CN109037371A - (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate - Google Patents
(In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate Download PDFInfo
- Publication number
- CN109037371A CN109037371A CN201811150381.6A CN201811150381A CN109037371A CN 109037371 A CN109037371 A CN 109037371A CN 201811150381 A CN201811150381 A CN 201811150381A CN 109037371 A CN109037371 A CN 109037371A
- Authority
- CN
- China
- Prior art keywords
- substrate
- pillar
- grown
- gan nano
- nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 113
- 239000002061 nanopillar Substances 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 238000005422 blasting Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 235000019441 ethanol Nutrition 0.000 claims description 5
- 238000000879 optical micrograph Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000005416 organic matter Substances 0.000 claims description 2
- 238000009790 rate-determining step (RDS) Methods 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The invention discloses (In) GaN nano-pillars being grown on Al substrate and the preparation method and application thereof, including the AlN buffer layer being grown on Al substrate, (In) GaN nano-pillar for being grown on AlN buffer layer.The problem of Al substrate thermal conductivity wherein used is high, at low cost, advantageously accounts for device heat dissipation, reduces device cost；Secondly, the Al substrate conduction performance that the present invention uses is good, the preparation process of device can be simplified directly as the electrode of device；The method of (In) GaN nano-pillar that present invention preparation is grown on Al substrate, it is simple with growth technique, the cheap advantage of preparation cost, and (In) GaN nano-pillar prepared by the present invention has the characteristics that crystal quality is good, defect concentration is low and stress relaxation, can be used for preparing light emitting diode, photodetector and solar battery etc..
Description
Technical field
The present invention relates to (In) GaN nano-pillar, in particular to (In) the GaN nano-pillar and its preparation that are grown on Al substrate
Method and application.
Background technique
Group III-nitride (In) GaN electricity, optics and acoustically have extremely excellent property, in recent years by
Extensive concern.(In) GaN is direct band gap material, and chemical and thermal stability is good, thermal conductivity is high, electron mobility is high, breakdown
Dielectric strength is high, is widely used in light emitting diode (LED), laser (LD), high electron mobility transistor (HEMT) etc..
Compared with thin-film material, (In) GaN nano-pillar has high specific surface area, and high specific surface area makes due to nanometer
The lattice strain that lattice mismatch generates between column and substrate, by effective relaxation, it is close to can significantly reduce threading dislocation in nano-pillar side wall
Degree obtains the nanometer column material of high-crystal quality, the piezoelectric polarization effect and raising device performance of effective suppression device.Due to ruler
Very little to be obviously reduced, (In) GaN nano-pillar provides new approach for the following size for reducing device and system.In addition, (In) GaN
Nano-pillar quantum effect, interfacial effect, bulk effect, in terms of also show more novel characteristics so that
It has huge prospect in basic physics and new technique application aspect.
Currently, film and nano-pillar GaN base device is mainly based upon sapphire, single crystal Si substrate is grown.And they
Often there is thermal conductivities lower (sapphire 25W/mK, Si monocrystalline 156W/mK), the larger (sapphire 1014 of resistivity
Ω cm adulterates the Ω of Si~10 cm), the problems such as Sapphire Substrate is at high cost.When substrate thermal conductivity is lower, it is difficult GaN base
The heat that device generates when working is discharged in time, leads to thermal accumlation, the final performance for influencing device.When the biggish indigo plant of resistivity
The substrate material of jewel, single crystalline Si as (In) GaN nano-pillar base device when preparing electrode needs that more metal layers are deposited
Ohmic contact is formed, the complexity of device technology is increased.Therefore find it is a kind of it is cheap, thermal conductivity is high, electric conductivity
Good substrate material is applied to growth (In) GaN nano-pillar, great to (In) GaN nano-pillar base device application value.
