CN108807352A - 一种新型led灯丝制作技术 - Google Patents
一种新型led灯丝制作技术 Download PDFInfo
- Publication number
- CN108807352A CN108807352A CN201710333795.1A CN201710333795A CN108807352A CN 108807352 A CN108807352 A CN 108807352A CN 201710333795 A CN201710333795 A CN 201710333795A CN 108807352 A CN108807352 A CN 108807352A
- Authority
- CN
- China
- Prior art keywords
- substrate
- chip
- electrode
- hole
- tin cream
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 121
- 238000009413 insulation Methods 0.000 claims abstract description 35
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000006071 cream Substances 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000004568 cement Substances 0.000 claims abstract description 6
- 238000004070 electrodeposition Methods 0.000 claims abstract description 3
- 239000003292 glue Substances 0.000 claims description 33
- 229910052718 tin Inorganic materials 0.000 claims description 27
- 239000011135 tin Substances 0.000 claims description 27
- 239000004593 Epoxy Substances 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 7
- 229910002027 silica gel Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000005553 drilling Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 229920006335 epoxy glue Polymers 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000003698 laser cutting Methods 0.000 abstract description 4
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 244000247747 Coptis groenlandica Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Led Device Packages (AREA)
Abstract
本发明提供了一种新型LED灯丝制作技术，尤其是采用预处理特制基板结合漏印锡膏技术，将基板接触LED芯片面首先涂覆绝缘胶，然后将基板对应芯片的P/N电极位置采用激光打通孔，将芯片电极面朝向涂覆绝缘胶的基板面，将芯片电极对应通孔安放，利用基板上的通孔采用漏印方法将锡膏漏印到到芯片电极面，加热焊接芯片电极与基板导通，最后再通过化学腐蚀或激光切割将基板对应芯片P/N电极中间绝缘河道部分的金属腐蚀掉，芯片电极面与基板形成锡膏焊接通路，在产品性能提升的同时，生产效率大幅提高，生产成本大幅降低。
Description
技术领域
本发明涉及一种新型LED灯丝制作技术，特别涉及一种采用预处理特制基板结合漏印锡膏技术，将基板对应芯片的P/N电极位置采用激光打通孔，将芯片电极面朝向涂覆绝缘胶的基板面，将芯片电极对应通孔安放，使用常规正装芯片不需要打线，高效率低成本制作LED灯丝。
LED灯丝最近几年发展迅速，市场容量高速增长，目前LED灯丝主要制作技术主要分为两个大类，一类是采用LED正装芯片配合基板(玻璃、蓝宝石基板、陶瓷基板、金属基板)固晶、打线、模压封胶技术，一类是采用倒装LED芯片配合基板(PCB、FPC、印制电路的陶瓷基板、玻璃基板等)固晶、锡膏回流焊、模压封胶技术。
采用正装芯片制作的灯丝技术是目前LED灯丝行业的主流技术，由于LED固晶机、焊线机的价格比较昂贵，造成设备折旧成本较高，正装芯片采用LED芯片的蓝宝石面贴装结合基板，由于LED芯片的蓝宝石衬底的低导热系数，致使芯片散热性能较差。
