CN109009156A - A kind of amplifier bias current generation circuit - Google Patents
A kind of amplifier bias current generation circuit Download PDFInfo
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- CN109009156A CN109009156A CN201810675088.5A CN201810675088A CN109009156A CN 109009156 A CN109009156 A CN 109009156A CN 201810675088 A CN201810675088 A CN 201810675088A CN 109009156 A CN109009156 A CN 109009156A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims 3
- 230000003287 optical effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
- A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases
- A61B5/14557—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases specially adapted to extracorporeal circuits
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Abstract
The invention discloses a kind of amplifier bias current generation circuits, including metal-oxide-semiconductor Mb1~Mb8, triode Qb1~Qb2, diode, resistance Rb1；The drain electrode of the source electrode and Mb3 of Mb1 connects, and the source electrode of Mb3 and the emitter of Qb1 connect, the grounded collector of Qb1；The drain electrode of the source electrode and Mb4 of Mb2 connects, and the source electrode of Mb4 is connected by the emitter of Rb1 and Qb2, the grounded collector of Qb2；The source electrode connection of the grid, Mb2 of the grid and Mb2 of Mb1；The source electrode of Mb1 and the grid of Mb3 connect；The base stage of Qb1 is grounded after being connected with the base stage of Qb2；The grid connection of the source electrode and the grid of Mb5, the grid of Mb6, Mb7 of Mb2；The source electrode of Mb5 and the anode of diode connect, and the cathode of diode is connect with control voltage VC；The drain electrode of the source electrode and Mb8 of Mb6 connects, and the source electrode of Mb8 and the source electrode of Mb7 connect；The grid of Mb8 and the anode of diode connect.The present invention can realize the size of dynamical output bias current according to the variation of control voltage, to realize the power consumption for reducing amplifier, and then realize the power consumption for reducing entire circuit.
Description
Technical field
The invention belongs to IC design fields, and in particular to a kind of amplifier bias current generation circuit.
Background technique
Integrating circuit is the important link for realizing signals revivification, it is the core in optical frequency sensor, it main
Effect is that the photoelectric current for generating photodiode is converted into voltage signal, and performance determines spectral range and the response of signal
Time directly affects the stable state and mapping of optical frequency sensor.
Optical frequency sensing chip field in blood oxygen detector, portable Medical Devices all develop towards low-power consumption,
In optical frequency sensing chip, the power consumption of integrating circuit occupies very high ratio, because inputting to allow output frequency quickly to track
The variation of light intensity needs amplifier to have biggish bandwidth, guarantees that loop has higher phase margin, otherwise, output frequency can be shown
Show the damped oscillation of pulse photoresponse, this can it is significant increase output frequency settling time, and eventually lead to blood oxygen saturation inspection
Examining system failure, so the integrating circuit power consumption of quick response is larger, especially in traditional integrating circuit, because it
The bias current of amplifier be it is fixed, the current drain of closed loop amplifier must satisfy the phase margin in the case of maximum output frequency
It is required that the power consumption of amplifier can not dynamically be adjusted to match different light intensity demands.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
Main purpose is to provide a kind of amplifier bias current generation circuit, it is intended to which how solution adjusts bias current size as needed
The problem of.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of amplifier bias current generation circuit, including metal-oxide-semiconductor Mb1~Mb8, triode Qb1~Qb2, diode, electricity
Hinder Rb1；
The drain electrode of the source electrode and Mb3 of Mb1 connects, and the source electrode of Mb3 and the emitter of Qb1 connect, the grounded collector of Qb1；
The drain electrode of the source electrode and Mb4 of Mb2 connects, and the source electrode of Mb4 is connected by the emitter of Rb1 and Qb2, the current collection of Qb2
Pole ground connection；
The source electrode connection of the grid, Mb2 of the grid and Mb2 of Mb1；
The source electrode of Mb1 and the grid of Mb3 connect；
The base stage of Qb1 is grounded after being connected with the base stage of Qb2；
The grid connection of the source electrode and the grid of Mb5, the grid of Mb6, Mb7 of Mb2；
The source electrode of Mb5 and the anode of diode connect, and the cathode of diode is connect with control voltage VC；
The drain electrode of the source electrode and Mb8 of Mb6 connects, and the source electrode of Mb8 and the source electrode of Mb7 connect；
The grid of Mb8 and the anode of diode connect.
Further, the cathode voltage of the diode is higher than control voltage VC voltage 1.2V.