Summary of the invention
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of the present invention is to provide one kind to be grown in Al substrate
On (In) GaN nano-pillar, the substrate of the nano-pillar is at low cost, thermal conductivity is high, conducts electricity very well.The thermal conductivity of metal Al substrate
Height, the heat generated when (In) GaN nano-pillar base device can work transfers out in time to be come, and helps to solve dissipating for device
Heat problem.Secondly, metal Al substrate can simplify device without preparing Ohm contact electrode directly as the electrode of device
Technique.Again, metal Al substrate price is relatively low, advantageously reduces device cost.
Another object of the present invention is to provide the preparation method of (In) the GaN nano-pillar being grown on Al substrate with answer
With.The study found that the nanometer rod structure for being reduced in size to nanometer range formation of (In) GaN epitaxial layer is deformation relaxation, it is several
There is no defect, crystal quality is high.
The purpose of the present invention is achieved through the following technical solutions.
(In) the GaN nano-pillar being grown on Al substrate, including Al substrate 1, the AlN buffer layer being grown on Al substrate 1
2, (In) the GaN nano-pillar 3 being grown on AlN buffer layer.
Preferably, the Al substrate is common Al metal.
Preferably, the AlN buffer layer with a thickness of 5~50nm, it is raw when the thickness of AlN buffer layer reaches 5~50nm
The stress of long (In) GaN nano-pillar is released.In addition, (In) GaN nano-pillar makes to strain due to its biggish specific surface area
In nano-pillar side wall by effective relaxation, be conducive to (In) GaN nano-pillar that high quality is grown on Al substrate.
Preferably, described (In) the GaN nano-pillar includes GaN, InGaN, InN nano-pillar.
Preferably, the height of described (In) the GaN nano-pillar is 60~2000nm, and diameter is 15~500nm.
The method for preparing above-described (In) GaN nano-pillar being grown on Al substrate, comprising the following steps:
(1) selection of substrate: Al substrate is used；
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing；
(3) substrate cleans: the Al substrate after step (2) polishing treatment is cleaned by ultrasonic, to remove remained on surface organic matter,
Finally dried up with high-purity drying nitrogen；
(4) substrate annealing is handled: Al substrate obtained by step (3) being put into reaction chamber, is served as a contrast at 500~650 DEG C to Al
Bottom is made annealing treatment, to obtain smooth surface；
(5) preparation of AlN buffer layer: Al underlayer temperature obtained by rate-determining steps (4) is 450~650 DEG C, revolving speed is 5~
Then 10r/min nitrogenizes Al substrate surface using Nitrogen plasma source, the power of plasma source is 200~450W,
Nitrogen flow is 1~5sccm, and AlN buffer layer is obtained on Al substrate, is conducive to the growth for carrying out subsequent (In) GaN nano-pillar；
(6) preparation of (In) GaN nano-pillar: using molecular beam epitaxial growth technique, and control underlayer temperature is 450~650
DEG C, revolving speed is 5~10r/min, and Ga line flow is 1.0 × 10-8~1.5 × 10-7Torr, In line flow are 1.0 × 10-8
~5 × 10-7Torr, nitrogen flow are 1~5sccm, and plasma source power is 200~450W, in the AlN that step (5) obtains
(In) GaN nano-pillar is grown on buffer layer.
Preferably, step (3) ultrasonic cleaning be Al substrate acetone, ethyl alcohol, water is cleaned by ultrasonic to 2 respectively~
5min。
Preferably, the time of step (4) described annealing is 0.5~1 hour.
Preferably, the time of step (5) described nitridation is 10~50 minutes.
Above-described (In) GaN nano-pillar being grown on Al substrate is applied to prepare light emitting diode, photodetection
Device and solar battery.
Compared with prior art, the present invention has the following advantages and beneficial effects:
(1) present invention uses common Al metal as substrate, serves as a contrast relative to other substrate materials, such as sapphire, single crystalline Si
Bottom, cheaper advantageously reduce device manufacturing cost.
(2) Al metal substrate has very high thermal conductivity, is 217.7W/mK.Using Al metal as (In) GaN nano-pillar
Substrate material, the heat that generates, which rapidly transfers out, when (In) GaN nano-pillar base device can be worked comes, and helps to solve
The heat dissipation problem of device increases the service life of device.
