CN108963091B

CN108963091B - Method for manufacturing flexible quantum dot color film

Info

Publication number: CN108963091B
Application number: CN201711438238.2A
Authority: CN
Inventors: 陈亚文
Original assignee: Guangdong Juhua Printing Display Technology Co Ltd
Current assignee: Guangdong Juhua Printing Display Technology Co Ltd
Priority date: 2017-12-26
Filing date: 2017-12-26
Publication date: 2020-07-10
Anticipated expiration: 2037-12-26
Also published as: CN108963091A

Abstract

The invention discloses a method for manufacturing a flexible quantum dot color film, which comprises the steps of sequentially depositing a black matrix, an R, G, B color film, a water oxygen barrier layer and a flexible substrate on a mother plate with a graphical mask, removing the mother plate and the graphical mask, surrounding the black matrix and the R, G, B color film into a plurality of graphical third deposition pits with the same shape as the graphical mask, and depositing quantum dot materials with the light-emitting colors corresponding to the colors of the R, G, B color film one by one in the plurality of third deposition pits to form a graphical quantum dot light conversion layer so as to obtain the flexible quantum dot color film. The performance of the flexible quantum dot color film prepared by the method can reach the existing level, the manufacturing method does not need any yellow light manufacturing process, and compared with the traditional manufacturing method of the quantum dot color film, the method reduces the photoetching process, simplifies the manufacturing process of the flexible quantum dot color film and reduces the cost.

Description

Method for manufacturing flexible quantum dot color film

Technical Field

The invention relates to the technical field of display, in particular to a manufacturing method of a flexible quantum dot color film.

Background

In the contemporary information society, the importance of displays as a visual information transmission medium is further strengthened, and displays are being developed toward the trend of lighter, thinner, lower power consumption, lower cost, and better image quality in order to dominate in the future.

The color gamut of the lcd tv currently on the market is between 68% and 72% NTSC (national television standards committee), and thus cannot provide high quality display effect, so that the improvement of the color gamut of the lcd tv is the focus of research in the industry. The quantum dot material is inorganic semiconductor nano crystal grain with the grain diameter of 1 nm-100 nm, and a continuous energy band structure is changed into a discrete energy level structure with molecular characteristics by quantum confinement of electrons and holes, and the discrete energy level structure can emit fluorescence after being excited. Due to the discrete energy level structure, the half-wave width of the spectrum is narrow, so the emitted light color purity is high, and the color gamut of the display panel can be obviously improved. In addition, the wavelength of the emitted light can be adjusted by adjusting the size of the quantum dot size, and therefore, the improvement of the display effect of the display panel by using the photoluminescence quantum dot is an effective choice for each large display manufacturer.

The quantum dot color film comprises a black matrix, a color film, a quantum dot photoluminescent layer and the like, and multiple yellow light processes are usually needed to realize patterning, so that the processes are relatively complex, the manufacturing cost is relatively high, and improvement and development are needed.

Disclosure of Invention

Therefore, a manufacturing method of the flexible quantum dot color film with a simple process is needed, and manufacturing cost can be greatly saved.

A manufacturing method of a flexible quantum dot color film comprises the following steps:

providing a mother board, wherein a plurality of graphical masks are arranged on the mother board, and the graphical masks and the mother board form a first deposition pit;

depositing a black matrix in the first deposition pit, wherein the black matrix is exposed out of the patterned mask, so that the black matrix and the patterned masks form a plurality of second deposition pits;

depositing a color film in the second deposition pit, wherein the color film in the second deposition pit is a red (R) color film, a green (G) color film or a blue (B) color film, and the number of the red color film, the green color film or the blue color film is at least one; the height of the color films is smaller than or equal to that of the black matrix, so that the color films are mutually spaced;

depositing a water and oxygen barrier layer on the color film and the black matrix;

depositing a flexible substrate on the water oxygen barrier layer;

removing the master mask and the graphical mask, and forming a third deposition pit with the shape matched with that of the graphical mask by the color film and the black matrix;

and depositing a quantum dot material with a luminous color corresponding to the color of the color film in the third deposition pit to obtain the flexible quantum dot color film.

