CN108807557A - Improve compound antireflective film, solar cell and the preparation of graphene schottky junction solar cell performance - Google Patents
Improve compound antireflective film, solar cell and the preparation of graphene schottky junction solar cell performance Download PDFInfo
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- CN108807557A CN108807557A CN201810540168.XA CN201810540168A CN108807557A CN 108807557 A CN108807557 A CN 108807557A CN 201810540168 A CN201810540168 A CN 201810540168A CN 108807557 A CN108807557 A CN 108807557A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 120
- 150000001875 compounds Chemical class 0.000 title claims abstract description 74
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 50
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 description 60
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 238000005566 electron beam evaporation Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 4
- 238000005411 Van der Waals force Methods 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 4
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention belongs to the technical field of solar cell, compound antireflective film, solar cell and the preparation for improving graphene schottky junction solar cell performance are disclosed.Compound antireflective film, including the molybdenum trioxide layer and zirconium oxide layer that are sequentially overlapped, molybdenum trioxide layer are set to above the graphene layer of graphene schottky junction solar cell.Graphene schottky junction solar cell includes hearth electrode, GaAs substrates, graphene layer, top electrode, molybdenum trioxide layer, zirconium oxide layer successively from the bottom to top.The present invention introduces compound antireflective film in graphene schottky junction solar cell, improves the open-circuit voltage of battery, and effectively improves the short circuit current of solar cell.The method of the present invention is simple and effective, at low cost, by the introducing of compound antireflective film so that the photoelectric conversion efficiency of battery significantly improves.
Description
Technical field
The invention belongs to the technical fields of solar cell, and in particular to a kind of raising graphene schottky junction solar cell
The compound antireflective film of performance, graphene schottky junction solar cell and preparation method thereof.
Background technology
Graphene is a kind of cellular flat film formed by carbon atom, has high conductivity, high-transmittance, work function
The features such as adjustable, extensively using on the solar cell.There is graphene the property of metalloid, work function to be more than GaAs, with
GaAs contacts can form Schottky contacts, and solar cell can be prepared using schottky junction.Graphene-GaAs schottky junctions
Solar cell, compared to mainstream silicon solar cell have many advantages, such as it is simple for process, of low cost, have well apply before
Scape.But reflection of the conventional graphene schottky junction solar cell due to the surfaces GaAs to sunlight, it reduces to sunlight
Absorption efficiency, so cause the short circuit current density of battery not high enough, therefore how research improves solar cell to sunlight
The absorption efficiency of spectrum is for improving the short-circuit current density of solar cell and then improving the photoelectric conversion efficiency of battery with important
Practical value.
Invention content
In order to overcome the disadvantages and deficiencies of the prior art, it is an object of the invention to a kind of raising graphene schottky junctions too
The compound antireflective film of positive battery performance.The compound antireflective film of the present invention, it is not only simple for process at low cost, but also can effectively improve
The photoelectric conversion efficiency of graphene schottky junction solar cell.
Another object of the present invention is to provide a kind of graphene schottky junction solar cell comprising compound antireflective film and
Preparation method.
The purpose of the present invention is achieved through the following technical solutions：
It is a kind of to improve the compound antireflective film of graphene schottky junction solar cell performance, including the molybdenum trioxide being sequentially overlapped
Layer and zirconium oxide layer, molybdenum trioxide layer are set to above the graphene layer of graphene schottky junction solar cell.
A kind of graphene schottky junction solar cell comprising compound antireflective film, including above-mentioned compound antireflective film.The packet
Graphene schottky junction solar cell containing compound antireflective film includes hearth electrode, GaAs substrates, graphene successively from the bottom to top
Layer, top electrode, molybdenum trioxide layer, zirconium oxide layer.The top electrode is exposed or is brought out zirconium oxide layer surface, that is, has top electrode not
It is covered by molybdenum trioxide layer and zirconium oxide layer.
Graphene layer is not completely covered for top electrode.
The hearth electrode is gold electrode or silver electrode, and thickness of electrode is 20~300 nanometers.
The top electrode is conductive silver glue.
The GaAs substrates are N-type GaAs pieces, and doping concentration is 1 × 1017~4 × 1018cm-3.The area of GaAs substrates is big
It is about 1-8 inches small.
The number of plies of the graphene is 2~10 layers.
Molybdenum trioxide layer becomes compound antireflective film with zirconium oxide layer group, and the wherein thickness of molybdenum trioxide layer is 2~20nm, excellent
It is selected as 5nm, the thickness of zirconium oxide is 30~200nm, preferably 50 nanometers.
The preparation method of the graphene schottky junction solar cell comprising compound antireflective film, includes the following steps：
(1) preparation of hearth electrode：Hearth electrode is deposited on a surface of GaAs substrates；In step (1) vapor deposition temperature be 10~
80 DEG C, evaporation time is 10~60 minutes, and hearth electrode thickness is 20~300 nanometers；
(2) preparation of graphene layer：The one side that hearth electrode is coated in GaAs substrates is known as lower surface, another side becomes upper
Surface；Graphene is transferred to the upper surface of GaAs substrates；
(3) preparation of top electrode：Top electrode is prepared on graphene layer；
(4) preparation of compound antireflective film：Using electron-beam vapor deposition method, on the graphene layer of top electrode covering and do not pushed up
Molybdenum trioxide layer is grown on electrode, then zirconium oxide layer is grown on molybdenum trioxide layer, obtains compound anti-reflection film layer, at this time top electricity
Pole need to be brought out compound anti-reflection film surface；Not by the graphene layer of top electrode covering or by the graphite of top electrode covering
Molybdenum trioxide layer is grown on alkene layer and part top electrode, is then grown zirconium oxide layer on molybdenum trioxide layer, is obtained compound anti-reflection
Film layer, top electrode is exposed at this time.
Vapor deposition has the GaAs substrates of hearth electrode cleavable at required shape in step (1)；It needs to be cleaned after having cut, go
Except the impurity on surface.
The transfer of graphene described in step (2) refers to that graphene is raw on copper foil substrate using chemical vapour deposition technique
Long, the number of plies of graphene is 2-10 layers, using FeCl3Solution transfers graphene in water after eroding copper foil and makes graphite
Alkene floats in water, using the Van der Waals force of hydrone, so that graphene is fitted tightly over the upper surface of GaAs substrates, dries in the air naturally
It is dry；
It after graphene has shifted, need to be thermally dried, the temperature of the heat drying is 70-200 DEG C, heat drying
Time is 5-30 minutes.
It is 20-60 DEG C that the condition that molybdenum trioxide layer is grown in step (4), which is growth temperature, and growth time is 4-40 minutes,
The thickness of molybdenum trioxide is 2-20 nanometers；The growth temperature of zirconium oxide is 30-100 DEG C, and growth time is 10-50 minutes, oxidation
The thickness of zirconium is 30-200 nanometers.
Top electrode is conductive silver glue in step (3), and the shape of conductive silver glue is annular, strip, or it is round or
Person is dotted.The thickness of conductive silver glue is 0.2-3 microns.Conductive silver glue need to toast 4-20min at 20-100 DEG C and fully cure.
The present invention shifts a layer graphene on the surfaces GaAs and forms Xiao Tejie, then by electron beam evaporation in graphene table
Face deposits one layer of Molybdenum Oxide Thin Films by Sol-Gel, deposits one layer of zirconia film on Molybdenum Oxide Thin Films by Sol-Gel surface, molybdenum trioxide on the one hand can
To be doped to graphene, the work function by changing graphene improves the Schottky barrier between graphene and GaAs；Together
When the compound antireflective film of molybdenum trioxide/zirconium oxide can effectively improve the absorption efficiency to solar spectrum, to effectively improve graphite
The photoelectric conversion efficiency of alkene schottky junction solar cell.
Compared with prior art, the present invention has the following advantages and beneficial effect：
(1) present invention passes through compound anti-reflection by introducing compound antireflective film in graphene schottky junction solar cell
On the one hand the doping to graphene may be implemented in film, improve the Schottky barrier between graphene and GaAs, improve opening for battery
Road voltage；On the other hand the introducing of compound antireflective film can effectively improve the absorption efficiency to sunlight, to effectively improve too
The short circuit current in positive electricity pond, it is final to realize the purpose for improving photoelectric conversion efficiency of the solar battery；
(2) preparation method of the invention is simple and effective, and device preparation technology is at low cost, is made by the introducing of compound antireflective film
The photoelectric conversion efficiency for obtaining battery significantly improves.
Description of the drawings
Fig. 1 is the structural schematic diagram of the graphene schottky junction solar cell containing compound antireflective film of the present invention；
Fig. 2 is the voltage-current density relationship of the graphene schottky junction solar cell containing compound antireflective film of embodiment 1
Curve graph；Wherein refer to the graphene schottky junction solar cell of no compound antireflective film, zirconium oxide anti-reflection without compound antireflective film
Film refers to the graphene schottky junction solar cell using zirconium oxide film as antireflective film, the compound antireflective coating of molybdenum trioxide/zirconium oxide
Refer to embodiment 1 the graphene schottky junction solar cell containing compound antireflective film i.e. contain with molybdenum trioxide and zirconium oxide institute group
At compound antireflective film graphene schottky junction solar cell.
Specific implementation mode
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
The present invention the graphene schottky junction solar cell comprising compound antireflective film structural schematic diagram as shown in Figure 1,
Include hearth electrode 1, GaAs substrates 2, graphene layer 3, top electrode 4, compound antireflective coating successively from the bottom to top；The compound anti-reflection
Film includes molybdenum trioxide layer 5 and zirconium oxide layer 6, and molybdenum trioxide layer 5 is set on the graphene layer not covered by top electrode and pushes up
On electrode, top electrode has that part is not covered by compound antireflective film or top electrode is brought out the surface of zirconium oxide layer.
Embodiment 1
Graphene-GaAs schottky junction the solar cells comprising compound antireflective film of the present embodiment, from the bottom to top successively
Including hearth electrode gold, GaAs epitaxial wafers, graphene, conductive silver glue top electrode, molybdenum trioxide and zirconium oxide.
The preparation method of the graphene schottky junction solar cell comprising compound antireflective film, includes the following steps：
(1) preparation of back electrode：2 inches of GaAs substrates are fixed on disk, using electron beam evaporation system, in GaAs
Layer of Au electrode is deposited in the back side of substrate, and vapor deposition temperature is 40 DEG C, and evaporation time is 30 minutes, and Au thickness of electrode is 120 nanometers；
The GaAs substrates are N-type GaAs pieces, and doping concentration is 1 × 1017~4 × 1018cm-3；
(2) it cuts：Vapor deposition there is into the piece that the GaAs substrates of back electrode use laser scribing to cut into one square centimeter of size
Son；
(3) it cleans：The substrate after the completion of cutting is taken, acetone, isopropanol is respectively adopted, ultra-pure water is cleaned by ultrasonic 10 points successively
Zhong Houyong hair-dryers dry up surface for use；
(4) graphene is shifted：For graphene using chemical vapor deposition in copper foil Grown, the number of plies of graphene is 5
Layer, using FeCl3Solution transfers graphene to clear water and graphene is made to swim in clear water after eroding copper foil, use tweezers
Clamp GaAs substrates one jiao makes graphene be fitted tightly over the surface of GaAs substrates using the Van der Waals force of hydrone, natural
Dry half an hour；
(5) it post-processes：The substrate for having shifted graphene is put on hot plate, is toasted 20 minutes, is gone with 80 DEG C of temperature
Except the moisture inside graphene, keeps graphene closer and be bonded with GaAs substrate surfaces；
(6) top electrode is prepared：It is first about graphene edge to tape, then does conduction with syringe in graphene edge
The shape of elargol, conductive silver glue is strip, or round or dotted；The thickness of conductive silver glue is 0.5 micron, 60 DEG C
The abundant curing conductive elargol of lower baking conductive silver glue about 10min；
(7) compound antireflective film is prepared：The substrate for having prepared top electrode is put into electron beam evaporation plating system, electron beam is utilized
Evaporation prepares the compound antireflective film of molybdenum trioxide/zirconium oxide：First not by top electrode covering graphene surface on or do not pushed up
Molybdenum trioxide layer is grown on the graphene surface and part top electrode of electrode covering, growth temperature is 30 DEG C, and growth time is 8 points
The thickness of clock, molybdenum trioxide is 6 nanometers；Then zirconium oxide is deposited on molybdenum trioxide layer, the growth temperature of zirconium oxide is 80 DEG C,
Growth time is 15 minutes, and the thickness of zirconium oxide is 50 nanometers.
Fig. 2 is the voltage-current density relationship of the graphene schottky junction solar cell containing compound antireflective film of embodiment 1
Curve graph；Wherein refer to the graphene schottky junction solar cell of no compound antireflective film, zirconium oxide anti-reflection without compound antireflective film
Film refers to the graphene schottky junction solar cell using zirconium oxide film as antireflective film, the compound antireflective coating of molybdenum trioxide/zirconium oxide
It refer to the graphene schottky junction solar cell containing compound antireflective film of embodiment 1.As can be seen that being relatively free of compound antireflective film
Control cell, the Cell current density tool that zirconium oxide antireflective film is added is improved to some extent, but open-circuit voltage is
Decline.And include the short circuit current and open circuit of the graphene schottky junction solar cell of the compound antireflective film of molybdenum trioxide/zirconium oxide
Voltage is all significantly improved than control cell, therefore the photoelectric conversion efficiency of battery significantly improves.
The present invention deposits one layer of Molybdenum Oxide Thin Films by Sol-Gel by electron beam evaporation on the surface of graphene, in Molybdenum Oxide Thin Films by Sol-Gel table
Face deposits one layer of zirconia film, and to prepare compound anti-reflection membrane structure, on the one hand compound antireflective film can effectively improve too
The open-circuit voltage in positive electricity pond, while by the preparation of compound antireflective film, the absorption efficiency to solar spectrum is effectively improved, improve electricity
The short circuit current density in pond, to effectively improve the photoelectric conversion efficiency of graphene schottky junction solar cell.Therefore, of the invention
A kind of compound antireflective film of the raising graphene schottky junction solar cell performance prepared, is a kind of raising graphene schottky junction
The effective ways of photoelectric conversion efficiency of the solar battery.
Embodiment 2
Graphene-GaAs schottky junction the solar cells comprising compound antireflective film of the present embodiment, from the bottom to top successively
Including hearth electrode gold, GaAs substrates, graphene layer, top electrode, molybdenum trioxide layer and zirconium oxide layer.
The preparation method of the graphene schottky junction solar cell comprising compound antireflective film, includes the following steps：
(1) preparation of back electrode：2 inches of GaAs substrates are fixed on disk, using electron beam evaporation system, in GaAs
Layer of Au electrode is deposited in the back side of substrate, and vapor deposition temperature is 50 DEG C, and evaporation time is 40 minutes, and Au thickness of electrode is 150 nanometers；
The GaAs substrates are N-type GaAs pieces, and doping concentration is 1 × 1017~4 × 1018cm-3；
(2) graphene is shifted：For graphene using chemical vapor deposition in copper foil Grown, the number of plies of graphene is 2
Layer, using FeCl3Solution transfers graphene to clear water and graphene is made to swim in clear water after eroding copper foil, utilize water
The Van der Waals force of molecule makes graphene be fitted tightly over the surface of GaAs substrates, naturally dry half an hour, (80 DEG C of heat drying
Baking 20 minutes), so that graphene is fitted closely with GaAs substrates；
(3) top electrode is prepared：Conductive silver glue is coated on graphene, the shape of conductive silver glue is strip, or
Round or dotted, the thickness of conductive silver glue is that the abundant curing conductive elargol of conductive silver glue about 10min is toasted at 1 micron, 60 DEG C；
(4) compound antireflective film is prepared：The substrate for having prepared top electrode is put into electron beam evaporation plating system, electron beam is utilized
Evaporation prepares the compound antireflective film of molybdenum trioxide/zirconium oxide：First not by top electrode covering graphene surface on or do not pushed up
Molybdenum trioxide layer is grown on the graphene surface and part top electrode of electrode covering；The growth temperature of molybdenum trioxide layer is 30 DEG C,
Growth time is 10 minutes, and the thickness of molybdenum trioxide is 8 nanometers；Then zirconium oxide is deposited on molybdenum trioxide layer, zirconium oxide
Growth temperature is 80 DEG C, and growth time is 25 minutes, and the thickness of zirconium oxide is 70 nanometers.
Embodiment 3
The structural schematic diagram of the graphene-GaAs schottky junction solar cells comprising compound antireflective film of the present embodiment,
Include hearth electrode gold, GaAs substrates, graphene layer, molybdenum trioxide layer, zirconium oxide layer and top electrode successively from the bottom to top.
The preparation method of the graphene schottky junction solar cell comprising compound antireflective film, includes the following steps：
(1) preparation of back electrode：2 inches of GaAs substrates are fixed on disk, using electron beam evaporation system, in GaAs
Layer of Au electrode is deposited in the back side of substrate, and vapor deposition temperature is 60 DEG C, and evaporation time is 20 minutes, and Au thickness of electrode is 80 nanometers；
The GaAs substrates are N-type GaAs pieces, and doping concentration is 1 × 1017~4 × 1018cm-3；
(2) graphene is shifted：For graphene using chemical vapor deposition in copper foil Grown, the number of plies of graphene is 6
Layer, using FeCl3Solution transfers graphene to ultra-pure water and graphene is made to swim in ultra-pure water after eroding copper foil, profit
With the Van der Waals force of hydrone, graphene is made to be fitted tightly over the surface of GaAs substrates, naturally dry half an hour, heat drying
(65 DEG C are toasted 20 minutes), makes graphene be fitted closely with GaAs substrates；
(3) top electrode is prepared：Conductive silver glue is coated on graphene, the shape of conductive silver glue is strip, size 1.5
× 0.8 square millimeter, the thickness of conductive silver glue is that about 10 minutes abundant curing conductives of conductive silver glue are toasted at 1.5 microns, 55 DEG C
Elargol；
(7) compound antireflective film is prepared：The substrate for having prepared top electrode is put into electron beam evaporation plating system, electron beam is utilized
Evaporation prepares the compound antireflective film of molybdenum trioxide/zirconium oxide：First not by top electrode covering graphene surface on and top electrode
Upper growth molybdenum trioxide layer；The growth temperature of molybdenum trioxide layer is 30 DEG C, and growth time is 10 minutes, and the thickness of molybdenum trioxide is
8 nanometers；Then zirconium oxide is deposited on molybdenum trioxide layer, the growth temperature of zirconium oxide is 80 DEG C, and growth time is 25 minutes, oxygen
The thickness for changing zirconium is 70 nanometers；Top electrode need to draw the surface of zirconium oxide simultaneously.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (9)
1. a kind of compound antireflective film improving graphene schottky junction solar cell performance, it is characterised in that：Including being sequentially overlapped
Molybdenum trioxide layer and zirconium oxide layer, molybdenum trioxide layer be set to above the graphene layer of graphene schottky junction solar cell.
2. a kind of graphene schottky junction solar cell comprising compound antireflective film, it is characterised in that：Including described in claim 1
Compound antireflective coating.
3. including the graphene schottky junction solar cell of compound antireflective film according to claim 2, it is characterised in that：Under
Supreme includes hearth electrode, GaAs substrates, graphene layer, top electrode, molybdenum trioxide layer, zirconium oxide layer successively.
4. including the graphene schottky junction solar cell of compound antireflective film according to claim 2, it is characterised in that：Top electricity
Graphene layer is not completely covered for pole, and molybdenum trioxide layer becomes compound antireflective film with zirconium oxide layer group, and top electrode has part not answered
It closes antireflective film covering or top electrode is brought out the surface of zirconium oxide layer.
5. including the graphene schottky junction solar cell of compound antireflective film according to claim 2, it is characterised in that：Three oxygen
The thickness for changing molybdenum layer is 2~20nm, and the thickness of zirconium oxide is 30~200nm；
The GaAs substrates are N-type GaAs pieces, and doping concentration is 1 × 1017~4 × 1018cm-3。
6. including the graphene schottky junction solar cell of compound antireflective film according to claim 2, it is characterised in that：It is described
Hearth electrode is gold electrode or silver electrode, and thickness of electrode is 20~300 nanometers；
The top electrode is conductive silver glue；
The number of plies of the graphene is 2~10 layers.
7. according to the preparation for the graphene schottky junction solar cell for described in any one of claim 2~6 including compound antireflective film
Method, it is characterised in that：Include the following steps：
(1) preparation of hearth electrode：Hearth electrode is deposited on a surface of GaAs substrates；
(2) preparation of graphene layer：The one side that hearth electrode is coated in GaAs substrates is known as lower surface, another side becomes upper table
Face；Graphene is transferred to the upper surface of GaAs substrates；
(3) preparation of top electrode：Top electrode is prepared on graphene layer；
(4) preparation of compound antireflective film：Using electron-beam vapor deposition method, not by the graphene layer of top electrode covering and top electrode
Upper growth molybdenum trioxide layer, then grows zirconium oxide layer on molybdenum trioxide layer, obtains compound anti-reflection film layer, and top electrode needs at this time
It is brought out compound anti-reflection film surface；Not by the graphene layer of top electrode covering or by the graphene layer of top electrode covering
With growth molybdenum trioxide layer on the top electrode of part, zirconium oxide layer then is grown on molybdenum trioxide layer, obtains compound anti-reflection film layer,
Top electrode is exposed at this time.
8. include the preparation method of the graphene schottky junction solar cell of compound antireflective film according to claim 7, it is special
Sign is：The condition that molybdenum trioxide layer is grown in step (4) be growth temperature is 20~60 DEG C, the thickness of molybdenum trioxide is 2~
20 nanometers；The growth temperature of zirconium oxide is 30~100 DEG C, and the thickness of zirconium oxide is 30~200 nanometers.
9. include the preparation method of the graphene schottky junction solar cell of compound antireflective film according to claim 7, it is special
Sign is：Vapor deposition temperature is 10~80 DEG C in step (1), and evaporation time is 10~60 minutes.
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