CN209000923U - The InGaN nano-pillar being grown on Al substrate - Google Patents
The InGaN nano-pillar being grown on Al substrate Download PDFInfo
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- CN209000923U CN209000923U CN201821603271.6U CN201821603271U CN209000923U CN 209000923 U CN209000923 U CN 209000923U CN 201821603271 U CN201821603271 U CN 201821603271U CN 209000923 U CN209000923 U CN 209000923U
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Abstract
The utility model discloses the InGaN nano-pillars being grown on Al substrate, including the AlN buffer layer being grown on Al substrate, the InGaN nano-pillar that is grown on AlN buffer layer.The problem of Al substrate thermal conductivity wherein used is high, at low cost, advantageously accounts for device heat dissipation, reduces device cost；Secondly, the Al substrate conduction performance that the utility model uses is good, the preparation process of device can be simplified directly as the electrode of device；The InGaN nano-pillar of the utility model has the characteristics that crystal quality is good, defect concentration is low and stress relaxation, can be used for preparing light emitting diode, photodetector and solar battery etc..
Description
Technical field
The utility model relates to InGaN nano-pillars, in particular to the InGaN nano-pillar being grown on Al substrate.
Background technique
Group III-nitride (In) GaN electricity, optics and acoustically have extremely excellent property, in recent years by
Extensive concern.(In) GaN is direct band gap material, and chemical and thermal stability is good, thermal conductivity is high, electron mobility is high, breakdown
Dielectric strength is high, is widely used in light emitting diode (LED), laser (LD), high electron mobility transistor (HEMT) etc..
Compared with thin-film material, (In) GaN nano-pillar has high specific surface area, and high specific surface area makes due to nanometer
The lattice strain that lattice mismatch generates between column and substrate, by effective relaxation, it is close to can significantly reduce threading dislocation in nano-pillar side wall
Degree obtains the nanometer column material of high-crystal quality, the piezoelectric polarization effect and raising device performance of effective suppression device.Due to ruler
Very little to be obviously reduced, (In) GaN nano-pillar provides new approach for the following size for reducing device and system.In addition, (In) GaN
Nano-pillar quantum effect, interfacial effect, bulk effect, in terms of also show more novel characteristics so that
It has huge prospect in basic physics and new technique application aspect.
Currently, film and nano-pillar GaN base device is mainly based upon sapphire, single crystal Si substrate is grown.And they
Often there is thermal conductivities lower (sapphire 25W/mK, Si monocrystalline 156W/mK), the larger (sapphire 1014 of resistivity
Ω cm adulterates the Ω of Si~10 cm), the problems such as Sapphire Substrate is at high cost.When substrate thermal conductivity is lower, it is difficult GaN
The heat that base device generates when working is discharged in time, leads to thermal accumlation, the final performance for influencing device.When resistivity is biggish
The substrate material of sapphire, single crystalline Si as (In) GaN nano-pillar base device when preparing electrode needs that multiple layer metal is deposited
Layer forms Ohmic contact, increases the complexity of device technology.Therefore find it is a kind of it is cheap, thermal conductivity is high, electric conductivity
Substrate material that can be good is applied to growth (In) GaN nano-pillar, great to (In) GaN nano-pillar base device application value.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of the prior art, the purpose of this utility model is to provide one kind to be grown in Al
InGaN nano-pillar on substrate, the substrate of the nano-pillar is at low cost, thermal conductivity is high, conducts electricity very well.The thermal conductivity of metal Al substrate
Rate is high, and the heat generated when InGaN nano-pillar base device can work transfers out in time to be come, and helps to solve dissipating for device
Heat problem.Secondly, metal Al substrate can simplify device without preparing Ohm contact electrode directly as the electrode of device
Technique.Again, metal Al substrate price is relatively low, advantageously reduces device cost.
The purpose of this utility model is achieved through the following technical solutions.
The InGaN nano-pillar being grown on Al substrate, including Al substrate 1, the AlN buffer layer 2 being grown on Al substrate 1,
The InGaN nano-pillar 3 being grown on AlN buffer layer.
Preferably, the Al substrate is common Al metal.
Preferably, the AlN buffer layer with a thickness of 5~50nm, it is raw when the thickness of AlN buffer layer reaches 5~50nm
The stress of long InGaN nano-pillar is released.In addition, InGaN nano-pillar makes strain exist due to its biggish specific surface area
Nano-pillar side wall is conducive to the InGaN nano-pillar that high quality is grown on Al substrate by effective relaxation.
Preferably, the InGaN nano-pillar includes GaN, InGaN, InN nano-pillar.
Preferably, the height of the InGaN nano-pillar is 60~2000nm, and diameter is 15~500 nm.
The method for preparing the above-described InGaN nano-pillar being grown on Al substrate, comprising the following steps:
(1) selection of substrate: Al substrate is used；
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing；
(3) substrate cleans: the Al substrate after step (2) polishing treatment is cleaned by ultrasonic, to remove remained on surface organic matter,
Finally dried up with high-purity drying nitrogen；
(4) substrate annealing is handled: Al substrate obtained by step (3) being put into reaction chamber, is served as a contrast at 500~650 DEG C to Al
Bottom is made annealing treatment, to obtain smooth surface；
(5) preparation of AlN buffer layer: Al underlayer temperature obtained by rate-determining steps (4) is 450~650 DEG C, revolving speed is 5~
Then 10r/min nitrogenizes Al substrate surface using Nitrogen plasma source, the power of plasma source is 200~450W,
Nitrogen flow is 1~5sccm, and AlN buffer layer is obtained on Al substrate, is conducive to the growth for carrying out subsequent InGaN nano-pillar；
(6) preparation of InGaN nano-pillar: using molecular beam epitaxial growth technique, and control underlayer temperature is 450~650 DEG C,
Revolving speed is 5~10r/min, and Ga line flow is 1.0 × 10-8~1.5 × 10-7Torr, In line flow are 1.0 × 10-8~5
×10-7Torr, nitrogen flow are 1~5sccm, and plasma source power is 200~450W, slow in the AlN that step (5) obtains
Rush growth InGaN nano-pillar on layer.
Preferably, step (3) ultrasonic cleaning be Al substrate acetone, ethyl alcohol, water is cleaned by ultrasonic to 2 respectively~
5min。
Preferably, the time of step (4) described annealing is 0.5~1 hour.
Preferably, the time of step (5) described nitridation is 10~50 minutes.
The above-described InGaN nano-pillar being grown on Al substrate is applied to prepare light emitting diode, photodetector
And solar battery.
Compared with prior art, the utility model has the following advantages and beneficial effects:
(1) the utility model uses common Al metal as substrate, relative to other substrate materials, such as sapphire, monocrystalline
Si substrate, cheaper advantageously reduce device manufacturing cost.
(2) Al metal substrate has very high thermal conductivity, is 217.7W/mK.Using Al metal as InGaN nano-pillar
Substrate material, the heat that generates, which rapidly transfers out, when InGaN nano-pillar base device can be worked comes, and facilitates resolver
The heat dissipation problem of part increases the service life of device.
(3) substrate material of the Al metal as growth InGaN nano-pillar, can be directly as the electrode of device.In this way, being not necessarily to
Vapor deposition multiple layer metal prepares Ohm contact electrode, simplifies device preparation technology.
(4) the AlN buffer layer of the utility model is conducive to forming core and the growth of subsequent InGaN nano-pillar, also, works as AlN
Buffer layer thickness reaches 5~50nm, and InGaN nano-pillar is in relaxed state；In addition, InGaN nano-pillar is due to its biggish ratio
Surface area makes strain in nano-pillar side wall by effective relaxation, and the InGaN for being conducive to grow high quality in Al metal substrate receives
Meter Zhu.
(5) the InGaN nano-pillar of the utility model, crystal quality is high, and dislocation density is low.On the one hand, AlN buffer layer is adopted
With reducing the lattice mismatch between Al substrate and InGaN, the formation of dislocation can be effectively reduced, be conducive to high quality InGaN
The growth of nano-pillar；On the other hand, InGaN nanometers of rod structures are deformation relaxations, and almost without defect, crystal quality is high.It is high
The InGaN nano-pillar of crystal quality, significantly reduces the probability of carrier non-radiative recombination, can increase substantially nitride device
Such as the device efficiency of laser, light emitting diode and solar battery.
Detailed description of the invention
Fig. 1 is the schematic cross-section that embodiment 1 is grown in the InGaN nano-pillar on Al substrate.
Fig. 2 is the SEM top view that embodiment 1 is grown in InGaN nano-pillar on Al substrate.
Specific embodiment
Below with reference to embodiment, the utility model is described in further detail, but the embodiments of the present invention
It is without being limited thereto.
Embodiment 1
It is grown in the preparation method of the InGaN nano-pillar on Al substrate, comprising the following steps:
(1) selection of substrate: using common Al metal as substrate.
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Al substrate acetone, ethyl alcohol, deionized water being cleaned by ultrasonic each 3 minutes respectively, finally with height
Pure drying nitrogen drying.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, it is small to carry out annealing 1 to Al substrate at 550 DEG C
When.
(5) formation of AlN buffer layer: at 500 DEG C, substrate revolving speed is 10r/min for underlayer temperature control, then uses nitrogen
Plasma source nitrogenizes Al substrate surface, and the power of plasma source is 300W, nitrogen flow 2sccm, nitridation 10
After minute, AlN buffer layer is obtained.
(6) preparation of high quality InGaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 500 DEG C, lining
Bottom revolving speed is 10r/min, and Ga line flow is 8 × 10-8Torr, In line flow are 3 × 10-7Torr, nitrogen flow are
2sccm, plasma source power are 250 W, and growth obtains InN nano-pillar on the AlN buffer layer that step (5) obtains.
As shown in Figure 1, the present embodiment is grown in the schematic cross-section of the InGaN nano-pillar on Al substrate, including Al substrate
1, the AlN buffer layer 2 being grown on Al substrate 1, the InGaN nano-pillar 3 being grown on AlN buffer layer 2.
As shown in Fig. 2, the present embodiment is grown in the scanning electron microscope top view of InGaN nano-pillar on Al substrate.
Embodiment 2
It is grown in the preparation method of the InN nano-pillar on Al substrate, comprising the following steps:
(1) selection of substrate: using common Al metal as substrate.
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: Al substrate acetone, ethyl alcohol, deionized water being cleaned by ultrasonic each 2 minutes respectively, finally with height
Pure drying nitrogen drying.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, it is small to carry out annealing 1 to Al substrate at 500 DEG C
When.
(5) formation of AlN buffer layer: underlayer temperature control is at 450 DEG C, and substrate revolving speed is 5r/min, then using nitrogen etc.
Plasma source nitrogenizes Al substrate surface, and the power of plasma source is 200W, nitrogen flow 1sccm, nitrogenizes 50 points
Zhong Hou obtains AlN buffer layer.
(6) preparation of high quality InGaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 450 DEG C, lining
Bottom revolving speed is 10r/min, and Ga line flow is 1.0 × 10-8Torr, In line flow are 5 × 10-7Torr, nitrogen flow are
5sccm, plasma source power are 450 W, and growth obtains InN nano-pillar on the AlN buffer layer that step (5) obtains.
Embodiment 3
It is grown in the preparation method of the GaN nano-pillar on Al substrate, comprising the following steps:
(1) selection of substrate: using common Al metal as substrate.
(2) substrate surface polishes: Al substrate surface being polished with diamond mud, cooperation optical microphotograph sem observation lining
Bottom surface is processed by shot blasting after not having scratch, then using the method for chemically mechanical polishing.
(3) substrate cleans: be cleaned by ultrasonic each 5 minutes to substrate respectively with acetone, ethyl alcohol, deionized water, finally use
High-purity drying nitrogen drying.
(4) substrate annealing is handled: being placed the substrate into reaction chamber, is carried out annealing 0.5 to Al substrate at 650 DEG C
Hour.
(5) formation of AlN buffer layer: at 650 DEG C, substrate revolving speed is 10r/min for underlayer temperature control, then uses nitrogen
Plasma source nitrogenizes Al substrate surface, and the power of plasma source is 450W, nitrogen flow 5sccm, nitridation 10
After minute, AlN buffer layer is obtained.
(6) preparation of high-quality GaN nano-pillar: using molecular beam epitaxial growth technique, and underlayer temperature is 650 DEG C, substrate
Revolving speed is 5r/min, and In line flow is 1.0 × 10-8Torr, Ga line flow are 1.5 × 10-7Torr, nitrogen flow are
1.0sccm, plasma source power 200W, growth obtains GaN nano-pillar on the AlN buffer layer that step (5) obtains.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiments of the present invention is not by described
The limitation of embodiment, it is made under other any spiritual essence and principles without departing from the utility model to change, modify, replacing
In generation, simplifies combination, should be equivalent substitute mode, is included within the protection scope of the utility model.
Claims (4)
1. the InGaN nano-pillar being grown on Al substrate, which is characterized in that including Al substrate (1), be grown on Al substrate (1)
AlN buffer layer (2), the InGaN nano-pillar (3) being grown on AlN buffer layer (2).
2. the InGaN nano-pillar according to claim 1 being grown on Al substrate, which is characterized in that the Al substrate is
Common Al metal.
3. the InGaN nano-pillar according to claim 1 being grown on Al substrate, which is characterized in that the AlN buffering
Layer with a thickness of 5 ~ 50 nm.
4. the InGaN nano-pillar according to claim 1 being grown on Al substrate, which is characterized in that the InGaN receives
The height of meter Zhu is 60 ~ 2000 nm, and diameter is 15 ~ 500 nm.
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| CN201821603271.6U CN209000923U (en) | 2018-09-29 | 2018-09-29 | The InGaN nano-pillar being grown on Al substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037371A (en) * | 2018-09-29 | 2018-12-18 | 华南理工大学 | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037371A (en) * | 2018-09-29 | 2018-12-18 | 华南理工大学 | (In) the GaN nano-pillar and the preparation method and application thereof being grown on Al substrate |
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