CN108807557A - 提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备 - Google Patents
提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备 Download PDFInfo
- Publication number
- CN108807557A CN108807557A CN201810540168.XA CN201810540168A CN108807557A CN 108807557 A CN108807557 A CN 108807557A CN 201810540168 A CN201810540168 A CN 201810540168A CN 108807557 A CN108807557 A CN 108807557A
- Authority
- CN
- China
- Prior art keywords
- graphene
- layer
- solar cell
- antireflective film
- schottky junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 120
- 150000001875 compounds Chemical class 0.000 title claims abstract description 74
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 50
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 60
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 238000005566 electron beam evaporation Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明属于太阳电池的技术领域,公开了提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备。复合减反膜,包括依次叠加的三氧化钼层和氧化锆层,三氧化钼层设置于石墨烯肖特基结太阳电池的石墨烯层上方。石墨烯肖特基结太阳电池由下至上依次包括底电极、GaAs衬底、石墨烯层、顶电极、三氧化钼层、氧化锆层。本发明在石墨烯肖特基结太阳能电池中引入复合减反膜,提高了电池的开路电压,并且有效提高太阳电池的短路电流。本发明的方法简单有效,成本低,通过复合减反膜的引入使得电池的光电转换效率明显提高。
Description
技术领域
本发明属于太阳能电池的技术领域,具体涉及一种提高石墨烯肖特基结太阳电池性能的复合减反膜、石墨烯肖特基结太阳电池及其制备方法。
背景技术
石墨烯是一种由碳原子形成的蜂窝状平面薄膜,具有高电导率,高透光度,功函数可调等特点,广泛应用在太阳能电池上。石墨烯具有类金属的性质,功函数大于GaAs,与GaAs接触可以形成肖特基接触,利用肖特基结可以制备太阳能电池。石墨烯-GaAs肖特基结太阳电池,相比主流的硅太阳能电池具有工艺简单、成本低廉等优点,具有很好的应用前景。但是,常规的石墨烯肖特基结太阳电池由于GaAs表面对太阳光的反射,降低了对太阳光的吸收效率,所以造成电池的短路电路密度不够高,因此研究如何提高太阳电池对太阳光谱的吸收效率对于提高太阳电池的短路电流密度进而提高电池的光电转换效率具有重要的实用价值。
发明内容
为了克服现有技术的缺点与不足,本发明的目的在于一种提高石墨烯肖特基结太阳电池性能的复合减反膜。本发明的复合减反膜,不仅工艺简单成本低,而且可以有效提高石墨烯肖特基结太阳电池的光电转换效率。
本发明的另一目的在于提供一种包含复合减反膜的石墨烯肖特基结太阳电池及其制备方法。
本发明的目的通过以下技术方案实现:
一种提高石墨烯肖特基结太阳电池性能的复合减反膜,包括依次叠加的三氧化钼层和氧化锆层,三氧化钼层设置于石墨烯肖特基结太阳电池的石墨烯层上方。
一种包含复合减反膜的石墨烯肖特基结太阳电池,包括上述复合减反膜。所述包含复合减反膜的石墨烯肖特基结太阳电池,由下至上依次包括底电极、GaAs衬底、石墨烯层、顶电极、三氧化钼层、氧化锆层。所述顶电极裸露或被引出氧化锆层表面,即有顶电极未被三氧化钼层和氧化锆层覆盖。
顶电极未完全覆盖石墨烯层。