(3) substrate material of the Al metal as growth (In) GaN nano-pillar, can be directly as the electrode of device.In this way, nothing
Multiple layer metal need to be deposited and prepare Ohm contact electrode, simplify device preparation technology.
(4) present invention uses Al metal as substrate, directly nitrogenizes to substrate surface, can form AlN buffer layer,
It is simple for process without being previously deposited one layer of metal Al film.The formation of AlN buffer layer is conducive to GaN nanometers of subsequent (In)
The forming core of column and growth, also, when AlN buffer layer thickness reaches 5~50nm, (In) GaN nano-pillar is in relaxed state；Separately
Outside, (In) GaN nano-pillar is conducive to strain, by effective relaxation, in Al in nano-pillar side wall due to its biggish specific surface area
(In) GaN nano-pillar of high quality is grown in metal substrate.
(5) (In) GaN nano-pillar that the present invention is prepared, crystal quality is high, and dislocation density is low.On the one hand, AlN is buffered
The use of layer, reduces the lattice mismatch between Al substrate and (In) GaN, can effectively reduce the formation of dislocation, be conducive to height
The growth of quality (In) GaN nano-pillar；On the other hand, (In) GaN nanometers of rod structures are deformation relaxations, almost without defect,
Crystal quality is high.(In) the GaN nano-pillar for the high-crystal quality being finally prepared, significantly reduces carrier non-radiative recombination
Probability, the nitride device such as device efficiency of laser, light emitting diode and solar battery can be increased substantially.
Detailed description of the invention
Fig. 1 is the schematic cross-section that embodiment 1 is grown in the InGaN nano-pillar on Al substrate.
Fig. 2 is the SEM top view that embodiment 1 is grown in InGaN nano-pillar on Al substrate.
Specific embodiment
Below with reference to embodiment, the present invention is described in further detail, embodiments of the present invention are not limited thereto.
Embodiment 1
It is grown in the preparation method of the InGaN nano-pillar on Al substrate, comprising the following steps:
(1) selection of substrate: using common Al metal as substrate.
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Al substrate acetone, ethyl alcohol, deionized water being cleaned by ultrasonic each 3 minutes respectively, finally with height
Pure drying nitrogen drying.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, it is small to carry out annealing 1 to Al substrate at 550 DEG C
When.
(5) formation of AlN buffer layer: underlayer temperature control is at 500 DEG C, and substrate revolving speed is 10r/min, then using nitrogen etc.
Plasma source nitrogenizes Al substrate surface, and the power of plasma source is 300W, nitrogen flow 2sccm, nitrogenizes 10 points
Zhong Hou obtains AlN buffer layer.
(6) preparation of high quality InGaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 500 DEG C, lining
Bottom revolving speed is 10r/min, and Ga line flow is 8 × 10-8Torr, In line flow are 3 × 10-7Torr, nitrogen flow are
2sccm, plasma source power 250W, growth obtains InN nano-pillar on the AlN buffer layer that step (5) obtains.
As shown in Figure 1, the present embodiment is grown in the schematic cross-section of the InGaN nano-pillar on Al substrate, including Al substrate
1, the AlN buffer layer 2 being grown on Al substrate 1, the InGaN nano-pillar 3 being grown on AlN buffer layer 2.
As shown in Fig. 2, the present embodiment is grown in the scanning electron microscope top view of InGaN nano-pillar on Al substrate.
Embodiment 2
It is grown in the preparation method of the InN nano-pillar on Al substrate, comprising the following steps:
(1) selection of substrate: using common Al metal as substrate.
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Al substrate acetone, ethyl alcohol, deionized water being cleaned by ultrasonic each 2 minutes respectively, finally with height
Pure drying nitrogen drying.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, it is small to carry out annealing 1 to Al substrate at 500 DEG C
When.
(5) formation of AlN buffer layer: underlayer temperature control is at 450 DEG C, and substrate revolving speed is 5r/min, then using nitrogen etc.