Further, the diode includes two diodes of Qb3 and Qb4；Qb3 anode respectively with the source electrode of Mb5,
The grid of Mb8 connects, and the cathode of Qb3 and the anode of Qb4 connect, and the anode of Qb4 is connect with control voltage VC.
Further, constant for 600nA by the electric current of diode Qb3 and Qb4.
Compared with prior art, the present invention has at least the following advantages:
Bias current is constant in the prior art, cannot be adjusted according to demand, higher, the present invention so circuit integrally consumes energy
By changing the bias current size of output according to the size dynamic of control voltage, to realize the purpose for reducing power consumption.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of amplifier bias current generation circuit；
Fig. 2 is the relationship for controlling voltage and bias current.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Obviously, described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments for site preparation description.
Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without creative efforts
The every other embodiment obtained, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention
In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should
When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
The description for being such as related to " first ", " second " in the present invention is used for description purposes only, and should not be understood as indicating
Or it implies its relative importance or implicitly indicates the quantity of indicated technical characteristic." first ", " second " are defined as a result,
Feature can explicitly or implicitly include at least one of the features.
In the description of the present invention, the meaning of " plurality " is at least two, such as two, three etc., unless otherwise clear
It is specific to limit.
In the present invention unless specifically defined or limited otherwise, term " connection ", " fixation " etc. shall be understood in a broad sense,
For example, " fixation " may be a fixed connection, it may be a detachable connection, or integral；It can be mechanical connection, be also possible to
Electrical connection；It can be and be directly connected to, can also be indirectly connected with by intermediary, can be the connection inside two elements or two
The interaction relationship of a element, unless otherwise restricted clearly.It for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term in the present invention.
It in addition, the technical solution between each embodiment of the present invention can be combined with each other, but must be general with this field
Based on logical technical staff can be realized, it will be understood that when the combination of technical solution appearance is conflicting or cannot achieve this
The combination of technical solution is not present, also not the present invention claims protection scope within.
Embodiment 1
The embodiment of the invention provides amplifier bias current generation circuits, as shown in Figure 1,
A kind of amplifier bias current generation circuit, including metal-oxide-semiconductor Mb1~Mb8, triode Qb1~Qb2, diode, electricity
Hinder Rb1；
The drain electrode of the source electrode and Mb3 of Mb1 connects, and the source electrode of Mb3 and the emitter of Qb1 connect, the grounded collector of Qb1；
The drain electrode of the source electrode and Mb4 of Mb2 connects, and the source electrode of Mb4 is connected by the emitter of Rb1 and Qb2, the current collection of Qb2
Pole ground connection；
The source electrode connection of the grid, Mb2 of the grid and Mb2 of Mb1；
The source electrode of Mb1 and the grid of Mb3 connect；
The base stage of Qb1 is grounded after being connected with the base stage of Qb2；
The grid connection of the source electrode and the grid of Mb5, the grid of Mb6, Mb7 of Mb2；
The source electrode of Mb5 and the anode of diode connect, and the cathode of diode is connect with control voltage VC；
The drain electrode of the source electrode and Mb8 of Mb6 connects, and the source electrode of Mb8 and the source electrode of Mb7 connect；
The grid of Mb8 and the anode of diode connect.
Diode includes two diodes of Qb3 and Qb4；The anode of Qb3 is connect with the grid of the source electrode of Mb5, Mb8 respectively,
The cathode of Qb3 and the anode of Qb4 connect, and the anode of Qb4 is connect with control voltage VC.
The constant electric current of diode Qb3 and Qb4 is 600nA；The cathode voltage of Qb3 is higher than control voltage VC voltage 1.2V.
600nA constant current is absorbed into and light intensity positive correlation control voltage VC by stacking diode Qb3 and Qb4.Knot
Fruit, control voltage Vs1 can be generated under the fixed voltage than controlling voltage VC high 1.2V.
Fig. 2 show the relationship of control voltage VC and amplifier bias current IbA.When controlling voltage VC higher than 0.9V,
NMOS transistor Mb8 is in linear region, can be considered as conducting switch.If controlling voltage VC is lower than turning voltage Vct,
Mb8 enters saturation region, and as a result Mb6 is in linear region.As control voltage VC is continued to decline, Mb8 is closed due to drive lacking.
More than, it is merely preferred embodiments of the present invention, but the protection scope invented is not limited thereto, it is any ripe
Know those skilled in the art in the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of, should all contain
Lid is within protection scope of the present invention.Therefore, the scope of protection of the invention shall be subject to the scope of protection specified in the patent claim.
