CN108732490B - Full-automatic unmanned aging test and life test system for microwave solid-state power amplifier - Google Patents
Full-automatic unmanned aging test and life test system for microwave solid-state power amplifier Download PDFInfo
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- CN108732490B CN108732490B CN201811013100.2A CN201811013100A CN108732490B CN 108732490 B CN108732490 B CN 108732490B CN 201811013100 A CN201811013100 A CN 201811013100A CN 108732490 B CN108732490 B CN 108732490B
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- 238000012360 testing method Methods 0.000 title claims abstract description 135
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Abstract
The invention provides a full-automatic unmanned aging test and life test system of a microwave solid-state power amplifier, which relates to the field of aging test and life test systems, and comprises an aging test and life test control box and a computer; the aging test and life test control box comprises a control box shell, a power supply main board, a microprocessor main board, a frequency source, a radio frequency amplifier and a switch matrix, wherein the power supply main board, the microprocessor main board, the frequency source, the radio frequency amplifier and the switch matrix are arranged in the shell; the control box shell comprises a control box panel and a control box backboard; the control box panel is connected with the power supply main board, the power supply main board is also connected with the frequency source, the control box back board and the microprocessor main board, the microprocessor main board is also connected with the control box panel, the control box back board, the frequency source, the radio frequency amplifier and the switch matrix, and the frequency source is also connected with the radio frequency amplifier and the switch matrix. The invention solves the problems that the aging experiment and the life test of the traditional microwave solid-state power amplifier need to consume a great deal of cost and manpower and have low test efficiency.
Description
Technical Field
The invention relates to the field of aging tests and life test systems, in particular to a full-automatic unmanned aging test and life test system of a microwave solid-state power amplifier.
Background
With the rapid development of technology and the complicating of international situation, the demand of microwave solid-state power amplifiers is greatly increased, and the aging test and the life test of the solid-state power amplifiers in the production process are important links in the manufacturing field of the microwave industry. Whether the tested object achieves the initial design target or not is judged through the aging test and the life test, so that whether the performance of the whole machine meets the design task requirement or not is judged. Solid state power amplifier burn-in screening is an important means of improving product quality. Solid state power amplifier burn-in and life tests are also becoming increasingly important to various companies and research institutions.
The microwave solid-state power amplifier is not only a precise electronic device, but also has high manufacturing cost. The test wiring is complex, the requirement on the power-on time sequence is strict, the performance index test items are numerous, the environmental test time is long, and once the test is performed in the operation process, the product is directly scrapped due to errors. The whole testing aging test link of the solid-state power amplifier is a labor-intensive production mode, and is long in time consumption, and the production efficiency is restricted due to the influence of factors such as the rise of labor cost and the shortage of skilled technical workers on enterprise production.
At present, domestic equipment manufacturers mainly adopt manual work to conduct single-unit aging screening one by one, connect cables one by one, install, detach and manually record test data for each solid-state power amplifier, and recorded contents comprise test data, time, environmental conditions, product numbers and the like. The solid-state power amplifier has different shapes and sizes, different product connection cables are defined, the number of screws is large, and the operation time is increased; meanwhile, the single items of the aging test and the life test of the solid-state power amplifier are tens of hours, and the testing efficiency is seriously affected by aging one by one and manually tracking and recording data at any time.
In addition, traditional frock can only alone test one, needs manual operation moreover, when production task is urgent, uses this kind of mode to test, just needs more test equipment, test platform and tester, can lead to the enterprise to throw into more cost. Therefore, a convenient, efficient and unattended aging test and life test system is needed, which not only can meet the requirements of mass production and low cost investment, but also can ensure safe, reliable and quick test of products.
Disclosure of Invention
The invention aims at: the invention provides a full-automatic unmanned aging test and life test system of a microwave solid-state power amplifier, which aims to solve the problems that the aging test and life test of the existing microwave solid-state power amplifier are high in cost and labor consumption and low in test efficiency.
