CN1091262C - 相移掩模 - Google Patents
相移掩模 Download PDFInfo
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- CN1091262C CN1091262C CN95108595A CN95108595A CN1091262C CN 1091262 C CN1091262 C CN 1091262C CN 95108595 A CN95108595 A CN 95108595A CN 95108595 A CN95108595 A CN 95108595A CN 1091262 C CN1091262 C CN 1091262C
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- Prior art keywords
- mask
- opaque patterns
- phase shift
- light intensity
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
本发明涉及一种相移掩模,目的是修正位于掩模周围部分的不透光图形,由此补偿掩模周围部分当光通过掩模后光强相对减小引起的光强偏差。本发明保证光刻胶膜的图形临界尺寸的均匀度,这样就保证了半导体元器件的可靠性和生产效率。
Description
本发明涉及一种用于半导体制备工艺之一的光刻工艺中的掩模的制备方法,尤其涉及一种采用高分辨率相移材料的相移掩模。
半导体制备工艺之一的光刻工艺是一项利用掩模和步进光刻机在一被涂覆在晶片表面的光刻胶膜上刻划指定图形的技术。光刻工艺中使用相移掩模获得分辨率好于由用铬膜制成的普通掩模获得的分辨率,这样使得能获得高集成度半导体器件所需的超微图形。
参见图1,可用来简单地解释相移材料。如图1所示,从由相移材料1获得的曝光光强分布曲线2可以看到,在具有0℃到180℃相交的相移材料1的侧边缘其曝光强度减小了,还可以看到,使用正性光刻胶膜在相移材料的侧边缘形成了光刻胶图形。
附图2给出了传统的相移掩模的横剖面视图和通过相移掩模曝光的光强分布曲线,一相移掩模是将铬3和相移材料1形成在石英4上,相移材料1不仅覆盖一铬图形和与其最邻近的铬图形之间的间隙,而且覆盖上述两铬图形的指定部位。
相移材料1的侧边缘在铬膜上发生0℃到180℃的相变,从而有这样的优点,即补偿了因只采用铬膜3所引起的分辨率的降低。
如附图2所示,光通过掩模周围部分的光强2′小于光通过掩模中部的光强2″,这样,使光刻胶膜的中心图形和周围图形之间产生图形的不同临界尺寸。
因此,本发明的一个目的在于提供一种相移掩模以补偿某一部分的光强,该部分是当光通过掩模后其光强比其他部位光强相对减小的部分。
为了达到上述目的,本发明在一相移掩模中在位于该掩模周围部分的不透光图形(BlackoutPatten)的指定部位形成微小间隙,该周围部分是光通过该掩模后光强会相对减弱的部分,该间隙的宽度允许光干涉而不会投射出图形。上述的相移掩模具有这样的结构,将多个不透光图形以规则的间隔形成在基板上,并形成相移材料图形,该相移材料图形不仅覆盖一不透光图形和与其最临近的不透光图形之间的间隙,而且覆盖上述两个不透光图形的指定部位。
本发明的另一个目的在于,在一相移掩模中在位于该掩模周围部分的不透光图形之中形成内或外不透光图形,该内或外不透光图形比其他不透光图形厚,使该内或外不透光图形侧边缘上产生不规则反射,以补偿光强差,该周围部分是光通过掩模后光强相对减小的部分。上述相移掩模具有这样的结构,将多个不透光图形以规则的间隔形成在基板上,并形成相移材料图形,该相移材料图形不仅覆盖不透光图形和与其最临近不透光图形之间的间隙,而且覆盖上述两个不透光图形的指定部分。
本发明的上述及其他目的、特征和优点通过以下结合附图的详细描述将清楚地被理解。
图1表示由相移材料决定的曝光的光强分布曲线;
图2表示传统的相移掩模横剖面图和曝光的光强分布曲线;
图3表示本发明为补偿掩模周围部分光强的一个实施例的相移掩模横剖面图和光强分布曲线;
图4A和图4B表示本发明为补偿掩模周围部分光强的又一个实施例的相移掩模横剖面图;
图5给出本发明的又一个实施例的相移掩模横剖面图;
附图中的标号1表示相移材料,标号2、2′、2″表示光强分布曲线,标号3表示铬图形,而标号4表示石英。
图3表示本发明的一个实施例的相移掩模的横剖面图和光强分布曲线。如图3所示,在一相移掩模周围部分的铬膜图形处形成微间隙,此周围部分是光通过掩模后光强会相对减小的部分,该微间隙的大小使得它不能产生图形投影。在该相移掩模中,光通过形成在铬膜内的微间隙(a)时发生干涉,这样可以提高光强分布(b)并补偿了光刻胶图形临界尺寸的差值。
图4A和图4B表示本发明另一实施例的相移掩模的横剖面图。如图4A和图4B所示,在位于光通过掩模后光强会减小的掩模周围部分的图形之中的内或外铬图形(即不透光图形)厚于其他铬图形,这样导致厚铬图形的侧边缘不规则反射,可补偿差值。
如图5所示,设计过程中,在光通过掩模后光强会减小的掩模周围部分的铬图形3被减小ΔX宽度,这样就补偿了光强在相移掩模周围部分的光强的差值。
上述本发明的相移掩模保证光刻胶膜图形的临界尺寸的均匀度,这样就提高了元器件的可靠性和效率。
尽管为说明本发明,只公开了优选实施例,但是本领域的技术人员会懂得,在不背离权利要求所公开的本发明的原则和范围的情况下,可以对本发明进行改变、增加或替换。
Claims (1)
1、一相移掩模,具有这样的结构,将多个不透光图形以规则的间隔形成在掩模基板上,并形成相移材料,该相移材料不仅覆盖一不透光图形和与其最临近的不透光图形之间的间隙,而且覆盖上述两个不透光图形的指定部分,该相移掩模包括:
在位于该掩模周围部分的不透光图形之中形成内或外不透光图形,该内或外不透光图形比其它不透光图形厚,使该内或外不透光图形侧边缘上产生不规则反射,以补偿光强差,该周围部分是光通过掩模后光强相对减小的部分。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1994-14494 | 1994-06-23 | ||
KR199414494 | 1994-06-23 | ||
KR1019940014494A KR0143707B1 (ko) | 1994-06-23 | 1994-06-23 | 마스크 가장자리에서 투과되는 광의 강도를 보상하기 위한 위상반전 마스크 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1115417A CN1115417A (zh) | 1996-01-24 |
CN1091262C true CN1091262C (zh) | 2002-09-18 |
Family
ID=19386131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN95108595A Expired - Fee Related CN1091262C (zh) | 1994-06-23 | 1995-06-23 | 相移掩模 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5635314A (zh) |
KR (1) | KR0143707B1 (zh) |
CN (1) | CN1091262C (zh) |
GB (1) | GB2291218B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6638663B1 (en) | 2000-01-20 | 2003-10-28 | Agere Systems Inc. | Phase-shifting mask and semiconductor device |
US6582800B2 (en) | 2000-01-20 | 2003-06-24 | Free-Flow Packaging International, Inc. | Method for making pneumatically filled packing cushions |
US6436608B1 (en) | 2000-01-20 | 2002-08-20 | Agere Systems Guardian Corp. | Lithographic method utilizing a phase-shifting mask |
US7063919B2 (en) * | 2002-07-31 | 2006-06-20 | Mancini David P | Lithographic template having a repaired gap defect method of repair and use |
JP2004251969A (ja) * | 2003-02-18 | 2004-09-09 | Renesas Technology Corp | 位相シフトマスク、位相シフトマスクを用いたパターンの形成方法および電子デバイスの製造方法 |
US7282461B2 (en) | 2003-09-04 | 2007-10-16 | Agere Systems, Inc. | Phase-shifting mask and semiconductor device |
US7588869B2 (en) * | 2003-12-30 | 2009-09-15 | Lg Display Co., Ltd. | Divided exposure method for making a liquid crystal display |
CN101393387B (zh) * | 2007-09-17 | 2010-11-10 | 中芯国际集成电路制造(上海)有限公司 | 掩膜板及其制造方法 |
CN101398629B (zh) * | 2007-09-30 | 2010-11-10 | 中芯国际集成电路制造(上海)有限公司 | 曝光修正方法 |
CN101923278B (zh) * | 2009-06-17 | 2012-01-04 | 复旦大学 | 一种光刻工艺中移相掩模版的建模方法 |
CN110161799B (zh) * | 2018-02-11 | 2020-08-04 | 京东方科技集团股份有限公司 | 一种相移掩模板、阵列基板、其制备方法及显示装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0773477B1 (en) * | 1990-09-21 | 2001-05-30 | Dai Nippon Printing Co., Ltd. | Process for producing a phase shift photomask |
JP3104284B2 (ja) * | 1991-05-20 | 2000-10-30 | 株式会社日立製作所 | パターン形成方法 |
JP3204798B2 (ja) * | 1992-07-17 | 2001-09-04 | 株式会社東芝 | 露光用マスク |
US5380609A (en) * | 1992-07-30 | 1995-01-10 | Dai Nippon Printing Co., Ltd. | Method for fabricating photomasks having a phase shift layer comprising the use of a positive to negative resist, substrate imaging and heating |
-
1994
- 1994-06-23 KR KR1019940014494A patent/KR0143707B1/ko not_active IP Right Cessation
-
1995
- 1995-06-20 GB GB9512504A patent/GB2291218B/en not_active Expired - Fee Related
- 1995-06-21 US US08/492,746 patent/US5635314A/en not_active Expired - Fee Related
- 1995-06-23 CN CN95108595A patent/CN1091262C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB9512504D0 (en) | 1995-08-23 |
GB2291218A (en) | 1996-01-17 |
KR960002503A (ko) | 1996-01-26 |
US5635314A (en) | 1997-06-03 |
KR0143707B1 (ko) | 1998-08-17 |
GB2291218B (en) | 1998-08-05 |
CN1115417A (zh) | 1996-01-24 |
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