所述底电极为金电极或银电极,电极厚度为20~300纳米。
所述顶电极为导电银胶。
所述GaAs衬底为N型GaAs片,掺杂浓度为1×1017~4×1018cm-3。GaAs衬底的面积大小约为1-8英寸。
所述石墨烯的层数为2~10层。
三氧化钼层与氧化锆层组成为复合减反膜,其中三氧化钼层的厚度为2~20nm,优选为5nm,氧化锆的厚度为30~200nm,优选为50纳米。
所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,包括以下步骤:
(1)底电极的制备:在GaAs衬底的一表面蒸镀底电极;步骤(1)中蒸镀温度为10~80℃,蒸镀时间为10~60分钟,底电极厚度为20~300纳米;
(2)石墨烯层的制备:将GaAs衬底中镀有底电极的一面称为下表面,另一面成为上表面;将石墨烯转移至GaAs衬底的上表面;
(3)顶电极的制备:在石墨烯层上制备顶电极;
(4)复合减反膜的制备:利用电子束蒸发法,在未被顶电极覆盖的石墨烯层上和顶电极上生长三氧化钼层,然后在三氧化钼层上生长氧化锆层,获得复合减反膜层,此时顶电极需被引出复合减反膜层表面;在未被顶电极覆盖的石墨烯层上或未被顶电极覆盖的石墨烯层和部分顶电极上生长三氧化钼层,然后在三氧化钼层上生长氧化锆层,获得复合减反膜层,此时顶电极裸露。
步骤(1)中蒸镀有底电极的GaAs衬底可切割成所需形状;切割完后需进行清洗,去除表面的杂质。
步骤(2)中所述石墨烯转移是指将石墨烯采用化学气相沉积法在铜箔衬底上生长,石墨烯的层数为2-10层,采用FeCl3溶液将铜箔腐蚀掉后将石墨烯转移到水中并使石墨烯漂浮在水中,利用水分子的范德华力,使石墨烯紧密贴合在GaAs衬底的上表面,自然晾干;
石墨烯转移完后,需进行加热干燥,所述加热干燥的温度为70-200℃,加热干燥的时间为5-30分钟。
步骤(4)中三氧化钼层生长的条件为生长温度为20-60℃,生长时间为4-40分钟,三氧化钼的厚度为2-20纳米;氧化锆的生长温度为30-100℃,生长时间为10-50分钟,氧化锆的厚度为30-200纳米。
步骤(3)中顶电极为导电银胶,导电银胶的形状为环形,长条形,也可以为圆形或者点状。导电银胶的厚度为0.2-3微米。导电银胶需在20-100℃下烘烤4-20min充分固化。
本发明在GaAs表面转移一层石墨烯形成肖特结,然后通过电子束蒸发在石墨烯表面沉积一层三氧化钼薄膜,在三氧化钼薄膜表面沉积一层氧化锆薄膜,三氧化钼一方面可以对石墨烯进行掺杂,通过改变石墨烯的功函数提高石墨烯与GaAs之间的肖特基势垒;同时三氧化钼/氧化锆复合减反膜可以有效提高对太阳光谱的吸收效率,从而有效提高石墨烯肖特基结太阳电池的光电转换效率。
与现有技术相比,本发明具有以下优点和有益效果:
(1)本发明通过在石墨烯肖特基结太阳能电池中引入复合减反膜,通过复合减反膜一方面可以实现对石墨烯的掺杂,提高石墨烯与GaAs之间的肖特基势垒,提高电池的开路电压;另一方面复合减反膜的引入可以有效提高对太阳光的吸收效率,从而有效提高太阳电池的短路电流,最终实现提高太阳电池光电转换效率的目的;
(2)本发明的制备方法简单有效,器件制备工艺成本低,通过复合减反膜的引入使得电池的光电转换效率明显提高。
附图说明
图1为本发明的含复合减反膜的石墨烯肖特基结太阳电池的结构示意图;
图2为实施例1的含复合减反膜的石墨烯肖特基结太阳电池的电压-电流密度关系曲线图;其中无复合减反膜是指没有复合减反膜的石墨烯肖特基结太阳电池,氧化锆减反膜是指以氧化锆膜为减反膜的石墨烯肖特基结太阳电池,三氧化钼/氧化锆复合减反射膜是指实施例1的含复合减反膜的石墨烯肖特基结太阳电池即含有以三氧化钼和氧化锆所组成的复合减反膜的石墨烯肖特基结太阳电池。
具体实施方式
下面结合实施例和附图,对本发明作进一步地详细说明,但本发明的实施方式不限于此。
本发明的包含复合减反膜的石墨烯肖特基结太阳电池的结构示意图如图1所示,由下至上依次包括底电极1、GaAs衬底2、石墨烯层3、顶电极4、复合减反射膜;所述复合减反膜包括三氧化钼层5和氧化锆层6,三氧化钼层5设置于未被顶电极覆盖的石墨烯层上和顶电极上,顶电极有部分未被复合减反膜覆盖或者顶电极被引出氧化锆层的表面。
实施例1
本实施例的包含复合减反膜的石墨烯-GaAs肖特基结太阳能电池,由下至上依次包括底电极金、GaAs外延片、石墨烯、导电银胶顶电极、三氧化钼和氧化锆。
所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,包括以下步骤:
(1)背电极的制备:将2英寸GaAs衬底固定在圆盘上,采用电子束蒸发***,在GaAs衬底的背面蒸镀一层Au电极,蒸镀温度为40℃,蒸镀时间为30分钟,Au电极厚度为120纳米;所述GaAs衬底为N型GaAs片,掺杂浓度为1×1017~4×1018cm-3;
(2)切割:将蒸镀有背电极的GaAs衬底采用激光划片切割成一平方厘米尺寸的片子;
(3)清洗:取切割完成后的衬底,分别采用丙酮,异丙醇,超纯水依次超声清洗10分钟后用吹风机将表面吹干待用;
(4)转移石墨烯:石墨烯采用化学气相沉积在铜箔衬底上生长,石墨烯的层数为5层,采用FeCl3溶液将铜箔腐蚀掉后将石墨烯转移到清水并使石墨烯漂浮在清水中,用镊子夹住GaAs衬底的一角,利用水分子的范德华力,使石墨烯紧密贴合在GaAs衬底的表面,自然晾干半小时;
(5)后处理:将转移完石墨烯的衬底放在加热板上,用80℃的温度烘烤20分钟,去除石墨烯里面的水分,使石墨烯更紧密的与GaAs衬底表面贴合;
(6)制备顶电极:首先围绕石墨烯边缘贴胶带,然后在石墨烯边缘用注射器做导电银胶,导电银胶的形状为长条形,也可以为圆形或者点状;导电银胶的厚度为0.5微米,60℃下烘烤导电银胶约10min充分固化导电银胶;
(7)制备复合减反膜:将制备完顶电极的衬底放入电子束蒸镀***中,利用电子束蒸发制备三氧化钼/氧化锆复合减反膜:首先在未被顶电极覆盖的石墨烯表面上或未被顶电极覆盖的石墨烯表面和部分顶电极上生长三氧化钼层,生长温度为30℃,生长时间为8分钟,三氧化钼的厚度为6纳米;然后在三氧化钼层上蒸镀氧化锆,氧化锆的生长温度为80℃,生长时间为15分钟,氧化锆的厚度为50纳米。
图2为实施例1的含复合减反膜的石墨烯肖特基结太阳电池的电压-电流密度关系曲线图;其中无复合减反膜是指没有复合减反膜的石墨烯肖特基结太阳电池,氧化锆减反膜是指以氧化锆膜为减反膜的石墨烯肖特基结太阳电池,三氧化钼/氧化锆复合减反射膜是指实施例1的含复合减反膜的石墨烯肖特基结太阳电池。可以看出,相对没有复合减反膜的对比电池,加入氧化锆减反膜的电池电流密度具有一定程度的提高,但是开路电压有所下降。而包含三氧化钼/氧化锆复合减反膜的石墨烯肖特基结太阳电池的短路电流和开路电压都比对照电池有明显提高,因此电池的光电转换效率明显提高。
本发明通过电子束蒸发在石墨烯表面沉积一层三氧化钼薄膜,在三氧化钼薄膜表面沉积一层氧化锆薄膜,从而制备出复合减反膜结构,复合减反膜一方面可以有效提高太阳电池的开路电压,同时通过复合减反膜的制备,有效提高对太阳光谱的吸收效率,提高电池的短路电路密度,从而有效提高石墨烯肖特基结太阳电池的光电转换效率。因此,本发明制备的一种提高石墨烯肖特基结太阳电池性能的复合减反膜,是一种提高石墨烯肖特基结太阳电池光电转换效率的有效方法。
实施例2
本实施例的包含复合减反膜的石墨烯-GaAs肖特基结太阳能电池,由下至上依次包括底电极金、GaAs衬底、石墨烯层、顶电极、三氧化钼层和氧化锆层。
所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,包括以下步骤:
(1)背电极的制备:将2英寸GaAs衬底固定在圆盘上,采用电子束蒸发***,在GaAs衬底的背面蒸镀一层Au电极,蒸镀温度为50℃,蒸镀时间为40分钟,Au电极厚度为150纳米;所述GaAs衬底为N型GaAs片,掺杂浓度为1×1017~4×1018cm-3;
(2)转移石墨烯:石墨烯采用化学气相沉积在铜箔衬底上生长,石墨烯的层数为2层,采用FeCl3溶液将铜箔腐蚀掉后将石墨烯转移到清水并使石墨烯漂浮在清水中,利用水分子的范德华力,使石墨烯紧密贴合在GaAs衬底的表面,自然晾干半小时,加热干燥(80℃烘烤20分钟),使石墨烯与GaAs衬底紧密贴合;
(3)制备顶电极:在石墨烯上涂覆导电银胶,导电银胶的形状为长条形,也可以为圆形或者点状,导电银胶的厚度为1微米,60℃下烘烤导电银胶约10min充分固化导电银胶;
(4)制备复合减反膜:将制备完顶电极的衬底放入电子束蒸镀***中,利用电子束蒸发制备三氧化钼/氧化锆复合减反膜:首先在未被顶电极覆盖的石墨烯表面上或未被顶电极覆盖的石墨烯表面和部分顶电极上生长三氧化钼层;三氧化钼层的生长温度为30℃,生长时间为10分钟,三氧化钼的厚度为8纳米;然后在三氧化钼层上蒸镀氧化锆,氧化锆的生长温度为80℃,生长时间为25分钟,氧化锆的厚度为70纳米。
实施例3