The manufacturing method of the flexible quantum dot color film comprises the steps of sequentially depositing a black matrix and an R, G, B color film on a master mask with a graphical mask, then depositing a water-oxygen barrier layer and a flexible substrate on the R, G, B color film and the black matrix, removing the master mask and the mask to enable the black matrix and the R, G, B color film to surround a graphical third deposition pit matched with the shape of the mask, and then depositing quantum dot materials with the light-emitting colors corresponding to the colors of the color films in the deposition pits in the third deposition pit. The performance of the flexible quantum dot color film prepared by the method can reach the level of the existing flexible quantum dot color film, and the method does not need any yellow light manufacturing process, reduces the photoetching process, simplifies the manufacturing process of the flexible quantum dot color film and reduces the cost compared with the traditional photoetching manufacturing method of the quantum dot color film.

In one embodiment, the area of one surface of the patterned mask in contact with the master is larger than the area of the other surface remote from the master.

Further, the longitudinal section of the graphical mask is trapezoidal.

In one embodiment, the thickness of the patterned mask is 100nm to 1000 nm.

In one embodiment, the thickness of the black matrix is 1500nm to 4000 nm.

In one embodiment, the black matrix is in an arc shape protruding outwards away from one surface of the master plate.

In one embodiment, the method for depositing the black matrix is a wet process.

In one embodiment, the thickness of the color film is 1000nm to 3500 nm.

In one embodiment, one end of the color film close to the flexible substrate is larger than one end of the color film far away from the flexible substrate.

In one embodiment, the quantum dot material is one or more of a group II-VI photoluminescent quantum dot material, a group III-V photoluminescent quantum dot material, and a group IV-VI photoluminescent quantum dot material.

Drawings

Fig. 1 is a schematic flow chart of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 2 is a schematic diagram of step S1 of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 3 is a schematic diagram of step S2 of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 4 is a schematic diagram of step S3 of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 5 is a schematic view of step S4 of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 6 is a schematic view of step S5 of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 7 is a schematic view of step S6 of a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a flexible quantum dot color film according to an embodiment of the present invention.

Detailed Description

In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

As shown in fig. 1, a method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention includes the following steps:

s1, providing a master 700, and as shown in fig. 2, providing a plurality of patterned masks 710 on the master 700, wherein the plurality of patterned masks and the master form a first deposition pit 720.

Specifically, a rigid substrate provided with a plurality of patterned masks 710 is used as the motherboard 700. It is understood that the rigid substrate is, but not limited to, a glass substrate.

In one embodiment, the patterned mask 710 is prepared using a yellow light process.

Further, the material of the patterned mask 710 may be inorganic material such as silicon oxide, silicon nitride, and aluminum oxide, or organic material such as epoxy resin, acrylic, silicone, PMMA (polymethyl methacrylate), and PS (polystyrene).

Further, the area of one surface of the patterned mask 710 in contact with the master 700 needs to be larger than the area of the other surface away from the master 700. The configuration of patterned mask 710 determines the shape of the later-deposited quantum dot light conversion layer 500.

Further, the patterned mask 710 has a trapezoidal shape in a longitudinal section.

Further, the thickness of the patterned mask 710 is 100nm to 1000 nm. The size and shape of the post-deposited quantum dot light-converting layer 500 is determined by the configuration of the patterned mask 710.

S2, depositing the black matrix 400 in the first deposition pit 720, as shown in fig. 3, the black matrix 400 is exposed to the patterned mask 710, such that the black matrix 400 and the patterned masks 710 form a plurality of second deposition pits 730.

Specifically, the black matrix 400 is exposed from the patterned mask 710 and partially covers the patterned mask 710, so that the black matrix 400 and the patterned masks 710 form a plurality of second deposition pits 730. Thus, the black matrices 400 are integrally connected to each other, and one second deposition pit 730 corresponds to one patterned mask 710.

In one embodiment, a wet process is used, as shown in fig. 2 to 3, to deposit a black matrix material fluid in the first deposition pit 720, and the fluid is cured to form the patterned black matrix 400. It is understood that the black matrix material fluid may be, but is not limited to, a resin photoresist with black dye added, such as carbon black.

Due to the adoption of the wet process, under the action of the surface tension of the black matrix material, one surface of the black matrix 400, which is far away from the master plate 700, is in an arc shape protruding outwards. It is understood that a surface of the black matrix 400 away from the master 700 is arc-shaped, but is not limited to the arc-shape. The shape of the surface of the black matrix 400 only needs to be satisfied that the size of the portion of the black matrix 400 exposed out of the patterned mask 710 is gradually increased from the top end to the bottom end, so that one end of the color film formed by subsequent deposition, which is far away from the master mask, can be larger than one end of the color film which is close to the master mask.