倒装芯片制作LED灯丝，以PCB、FPC、印制电路的陶瓷基板、玻璃基板等为基板，在基板上印刷需要的连接线路和焊接装倒装LED芯片的焊接点，並进行蚀刻。在蚀刻好电路的基板上粘贴倒装LED芯片，过回流焊固化。模压封胶、涂覆荧光粉，然后加温固化。优点是可以节省打线机设备投资，同时由于LED芯片的 P/N电极面通过锡膏焊接与基板电路连接导通，芯片散热较好，缺点是倒装芯片价格高于正装芯片15％以上，另外对于10*30mil以下芯片由于芯片尺寸太小，在进行锡膏焊接时，容易造成芯片P/N电极间焊接短路。
发明内容总述
本发明提供了一种新型LED灯丝制作技术，尤其是采用预处理特制基板结合漏印锡膏技术，将基板接触LED芯片面首先涂覆绝缘胶，然后将基板采用激光对应芯片的P/N电极打通孔，将芯片电极面安装到对应位置后，利用基板上的通孔采用漏印方法将锡膏漏印到到芯片电极面，同时锡膏完全填充基板通孔，加热焊接芯片电极与基板导通，最后再通过化学腐蚀或激光切割将基板对应芯片P/N电极中间绝缘河道部分的金属腐蚀掉。包括以下步骤：
步骤一、基板预处理：将金属基板⑥(铜、铝、铁、锡、铅等导电金属或其他导电材料)等的一种作为灯丝封装的基板，基板厚度10--1000微米，将基板的一面涂覆1--1000微米厚的绝缘透明胶④(PTFE、环氧固晶胶、透明硅胶等)；
步骤二、激光打孔：将预处理后的基板使用激光打孔机，按照芯片电极(P极)①、芯片电极(N极) ⑤对应位置进行激光打孔⑦、⑧(贯穿孔)，孔径范围为微米，激光从基板涂覆绝缘透明胶④一面射入；
步骤三、芯片固晶：将芯片电极面对应基板涂覆绝缘透明胶④一面，按照芯片的两个电极①、⑤分别对位两个贯穿孔⑦、⑧，整个基板在相应位置安放好芯片，芯片摆放完毕后，将基板涂覆绝缘透明胶一面朝下平置于平整的工作台上并固定；
步骤四、锡膏漏印：在基板未涂覆绝缘透明胶一面用刮刀，将锡膏进行漏印，通过基板上的通孔⑦、⑧漏印到基板涂覆绝缘透明胶面的芯片对应电极①、⑤上；
步骤五、电极焊接：漏印完成后在基板未涂覆绝缘透明胶一面上覆盖电加热板，通电加热到230度正负5度，或者将漏印完成的基板放入电热箱中加热到230度正负5度；
步骤六、绝缘带制作：将电极焊接完成的基板两面涂覆一层基板腐蚀保护层(11)(1-1000微米的环氧固晶胶、PTFE胶、环氧或硅胶或者其他绝缘透明树脂)，干燥固化后，在基板未安放芯片一面沿着通孔⑦、⑧之间，对应芯片电极间绝缘河道②的中心位置，采用激光切割或机械刀切划开绝缘层，划道宽度为30-50 微米，将基板置入酸槽中，使用硫酸、硝酸或其他腐蚀溶液将划道的基板金属层腐蚀贯穿彻底形成片电极 (P极)①、芯片电极(N极)⑤绝缘断裂道(12)；
步骤七、清洗：将完成步骤六的部件进行清洗干燥；
步骤八：将完成步骤七的部件涂覆硅胶或环氧胶以及荧光胶，固胶、切割分离灯条。
本发明的有益效果：这种方法采用市场通用的正装芯片，节省了打线机设备投资，采用普通的金属基板降低材料成本，由于芯片与基板的结合面涂覆有透明胶，芯片P/N电极间形成物理阻隔，有效的杜绝了芯片P/N电极在锡膏焊接时的短路问题。芯片电极面与基板形成锡膏焊接通路，提高了芯片的导热散热性能，最后由于腐蚀掉了芯片的P/N电极中间的绝缘河道，芯片电极面没有不透光基板阻挡，使得芯片可以全周发光，在产品性能提升的同时，生产效率大幅提高，生产成本大幅降低。
图表说明
图1 本发明的结构示意图
图2 现有市场主流的灯丝结构示意图
图3 切割、分离后灯丝背视图
图4 切割、分离后灯丝俯视图
图5 基板腐蚀成型电路结构示意图
其中：1、芯片电极(P极) 2、芯片电极间绝缘河道 3、芯片蓝宝石衬底 4、透明绝缘胶 5、芯片电极(N 极) 6、基板 7、芯片电极(P极)通孔 8、芯片电极(N极)通孔 9、固晶胶10、金线 11、基板腐蚀保护层 12、基板绝缘断裂道
具体发明内容及实施方式
本发明提供了一种新型LED灯丝制作技术，尤其是采用预处理特制基板结合漏印锡膏技术，将基板接触LED芯片面首先涂覆绝缘胶，然后将基板采用激光对应芯片的P/N电极打通孔，将芯片电极面安装到对应位置后，利用基板上的通孔采用漏印方法将锡膏漏印到到芯片电极面，同时锡膏完全填充基板通孔，加热焊接芯片电极与基板导通，最后再通过化学腐蚀或激光切割将基板对应芯片P/N电极中间绝缘河道部分的金属腐蚀掉。这种方法采用市场通用的正装芯片，节省了固晶机、打线机设备投资，采用普通的金属基板降低材料成本，由于芯片与基板的结合面涂覆有透明胶，芯片P/N电极间形成物理阻隔，有效的杜绝了芯片P/N电极在锡膏焊接时的短路问题。由于芯片电极面与基板形成锡膏焊接通路，提高了芯片的导热散热性能，最后由于腐蚀掉了芯片的P/N电极中间的绝缘河道，芯片电极面没有不透光基板阻挡，使得芯片可以全周发光，在产品性能提升的同时，生产效率大幅提高，生产成本大幅降低。包括以下步骤：
以下附图和实施案例对本发明进行具体说明。
附图及具体实施方式或实施例都仅是示例性的，而非用于限制本发明。
实施例1：
选用LED芯片类型：正装蓝光芯片，芯片尺寸8*15mil，产品结构如图1所示.
步骤一、基板预处理：将金属基板⑥(铁板，基板厚度100-150微米)等的一种作为灯丝封装的基板，基板厚度200±50微米，将基板的一面涂覆50--100微米厚的绝缘透明胶④(环氧固晶胶)；
步骤二、激光打孔：将预处理后的基板使用激光打孔机，按照芯片电极(P极)①、芯片电极(N极) ⑤对应位置进行激光打孔⑦、⑧(贯穿孔)，孔径范围为微米，激光从基板涂覆绝缘透明胶④一面射入，步骤二完成部件如图3所示；
步骤三、芯片固晶：将芯片电极面对应基板涂覆绝缘透明胶④一面，按照芯片的两个电极①、⑤分别对位两个贯穿孔⑦、⑧，整个基板在相应位置安放好芯片，芯片摆放完毕后，将基板涂覆绝缘透明胶一面朝下平置于平整的工作台上并固定；
步骤四、锡膏漏印：在基板未涂覆绝缘透明胶一面用刮刀，将锡膏进行漏印，通过基板上的通孔⑦、⑧漏印到基板涂覆绝缘透明胶面的芯片对应电极①、⑤上；
步骤五、电极焊接：漏印完成后在基板未涂覆绝缘透明胶一面上覆盖电加热板，通电加热到230度正负5度，保温3分钟(或者将漏印完成的基板放入电热箱中加热到230度正负5度)，然后自然降温到室温；
步骤六、绝缘带制作：将电极焊接完成的基板两面涂覆一层基板腐蚀保护层(11)(100±50微米的环氧固晶胶)，干燥固化后，如图5所示在基板未安放芯片一面沿着通孔⑦、⑧之间，对应芯片电极间绝缘河道②的中心位置，采用激光切割或机械刀切划开绝缘层(将基板金属裸露)，划道宽度为50±20微米，将基板置入酸槽中，使用硫酸、硝酸或其他腐蚀溶液将划道的基板金属层腐蚀贯穿彻底形成片电极(P极)①、芯片电极(N极)⑤绝缘断裂道(12)；
步骤七、清洗：将完成步骤六的部件进行清洗干燥，步骤七完成部件如图4所示；
步骤八：将完成步骤七的部件涂覆硅胶或环氧胶以及荧光胶，固胶、切割分离灯条。
Claims (7)
1.一种新型LED灯丝制作技术，尤其是采用预处理预处理基板结合漏印锡膏技术，将基板对应芯片的P/N电极位置采用激光打通孔，将芯片电极面朝向涂覆绝缘胶的基板面，对应通孔位置安放，包括以下步骤：
步骤一、基板预处理：将金属基板⑥(铜、铝、铁、锡、铅等导电金属或其他导电材料)等的一种作为灯丝封装的基板，基板厚度10--1000微米，将基板的一面涂覆1--1000微米厚的绝缘透明胶④(PTFE、环氧固晶胶、透明硅胶等)；
步骤二、激光打孔：将预处理后的基板使用激光打孔机，按照芯片电极(P极)①、芯片电极(N极)⑤对应位置进行激光打孔⑦、⑧(贯穿孔)，孔径范围为微米，激光从基板涂覆绝缘透明胶④一面射入；
步骤三、芯片固晶：将芯片电极面对应基板涂覆绝缘透明胶④一面，按照芯片的两个电极①、⑤分别对位两个贯穿孔⑦、⑧，整个基板在相应位置安放好芯片，芯片摆放完毕后，将基板涂覆绝缘透明胶一面朝下平置于平整的工作台上并固定；
步骤四、锡膏漏印：在基板未涂覆绝缘透明胶一面用刮刀，将锡膏进行漏印，通过基板上的通孔⑦、⑧漏印到基板涂覆绝缘透明胶面的芯片对应电极①、⑤上；
步骤五、电极焊接：漏印完成后在基板未涂覆绝缘透明胶一面上覆盖电加热板，通电加热到230度正负5度，或者将漏印完成的基板放入电热箱中加热到230度正负5度；
步骤六、绝缘带制作：将电极焊接完成的基板两面涂覆一层基板腐蚀保护层(11)(1-1000微米的环氧固晶胶、PTFE胶、环氧或硅胶或者其他绝缘透明树脂)，干燥固化后，在基板未安放芯片一面沿着通孔⑦、⑧之间，对应芯片电极间绝缘河道②的中心位置，采用激光切割或机械刀切划开绝缘层，划道宽度为30-50微米，将基板置入酸槽中，使用硫酸、硝酸或其他腐蚀溶液将划道的基板金属层腐蚀贯穿彻底形成片电极(P极)①、芯片电极(N极)⑤绝缘断裂道(12)；
步骤七、清洗：将完成步骤六的部件进行清洗干燥；
步骤八：将完成步骤七的部件涂覆硅胶或环氧胶以及荧光胶，固胶、切割分离灯条。
2.根据权利要求1所述的新型LED灯丝制作技术，其特征在于，选用10-1000微米金属基板⑥并采用两面或单面涂绝缘胶⑧，涂胶厚度为1-1000微米。
3.根据权利要求1所述的新型LED灯丝制作技术，其特征在于，将预处理后的基板使用激光打孔机，按照芯片电极(P极)①、芯片电极(N极)⑤对应位置进行激光打孔⑦、⑧(贯穿孔)，孔径范围为微米，激光从基板涂覆绝缘透明胶④一面射入，贯穿孔用来将芯片电极漏印锡膏并形成芯片电极与基板的导电连接。
4.根据权利要求1所述的新型LED灯丝制作技术，其特征在于，芯片电极(P极)①、芯片电极(N极)⑤对应基板基板涂覆绝缘透明胶④一面固晶安放，芯片的两个电极①、⑤分别对位两个贯穿孔⑦、⑧，整个基板在相应位置摆放好芯片，芯片摆放完毕后，芯片电极中心对应基板贯通孔的中心点。
5.根据权利要求1所述的新型LED灯丝制作技术，其特征在于，采用细粒径锡膏，使用漏印技术，将锡膏通过基板通孔漏印到芯片电极①、⑤上，锡膏填满基板通孔⑦、⑧。
6.根据权利要求1所述的新型LED灯丝制作技术，其特征在于采用电热板或电热箱进行电极焊接。
7.根据权利要求1所述的新型LED灯丝制作技术，其特征在于采用硫酸、硝酸或其他化学腐蚀液将基板进行腐蚀以形成相应的电路。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710333795.1A CN108807352B (zh) | 2017-05-03 | 2017-05-03 | 一种新型led灯丝制作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710333795.1A CN108807352B (zh) | 2017-05-03 | 2017-05-03 | 一种新型led灯丝制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108807352A true CN108807352A (zh) | 2018-11-13 |
| CN108807352B CN108807352B (zh) | 2020-07-14 |
Family
ID=64094485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710333795.1A Active CN108807352B (zh) | 2017-05-03 | 2017-05-03 | 一种新型led灯丝制作方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108807352B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817769A (zh) * | 2019-01-15 | 2019-05-28 | 申广 | 一种新型led芯片封装制作方法 |
| CN109817796A (zh) * | 2019-01-24 | 2019-05-28 | 南通沃特光电科技有限公司 | 一种具有双层荧光层的led封装结构及其封装方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222667A (zh) * | 2011-07-14 | 2011-10-19 | 东莞市邦臣光电有限公司 | 一种led光源模块及其封装工艺 |
| CN103828076A (zh) * | 2011-08-01 | 2014-05-28 | 株式会社Ｓｔｅｑ | 半导体装置及其制造方法 |
| CN204011418U (zh) * | 2014-07-25 | 2014-12-10 | 胡溢文 | 一种设有正装倒置芯片的led灯丝 |
| CN104900535A (zh) * | 2015-04-07 | 2015-09-09 | 北京理工大学 | 太赫兹芯片倒桩焊背景下陶瓷薄膜导电过孔的焊料填充工艺 |
| US20160300821A1 (en) * | 2015-02-25 | 2016-10-13 | Lextar Electronics Corporation | Light-emitting diode chip package |
-
2017
- 2017-05-03 CN CN201710333795.1A patent/CN108807352B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102222667A (zh) * | 2011-07-14 | 2011-10-19 | 东莞市邦臣光电有限公司 | 一种led光源模块及其封装工艺 |
| CN103828076A (zh) * | 2011-08-01 | 2014-05-28 | 株式会社Ｓｔｅｑ | 半导体装置及其制造方法 |
| CN204011418U (zh) * | 2014-07-25 | 2014-12-10 | 胡溢文 | 一种设有正装倒置芯片的led灯丝 |
| US20160300821A1 (en) * | 2015-02-25 | 2016-10-13 | Lextar Electronics Corporation | Light-emitting diode chip package |
| CN104900535A (zh) * | 2015-04-07 | 2015-09-09 | 北京理工大学 | 太赫兹芯片倒桩焊背景下陶瓷薄膜导电过孔的焊料填充工艺 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817769A (zh) * | 2019-01-15 | 2019-05-28 | 申广 | 一种新型led芯片封装制作方法 |
| CN109817796A (zh) * | 2019-01-24 | 2019-05-28 | 南通沃特光电科技有限公司 | 一种具有双层荧光层的led封装结构及其封装方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108807352B (zh) | 2020-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105185752B (zh) | 半导体器件及其制造方法 | |
| CN114068734A (zh) | 一种光伏电池组件的制造方法 | |
| CN100492632C (zh) | 电路装置及其制造方法 | |
| US20140230878A1 (en) | Method for electrically connecting several solar cells and photovoltaic module | |
| CN203367260U (zh) | 一种功率陶瓷外壳和功率芯片封装结构 | |
| CN107275463A (zh) | 一种新型led封装制作技术 | |
| KR20170126469A (ko) | 칩 배열 및 접촉 연결을 형성하는 방법 | |
| CN108807352A (zh) | 一种新型led灯丝制作技术 | |
| CN110473853A (zh) | 一种dfn器件的封装结构、无引线框架载体及dfn器件的封装方法 | |
| CN207781646U (zh) | 一种led芯片倒装焊接结构和led灯珠 | |
| TWI697058B (zh) | 具堅實導電及導熱性銅質線路之電路元件封裝方法及其封裝體 | |
| CN103314453B (zh) | 太阳能电池模块及太阳能电池模块的制造方法 | |
| CN111403296B (zh) | 一种半导体封装件及其制作方法 | |
| CN111933784A (zh) | 一种激光芯片的陶瓷封装方法及陶瓷封装芯片结构 | |
| CN103151430B (zh) | 纳米金属粒实现led的低温金属界面连接的制备方法 | |
| CN106340581A (zh) | 一种csp灯珠封装的方法 | |
| CN211656532U (zh) | 一种d2pak封装mos管的pcb贴片结构 | |
| CN105355567B (zh) | 双面蚀刻水滴凸点式封装结构及其工艺方法 | |
| CN105206594B (zh) | 单面蚀刻水滴凸点式封装结构及其工艺方法 | |
| CN209496814U (zh) | 一种封装载板、封装体 | |
| CN209544338U (zh) | 一种封装载板及封装体 | |
| CN206370416U (zh) | 一种二极管封装结构 | |
| CN105428514A (zh) | 一种集成led光源导热结构及其实现方法 | |
| CN206877993U (zh) | 一种led基于正面焊盘可共晶的封装结构 | |
| CN206789535U (zh) | 一种电力电子器件的扇出型封装结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220829 Address after: 1104-E21, 11th Floor, Life Insurance Building, No. 1001, Fuzhong 1st Road, Fuzhong Community, Lianhua Street, Futian District, Shenzhen, Guangdong 518000 Patentee after: Shenzhen Rewo Micro Semiconductor Technology Co.,Ltd. Address before: Building 3, Penghui Plaza, No. 48, Heishijiao Street, Shahekou District, Dalian City, Liaoning Province 116023 Patentee before: Shen Guang |