CN109116686A - 一种dmd多区域激光投影***及曝光方法 - Google Patents
一种dmd多区域激光投影***及曝光方法 Download PDFInfo
- Publication number
- CN109116686A CN109116686A CN201811151981.4A CN201811151981A CN109116686A CN 109116686 A CN109116686 A CN 109116686A CN 201811151981 A CN201811151981 A CN 201811151981A CN 109116686 A CN109116686 A CN 109116686A
- Authority
- CN
- China
- Prior art keywords
- dmd
- mask plate
- image
- exposure
- control system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000010586 diagram Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811151981.4A CN109116686B (zh) | 2018-09-29 | 2018-09-29 | 一种dmd多区域激光投影***及曝光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811151981.4A CN109116686B (zh) | 2018-09-29 | 2018-09-29 | 一种dmd多区域激光投影***及曝光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109116686A true CN109116686A (zh) | 2019-01-01 |
CN109116686B CN109116686B (zh) | 2021-05-07 |
Family
ID=64857084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811151981.4A Active CN109116686B (zh) | 2018-09-29 | 2018-09-29 | 一种dmd多区域激光投影***及曝光方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109116686B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109960113A (zh) * | 2019-05-07 | 2019-07-02 | 苏州源卓光电科技有限公司 | 光刻机的投图***及消除曝光过程中产生的拖影的方法 |
CN110456612A (zh) * | 2019-07-02 | 2019-11-15 | 苏州源卓光电科技有限公司 | 一种高效率投影光刻成像***及曝光方法 |
CN110930316A (zh) * | 2019-10-24 | 2020-03-27 | 中山新诺科技股份有限公司 | 灰度图像的处理曝光方法、装置、***和设备 |
CN111025858A (zh) * | 2019-12-27 | 2020-04-17 | 合肥众群光电科技有限公司 | 一种实现超高速曝光的设备 |
CN114734717A (zh) * | 2022-04-06 | 2022-07-12 | 深圳市先地图像科技有限公司 | 一种tiff图像曝光方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102207690A (zh) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | 一种多slm曝光和数据处理方法 |
JP2014168040A (ja) * | 2013-01-30 | 2014-09-11 | Hitachi High-Technologies Corp | パターン形成方法及び装置、露光装置並びに表示用パネル製造方法 |
CN106023069A (zh) * | 2016-05-31 | 2016-10-12 | 西安嵌牛电子科技有限公司 | 一种基于视频流的多dmd曝光方法 |
CN107065441A (zh) * | 2016-12-31 | 2017-08-18 | 江苏九迪激光装备科技有限公司 | 一种激光直写数据处理***及处理方法 |
CN108073043A (zh) * | 2016-11-07 | 2018-05-25 | 俞庆平 | 一种直写式丝网制版***的光均匀性补偿方法 |
-
2018
- 2018-09-29 CN CN201811151981.4A patent/CN109116686B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102207690A (zh) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | 一种多slm曝光和数据处理方法 |
JP2014168040A (ja) * | 2013-01-30 | 2014-09-11 | Hitachi High-Technologies Corp | パターン形成方法及び装置、露光装置並びに表示用パネル製造方法 |
CN106023069A (zh) * | 2016-05-31 | 2016-10-12 | 西安嵌牛电子科技有限公司 | 一种基于视频流的多dmd曝光方法 |
CN108073043A (zh) * | 2016-11-07 | 2018-05-25 | 俞庆平 | 一种直写式丝网制版***的光均匀性补偿方法 |
CN107065441A (zh) * | 2016-12-31 | 2017-08-18 | 江苏九迪激光装备科技有限公司 | 一种激光直写数据处理***及处理方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109960113A (zh) * | 2019-05-07 | 2019-07-02 | 苏州源卓光电科技有限公司 | 光刻机的投图***及消除曝光过程中产生的拖影的方法 |
CN110456612A (zh) * | 2019-07-02 | 2019-11-15 | 苏州源卓光电科技有限公司 | 一种高效率投影光刻成像***及曝光方法 |
CN110930316A (zh) * | 2019-10-24 | 2020-03-27 | 中山新诺科技股份有限公司 | 灰度图像的处理曝光方法、装置、***和设备 |
CN110930316B (zh) * | 2019-10-24 | 2023-09-05 | 中山新诺科技股份有限公司 | 灰度图像的处理曝光方法、装置、***和设备 |
CN111025858A (zh) * | 2019-12-27 | 2020-04-17 | 合肥众群光电科技有限公司 | 一种实现超高速曝光的设备 |
CN114734717A (zh) * | 2022-04-06 | 2022-07-12 | 深圳市先地图像科技有限公司 | 一种tiff图像曝光方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109116686B (zh) | 2021-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109116686A (zh) | 一种dmd多区域激光投影***及曝光方法 | |
JP3254248B2 (ja) | パターニング装置 | |
CN209297103U (zh) | 数字化双面光刻或曝光*** | |
CN107561876A (zh) | 一种新型无掩膜光刻***及其工艺流程 | |
JP4114184B2 (ja) | 多重露光描画装置および多重露光描画方法 | |
CN102207690A (zh) | 一种多slm曝光和数据处理方法 | |
US7248333B2 (en) | Apparatus with light-modulating unit for forming pattern | |
CN106527057B (zh) | 一种适用于曲面手机玻璃的激光直写方法 | |
KR102546102B1 (ko) | 노광 장치 및 노광 방법 | |
JPH10112579A (ja) | レジスト露光方法及びその露光装置 | |
CN108062005A (zh) | 一种直写式丝网制版***的拼接改善方法 | |
CN105974748A (zh) | 一种新型高功率高速无掩模光刻*** | |
WO2019218676A1 (zh) | 数字化光刻***和方法 | |
CN108073043A (zh) | 一种直写式丝网制版***的光均匀性补偿方法 | |
CN102445861A (zh) | 一种位置触发扫描方式的光刻机***及方法 | |
CN108062006A (zh) | 一种自动上下版的直写式丝网制版***及制版方法 | |
CN102902164B (zh) | 直写式光刻机在步进式曝光时的二维拼接处理方法 | |
CN108062003A (zh) | 一种直写式丝网制版***及制版方法 | |
CN1643453A (zh) | 打印大数据流的方法和装置 | |
US10911629B2 (en) | Contact image sensor and image scanning device | |
KR101653213B1 (ko) | 디지털 노광 방법 및 이를 수행하기 위한 디지털 노광 장치 | |
CN103226294A (zh) | 一种提高曝光图形位置精度的光刻***及方法 | |
CN110531590A (zh) | 一种直写式光刻机拼接方法 | |
CN206523740U (zh) | 一种直写式丝网制版设备 | |
WO2004051378A1 (ja) | パターン転写方法及び露光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhang Lei Inventor before: Liu Jinwu Inventor before: Zhang Shurong Inventor before: Xu Taopeng Inventor before: Zhang Lei |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 215000 Room 102, building C5, Ting LAN lane, Suzhou Industrial Park, Jiangsu, China, 192 Patentee after: Yuanzhuo Micro Nano Technology (Suzhou) Co.,Ltd. Address before: 215000 Room 102, building C5, Ting LAN lane, Suzhou Industrial Park, Jiangsu, China, 192 Patentee before: ADVANCED MICRO OPTICS.INC |
|
CP01 | Change in the name or title of a patent holder |