Specifically, the wet process is a wet process such as a surface-to-surface printing process, a screen printing process or a relief printing process.

Preferably, the black matrix 400 is deposited using a press brush method.

In one embodiment, the thickness of the black matrix 400 is 1500nm to 4000 nm. It is understood that the thickness of the black matrix 400 refers to a vertical distance from the highest point of the surface of the black matrix 400 to the lowest edge of the black matrix.

S3, depositing a color film 300 in the second deposition pit 730, as shown in fig. 4, where the color film 300 is a red color film 310, a green color film 320, or a blue color film 330, and the number of the red color film 310, the green color film 320, or the blue color film 330 is at least one; and the height of the color film 300 is less than or equal to the height of the black matrix 400, so that the plurality of red color films 310, green color films 320 and blue color films 330 are spaced apart from each other.

Specifically, the color film 300 is made of a polymer type resin material to which R, G, B coloring agents are added. Thus, a plurality of red color films 310, green color films 320 and blue color films 330 which are spaced apart from each other can be formed by depositing color film materials of different colors in the plurality of second deposition pits 730.

Preferably, the color film 300 is deposited using a printing process. It is understood that other processes such as yellow light process can be used to prepare the color film.

S4, depositing a water and oxygen barrier layer 200 on the color film 300 and the black matrix 400. As shown in fig. 5, the water and oxygen barrier layer 200 covers the color film 300 and the black matrix 400, so that water vapor and oxygen can be prevented from permeating from the color film 300 and the black matrix 400, the stability of the device is improved, and the color film 300 and the black matrix 400 are protected to prevent surface scratches in the subsequent process.

Specifically, the material of the water-oxygen barrier layer 200 is at least one selected from inorganic materials such as silicon oxide, silicon nitride, and aluminum oxide.

S5, as shown in fig. 6, the flexible substrate 100 is deposited on the water oxygen barrier layer 200.

Specifically, the material of the flexible substrate 100 is selected from polymer materials such as PEN (polyethylene naphthalate), PI (polyimide), PES (polyethersulfone), and the like.

S6, removing the master 700 and the patterned mask 710, the color film 300 and the black matrix 400 form a plurality of third deposition pits 450 matching the shape of the patterned mask 710.

Specifically, as shown in fig. 7, the flexible substrate 100, the water and oxygen barrier layer 200, the color film 300, and the black matrix 400 are entirely peeled off from the master 700, and a plurality of third deposition pits 450 are formed, and the third deposition pits 450 are matched with the shape of the patterned mask 710. It is understood that, after the stripping, the groove left at the position where the patterned mask 710 contacts the black matrix 400 and the color film 300 is the third deposition pit 450, and thus, the shape of the third deposition pit 450 is consistent with the shape of the patterned mask 710.

S7, depositing quantum dot material with the luminescent color corresponding to the color of the color film 300 in the third deposition pit 450, to obtain the flexible quantum dot color film 10 shown in fig. 8.

Specifically, the peeled flexible substrate 100 is turned over, and quantum dot materials with the light-emitting colors corresponding to the colors of the color film 300 in the third deposition pit 450 are deposited in the third deposition pit 050 to form the quantum dot light conversion layer 500, wherein the quantum dot light conversion layer 500 comprises a red quantum dot unit 510, a green quantum dot unit and a 520 blue quantum dot unit 530. In this way, the emission color of the quantum dot conversion layer 500 corresponds to the color of the color film 300, and as shown in fig. 8, the red quantum dot unit 510 faces the red color film 310, the green quantum dot unit 520 faces the green color film 320, and the blue quantum dot unit 530 faces the blue color film 330.

Further, the material of the quantum dot light conversion layer 500 is one or more of II-VI group photoluminescent quantum dot material, III-V group photoluminescent quantum dot material, and IV-VI group photoluminescent quantum dot material, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, GaP, GaAs, GaSb, InP, InAs, and the like.

