径到达同一个连续态,形成Fano干涉效应。由外置偏压源3提供的偏压大小控制双量子阱间隧穿特性的大小,施加偏压的电极,其位置控制隧穿失谐;由激光器1提供9.36μm的激光束作为探测光,照射在携带双量子阱结构材料的晶体上,通过光电检测器4测量双量子阱结构共振隧穿时的吸收谱,依据吸收谱双峰间距大致判断出隧穿特性大小的大致范围,吸收谱的两个峰值之间的间距大致反应隧穿特性Te,通过调节外置偏压源3电极的位置,找到合适的失谐范围,为合适的失谐范围,隧穿失谐ΔTe与能级间隔Δ的关系为:此时非对称性变化显著,失谐范围调节到合适位置之后,吸收谱的非对称性对隧穿变化如图3所示,将吸收谱的非对称性与隧穿特性的变化关系进行数值拟合,吸收谱的非对称性与双阱间隧穿特性的变化关系为:y=-674.3x+117.5;y为吸收谱的非对称性,x为双量子阱间隧穿特性的大小,精确得到双量子阱结构的遂穿特性的大小。
图4为吸收谱的非对称性变化对隧穿特性变化关系的拟合图,图中纵轴是吸收谱非对称性,横轴是隧穿特性的微弱变化,图中黑点是理论模拟值,实线是拟合的结果。
综上所述,本发明结合了Fano干涉效应,通过吸收谱的非对称性精确测量隧穿特性,进一步拓宽了隧穿特性测量的应用范围。
上述虽然结合附图对本发明的具体实施方式进行了描述,但并非对本发明保护范围的限制,所属领域技术人员应该明白,在本发明的技术方案的基础上,本领域技术人员不需要付出创造性劳动即可做出的各种修改或变形仍在本发明的保护范围以内。
Claims (4)
1.一种基于Fano共振效应的双阱间隧穿特性测量方法,其特征在于,具体步骤为:
S1:调节外置偏压源,使双量子阱结构达到共振隧穿,在探测光的激发下,通过光电检测器探测吸收谱的双峰的间距,粗略确定隧穿特性的大小;
S2:再次调节外置偏压源,找到双量子阱结构合适的隧穿失谐,再次通过光电检测器探测吸收谱的非对称性,为合适的遂穿失谐,Δ是代表态之间的能级间隔;
S3:利用双量子阱结构的极化率确定吸收谱,吸收谱A=c*Im(χ(1)),其中c为常系数,Im(χ(1))为取χ(1)的虚部;
S4:将吸收谱的非对称性与隧穿特性的变化关系进行数值拟合,得到双量子阱结构的隧穿特性的大小与吸收谱的非对称性成反比。
2.如权利要求1所述的一种基于Fano共振效应的双阱间隧穿特性测量方法,其特征在于,所述双量子阱结构的极化率计算公式为:
N是载流子密度,约为5×1011cm-2,Δ1是探测场失谐,q是缀饰态|1>→|3>的跃迁与缀饰态|1>→|2>的跃迁偶极矩之比,o代表Fano共振干涉项,由阱间隧穿控制,μ10=5×10-27c·m是量子阱材料的电偶极矩,Γ2代表量子阱材料的缀饰态|2>的衰减速率,Γ3代表量子阱材料的缀饰态|3>的衰减速率,i表示虚数单位,是普朗克常量,∈0是电介质常数,Δ是代表态|2>和13>的能级间隔。
3.如权利要求1所述的一种基于Fano共振效应的双阱间隧穿特性测量方法,其特征在于,所述吸收谱的非对称性与双量子阱间隧穿特性的变化关系为:y=-674.3x+117.5;y为吸收谱的非对称性,x为双量子阱间隧穿特性的大小。
4.实现如权利要求1所述的一种基于Fano共振效应的双阱间隧穿特性测量方法的实验设备主要包括:激光器,用于产生探测光,激发基态的载流子;外置偏压源,用于控制双量子阱结构的隧穿特性以及隧穿失谐;光电检测器,用于探测吸收谱的非对称性。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811001217.9A CN109164071B (zh) | 2018-08-30 | 2018-08-30 | 一种基于Fano共振效应的双阱间隧穿特性测量方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811001217.9A CN109164071B (zh) | 2018-08-30 | 2018-08-30 | 一种基于Fano共振效应的双阱间隧穿特性测量方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109164071A true CN109164071A (zh) | 2019-01-08 |
CN109164071B CN109164071B (zh) | 2020-11-10 |
Family
ID=64893408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811001217.9A Expired - Fee Related CN109164071B (zh) | 2018-08-30 | 2018-08-30 | 一种基于Fano共振效应的双阱间隧穿特性测量方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109164071B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19648659A1 (de) * | 1996-08-27 | 1998-05-28 | Forschungsverbund Berlin Ev | Verfahren zur Bestimmung von Degradationsprozessen in Halbleiterlasern |
CN102226752A (zh) * | 2011-04-08 | 2011-10-26 | 常熟舒茨电子科技发展有限公司 | 利用光声光谱法检测二氧化硫浓度的方法 |
CN102257406A (zh) * | 2008-10-07 | 2011-11-23 | 特拉辛斯集团公司 | 探测电磁辐射的设备和方法 |
US10134498B2 (en) * | 2013-12-03 | 2018-11-20 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Plasmon generator |
-
2018
- 2018-08-30 CN CN201811001217.9A patent/CN109164071B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19648659A1 (de) * | 1996-08-27 | 1998-05-28 | Forschungsverbund Berlin Ev | Verfahren zur Bestimmung von Degradationsprozessen in Halbleiterlasern |
CN102257406A (zh) * | 2008-10-07 | 2011-11-23 | 特拉辛斯集团公司 | 探测电磁辐射的设备和方法 |
CN102226752A (zh) * | 2011-04-08 | 2011-10-26 | 常熟舒茨电子科技发展有限公司 | 利用光声光谱法检测二氧化硫浓度的方法 |
US10134498B2 (en) * | 2013-12-03 | 2018-11-20 | Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. | Plasmon generator |
Non-Patent Citations (4)