Plasma source nitrogenizes Al substrate surface, and the power of plasma source is 200W, nitrogen flow 1sccm, nitrogenizes 50 points
Zhong Hou obtains AlN buffer layer.
(6) preparation of high quality InGaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 450 DEG C, lining
Bottom revolving speed is 10r/min, and Ga line flow is 1.0 × 10-8Torr, In line flow are 5 × 10-7Torr, nitrogen flow are
5sccm, plasma source power 450W, growth obtains InN nano-pillar on the AlN buffer layer that step (5) obtains.
Embodiment 3
It is grown in the preparation method of the GaN nano-pillar on Al substrate, comprising the following steps:
(1) selection of substrate: using common Al metal as substrate.
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: be cleaned by ultrasonic each 5 minutes to substrate respectively with acetone, ethyl alcohol, deionized water, finally use
High-purity drying nitrogen drying.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, it is small to carry out annealing 0.5 to Al substrate at 650 DEG C
When.
(5) formation of AlN buffer layer: underlayer temperature control is at 650 DEG C, and substrate revolving speed is 10r/min, then using nitrogen etc.
Plasma source nitrogenizes Al substrate surface, and the power of plasma source is 450W, nitrogen flow 5sccm, nitrogenizes 10 points
Zhong Hou obtains AlN buffer layer.
(6) preparation of high-quality GaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 650 DEG C, substrate
Revolving speed is 5r/min, and In line flow is 1.0 × 10-8Torr, Ga line flow are 1.5 × 10-7Torr, nitrogen flow are
1.0sccm, plasma source power 200W, growth obtains GaN nano-pillar on the AlN buffer layer that step (5) obtains.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. (In) the GaN nano-pillar being grown on Al substrate, which is characterized in that including Al substrate (1), be grown in Al substrate (1)
On AlN buffer layer (2), (In) the GaN nano-pillar (3) being grown on AlN buffer layer (2).
2. (In) GaN nano-pillar according to claim 1 being grown on Al substrate, which is characterized in that the Al substrate
For common Al metal.
3. (In) GaN nano-pillar according to claim 1 being grown on Al substrate, which is characterized in that the AlN is slow
Rush layer with a thickness of 5 ~ 50 nm.
4. (In) GaN nano-pillar according to claim 1 being grown on Al substrate, which is characterized in that (In)
GaN nano-pillar includes GaN, InGaN, InN nano-pillar.
5. (In) GaN nano-pillar according to claim 4 being grown on Al substrate, which is characterized in that (In)
The height of GaN nano-pillar is 60 ~ 2000 nm, and diameter is 15 ~ 500 nm.
6. the method for preparing described in any item (In) the GaN nano-pillars being grown on Al substrate of claim 1-5, feature exist
In, comprising the following steps:
(1) selection of substrate: Al substrate is used；
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperates optical microphotograph sem observation substrate table
Face is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing；
(3) substrate cleans: the Al substrate after step (2) polishing treatment being cleaned by ultrasonic, to remove remained on surface organic matter, finally
It is dried up with high-purity drying nitrogen；
(4) substrate annealing is handled: Al substrate obtained by step (3) is put into reaction chamber, at 500 ~ 650 oC to Al substrate into
Row annealing, to obtain smooth surface；
(5) preparation of AlN buffer layer: Al underlayer temperature obtained by rate-determining steps (4) is 450 ~ 650 oC, and revolving speed is 5 ~ 10 r/
Then min nitrogenizes Al substrate surface using Nitrogen plasma source, the power of plasma source is 200 ~ 450 W, nitrogen
Flow is 1 ~ 5 sccm, and AlN buffer layer is obtained on Al substrate；
(6) preparation of (In) GaN nano-pillar: using molecular beam epitaxial growth technique, and control underlayer temperature is 450 ~ 650 oC,
Revolving speed is 5 ~ 10 r/min, and Ga line flow is 1.0 × 10-8~1.5×10-7 Torr, In line flow are 1.0 × 10-8~5×
10-7 Torr, nitrogen flow are 1 ~ 5 sccm, and plasma source power is 200 ~ 450 W, in the AlN buffering that step (5) obtains
(In) GaN nano-pillar is grown on layer.
7. preparation method according to claim 6, which is characterized in that step (3) ultrasonic cleaning is to use Al substrate
Acetone, ethyl alcohol, water are cleaned by ultrasonic 2 ~ 5 min respectively.
8. preparation method according to claim 6, which is characterized in that the time of step (4) described annealing is 0.5 ~ 1
Hour.
9. preparation method according to claim 6, which is characterized in that the time of step (5) described nitridation is 10 ~ 50 points
Clock.
10. described in any item (In) the GaN nano-pillars being grown on Al substrate of claim 1-5 are applied to prepare light-emitting diodes
Pipe, photodetector and solar battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811150381.6A CN109037371A (en) | 2018-09-29 | 2018-09-29 | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811150381.6A CN109037371A (en) | 2018-09-29 | 2018-09-29 | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109037371A true CN109037371A (en) | 2018-12-18 |
Family
ID=64615170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811150381.6A Pending CN109037371A (en) | 2018-09-29 | 2018-09-29 | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109037371A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110284198A (en) * | 2019-07-22 | 2019-09-27 | 南京大学 | A kind of molecular beam epitaxy accretion method controlling GaN nano wire structure and pattern |
| CN110747506A (en) * | 2019-10-22 | 2020-02-04 | 华南理工大学 | Transition metal doped InxGa1-xN nano column and preparation method and application thereof |
| CN111036263A (en) * | 2019-12-10 | 2020-04-21 | 华南理工大学 | InGaN nanorod @ Ti-Ni nanoparticle composite structure on Si substrate and preparation method and application thereof |
| CN111074344A (en) * | 2019-12-10 | 2020-04-28 | 华南理工大学 | (In) GaN nano-column grown on GaAs substrate and preparation method and application thereof |
| CN112951956A (en) * | 2021-03-12 | 2021-06-11 | 广东先导稀材股份有限公司 | GaN-based LED epitaxial wafer and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060281205A1 (en) * | 2005-06-10 | 2006-12-14 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing nitride-based semiconductor device |
| US20090079034A1 (en) * | 2007-09-26 | 2009-03-26 | Wang Nang Wang | Non-polar iii-v nitride semiconductor and growth method |
| CN101443887A (en) * | 2006-03-10 | 2009-05-27 | Stc.Unm公司 | Pulsed growth of GAN nanowires and applications in group III nitride semiconductor substrate materials and devices |
| CN107046088A (en) * | 2017-02-06 | 2017-08-15 | 华南理工大学 | GaN nano-pillars being grown on Si (111) substrate and its preparation method and application |
| CN108206130A (en) * | 2018-01-11 | 2018-06-26 | 华南理工大学 | It is grown in indium nitride nano-pillar epitaxial wafer in aluminum substrates and preparation method thereof |
| CN209000923U (en) * | 2018-09-29 | 2019-06-18 | 华南理工大学 | The InGaN nano-pillar being grown on Al substrate |
-
2018
- 2018-09-29 CN CN201811150381.6A patent/CN109037371A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060281205A1 (en) * | 2005-06-10 | 2006-12-14 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing nitride-based semiconductor device |
| CN101443887A (en) * | 2006-03-10 | 2009-05-27 | Stc.Unm公司 | Pulsed growth of GAN nanowires and applications in group III nitride semiconductor substrate materials and devices |
| US20090079034A1 (en) * | 2007-09-26 | 2009-03-26 | Wang Nang Wang | Non-polar iii-v nitride semiconductor and growth method |
| CN107046088A (en) * | 2017-02-06 | 2017-08-15 | 华南理工大学 | GaN nano-pillars being grown on Si (111) substrate and its preparation method and application |
| CN108206130A (en) * | 2018-01-11 | 2018-06-26 | 华南理工大学 | It is grown in indium nitride nano-pillar epitaxial wafer in aluminum substrates and preparation method thereof |
| CN209000923U (en) * | 2018-09-29 | 2019-06-18 | 华南理工大学 | The InGaN nano-pillar being grown on Al substrate |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110284198A (en) * | 2019-07-22 | 2019-09-27 | 南京大学 | A kind of molecular beam epitaxy accretion method controlling GaN nano wire structure and pattern |
| CN110747506A (en) * | 2019-10-22 | 2020-02-04 | 华南理工大学 | Transition metal doped InxGa1-xN nano column and preparation method and application thereof |
| CN111036263A (en) * | 2019-12-10 | 2020-04-21 | 华南理工大学 | InGaN nanorod @ Ti-Ni nanoparticle composite structure on Si substrate and preparation method and application thereof |
| CN111074344A (en) * | 2019-12-10 | 2020-04-28 | 华南理工大学 | (In) GaN nano-column grown on GaAs substrate and preparation method and application thereof |
| CN111074344B (en) * | 2019-12-10 | 2021-05-14 | 华南理工大学 | (In) GaN nano-column grown on GaAs substrate and preparation method and application thereof |
| CN112951956A (en) * | 2021-03-12 | 2021-06-11 | 广东先导稀材股份有限公司 | GaN-based LED epitaxial wafer and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109037371A (en) | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate | |
| CN104037287B (en) | LED epitaxial wafer grown on Si substrate and preparation method thereof | |
| US11626491B2 (en) | Indium nitride nanopillar epitaxial wafer grown on aluminum foil substrate and preparation method of indium nitride nanopillar epitaxial wafer | |
| CN102945898B (en) | Growth AlN film on metal A g substrate and preparation method thereof, application | |
| CN103022295B (en) | Aluminum nitride film growing on silicon substrate and preparation method and application thereof | |
| US20230046307A1 (en) | Epitaxial substrate with 2d material interposer, manufacturing method, and manufacturing assembly | |
| CN103730545A (en) | Manufacturing method of AlGaN-based vertical structure deep ultraviolet LED | |
| CN103035794B (en) | A kind of growth LED on a si substrate and preparation method thereof | |
| CN106784224B (en) | The LED epitaxial wafer and preparation method thereof of growth on a glass substrate | |
| CN106374023A (en) | Nonpolar nanorod LED grown on lithium gallate substrate, and preparation method for nonpolar nanorod LED | |
| CN108321280A (en) | A kind of nonpolarity ultraviolet LED and preparation method thereof | |
| CN105826434A (en) | Diamond heat sink GaN based LED manufacturing method | |
| WO2022127093A1 (en) | V-shaped tunneling junction led epitaxial structure based on h-bn and preparation method therefor | |
| CN106257694A (en) | LED being grown on magnesium aluminate scandium substrate and preparation method thereof | |
| CN109132997A (en) | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Ti substrate | |
| US20150035123A1 (en) | Curvature compensated substrate and method of forming same | |
| CN108231545B (en) | InN nano-column epitaxial wafer grown on copper foil substrate and preparation method thereof | |
| CN209000923U (en) | The InGaN nano-pillar being grown on Al substrate | |
| CN103996764B (en) | LED epitaxial wafer growing on Ag substrate and preparing method and application of LED epitaxial wafer | |
| JP3772816B2 (en) | Gallium nitride crystal substrate, method for manufacturing the same, gallium nitride semiconductor device, and light emitting diode | |
| CN106328774A (en) | Epitaxial growth method and application of GaN film | |
| CN106505135B (en) | The InGaN/GaN multiple quantum wells and preparation method thereof of growth on a glass substrate | |
| JP2008053372A (en) | Manufacturing method of semiconductor device | |
| CN109003883A (en) | The InGaN/GaN multiple quantum wells nano-pillar and preparation method thereof being grown in silicon/graphene compound substrate | |
| CN105047769A (en) | Light emitting diode manufacturing method capable of using wet etching to carry out substrate peeling |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |