CN106908990A - A kind of quantum dot film and preparation method thereof - Google Patents
A kind of quantum dot film and preparation method thereof Download PDFInfo
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- CN106908990A CN106908990A CN201610153730.4A CN201610153730A CN106908990A CN 106908990 A CN106908990 A CN 106908990A CN 201610153730 A CN201610153730 A CN 201610153730A CN 106908990 A CN106908990 A CN 106908990A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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Abstract
The present invention relates to quantum dot technical field of membrane, more particularly to a kind of quantum dot film with water oxygen barrier layer.In order to improve the high-temp resisting high-humidity resisting performance and antioxygenic property of quantum dot film, the present invention provides a kind of quantum dot film.The quantum dot film includes quantum dot layer, water oxygen barrier layer, PET barrier layers, and protective layer；The water oxygen barrier layer includes upper water oxygen barrier layer and lower water oxygen barrier layer；The PET barrier layers include upper PET barrier layers and lower PET barrier layers；The protective layer includes up-protective layer and lower protective layer；The quantum dot film includes up-protective layer, upper PET barrier layers, upper water oxygen barrier layer, quantum dot layer, lower water oxygen barrier layer, lower PET barrier layers and lower protective layer successively；The quantum dot layer includes adhesive, aerosil particles and diffusion particle, and quantum dot particle is included in the aerosil particles.The quantum dot film has preferable high-temp resisting high-humidity resisting performance and antioxygenic property such that it is able to improve the service life of display.
Description
Technical field
The present invention relates to quantum dot technical field of membrane, more particularly to a kind of quantum dot with water oxygen barrier layer
Film and preparation method thereof.
Background technology
Nowadays the LED for being used on mobile electronic device be all using one group of light emitting diode of equipment back side as
Light source, or use blue-ray LED and fluorescent RE powder to be engaged to reach the effect of display different color.
The colour gamut of traditional LED-backlit liquid crystal only has 70%NTSC, and color representation power is general.Quantum dot membrane technology
It is that fluorescent material, quantum dot of many trillion under film protection instead of using quantum dot in traditional components
Will replace LED backlight modules in itself that the blue light that about 2/3rds are sent by backlight is converted into
Feux rouges and green glow.Compared with the white light that traditional LED sends, there are more red, green, blue coloured light through filter
Color chips, thus display is more bright, color is more rich.Quantum dot film can realize full gamut, improve color
Domain is to more than 100%NTSC.But, quantum dot film high-temp resisting high-humidity resisting and inoxidizability are poor, can reduce
The service life of display.It is the big weight for preparing quantum dot film to improve high-temp resisting high-humidity resisting and antioxygenic property
Point.
The content of the invention
In order to improve the high-temp resisting high-humidity resisting performance and antioxygenic property of quantum dot film, the present invention provides a kind of amount
Son point film and preparation method thereof.The quantum dot film has preferable high-temp resisting high-humidity resisting performance and antioxygenic property,
So as to improve the service life of display.The present invention is intercepted by preparing a kind of water oxygen of high barrier
Layer is used for quantum dot film, to improve the water oxygen rejection rate and service life of quantum dot film, reduces quantum dot and declines
Subtract, reduce the brightness of backlight module and the decay of colour gamut.
In order to solve the above-mentioned technical problem, the present invention provides following technical proposals：
The present invention provides a kind of quantum dot film, and the quantum dot film includes quantum dot layer, water oxygen barrier layer,
PET barrier layers, and protective layer；The water oxygen barrier layer includes upper water oxygen barrier layer and lower water oxygen barrier layer；
The PET barrier layers include upper PET barrier layers and lower PET barrier layers；The protective layer includes upper protection
Layer and lower protective layer；The quantum dot film includes up-protective layer, upper PET barrier layers, the resistance of upper water oxygen successively
Interlayer, quantum dot layer, lower water oxygen barrier layer, lower PET barrier layers and lower protective layer；The quantum dot layer
Including adhesive, aerosil particles and diffusion particle, quantum dot particle is included in the aerosil particles.Quantum
Point particle abbreviation quantum dot.
