CN210224072U - Micro display unit, pixel unit and display panel - Google Patents

Abstract

The application provides a micro display unit, which comprises a micro light-emitting unit, a refraction layer and a quantum dot layer, wherein the micro light-emitting unit is arranged on a substrate; the refraction layer covers the micro light-emitting unit and diffuses light of the micro light-emitting unit; the quantum dot layer is arranged on the refraction layer and converts the light of the micro light-emitting unit. This application directly covers one deck refraction layer on miniature luminescence unit, and this refraction layer carries out refraction diffusion with the light of emission to make during the light refraction that miniature luminescence unit emitted is whole quantum dot layer, compare with prior art, the utilization ratio on improvement quantum dot layer that such structure can be fine.

Description

Micro display unit, pixel unit and display panel

Technical Field

The application belongs to the field of high-density miniature LED display, and particularly relates to a miniature display unit combined with quantum dots.

Background

The Micro-LED has the characteristics of being brighter and more energy-saving, and is more and more concerned in recent years, and all large photoelectric display macros around the world have the trend of advancing to the Micro-LED display.

In the prior art, the Micro-LED has three main colorization modes: three-color LED bonding methods, LED + luminescent medium methods, and optical synthesis methods. The three-color LED combination method has deviation in display effect due to errors in driving current of red, green and blue LEDs, and the optical synthesis method has a complicated device structure, so that the LED + luminous medium method is more feasible.

In the LED + light emitting dielectric method, a phosphor is often used for the compounding. Since Micro-LED pixels are very small, the phosphor coating is very uneven, affecting the display quality. Therefore, quantum dots + Micro-LEDs are a more preferred solution.

However, when quantum dots are coated on Micro-LEDs at present, the coated quantum dot layer cannot be fully illuminated due to the very small Micro-LED pixels, and the utilization rate of the quantum dots is too low.

It is noted that the information disclosed in this background section is only for enhancement of understanding of the general background of the application and should not be taken as an acknowledgement or any form of suggestion that this information constitutes prior art already known to a person skilled in the art.

SUMMERY OF THE UTILITY MODEL

In view of the above technical problems, the present application provides a Micro display unit, which can improve the utilization rate of a quantum dot layer in a Micro-LED pixel.

In one aspect, a micro display unit is provided, which includes a micro light emitting unit, a refraction layer, and a quantum dot layer, wherein the micro light emitting unit is disposed on a substrate; the refraction layer is arranged on the micro light-emitting unit and used for diffusing the light emitted by the micro light-emitting unit; the quantum dot layer is arranged on the refraction layer and used for converting light emitted by the micro light-emitting units.

Preferably, the refraction layer is a hemispherical structure.

Preferably, the refractive index of the refractive layer is greater than the refractive index of the quantum dot layer.

Preferably, the quantum dot layer includes light diffusing particles.

Preferably, the Micro light-emitting unit is a blue Micro-LED, and the quantum dot layer includes red quantum dots and/or green quantum dots.

In another aspect of the present application, a pixel unit is provided, which has a plurality of sub-pixel units, and each sub-pixel unit is any one of the above micro display units.

Preferably, a spacer is disposed between the sub-pixel units.

Preferably, the pixel unit further comprises a light guide member, and the light guide member is provided with pixel point pits.

Preferably, the quantum dot layer is coated in the pixel pits.

In another aspect of the present application, a display panel is provided, where the display panel has a plurality of pixel units, and the pixel unit is any one of the pixel units.

In another aspect of the present application, a method for manufacturing a pixel unit is provided, where the method includes:

providing a substrate with a micro light-emitting unit;

coating a refraction layer on the micro light-emitting unit;

and covering a quantum dot layer on the refraction layer, wherein the refraction layer has a refractive index larger than that of the quantum dot layer.

Preferably, the step of covering the quantum dot layer on the refraction layer further includes:

and coating the quantum dot layer on a light guide piece, and covering the light guide piece on the refraction layer.

Has the advantages that:

according to the Micro-LED light source, the Micro-LED light emitting unit is directly covered with the refraction layer with the high refractive index, the refraction layer can directly refract and diffuse light emitted by the Micro-LED, and the quantum dot layer covers the refraction layer, so that the light emitted by the Micro-LED can be refracted into the whole quantum dot layer. Compared with the prior art that light emitted by the Micro-LED directly enters the quantum dot layer, the structure can well improve the utilization rate of the quantum dot layer.

Drawings

FIG. 1 is a schematic structural diagram of a micro display unit according to an embodiment of the present disclosure;

FIG. 2 is a schematic diagram of a pixel unit according to an embodiment of the present application;

FIG. 3 is a schematic structural diagram of a pixel unit according to another embodiment of the present application;

FIG. 4 is a schematic structural diagram of a pixel unit according to another embodiment of the present application;

FIG. 5 is a flow chart of a method of fabricating a pixel cell according to an embodiment of the present disclosure;

FIGS. 6 a-6 c are schematic diagrams illustrating a manufacturing process of a pixel unit according to an embodiment of the present disclosure;

fig. 7a to 7f are schematic views illustrating a manufacturing method of a pixel unit according to another embodiment of the present application.

Detailed Description

The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.

As used herein, a statement such as "at least one (one)" modifies an entire list of elements as it precedes or succeeds the list of elements without modifying individual elements of the list. Unless otherwise defined, all terms (including technical and scientific terms) in the specification may be defined as commonly understood by one of ordinary skill in the art. Terms defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and may not be interpreted in an idealized or overly formal sense unless expressly so defined. Furthermore, unless expressly stated to the contrary, the terms "comprises" and "comprising," when used in this specification, specify the presence of stated features, regions, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof. Thus, the above wording will be understood to mean that the stated elements are included, but not to exclude any other elements.

As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. The term "or" means "and/or". The expression "at least one of" when preceding or following a list of elements modifies the entire list of elements without modifying individual elements of the list.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

As used herein, "about" or "approximately" includes the stated value and is meant to be within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art in view of the measurement in question and the error associated with measurement of the particular quantity (i.e., limitations of the measurement system). For example, "about" may mean a deviation from the stated value within one or more standard deviation ranges, or within ± 10%, 5%.

As shown in fig. 1, which is a schematic structural diagram of a micro display unit according to an embodiment of the present disclosure, the micro display unit includes a micro light emitting unit 102, a refraction layer 103, and a quantum dot layer 104, wherein the micro light emitting unit 102 is disposed on a substrate 101; the refraction layer 103 covers the micro light-emitting unit 102, and the refraction layer 103 diffuses light of the micro light-emitting unit 102; the quantum dot layer 104 is provided on the refractive layer 103, and the quantum dot layer 104 converts light of the micro light-emitting unit 102. Each micro-display unit 102 can be individually used as a sub-pixel, such as a red sub-pixel, a green sub-pixel, or a blue sub-pixel in a pixel.

In the embodiment, the refraction layer 103 is directly coated on the micro light-emitting unit 102, so that the refraction layer 103 directly refracts and diffuses the light emitted by the micro light-emitting unit 102, and the refraction layer 103 is further coated with the quantum dot layer 104, so that the light emitted by the micro light-emitting unit 102 is refracted into the whole quantum dot layer 104. Compared with the prior art that light emitted by micro-led directly enters the quantum dot layer 104, the structure can well improve the utilization rate of the quantum dot layer 104.

The Micro light emitting unit 102 is generally called Micro-LED in the display field, and the size of the Micro light emitting unit 102 is generally smaller than 100 micrometers. In order to realize the three primary colors of RGB, different light conversion materials need to be coated on the light emitting direction of the micro light emitting unit 102, and the light emitting performance of the quantum dot is more excellent than that of other fluorescent materials. However, the size of the micro light-emitting unit 102 is too small, and when the quantum dot layer 104 is coated on the micro light-emitting unit 102, the micro light-emitting unit 102 can illuminate only a partial region of the quantum dot layer 104. Therefore, the present application proposes to further coat a refraction layer 103 on the micro light-emitting unit 102, and to refract and diffuse the light of the micro light-emitting unit 102 through the refraction layer 103, so that the micro light-emitting unit 102 can illuminate the whole area of the quantum dot layer 104.

The refractive layer 103 is made of a transparent material having a high refractive index, and the refractive index of the refractive layer 103 is required to be at the lowest level to be larger than that of the quantum dot layer 104. In addition, in another embodiment of the present application, the interface of the refraction layer 103 is configured as a hemispherical structure, such that the hemispherical structure can further increase the deflection angle of light between the refraction layer 103 and the quantum dot layer 104, thereby increasing the light-emitting angle of the micro light-emitting unit 102.

In another embodiment of the present application, the quantum dot layer 104 further contains light diffusion particles, and after the light enters the quantum dot layer 104, the light diffusion particles enable the light in the quantum dot layer 104 to undergo multiple scattering and refraction, further improving the utilization rate of the quantum dot layer 104.

In another embodiment of the application, the Micro-light emitting unit 102 is a blue Micro-LED, and the quantum dot layer is a green quantum dot layer or a red quantum dot layer. Of course, the light emitting color of the micro light emitting unit 102 is not limited to this, and the micro light emitting unit 102 may be light of other colors, Ultraviolet (UV), or the like. Meanwhile, different quantum dot layers 104 may be selected for photoconversion according to the color of light emitted from the micro light-emitting units 102.

The quantum dot layer 104 is a structural layer containing quantum dots, and the quantum dots in the quantum dot layer 104 are not particularly limited in this application.

The quantum dots can be prepared by any known method or are commercially available. For example, the quantum dots can include group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements or compounds, group I-III-VI compounds, group I-II-IV-VI compounds, or combinations thereof.

For example, the group II-VI compounds may include:

a binary compound comprising: CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or combinations thereof;

a ternary compound comprising: CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or a combination thereof; and

a quaternary compound comprising: HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or combinations thereof.

The II-VI compound can further include a group III metal.

The group III-V compounds may include:

a binary compound comprising: GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or combinations thereof;

a ternary compound comprising: GaNP, GaNAs, GaNSb, GaGaAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, InZnP, or combinations thereof; and

a quaternary compound comprising: GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or combinations thereof.

The III-V compound may further include a group II metal (e.g., InZnP).

The group IV-VI compounds may include:

a binary compound comprising: SnS, SnSe, SnTe, PbS, PbSe, PbTe, or combinations thereof;

a ternary compound comprising: SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, or combinations thereof; and

a quaternary compound comprising: SnPbSSe, SnPbSeTe, SnPbSTe, or a combination thereof.

Examples of the group I-III-VI compounds may include CuInSe2, CuInS2, CuInGaSe, and CuInGaS, but are not limited thereto.

Examples of the group I-II-IV-VI compounds may include, but are not limited to, CuZnSnSe and CuZnSnS.

The group IV element or compound may include:

the method comprises the following simple substances: si, Ge, or a combination thereof; and

a binary compound comprising: SiC, SiGe, or a combination thereof.

The quantum dots may further be core-shell structures, for example, a quantum dot may include a core of a nanocrystal and a shell disposed on at least a portion (or all) of a surface of the nanocrystal and comprising a material having a different composition than the nanocrystal. At the interface between the core and the shell, there may or may not be an alloyed interlayer. The alloyed layer may include a homogeneous alloy. The alloyed layer may have a concentration gradient. In a gradient alloy, the concentration of the elements of the shell varies radially (e.g., decreases or increases toward the core). In addition, the shell may comprise a multi-layer shell having at least two layers, wherein adjacent layers have different compositions from each other. In the multilayer shell, each layer may have a single composition. In the multilayer shell, each layer may have an alloy. In the multilayer shell, each layer may have a concentration gradient that varies in a radial direction according to the composition of the nanocrystal.

In the quantum dot of the core-shell structure, the material of the shell may have a band gap energy greater than that of the core, but is not limited thereto. The material of the shell may have a bandgap energy that is less than the bandgap energy of the core. In the case of the multi-layer shell, the energy band gap of the outermost layer material of the shell may be larger than the energy band gaps of the core and the inner layer materials of the shell (layers closer to the core). In the case of the multilayer shell, the nanocrystals of the respective layers are selected to have appropriate band gap energies, thereby effectively exhibiting a quantum confinement effect.

In addition, the particle size of the quantum dots may have a size of about 1nm to about 100 nm. For example, the quantum dots can have a particle size of about 1nm to about 50nm, such as from 2nm (or from 3nm) to 35 nm. The shape of the quantum dot is a shape generally used in the art, and is not particularly limited. For example, the quantum dots can include spherical, pyramidal, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanosheet (plate) particles, combinations thereof, and the like.

The quantum dots can be obtained commercially or synthesized by any method. For example, quantum dots of several nanometers in size can be synthesized by wet chemical processes. In wet chemical processes, the precursors react in an organic solvent to grow the nanocrystal particles, and the organic solvent or ligand compound can coordinate (or bind) to the surface of the nanocrystals, thereby controlling the growth of the nanocrystals.

The light emission wavelength of the quantum dot is not particularly limited and may be appropriately selected. The photoluminescence wavelength of the quantum dots may be present in a range from the ultraviolet region to the near infrared region. For example, the maximum peak wavelength of the quantum dot may exist in a range from about 420 to about 750nm, but it is not limited thereto.

The quantum dots may have a Full Width Half Maximum (FWHM) of less than or equal to about 45nm, such as less than or equal to about 40nm, or less than or equal to about 30 nm. While not wanting to be bound by theory, it is understood that within such a range, a device including the nanocrystals may have enhanced color purity or improved color reproducibility.

Fig. 2 is a schematic structural diagram of a pixel unit according to an embodiment of the present application. The pixel unit comprises three sub-pixels 214, 215 and 212, wherein the three sub-pixels 214, 215 and 212 respectively correspond to three primary colors of RGB, namely a red sub-pixel 214, a green sub-pixel 215 and a blue sub-pixel 212. The three sub-pixels 214, 215, 212 are all arranged on the substrate 201, and the Micro light emitting units 202 of the three sub-pixels 214, 215, 212 are all blue Micro-LEDs. Of course, the application is not limited thereto, and the Micro light emitting units of the three sub-pixels may also be Micro-LEDs of other colors, or Micro-LEDs of ultraviolet light (UV).

The red subpixel 214 includes a micro light-emitting unit 202, a refractive layer 203, and a red quantum dot layer 204.

The green subpixel 215 includes a micro light-emitting unit 202, a refractive layer 203, and a green quantum dot layer 205.

The blue sub-pixel 212 includes the Micro light emitting unit 202, and since the Micro light emitting unit 202 is a blue Micro-LED, a quantum dot layer is not required for light conversion.

In addition, in the present embodiment, the three sub-pixels 214, 215, and 212 are shown in a horizontal row, but not limited thereto, the three sub-pixels 214, 215, and 212 may also be arranged in a vertical row, or arranged in a triangular row, or arranged in a cross manner in a green-red-blue-green manner, and the like, and the arrangement of each sub-pixel in the pixel unit is not limited in the present application.

In addition, in the present embodiment, three sub-pixels 214, 215, and 212 are taken as an example for explanation, but the present invention is not limited to three sub-pixels, and may be four sub-pixels or more, and the present invention does not limit the number of sub-pixels in a pixel unit.

Fig. 3 is a schematic structural diagram of a pixel unit according to another embodiment of the present application. The pixel unit comprises three sub-pixels 314, 315 and 312, wherein the three sub-pixels 314, 315 and 312 respectively correspond to three primary colors of RGB, namely a red sub-pixel 314, a green sub-pixel 315 and a blue sub-pixel 312. The three sub-pixels 314, 315, 312 are all arranged on the substrate 301, and the Micro light emitting units 302 of the three sub-pixels 314, 315, 312 are all blue Micro-LEDs.

The red subpixel 314 includes a micro light-emitting unit 302, a refractive layer 303, and a red quantum dot layer 304.

The green subpixel 315 includes a micro light-emitting unit 302, a refractive layer 303, and a green quantum dot layer 305.

The blue sub-pixel 312 includes the Micro light emitting unit 302, and since the Micro light emitting unit 302 is a blue Micro-LED, a quantum dot layer is not required for light conversion.

In this embodiment, a spacer 306 is further disposed between each sub-pixel 314, 315, 312, and the spacer 306 can prevent crosstalk between the sub-pixels 314, 315, 312.

As shown in fig. 4, which is a schematic structural diagram of a pixel unit according to another embodiment of the present disclosure, the pixel unit includes three sub-pixels 414, 415, and 412, where the three sub-pixels 414, 415, and 412 respectively correspond to three primary colors of RGB, and are respectively a red sub-pixel 414, a green sub-pixel 415, and a blue sub-pixel 412. The three sub-pixels 414, 415, 412 are all disposed on the substrate 401, and the Micro light emitting units 402 of the three sub-pixels 414, 415, 412 are all blue Micro-LEDs.

The red subpixel 414 includes a micro light-emitting unit 402, a refractive layer 403, and a red quantum dot layer 404.

The green subpixel 415 includes a micro light-emitting unit 402, a refractive layer 403, and a green quantum dot layer 405.