The technical scheme of the invention is as follows:
a full-automatic unmanned aging test and life test system of a microwave solid-state power amplifier comprises an aging test and life test control box and a computer;
the computer is connected with a burn-in test and life test control box which is connected with a microwave solid-state power amplifier;
the aging test and life test control box comprises a control box shell, a power supply main board, a microprocessor main board, a frequency source, a radio frequency amplifier and a switch matrix, wherein the power supply main board, the microprocessor main board, the frequency source, the radio frequency amplifier and the switch matrix are arranged in the shell; the control box shell comprises a control box panel and a control box backboard;
the control box panel is connected with the power supply main board, the power supply main board is also connected with the frequency source, the control box back plate and the microprocessor main board, the microprocessor main board is also connected with the control box panel, the control box back plate, the frequency source, the radio frequency amplifier and the switch matrix, and the frequency source is also connected with the radio frequency amplifier and the switch matrix;
the power supply main board and the radio frequency amplifier and the switch matrix are respectively connected with the microwave solid-state power amplifier.
Specifically, the control box panel is provided with a +57V ammeter, -28.5V ammeter, a normal indicator light of a tested power amplifier, a fault indicator light of the tested power amplifier, an alternating current switch and a hardware reset tact switch; the control box backboard is provided with a-28.5V power supply and signal socket, a +57V power supply output socket, a +57V power supply input socket, a serial port communication interface, an AC220V power supply socket, a program downloading port, a radio frequency amplification and switch matrix output interface and a shell grounding column.
Further, the system also comprises a temperature sensor, and the temperature sensor is connected with the aging test and life test control box.
Specifically, the control box backplate is equipped with temperature sensor socket, temperature sensor pass through temperature sensor socket with microprocessor connection, temperature sensor is used for sampling the ambient temperature that microwave solid-state power amplifier is located.
Specifically, the power supply motherboard includes:
the AC/DC conversion power supply module is used for converting commercial power into a direct-current stabilized power supply;
the isolation DC/DC power supply module is used for converting a direct-current stabilized power supply into a required-28.5V and +57V power supply;
and the +/-12V power supply module is used for supplying power to the micro-processing main board, the frequency source, the radio frequency amplifier and the switch matrix.
Specifically, the radio frequency amplifier and the switch matrix comprise a radio frequency switch matrix circuit and a radio frequency switch matrix control circuit; the radio frequency switch matrix circuit includes: the attenuator is connected with the frequency source, and control signals of the switch chip are provided by the microprocessor main board;
the radio frequency switch matrix control circuit comprises: an adjustable linear voltage-stabilizing integrated circuit, a modulator, a linear adjustable voltage stabilizer and a switch chip driving integrated circuit;
the adjustable linear voltage stabilizing integrated circuit is used for supplying a stable power supply to the modulator, the modulator is used for realizing drain electrode modulation on the amplifier chip, the modulator is connected with the microprocessor main board, the linear adjustable voltage stabilizer is used for supplying a voltage stabilizing power supply to the switch chip driving integrated circuit, and the switch chip driving integrated circuit is connected with the switch chip.
Specifically, the microprocessor motherboard includes:
singlechip S chip TM32F103ZE chip T6;
the single chip microcomputer peripheral circuit comprises a socket J1B and a socket J2B, wherein the socket J1B is used for connecting the power supply main board and the microprocessor main board, and the socket J2B is used for connecting the radio frequency switch matrix control circuit and the microprocessor main board;
the power supply voltage stabilizing circuit comprises a main board power supply voltage stabilizing part and a current sampling integrated circuit voltage stabilizing part;
the singlechip driving circuit comprises a plurality of driving chips, and the driving chips are connected and communicated with a computer;
the AD sampling and indicator lamp circuit is connected with the singlechip and comprises a sampling AD chip for adopting-28V and 57V currents, a reference voltage stabilizing chip for stabilizing the voltage of the sampling AD chip and an indicator lamp for carrying out normal indication or fault test on the microwave solid-state power amplifier;
the 8-path 57V power supply switch control and current sampling circuit comprises an 8-path 57V switching tube, an isolation optocoupler for isolating the 8-path 57V switching tube from a reference ground, a feedback isolation optocoupler for detecting the on-off of the 57V switching tube and a Hall current sensor for adopting the current of the 8-path 57V switching tube;
the 8-28V power supply switch control and current sampling circuit comprises an 8-28V switching tube, an isolation optocoupler for isolating the 8-28V switching tube from a reference ground, a feedback isolation optocoupler for detecting the on-off of the-28V switching tube and a Hall current sensor for adopting the current of the 8-28V switching tube.
After the scheme is adopted, the beneficial effects of the invention are as follows:
(1) After the inherent connecting wires among the components are connected, only the tested object is required to be connected independently, at most 8 test stations can be connected simultaneously, at least 1 test station can be selected flexibly.