本实施例的包含复合减反膜的石墨烯-GaAs肖特基结太阳能电池的结构示意图,由下至上依次包括底电极金、GaAs衬底、石墨烯层、三氧化钼层、氧化锆层和顶电极。
所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,包括以下步骤:
(1)背电极的制备:将2英寸GaAs衬底固定在圆盘上,采用电子束蒸发***,在GaAs衬底的背面蒸镀一层Au电极,蒸镀温度为60℃,蒸镀时间为20分钟,Au电极厚度为80纳米;所述GaAs衬底为N型GaAs片,掺杂浓度为1×1017~4×1018cm-3;
(2)转移石墨烯:石墨烯采用化学气相沉积在铜箔衬底上生长,石墨烯的层数为6层,采用FeCl3溶液将铜箔腐蚀掉后将石墨烯转移到超纯水并使石墨烯漂浮在超纯水中,利用水分子的范德华力,使石墨烯紧密贴合在GaAs衬底的表面,自然晾干半小时,加热干燥(65℃烘烤20分钟),使石墨烯与GaAs衬底紧密贴合;
(3)制备顶电极:在石墨烯上涂覆导电银胶,导电银胶的形状为长条形,尺寸为1.5×0.8平方毫米,导电银胶的厚度为1.5微米,55℃下烘烤导电银胶约10分钟充分固化导电银胶;
(7)制备复合减反膜:将制备完顶电极的衬底放入电子束蒸镀***中,利用电子束蒸发制备三氧化钼/氧化锆复合减反膜:首先在未被顶电极覆盖的石墨烯表面上和顶电极上生长三氧化钼层;三氧化钼层的生长温度为30℃,生长时间为10分钟,三氧化钼的厚度为8纳米;然后在三氧化钼层上蒸镀氧化锆,氧化锆的生长温度为80℃,生长时间为25分钟,氧化锆的厚度为70纳米;同时顶电极需引出氧化锆的表面。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受所述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (9)
1.一种提高石墨烯肖特基结太阳电池性能的复合减反膜,其特征在于:包括依次叠加的三氧化钼层和氧化锆层,三氧化钼层设置于石墨烯肖特基结太阳电池的石墨烯层上方。
2.一种包含复合减反膜的石墨烯肖特基结太阳电池,其特征在于:包括权利要求1所述复合减反射膜。
3.根据权利要求2所述包含复合减反膜的石墨烯肖特基结太阳电池,其特征在于:由下至上依次包括底电极、GaAs衬底、石墨烯层、顶电极、三氧化钼层、氧化锆层。
4.根据权利要求2所述包含复合减反膜的石墨烯肖特基结太阳电池,其特征在于:顶电极未完全覆盖石墨烯层,三氧化钼层与氧化锆层组成为复合减反膜,顶电极有部分未被复合减反膜覆盖或者顶电极被引出氧化锆层的表面。
5.根据权利要求2所述包含复合减反膜的石墨烯肖特基结太阳电池,其特征在于:三氧化钼层的厚度为2~20nm,氧化锆的厚度为30~200nm;
所述GaAs衬底为N型GaAs片,掺杂浓度为1×1017~4×1018cm-3。
6.根据权利要求2所述包含复合减反膜的石墨烯肖特基结太阳电池,其特征在于:所述底电极为金电极或银电极,电极厚度为20~300纳米;
所述顶电极为导电银胶;
所述石墨烯的层数为2~10层。
7.根据权利要求2~6任一项所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,其特征在于:包括以下步骤:
(1)底电极的制备:在GaAs衬底的一表面蒸镀底电极;
(2)石墨烯层的制备:将GaAs衬底中镀有底电极的一面称为下表面,另一面成为上表面;将石墨烯转移至GaAs衬底的上表面;
(3)顶电极的制备:在石墨烯层上制备顶电极;
(4)复合减反膜的制备:利用电子束蒸发法,在未被顶电极覆盖的石墨烯层上和顶电极上生长三氧化钼层,然后在三氧化钼层上生长氧化锆层,获得复合减反膜层,此时顶电极需被引出复合减反膜层表面;在未被顶电极覆盖的石墨烯层上或未被顶电极覆盖的石墨烯层和部分顶电极上生长三氧化钼层,然后在三氧化钼层上生长氧化锆层,获得复合减反膜层,此时顶电极裸露。
8.根据权利要求7所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,其特征在于:步骤(4)中三氧化钼层生长的条件为生长温度为20~60℃,三氧化钼的厚度为2~20纳米;氧化锆的生长温度为30~100℃,氧化锆的厚度为30~200纳米。
