CN108878245B - 闸阀装置和基板处理*** - Google Patents
闸阀装置和基板处理*** Download PDFInfo
- Publication number
- CN108878245B CN108878245B CN201810442611.XA CN201810442611A CN108878245B CN 108878245 B CN108878245 B CN 108878245B CN 201810442611 A CN201810442611 A CN 201810442611A CN 108878245 B CN108878245 B CN 108878245B
- Authority
- CN
- China
- Prior art keywords
- carrying
- out port
- gate valve
- upper portion
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 230000003014 reinforcing effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 51
- 239000007789 gas Substances 0.000 description 24
- 238000001020 plasma etching Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000002438 flame photometric detection Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K3/00—Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
- F16K3/30—Details
- F16K3/314—Forms or constructions of slides; Attachment of the slide to the spindle
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/04—Construction of housing; Use of materials therefor of sliding valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Valve Housings (AREA)
- Details Of Valves (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-094612 | 2017-05-11 | ||
JP2017094612A JP6899697B2 (ja) | 2017-05-11 | 2017-05-11 | ゲートバルブ装置及び基板処理システム |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108878245A CN108878245A (zh) | 2018-11-23 |
CN108878245B true CN108878245B (zh) | 2020-06-09 |
Family
ID=64333639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810442611.XA Active CN108878245B (zh) | 2017-05-11 | 2018-05-10 | 闸阀装置和基板处理*** |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6899697B2 (ja) |
KR (1) | KR102100032B1 (ja) |
CN (1) | CN108878245B (ja) |
TW (1) | TWI759470B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111326385B (zh) * | 2018-12-13 | 2022-06-24 | 江苏鲁汶仪器有限公司 | 一种真空腔室 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05196150A (ja) * | 1991-09-30 | 1993-08-06 | Tokyo Electron Yamanashi Kk | ゲートバルブ |
JP3043848U (ja) | 1997-05-28 | 1997-12-02 | 株式会社プレオ | つけまつ毛ケース |
JP3652688B2 (ja) * | 2003-02-27 | 2005-05-25 | 株式会社旭精機 | 開閉装置 |
US7214274B2 (en) | 2003-03-17 | 2007-05-08 | Tokyo Electron Limited | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers |
US20060045668A1 (en) * | 2004-07-19 | 2006-03-02 | Grabowski Al W | System for handling of wafers within a process tool |
JP5044931B2 (ja) * | 2005-10-31 | 2012-10-10 | 東京エレクトロン株式会社 | ガス供給装置及び基板処理装置 |
JP2007273620A (ja) * | 2006-03-30 | 2007-10-18 | Tokyo Electron Ltd | 基板搬送装置及び基板処理装置 |
JP2009230870A (ja) | 2008-03-19 | 2009-10-08 | Hitachi Plant Technologies Ltd | 有機elパネル組立てシステム |
JP5389684B2 (ja) * | 2010-01-29 | 2014-01-15 | 東京エレクトロン株式会社 | ゲートバルブ及びそれを用いた基板処理装置 |
JP5689483B2 (ja) * | 2011-01-18 | 2015-03-25 | 株式会社日立国際電気 | 基板処理装置、基板支持具及び半導体装置の製造方法 |
JP6184832B2 (ja) * | 2013-10-22 | 2017-08-23 | 東京エレクトロン株式会社 | ゲートバルブ装置及びプラズマ処理装置 |
KR101604178B1 (ko) | 2014-01-06 | 2016-03-16 | 가톨릭대학교 산학협력단 | 약물에 의한 간 손상의 예측 및 진단을 위한 바이오마커 |
JP6557523B2 (ja) * | 2015-06-19 | 2019-08-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2017
- 2017-05-11 JP JP2017094612A patent/JP6899697B2/ja active Active
-
2018
- 2018-04-27 TW TW107114394A patent/TWI759470B/zh active
- 2018-05-03 KR KR1020180050946A patent/KR102100032B1/ko active IP Right Grant
- 2018-05-10 CN CN201810442611.XA patent/CN108878245B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TWI759470B (zh) | 2022-04-01 |
CN108878245A (zh) | 2018-11-23 |
KR20180124730A (ko) | 2018-11-21 |
JP2018189218A (ja) | 2018-11-29 |
KR102100032B1 (ko) | 2020-04-10 |
JP6899697B2 (ja) | 2021-07-07 |
TW201901838A (zh) | 2019-01-01 |
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