CN109031777A - Quantum dot diaphragm and preparation method thereof and backlight module - Google Patents

Quantum dot diaphragm and preparation method thereof and backlight module Download PDF

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Publication number
CN109031777A
CN109031777A CN201810766823.3A CN201810766823A CN109031777A CN 109031777 A CN109031777 A CN 109031777A CN 201810766823 A CN201810766823 A CN 201810766823A CN 109031777 A CN109031777 A CN 109031777A
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China
Prior art keywords
quantum dot
layer
barrier layer
quantum
diaphragm
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CN201810766823.3A
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Chinese (zh)
Inventor
马卜
程方亮
王允军
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Suzhou Xingshuo Nanotech Co Ltd
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Suzhou Xingshuo Nanotech Co Ltd
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Publication of CN109031777A publication Critical patent/CN109031777A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Laminated Bodies (AREA)
  • Luminescent Compositions (AREA)

Abstract

The invention discloses a kind of quantum dot diaphragm and preparation method thereof and backlight modules, the quantum dot diaphragm includes the first barrier layer set gradually, the first quantum dot layer, basal layer, the second quantum dot layer, the second barrier layer, first quantum dot layer includes the first quantum dot being dispersed in polymer material, second quantum dot layer includes the second quantum dot for being dispersed in polymer material, first barrier layer carries the first quantum dot layer, and the second barrier layer carries second quantum dot layer.The quantum dot diaphragm changes the quantum dot diaphragm structure design of the prior art, avoids self-absorption phenomenon caused by different quantum dot mixing.The backlight module includes the quantum dot diaphragm.

Description

Quantum dot diaphragm and preparation method thereof and backlight module
Cross reference to related applications
Entitled " the quantum dot diaphragm and preparation method thereof, backlight module " submitted this application claims on 07 21st, 2017 The priority of Chinese patent application " 201710604041.5 ", all the contents of the application are herein incorporated by reference.
Technical field
This application involves quantum dot field, in particular to a kind of quantum dot diaphragm and preparation method thereof and backlight module.
Background technique
It can be by the colour gamut of LCD by original using quantum dot diaphragm collocation excitation light source compared to common white light LEDs 70%NTSC is improved to 100%NTSC or more, to show better color saturation.
Existing quantum dot diaphragm is made of two barrier film intermediate course quantum dot layers, is in sandwich structure, is made work Skill, which is specifically included that, is applied as film for two barrier films and macromolecule glue including quantum dot by coating process, and cured It forms.
Summary of the invention
The purpose of the present invention is to provide a kind of novel quantum dot diaphragms, different with the quantum dot diaphragm for solving the prior art The problem of self-absorption between quantum dot.
The present invention provides a kind of quantum dot diaphragms comprising the first barrier layer, the first quantum dot layer, base set gradually Bottom, the second quantum dot layer, the second barrier layer, first quantum dot layer include first be dispersed in polymer material Quantum dot, second quantum dot layer include the second quantum dot for being dispersed in polymer material, and first barrier layer is held First quantum dot layer is carried, second barrier layer carries second quantum dot layer.
Preferably, the base layer thickness range is 25 microns -100 microns, first quantum dot layer and described second Quantum dot layer thickness range is 20 microns -50 microns.
Preferably, the thickness range of first barrier layer and second barrier layer is 200 nanometers -2 microns.
Preferably, the basal layer is the polyester film formed by polyethylene terephthalate.
Preferably, first barrier layer and second barrier layer include inorganic coating and protective coating.
Preferably, first barrier layer and second barrier layer include alternate organic layer and inorganic coating, and Protective coating.
Preferably, the inorganic coating is alumina layer or silicon oxide layer.
Preferably, the thickness of the quantum dot diaphragm is no more than 120 microns.
Preferably, the thickness of the quantum dot diaphragm is no more than 100 microns.
Preferably, the green light quantum point and red light quantum point include at least one of following substance: cadmium selenide, vulcanization Cadmium, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
The invention also provides a kind of backlight module, the backlight module includes quantum dot diaphragm as described above.
The invention also provides a kind of preparation methods of quantum dot diaphragm, comprising the following steps: obtains green quantum dispensing Liquid and red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in polyesters basal layer Upper and lower surfaces are formed by curing the composite construction of the first quantum dot layer, polyesters basal layer, the second quantum dot layer；Institute The upper and lower surfaces for stating composite construction deposit the first barrier layer and the second barrier layer respectively.
Preferably, the deposition is realized by magnetron sputtering, plasma chemical vapor deposition or atomic vapor deposition.
Novel quantum dot diaphragm of the invention changes the quantum dot diaphragm structure design of the prior art, avoids difference Self-absorption phenomenon caused by quantum dot mixes.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of quantum dot diaphragm in the present invention.
Identical component has used identical appended drawing reference in the accompanying drawings.Attached drawing only symbolically shows the reality of the application Apply scheme.
Specific embodiment
Below in conjunction with embodiment of the present invention, technical solution in the embodiment of the present invention is described in detail, and is shown So, described embodiment is only some embodiments of the invention, rather than whole embodiments.Based in the present invention Embodiment, those of ordinary skill in the art's every other implementation obtained without making creative work Mode belongs to the scope of the present invention.
With reference to Fig. 1, the invention discloses a kind of novel quantum dot diaphragms 100, including the first barrier layer set gradually 102, the first quantum dot layer 104, basal layer 106, the second quantum dot layer 108, the second barrier layer 110.First quantum dot layer 104 packet The first green light quantum point 114 being dispersed in polymer material 112 is included, the second quantum dot layer 108 includes being dispersed in The second red light quantum point 116 in polymer material 112.First barrier layer 102 is deposited on the first quantum dot layer 104, and second Barrier layer 110 is deposited on the second quantum dot layer 108.Preferably, the first quantum dot can be green light quantum point, the second quantum Point is red light quantum point.
First barrier layer 102 is identical with 110 structure of the second barrier layer.First barrier layer 102 includes for obstructing water oxygen Inorganic coating 118 and protective coating 120.Inorganic coating 118 is positioned adjacent to the side of the first quantum dot layer 104, protective coating 120 are arranged far from the side of the first quantum dot layer 104.Inorganic coating 118 refers to the water oxygen barrier energy being made of inorganic material The strong barrier layer of power, inorganic material achieve the effect that effectively to stop aqueous vapor and oxygen by the dense arrangement in atomic level.? In one preferred embodiment, inorganic coating 118 includes aluminium oxide, aluminium nitride, aluminum oxynitride, titanium oxide, titanium nitride, nitrogen oxygen Change at least one of titanium, zirconium oxide, zirconium nitride, nitrogen oxidation zirconium, silica, silicon carbide, silicon oxynitride, graphene.At one In preferred embodiment, inorganic coating 118 is alumina layer or silicon oxide layer.The deposition method of inorganic coating 118 is preferred Including injection, sputtering, vapor deposition, vacuum deposition, plasma chemical vapor deposition or atomic layer deposition.In a preferred implementation In mode, inorganic coating 118 is formed by magnetron sputtering.The material of protective coating 120 is preferably acrylic resin, with a thickness of 8- 12 microns.