9.根据权利要求7所述包含复合减反膜的石墨烯肖特基结太阳电池的制备方法,其特征在于:步骤(1)中蒸镀温度为10~80℃,蒸镀时间为10~60分钟。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810540168.XA CN108807557B (zh) | 2018-05-30 | 2018-05-30 | 提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810540168.XA CN108807557B (zh) | 2018-05-30 | 2018-05-30 | 提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108807557A true CN108807557A (zh) | 2018-11-13 |
CN108807557B CN108807557B (zh) | 2020-12-22 |
Family
ID=64089552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810540168.XA Active CN108807557B (zh) | 2018-05-30 | 2018-05-30 | 提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108807557B (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740382B2 (en) * | 1997-09-09 | 2004-05-25 | Hitachi, Ltd. | Information recording medium |
US20070235771A1 (en) * | 2006-04-05 | 2007-10-11 | Yan-Hsiu Liu | Semiconductor image sensor and method for fabricating the same |
CN103398483A (zh) * | 2013-07-19 | 2013-11-20 | 中国科学院广州能源研究所 | 一种吸收层由含硼化合物构成的太阳能中高温选择性吸收涂层及其制备方法 |
CN104112780A (zh) * | 2014-07-31 | 2014-10-22 | 阿特斯(中国)投资有限公司 | 一种太阳能电池组件及其制造工艺 |
CN104267498A (zh) * | 2014-10-14 | 2015-01-07 | 福耀玻璃工业集团股份有限公司 | 一种抬头显示*** |
CN106057830A (zh) * | 2016-08-19 | 2016-10-26 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及阵列基板制备方法 |
CN106449790A (zh) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池 |
CN107076875A (zh) * | 2014-05-12 | 2017-08-18 | 康宁股份有限公司 | 耐用的减反射制品 |
CN107068866A (zh) * | 2016-12-27 | 2017-08-18 | 济南大学 | 一种半透明钙钛矿太阳能电池及其组装技术 |
-
2018
- 2018-05-30 CN CN201810540168.XA patent/CN108807557B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6740382B2 (en) * | 1997-09-09 | 2004-05-25 | Hitachi, Ltd. | Information recording medium |
US20070235771A1 (en) * | 2006-04-05 | 2007-10-11 | Yan-Hsiu Liu | Semiconductor image sensor and method for fabricating the same |
CN103398483A (zh) * | 2013-07-19 | 2013-11-20 | 中国科学院广州能源研究所 | 一种吸收层由含硼化合物构成的太阳能中高温选择性吸收涂层及其制备方法 |
CN107076875A (zh) * | 2014-05-12 | 2017-08-18 | 康宁股份有限公司 | 耐用的减反射制品 |
CN104112780A (zh) * | 2014-07-31 | 2014-10-22 | 阿特斯(中国)投资有限公司 | 一种太阳能电池组件及其制造工艺 |
CN104267498A (zh) * | 2014-10-14 | 2015-01-07 | 福耀玻璃工业集团股份有限公司 | 一种抬头显示*** |
CN106057830A (zh) * | 2016-08-19 | 2016-10-26 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及阵列基板制备方法 |
CN106449790A (zh) * | 2016-12-09 | 2017-02-22 | 中国科学院微电子研究所 | 一种石墨烯/砷化镓太阳电池 |
CN107068866A (zh) * | 2016-12-27 | 2017-08-18 | 济南大学 | 一种半透明钙钛矿太阳能电池及其组装技术 |
Also Published As
Publication number | Publication date |
---|---|
CN108807557B (zh) | 2020-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2000014812A1 (en) | Photovaltaic devices comprising zinc stannate buffer layer and method for making | |
CN111682088A (zh) | 一种基于范德华异质结的隧穿型光电探测器及其制备方法 | |
CN103227230B (zh) | 一种侧向生长ZnMgO纳米线日盲区紫外探测器及其制备方法 | |
CN109449214A (zh) | 一种氧化镓半导体肖特基二极管及其制作方法 | |
CN104300032A (zh) | 一种单晶硅太阳能离子注入工艺 | |
CN108493296A (zh) | 一种柔性CdTe薄膜太阳电池及其制备方法和应用 | |
CN111129169B (zh) | 一种基于石墨烯/二硒化钨/二硒化锡叠层结构的光电器件及其制备方法 | |
CN111799378A (zh) | 一种基于二维材料与氮化镓薄膜双异质结的光电探测器及其制备方法 | |
CN110165011B (zh) | 一种无损转移碳纳米管薄膜制备异质结太阳能电池的方法 | |
CN110993707B (zh) | 基于氧化镓多层堆叠结构的pin二极管及其制备方法 | |
CN109768111A (zh) | 一种GaAs纳米柱-石墨烯肖特基结太阳能电池及其制备方法 | |
Wu et al. | CdS/CdTe thin-film solar cell with a zinc stannate buffer layer | |
CN109273551B (zh) | 一种石墨烯/GaInP多结异质太阳能电池及其制备方法 | |
CN110718596A (zh) | Pn结增强的黑硅肖特基结红外探测器及其制备方法 | |
CN108807557A (zh) | 提高石墨烯肖特基结太阳电池性能的复合减反膜、太阳电池及制备 | |
CN113471327B (zh) | 基于双栅压调控的高增益石墨烯光电探测器及其制备方法 | |
CN217182188U (zh) | 一种钙钛矿/钙钛矿/硅-锗基三结叠层太阳能电池 | |
JPH0555615A (ja) | 薄膜太陽電池の製造方法 | |
CN111081886B (zh) | 基于氧化镓钙钛矿多层堆叠结构的pin二极管及其制备方法 | |
CN101459206A (zh) | 高效多结太阳能电池的制造方法 | |
CN106374001B (zh) | 具有锥形背散射层的GaAs薄膜太阳电池及其制备方法 | |
CN107742650A (zh) | 一种具有绒面背接触层的碲化镉太阳能电池及其制备方法 | |
CN104505461B (zh) | 基于有机聚合物的多层减反膜混合太阳能电池及制备方法 | |
CN108538937B (zh) | 一种太阳电池及其制备方法 | |
CN111916521A (zh) | 一种具有界面等离激元效应的双结GaAs/Si肖特基结太阳电池及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |