CN109009157A - A kind of control voltage generation circuit based on amplifier bias current and light intensity - Google Patents
A kind of control voltage generation circuit based on amplifier bias current and light intensity Download PDFInfo
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- CN109009157A CN109009157A CN201810675108.9A CN201810675108A CN109009157A CN 109009157 A CN109009157 A CN 109009157A CN 201810675108 A CN201810675108 A CN 201810675108A CN 109009157 A CN109009157 A CN 109009157A
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- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
- A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases
- A61B5/14557—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases specially adapted to extracorporeal circuits
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Abstract
The invention discloses a kind of control voltage generation circuit based on amplifier bias current and light intensity, including amplifier A1, capacitor CL, stack and adjust transistor, photodiode PD;The positive power source terminal of the A1 is grounded, and negative power end is connect with the cathode of a pole of CL, PD respectively, another pole ground connection of CL;The output end of A1 is connect with the grid for adjusting transistor is stacked;The cathode for stacking the source electrode and PD that adjust transistor connects, the plus earth of PD;It stacks and adjusts transistor drain connection IphAnd Ileak.The present invention can produce one for adjusting amplifier bias current and the positively related control voltage VC of light intensity.
Description
Technical field
The invention belongs to IC design fields, and in particular to a kind of control based on amplifier bias current and light intensity
Voltage generation circuit.
Background technique
Integrating circuit is the important link for realizing signals revivification, it is the core in optical frequency sensor, it main
Effect is that the photoelectric current for generating photodiode is converted into voltage signal, and performance determines spectral range and the response of signal
Time directly affects the stable state and mapping of optical frequency sensor.
Optical frequency sensing chip field in blood oxygen detector, portable Medical Devices all develop towards low-power consumption,
In optical frequency sensing chip, the power consumption of integrating circuit occupies very high ratio, because inputting to allow output frequency quickly to track
The variation of light intensity needs amplifier to have biggish bandwidth, guarantees that loop has higher phase margin, otherwise, output frequency can be shown
Show the damped oscillation of pulse photoresponse, this can it is significant increase output frequency settling time, and eventually lead to blood oxygen saturation inspection
Examining system failure, so the integrating circuit power consumption of quick response is larger, especially in traditional integrating circuit, because it
The bias current of amplifier be it is fixed, the current drain of closed loop amplifier must satisfy the phase margin in the case of maximum output frequency
It is required that the power consumption of amplifier can not dynamically be adjusted to match different light intensity demands.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
Main purpose is to provide a kind of control voltage generation circuit based on amplifier bias current and light intensity, it is intended to solve how to produce
The problem of one is given birth to for adjusting the control voltage VC positively related with light intensity of amplifier bias current.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of control voltage generation circuit based on amplifier bias current and light intensity, including amplifier A1, capacitor CL, heap
It is folded to adjust transistor, photodiode PD;
The positive power source terminal of the A1 is grounded, and negative power end is connect with the cathode of a pole of CL, PD respectively, and another pole of CL connects
Ground;The output end of A1 is connect with the grid for adjusting transistor is stacked;
The cathode for stacking the source electrode and PD that adjust transistor connects, the plus earth of PD;
It stacks and adjusts transistor drain connection IphAnd Ileak。
Further, the A1 folds grid difference amplifier altogether using standard.
Further, it includes several metal-oxide-semiconductors that the stacking, which adjusts transistor, the output end of A1 respectively with several MOS
The grid of pipe connects;The drain electrode of several metal-oxide-semiconductors and source electrode are in turn connected into metal-oxide-semiconductor string;The source electrode of metal-oxide-semiconductor string and bearing for PD
Pole connection, drain electrode and IphAnd IleakConnection.
Further, it includes metal-oxide-semiconductor M12~M14 that the stacking, which adjusts transistor, the grid of M12~M14 and A1 it is defeated
Outlet connection, the drain electrode of M12 and IphAnd IleakThe drain electrode of connection, the source electrode and M13 of M12 connects, the leakage of the source electrode and M14 of M13
Pole connection, the source electrode of M14 and the cathode of PD connect.
Further, the drain electrode default voltage of M12 is 300mV.
Further, all metal-oxide-semiconductors are all made of 5V type.
Compared with prior art, the present invention has at least the following advantages:
Luminous intensity can be quickly obtained by photodiode, thus according to different light intensity, rapidly, dynamic real estate
Raw control voltage VC, and the control voltage and photoelectric current that generate have positive correlation, it is possible to for controlling bias current
Size.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of the control voltage generation circuit based on amplifier bias current and light intensity;
Fig. 2 is the dependency diagram for controlling voltage VC and photoelectric current.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Obviously, described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments for site preparation description.
Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without creative efforts
The every other embodiment obtained, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention
In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should
When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
The description for being such as related to " first ", " second " in the present invention is used for description purposes only, and should not be understood as indicating
Or it implies its relative importance or implicitly indicates the quantity of indicated technical characteristic." first ", " second " are defined as a result,
Feature can explicitly or implicitly include at least one of the features.
In the description of the present invention, the meaning of " plurality " is at least two, such as two, three etc., unless otherwise clear
It is specific to limit.