The blue sub-pixel 412 includes the Micro light emitting unit 402, and since the Micro light emitting unit 402 is a blue Micro-LED, a quantum dot layer is not required for light conversion.

A spacer 406 is further disposed between each sub-pixel 414, 415, 412, and the spacer 406 can prevent crosstalk between the sub-pixels 414, 415, 412.

In this embodiment, a blocking layer 407 is further disposed on the pixel unit, and the blocking layer 407 can protect the quantum layers 404 and 405, prevent the quantum dot layers 404 and 405 from being damaged by external water and oxygen, and make the surface of the pixel unit smoother.

Fig. 5 is a flowchart illustrating a method for fabricating a pixel unit according to an embodiment of the present disclosure. The manufacturing schematic diagrams of the pixel unit in fig. 6a to 6c are explained.

The manufacturing method of the pixel unit comprises the following steps:

step S101, providing a substrate with a micro light-emitting unit;

as shown in fig. 6a, the micro light emitting unit is disposed on the substrate; among them, the Micro light emitting unit is generally called Micro-LED in the display field, and the size of the Micro light emitting unit is generally less than 100 micrometers. In this embodiment, a pixel unit includes three sub-pixels as an example, but the present disclosure is not limited to three sub-pixels, and may be four sub-pixels or more, and the present disclosure does not limit the number of sub-pixels in the pixel unit. The Micro light emitting unit is selected as a blue Micro-LED, but the light emitting color of the Micro light emitting unit is not limited thereto, and the Micro light emitting unit may be light of other colors, Ultraviolet (UV) or the like. Step S102, coating a refraction layer on the micro light-emitting unit;

the refraction layer directly covers the micro light-emitting unit and diffuses light emitted by the micro light-emitting unit. The refraction layer is made of transparent material with high refractive index, and the refractive index of the refraction layer is larger than that of the quantum dot layer. Furthermore, the interface of the refraction layer is arranged to be a hemispherical structure, and the hemispherical structure can further increase the deflection angle of light rays on the refraction layer, so that the light-emitting angle of the micro light-emitting unit is increased.

Step S103, covering a quantum dot layer on the refraction layer, wherein the refractive index of the refraction layer is larger than that of the quantum dot layer.

The quantum dot layer is arranged on the refraction layer and converts the light of the micro light-emitting unit. In order to realize the three primary colors of RGB, different light conversion materials are coated on the light emitting direction of the micro light emitting unit, and the light emitting performance of the quantum dot is more excellent than that of other fluorescent materials. The quantum dot layer also contains light diffusion particles, and after light enters the quantum dot layer, the light diffusion particles enable the light in the quantum dot layer to be scattered and refracted for multiple times, so that the utilization rate of the quantum dot layer is further improved. In this embodiment, the Micro light emitting unit is a blue Micro-LED, and the quantum dot layer is a green quantum dot layer or a red quantum dot layer. Of course, the emission color of the micro light-emitting unit is not limited to this, and the micro light-emitting unit may be light of other colors, Ultraviolet (UV), or the like. Meanwhile, different quantum dot layers for light conversion can be selected according to different light colors of the micro light-emitting units. The quantum dot layer is a structural layer including quantum dots, and the quantum dots in the quantum dot layer are not particularly limited in the present application.

In this embodiment, the manufactured micro display unit includes a micro light emitting unit, a refraction layer covering the micro light emitting unit, and a quantum dot layer disposed on the refraction layer. Through direct cladding refraction layer on miniature luminescence unit for the direct light with miniature luminescence unit transmission of refraction layer refracts the diffusion, and has covered the quantum dot layer again on the refraction layer, thereby makes the light refraction of miniature luminescence unit transmission in whole quantum dot layer. The structure can well improve the utilization rate of the quantum dot layer.

Fig. 7a to 7f are schematic views illustrating a manufacturing method of a pixel unit according to another embodiment of the present application. The explanation will be made with reference to the production flowchart shown in fig. 5.

As shown in fig. 7a, providing a substrate having a micro light emitting cell; the micro light-emitting unit is arranged on the substrate; wherein, the size of the micro light-emitting unit is generally less than 100 microns. In this embodiment, taking the example that the pixel unit includes three sub-pixels, the Micro light emitting unit is selected as a blue Micro-LED.