(2) After the parameters are set through the computer interface, the invention can automatically finish electric aging and automatically record data after clicking, and the personnel is not required to watch and other instruments are not required.
(3) The invention directly generates and stores the test report without manual record of various test data and product information, and can be checked at any time.
(4) When the invention is used on a flow line test line, the test speed can be greatly improved, and the requirement of automatic flow line operation can be completely met.
(5) The aging test and life control box and the temperature sensor can be produced in batches.
(6) The invention does not need personnel on duty, and the test is performed without manual operation until the test is completed. The technical requirements on workers are low, no professional testers are needed, and the test can be performed through simple training.
(7) The invention is suitable for automatic test line operation in the microwave radio frequency industry.
Drawings
FIG. 1 is a block diagram of a burn-in test and life test system of the present invention;
FIG. 2 is a block diagram of a burn-in test and life control box of the present invention;
FIG. 3 is a panel diagram of a burn-in test and life control box of the present invention;
FIG. 4 is a view of a burn-in test and life control box back plate of the present invention;
FIG. 5 is a circuit block diagram of a temperature sensor of the present invention;
FIG. 6 is a schematic diagram of a power motherboard circuit according to the present invention;
FIG. 7 is a schematic diagram of a radio frequency switch matrix circuit of the present invention;
FIG. 8 is a schematic diagram of a radio frequency switch matrix control circuit in accordance with the present invention;
FIG. 9 is a schematic diagram of a peripheral circuit and a power supply voltage stabilizing circuit of the singlechip of the invention;
FIG. 10 is a schematic diagram of a single chip microcomputer driving, AD sampling and indicator lamp circuit of the present invention;
FIG. 11 is a schematic diagram of an 8-way 57V power switch control and current sampling circuit of the present invention;
fig. 12 is a schematic diagram of an 8-way-28V power switch control and current sampling circuit of the present invention.
Detailed Description
The invention will be further illustrated with reference to the following figures and examples, which include but are not limited to the following examples.
The invention provides a full-automatic unmanned aging test and life test system of a microwave solid-state power amplifier, which can be used for quickly connecting the whole solid-state power amplifier with the same design index and electrically aging the whole solid-state power amplifier.
The technical scheme of the invention is as follows:
a full-automatic unmanned aging test and life test system of a microwave solid-state power amplifier comprises an aging test and life test control box and a computer; the computer is connected with a burn-in test and life test control box which is connected with a microwave solid-state power amplifier; the aging test and life test control box comprises a control box shell, a power supply main board, a microprocessor main board, a frequency source, a radio frequency amplifier and a switch matrix, wherein the power supply main board, the microprocessor main board, the frequency source, the radio frequency amplifier and the switch matrix are arranged in the shell; the control box shell comprises a control box panel and a control box backboard; the control box panel is connected with the power supply main board, the power supply main board is also connected with the frequency source, the control box back plate and the microprocessor main board, the microprocessor main board is also connected with the control box panel, the control box back plate, the frequency source, the radio frequency amplifier and the switch matrix, and the frequency source is also connected with the radio frequency amplifier and the switch matrix; the power supply main board and the radio frequency amplifier and the switch matrix are respectively connected with the microwave solid-state power amplifier.
The invention provides a rapid full-automatic unmanned aging test and life test system, which is used for electric aging of a microwave solid-state power amplifier. The connection relationship between the whole aging test and the life test system is shown in fig. 1. The test content and the steps are set through a human-computer interaction interface of a computer. Firstly, a computer gives a command to a burn-in test and life test control box during electric burn-in, and the burn-in test and life test control box is controlled to sequentially open-28.5V and +57V power supplies for a tested piece; the aging test and life test control box also sequentially outputs radio frequency excitation signals to the tested piece, and the tested piece starts to operate at the moment.
In a specific implementation, all the aging parameters are automatically recorded and stored in a folder appointed by a computer, and the data record records test data in a data table with a specified format and is printed by a printer.
Specifically, the structure of the control box of the burn-in test and life control box is shown in fig. 2, and further, the control box panel of the burn-in test and life control box is shown in fig. 3, mainly comprising: a1 A +57V ammeter; a2, -28.5V ammeter; a3, a normal indicator lamp of the tested power amplifier 1-8; a4, a tested power amplifier 1-8 fault indicator lamps; a5, alternating current AC220V ship-shaped mechanical switch; a6, resetting the tact switch by hardware. As shown in fig. 3, the mechanical switch on the panel turns off and turns on the power supply of the power supply main board, and the reset tact switch on the panel resets the control box by software.
The housing back plate of the burn-in test and life control box is shown in fig. 4 and mainly comprises: b1, 8-28.5V power and signal socket (-28.5V and normal indication of power-on); b2,8 paths of +57V power supply output sockets (+57V output interfaces); b3, a temperature sensor socket (a temperature sensor sampling interface); b4 A +57V power input socket; b5, serial communication interface; b6, AC220V power socket; b7, a program downloading port; b8,8 paths of excitation signal output (radio frequency amplification and switch matrix output interface); b9, a shell grounding column. Specifically, -28.5V current is small, the common power supply module can adapt to the fact that +57V power supply current is large, and an external laboratory power supply is used when the requirement of a tested piece is not met, so that a +57V power supply input socket is arranged. The 28.5V power supply and signal socket also contains the control signal of the tested piece.
The power main board circuit structure of the burn-in test and life control box is shown in fig. 2. In fig. 2, power is input through a through-backboard AC220V socket, AC220V power input is controlled through a ship-shaped switch on a panel, and then the input mains voltage 220V is converted into +12v, -12v, -28.5v and +57V power supply voltages through an AC/DC conversion power supply module on a power supply main board to supply power to a microprocessor main board, a radio frequency amplification and switch matrix and a frequency source. The power supply main board also plays a role in overcurrent and overvoltage protection on +57V main power supply input, and 8 paths of +57V current sampling and 8 paths of +57V power supply switch control are realized at the same time.
The microprocessor main board of the aging test and life test control box mainly comprises a program downloading port, a main control MCU, a pulse FPGA, an R232 communication interface, a panel indicator lamp, a 12-bit multichannel AD sampling circuit (+ 57V and-28.5V current sampling), an 8-way +57V power switch control circuit and an 8-way-28V switch control circuit.
The frequency sources in the burn-in test and life test control boxes are important components in the overall design. The frequency source is an external protocol device, and mainly provides input radio frequency signals for the radio frequency amplifier and the switch matrix. The rf amplifier and switch matrix in the burn-in test and life control box amplifies the output signal of the rf source and controls the output through the switch matrix, such as interface b8 (stimulus signal SMA) in fig. 4.
Further, still be equipped with temperature sensor in this ageing test and the life-span test system, temperature sensor is in order to detect the real-time ambient temperature of measured piece, purpose: firstly, the over-temperature protection of the tested product is designed; secondly, test data are recorded corresponding to the temperatures of the product in low-temperature, normal-temperature and high-temperature tests respectively. The temperature sensor circuit structure is shown in fig. 5. In the figure, the linear voltage stabilizer stabilizes the input +12V power supply to +5V power supply required by the temperature sensor. The voltage signal collected by the temperature sensor is connected to the microprocessor main board in the aging test and service life control box for data processing, and the collected signal is connected to the microprocessor main board through an interface b3 in fig. 4.
Next, the internal circuits of the burn-in test and the lifetime control box will be described in detail.
The aging test and life test control box comprises a control box shell, a power supply main board, a microprocessor main board, a frequency source, a radio frequency amplifier and a switch matrix, wherein the power supply main board, the microprocessor main board, the frequency source, the radio frequency amplifier and the switch matrix are arranged in the shell; the control box shell comprises a control box panel and a control box backboard.
The power supply main board comprises:
the AC/DC conversion power supply module is used for converting commercial power into a direct-current stabilized power supply;
the isolation DC/DC power supply module is used for converting a direct-current stabilized power supply into a required-28.5V and +57V power supply;
and the +/-12V power supply module is used for supplying power to the micro-processing main board, the frequency source, the radio frequency amplifier and the switch matrix.
A schematic diagram of a specific power motherboard circuit is shown in fig. 6. In fig. 6, power is input through a through-backboard AC220V socket, and power input of the chip T1, the chip T2, the chip T6 and the chip T7 is controlled through a ship-shaped switch on the panel, and the chip T1 is a high-efficiency and low-ripple AC/DC conversion power module, which converts the input mains voltage 220V into a direct current 360V regulated power to supply power to the chip T3, the chip T4 and the chip T5 respectively. The chip T3, the chip T4 and the chip T5 belong to an isolated DC/DC power supply module, wherein the chip T3 converts 360V input into-28.5V for the whole negative pressure power supply of a tested piece, the resistor R7, the resistor R9 and the resistor R10 are adjusting resistors of the output voltage of the chip T3, the diode D2 is a power output indicator lamp, when the chip T3 is powered, the chip T3 is lighted, and other capacitors are filter capacitors; the chip T4 and the chip T5 are respectively connected with each other in series to form a +57V power supply, the +57V power supply is a main power supply of a tested piece, the diode D6 is a +57V power supply indicator lamp, the diode D5 and the diode D7 are voltage anti-reflection diodes of the chip T4 and the chip T5 enabling control ends, and when the anti-reflection diodes are conducted, the chip T4 and the chip T5 have no output voltage; the chip T2 power module outputs +/-12V and mainly supplies power to the micro-processing main board, the frequency source DRO and the switch matrix control circuit; the chip T6 and the chip T7 are respectively +57V and-28.5V ammeter power supply modules, the capacitor C75, the capacitor C76, the capacitor C79 and the capacitor C80 are high-frequency filter capacitors, and the capacitor C77, the capacitor C78, the capacitor C81 and the capacitor C82 are low-frequency filter capacitors.
The radio frequency amplifier and the switch matrix comprise a radio frequency switch matrix circuit and a radio frequency switch matrix control circuit; the radio frequency switch matrix circuit includes: the power divider comprises an attenuator, an amplifier chip, a power dividing bridge and a switch chip, wherein the attenuator is connected with the frequency source, and control signals of the switch chip are provided by the microprocessor main board. The principle of the radio frequency switch matrix circuit is shown in fig. 7, and the radio frequency switch matrix circuit amplifies the output signal of the radio frequency source 1 and outputs the amplified output signal to the backboard through 8 paths of switch matrix control to serve as a radio frequency signal source for aging of a tested piece. The output is shown in FIG. 4, which shows the excitation Signal (SMA) in the aging test and life control box back panel diagrams. The test device is connected to the tested piece through a radio frequency cable during test. The radio frequency channel principle is that a 17dBm signal input by a frequency source 1 is attenuated by 5dB through an attenuator 2 (NC 1338C-120), amplified through an amplifier chip 3 (NC 11201C-1418), then divided into two paths of signals with equal power through a power dividing bridge 4, the two paths of signals after the same power dividing are respectively divided into two paths of signals with equal power through the power dividing bridge 4, and the like, 1-8 paths of radio frequency signals are realized, 8 paths of radio frequency signals are obtained, and each power dividing bridge 4 is connected in parallel with a 50 ohm matching resistor 5. In FIG. 7, the above 4 paths of signals are controlled and selectively output through 1 single-pole double-throw switch chip 6 (NC 1670C-16), and the other path is the same, and the two paths of switches together form a radio frequency switch matrix circuit. The control signal of the switch matrix is provided by the microprocessor main board and is connected by the control line J30-15 chip TJ. Specifically, the single pole double throw switch chip 6 is model NC1670C-16, and in practice, the NC1670C-16 chip is provided with a Vt1 pin and a Vt2 pin, and the Vt1 pin and the Vt2 pin are connected with a radio frequency switch matrix control circuit.
The radio frequency switch matrix control circuit comprises: an adjustable linear voltage-stabilizing integrated circuit, a modulator, a linear adjustable voltage stabilizer and a switch chip driving integrated circuit; the design principle of low frequency control is shown in fig. 8, wherein the chip IC1A is an adjustable linear voltage stabilizing integrated circuit MIC39102BM, and is provided for a modulator formed by the chip IC5A and the chip IC6A, so as to finally realize drain modulation of the amplifier chip, wherein the chip IC5A is a MIC4451YM driver, which directly drives the field effect switching tube FDS4935A of the chip IC6A, the input chip T chip TL2 of the chip IC5A is also connected to the microprocessor motherboard by the control line J30-15 chip TJ, and the amplifier chip works when the control signal chip T chip TL2 is at a high level, and does not work when the control signal chip T chip TL2 is at a low level. The chip IC2A and the chip IC3A are linear adjustable voltage regulators, which provide +/-5V for the IC4A and the IC7A, the chip IC4A and the chip IC7A are driving integrated circuit MAD resistors R-009190-0001 of a single-pole double-throw switch chip MA4SW410B-1, a switch control circuit is formed, control signals of a capacitor C1-a capacitor C8 are connected to a microprocessor mainboard through a control line J30-15TJ to realize radio frequency switch matrix control, and specifically, the chip IC4A and the chip IC7A are connected with Vt1 pins and Vt2 pins of the single-pole double-throw switch chip.
The adjustable linear voltage stabilizing integrated circuit is used for supplying a stable power supply to the modulator, the modulator is used for realizing drain electrode modulation on the amplifier chip, the modulator is connected with the microprocessor main board, the linear adjustable voltage stabilizer is used for supplying a voltage stabilizing power supply to the switch chip driving integrated circuit, and the switch chip driving integrated circuit is connected with the switch chip.
Specifically, the microprocessor motherboard includes:
SCM S chip TM32F103ZET6;
the single chip microcomputer peripheral circuit comprises a socket J1B and a socket J2B, wherein the socket J1B is used for connecting the power supply main board and the microprocessor main board, and the socket J2B is used for connecting the radio frequency switch matrix control circuit and the microprocessor main board;
the power supply voltage stabilizing circuit comprises a main board power supply voltage stabilizing part and a current sampling integrated circuit voltage stabilizing part;
the singlechip driving circuit comprises a plurality of driving chips, and the driving chips are connected and communicated with a computer;
the AD sampling and indicator lamp circuit is connected with the singlechip and comprises a sampling AD chip for adopting-28V and 57V currents, a reference voltage stabilizing chip for stabilizing the voltage of the sampling AD chip and an indicator lamp for carrying out normal indication or fault test on the microwave solid-state power amplifier;
the 8-path 57V power supply switch control and current sampling circuit comprises an 8-path 57V switching tube, an isolation optocoupler for isolating the 8-path 57V switching tube from a reference ground, a feedback isolation optocoupler for detecting the on-off of the 57V switching tube and a Hall current sensor for adopting the current of the 8-path 57V switching tube;
the 8-28V power supply switch control and current sampling circuit comprises an 8-28V switching tube, an isolation optocoupler for isolating the 8-28V switching tube from a reference ground, a feedback isolation optocoupler for detecting the on-off of the-28V switching tube and a Hall current sensor for adopting the current of the 8-28V switching tube.
In fig. 9, a chip U1B is a core control device S TM32F103ZE T6 of the whole logo processor motherboard, and its main working principle is that it can be implemented by over-programming and communicate with a computer, so as to implement logic control of each function. In the figure, the chip U2B, the chip U3B and the chip IC1B form an integrated linear voltage stabilizing circuit, where the chip U2B and the chip IC1B stabilize the power input from the power motherboard into the power voltage required by the microprocessor motherboard, and the chip IC1B provides the power voltage of the current sampling integrated circuit. The J1B socket is a power connection interface of a power supply main board and a microprocessor main board, and the power supply main board provides various required power supplies of the microprocessor main board through the J1B. J2B is a socket J30-15TJ of the switch matrix control circuit, and provides power supply and 8 paths of control signals.
In fig. 10, a main control MCU of the microprocessor motherboard is connected to a computer through a U9C serial port chip for communication. The main control MCU performs various function operations and tests by receiving instructions issued by the computer. In the figure, a chip U1C, a chip U4C, a chip U5C, a chip U7C and a chip U8C are driving chips of an output port of a master control M CU, and mainly enhance the driving capability of output current. The chip U2C and the chip U6C are 8 paths of 28V and 57V current sampling AD chips respectively, and the chip U10 is a reference voltage stabilizing chip of the AD sampling chip. In fig. 4, D2C to D9C are normal test indicator lamps of the tested piece, and the indicator lamps are turned on to indicate that the current power amplifier is performing electric aging, and vice versa. D36C-D43C are test fault indicator lamps of the tested piece, and the indicator lamps are lighted to indicate that the tested piece of the current time has faults. The 16 indicator lights on the panel are controlled by the main control MCU to be turned on and off.
In fig. 11, the switching tube Q1D, the switching tube Q2D, the switching tube Q6D, the switching tube Q10D, the switching tube Q11D, the switching tube Q12D, the switching tube Q19D, and the switching tube Q22D are 8-path 57V switching tubes, and the optocouplers Q7D, Q8D, Q9D, Q16D, Q17D, Q18D, Q21D, and Q24D are isolation optocouplers to isolate the 8-path switching control signals from the 57V reference ground. The optocouplers Q4D, Q5D, Q6D, Q13D, Q14D, Q15D, Q20D and Q23D are feedback devices for 57V on-off detection. When the control device works, a master control M CU provides control signals 57 V_EN1-57 V_EN8, when any path of the control signals is at a high level, corresponding optocouplers Q7D, Q8D, Q9D, Q16D, Q17D, Q18D, Q21D and Q24D are conducted, corresponding limit diodes D1D-D8D are conducted, corresponding middle switching tubes Q1D, Q2D, Q6D, Q10D, Q11D, Q12D, Q19D and Q22D are limited to-10V after the limit diodes are conducted, and 57V power supply voltage is obtained by corresponding 57V switching tubes conducted at the moment. When the 1-path switch is opened, the corresponding optocouplers Q4D, Q5D, Q6D, Q13D, Q14D, Q15D, Q20D and Q23D are isolated and are conducted, when the 1-path switch is turned on, the resistor R10D and the resistor R16D are connected in series and divided to obtain 2.5V feedback signals, and other paths are the same, and are 57 V_CK1-57 V_CK8 respectively, and the signals are fed back to the main control MCU, so that whether a certain path of tested piece is started or not is judged. The sensors U1D to U8D are Hall current sensors, which correspond to 8 paths of 57V current samples respectively, the 1 st pin and the 2 nd pin are input pins, the 3 rd pin and the 4 th pin are output pins, the 7 th pin is a current sampling output pin, and voltage signals 57V_I1 to 57V_I8 of the current samples are sent to a 12-bit AD chip (U6C in fig. 4) for current sampling.
In fig. 12, IC 1E-IC 8E are 8-way-28V switching transistors, and optocouplers Q4E, Q5E, Q6E, Q10E, Q11E, Q12E, Q15E, and Q16E are isolation optocouplers, which isolate 8-way switching control signals-28v_en1-28v_en8 from 28V reference ground. The optocouplers Q1E, Q2E, Q3E, Q7E, Q8E, Q9E, Q13E and Q14E are isolated optocouplers, and are feedback devices for 28V on-off detection. When the device works, a main control MCU provides control signals-28V_EN1 to-28V_EN8, when any one of the control signals is at a high level, the corresponding IC1E to IC8E is conducted, the corresponding limiting diode D1E to diode D8E is conducted, the gate source voltage of the corresponding IC1E to I C E is limited to-10V after the diode is conducted, at the moment, the corresponding-28V switching tube is conducted, and the tested piece obtains the-28V power source voltage. When the 1-way switch is opened, the corresponding optocouplers Q1E, Q2E, Q3E, Q7E, Q8E, Q9E, Q13E and Q14E are isolated and are conducted, when the 1-way switch is turned on, the resistor R7E and the resistor R11E are connected in series and divided to obtain 2.5V feedback signals, and other ways are similar, the feedback detection voltages are-28V_CK1 to-28V_CK8 respectively, and the signals are fed back to the master control MCU, so that whether a certain way of measured piece is started to a-28V power supply is judged. The sensors U1E, U2E and U4E-U9E are Hall current sensors, corresponding to 8 paths of-28V current samples, the 1 st pin and the 2 nd pin are input pins, the 3 rd pin and the 4 th pin are output pins, the 7 th pin is a current sample output pin, and voltage signals-28V_I1 to-28V_I8 of the current samples are sent into a 12-bit AD chip (U2C in fig. 4) for current sampling.
Claims (5)
1. The full-automatic unmanned aging test and life test system of the microwave solid-state power amplifier is characterized by comprising an aging test and life test control box and a computer; the computer is connected with a burn-in test and life test control box which is connected with a microwave solid-state power amplifier; the aging test and life test control box comprises a control box shell, a power supply main board, a microprocessor main board, a frequency source, a radio frequency amplifier and a switch matrix, wherein the power supply main board, the microprocessor main board, the frequency source, the radio frequency amplifier and the switch matrix are arranged in the shell; the control box shell comprises a control box panel and a control box backboard; the control box panel is connected with the power supply main board, the power supply main board is also connected with the frequency source, the control box back plate and the microprocessor main board, the microprocessor main board is also connected with the control box panel, the control box back plate, the frequency source, the radio frequency amplifier and the switch matrix, and the frequency source is also connected with the radio frequency amplifier and the switch matrix; the power supply main board and the radio frequency amplifier and the switch matrix are respectively connected with the microwave solid-state power amplifier;
the radio frequency amplifier and the switch matrix comprise a radio frequency switch matrix circuit and a radio frequency switch matrix control circuit; the radio frequency switch matrix circuit includes: the attenuator is connected with the frequency source, and control signals of the switch chip are provided by the microprocessor main board; the radio frequency switch matrix control circuit comprises: an adjustable linear voltage-stabilizing integrated circuit, a modulator, a linear adjustable voltage stabilizer and a switch chip driving integrated circuit; the adjustable linear voltage stabilizing integrated circuit is used for supplying a stable power supply to the modulator, the modulator is used for realizing drain electrode modulation on the amplifier chip, the modulator is connected with the microprocessor main board, the linear adjustable voltage stabilizer is used for supplying a voltage stabilizing power supply to the switch chip driving integrated circuit, and the switch chip driving integrated circuit is connected with the switch chip;
the microprocessor motherboard includes: singlechip S chip TM32F103ZE chip T6; the single chip microcomputer peripheral circuit comprises a socket J1B and a socket J2B, wherein the socket J1B is used for connecting the power supply main board and the microprocessor main board, and the socket J2B is used for connecting the radio frequency switch matrix control circuit and the microprocessor main board; the power supply voltage stabilizing circuit comprises a main board power supply voltage stabilizing part and a current sampling integrated circuit voltage stabilizing part; the singlechip driving circuit comprises a plurality of driving chips, and the driving chips are connected and communicated with a computer; the AD sampling and indicator lamp circuit is connected with the singlechip and comprises a sampling AD chip for adopting-28V and 57V currents, a reference voltage stabilizing chip for stabilizing the voltage of the sampling AD chip and an indicator lamp for carrying out normal indication or fault test on the microwave solid-state power amplifier; the 8-path 57V power supply switch control and current sampling circuit comprises an 8-path 57V switching tube, an isolation optocoupler for isolating the 8-path 57V switching tube from a reference ground, a feedback isolation optocoupler for detecting the on-off of the 57V switching tube and a Hall current sensor for adopting the current of the 8-path 57V switching tube; the 8-28V power supply switch control and current sampling circuit comprises an 8-28V switching tube, an isolation optocoupler for isolating the 8-28V switching tube from a reference ground, a feedback isolation optocoupler for detecting the on-off of the-28V switching tube and a Hall current sensor for adopting the current of the 8-28V switching tube.
2. The full-automatic unmanned aging test and life test system of the microwave solid-state power amplifier according to claim 1, wherein the control box panel is provided with a +57V ammeter, -28.5V ammeter, a tested power amplifier normal indicator lamp, a tested power amplifier fault indicator lamp, an alternating current switch and a hardware reset tact switch; the control box backboard is provided with a-28.5V power supply and signal socket, a +57V power supply output socket, a +57V power supply input socket, a serial port communication interface, an AC220V power supply socket, a program downloading port, a radio frequency amplification and switch matrix output interface and a shell grounding column.
3. The fully automated unmanned burn-in and life test system of a microwave solid state power amplifier of claim 2, further comprising a temperature sensor coupled to the burn-in and life test control box.
4. The full-automatic unmanned aging test and life test system of the microwave solid-state power amplifier according to claim 3, wherein the control box back plate is provided with a temperature sensor socket, the temperature sensor is connected with the microprocessor through the temperature sensor socket, and the temperature sensor is used for sampling the environmental temperature where the microwave solid-state power amplifier is located.
5. The fully automatic unmanned burn-in and life test system of a microwave solid state power amplifier of claim 1, wherein the power motherboard comprises: the AC/D C conversion power supply module is used for converting commercial power into a direct-current stabilized power supply; the isolation DC/DC power supply module is used for converting a direct-current stabilized power supply into a required-28.5V and +57V power supply; and the +/-12V power supply module is used for supplying power to the micro-processing main board, the frequency source, the radio frequency amplifier and the switch matrix.
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| CN111579967B (en) * | 2020-05-29 | 2020-12-25 | 成都思科瑞微电子股份有限公司 | Dynamic aging test device for radio frequency power amplification module |
| CN113092976B (en) * | 2021-03-17 | 2024-06-25 | 浙江铖昌科技股份有限公司 | System and method for testing radio frequency microwave high-power device |
| CN117214593A (en) * | 2023-11-09 | 2023-12-12 | 苏州摩尔镓芯半导体科技有限公司 | Aging test device and energy recovery system |
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