In the present invention unless specifically defined or limited otherwise, term " connection ", " fixation " etc. shall be understood in a broad sense,
For example, " fixation " may be a fixed connection, it may be a detachable connection, or integral;It can be mechanical connection, be also possible to
Electrical connection;It can be and be directly connected to, can also be indirectly connected with by intermediary, can be the connection inside two elements or two
The interaction relationship of a element, unless otherwise restricted clearly.It for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term in the present invention.
It in addition, the technical solution between each embodiment of the present invention can be combined with each other, but must be general with this field
Based on logical technical staff can be realized, it will be understood that when the combination of technical solution appearance is conflicting or cannot achieve this
The combination of technical solution is not present, also not the present invention claims protection scope within.
Embodiment 1
The embodiment of the invention provides the control voltage generation circuits based on amplifier bias current and light intensity, such as Fig. 1 institute
Show,
Including folding grid difference amplifier A1, capacitor CL, metal-oxide-semiconductor M12~M14, photodiode PD altogether using standard;
The positive power source terminal of A1 is grounded, and negative power end is connect with the cathode of a pole of CL, PD respectively, another pole ground connection of CL;
The grid of M12~M14 is connected with the output end of A1;
The drain electrode of the source electrode and M13 of M12 connects, and the drain electrode of the source electrode and M14 of M13 connects, the source electrode of M14 and the cathode of PD
Connection, the plus earth of PD;
The drain electrode of M12 and IphAnd IleakConnection.
The drain electrode default voltage of M12 is 300mV;Metal-oxide-semiconductor M12~M14 is all made of 5V type.
In the present embodiment, M12~M14 can be approximated to be the collection overall length channel MOS transistor ML in zone of saturation, control
Voltage VC can be expressed as formula 1, wherein Vth_MLAnd βn_MLIt is the coefficient of efficiency of transistor ML.
Simulation result shown in Fig. 2 shows that controlling voltage VC and photoelectric current has positive correlation, can be used for being mentioned
LIPC out controls voltage.
More than, it is merely preferred embodiments of the present invention, but the protection scope invented is not limited thereto, it is any ripe
Know those skilled in the art in the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of, should all contain
Lid is within protection scope of the present invention.Therefore, the scope of protection of the invention shall be subject to the scope of protection specified in the patent claim.
Claims (6)
1. a kind of control voltage generation circuit based on amplifier bias current and light intensity, which is characterized in that including amplifier A1,
Capacitor CL, adjusting transistor, photodiode PD are stacked;
The positive power source terminal of the A1 is grounded, and negative power end is connect with the cathode of a pole of CL, PD respectively, another pole ground connection of CL;
The output end of A1 is connect with the grid for adjusting transistor is stacked;
The cathode for stacking the source electrode and PD that adjust transistor connects, the plus earth of PD;
It stacks and adjusts transistor drain connection IphAnd Ileak。
2. hyperfrequency clock data synchronous circuit according to claim 1, which is characterized in that the A1 is folded using standard
Grid difference amplifier altogether.
3. hyperfrequency clock data synchronous circuit according to claim 1, which is characterized in that the stacking adjusts transistor
Including several metal-oxide-semiconductors, the output end of A1 is connect with the grid of several metal-oxide-semiconductors respectively;The drain electrode of several metal-oxide-semiconductors and source
Pole is in turn connected into metal-oxide-semiconductor string;The source electrode of metal-oxide-semiconductor string and the cathode of PD connect, drain electrode and IphAnd IleakConnection.
4. hyperfrequency clock data synchronous circuit according to claim 1, which is characterized in that the stacking adjusts transistor
Including metal-oxide-semiconductor M12~M14, the grid of M12~M14 is connected with the output end of A1, the drain electrode of M12 and IphAnd IleakConnection,
The drain electrode of the source electrode and M13 of M12 connects, and the drain electrode of the source electrode and M14 of M13 connects, and the source electrode of M14 and the cathode of PD connect.
5. hyperfrequency clock data synchronous circuit according to claim 4, which is characterized in that the drain electrode default voltage of M12
For 300mV.
6. any hyperfrequency clock data synchronous circuit in -5 according to claim 1, which is characterized in that all metal-oxide-semiconductors
It is all made of 5V type.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109646016A (en) * | 2018-12-25 | 2019-04-19 | 重庆湃芯入微科技有限公司 | A kind of low-power consumption integrating circuit adjusted based on current automatic adaptation |
CN112398475A (en) * | 2019-08-12 | 2021-02-23 | 天津大学青岛海洋技术研究院 | Cyclic ADC structure with CDS function |
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2018
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KR20150110898A (en) * | 2014-03-20 | 2015-10-05 | 주식회사 하이로시 | Method for measuring oxygen saturation |
CN106580339A (en) * | 2016-12-23 | 2017-04-26 | 中国科学院深圳先进技术研究院 | Blood oxygen pulse acquisition system and blood oxygen pulse acquisition front integrated circuit |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN109646016A (en) * | 2018-12-25 | 2019-04-19 | 重庆湃芯入微科技有限公司 | A kind of low-power consumption integrating circuit adjusted based on current automatic adaptation |
CN112398475A (en) * | 2019-08-12 | 2021-02-23 | 天津大学青岛海洋技术研究院 | Cyclic ADC structure with CDS function |
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Application publication date: 20181218 |