As shown in fig. 7b, a refraction layer is coated on the micro light emitting unit; the refraction layer directly covers the micro light-emitting unit and diffuses light emitted by the micro light-emitting unit. The refraction layer is made of transparent material with high refractive index, and the refractive index of the refraction layer is larger than that of the quantum dot layer. Furthermore, the interface of the refraction layer is arranged to be a hemispherical structure, and the hemispherical structure can further increase the deflection angle of light rays on the refraction layer, so that the light-emitting angle of the micro light-emitting unit is increased.

As shown in fig. 7c, providing a light guide with pixel pits; the pixel pit on the leaded light spare corresponds with miniature luminescence unit one-to-one on the substrate, and the interval of pixel pit and miniature luminescence unit's interval phase-match promptly, and the degree of depth and the miniature luminescence unit phase-match of pixel pit to can hold down miniature display element, refraction layer and quantum dot layer as the standard.

As shown in fig. 7d, a quantum dot layer is coated in the pixel pits of the light guide.

The difference from the previous embodiments is that the quantum dot layer is coated on the pits of the pixel of the light guide member first, and the quantum dot layer is directly coated on the refraction layer in the previous embodiments. Because the size of miniature display element is very little, is very difficult to the operation in actual manufacture process, earlier in the pixel pit of quantum dot layer coating in leaded light spare, the accurate counterpoint laminating of being convenient for the manufacturing procedure is convenient controllable. The color of the quantum dot layer coated in each pixel pit is different, in the embodiment, the Micro light-emitting unit is a blue light Micro-LED, and the green quantum dot layer, the red quantum dot layer and the non-coated quantum dot layer are respectively coated in the three pixel pits.

As shown in fig. 7e and 7f, the light guide member is covered on the refraction layer, and the light guide member coated with the quantum dot layer and the micro light emitting units coated with the refraction layer are correspondingly attached one to one. In the embodiment, the quantum dot layer of each sub-pixel is covered by the light guide member, so that the quantum dot layer can be well protected, and the quantum dot layer is prevented from being damaged by water and oxygen in the external atmosphere.

Another embodiment of the present application provides a display panel having a plurality of pixel units. The pixel unit comprises three sub-pixels, and the three sub-pixels respectively correspond to three primary colors of RGB. The Micro light-emitting units of the three sub-pixels are blue Micro-LEDs. Of course, the application is not limited thereto, and the Micro light emitting units of the three sub-pixels may also be Micro-LEDs of other colors, or Micro-LEDs of ultraviolet light (UV). The red sub-pixel comprises a micro light-emitting unit, a refraction layer and a red quantum dot layer. The green sub-pixel includes a micro light-emitting unit, a refraction layer and a green quantum dot layer. The blue sub-pixel comprises a Micro light-emitting unit, and the Micro light-emitting unit is a blue Micro-LED, so that a quantum dot layer is not needed for light conversion.

In addition, the arrangement of the three sub-pixels in this embodiment is not limited, and may be arranged in a horizontal row and a vertical row, or arranged in a triangular manner, or arranged in a cross manner in a green-red-blue-green manner, and the like, and the arrangement of each sub-pixel in the pixel unit is not limited in the present application. Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.

Claims (10)

1. A miniature display unit, comprising:

the micro light-emitting unit is arranged on a substrate;

a refraction layer disposed on the micro light emitting unit, the refraction layer for diffusing light emitted by the micro light emitting unit; and

and the quantum dot layer is arranged on the refraction layer and is used for converting the light emitted by the micro light-emitting unit.

2. The microdisplay cell of claim 1 wherein the refractive layer is a hemispherical structure.

3. The microdisplay cell of claim 1 wherein the refractive layer has a refractive index greater than that of the quantum dot layer.

4. The microdisplay cell of claim 1 wherein the quantum dot layer comprises light diffusing particles.

5. The Micro-display unit of claim 1, wherein the Micro-light emitting unit is a blue Micro-LED, and the quantum dot layer comprises red quantum dots and/or green quantum dots.

6. A pixel unit having a plurality of sub-pixel units, wherein the sub-pixel units are the micro-display units as claimed in any one of claims 1 to 5.

7. The pixel cell of claim 6, wherein a spacer is disposed between the sub-pixel cells.

8. The pixel cell of claim 6, further comprising a light guide having pixel pits.

9. The pixel cell of claim 8, wherein the quantum dot layer is coated in the pixel pits.

10. A display panel having a plurality of pixel units, wherein the pixel unit is any one of the pixel units of claims 6 to 9.

Images