Further, the aerosil particles and diffusion particle are dispersed in the adhesive of quantum dot layer.
Further, the aerosil particles have micropore, and quantum dot particle is adsorbed with the micropore.
Further, the PET barrier layers are mainly made up of PET.
Further, the quantum dot film that the present invention is provided is in upper and lower symmetrical structure, and a middle Rotating fields are amount
Son point layer.Upper water oxygen barrier layer and lower water oxygen barrier layer are referred to as upper and lower water oxygen barrier layer, and upper water oxygen is intercepted
Layer or lower water oxygen barrier layer may be simply referred to as water oxygen barrier layer.Upper PET barrier layers and lower PET barrier layers are referred to as
It is upper and lower PET barrier layers.Upper PET barrier layers or lower PET barrier layers may be simply referred to as PET barrier layers.
Up-protective layer and lower protective layer are referred to as lower protective layer.Up-protective layer or lower protective layer may be simply referred to as protection
Layer.
Further, in described quantum dot film, the quantum dot layer includes following components：Adhesive
(with referred to as adhesive) 68-79%, aerosil particles 10-15%, diffusion particle 10-15%, light trigger
1-2%；The content of the quantum dot particle is the 5-10% of the aerosil particles；The percentage composition is attached most importance to
Amount percentage composition.
Further, the thickness of the quantum dot layer is 100-200 μm, and the thickness of a water oxygen barrier layer is
10-20nm, a thickness for PET barrier layers is 50-150 μm, and a thickness for protective layer is 5-20 μm.
Further, the thickness of one PET barrier layers is 100 μm.
Further, the thickness of the quantum dot layer is 100-150 μm.
Further, the thickness of one protective layer is 15 μm.
Further, the content of the quantum dot particle is the 5-8% of the aerosil particles.
Further, the PET barrier layers are transparent PET base material.Further, the PET is intercepted
Layer choosing is from existing PET base material.
Further, in described quantum dot film, the material of the protective layer includes following components：Glue
Glutinous agent 80-85%, resist blocking and that particle 15-20%；The percentage composition is weight percentage.
Further, in described quantum dot film, the adhesive in the protective layer is selected from polyurethane third
One kind in olefin(e) acid ester gum water, epoxy acrylate glue or polyester acrylate glue.Further,
Adhesive in the protective layer uses UV solidified resins.
Further, the resist blocking and that particle is selected from polymethyl methacrylate (PMMA) particle, gathers
One kind in ester particle, makrolon particle, polystyrene particle or silicon dioxide granule or at least two
The combination planted.
Further, the particle diameter of the resist blocking and that particle is 5-12 μm.
The material of the quantum dot particle is selected from the combination of one or more in semi-conducting material.
The aperture of the micropore in the aerosil particles is 5-20nm, and quantum dot is adsorbed or is wrapped in micropore.
Further, in described quantum dot film, in quantum dot layer, the adhesive is selected from poly- ammonia
One kind in ester acrylate glue, epoxy acrylate glue or polyester acrylate glue；
Further, the diffusion particle is selected from polymethyl methacrylate particle, polyester granules, poly- carbon
One kind or at least two combination in acid esters particle or silicon dioxide granule.
Further, the diffusion particle is the group of polymethyl methacrylate particle and silicon dioxide granule
Close, wherein, the mass ratio of polymethyl methacrylate particle and silicon dioxide granule is 6:1-8:1.
Further, the diffusion particle is the combination of polyester granules and silicon dioxide granule, wherein, gather
The mass ratio of ester particle and silicon dioxide granule is 6:1.
Further, the diffusion particle is the combination of makrolon particle and silicon dioxide granule, wherein,
The mass ratio of makrolon particle and silicon dioxide granule is 4:1-6:1.