Title |
---|
NI CUI 等: "Tunneling-induced coherent electron population transfer in an asymmetric quantum well", 《OPTICS COMMUNICATIONS》 * |
伊晓红: "量子阱中基于共振隧穿的非线性过程研究", 《中国优秀硕士学位论文全文数据库基础科学辑》 * |
贾继奎 等: "电子隧穿耦合双量子阱的结构设计及光学特性控制", 《吉林大学学报( 理学版)》 * |
金华著: "《低维半导体复合结构的光学性质》", 30 June 2009, 吉林大学出版社 * |
Also Published As
Publication number | Publication date |
---|---|
CN109164071B (zh) | 2020-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6720588B2 (en) | Avalanche photodiode for photon counting applications and method thereof | |
Zheng et al. | High‐performance ferroelectric polymer side‐gated CdS nanowire ultraviolet photodetectors | |
Trupke et al. | Self-consistent calibration of photoluminescence and photoconductance lifetime measurements | |
JP5107183B2 (ja) | テラヘルツ光検出装置とその検出方法 | |
Giesecke et al. | Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images | |
Ahrenkiel et al. | Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials | |
Almadori et al. | Multimodal noncontact atomic force microscopy and Kelvin probe force microscopy investigations of organolead tribromide perovskite single crystals | |
Benjamin et al. | Temperature dependence of excitonic and biexcitonic decay rates in colloidal nanoplatelets by time-gated photon correlation | |
Ling et al. | Carrier transport performance of Cd0. 9Zn0. 1Te detector by direct current photoconductive technology | |
Cadiz et al. | All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence | |
Cao et al. | Current state-of-the-art characterization methods for probing defect passivation towards efficient perovskite solar cells | |
CN102136520A (zh) | 太赫兹单光子探测器及其探测方法 | |
Höglund et al. | Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices | |
Eremchev et al. | Detection of Single Charge Trapping Defects in Semiconductor Particles by Evaluating Photon Antibunching in Delayed Photoluminescence | |
CN104614657A (zh) | 一种探测纳米结构表面俘获态密度的方法及装置 | |
CN109164071A (zh) | 一种基于Fano共振效应的双阱间隧穿特性测量方法 | |
Motojima et al. | Imaging spectroscopy diagnosis of internal electron temperature and density distributions of plasma cloud surrounding hydrogen pellet in the Large Helical Device | |
CN107490753A (zh) | 一种获取半导体材料辐射后载流子浓度重分布的方法 | |
Vittone et al. | Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy | |
Lei et al. | Accurate electronic transport characterization of B+ ion-implanted silicon wafers with self-normalized nonlinear photocarrier radiometry | |
Pershey | A Measurement of ve Appearance and νμ Disappearance Neutrino Oscillations with the NOvA Experiment | |
Hinz et al. | Nanoparticle forming reactive plasmas: a multidiagnostic approach | |
Xiao et al. | Near-field transport imaging applied to photovoltaic materials | |
Koshelev | Reduction in the Photosensitivity Contrast of Inhomogeneous n+–p (n)–p+ Structures of Silicon, Measured while Scanning the p–n Junction with Light | |
Qin et al. | A novel optical aerosol detector utilizing an optic fiber with conductive polymer coating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201110 Termination date: 20210830 |
|
CF01 | Termination of patent right due to non-payment of annual fee |