As shown in fig. 8, the flexible quantum dot color film 10 obtained by the method for manufacturing a flexible quantum dot color film according to an embodiment of the present invention includes a flexible substrate 100, a water oxygen barrier layer 200, a color film 300, a black matrix 400, and a quantum dot light conversion layer 500 sequentially stacked on the flexible substrate 100. The color film 300 includes a red (R) color film 310, a green (G) color film 320, and a blue (B) color film 330, and the quantum dot light conversion layer 500 includes a red quantum dot unit 510, a green quantum dot unit 520, and a blue quantum dot unit 530; the black matrix 400 spaces the red, green, and

blue color films

310, 320, 330 apart from each other, and also spaces the red, green, and blue

quantum dot units

510, 520, 530 apart from each other. The emission color of the quantum dot light conversion layer 500 is matched with the color of the color film 300, that is, the red color film 310 is opposite to the red quantum dot unit 510, the green color film 320 is opposite to the green quantum dot unit 520, and the blue color film 330 is opposite to the blue quantum dot unit 530.

In one embodiment, the area of one surface of the black matrix 400 close to the flexible substrate 100 is larger than the area of the other surface far from the flexible substrate 100; similarly, the area of one surface of the color film 300 close to the flexible substrate 100 is larger than that of the other surface far from the flexible substrate 100. Therefore, light leakage can be prevented, and the display effect is improved.

In one embodiment, the color film 300 has a thickness of 1000nm to 3500 nm.

In one embodiment, the thickness of the black matrix 400 is 1500nm to 4000 nm.

In one embodiment, the quantum dot light conversion layer 500 is 100nm to 1000nm thick.

According to the manufacturing method of the flexible quantum dot color film, the rigid substrate with the graphical mask is used as a mother board, then the black matrix, the color film, the water oxygen barrier layer and the flexible substrate are sequentially deposited, after the black matrix, the color film, the water oxygen barrier layer and the flexible substrate are integrally stripped from the rigid substrate, the black matrix surrounds a plurality of graphical third deposition pits matched with the shape of the graphical mask on the color film, and quantum dot materials with the light-emitting colors corresponding to the colors of the color film in the deposition pits are deposited in the third deposition pits to form the quantum dot light conversion layer. The manufacturing method does not need any yellow light manufacturing process, reduces photoetching processes, simplifies the manufacturing process of the flexible quantum dot color film and reduces the cost compared with the traditional manufacturing method of the quantum dot color film.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. A manufacturing method of a flexible quantum dot color film is characterized by comprising the following steps:

depositing color films in the second deposition pit, wherein the color of the color film in the second deposition pit is red, green or blue, and the number of the red, green or blue color films is at least one; the height of each color film is smaller than or equal to that of the black matrix, so that the color films are mutually spaced;

depositing a water and oxygen barrier layer on each color film and the black matrix;

depositing a flexible substrate on the water oxygen barrier layer;

removing the master mask and the graphical mask, and surrounding each color film and the black matrix into a third deposition pit matched with the graphical mask in shape;

and depositing a quantum dot material with a luminescent color corresponding to the color of the color film in the third deposition pit to form a quantum dot light conversion layer, thereby obtaining the flexible quantum dot color film.

2. The method for manufacturing the flexible quantum dot color film as claimed in claim 1, wherein an area of a surface of the patterned mask in contact with the master is larger than an area of another surface of the patterned mask far from the master.

3. The method for manufacturing the flexible quantum dot color film as claimed in claim 2, wherein the longitudinal cross-sectional shape of the patterned mask is a trapezoid.

4. The method for manufacturing the flexible quantum dot color film according to claim 1, wherein the thickness of the patterned mask is 100nm to 1000 nm.

5. The method for manufacturing the flexible quantum dot color film as claimed in claim 1, wherein the thickness of the black matrix is 1500nm to 4000 nm.

6. The method for manufacturing the flexible quantum dot color film as claimed in claim 1, wherein a surface of the black matrix away from the master mask is in an arc shape protruding outward.

7. The method for manufacturing the flexible quantum dot color film according to claim 1, wherein the method for depositing the black matrix is a wet process.

8. The method of manufacturing a flexible quantum dot color film of claim 1, wherein the thickness of the color film is 1000nm to 3500 nm.

9. The method for manufacturing the flexible quantum dot color film according to claim 1, wherein one end of the color film close to the flexible substrate is larger than one end of the color film far away from the flexible substrate.

10. The method for manufacturing the flexible quantum dot color film according to any one of claims 1 to 9, wherein the quantum dot material is one or more of a II-VI group photoluminescence quantum dot material, a III-V group photoluminescence quantum dot material, and an IV-VI group photoluminescence quantum dot material.