Further, the diffusion particle is polymethyl methacrylate particle, polyester granules and titanium dioxide
The combination of silicon particle, wherein, polymethyl methacrylate particle, polyester granules and silicon dioxide granule
Mass ratio is 2:2:1.
Further, the diffusion particle is polymethyl methacrylate particle, makrolon particle and two
The combination of silicon oxide particle, wherein, polymethyl methacrylate particle, makrolon particle and titanium dioxide
The mass ratio of silicon particle is 2:2:1.
Further, the diffusion particle is the combination of polymethyl methacrylate particle and polyester granules,
Wherein, the mass ratio of polymethyl methacrylate particle and polyester granules is 1:1.
Further, in described quantum dot film, the particle diameter of the aerosil particles is 1-20 μm, diffusion
The particle diameter of particle is 1-35 μm.
Further, the particle diameter of the aerosil particles is 1-20 μm, and the particle diameter of diffusion particle is 1-20 μm.
Further, acrylic resin of the adhesive in the quantum dot layer from UV solidifications.
Further, in described quantum dot film, the water oxygen barrier layer is silicon oxide film, institute
State silicon oxide film to be prepared from by ald mode, the thickness of the silicon oxide film is
10-20nm。
Present invention deposited silicon oxide film by the way of ald (ALD).Si oxide is thin
Film is deposited usually using the mode of PECVD and PVD.The silicon oxide film that ALD modes are deposited is uniform
Degree is more preferable, and performance is more excellent.
Further, in described quantum dot film, the quantum dot layer includes following components：Adhesive
74-78%, aerosil particles 10-12%, diffusion particle 10-12%, light trigger 2%；The quantum dot
The content of grain is the 5-8% of the aerosil particles；The particle diameter of the aerosil particles is 10-20 μm, spreads grain
The particle diameter of son is 10-20 μm；The percentage composition is weight percentage.
Further, in described quantum dot film, the PET barrier layers are transparent PET.Further
, the protective layer coats a surface of transparent PET.
The present invention also provides the preparation method of the water oxygen barrier layer in described quantum dot film, and the method includes
Following step：
(1) using PET barrier layers as substrate；
(2) using chlorosilane or amino silane as presoma, with O3It is reaction source, depositing temperature is
50-220 DEG C, the deposited silicon oxide film on PET barrier layers.Silicon oxide film is water oxygen barrier layer.
PET barrier layers are collectively referred to as water oxygen Obstruct membrane with water oxygen barrier layer.
Further, in above-mentioned steps (2), depositing temperature is high to react faster, but due to base material PET
Fusing point at 250-260 DEG C, selection lower temperature is more beneficial for the stability of base material.Depositing temperature is preferred
50-180℃.Further, depositing temperature is 100 DEG C.
The chemical formula of chlorosilane is HnSiCl4-n.Wherein, n is selected from 0,1,2 or 3.
The chemical formula of amino silane is H2NCH2CH2CH2Si(OC2H5)3。
Formed Si oxide mechanism be mainly base material PET surface decompose leave-a SiH3Group,
-SiH3Group is by O3Molecular oxidation is-Si (OH)3Group, then dehydrating condensation turns into silicon oxide film.
The present invention also provides the preparation method of described quantum dot film, and methods described comprises the steps：
(1) water oxygen barrier layer is prepared by ald mode in the upper surface of PET barrier layers；
(2) lower surface in PET barrier layers is coated with resist blocking and that particle as protective layer；
(3) adhesive containing aerosil particles and diffusion particle is coated with water oxygen barrier layer, in adhesive
Top covers one layer of PET barrier layer for having water oxygen barrier layer and protective layer, and adhesive is intercepted with water oxygen
Layer is bonded.
(4) solidified by UV, obtain quantum dot film.
Resist blocking and that particle in protective layer has diffusion and anti-stick dual-use function, is mainly used in increasing quantum dot
The screening performance and resistance to blocking energy of film.
Compared with existing quantum dot film, the quantum dot film that the present invention is provided has high barrier water oxygen barrier layer,
The water oxygen rejection rate and service life of quantum dot film are improve, while the service life of backlight module is improved,
Quantum dot decay is reduced, reduces the brightness of backlight module and the decay of colour gamut, so as to improve making for display
Use the life-span.The quantum dot film containing water oxygen barrier layer that the present invention is provided has water and oxygen barrier property higher,
Brightness is smaller with the decay of colour gamut, luminous efficiency stabilization.The preparation method of the quantum dot film that the present invention is provided
Process is simple, it is easy to operate.
Brief description of the drawings
A kind of structural representation of quantum dot film that Fig. 1 is provided for the present invention.
Wherein 1 is quantum dot layer, and 2 is water oxygen barrier layer, and 3 is PET barrier layers, and 4 is protective layer.
Specific embodiment
For the functional character and advantage that are more readily understood structure of the invention and to be reached, hereafter this is sent out
Bright preferred embodiment, and coordinate schema to be described below in detail：
As shown in figure 1, the quantum dot film that the present invention is provided is in upper and lower symmetrical structure, quantum dot layer 1 is included,
Upper and lower water oxygen barrier layer 2, upper and lower PET barrier layers 3, upper lower protective layer 4.
The preparation method of the water oxygen Obstruct membrane that the present invention is provided is comprised the following steps：
(1) using PET barrier layers as substrate.
(2) using chlorosilane or amino silane as presoma.With O3It is reaction source, depositing temperature is
50-220 DEG C, the deposited amorphous state silicon oxide film on PET.
The preparation method of the quantum dot film that the present invention is provided is comprised the following steps：
(1) water oxygen barrier layer is prepared by ald mode in PET barrier layers substrate upper surface；
(2) lower surface in PET base material is coated with resist blocking and that particle as protective layer；
(3) it is coated with the water oxygen barrier layer of PET base material upper surface containing aerosil particles and diffusion particle
Adhesive, covers one layer of PET with water oxygen barrier layer and protective layer above adhesive, adhesive with
Water oxygen barrier layer is bonded.
(4) solidified by UV, obtain quantum dot film.
Water oxygen barrier layer in embodiment is silicon oxide film, and the silicon oxide film is by atomic layer deposition
Product mode is prepared from.
The briliancy of the quantum dot film obtained in embodiment uses Fu Shida BM-7 brightness photometers, by quantum dot film peace
On 14 cun of backlight modules of blue backlight, it is back light to use blue led lamp bar.By light-emitting area
3 × 39 areas are divided into, each briliancy in 9 designated areas of measurement draws center briliancy peace
Equal briliancy.
During center briliancy refers to 9 regions, the brightness value of central area.Average luminance refers to 9 regions
Briliancy arithmetic average.
Colour gamut test and the calculating of the quantum dot film in embodiment use BM-7 brightness photometers, take one 14 cun
The diaphragm of size, is placed in 14 cun of backlight modules of Blue backlight, and test center's point is distinguished with brightness photometer
Chromaticity coordinate, NTSC value is calculated by known set formula.
In embodiment, water oxygen vapor permeability is measured after connate water oxygen barrier layer on PET barrier layers, used
The water oxygen vapor permeability tester of MOCOM companies, water steaming is tested at 23 DEG C, under conditions of 90%RH
Vapor permeability and OTR oxygen transmission rate.Moisture-vapor transmission is lower with the numerical value of OTR oxygen transmission rate, represents quantum
Point film water oxygen rejection rate is higher, water oxygen barrier is better.
Weatherability test in embodiment is that quantum dot film is placed on into 85 DEG C, the hot and humid environment of 85%RH
In, after persistently placing 1000 hours, detect its briliancy and colour gamut.(weatherability is surveyed to obtain briliancy attenuation
Briliancy difference before examination and after test is divided by the briliancy before weatherability test) and colour gamut attenuation (weatherability
Colour gamut difference before test and after test is divided by the colour gamut before weatherability test).It is resistance to by 1000 hours
Brightness decay is smaller with colour gamut decay after the test of time property, represents that the high-temp resisting high-humidity resisting performance of quantum dot film is better,
Represent that the antioxygenic property of quantum dot film is better.Brightness is smaller with the decay of colour gamut, represents backlight module hair
Light efficiency is more stable.
Embodiment 1
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, a protective layer thickness is 15 μm, protection
The material of layer is 5-12 μm of PMMA by 80% urethane acrylate adhesive and 20% particle diameter
Particle is constituted.One thickness of PET barrier layers is 100 μm.The thickness of upper water oxygen barrier layer is 10nm,
Depositing temperature is 50 DEG C.The thickness of lower water oxygen barrier layer is 10nm, and depositing temperature is 50 DEG C, measures it
Water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 100 μm.The material of quantum dot layer includes
15% particle diameter is 1 μm of aerosil particles, and the weight of quantum dot is the 10% of aerosil particles weight, 15%
Particle diameter be 1 μm of polymethyl methacrylate particle and silicon dioxide granule, polymethyl methacrylate
The mass ratio of particle and silicon dioxide granule is 8:1,68% urethane acrylate glue, and 2%
Diphenylthanedione light trigger.The correlated performance test result of gained quantum dot film is shown in Table 1.
Embodiment 2
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 85%
Urethane acrylate adhesive and 15% particle diameter for 5-12 μm PMMA particles constitute.PET
Barrier layer thickness is 100 μm, and the thickness of water oxygen barrier layer is 10nm, and depositing temperature is 220 DEG C, measurement
Its water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 100 μm.Quantum dot layer includes 12%
Particle diameter be 5 μm of aerosil particles, quantum dot content is the 10% of aerosil particles, and 12% particle diameter is 5 μm
Polymethyl methacrylate particle and silicon dioxide granule, polymethyl methacrylate particle and titanium dioxide
The mass ratio of silicon particle is 6:1,74% urethane acrylate glue, and 2% diphenyl second two
Ketone photoinitiator.The correlated performance test result of gained quantum dot film is shown in Table 1.
Embodiment 3
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 80%
Urethane acrylate adhesive and 20% particle diameter for 5-12 μm PMMA particles constitute.PET
Barrier layer thickness is 100 μm, and the thickness of water oxygen barrier layer is 10nm, and depositing temperature is 80 DEG C, measures it
Water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 150 μm.Wherein quantum dot layer is included
12% particle diameter is 10 μm of aerosil particles, and quantum dot content is the 8% of aerosil particles, 12% particle diameter
For 10 μm of polyester granules and silicon dioxide granule, the mass ratio of polyester granules and silicon dioxide granule is
6:1,74% acrylic resin and 2% diphenylthanedione light trigger.The phase of gained quantum dot film
Close the performance test results and be shown in Table 1.
Embodiment 4
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 80%
Urethane acrylate adhesive and 20% particle diameter for 5-12 μm PMMA particles constitute.PET
Barrier layer thickness is 100 μm, and the thickness of water oxygen barrier layer is 10nm, and depositing temperature is 100 DEG C, measurement
Its water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 150 μm.Quantum dot layer includes 10%
Particle diameter be 20 μm of aerosil particles, quantum dot content is the 5% of aerosil particles, and 10% particle diameter is 20 μm
Polyester granules and silicon dioxide granule, the mass ratio of polyester granules and silicon dioxide granule is 6:1,78%
Epoxy acrylate glue, and 2% diphenylthanedione light trigger.The phase of gained quantum dot film
Close the performance test results and be shown in Table 1.
Embodiment 5
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 80%
Urethane acrylate adhesive and 20% particle diameter for 5-12 μm PMMA particles constitute.PET
Barrier layer thickness is 100 μm, and the thickness of water oxygen barrier layer is 10nm, and depositing temperature is 150 DEG C, measurement
Its water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 150 μm.Quantum dot layer includes 10%
Particle diameter be 20 μm of aerosil particles, quantum dot content is the 5% of aerosil particles, and 10% particle diameter is 20 μm
Makrolon particle and silicon dioxide granule, the mass ratio of makrolon particle and silicon dioxide granule is
4:1,78% urethane acrylate glue and 2% diphenylthanedione light trigger.Gained quantum
The correlated performance test result of point film is shown in Table 1.
Embodiment 6
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 85%
Urethane acrylate adhesive and 15% particle diameter for 5-12 μm PMMA particles constitute.PET
Barrier layer thickness is 100 μm, and the thickness of water oxygen barrier layer is 15nm, and depositing temperature is 120 DEG C, measurement
Its water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 150 μm.Quantum dot layer includes 12%
Particle diameter be 10 μm of aerosil particles, quantum dot content is the 8% of aerosil particles, and 12% particle diameter is 10 μm
Makrolon particle and silicon dioxide granule, the mass ratio of makrolon particle and silicon dioxide granule is
6:1,74% polyester acrylate glue, and 2% diphenylthanedione light trigger.Gained quantum
The correlated performance test result of point film is shown in Table 1.
Embodiment 7
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 85%
Epoxy acrylate adhesive and 15% particle diameter for 5-12 μm PMMA particles constitute.PET hinders
Compartment thickness is 100 μm, and the thickness of water oxygen barrier layer is 15nm, and depositing temperature is 180 DEG C, measures it
Water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 100 μm.Quantum dot layer includes 10%
Particle diameter be 20 μm of aerosil particles, quantum dot content is the 5% of aerosil particles, and 10% particle diameter is 20 μm
Polymethyl methacrylate particle, 78% polyester acrylate glue, and 2% diphenyl second two
Ketone photoinitiator.The correlated performance test result of gained quantum dot film is shown in Table 1.
Embodiment 8
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 85%
Epoxy acrylate adhesive and 15% particle diameter for 5-12 μm PMMA particles constitute.PET hinders
Compartment thickness is 100 μm, and the thickness of water oxygen barrier layer is 20nm, and depositing temperature is 50 DEG C, measures its water
OTR oxygen transmission rate, the results are shown in Table 1.The thickness of quantum dot layer is 100 μm.Quantum dot layer includes 12% grain
Footpath is 10 μm of aerosil particles, and quantum dot content is the 8% of aerosil particles, and 12% particle diameter is 10 μm
Polymethyl methacrylate particle, polyester granules and silicon dioxide granule, polymethyl methacrylate grain
The mass ratio of son, polyester granules and silicon dioxide granule is 2:2:1,74% urethane acrylate glue,
And 2% diphenylthanedione light trigger.The correlated performance test result of gained quantum dot film is shown in Table 1.
Embodiment 9
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 15 μm, by 85%
Epoxy acrylate adhesive and 15% particle diameter for 5-12 μm PMMA particles constitute.PET hinders
Compartment thickness is 100 μm, and the thickness of water oxygen barrier layer is 20nm, and depositing temperature is 80 DEG C, measures its water
OTR oxygen transmission rate, the results are shown in Table 1.The thickness of quantum dot layer is 200 μm.Quantum dot layer includes 10% grain
Footpath is 20 μm of aerosil particles, and quantum dot content is the 5% of aerosil particles, and 10% particle diameter is 20 μm
Polymethyl methacrylate particle, makrolon particle and silicon dioxide granule, poly-methyl methacrylate
The mass ratio of ester particle, makrolon particle and silicon dioxide granule is 2:2:1,78% polyurethane propylene
Acid esters glue, and 2% diphenylthanedione light trigger.The correlated performance test of gained quantum dot film
The results are shown in Table 1.
Embodiment 10
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 5 μm, by 85%
Polyester acrylate adhesive and the PMMA particles that 15% particle diameter is 1-3 μm are constituted.PET is intercepted
Thickness degree is 50 μm.The thickness of water oxygen barrier layer is 15nm, and depositing temperature is 100 DEG C, measures its water oxygen
Vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 200 μm.Comprising 12% grain in quantum dot layer
Footpath is 10 μm of aerosil particles, and 12% particle diameter is 10 μm of polymethyl methacrylate particle and polyester
The mass ratio of particle, polymethyl methacrylate particle and polyester granules is 1:1, quantum dot content is silica gel
The 8% of particulate, 74% urethane acrylate glue, and 2% diphenylthanedione light trigger.
The correlated performance test result of gained quantum dot film is shown in Table 1.
Embodiment 11
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 20 μm, by 80%
Polyester acrylate adhesive and 20% particle diameter for 6-18 μm PMMA particles constitute.PET hinders
Compartment thickness is 150 μm.The thickness of water oxygen barrier layer is 15nm, and depositing temperature is 200 DEG C, measures it
Water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 200 μm.Quantum dot layer includes 12%
Particle diameter be 10 μm of aerosil particles, quantum dot content is the 8% of aerosil particles, and 12% particle diameter is 10 μm
Polyester granules, 74% polyester acrylate glue, and 2% diphenylthanedione light trigger.
The correlated performance test result of gained quantum dot film is shown in Table 1.
Embodiment 12
The quantum dot film that the present invention is provided is in upper and lower symmetrical structure, includes quantum dot layer, upper and lower water oxygen resistance
Interlayer, upper and lower PET barrier layers and upper lower protective layer.Wherein, protective layer thickness is 10 μm, by 80%
Polyester acrylate adhesive and 20% particle diameter for 6-18 μm PMMA particles constitute.PET hinders
Compartment thickness is 150 μm.The thickness of water oxygen barrier layer is 15nm, and depositing temperature is 200 DEG C, measures it
Water oxygen vapor permeability, the results are shown in Table 1.The thickness of quantum dot layer is 200 μm.Quantum dot layer includes 12%
Particle diameter be 10 μm of aerosil particles, quantum dot content is the 8% of aerosil particles, and 8% particle diameter is
The matter of 21-35 μm of makrolon particle and silicon dioxide granule, makrolon particle and silicon dioxide granule
Amount is than being 5:1,79% epoxy acrylate glue, and 1% diphenylthanedione light trigger.
The correlated performance test result of gained quantum dot film is shown in Table 1.
Comparative example 1
Use 14 cun of backlight modules of common side entering type, the HD188A produced using Ningbo Chang Yang scientific ＆ technical corporation
Lower diffusion barrier replaces quantum dot film.It is every in 9 designated areas of measurement using Fu Shida BM-7 brightness photometers
Individual briliancy draws average luminance, center briliancy and color gamut value.The results are shown in Table 1.
Comparative example 2
The quantum dot film that such as embodiment 6 is provided, wherein, using PECVD (Plasma Enhanced Chemical Vapors
Deposit) mode deposited silicon oxide water oxygen barrier layer.The correlated performance test result of gained quantum dot film
It is shown in Table 1.
(water oxygen Obstruct membrane includes one to the water oxygen Obstruct membrane that the embodiment 1-12 of table 1 and comparative example 1-2 is provided
PET barrier layers and be deposited on PET barrier layers a surface water oxygen barrier layer) water oxygen vapor permeability
And the inspection of the center briliancy of quantum dot film, average luminance, colour gamut, brightness decay amount and colour gamut attenuation
Survey result
Testing result shown in table 1 can draw, use the backlight module of the quantum dot film in the present invention
The briliancy for obtaining is approached with the briliancy of traditional backlight module, with colour gamut higher, and by weatherability
Test, quantum dot film brightness decay amount in a backlight is low with colour gamut attenuation, is prepared with respect to PECVE
The quantum dot film of water oxygen barrier layer, weatherability is more preferable, so as to increased the service life of display.Wherein,
Embodiment 3-8 provide quantum dot film combination property more preferably, briliancy is higher, brightness, colour gamut attenuation compared with
It is few.And the combination property of the quantum dot film that embodiment 4 is provided is best.
The above, only presently preferred embodiments of the present invention is not intended to limit protection of the invention
Scope.Every impartial change done according to present invention and modification, are encompassed by patent of the invention
In the range of.
Claims (10)
1. a kind of quantum dot film, it is characterised in that the quantum dot film includes quantum dot layer, water oxygen barrier layer, PET
Barrier layer, and protective layer；The water oxygen barrier layer includes upper water oxygen barrier layer and lower water oxygen barrier layer；It is described
PET barrier layers include upper PET barrier layers and lower PET barrier layers；The protective layer includes up-protective layer with
Protective layer；The quantum dot film includes up-protective layer, upper PET barrier layers, upper water oxygen barrier layer, amount successively
Son point layer, lower water oxygen barrier layer, lower PET barrier layers and lower protective layer；The quantum dot layer include adhesive,
Aerosil particles and diffusion particle, include quantum dot particle in the aerosil particles.
2. quantum dot film according to claim 1, it is characterised in that the quantum dot layer includes following components：
Adhesive 68-79%, aerosil particles 10-15%, diffusion particle 10-15%, light trigger 1-2%；It is described
The content of quantum dot particle is the 5-10% of the aerosil particles；The percentage composition is weight percentage.
3. quantum dot film according to claim 1, it is characterised in that the material of the protective layer includes following
Component：Adhesive 80-85%, resist blocking and that particle 15-20%；The percentage composition is weight percentage.
4. quantum dot film according to claim 1, it is characterised in that in quantum dot layer, the adhesive
Selected from the one kind in urethane acrylate glue, epoxy acrylate glue or polyester acrylate glue；
The diffusion particle is selected from polymethyl methacrylate particle, polyester granules, makrolon particle or dioxy
One kind or at least two combination in SiClx particle.
5. quantum dot layer according to claim 4, it is characterised in that the particle diameter of the aerosil particles is
1-20 μm, the particle diameter of diffusion particle is 1-35 μm.
6. quantum dot film according to claim 1, it is characterised in that the water oxygen barrier layer is Si oxide
Film, the silicon oxide film is prepared from by ald mode, the thickness of the silicon oxide film
It is 10-20nm to spend.
7. quantum dot film according to claim 1, it is characterised in that the quantum dot layer includes following components：
Adhesive 74-78%, aerosil particles 10-12%, diffusion particle 10-12%, light trigger 2%；The amount
The content of son point particle is the 5-8% of the aerosil particles；The particle diameter of the aerosil particles is 10-20 μm, is expanded
The particle diameter of shot is 10-20 μm；The percentage composition is weight percentage.
8. quantum dot film according to claim 1, it is characterised in that the PET barrier layers are transparent PET.
9. quantum dot film according to claim 6, it is characterised in that the preparation method of the water oxygen barrier layer
Comprise the steps：
(1) using PET barrier layers as substrate；
(2) using chlorosilane or amino silane as presoma, with O3It is reaction source, depositing temperature is 50-220 DEG C,
The deposited silicon oxide film on PET barrier layers.
10. a kind of method for preparing quantum dot film according to claim 1, it is characterised in that methods described
Comprise the steps：
(1) water oxygen barrier layer is prepared by ald mode in the upper surface of PET barrier layers；
(2) lower surface in PET barrier layers is coated with resist blocking and that particle as protective layer；
(3) adhesive containing aerosil particles and diffusion particle is coated with water oxygen barrier layer, is covered above adhesive
One layer of lid has the PET barrier layers of water oxygen barrier layer and protective layer, and adhesive is bonded with water oxygen barrier layer.
(4) solidified by UV, obtain quantum dot film.
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Application publication date: 20170630 |