Protective coating 120 includes poly- silicone resin, poly epoxy resin, polyurethane, polycarbonate, poly- fluororesin, poly- methyl-prop E pioic acid methyl ester, polyformaldehyde, polyethylene, Vingon, ethylene-vinyl alcohol copolymer, polyvinyl acetate, polytetrafluoroethylene (PTFE), Polyvinyl butyral, polypropylene, polyamide, polyethylene terephthalate, polyethylene naphthalate or poly- to benzene Dioctyl phthalate butanediol ester, polyacrylate, polystyrene acrylonitrile resin, poly- Colombia's resin, poly- CR-39 resin, poly- OZ Series plastics, poly- TS-26 resin, poly- APO resin, poly- MR resin, poly- MH resin, poly- NAS resin, poly- ADC resin, poly- TOPAS At least one of resin, poly- ARTON resin.Preferably, the diffusion particle of 5%-10%, particle are added in protective coating 120 Partial size is 5-10 microns.Second barrier layer 110 is identical as the composed structure of the first barrier layer 102.
Basal layer 106 is preferably polyester material, it is preferable that basal layer 106 is by polyethylene terephthalate shape At polyester film.Preferably, the diffusion particle of 5%-10% is added in basal layer 106, particle diameter is 5-10 microns.Substrate Layer not only act as the effect for separate red green quantum dot layer, also make the first quantum dot layer, basal layer, the second quantum dot layer formation answer The deposition that structure preferably adapts to inorganic barrier layer is closed, avoids leading to quantum dot because quantum dot layer is softer, deposition stress is excessive Diaphragm curling and problem of Cracking.
In a preferred embodiment, the thickness of quantum dot diaphragm 100 is no more than 120 microns, and wherein basal layer 106 is thick Spending range is 25 microns~100 microns, the first quantum dot layer 104 and 110 thickness range of the second quantum dot layer be 20 microns~ 50 microns.Preferably, the thickness of quantum dot diaphragm 100 is no more than 100 microns.It is highly preferred that the thickness of quantum dot diaphragm 100 is not More than 80 microns.
Green light quantum point 114 and red light quantum point 116 include silicon class quantum dot, IIB-VIA compounds of group quantum dot, The mixing of IIIA-VA compounds of group quantum dot, VA-VIA compounds of group quantum dot, perovskite quantum dot and above-mentioned various quantum dots One of object.IIB-VIA compounds of group quantum dot include from by CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、 ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、 CdZnSe、CdZnTe、CdHgS、 CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、 One selected in the group of CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe composition Kind.IIIA-VA compounds of group quantum dot include from by GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs、GaPAs、AlNP、AlNAs、AlPAs、 InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、 The one kind selected in the group of GaInNAs, GaInPAs, InAlNP, InAlNAs and InAlPAs composition.A preferred implementation side In formula, quantum dot is core-shell structure.In a preferred embodiment, green light quantum point and red light quantum point include following substance At least one of: cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
The polymer material 112 of dispersion quantum dot preferably includes to be modified poly- silicone resin, modified polyurethane, modified poly-epoxy tree At least one of rouge, modified polypropene acid resin.More there is choosing, it is good to oil-soluble quantum dot dissolubility that polymer material is selected from And the poly- epoxy modified acrylic resin that water oxygen obstructing capacity is strong.Preferably, also it is added with 5%-10%'s in polymer material Diffusion particle, particle diameter are 5-10 microns.
To avoid the irregularities of luminescent layer from leading to inorganic 118 defect of coating, lead to the water oxygen barrier property of inorganic coating 118 Can be insufficient, in one preferred embodiment, one layer of smooth finish (figure is provided between quantum dot layer and inorganic coating 118 In be not shown), the surface roughness of smooth finish is less than 100 nanometers.Smooth finish can by chemical vapour deposition technique, etc. from The methods of daughter coating preparation.
Backlight module, display device or light emitting device can be prepared using quantum dot diaphragm 100 of the invention.Display dress It sets including TV, mobile phone, wrist-watch etc..Quantum dot diaphragm 100 of the invention is preferably used on mobile phone.In backlight module, quantum Point diaphragm is arranged on the light direction of LED.
The invention also provides a kind of preparation methods of quantum dot diaphragm 100, comprising the following steps: obtains green light quantum point Glue and red light quantum point glue；Green light quantum point glue and red light quantum point glue are respectively coated in polyesters basal layer Upper and lower surfaces, be formed by curing the first quantum dot layer 104, polyesters basal layer 106, second quantum dot layer 108 and answer Close structure；Smooth finish, inorganic coating, organic layer, inorganic coating, protection are sequentially depositing in the upper and lower surface of the composite construction Coating forms the first barrier layer 102 and the second barrier layer 110.Preferably, deposition passes through magnetron sputtering, Both Plasma Chemical Vapor Deposition is realized.
In a specific embodiment, the first barrier layer 102 is identical with 110 structure of the second barrier layer, the first barrier layer 102 include the inorganic coating 118 and protective coating 120 for obstructing water oxygen.Inorganic coating 118 is positioned adjacent to the first quantum dot The side of layer 104, protective coating 120 are arranged far from the side of the first quantum dot layer 104.Inorganic coating 118 refers to by inorganic The strong barrier layer of the water oxygen obstructing capacity that material is constituted, inorganic material reach effective blocking by the dense arrangement in atomic level The effect of aqueous vapor and oxygen.In one preferred embodiment, inorganic coating 118 includes aluminium oxide, aluminium nitride, nitrogen oxidation Aluminium, titanium oxide, titanium nitride, titanium oxynitrides, zirconium oxide, zirconium nitride, nitrogen oxidation zirconium, silica, silicon carbide, silicon oxynitride, graphite At least one of alkene.In one preferred embodiment, inorganic coating 118 is alumina layer or silicon oxide layer.
Although inventor has done more detailed elaboration to technical solution of the present invention and has enumerated, it should be understood that for For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious , cannot all be detached from the essence of spirit of that invention, the term occurred in the present invention be used for elaboration to technical solution of the present invention and Understand, can not be construed as limiting the invention.