Claims (4)
1. a kind of amplifier bias current generation circuit, which is characterized in that including metal-oxide-semiconductor Mb1~Mb8, triode Qb1~Qb2,
Diode, resistance Rb1；
The drain electrode of the source electrode and Mb3 of Mb1 connects, and the source electrode of Mb3 and the emitter of Qb1 connect, the grounded collector of Qb1；
The drain electrode of the source electrode and Mb4 of Mb2 connects, and the source electrode of Mb4 is connected by the emitter of Rb1 and Qb2, and the collector of Qb2 connects
Ground；
The source electrode connection of the grid, Mb2 of the grid and Mb2 of Mb1；
The source electrode of Mb1 and the grid of Mb3 connect；
The base stage of Qb1 is grounded after being connected with the base stage of Qb2；
The grid connection of the source electrode and the grid of Mb5, the grid of Mb6, Mb7 of Mb2；
The source electrode of Mb5 and the anode of diode connect, and the cathode of diode is connect with control voltage VC；
The drain electrode of the source electrode and Mb8 of Mb6 connects, and the source electrode of Mb8 and the source electrode of Mb7 connect；
The grid of Mb8 and the anode of diode connect.
2. hyperfrequency clock data synchronous circuit according to claim 1, which is characterized in that the anode electricity of the diode
Pressure is higher than control voltage VC voltage 1.2V.
3. hyperfrequency clock data synchronous circuit according to claim 1, which is characterized in that the diode includes Qb3
With two diodes of Qb4；The anode of Qb3 is connect with the grid of the source electrode of Mb5, Mb8 respectively, and the cathode of Qb3 and the anode of Qb4 connect
It connects, the anode of Qb4 is connect with control voltage VC.
4. hyperfrequency clock data synchronous circuit according to claim 3, which is characterized in that pass through diode Qb3 and Qb4
Electric current it is constant be 600nA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810675088.5A CN109009156A (en) | 2018-06-27 | 2018-06-27 | A kind of amplifier bias current generation circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810675088.5A CN109009156A (en) | 2018-06-27 | 2018-06-27 | A kind of amplifier bias current generation circuit |
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| Publication Number | Publication Date |
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| CN109009156A true CN109009156A (en) | 2018-12-18 |
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| CN201810675088.5A Pending CN109009156A (en) | 2018-06-27 | 2018-06-27 | A kind of amplifier bias current generation circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109646016A (en) * | 2018-12-25 | 2019-04-19 | 重庆湃芯入微科技有限公司 | A kind of low-power consumption integrating circuit adjusted based on current automatic adaptation |
| CN110134172A (en) * | 2019-05-09 | 2019-08-16 | 重庆大学 | A kind of complementary bipolar reference current source with power consumption step-by-step adjustment ability |
| US11709517B2 (en) | 2020-03-12 | 2023-07-25 | Nxp Usa, Inc. | Bias current generator circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106580339A (en) * | 2016-12-23 | 2017-04-26 | 中国科学院深圳先进技术研究院 | Blood oxygen pulse acquisition system and blood oxygen pulse acquisition front integrated circuit |
| CN106940199A (en) * | 2017-03-03 | 2017-07-11 | 重庆湃芯微电子有限公司 | Optical frequency sensor with drain current suppressing |
-
2018
- 2018-06-27 CN CN201810675088.5A patent/CN109009156A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106580339A (en) * | 2016-12-23 | 2017-04-26 | 中国科学院深圳先进技术研究院 | Blood oxygen pulse acquisition system and blood oxygen pulse acquisition front integrated circuit |
| CN106940199A (en) * | 2017-03-03 | 2017-07-11 | 重庆湃芯微电子有限公司 | Optical frequency sensor with drain current suppressing |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109646016A (en) * | 2018-12-25 | 2019-04-19 | 重庆湃芯入微科技有限公司 | A kind of low-power consumption integrating circuit adjusted based on current automatic adaptation |
| CN110134172A (en) * | 2019-05-09 | 2019-08-16 | 重庆大学 | A kind of complementary bipolar reference current source with power consumption step-by-step adjustment ability |
| CN110134172B (en) * | 2019-05-09 | 2020-06-30 | 重庆大学 | Complementary bipolar reference current source with power consumption stepping regulation capacity |
| US11709517B2 (en) | 2020-03-12 | 2023-07-25 | Nxp Usa, Inc. | Bias current generator circuit |
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