Claims (10)

1. a kind of quantum dot diaphragm, which is characterized in that including set gradually the first barrier layer, the first quantum dot layer, basal layer, Second quantum dot layer, the second barrier layer, first quantum dot layer include the first quantum being dispersed in polymer material Point, second quantum dot layer include the second quantum dot for being dispersed in polymer material, and first barrier layer carries institute The first quantum dot layer is stated, second barrier layer carries second quantum dot layer.
2. quantum dot diaphragm according to claim 1, which is characterized in that the base layer thickness range be 25 microns~ 100 microns, first quantum dot layer and the second quantum dot layer thickness range are 20 microns~50 microns.
3. quantum dot diaphragm according to claim 1 or 2, which is characterized in that first barrier layer and second resistance The thickness range of interlayer is 0.2 micron~2 microns.
4. quantum dot diaphragm according to claim 1, which is characterized in that the basal layer is polyester film.
5. quantum dot diaphragm according to claim 1, which is characterized in that first barrier layer and second barrier layer It include inorganic coating and protective coating；
Preferably, first barrier layer and second barrier layer include alternate organic layer and inorganic coating, and protection Coating；
More preferably, the inorganic coating is alumina layer or silicon oxide layer.
6. quantum dot diaphragm according to claim 1, which is characterized in that the thickness of the quantum dot diaphragm is no more than 120 Micron.
7. quantum dot diaphragm according to claim 1, which is characterized in that the green light quantum point and red light quantum point include At least one of following substance: cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide, indium phosphide, indium arsenide, perovskite.
8. a kind of backlight module, which is characterized in that the backlight module includes any quantum dot film in claim 1-7 Piece.
9. a kind of preparation method of quantum dot diaphragm, which comprises the following steps:
Obtain the first quantum dot glue and the second quantum dot glue；
The first quantum dot glue and the second quantum dot glue are respectively coated in the two sides of basal layer；
Solidify the first quantum dot glue and the second quantum dot glue, forms the first quantum dot layer, the second quantum dot layer；Institute It states and is respectively formed the first barrier layer and the second barrier layer on the outside of the first quantum dot layer and the second quantum dot layer.
10. preparation method according to claim 9, which is characterized in that first barrier layer and the second barrier layer pass through Magnetron sputtering, plasma chemical vapor deposition or atomic vapor deposition are respectively in first quantum dot layer and the second quantum dot Layer is formed.
CN201810766823.3A 2017-07-21 2018-07-13 Quantum dot diaphragm and preparation method thereof and backlight module Pending CN109031777A (en)

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